TWI576931B - Method for manufacturing electronic component package - Google Patents
Method for manufacturing electronic component package Download PDFInfo
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- TWI576931B TWI576931B TW104113508A TW104113508A TWI576931B TW I576931 B TWI576931 B TW I576931B TW 104113508 A TW104113508 A TW 104113508A TW 104113508 A TW104113508 A TW 104113508A TW I576931 B TWI576931 B TW I576931B
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Description
本發明係關於一種以樹脂密封半導體晶片等電子零件之封裝體製造方法,尤其是關於一種電磁性遮蔽封裝體內之晶片的屏蔽(shield)用溝槽之形成方法、以及在PoP(Package on Package;堆疊)技術中用於電氣連接上下之封裝體之通孔用孔之形成方法。 The present invention relates to a method of manufacturing a package for sealing an electronic component such as a semiconductor wafer with a resin, and more particularly to a method for forming a shield for a shield of a wafer in an electromagnetic shielding package, and a PoP (Package on Package; A method of forming a via hole for electrically connecting upper and lower packages in a stacking technique.
在水平方向(面方向)配置半導體晶片等電子零件並以樹脂密封之封裝體中,為了防止相接近之零件產生干擾,而必須電磁性遮蔽(屏蔽)封裝體內之零件。 In a package in which an electronic component such as a semiconductor wafer is placed in a horizontal direction (surface direction) and sealed with a resin, in order to prevent interference of components close to each other, it is necessary to electromagnetically shield (shield) the components in the package.
關於在封裝體內之進行電磁遮蔽的情形之一般的構成例,參照圖1進行說明。另外,在以下本說明書中所參照之各圖式,為了簡略化說明而將各部之尺寸比例適當地變更,其並非為正確地表示了實際製品之形狀。圖1(a)係半導體封裝體1之剖面圖,圖1(b)係圖1(a)所示之半導體封裝體1之上面圖(俯視圖)。圖1(a)係圖1(b)之A-A’線剖面圖。在半導體封裝體1之製造步驟中,首先,將半導體晶片20所具備之電極端子21,透過凸塊(bump)22而與基板10上之配線11連接,對該等以由熱硬化性之樹脂材料(例如環氧樹脂(epoxy))構成之樹脂層30進行密封。接著,在樹脂層30之 表面301(上面)形成既定圖案之溝槽31並使基板10上之接地電極12露出。然後,在已形成之溝槽31埋入屏蔽材32、施以塗膜等。藉由以上之步驟,能夠遮蔽半導體封裝體1內之零件間之電磁性干擾。 A general configuration example of the case where electromagnetic shielding is performed in the package will be described with reference to Fig. 1 . In addition, in each of the drawings referred to in the following description, the size ratio of each part is appropriately changed for the sake of simplicity, and the shape of the actual product is not accurately indicated. 1(a) is a cross-sectional view of the semiconductor package 1, and FIG. 1(b) is a top view (top view) of the semiconductor package 1 shown in FIG. 1(a). Fig. 1(a) is a cross-sectional view taken along line A-A' of Fig. 1(b). In the manufacturing process of the semiconductor package 1, first, the electrode terminal 21 provided in the semiconductor wafer 20 is connected to the wiring 11 on the substrate 10 through a bump 22, and is made of a thermosetting resin. A resin layer 30 composed of a material such as epoxy is sealed. Next, in the resin layer 30 The surface 301 (upper surface) forms a groove 31 of a predetermined pattern and exposes the ground electrode 12 on the substrate 10. Then, the shield member 32 is embedded in the formed groove 31, and a coating film or the like is applied. By the above steps, electromagnetic interference between the components in the semiconductor package 1 can be shielded.
此外,隨著電子機器之小型化,對半導體封裝體之高密度化的需求大增,作為因應如此之需求的技術,提供有利用PoP型之晶片積層構造的TMV(Through Mold Via;樹脂成型晶圓穿孔導通)法之製品。 In addition, with the miniaturization of the electronic device, the demand for the high density of the semiconductor package is greatly increased. As a technique for responding to such a demand, a TMV (Through Mold Via) using a PoP type wafer laminate structure is provided. Round perforated conduction method.
參照圖2,對TMV法之PoP型之晶片積層構造之一例進行說明。圖2(a)表示PoP中的下側封裝體1a及上側封裝體1b,圖2(b)表示將兩者積層連接之狀態。針對配設在上側封裝體1b上之電子零件等適當地省略圖示,對於具有與圖1相同或類似功能之構件,在相同符號之尾末附加既定之字符而加以區分。關於半導體晶片20a或各種配線等之樹脂密封步驟係與圖1所示之例相同。在圖2(a)中,在下側封裝體1a,取代溝槽31而形成有到達基板10a上之上下連接電極13a的孔31a(例如圓形之開口部)。在上側封裝體1b,在設置於背面(該圖中下側之面)的上下連接電極13b上鑲有(mounting)銲珠33。接著,以將上下連接電極13b上之銲珠33嵌入於孔31a之方式,將上側封裝體1b載置於下側封裝體1a上。若確認上下之封裝體1b、1a之位置關係是適切的,則藉由回銲(reflow)加熱將銲珠33溶融而填滿孔31a內,成為連接上下之封裝體1b、1a之上下連接電極13b、13a的連接通孔34。另外,亦可取代上下連接電極13b上之銲珠33,而在孔31a內填充導電性材料。 An example of a PoP type wafer laminate structure of the TMV method will be described with reference to Fig. 2 . Fig. 2(a) shows the lower package 1a and the upper package 1b in the PoP, and Fig. 2(b) shows a state in which the two are laminated. The electronic components and the like disposed on the upper package 1b are appropriately omitted, and members having the same or similar functions as those of FIG. 1 are distinguished by adding predetermined characters to the end of the same symbol. The resin sealing step for the semiconductor wafer 20a or various wirings and the like is the same as the example shown in FIG. In FIG. 2(a), in the lower package 1a, a hole 31a (for example, a circular opening) that reaches the upper and lower connection electrodes 13a on the substrate 10a is formed instead of the groove 31. In the upper package 1b, the bead 33 is mounted on the upper and lower connection electrodes 13b provided on the back surface (the lower surface in the drawing). Next, the upper package 1b is placed on the lower package 1a so that the beads 33 on the upper and lower connection electrodes 13b are fitted in the holes 31a. When it is confirmed that the positional relationship between the upper and lower packages 1b and 1a is appropriate, the bead 33 is melted by reflow heating to fill the hole 31a, and the lower connection electrode is connected to the upper and lower packages 1b and 1a. The connection holes 34 of 13b, 13a. Further, instead of the bead 33 on the upper and lower connection electrodes 13b, a conductive material may be filled in the hole 31a.
專利文獻1:日本特開2009-26805號公報 Patent Document 1: Japanese Laid-Open Patent Publication No. 2009-26805
在上述之例中,屏蔽用溝槽或通孔用孔的形成,習知以往一般是藉由雷射加工進行。該加工手法係藉由雷射照射使樹脂材料溶融而進行,由於未伴隨切削器具磨耗等之劣化因此廣泛被採用。 In the above examples, the formation of the shielding trench or the via hole is conventionally performed by laser processing. This processing method is carried out by melting the resin material by laser irradiation, and is widely used because it is not deteriorated by abrasion of the cutting tool or the like.
