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TWI563681B - Led die and method for manufacturing the same - Google Patents

Led die and method for manufacturing the same

Info

Publication number
TWI563681B
TWI563681B TW101112206A TW101112206A TWI563681B TW I563681 B TWI563681 B TW I563681B TW 101112206 A TW101112206 A TW 101112206A TW 101112206 A TW101112206 A TW 101112206A TW I563681 B TWI563681 B TW I563681B
Authority
TW
Taiwan
Prior art keywords
manufacturing
same
led die
die
led
Prior art date
Application number
TW101112206A
Other languages
English (en)
Other versions
TW201340388A (zh
Inventor
Chih Jung Liu
Tzu Chien Hung
Original Assignee
Advanced Optoelectronic Tech
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Optoelectronic Tech filed Critical Advanced Optoelectronic Tech
Publication of TW201340388A publication Critical patent/TW201340388A/zh
Application granted granted Critical
Publication of TWI563681B publication Critical patent/TWI563681B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/853—Encapsulations characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/882—Scattering means
TW101112206A 2012-03-30 2012-04-06 Led die and method for manufacturing the same TWI563681B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201210089533.2A CN103367595B (zh) 2012-03-30 2012-03-30 发光二极管晶粒及其制造方法

Publications (2)

Publication Number Publication Date
TW201340388A TW201340388A (zh) 2013-10-01
TWI563681B true TWI563681B (en) 2016-12-21

Family

ID=49233696

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101112206A TWI563681B (en) 2012-03-30 2012-04-06 Led die and method for manufacturing the same

Country Status (4)

Country Link
US (1) US9054288B2 (zh)
JP (1) JP5632034B2 (zh)
CN (1) CN103367595B (zh)
TW (1) TWI563681B (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101517995B1 (ko) * 2013-03-29 2015-05-07 경희대학교 산학협력단 그래핀에 의하여 광증폭된 발광 소자 및 이의 제조방법
TW201616674A (zh) * 2014-10-17 2016-05-01 新世紀光電股份有限公司 發光二極體基板之圖形化微結構
JP2017054901A (ja) * 2015-09-09 2017-03-16 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光装置とその製造方法
CN110993764A (zh) * 2019-12-17 2020-04-10 湘能华磊光电股份有限公司 一种具有粗化结构的led芯片及其制备方法
US12040432B2 (en) * 2020-10-30 2024-07-16 Lumileds Llc Light emitting diode devices with patterned TCO layer including different thicknesses

Citations (8)

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TWI229949B (en) * 2004-01-19 2005-03-21 Genesis Photonics Inc Manufacturing process and product of LED
US20050145862A1 (en) * 2003-12-31 2005-07-07 Lg Electronics Inc. Light emitting device and manufacturing method thereof
US20070018183A1 (en) * 2005-07-21 2007-01-25 Cree, Inc. Roughened high refractive index layer/LED for high light extraction
US20090052159A1 (en) * 2007-08-22 2009-02-26 Saori Abe Light-emitting device and method for manufacturing the same
US20090309119A1 (en) * 2005-12-14 2009-12-17 Showa Denko K.K. Gallium Nitride Based Compound Semiconductor Light-Emitting Device and Method for manufacturing Same
US20100327300A1 (en) * 2009-06-25 2010-12-30 Koninklijke Philips Electronics N.V. Contact for a semiconductor light emitting device
US7893448B2 (en) * 2005-05-24 2011-02-22 Lg Electronics Inc. Light emitting device having nano structures for light extraction
US20110260196A1 (en) * 2007-12-28 2011-10-27 Mitsubishi Chemical Corporation Led element and method for manufacturing led element

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JP2000216431A (ja) * 1998-11-19 2000-08-04 Sanyo Electric Co Ltd 発光素子
US6657236B1 (en) * 1999-12-03 2003-12-02 Cree Lighting Company Enhanced light extraction in LEDs through the use of internal and external optical elements
US6603152B2 (en) * 2000-09-04 2003-08-05 Samsung Electro-Mechanics Co., Ltd. Blue light emitting diode with electrode structure for distributing a current density
US6882100B2 (en) * 2001-04-30 2005-04-19 Hewlett-Packard Development Company, L.P. Dielectric light device
JP2005277374A (ja) * 2004-02-26 2005-10-06 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子及びその製造方法
JP4371029B2 (ja) * 2004-09-29 2009-11-25 サンケン電気株式会社 半導体発光素子およびその製造方法
US9508902B2 (en) * 2005-02-21 2016-11-29 Epistar Corporation Optoelectronic semiconductor device
JP4986445B2 (ja) * 2005-12-13 2012-07-25 昭和電工株式会社 窒化ガリウム系化合物半導体発光素子
US20100273331A1 (en) * 2006-07-05 2010-10-28 National Central University Method of fabricating a nano/micro structure
JP5318353B2 (ja) 2007-02-14 2013-10-16 三菱化学株式会社 ＧａＮ系ＬＥＤ素子および発光装置
TWI357886B (en) * 2007-08-13 2012-02-11 Epistar Corp Stamp having nanometer scale structure and applica
CN101257075B (zh) * 2008-03-13 2010-05-12 鹤山丽得电子实业有限公司 一种发光二极管器件及其制造方法
EP2253988A1 (en) * 2008-09-19 2010-11-24 Christie Digital Systems USA, Inc. A light integrator for more than one lamp
KR101941029B1 (ko) * 2011-06-30 2019-01-22 엘지이노텍 주식회사 발광소자 및 이를 포함하는 조명시스템
US8759127B2 (en) * 2011-08-31 2014-06-24 Toshiba Techno Center Inc. Gold micromask for roughening to promote light extraction in an LED

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050145862A1 (en) * 2003-12-31 2005-07-07 Lg Electronics Inc. Light emitting device and manufacturing method thereof
TWI229949B (en) * 2004-01-19 2005-03-21 Genesis Photonics Inc Manufacturing process and product of LED
US7893448B2 (en) * 2005-05-24 2011-02-22 Lg Electronics Inc. Light emitting device having nano structures for light extraction
US20070018183A1 (en) * 2005-07-21 2007-01-25 Cree, Inc. Roughened high refractive index layer/LED for high light extraction
US20090309119A1 (en) * 2005-12-14 2009-12-17 Showa Denko K.K. Gallium Nitride Based Compound Semiconductor Light-Emitting Device and Method for manufacturing Same
US20090052159A1 (en) * 2007-08-22 2009-02-26 Saori Abe Light-emitting device and method for manufacturing the same
US20110260196A1 (en) * 2007-12-28 2011-10-27 Mitsubishi Chemical Corporation Led element and method for manufacturing led element
US20100327300A1 (en) * 2009-06-25 2010-12-30 Koninklijke Philips Electronics N.V. Contact for a semiconductor light emitting device

Also Published As

Publication number Publication date
US20130256702A1 (en) 2013-10-03
JP2013214743A (ja) 2013-10-17
TW201340388A (zh) 2013-10-01
CN103367595A (zh) 2013-10-23
JP5632034B2 (ja) 2014-11-26
US9054288B2 (en) 2015-06-09
CN103367595B (zh) 2016-02-10

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees