[go: up one dir, main page]

TWI563114B - Film deposition apparatus - Google Patents

Film deposition apparatus

Info

Publication number
TWI563114B
TWI563114B TW102105064A TW102105064A TWI563114B TW I563114 B TWI563114 B TW I563114B TW 102105064 A TW102105064 A TW 102105064A TW 102105064 A TW102105064 A TW 102105064A TW I563114 B TWI563114 B TW I563114B
Authority
TW
Taiwan
Prior art keywords
deposition apparatus
film deposition
film
deposition
Prior art date
Application number
TW102105064A
Other languages
English (en)
Other versions
TW201341579A (zh
Inventor
Hitoshi Kato
Shigehiro Miura
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW201341579A publication Critical patent/TW201341579A/zh
Application granted granted Critical
Publication of TWI563114B publication Critical patent/TWI563114B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45508—Radial flow
    • H10P14/00—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • C23C16/4554—Plasma being used non-continuously in between ALD reactions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5093—Coaxial electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H10P14/24—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
TW102105064A 2012-02-09 2013-02-08 Film deposition apparatus TWI563114B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012026330A JP5803714B2 (ja) 2012-02-09 2012-02-09 成膜装置

Publications (2)

Publication Number Publication Date
TW201341579A TW201341579A (zh) 2013-10-16
TWI563114B true TWI563114B (en) 2016-12-21

Family

ID=48923187

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102105064A TWI563114B (en) 2012-02-09 2013-02-08 Film deposition apparatus

Country Status (5)

Country Link
US (1) US20130206067A1 (zh)
JP (1) JP5803714B2 (zh)
KR (1) KR101561335B1 (zh)
CN (1) CN103243314B (zh)
TW (1) TWI563114B (zh)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5107185B2 (ja) * 2008-09-04 2012-12-26 東京エレクトロン株式会社 成膜装置、基板処理装置、成膜方法及びこの成膜方法を実行させるためのプログラムを記録した記録媒体
JP5445044B2 (ja) * 2008-11-14 2014-03-19 東京エレクトロン株式会社 成膜装置
JP5131240B2 (ja) * 2009-04-09 2013-01-30 東京エレクトロン株式会社 成膜装置、成膜方法及び記憶媒体
JP5423529B2 (ja) * 2010-03-29 2014-02-19 東京エレクトロン株式会社 成膜装置、成膜方法及び記憶媒体
TWI627305B (zh) * 2013-03-15 2018-06-21 Applied Materials, Inc. 用於轉盤處理室之具有剛性板的大氣蓋
JP6115244B2 (ja) * 2013-03-28 2017-04-19 東京エレクトロン株式会社 成膜装置
JP6135455B2 (ja) * 2013-10-25 2017-05-31 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
CN104746046A (zh) * 2013-12-29 2015-07-01 北京北方微电子基地设备工艺研究中心有限责任公司 原子层沉积设备
JP6262115B2 (ja) * 2014-02-10 2018-01-17 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP2015180768A (ja) 2014-03-06 2015-10-15 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法並びに記録媒体
CN103915304B (zh) * 2014-03-18 2016-08-17 京东方科技集团股份有限公司 一种等离子体刻蚀装置及干法刻蚀设备
JP6084179B2 (ja) 2014-04-09 2017-02-22 東京エレクトロン株式会社 基板処理装置および基板処理方法
JP6221932B2 (ja) * 2014-05-16 2017-11-01 東京エレクトロン株式会社 成膜装置
JP6305314B2 (ja) * 2014-10-29 2018-04-04 東京エレクトロン株式会社 成膜装置およびシャワーヘッド
JP6320903B2 (ja) 2014-11-19 2018-05-09 東京エレクトロン株式会社 ノズル及びこれを用いた基板処理装置
JP6339029B2 (ja) * 2015-01-29 2018-06-06 東京エレクトロン株式会社 成膜装置
US9963782B2 (en) * 2015-02-12 2018-05-08 Asm Ip Holding B.V. Semiconductor manufacturing apparatus
JP2016169401A (ja) * 2015-03-11 2016-09-23 株式会社トプコン スパッタリング装置
US10954597B2 (en) * 2015-03-17 2021-03-23 Asm Ip Holding B.V. Atomic layer deposition apparatus
JP5977853B1 (ja) * 2015-03-20 2016-08-24 株式会社日立国際電気 基板処理装置、半導体装置の製造方法、プログラム及び記録媒体
JP6412466B2 (ja) * 2015-06-02 2018-10-24 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP6548586B2 (ja) 2016-02-03 2019-07-24 東京エレクトロン株式会社 成膜方法
JP6733516B2 (ja) 2016-11-21 2020-08-05 東京エレクトロン株式会社 半導体装置の製造方法
TWI733021B (zh) 2017-05-15 2021-07-11 美商應用材料股份有限公司 電漿源組件、處理腔室與處理基板的方法
US10763085B2 (en) 2017-12-15 2020-09-01 Applied Materials, Inc. Shaped electrodes for improved plasma exposure from vertical plasma source
CN112538617B (zh) * 2019-09-20 2022-02-22 江苏菲沃泰纳米科技股份有限公司 镀膜设备
US11555247B2 (en) 2019-09-20 2023-01-17 Jiangsu Favored Nanotechnology Co., Ltd. Coating apparatus and movable electrode arrangement, movable support arrangement, and application thereof
TWI747281B (zh) * 2020-05-11 2021-11-21 大陸商蘇州雨竹機電有限公司 薄膜沉積旋轉盤系統
US11705312B2 (en) 2020-12-26 2023-07-18 Applied Materials, Inc. Vertically adjustable plasma source

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080026162A1 (en) * 2006-07-29 2008-01-31 Dickey Eric R Radical-enhanced atomic layer deposition system and method

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3717985A1 (de) * 1986-05-28 1987-12-03 Minolta Camera Kk Elektrochrome vorrichtung
JPH07288237A (ja) * 1994-04-15 1995-10-31 Nippon Steel Corp プラズマ励起セル装置
US5522934A (en) * 1994-04-26 1996-06-04 Tokyo Electron Limited Plasma processing apparatus using vertical gas inlets one on top of another
KR100290813B1 (ko) * 1995-08-17 2001-06-01 히가시 데쓰로 플라스마 처리장치
JP3317209B2 (ja) * 1997-08-12 2002-08-26 東京エレクトロンエイ・ティー株式会社 プラズマ処理装置及びプラズマ処理方法
JP4149051B2 (ja) * 1998-11-09 2008-09-10 東京エレクトロン株式会社 成膜装置
JP4371543B2 (ja) * 2000-06-29 2009-11-25 日本電気株式会社 リモートプラズマｃｖｄ装置及び膜形成方法
US20020185226A1 (en) * 2000-08-10 2002-12-12 Lea Leslie Michael Plasma processing apparatus
JP2002237486A (ja) * 2001-02-08 2002-08-23 Tokyo Electron Ltd プラズマ処理装置およびプラズマ処理方法
JP2004158272A (ja) * 2002-11-06 2004-06-03 Shimadzu Corp 高周波誘導結合プラズマ源および高周波誘導結合プラズマ装置
US7871490B2 (en) * 2003-03-18 2011-01-18 Top Engineering Co., Ltd. Inductively coupled plasma generation system with a parallel antenna array having evenly distributed power input and ground nodes and improved field distribution
JP2005093737A (ja) * 2003-09-17 2005-04-07 Tadahiro Omi プラズマ成膜装置，プラズマ成膜方法，半導体装置の製造方法，液晶表示装置の製造方法及び有機ｅｌ素子の製造方法
JP2005089823A (ja) * 2003-09-17 2005-04-07 Seiji Sagawa 成膜装置および成膜方法
JP4879509B2 (ja) * 2004-05-21 2012-02-22 株式会社アルバック 真空成膜装置
KR100663351B1 (ko) * 2004-11-12 2007-01-02 삼성전자주식회사 플라즈마 처리장치
US8193096B2 (en) * 2004-12-13 2012-06-05 Novellus Systems, Inc. High dose implantation strip (HDIS) in H2 base chemistry
JP2006236747A (ja) * 2005-02-24 2006-09-07 Konica Minolta Holdings Inc 透明電極及び透明電極の製造方法
WO2006118271A1 (ja) * 2005-04-28 2006-11-09 Phyzchemix Corporation エッチング方法、低誘電率誘電体膜の製造方法、多孔性部材の製造方法並びにエッチング装置及び薄膜作製装置
US20070218702A1 (en) * 2006-03-15 2007-09-20 Asm Japan K.K. Semiconductor-processing apparatus with rotating susceptor
JP2010524225A (ja) * 2007-04-02 2010-07-15 ソースル シーオー エルティディー 基板支持装置及びこれを備えるプラズマエッチング装置
JP4971930B2 (ja) * 2007-09-28 2012-07-11 東京エレクトロン株式会社 プラズマ処理装置
JP5423205B2 (ja) * 2008-08-29 2014-02-19 東京エレクトロン株式会社 成膜装置
JP5445044B2 (ja) * 2008-11-14 2014-03-19 東京エレクトロン株式会社 成膜装置
JP4621287B2 (ja) * 2009-03-11 2011-01-26 株式会社イー・エム・ディー プラズマ処理装置
US8758512B2 (en) * 2009-06-08 2014-06-24 Veeco Ald Inc. Vapor deposition reactor and method for forming thin film
JP5444961B2 (ja) * 2009-09-01 2014-03-19 東京エレクトロン株式会社 成膜装置及び成膜方法
JP5553588B2 (ja) * 2009-12-10 2014-07-16 東京エレクトロン株式会社 成膜装置
JP5392069B2 (ja) * 2009-12-25 2014-01-22 東京エレクトロン株式会社 成膜装置
JP5482196B2 (ja) * 2009-12-25 2014-04-23 東京エレクトロン株式会社 成膜装置、成膜方法及び記憶媒体
JP5327147B2 (ja) * 2009-12-25 2013-10-30 東京エレクトロン株式会社 プラズマ処理装置
JP5423529B2 (ja) * 2010-03-29 2014-02-19 東京エレクトロン株式会社 成膜装置、成膜方法及び記憶媒体
US20120021252A1 (en) * 2010-07-22 2012-01-26 Synos Technology, Inc. Treating Surface of Substrate Using Inert Gas Plasma in Atomic Layer Deposition
TW201213601A (en) * 2010-09-16 2012-04-01 Ind Tech Res Inst Apparatus and control method for plasma enhanced atomic layer deposition
JP5803706B2 (ja) * 2012-02-02 2015-11-04 東京エレクトロン株式会社 成膜装置
JP6362488B2 (ja) * 2014-09-09 2018-07-25 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080026162A1 (en) * 2006-07-29 2008-01-31 Dickey Eric R Radical-enhanced atomic layer deposition system and method

Also Published As

Publication number Publication date
CN103243314A (zh) 2013-08-14
KR20130092508A (ko) 2013-08-20
US20130206067A1 (en) 2013-08-15
CN103243314B (zh) 2015-12-09
KR101561335B1 (ko) 2015-10-16
JP2013165116A (ja) 2013-08-22
JP5803714B2 (ja) 2015-11-04
TW201341579A (zh) 2013-10-16

Similar Documents

Publication Publication Date Title
TWI563114B (en) Film deposition apparatus
EP2873694A4 (en) HART COATING FILM
GB201108156D0 (en) Apparatus
EP2758218A4 (en) DISCHARGE ASSISTANCE EQUIPMENT
GB201114594D0 (en) Apparatus
TWI560309B (en) Film deposition method
GB201105779D0 (en) Apparatus
EP2682297A4 (en) VEHICLE ACTUATING APPARATUS
GB201120321D0 (en) Apparatus
PL2807210T3 (pl) Powłoki folii
GB201222958D0 (en) Film
GB2498944B (en) Thin film formation
GB2499199B (en) Thin film formation
GB2489934B (en) Film
TWI563120B (en) Film forming apparatus
EP2921572A4 (en) DEPOSIT DEVICE
GB201222955D0 (en) Film
SG11201403305VA (en) Apparatus for forming thin film
TWI561387B (en) Film debonding apparatus
SG10201404675XA (en) Deposition apparatus
PL2675666T3 (pl) Urządzenie do mycia kół
GB201215579D0 (en) Thin film formation
GB201104046D0 (en) Apparatus
EP2727726A4 (en) COATING FILM
GB201120971D0 (en) Apparatus