然而,雷射加工容易受封裝體之厚度偏差或彎曲等之影響,例如若封裝體之厚度小於假定值,則存在有雷射強度過大而切斷配線、傷及基板等不佳情況產生,因此存在有必須進行精密的控制而使加工變複雜等的問題。 However, the laser processing is easily affected by the thickness deviation or the bending of the package. For example, if the thickness of the package is smaller than the assumed value, there is a case where the laser intensity is too large, and the wiring is cut, the substrate is damaged, and the like. There is a problem that it is necessary to perform precise control to complicate processing.
作為避免如此之問題的方法之一,在專利文獻1中,記載有以下內容:在基板框架與成型模具間的密閉空間填充密封樹脂的被覆方法中,藉由將壓接於基板框架上之配線的柱狀突起設於模具,形成通孔用之貫通孔。 In one of the methods for avoiding such a problem, Patent Document 1 describes a method of coating a sealing resin in a sealed space between a substrate frame and a molding die by crimping the wiring on the substrate frame. The columnar protrusions are provided in the mold to form through holes for the through holes.
然而,在專利文獻1記載的方法中,恐有在柱狀突起之前端與配線之間存在有微小間隙的情形時而未形成貫通孔、為了避免此情況而強壓接導致在配線留下傷痕等情況。 However, in the method described in Patent Document 1, when there is a slight gap between the front end of the columnar projection and the wiring, the through hole is not formed, and in order to avoid this, the crimping is caused by the strong pressure bonding. Happening.
為了正確地形成溝槽或孔之深度,雖說在目前最佳為研磨(milling)加工,但必須頻繁地更換已磨耗之切削器具。 In order to correctly form the depth of the groove or the hole, although it is currently best to perform the milling process, the worn cutting tool must be frequently replaced.
本發明係有鑑於上述之情況而完成,其目的在於:在電子零件封裝體之製造步驟中,在不使基板或該基板上之配線破損之下,於密封樹脂上形成屏蔽用溝槽或通孔用孔。 The present invention has been made in view of the above circumstances, and an object thereof is to form a shield trench or a pass on a sealing resin without causing damage to a wiring on a substrate or the substrate in a manufacturing step of the electronic component package. Hole for hole.
為了解決上述課題所完成之本發明之電子零件封裝體之製造方法,係在密封已配設在基板上之電子零件及電極墊的密封樹脂之表面上,形成到達該電極墊之溝槽或孔的方法,其特徵在於,包含: (a)在該密封樹脂之表面上的供形成該溝槽或孔之位置,藉由模具成形而形成未到達該電極墊的預備溝槽或預備孔的第1步驟;以及(b)藉由使在該第1步驟中形成的預備溝槽或預備孔之深度增大之加工而使該電極墊露出的第2步驟。 In order to solve the above problems, the method for manufacturing an electronic component package of the present invention is to form a trench or a hole reaching the electrode pad on a surface of a sealing resin that seals an electronic component and an electrode pad that are disposed on a substrate. Method, characterized in that it comprises: (a) a first step of forming a groove or a hole on the surface of the sealing resin to form a preliminary groove or a preliminary hole which does not reach the electrode pad by molding; and (b) The second step of exposing the electrode pad by processing the depth of the preliminary trench or the preliminary hole formed in the first step.
在本發明之電子零件封裝體之製造方法中,在密封電子零件與電極墊的密封樹脂之表面上的使電極墊露出之溝槽或孔之形成位置,藉由模具成形而形成有未到達該電極墊之程度之深度的預備溝槽或預備孔(第1步驟)。然後,藉由使該預備溝槽或預備孔之深度增大之加工而使該電極墊露出,藉此以該預備溝槽或預備孔作為屏蔽用溝槽或通孔用孔(第2步驟)。在第2步驟中,例如可藉由研磨加工或雷射加工,使該預備溝槽或預備孔之深度增大。 In the method of manufacturing an electronic component package of the present invention, a position at which a groove or a hole for exposing an electrode pad on a surface of a sealing resin for sealing an electronic component and an electrode pad is formed by molding of the mold A preliminary groove or a preliminary hole having a depth to the extent of the electrode pad (first step). Then, the electrode pad is exposed by processing the depth of the preliminary trench or the preliminary hole, whereby the preliminary trench or the preliminary hole is used as a shield trench or a via hole (second step) . In the second step, the depth of the preliminary trench or the preliminary hole can be increased, for example, by grinding or laser processing.
此處,上述所謂的「密封樹脂之表面」,意指在各個電子零件封裝體中、與基板相接之面相反側之密封樹脂之面(圖1及圖2所示之例中以301、301a及301b之符號圖示)。此外,在上述「電極墊」包含接地電極、及電子零件具備之端子以及與其連接之配線電極等。另外,上述「密封樹脂」,可高比率地包含防止因樹脂收縮產生之封裝體彎曲的填料(例如SiO2等粒子),是該領域中所周知的。 Here, the term "surface of the sealing resin" means the surface of the sealing resin on the side opposite to the surface in contact with the substrate in each electronic component package (in the example shown in FIGS. 1 and 2, 301, Symbols of 301a and 301b). Further, the above-mentioned "electrode pad" includes a ground electrode, a terminal provided in the electronic component, and a wiring electrode connected thereto. Further, the above-mentioned "sealing resin" can contain a filler (for example, particles such as SiO 2 ) which prevents bending of the package due to shrinkage of the resin in a high ratio, and is well known in the art.
根據上述之構成,在到達基板上之電極墊的溝槽或孔之形成中,由於無需使在第1步驟中形成之預備溝槽或預備孔到達電極墊,因此並不會有如專利文獻1般因模具壓迫電極墊而賦予傷痕的情況。進一步地,藉由預先在第1步驟中利用模具成形完成加工至中途,而能夠在利用研磨加工進行第2步驟的情形時,抑制切削器具之耗損。此外,在以雷射加工 進行第2步驟的情形時,由於能夠依據預備溝槽或預備孔之深度而抑制照射雷射之強度,因此基板或配線破損之不佳情況難以產生。因此,能夠在不使基板或該基板上之配線破損之下,在密封樹脂上形成屏蔽用溝槽或通孔用孔。 According to the above configuration, in the formation of the trench or the hole reaching the electrode pad on the substrate, since the preliminary trench or the preliminary hole formed in the first step does not need to reach the electrode pad, there is no such thing as in Patent Document 1. The case where the mold is pressed against the electrode pad to give a flaw. Further, by performing the processing in the first step in the first step to complete the processing in the middle, it is possible to suppress the wear of the cutting tool when the second step is performed by the polishing process. In addition, in laser processing In the case of performing the second step, since the intensity of the irradiation laser can be suppressed depending on the depth of the preliminary groove or the preliminary hole, it is difficult to cause damage to the substrate or the wiring. Therefore, it is possible to form a shield trench or a via hole on the sealing resin without damaging the wiring on the substrate or the substrate.
該第1步驟,較佳為包含以下步驟:使用一模具、與在腔室底部具備有具有低於該溝槽或孔之深度的高度之突起銷的另一模具,使從背面側保持該基板之該一模具與該另一模具抵接且緊固模具,並在該腔室中填充樹脂材料。藉此,能夠簡易地形成預備溝槽或預備孔。 The first step preferably includes the step of holding the substrate from the back side by using a mold and another mold having a protruding pin having a height lower than the depth of the groove or the hole at the bottom of the chamber. The mold abuts the other mold and fastens the mold, and the chamber is filled with a resin material. Thereby, the preliminary groove or the preliminary hole can be formed easily.
上述所謂的「一模具」及「另一模具」,例如係上模(或下模)及下模(或上模),其各個是否相對應,並非為變更本發明之趣旨。例如,在上述「另一模具」為上模的情形,上述「底部」成為在垂直線中位於上方,本發明中所謂的底部之用語並非與下部同義。 The above-mentioned "one mold" and "another mold" are, for example, an upper mold (or a lower mold) and a lower mold (or an upper mold), and their respective correspondences are not intended to change the scope of the present invention. For example, in the case where the "other mold" is the upper mold, the "bottom" is located above the vertical line, and the term "bottom" in the present invention is not synonymous with the lower portion.
另外,在上述「底部」,亦包含與腔室之底面同一水平面之頂出銷(ejector pin)等之頭部頂面。關於該「底部」、「頭部」及「頂面」之用語亦與上述同樣地,並非以垂直線中的上下來定義。 Further, the "bottom" of the above-mentioned "bottom" also includes a top surface of the head such as an ejector pin which is flush with the bottom surface of the chamber. The terms "bottom", "head" and "top" are also defined in the vertical line as in the above.
在上述第1步驟中,亦可藉由設置在可從該腔室之底面突出之頂出銷之頭部頂面的該突起銷而形成該預備溝槽或預備孔。藉此,使從腔室取出電子零件封裝體變容易。 In the above first step, the preliminary groove or the preliminary hole may be formed by the projecting pin provided on the top surface of the head of the ejector pin projecting from the bottom surface of the chamber. Thereby, it is easy to take out the electronic component package from the chamber.
根據本發明之電子零件封裝體之製造方法,能夠在不使基板或該基板上之配線破損之下,在密封樹脂上形成屏蔽用溝槽或通孔用孔。 According to the method of manufacturing an electronic component package of the present invention, it is possible to form a shield trench or a via hole on the sealing resin without damaging the wiring on the substrate or the substrate.
1、1a、1b‧‧‧半導體封裝體 1, 1a, 1b‧‧‧ semiconductor package
10、10a、10b‧‧‧基板 10, 10a, 10b‧‧‧ substrate
11、11a、11b‧‧‧配線 11, 11a, 11b‧‧‧ wiring
12‧‧‧接地電極 12‧‧‧Ground electrode
13a、13b‧‧‧上下連接電極 13a, 13b‧‧‧ upper and lower connecting electrodes
20、20a‧‧‧半導體晶片 20, 20a‧‧‧ semiconductor wafer
21、21a‧‧‧電極端子 21, 21a‧‧‧ electrode terminals
22、22a‧‧‧凸塊 22, 22a‧‧‧Bumps
30、30a、30b‧‧‧樹脂層 30, 30a, 30b‧‧‧ resin layer
31‧‧‧溝槽 31‧‧‧ trench
31a‧‧‧孔 31a‧‧‧ hole
32‧‧‧屏蔽材 32‧‧‧Shielding materials
33‧‧‧銲珠 33‧‧‧ welding beads
34‧‧‧連接通孔 34‧‧‧Connecting through holes
301、301a、301b‧‧‧樹脂層之表面 301, 301a, 301b‧‧‧ surface of the resin layer
40、40b、40c、40d、40e‧‧‧上模 40, 40b, 40c, 40d, 40e‧‧‧
41、41b、41d、51b‧‧‧保持部 41, 41b, 41d, 51b‧‧‧ Keeping Department
50、50b、50d、500、500a‧‧‧下模 50, 50b, 50d, 500, 500a‧‧‧
51、41b、41d‧‧‧腔室 51, 41b, 41d‧‧‧ chamber
52、42b、42d‧‧‧側閘口 52, 42b, 42d‧‧‧ side gate
53、43b、53c、43d、53e‧‧‧突起銷 53, 43b, 53c, 43d, 53e‧‧‧
54、54a、44b、44d‧‧‧頂出銷 54, 54a, 44b, 44d‧‧‧ top sales
55、55a、45b、45d‧‧‧頭部 55, 55a, 45b, 45d‧‧‧ head
56、46b、56c、46d、56e‧‧‧魚眼坑部 56, 46b, 56c, 46d, 56e‧‧‧ fish eye pit
57、47b、57c、47d、57e‧‧‧貫通孔 57, 47b, 57c, 47d, 57e‧‧‧ through holes
58、58a‧‧‧凸緣部 58, 58a‧‧‧Flange
501、501a‧‧‧腔室側面構件 501, 501a‧‧‧ chamber side members
502、502a‧‧‧腔室底面構件 502, 502a‧‧‧ chamber bottom member
503、503a‧‧‧基座板 503, 503a‧‧‧ base plate
504、504a、505、505a‧‧‧彈性構件 504, 504a, 505, 505a‧‧‧ elastic members
61、61b、61c‧‧‧基板 61, 61b, 61c‧‧‧ substrates
61d、61e‧‧‧單片基板 61d, 61e‧‧‧ single substrate
62、62b、62c、62d、62e‧‧‧半導體晶片 62, 62b, 62c, 62d, 62e‧‧‧ semiconductor wafer
63、63b、63c、63d、63e‧‧‧上下連接電極 63, 63b, 63c, 63d, 63e‧‧‧ upper and lower connecting electrodes
64、64b、64c、64d、64e‧‧‧樹脂材料 64, 64b, 64c, 64d, 64e‧‧‧ resin materials
65、65b、65c、65d、65e‧‧‧樹脂層 65, 65b, 65c, 65d, 65e‧‧‧ resin layer
66、66b、66d‧‧‧閘口部 66, 66b, 66d‧‧‧ Gates
67‧‧‧預備孔 67‧‧‧Preparation hole
68、68b、68c、68d、68e‧‧‧孔 68, 68b, 68c, 68d, 68e‧ ‧ holes
651、651b、651c、651d、651e‧‧‧樹脂層之表面 Surface of 651, 651b, 651c, 651d, 651e‧‧‧ resin layer
652‧‧‧殘留樹脂層 652‧‧‧Residual resin layer
700、700a‧‧‧脫模膜 700, 700a‧‧‧ release film
800‧‧‧貫通孔 800‧‧‧through holes
801‧‧‧金屬框架 801‧‧‧Metal frame
802‧‧‧黏著片 802‧‧‧Adhesive film
圖1,係形成有一般的屏蔽用溝槽之半導體封裝體之構造例的剖面圖(a)及俯視圖(b)。 Fig. 1 is a cross-sectional view (a) and a plan view (b) showing a structural example of a semiconductor package in which a general trench for shielding is formed.
圖2,係在TMV法之PoP型之晶片積層構造之一例中,在下側封裝體鑲有銲珠之狀態的剖面圖(a)及在下側封裝體積層連接有上側封裝體之狀態的剖面圖(b)。 2 is a cross-sectional view (a) in a state in which a lower package is inlaid with solder beads, and a cross-sectional view in a state in which an upper package is connected to a lower package volume layer, in an example of a PoP type wafer laminated structure of the TMV method. (b).
