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TWI563580B - - Google Patents

Info

Publication number
TWI563580B
TWI563580B TW103119855A TW103119855A TWI563580B TW I563580 B TWI563580 B TW I563580B TW 103119855 A TW103119855 A TW 103119855A TW 103119855 A TW103119855 A TW 103119855A TW I563580 B TWI563580 B TW I563580B
Authority
TW
Taiwan
Application number
TW103119855A
Other languages
Chinese (zh)
Other versions
TW201511150A (en
Inventor
Michitaka Mikami
Bin Liu
Hiroyuki Amano
takuya Hamamoto
Yoshiyuki Imaizumi
Yuka Nagae
Tsutomu Yamashita
Original Assignee
Tanaka Electronics Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tanaka Electronics Ind filed Critical Tanaka Electronics Ind
Publication of TW201511150A publication Critical patent/TW201511150A/en
Application granted granted Critical
Publication of TWI563580B publication Critical patent/TWI563580B/zh

Links

Classifications

    • H10W72/015
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/43Manufacturing methods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/43Manufacturing methods
    • H01L2224/438Post-treatment of the connector
    • H01L2224/43848Thermal treatments, e.g. annealing, controlled cooling
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147Copper (Cu) as principal constituent
    • H10W72/07533
    • H10W72/50
    • H10W72/522
    • H10W72/534
    • H10W74/00
TW103119855A 2013-06-13 2014-06-09 Structure of plated copper wire for ultrasonic welding TW201511150A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013124903A JP5546670B1 (en) 2013-06-13 2013-06-13 Structure of coated copper wire for ultrasonic bonding

Publications (2)

Publication Number Publication Date
TW201511150A TW201511150A (en) 2015-03-16
TWI563580B true TWI563580B (en) 2016-12-21

Family

ID=51409577

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103119855A TW201511150A (en) 2013-06-13 2014-06-09 Structure of plated copper wire for ultrasonic welding

Country Status (4)

Country Link
JP (1) JP5546670B1 (en)
CN (1) CN104241237B (en)
SG (1) SG10201403091UA (en)
TW (1) TW201511150A (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG11201608819VA (en) 2014-04-21 2016-12-29 Nippon Steel & Sumikin Mat Co Bonding wire for semiconductor device
DE112015007265B4 (en) * 2015-05-26 2025-06-05 Nippon Micrometal Corporation Bonding wire for semiconductor device
WO2016189752A1 (en) * 2015-05-26 2016-12-01 日鉄住金マイクロメタル株式会社 Bonding wire for semiconductor device
CN112038312B (en) * 2015-05-26 2024-08-30 日铁新材料股份有限公司 Bonding wire for semiconductor devices
CN106489199B (en) 2015-06-15 2019-09-03 日铁新材料股份有限公司 Bonding wire for semiconductor device
JP5893230B1 (en) 2015-07-23 2016-03-23 日鉄住金マイクロメタル株式会社 Bonding wires for semiconductor devices
SG10201705029XA (en) * 2015-08-12 2017-07-28 Nippon Micrometal Corp Bonding wire for semiconductor device
JP6410692B2 (en) * 2015-08-28 2018-10-24 田中電子工業株式会社 Copper alloy bonding wire
WO2017221434A1 (en) * 2016-06-20 2017-12-28 日鉄住金マイクロメタル株式会社 Bonding wire for semiconductor device
CN116875840B (en) * 2023-09-05 2023-11-21 汕头市骏码凯撒有限公司 High-power blister copper wire resistant to high temperature, oxidation and thermal fatigue and method for manufacturing the same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06151497A (en) * 1992-11-10 1994-05-31 Tanaka Denshi Kogyo Kk Wire for bonding semiconductor element and its manufacture
JP2009088132A (en) * 2007-09-28 2009-04-23 Tanaka Electronics Ind Co Ltd Bonding wire
US20120104613A1 (en) * 2007-07-24 2012-05-03 Nippon Micrometal Corporation Bonding wire for semiconductor device
WO2013018238A1 (en) * 2011-08-01 2013-02-07 タツタ電線株式会社 Ball bonding wire

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0750720B2 (en) * 1989-11-08 1995-05-31 株式会社東芝 Bonding wire and semiconductor device having the same
JPH06283565A (en) * 1993-03-29 1994-10-07 Nippon Steel Corp High frequency bonding wire
JPH09246310A (en) * 1996-03-04 1997-09-19 Hitachi Ltd Semiconductor device
KR100280084B1 (en) * 1998-12-29 2001-03-02 마이클 디. 오브라이언 Wire for semiconductor device
TW200414453A (en) * 2002-03-26 2004-08-01 Sumitomo Electric Wintec Inc Bonding wire and IC device using the bonding wire
JP2005129603A (en) * 2003-10-22 2005-05-19 Mitsumi Electric Co Ltd Semiconductor integrated circuit device
JP5381816B2 (en) * 2010-03-03 2014-01-08 三菱電機株式会社 Wire bonding method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06151497A (en) * 1992-11-10 1994-05-31 Tanaka Denshi Kogyo Kk Wire for bonding semiconductor element and its manufacture
US20120104613A1 (en) * 2007-07-24 2012-05-03 Nippon Micrometal Corporation Bonding wire for semiconductor device
JP2009088132A (en) * 2007-09-28 2009-04-23 Tanaka Electronics Ind Co Ltd Bonding wire
WO2013018238A1 (en) * 2011-08-01 2013-02-07 タツタ電線株式会社 Ball bonding wire

Also Published As

Publication number Publication date
JP5546670B1 (en) 2014-07-09
CN104241237B (en) 2017-04-12
CN104241237A (en) 2014-12-24
SG10201403091UA (en) 2015-01-29
TW201511150A (en) 2015-03-16
JP2015002213A (en) 2015-01-05

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees