[go: up one dir, main page]

TWI563881B - Substrate processing device and impedance matching method - Google Patents

Substrate processing device and impedance matching method

Info

Publication number
TWI563881B
TWI563881B TW101139904A TW101139904A TWI563881B TW I563881 B TWI563881 B TW I563881B TW 101139904 A TW101139904 A TW 101139904A TW 101139904 A TW101139904 A TW 101139904A TW I563881 B TWI563881 B TW I563881B
Authority
TW
Taiwan
Prior art keywords
processing device
substrate processing
impedance matching
matching method
impedance
Prior art date
Application number
TW101139904A
Other languages
English (en)
Other versions
TW201330704A (zh
Inventor
Harutyun Melikyan
Dukhyun Son
Wonteak Park
Hyo Seong Seong
Original Assignee
Semes Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semes Co Ltd filed Critical Semes Co Ltd
Publication of TW201330704A publication Critical patent/TW201330704A/zh
Application granted granted Critical
Publication of TWI563881B publication Critical patent/TWI563881B/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32174Circuits specially adapted for controlling the RF discharge
    • H01J37/32183Matching circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/321Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • H05H1/46Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • H05H1/46Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/4645Radiofrequency discharges
    • H05H1/4652Radiofrequency discharges using inductive coupling means, e.g. coils
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H2242/00Auxiliary systems
    • H05H2242/20Power circuits

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
TW101139904A 2011-10-31 2012-10-29 Substrate processing device and impedance matching method TWI563881B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20110112415 2011-10-31
KR1020110140018A KR20130047532A (ko) 2011-10-31 2011-12-22 기판처리장치 및 임피던스매칭방법

Publications (2)

Publication Number Publication Date
TW201330704A TW201330704A (zh) 2013-07-16
TWI563881B true TWI563881B (en) 2016-12-21

Family

ID=48659004

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101139904A TWI563881B (en) 2011-10-31 2012-10-29 Substrate processing device and impedance matching method

Country Status (2)

Country Link
KR (1) KR20130047532A (zh)
TW (1) TWI563881B (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101544975B1 (ko) 2013-09-30 2015-08-18 주식회사 플라즈마트 임피던스 매칭 방법 및 임피던스 매칭 시스템
KR101777762B1 (ko) 2015-09-03 2017-09-12 에이피시스템 주식회사 고주파 전원 공급장치 및 이를 포함하는 기판 처리장치
TWI894169B (zh) * 2019-10-01 2025-08-21 美商蘭姆研究公司 包含變壓器及/或變壓器耦合組合器的射頻分配電路
KR102906594B1 (ko) 2019-12-02 2025-12-30 램 리써치 코포레이션 Rf (radio-frequency) 보조된 플라즈마 생성시 임피던스 변환
KR20230021739A (ko) 2020-06-12 2023-02-14 램 리써치 코포레이션 Rf 커플링 구조체들에 의한 플라즈마 형성의 제어
KR20220067554A (ko) 2020-11-16 2022-05-25 세메스 주식회사 기판 처리 장치 및 임피던스 정합 방법
KR102427905B1 (ko) * 2020-12-21 2022-08-02 주식회사 테스 기판처리장치

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06325897A (ja) * 1993-05-17 1994-11-25 Adtec:Kk 高周波プラズマ用インピーダンス整合装置
US6424232B1 (en) * 1999-11-30 2002-07-23 Advanced Energy's Voorhees Operations Method and apparatus for matching a variable load impedance with an RF power generator impedance
TWI299965B (zh) * 2001-11-27 2008-08-11 Alps Electric Co Ltd
TW200920192A (en) * 2007-10-22 2009-05-01 New Power Plasma Co Ltd Capacitively coupled plasma reactor

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06325897A (ja) * 1993-05-17 1994-11-25 Adtec:Kk 高周波プラズマ用インピーダンス整合装置
US6424232B1 (en) * 1999-11-30 2002-07-23 Advanced Energy's Voorhees Operations Method and apparatus for matching a variable load impedance with an RF power generator impedance
TWI299965B (zh) * 2001-11-27 2008-08-11 Alps Electric Co Ltd
TW200920192A (en) * 2007-10-22 2009-05-01 New Power Plasma Co Ltd Capacitively coupled plasma reactor

Also Published As

Publication number Publication date
TW201330704A (zh) 2013-07-16
KR20130047532A (ko) 2013-05-08

Similar Documents

Publication Publication Date Title
TWI560767B (en) Substrate processing apparatus and substrate processing method
TWI561317B (en) Substrate cleaning apparatus and substrate processing apparatus
KR102002042B9 (ko) 기판 처리 장치 및 기판 처리 방법
SG11201402768WA (en) Plasma processing apparatus and plasma processing method
EP2731332A4 (en) INFORMATION PROCESSING DEVICE AND INFORMATION PROCESSING METHOD
EP2717186A4 (en) INFORMATION PROCESSING DEVICE AND INFORMATION PROCESSING METHOD
TWI563560B (en) Substrate processing apparatus and substrate processing method
SG11201402821VA (en) Method and device for sample processing
SG10201508582WA (en) Substrate processing system and method
EP2617521A4 (en) Processing apparatus and processing method
EP2546768A4 (en) Method and device for forming surface processing data
TWI562221B (en) Substrate processing method and substrate processing apparatus
TWI560159B (en) Glass substrate processing apparatus and processing method thereof
GB201110363D0 (en) Signal processing methods and apparatus
SG11201404015TA (en) Substrate etching method and substrate processing device
EP2728350A4 (en) METHOD AND DEVICE FOR PROCESSING ANALYSIS DATA
KR101503512B9 (ko) 기판 처리 장치 및 기판 처리 방법
EP2549647A4 (en) METHOD AND CIRCUIT FOR IMPEDANCE ADAPTATION
SG10201600232RA (en) Signal processing method and apparatus
TWI563881B (en) Substrate processing device and impedance matching method
TWI370513B (en) Substrate processing apparatus and substrate processing method
EP2744308B8 (en) Processing apparatus and processing method
TWI560008B (en) Device and method for processing wafer shaped articles
EP2711835A4 (en) ARITHMETIC TREATMENT DEVICE AND METHOD
SG2014012371A (en) Vacuum processing device and vacuum processing method