圖3,係本發明之一實施形態之電子零件封裝體之製造方法的第1步驟之第1階段(a)、第2階段(b)、第3階段(c)及第4階段(d)。 3 is a first stage (a), a second stage (b), a third stage (c), and a fourth stage (d) of the first step of the method of manufacturing the electronic component package according to the embodiment of the present invention. .
圖4,係同一實施形態中的具備有突起銷之頂出銷的立體圖(a)及其變形例(b)。 Fig. 4 is a perspective view (a) and a modification (b) of the ejector pin provided with the projection pin in the same embodiment.
圖5,係在同一實施形態中形成之預備孔的剖面圖(a)及藉由加工使該預備孔之深度增大所形成之孔的剖面圖(b)。 Fig. 5 is a cross-sectional view (a) of a preliminary hole formed in the same embodiment, and a cross-sectional view (b) of a hole formed by increasing the depth of the preliminary hole by machining.
圖6,係電子零件封裝體之製造方法的另一例中的第1階段(a)、第2階段(b)、第3階段(c)及第4階段(d)。 Fig. 6 shows a first stage (a), a second stage (b), a third stage (c), and a fourth stage (d) in another example of the method of manufacturing the electronic component package.
圖7,係電子零件封裝體之製造方法的再另一例中的第1階段(a)、第2階段(b)及第3階段(c)。 Fig. 7 is a first stage (a), a second stage (b), and a third stage (c) in still another example of the method of manufacturing the electronic component package.
圖8,係在中空區域配置有複數個單片基板之狀態的金屬板及黏著片之俯視圖(a)及剖面圖(b)。 Fig. 8 is a plan view (a) and a cross-sectional view (b) of a metal plate and an adhesive sheet in a state in which a plurality of single-piece substrates are arranged in a hollow region.
圖9,係密封複數個單片基板之電子零件封裝體之製造方法之一例中的第1階段(a)、第2階段(b)、第3階段(c)及第4階段(d)。 Fig. 9 is a first stage (a), a second stage (b), a third stage (c), and a fourth stage (d) in an example of a method of manufacturing an electronic component package in which a plurality of single-piece substrates are sealed.
圖10,係密封複數個單片基板之電子零件封裝體之製造方法之再另一例中的第1階段(a)、第2階段(b)及第3階段(c)。 Fig. 10 is a first stage (a), a second stage (b), and a third stage (c) in still another example of a method of manufacturing an electronic component package in which a plurality of single-piece substrates are sealed.
以下,針對本發明之一實施形態之電子零件封裝體之製造方法,參照圖3~圖5進行說明。在以下之記載中,對於具有與較先說明的圖式相同或類似功能之構件,在相同或類似符號之尾末適當地附加既定之字符而加以區分,並省略其說明。另外,在本實施形態中雖針對TMV法之PoP型之晶片積層構造中採用之通孔用孔之形成方法進行說明,但如下述般,關於屏蔽用溝槽之形成亦可適用類似的方法。 Hereinafter, a method of manufacturing an electronic component package according to an embodiment of the present invention will be described with reference to FIGS. 3 to 5. In the following description, members having the same or similar functions as those of the above-described drawings are denoted by appropriately adding predetermined characters at the end of the same or similar symbols, and the description thereof will be omitted. In the present embodiment, a method of forming the via hole used in the PoP type wafer laminated structure of the TMV method will be described. However, a similar method can be applied to the formation of the trench for shielding as described below.
在圖3中,表示用於說明本發明之第1步驟的各階段之剖面圖。另外,關於用於將半導體晶片62鑲於基板61上之電極端子、配線及凸塊則省略圖示。 In Fig. 3, there is shown a cross-sectional view for explaining each stage of the first step of the present invention. In addition, illustration of the electrode terminal, the wiring, and the bump for mounting the semiconductor wafer 62 on the substrate 61 is omitted.
首先,如圖3(a)所示般,預先對具備有可保持在已使基板61上下反轉之狀態(亦即,鑲於基板61上之半導體晶片62與上下連接電極63成為下面側的狀態)的保持部41的上模40、及具備有腔室51之下模50加熱至既定的(樹脂材料64之熔點以上之)溫度(亦在下述之各例中進行模具之事前加熱)。接著,使下模50相對於已固定之上模40上升(圖中的黑粗箭頭方向),且如圖3(b)般抵接,並緊固模具。然後,從設於下模50之側閘口(side gate)52將樹脂材料64填充於腔室51。另外,亦可利用用於防止脫模時樹脂材料64附著於下模50的脫模膜被覆腔室51,但省略圖示。 First, as shown in FIG. 3(a), a state in which the substrate 61 can be held upside down is reversed (that is, the semiconductor wafer 62 and the upper and lower connection electrodes 63 mounted on the substrate 61 are placed on the lower surface side). The upper mold 40 of the holding portion 41 of the state) and the lower mold 50 having the chamber 51 are heated to a predetermined temperature (above the melting point of the resin material 64) (the pre-heating of the mold is also performed in each of the following examples). Next, the lower mold 50 is raised with respect to the fixed upper mold 40 (in the direction of the black thick arrow in the drawing), and is abutted as shown in Fig. 3(b), and the mold is fastened. Then, the resin material 64 is filled in the chamber 51 from the side gate 52 provided on the lower mold 50. Further, the chamber 51 may be covered by a release film for preventing the resin material 64 from adhering to the lower mold 50 during demolding, but the illustration is omitted.
在腔室51之底部,在與基板61上之上下連接電極63對向的位置,設置複數個具有既定高度之突起銷53。上述既定高度,因腔室51之深度或上下連接電極63之厚度等而有所不同,但如圖3(b)所示般較佳為設成在已使上下之模具40、50抵接且緊固模具時,相對於相對向之上下連接電極63形成例如100~300μm之間隙程度的高度。 At the bottom of the chamber 51, a plurality of projecting pins 53 having a predetermined height are provided at positions opposing the upper and lower connecting electrodes 63 on the substrate 61. The predetermined height differs depending on the depth of the chamber 51 or the thickness of the upper and lower connection electrodes 63. However, as shown in FIG. 3(b), it is preferable that the upper and lower molds 40 and 50 are brought into contact with each other. When the mold is fastened, a height of, for example, a gap of 100 to 300 μm is formed with respect to the upper and lower connection electrodes 63.
此外,在腔室51之底部設置具有魚眼坑(spot face)部56的貫通孔57,而在第1步驟之前,從圖中上方向將頂出銷54插通於貫通孔57,將頂出銷54之頭部55收容於魚眼坑部56。魚眼坑部56之深度或頭部55之高度、及該等之形狀,較佳為:以在已將頭部55收容於魚眼坑部56時,頭部55之上面與腔室51之底面成為同一水平面之方式而適當地決定。在經過樹脂材料64硬化所需之既定時間後,如圖3(c)般,在維持使基板61保持在上模40之保持部41的狀態下使下模50下降(圖中的白粗箭頭方向)並且對頂出銷54施加圖中的黑細箭頭方向之力以進行開模。一旦從該狀態進一步使下模50下降,則將在樹脂層65(相當於本發明之密封樹脂)之表面651、在上下連接電極63之緊鄰上方(圖3中為下側)形成有預備孔67之封裝構造體,在藉由保持部41保持的狀態下取出(圖3(d))。關於從側閘口52脫模之閘口部66可以任意步驟去除。 Further, a through hole 57 having a fish face portion 56 is provided at the bottom of the chamber 51, and before the first step, the ejector pin 54 is inserted into the through hole 57 from the upper direction in the drawing, and the top is pushed. The head 55 of the delivery pin 54 is housed in the fisheye pit portion 56. The depth of the fisheye sump 56 or the height of the head 55, and the shape thereof, is preferably such that the upper surface of the head portion 55 and the chamber 51 are placed when the head portion 55 has been received in the fish eye sump portion 56. The bottom surface is formed in the same horizontal plane and is appropriately determined. After a predetermined period of time required for the resin material 64 to harden, as shown in FIG. 3(c), the lower mold 50 is lowered while maintaining the substrate 61 held in the holding portion 41 of the upper mold 40 (the white thick arrow in the drawing) The direction) is applied to the ejector pin 54 by applying a force in the direction of the black thin arrow in the drawing to perform mold opening. When the lower mold 50 is further lowered from this state, a preliminary hole is formed on the surface 651 of the resin layer 65 (corresponding to the sealing resin of the present invention) and immediately above the upper and lower connection electrodes 63 (the lower side in FIG. 3). The package structure of 67 is taken out while being held by the holding portion 41 (Fig. 3(d)). The gate portion 66 that is released from the side gate 52 can be removed in any step.
另外,在本實施形態中,亦在頂出銷54之頭部55設置有突起銷53。圖4(a)中表示頂出銷54之放大立體圖。突起銷53,較佳為:以容易從樹脂層65脫模之方式,具有例如5度左右之拔出斜度(錐度)。此外,頭部55之上面形狀不限於該圖式中所示般之圓形,如圖4(b)中所示之頭部55a般,亦可為藉由設成圓的一部分欠缺的形狀、或者橢圓形或其他多角形,而防止頂出銷54a之旋動導致突起銷53之位置偏移。 Further, in the present embodiment, the projection pin 53 is also provided on the head portion 55 of the ejector pin 54. An enlarged perspective view of the ejector pin 54 is shown in Fig. 4(a). The protruding pin 53 preferably has a pulling slope (tapering) of, for example, about 5 degrees so as to be easily released from the resin layer 65. Further, the shape of the upper surface of the head portion 55 is not limited to the circular shape as shown in the drawing, as in the case of the head portion 55a shown in FIG. 4(b), and may be a shape lacking a part of the circle, Either an elliptical shape or other polygonal shape prevents the rotation of the ejector pin 54a from shifting the position of the protruding pin 53.
圖5(a)中表示藉由圖3中所示之第1步驟及圖4中所示之突起銷53而形成之預備孔67之剖面圖。另外,在該圖中,圖中的上下係與圖3顛倒。預備孔67,其最深部未到達上下連接電極63,而在此時點,上下連接電極63成為藉由殘留樹脂層652被覆、保護的狀態。 Fig. 5(a) is a cross-sectional view showing a preliminary hole 67 formed by the first step shown in Fig. 3 and the projection pin 53 shown in Fig. 4. In addition, in the figure, the upper and lower lines in the figure are reversed from FIG. In the preliminary hole 67, the deepest portion does not reach the upper and lower connection electrodes 63, and at this time, the upper and lower connection electrodes 63 are covered and protected by the residual resin layer 652.
藉由對該預備孔67施以研磨加工或低強度之雷射加工,去除該預備孔67之底部與上下連接電極63上面之間的殘留樹脂層652,如圖5(b)所示般使上下連接電極63露出。藉由該第2步驟,形成與圖2所示之孔31a發揮相同功能之孔68。亦即,在將預備孔67之深度設為D1、孔68之深度設為D2、殘留樹脂層652之厚度設為T(較佳為100~300μm)時,T=D2-D1成立。 By removing the preliminary hole 67 by laser processing or low-intensity laser processing, the residual resin layer 652 between the bottom of the preliminary hole 67 and the upper surface of the upper and lower connection electrodes 63 is removed, as shown in FIG. 5(b). The upper and lower connection electrodes 63 are exposed. By this second step, a hole 68 having the same function as the hole 31a shown in Fig. 2 is formed. That is, when the depth of the preliminary hole 67 is D1, the depth of the hole 68 is D2, and the thickness of the residual resin layer 652 is T (preferably 100 to 300 μm), T=D2-D1 is established.
研磨加工,由於可正確控制高度方向(圖5中的上下方向)之切削深度,因此難以使上下連接電極63或基板61破損、或不會有雷射加工時所產生之填料粒子的殘留等,因此特別適合作為第2步驟中採用之加工法。此外,根據本實施形態,由於進行切削之殘留樹脂層652之厚度較小因此能抑制切削器具之耗損。 In the polishing process, since the cutting depth in the height direction (the vertical direction in FIG. 5) can be accurately controlled, it is difficult to break the upper and lower connection electrodes 63 or the substrate 61, or the residual of the filler particles generated during the laser processing. Therefore, it is particularly suitable as the processing method employed in the second step. Further, according to the present embodiment, since the thickness of the residual resin layer 652 to be cut is small, the wear of the cutting tool can be suppressed.
此外,在第2步驟中使用雷射加工的情形時,亦由於熔融之殘留樹脂層652之厚度較小因此能夠抑制雷射強度,且能夠減少上下連接電極63或基板61之破損。 Further, in the case where the laser processing is used in the second step, since the thickness of the molten residual resin layer 652 is small, the laser intensity can be suppressed, and the damage of the upper and lower connection electrodes 63 or the substrate 61 can be reduced.
因此,藉由以上說明之第1及第2步驟,能夠在不使上下連接電極63或基板61破損之下,在半導體封裝體之樹脂層65之表面651形成連接通孔用之孔68。 Therefore, by the first and second steps described above, the hole 68 for connecting the through holes can be formed on the surface 651 of the resin layer 65 of the semiconductor package without breaking the upper and lower connection electrodes 63 or the substrate 61.
另外,圖2、圖3及圖5所示之上下連接電極13a、13b及63之組成係與一般的配線電極相同,該等名稱係為了便於表示功能性特徵。 In addition, the components of the upper and lower connection electrodes 13a, 13b, and 63 shown in FIGS. 2, 3, and 5 are the same as those of a general wiring electrode, and these names are for convenience of indicating functional features.
[變形例] [Modification]
在上述之實施形態中,由於頂出銷54具有較棒狀之芯部大徑之頭部 55,因此雖在腔室51之底部設有魚眼坑部56,但頭部55亦可與頂出銷54之芯部同徑。亦即,在頂出銷54整體為棒狀之銷的情形時無需魚眼坑部56,且亦可使頂出銷54從圖中下方向插通於貫通孔57。在該情形,只要在頂出銷54之下部設置防止落下用之支承體即可。 In the above embodiment, since the ejector pin 54 has a larger diameter core portion 55, therefore, although the fish eye hole portion 56 is provided at the bottom of the chamber 51, the head portion 55 may be the same diameter as the core portion of the ejector pin 54. In other words, when the ejector pin 54 is a rod-shaped pin as a whole, the fish eye hole portion 56 is not required, and the ejector pin 54 can be inserted into the through hole 57 from the lower direction in the drawing. In this case, it is only necessary to provide a support for preventing falling on the lower portion of the ejector pin 54.
此外,亦可將圖3及圖4中所示之突起銷53之高度,變更為到達相對向之上下連接電極63,且僅以模具成形形成孔68。或者,亦可僅以研磨加工形成孔68。 Further, the height of the projection pin 53 shown in FIGS. 3 and 4 may be changed to reach the upper and lower connection electrodes 63, and the hole 68 may be formed only by the mold. Alternatively, the holes 68 may be formed only by grinding.
[形成屏蔽用之溝槽的情形之構成例] [Example of a configuration in which a trench for shielding is formed]
在上述之實施形態中,雖已針對形成連接通孔用之孔的方法進行了說明,但在將屏蔽用之溝槽形成於樹脂層的情形時,只要在第1步驟中,將對應溝槽圖案之線狀之突起設於腔室51之底部即可。關於第2步驟,係與上述之實施形態相同。 In the above-described embodiment, the method of forming the hole for connecting the through hole has been described. However, when the groove for shielding is formed in the resin layer, the corresponding groove is required in the first step. The linear protrusion of the pattern is provided at the bottom of the chamber 51. The second step is the same as the above embodiment.
作為進一步應用之例,亦可在形成有對應上下連接電極之配線圖案而非接地電極之配線圖案的前提下,在該預備溝槽上之任意位置施以研磨加工或雷射加工而使電極露出,成為連接通孔用之孔。 As an example of further application, the electrode may be exposed at any position on the preliminary trench by grinding or laser processing on the premise that a wiring pattern corresponding to the upper and lower connection electrodes is formed instead of the wiring pattern of the ground electrode. , becomes a hole for connecting through holes.
此外,亦可利用雷射加工形成預備孔或預備溝槽,接著施以研磨加工。 Further, a preliminary hole or a preliminary groove may be formed by laser processing, followed by a grinding process.
上述中,提及到亦可變更突起銷53之高度並僅以模具成形形成孔68的內容。以下記載其具體例。 In the above, it is mentioned that the height of the protruding pin 53 can also be changed and the content of the hole 68 can be formed only by the mold. Specific examples thereof are described below.
[僅以模具成形形成孔的情形:構成例1-1] [Case where the hole is formed only by the mold: Composition Example 1-1]
參照圖6,針對僅以模具成形形成孔的情形之構成之一例進行說明。在圖6中雖模具之上下係與圖3顛倒,但例如上模40b與下模50b在成形步驟中的功能係為同等,以上下哪一個模保持基板61b均可。但是,突起銷43b必須設在與保持基板61b之模相對向之模。 An example of a configuration in which a hole is formed only by a mold will be described with reference to Fig. 6 . In Fig. 6, although the upper and lower molds are reversed from Fig. 3, for example, the functions of the upper mold 40b and the lower mold 50b in the forming step are the same, and which one of the mold holding substrates 61b can be used. However, the projecting pin 43b must be provided in a mold facing the die of the holding substrate 61b.
在本構成例中,在以下模50b之保持部51b保持基板61b的狀態下(圖6(a))使下模50b上升(圖中的黑粗箭頭方向)而使上模40b與下模50b抵接且緊固模具時,突起銷43b之前端與上下連接電極63b抵接(圖6(b))。亦即,突起銷43b之高度,與從已緊固模具之狀態中的腔室41b之頂面至上下連接電極63b之上面的距離相等。因此,在樹脂材料64b硬化後,如圖6(c)般在維持使基板61b保持於下模50b之保持部51b的狀態下使下模50b下降(圖中的白粗箭頭方向),並且對頂出銷44b施加圖中的白細箭頭方向之力以進行開模,一旦進一步使下模50b下降而使樹脂層65b(相當於本發明之密封樹脂)從上模40b脫模(圖6(d)),則在樹脂層65b之表面651b形成到達上下連接電極63b之孔68b。 In the present configuration example, in a state where the holding portion 51b of the lower mold 50b holds the substrate 61b (Fig. 6(a)), the lower mold 50b is raised (the direction of the black thick arrow in the drawing), and the upper mold 40b and the lower mold 50b are caused. When the mold is abutted and fastened, the front end of the projection pin 43b abuts against the upper and lower connection electrodes 63b (Fig. 6(b)). That is, the height of the projection pin 43b is equal to the distance from the top surface of the chamber 41b in the state in which the mold has been fastened to the upper surface of the upper and lower connection electrodes 63b. Therefore, after the resin material 64b is cured, as shown in FIG. 6(c), the lower mold 50b is lowered in the state in which the substrate 61b is held by the holding portion 51b of the lower mold 50b (the direction of the white thick arrow in the drawing), and The ejector pin 44b applies a force in the direction of the white thin arrow in the drawing to perform the mold opening, and once the lower mold 50b is further lowered, the resin layer 65b (corresponding to the sealing resin of the present invention) is released from the upper mold 40b (Fig. 6 (Fig. 6 d)), a hole 68b reaching the upper and lower connection electrodes 63b is formed on the surface 651b of the resin layer 65b.
根據本構成,藉由分別使突起銷43b抵接於複數個上下連接電極63b,而將基板61b固定在保持部51b之底面。因此,能夠抑制基板61b之熱彎曲。此外,如上述般藉由決定突起銷43b之高度,能夠抑制孔68b之形成的作業量。 According to this configuration, the substrate 61b is fixed to the bottom surface of the holding portion 51b by abutting the projection pins 43b against the plurality of upper and lower connection electrodes 63b. Therefore, thermal bending of the substrate 61b can be suppressed. Further, by determining the height of the projection pin 43b as described above, the amount of work for forming the hole 68b can be suppressed.
[僅以模具成形形成孔的情形:構成例1-2] [Case where the hole is formed only by the mold: Composition Example 1-2]
參照圖7,針對僅以模具成形形成孔的情形之另一構成例進行說明。雖在圖3及圖6中已針對藉由轉移模製成形(transfer molding)形成樹脂層65及 65b的例子進行了說明,但在本構成例中則是藉由壓縮成形形成樹脂層65c。本構成例中的壓縮成形模係由上模40c與下模500構成。在上模40c設置有未圖示之基板設定部,而將基板61c以半導體晶片62c與下模500對向之方式固定在該基板設定部。 Referring to Fig. 7, another configuration example of a case where a hole is formed only by a mold will be described. Although the resin layer 65 is formed by transfer molding in FIGS. 3 and 6 and Although an example of 65b has been described, in the present configuration example, the resin layer 65c is formed by compression molding. The compression molding die in this configuration example is composed of an upper die 40c and a lower die 500. A substrate setting portion (not shown) is provided in the upper mold 40c, and the substrate 61c is fixed to the substrate setting portion such that the semiconductor wafer 62c and the lower mold 500 face each other.
在下模500,包含有腔室側面構件501、腔室底面構件502、及用於集合該等並使其上下動的基座板503。在腔室底面構件502,設置具有魚眼坑部56c之貫通孔57c,而在該貫通孔57c,從圖中下方插通具有凸緣部58的突起銷53c,凸緣部58收容於魚眼坑部56c。貫通孔57c,穿通與基板61c上之上下連接電極63c對向之位置。腔室側面構件501及突起銷53c與基座板503,透過藉由螺旋彈簧等實現之彈性構件504及505而連接。 The lower mold 500 includes a chamber side member 501, a chamber bottom member 502, and a base plate 503 for collecting the members and moving them up and down. A through hole 57c having a fisheye hole portion 56c is provided in the chamber bottom surface member 502, and a protruding pin 53c having a flange portion 58 is inserted through the through hole 57c from the lower side in the drawing, and the flange portion 58 is received in the fish eye. Pit portion 56c. The through hole 57c penetrates the position opposite to the upper and lower connection electrodes 63c on the substrate 61c. The chamber side member 501, the projection pin 53c, and the base plate 503 are connected to the elastic members 504 and 505 realized by a coil spring or the like.
