TWI562685B - Plasma processing device - Google Patents

Plasma processing device

Info

Publication number: TWI562685B
Authority: TW; Taiwan
Prior art keywords: processing device; plasma processing; plasma; processing
Prior art date: 2012-04-05

Application number

TW102111673A

Other languages

English (en)

Other versions

TW201406213A (zh

Inventor

Hidetoshi Hanaoka

Original Assignee

Tokyo Electron Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2012-04-05

Filing date

2013-04-01

Publication date

2016-12-11

2013-04-01 Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd

2014-02-01 Publication of TW201406213A publication Critical patent/TW201406213A/zh

2016-12-11 Application granted granted Critical

2016-12-11 Publication of TWI562685B publication Critical patent/TWI562685B/zh

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32559—Protection means, e.g. coatings
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32018—Glow discharge
- H01J37/32027—DC powered
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32651—Shields, e.g. dark space shields, Faraday shields
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32697—Electrostatic control
- H10P50/283—

Landscapes

Engineering & Computer Science (AREA)
Chemical & Material Sciences (AREA)
Physics & Mathematics (AREA)
Plasma & Fusion (AREA)
Analytical Chemistry (AREA)
Power Engineering (AREA)
Plasma Technology (AREA)
Inorganic Chemistry (AREA)
General Chemical & Material Sciences (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Chemical Kinetics & Catalysis (AREA)
Drying Of Semiconductors (AREA)

TW102111673A 2012-04-05 2013-04-01 Plasma processing device TWI562685B (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP2012086180A JP5951324B2 (ja)	2012-04-05	2012-04-05	プラズマ処理装置

Publications (2)

Publication Number	Publication Date
TW201406213A TW201406213A (zh)	2014-02-01
TWI562685B true TWI562685B (en)	2016-12-11

Family

ID=49300602

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW102111673A TWI562685B (en)	2012-04-05	2013-04-01	Plasma processing device

Country Status (5)

Country	Link
US (2)	US9966233B2 (zh)
JP (1)	JP5951324B2 (zh)
KR (1)	KR102053792B1 (zh)
TW (1)	TWI562685B (zh)
WO (1)	WO2013151124A1 (zh)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
KR20130086806A (ko) *	2012-01-26	2013-08-05	삼성전자주식회사	박막 증착 장치
US10692690B2 (en) *	2017-03-27	2020-06-23	Kla-Tencor Corporation	Care areas for improved electron beam defect detection
JP7166147B2 (ja) *	2018-11-14	2022-11-07	東京エレクトロン株式会社	プラズマ処理装置
JP7378276B2 (ja) *	2019-11-12	2023-11-13	東京エレクトロン株式会社	プラズマ処理装置
US20210195726A1 (en) *	2019-12-12	2021-06-24	James Andrew Leskosek	Linear accelerator using a stacked array of cyclotrons
CN113808897B (zh) *	2020-06-12	2023-10-31	中微半导体设备(上海)股份有限公司	一种等离子体处理装置及其调节方法
KR102560774B1 (ko) *	2022-01-28	2023-07-27	삼성전자주식회사	기판 처리 장치 및 이를 이용한 기판 처리 방법
CN118053723A (zh) *	2022-11-09	2024-05-17	中微半导体设备(上海)股份有限公司	等离子体处理装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US6513452B2 (en) *	1994-12-15	2003-02-04	Applied Materials Inc.	Adjusting DC bias voltage in plasma chamber
CN101042991A (zh) *	2006-03-23	2007-09-26	东京毅力科创株式会社	等离子体处理装置
TW200907100A (en) *	2007-03-29	2009-02-16	Tokyo Electron Co Ltd	Plasma processing apparatus
TWI358764B (zh) *	2004-06-21	2012-02-21	Tokyo Electron Ltd

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5985033A (en) *	1997-07-11	1999-11-16	Applied Materials, Inc.	Apparatus and method for delivering a gas
JP4584572B2 (ja) *	2003-12-22	2010-11-24	株式会社日立ハイテクノロジーズ	プラズマ処理装置および処理方法
JP2005302848A (ja) *	2004-04-07	2005-10-27	Toshiba Corp	半導体製造装置および半導体製造方法
US8141514B2 (en) *	2006-03-23	2012-03-27	Tokyo Electron Limited	Plasma processing apparatus, plasma processing method, and storage medium
US8104428B2 (en) *	2006-03-23	2012-01-31	Tokyo Electron Limited	Plasma processing apparatus
US20080110567A1 (en) *	2006-11-15	2008-05-15	Miller Matthew L	Plasma confinement baffle and flow equalizer for enhanced magnetic control of plasma radial distribution
JP5165993B2 (ja) *	2007-10-18	2013-03-21	東京エレクトロン株式会社	プラズマ処理装置
JP5256866B2 (ja) *	2008-02-05	2013-08-07	東京エレクトロン株式会社	処理装置
JP5563347B2 (ja) *	2010-03-30	2014-07-30	東京エレクトロン株式会社	プラズマ処理装置及び半導体装置の製造方法
JP5759718B2 (ja) *	2010-12-27	2015-08-05	東京エレクトロン株式会社	プラズマ処理装置

2012
- 2012-04-05 JP JP2012086180A patent/JP5951324B2/ja active Active
2013
- 2013-04-01 TW TW102111673A patent/TWI562685B/zh active
- 2013-04-04 US US14/382,898 patent/US9966233B2/en active Active
- 2013-04-04 KR KR1020147025026A patent/KR102053792B1/ko active Active
- 2013-04-04 WO PCT/JP2013/060304 patent/WO2013151124A1/ja not_active Ceased
2018
- 2018-04-02 US US15/942,622 patent/US10580622B2/en active Active

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US6513452B2 (en) *	1994-12-15	2003-02-04	Applied Materials Inc.	Adjusting DC bias voltage in plasma chamber
TWI358764B (zh) *	2004-06-21	2012-02-21	Tokyo Electron Ltd
CN101042991A (zh) *	2006-03-23	2007-09-26	东京毅力科创株式会社	等离子体处理装置
TW200907100A (en) *	2007-03-29	2009-02-16	Tokyo Electron Co Ltd	Plasma processing apparatus

Also Published As

Publication number	Publication date
KR102053792B1 (ko)	2019-12-09
JP5951324B2 (ja)	2016-07-13
JP2013219100A (ja)	2013-10-24
KR20140143146A (ko)	2014-12-15
US20180294147A1 (en)	2018-10-11
US10580622B2 (en)	2020-03-03
US9966233B2 (en)	2018-05-08
TW201406213A (zh)	2014-02-01
US20150027635A1 (en)	2015-01-29
WO2013151124A1 (ja)	2013-10-10

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