TWI563663B - Semiconductor device and fabrication method thereof - Google Patents
Semiconductor device and fabrication method thereofInfo
- Publication number
- TWI563663B TWI563663B TW102117265A TW102117265A TWI563663B TW I563663 B TWI563663 B TW I563663B TW 102117265 A TW102117265 A TW 102117265A TW 102117265 A TW102117265 A TW 102117265A TW I563663 B TWI563663 B TW I563663B
- Authority
- TW
- Taiwan
- Prior art keywords
- semiconductor device
- fabrication method
- fabrication
- semiconductor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW102117265A TWI563663B (en) | 2013-05-15 | 2013-05-15 | Semiconductor device and fabrication method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW102117265A TWI563663B (en) | 2013-05-15 | 2013-05-15 | Semiconductor device and fabrication method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201444086A TW201444086A (en) | 2014-11-16 |
| TWI563663B true TWI563663B (en) | 2016-12-21 |
Family
ID=52423425
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102117265A TWI563663B (en) | 2013-05-15 | 2013-05-15 | Semiconductor device and fabrication method thereof |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TWI563663B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9941278B2 (en) * | 2016-07-06 | 2018-04-10 | Globalfoundries Inc. | Method and apparatus for placing a gate contact inside an active region of a semiconductor |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7646046B2 (en) * | 2006-11-14 | 2010-01-12 | Infineon Technologies Ag | Field effect transistor with a fin structure |
| US7700456B2 (en) * | 2006-10-16 | 2010-04-20 | Elpida Memory, Inc. | Semiconductor device and manufacturing method of the same |
| US20110111592A1 (en) * | 2009-11-09 | 2011-05-12 | International Business Machines Corporation | Angle ion implant to re-shape sidewall image transfer patterns |
-
2013
- 2013-05-15 TW TW102117265A patent/TWI563663B/en active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7700456B2 (en) * | 2006-10-16 | 2010-04-20 | Elpida Memory, Inc. | Semiconductor device and manufacturing method of the same |
| US7646046B2 (en) * | 2006-11-14 | 2010-01-12 | Infineon Technologies Ag | Field effect transistor with a fin structure |
| US20110111592A1 (en) * | 2009-11-09 | 2011-05-12 | International Business Machines Corporation | Angle ion implant to re-shape sidewall image transfer patterns |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201444086A (en) | 2014-11-16 |
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