首先,如圖7(a)所示般,在由腔室側面構件501及腔室底面構件502構成之下模腔室(符號省略)供應既定量之樹脂材料64c,使下模500上升(圖中黑箭頭方向)。另外,亦可在樹脂材料64c之供應前,在構成上述下模腔室之面及其周邊以如該圖所示般吸附固定脫模膜700。藉此,使樹脂層65c之脫模變容易。 First, as shown in Fig. 7(a), a mold chamber (symbol omitted) is formed by the cavity side member 501 and the chamber bottom surface member 502 to supply a predetermined amount of the resin material 64c, so that the lower mold 500 is raised (Fig. 7(a)) In the direction of the black arrow). Further, before the supply of the resin material 64c, the release film 700 may be adsorbed and fixed on the surface constituting the lower mold chamber and its periphery as shown in the figure. Thereby, the release of the resin layer 65c is facilitated.
如此般一旦使下模500上升,則首先突起銷53c與上下連接電極63c抵接並壓接,接著腔室側面構件501之上面與保持於上模40c之基板61c之周緣部抵接並緊固模具。接著,一旦使基座板503上升,則半導體晶片62c浸漬在樹脂材料64c中,腔室底面構件502,藉由對樹脂材料64c加壓而進行壓縮成形(圖7(b))。此時,由於突起銷53c與上下連接電極63c之抵接面藉由彈性構件505之彈性力而壓接,因此防止(因加熱而熔融之)樹脂材料64c往該抵接面浸入。在樹脂材料64c硬化後,一旦使下模500下降 (圖中白箭頭方向),則能夠獲得藉由壓縮成形而在樹脂層65c之表面651c形成有孔68c的半導體封裝體(圖7(c))。另外,腔室側面構件501及突起銷53c,藉由彈性構件504及505之彈性力,而相對於基座板503恢復至原位置。 When the lower mold 500 is raised as described above, first, the projection pin 53c abuts against the upper and lower connection electrodes 63c and is pressed against each other, and then the upper surface of the chamber side surface member 501 abuts and is fastened to the peripheral edge portion of the substrate 61c held by the upper mold 40c. Mold. Next, when the base plate 503 is raised, the semiconductor wafer 62c is immersed in the resin material 64c, and the chamber bottom surface member 502 is compression-molded by pressurizing the resin material 64c (Fig. 7(b)). At this time, since the abutting surface of the protruding pin 53c and the upper and lower connecting electrode 63c is pressed by the elastic force of the elastic member 505, the resin material 64c (melted by heating) is prevented from entering the abutting surface. After the resin material 64c is hardened, once the lower mold 500 is lowered (In the direction of the white arrow in the figure), a semiconductor package in which a hole 68c is formed on the surface 651c of the resin layer 65c by compression molding can be obtained (Fig. 7(c)). Further, the chamber side member 501 and the projection pin 53c are returned to the original position with respect to the base plate 503 by the elastic forces of the elastic members 504 and 505.
根據本構成,能夠藉由壓縮成形獲得與上述之構成例1-1同樣之效果。 According to this configuration, the same effects as the above-described configuration example 1-1 can be obtained by compression molding.
另外,亦可在突起銷53c與上下連接電極63c之抵接前,腔室側面構件501之上面與基板61c之周緣部抵接,其順序不設限。此外,只要在突起銷53c壓接於上下連接電極63c時,以上下連接電極63c不破損之方式,將彈性構件505之彈性力適當地調節即可。 Further, the upper surface of the chamber side surface member 501 may be in contact with the peripheral edge portion of the substrate 61c before the projection pin 53c comes into contact with the upper and lower connection electrodes 63c, and the order thereof is not limited. In addition, when the projection pin 53c is pressed against the upper and lower connection electrodes 63c, the elastic force of the elastic member 505 may be appropriately adjusted so that the upper and lower connection electrodes 63c are not broken.
[以複數個單片基板作為一封裝體進行密封的情形:構成例2-1] [Case where a plurality of single-piece substrates are sealed as one package: Configuration Example 2-1]
在已配置於一個基板上之複數個電子零件之中,有時亦存在包含有不良品的情況。在因如此般之部分的不良品產生而使良率降低的情形,被採用在樹脂密封步驟之前將基板切斷成單片並判別良品與不良品,僅對良品之單片基板進行樹脂密封的手法。作為如此般之手法中的樹脂密封步驟之前階段,例如圖8所示般,從金屬框架801之背面黏貼黏著片802,在露出於上述貫通孔800內之黏著片802之黏著層上載置單片基板61d,其中,該金屬框架801,具有形成可在水平方向配置複數個單片基板61d之中空區域的矩形狀之貫通孔800。圖8(b)係圖8(a)之B-B’線剖面圖。將如此般黏著固定有複數個單片基板61d之金屬框架801及黏著片802設定在成形模以進行樹脂密封。 Among the plurality of electronic components that have been placed on one substrate, there may be cases where defective products are included. In the case where the yield is lowered due to the occurrence of such a defective product, the substrate is cut into a single piece before the resin sealing step, and the good and defective products are discriminated, and only the single-piece substrate of the good product is resin-sealed. technique. As a stage before the resin sealing step in such a method, for example, as shown in FIG. 8, the adhesive sheet 802 is adhered from the back surface of the metal frame 801, and a single piece is placed on the adhesive layer of the adhesive sheet 802 exposed in the through hole 800. In the substrate 61d, the metal frame 801 has a rectangular through hole 800 in which a hollow region in which a plurality of individual substrates 61d are arranged in the horizontal direction is formed. Fig. 8(b) is a cross-sectional view taken along line B-B' of Fig. 8(a). The metal frame 801 and the adhesive sheet 802 to which the plurality of single-piece substrates 61d are fixed as described above are set in a molding die to perform resin sealing.
然而,由於單片基板61d黏著固定在黏著片802上,因此有 時會有因成形時之樹脂流動而產生水平面內之位置偏移的情況。如此般之位置偏移被發現在轉移模製成形中特別明顯,而恐有在將製品就每一封裝體進行切斷時,對密封固定在與事前決定之位置不同的位置之單片基板61d誤切斷之虞。此外,在藉由模具之腔室底面上之突起銷而在樹脂層形成預備孔或孔時,亦存在有因單片基板61d之位置偏移,而無法在上下連接電極之緊鄰上方形成預備孔或孔之類的問題。 However, since the single substrate 61d is adhesively fixed to the adhesive sheet 802, there is There is a case where the positional deviation in the horizontal plane occurs due to the flow of the resin during molding. Such a positional shift has been found to be particularly noticeable in the transfer molding, and it is feared that the single substrate 61d which is sealed and fixed at a position different from the previously determined position when the product is cut for each package is feared. Mistakenly cut off. Further, when the preliminary hole or the hole is formed in the resin layer by the protruding pin on the bottom surface of the cavity of the mold, there is also a positional deviation of the single-piece substrate 61d, and the preliminary hole cannot be formed immediately above the upper and lower connection electrodes. Or a problem like a hole.
