[go: up one dir, main page]

TWI563597B - Bipolar junction transistors with reduced base-collector junction capacitance and fabrication methods thereof - Google Patents

Bipolar junction transistors with reduced base-collector junction capacitance and fabrication methods thereof

Info

Publication number
TWI563597B
TWI563597B TW102112645A TW102112645A TWI563597B TW I563597 B TWI563597 B TW I563597B TW 102112645 A TW102112645 A TW 102112645A TW 102112645 A TW102112645 A TW 102112645A TW I563597 B TWI563597 B TW I563597B
Authority
TW
Taiwan
Prior art keywords
fabrication methods
reduced base
collector
transistors
bipolar junction
Prior art date
Application number
TW102112645A
Other languages
English (en)
Other versions
TW201426905A (zh
Inventor
Peng Cheng
David L Harame
Robert K Leidy
Qizhi Liu
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of TW201426905A publication Critical patent/TW201426905A/zh
Application granted granted Critical
Publication of TWI563597B publication Critical patent/TWI563597B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/051—Manufacture or treatment of vertical BJTs
    • H10D10/054—Forming extrinsic base regions on silicon substrate after insulating device isolation in vertical BJTs having single crystalline emitter, collector or base regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H10D10/441—Vertical BJTs having an emitter-base junction ending at a main surface of the body and a base-collector junction ending at a lateral surface of the body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
TW102112645A 2012-04-20 2013-04-10 Bipolar junction transistors with reduced base-collector junction capacitance and fabrication methods thereof TWI563597B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13/452,335 US20130277804A1 (en) 2012-04-20 2012-04-20 Bipolar junction transistors with reduced base-collector junction capacitance

Publications (2)

Publication Number Publication Date
TW201426905A TW201426905A (zh) 2014-07-01
TWI563597B true TWI563597B (en) 2016-12-21

Family

ID=49379336

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102112645A TWI563597B (en) 2012-04-20 2013-04-10 Bipolar junction transistors with reduced base-collector junction capacitance and fabrication methods thereof

Country Status (3)

Country Link
US (1) US20130277804A1 (zh)
TW (1) TWI563597B (zh)
WO (1) WO2013158421A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI711117B (zh) * 2018-06-20 2020-11-21 美商格芯（美國）集成電路科技有限公司 異質接面雙極性電晶體及形成異質接面雙極性電晶體之方法

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9153569B1 (en) * 2014-03-21 2015-10-06 Texas Instruments Incorporated Segmented NPN vertical bipolar transistor
US9722057B2 (en) * 2015-06-23 2017-08-01 Global Foundries Inc. Bipolar junction transistors with a buried dielectric region in the active device region
KR102525873B1 (ko) * 2015-10-16 2023-04-27 삼성전자주식회사 반도체 공정 시뮬레이션 장치 및 그것의 시뮬레이션 방법
US9812447B2 (en) * 2016-02-02 2017-11-07 Globalfoundries Inc. Bipolar junction transistors with extrinsic device regions free of trench isolation
US10367083B2 (en) * 2016-03-25 2019-07-30 Globalfoundries Inc. Compact device structures for a bipolar junction transistor
US9847408B1 (en) * 2016-06-21 2017-12-19 Globalfoundries Inc. Fabrication of integrated circuit structures for bipolor transistors
US9935186B1 (en) * 2016-09-21 2018-04-03 International Business Machines Corporation Method of manufacturing SOI lateral Si-emitter SiGe base HBT
KR102402673B1 (ko) * 2017-04-28 2022-05-26 삼성전자주식회사 Beol의 공정 변이를 고려하여 집적 회로를 설계하기 위한 컴퓨터 구현 방법 및 컴퓨팅 시스템
FR3078197B1 (fr) * 2018-02-21 2020-03-13 Stmicroelectronics (Crolles 2) Sas Dispositif de transistor bipolaire et procede de fabrication correspondant
DE102020118776B4 (de) 2019-10-31 2025-11-13 Taiwan Semiconductor Manufacturing Co., Ltd. Bipolartransistor (bjt) mit einem dielektrischen mehrschichtbasisfilm
US11183587B2 (en) * 2019-10-31 2021-11-23 Taiwan Semiconductor Manufacturing Company, Ltd. Bipolar junction transistor (BJT) comprising a multilayer base dielectric film
US11588043B2 (en) * 2021-04-14 2023-02-21 Globalfoundries U.S. Inc. Bipolar transistor with elevated extrinsic base and methods to form same

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5345102A (en) * 1992-02-28 1994-09-06 Nec Corporation Bipolar transistor having collector electrode penetrating emitter and base regions
US6635543B2 (en) * 2000-10-17 2003-10-21 International Business Machines Corporation SOI hybrid structure with selective epitaxial growth of silicon
US20050145953A1 (en) * 2004-01-05 2005-07-07 Chartered Semiconductor Manufacturing Ltd Heterojunction BiCMOS integrated circuits and method therefor
US20050151225A1 (en) * 2004-01-09 2005-07-14 International Business Machines Corporation Bipolar transistor structure with self-aligned raised extrinsic base and methods
TW200539262A (en) * 2004-03-13 2005-12-01 Ibm Methods of base formation in a BiCMOS process
US20070207567A1 (en) * 2004-04-14 2007-09-06 Geiss Peter J Method of Base Formation in a Bicmos Process
TW200741916A (en) * 2006-01-13 2007-11-01 Ibm Low resistance and inductance backside through vias and methods of fabricating same
US20090286368A1 (en) * 2008-05-16 2009-11-19 Chung Hon Lam process for pcm integration with poly-emitter bjt as access device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH027529A (ja) * 1988-06-27 1990-01-11 Nec Corp バイポーラトランジスタ及びその製造方法
JP2003303830A (ja) * 2002-04-12 2003-10-24 Nec Electronics Corp 半導体装置及びその製造方法
US7190046B2 (en) * 2004-03-29 2007-03-13 International Business Machines Corporation Bipolar transistor having reduced collector-base capacitance
US7892910B2 (en) * 2007-02-28 2011-02-22 International Business Machines Corporation Bipolar transistor with raised extrinsic self-aligned base using selective epitaxial growth for BiCMOS integration
US8237191B2 (en) * 2009-08-11 2012-08-07 International Business Machines Corporation Heterojunction bipolar transistors and methods of manufacture

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5345102A (en) * 1992-02-28 1994-09-06 Nec Corporation Bipolar transistor having collector electrode penetrating emitter and base regions
US6635543B2 (en) * 2000-10-17 2003-10-21 International Business Machines Corporation SOI hybrid structure with selective epitaxial growth of silicon
US20050145953A1 (en) * 2004-01-05 2005-07-07 Chartered Semiconductor Manufacturing Ltd Heterojunction BiCMOS integrated circuits and method therefor
US20050151225A1 (en) * 2004-01-09 2005-07-14 International Business Machines Corporation Bipolar transistor structure with self-aligned raised extrinsic base and methods
TW200539262A (en) * 2004-03-13 2005-12-01 Ibm Methods of base formation in a BiCMOS process
US20070207567A1 (en) * 2004-04-14 2007-09-06 Geiss Peter J Method of Base Formation in a Bicmos Process
TW200741916A (en) * 2006-01-13 2007-11-01 Ibm Low resistance and inductance backside through vias and methods of fabricating same
US20090286368A1 (en) * 2008-05-16 2009-11-19 Chung Hon Lam process for pcm integration with poly-emitter bjt as access device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI711117B (zh) * 2018-06-20 2020-11-21 美商格芯（美國）集成電路科技有限公司 異質接面雙極性電晶體及形成異質接面雙極性電晶體之方法

Also Published As

Publication number Publication date
WO2013158421A1 (en) 2013-10-24
US20130277804A1 (en) 2013-10-24
TW201426905A (zh) 2014-07-01

Similar Documents

Publication Publication Date Title
TWI563597B (en) Bipolar junction transistors with reduced base-collector junction capacitance and fabrication methods thereof
GB2524699B (en) A bipolar junction transistor structure
EP3075735A4 (en) Glycolurils having functional group and use thereof
PT3040195T (pt) Estrutura em sanduíche e artigo moldado integrado usando a mesma, bem como seus métodos de produção
IL231367A0 (en) Ophthalmic devices with organic semiconductor transistors
EP2908676A4 (en) ELECTRONICALLY ADAPTABLE ARTICLES
GB2523479B (en) Adjustable emitter and preform
GB2497177B (en) A bipolar transistor with a raised collector pedestal for reduced capacitance and a method of forming the transistor
EP2851046A4 (en) PORTABLE ARTICLE
EP2968445A4 (en) NOVEL CYCLOSPORINE DERIVATIVES AND USES THEREOF
EP2979200A4 (en) CHARACTERISTICS AND QUESTIONS
IL239547A0 (en) An exhaust component for drip irrigation and a drip irrigation device that includes this exhaust component
EP3026695A4 (en) Method for manufacturing injection-enhanced insulated-gate bipolar transistor
DK2990473T3 (da) Fermenteret maltdrik
GB201514440D0 (en) Organic semiconducting blend
DK3549632T3 (da) Multilumenkateter med forbedrede strømningsegenskaber
EP3027727A4 (en) Annular culture dish
EP3016144A4 (en) Field-stop reverse conducting insulated gate bipolar transistor and manufacturing method therefor
PL3275991T3 (pl) Tabletka środka czyszczącego ze zintegrowanym środkiem do wstępnego czyszczenia
EP3024893A4 (en) Molded article and composition used in its fabrication
GB201317761D0 (en) Reducing parasitic leakages in transistor arrays
TWI562368B (en) Semiconductor structure and process thereof
GB201320780D0 (en) Baby Standing Support Pole
TWI563572B (en) Semiconductor structure and process thereof
GB2520399B (en) Silicon heterojunction photovoltaic device with non-crystalline wide band gap emitter

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees