TWI562487B - - Google Patents

Info

Publication number: TWI562487B
Authority: TW; Taiwan

Application number

TW103120015A

Other versions

TW201507303A (zh

Inventor

Keiji Iwata

Ippei Matsubara

Takayuki Kona

Hiroshi Watanabe

Tetsuro Toritsuka

Original Assignee

Murata Manufacturing Co

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2013-07-24

Filing date

2014-06-10

Publication date

2016-12-11

2014-06-10 Application filed by Murata Manufacturing Co filed Critical Murata Manufacturing Co

2015-02-16 Publication of TW201507303A publication Critical patent/TW201507303A/zh

2016-12-11 Application granted granted Critical

2016-12-11 Publication of TWI562487B publication Critical patent/TWI562487B/zh

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/17—Semiconductor lasers comprising special layers
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
- H01S5/18313—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation by oxidizing at least one of the DBR layers
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
- H01S5/3054—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping

Landscapes

Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Electromagnetism (AREA)
Optics & Photonics (AREA)
Semiconductor Lasers (AREA)

TW103120015A 2013-07-24 2014-06-10 垂直諧振器型面發光雷射及其製造方法 TW201507303A (zh)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP2013153412		2013-07-24
PCT/JP2014/062679 WO2015011966A1 (ja)	2013-07-24	2014-05-13	垂直共振器型面発光レーザおよびその製造方法

Publications (2)

Publication Number	Publication Date
TW201507303A TW201507303A (zh)	2015-02-16
TWI562487B true TWI562487B (zh)	2016-12-11

Family

ID=52393023

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW103120015A TW201507303A (zh)	2013-07-24	2014-06-10	垂直諧振器型面發光雷射及其製造方法

Country Status (2)

Country	Link
TW (1)	TW201507303A (zh)
WO (1)	WO2015011966A1 (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CA3072760A1 (en)	2017-08-14	2019-02-21	Trilumina Corp.	A surface-mount compatible vcsel array
US11916355B2 (en)	2017-12-28	2024-02-27	Princeton Optronics, Inc.	Narrow beam divergence semiconductor sources
DE112021001929T5 (de)	2020-03-27	2023-01-12	Sony Semiconductor Solutions Corporation	Oberflächenemittierender laser, oberflächenemittierendes laserarray, elektronische vorrichtung und verfahren zum herstellen eines oberflächenemittierenden lasers
CN115473123A (zh) *	2022-10-20	2022-12-13	中芯越州集成电路制造(绍兴)有限公司	垂直腔面发射激光器及其制作方法
CN118841827B (zh) *	2024-07-25	2025-11-28	全磊光电股份有限公司	垂直腔面发射激光器及制造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2006228959A (ja) *	2005-02-17	2006-08-31	Sony Corp	面発光半導体レーザ
TW201234585A (en) *	2010-12-21	2012-08-16	Sumitomo Chemical Co	Semiconductor substrate, method for manufacturing semiconductor substrate and vertical resonator surface light-emitting laser

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2004146515A (ja) *	2002-10-23	2004-05-20	Furukawa Electric Co Ltd:The	半導体レーザ素子
JP5272308B2 (ja) *	2004-09-21	2013-08-28	日本電気株式会社	電流狭窄構造および半導体レーザ
WO2009078232A1 (ja) *	2007-12-14	2009-06-25	Nec Corporation	面発光レーザ
JP5665504B2 (ja) *	2010-11-24	2015-02-04	キヤノン株式会社	垂直共振器型面発光レーザおよび垂直共振器型面発光レーザアレイ

2014
- 2014-05-13 WO PCT/JP2014/062679 patent/WO2015011966A1/ja not_active Ceased
- 2014-06-10 TW TW103120015A patent/TW201507303A/zh unknown

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2006228959A (ja) *	2005-02-17	2006-08-31	Sony Corp	面発光半導体レーザ
TW201234585A (en) *	2010-12-21	2012-08-16	Sumitomo Chemical Co	Semiconductor substrate, method for manufacturing semiconductor substrate and vertical resonator surface light-emitting laser

Also Published As

Publication number	Publication date
WO2015011966A1 (ja)	2015-01-29
TW201507303A (zh)	2015-02-16

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