因此,本發明者們提出了如圖9所示般之成形方法。首先,如圖9(a)般在下模50d之保持部51d保持有金屬框架801及黏著片802的狀態下,使下模50d上升(圖中的黑粗箭頭方向)並使上模40d與下模50d抵接且緊固模具。藉此,如圖9(b)所示般,突起銷43d之前端與上下連接電極63d之上面抵接。在該狀態下,在腔室41d(及下模50d側中的金屬框架801之貫通孔800內)填充樹脂材料64d,在該樹脂材料64d硬化後,如圖9(c)般,在下模50d之保持部51d維持保持有金屬框架801及黏著片802的狀態下使下模50d下降(圖中的白粗箭頭方向),並且對頂出銷44d施加圖中的白細箭頭方向之力以進行開模,一旦使下模50d進一步下降而使樹脂層65d(相當於本發明之密封樹脂)從上模40d脫模(圖9(d)),則在樹脂層65d之表面651d形成到達上下連接電極63d之孔68d。 Therefore, the inventors have proposed a forming method as shown in Fig. 9. First, in the state in which the metal frame 801 and the adhesive sheet 802 are held by the holding portion 51d of the lower mold 50d as in Fig. 9(a), the lower mold 50d is raised (the direction of the black thick arrow in the drawing) and the upper mold 40d is lowered. The mold 50d abuts and fastens the mold. Thereby, as shown in FIG. 9(b), the front end of the projection pin 43d abuts against the upper surface of the upper and lower connection electrodes 63d. In this state, the resin material 64d is filled in the chamber 41d (and the through hole 800 of the metal frame 801 in the lower mold 50d side), and after the resin material 64d is cured, as in the lower mold 50d as shown in Fig. 9(c) The holding portion 51d maintains the lower metal mold 801 and the adhesive sheet 802, and lowers the lower mold 50d (in the direction of the white thick arrow in the drawing), and applies a force in the direction of the white thin arrow in the drawing to the ejector pin 44d. When the lower mold 50d is further lowered and the resin layer 65d (corresponding to the sealing resin of the present invention) is released from the upper mold 40d (Fig. 9(d)), the surface 651d of the resin layer 65d is formed to reach the upper and lower connections. The hole 68d of the electrode 63d.
根據本構成,由於在樹脂材料64d之填充前,突起銷43d之前端與上下連接電極63d抵接,因此單片基板61d及黏著片802由突起銷43d與保持部51d而夾持,黏著片802上之單片基板61d之位置被固定。因此,能夠防止起因於樹脂流動所造成的在黏著片802上之單片基板61d之位置偏移。此外,與上述之構成例1-1及1-2同樣地,亦具有抑制熱彎曲之效 果。 According to this configuration, the front end of the projection pin 43d is in contact with the upper and lower connection electrodes 63d before the filling of the resin material 64d. Therefore, the single-piece substrate 61d and the adhesive sheet 802 are sandwiched by the projection pin 43d and the holding portion 51d, and the adhesive sheet 802 is adhered. The position of the upper single substrate 61d is fixed. Therefore, it is possible to prevent the positional displacement of the single-piece substrate 61d on the adhesive sheet 802 due to the flow of the resin. Further, similarly to the above-described configuration examples 1-1 and 1-2, it also has the effect of suppressing thermal bending. fruit.
[以複數個單片基板作為一封裝體進行密封的情形:構成例2-2] [Case where a plurality of single-piece substrates are sealed as a package: Configuration Example 2-2]
亦在本例中,可適用類似於上述之構成例1-2的構成。關於與上述構成例1-2同樣之部分則適當地省略說明。如圖10(a)所示般,首先,使用由上模40e與下模500a構成之壓縮成形模,且將黏著固定有複數個單片基板61e之金屬框架801及黏著片802固定在上模40e所具備之未圖示之設定部。接著,使腔室側面構件501a、突起銷53e分別與金屬框架801、上下連接電極63e抵接。在此時點,單片基板61e及黏著片802由突起銷53e與上模40e之設定部所夾持,在黏著片802上之單片基板61e之位置被固定。進一步地,在圖10(b)所示之狀態中,藉由彈性構件505a之彈性力,而增大對單片基板61e及黏著片802之夾持壓力。 Also in this example, a configuration similar to the configuration example 1-2 described above can be applied. The same portions as those of the above configuration example 1-2 will be appropriately omitted. As shown in Fig. 10 (a), first, a compression molding die composed of an upper die 40e and a lower die 500a is used, and a metal frame 801 and an adhesive sheet 802 to which a plurality of single-piece substrates 61e are adhered and fixed are fixed to the upper die. A setting unit (not shown) provided in 40e. Next, the chamber side surface member 501a and the projection pin 53e are brought into contact with the metal frame 801 and the upper and lower connection electrodes 63e, respectively. At this time, the single-piece substrate 61e and the adhesive sheet 802 are sandwiched by the projection pins 53e and the setting portion of the upper mold 40e, and are fixed at the position of the single-piece substrate 61e on the adhesive sheet 802. Further, in the state shown in FIG. 10(b), the nip pressure between the single-piece substrate 61e and the adhesive sheet 802 is increased by the elastic force of the elastic member 505a.
根據本構成,能夠藉由壓縮成形獲得與上述之構成例2-1同樣之效果。 According to this configuration, the same effects as the above-described configuration example 2-1 can be obtained by compression molding.
另外,上述之實施形態及應用例係本發明之一例,即便是在本發明之趣旨之範圍內適當地進行變更、修改、追加、組合,當然亦包含在本申請專利範圍中。 It is to be understood that the above-described embodiments and examples of the invention are intended to be modified, modified, added, and combined as appropriate within the scope of the present invention.
61‧‧‧基板 61‧‧‧Substrate
63‧‧‧上下連接電極 63‧‧‧Upper and lower connecting electrodes
65‧‧‧樹脂層 65‧‧‧ resin layer
67‧‧‧預備孔 67‧‧‧Preparation hole
68‧‧‧孔 68‧‧‧ holes
651‧‧‧樹脂層之表面 651‧‧‧ surface of resin layer
652‧‧‧殘留樹脂層 652‧‧‧Residual resin layer
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| TWI729453B (en) * | 2019-08-14 | 2021-06-01 | 華暉興業有限公司 | Structure improvement of power module |
| CN112992836B (en) * | 2019-12-12 | 2023-01-17 | 珠海格力电器股份有限公司 | A kind of copper bridge double-sided cooling chip and its preparation method |
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| TW201719778A (en) | 2017-06-01 |
| CN108962768A (en) | 2018-12-07 |
| KR101724199B1 (en) | 2017-04-06 |
| CN108962768B (en) | 2022-04-29 |
| KR20160010305A (en) | 2016-01-27 |
| TW201604976A (en) | 2016-02-01 |
| JP2016025212A (en) | 2016-02-08 |
| KR101807464B1 (en) | 2017-12-08 |
| CN105321831A (en) | 2016-02-10 |
| CN105321831B (en) | 2018-07-06 |
| TWI644372B (en) | 2018-12-11 |
| KR20170040150A (en) | 2017-04-12 |
| JP6242763B2 (en) | 2017-12-06 |
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