[go: up one dir, main page]

TWI562397B - Color conversion substrate for light-emitting diode and method of fabricating the same - Google Patents

Color conversion substrate for light-emitting diode and method of fabricating the same

Info

Publication number
TWI562397B
TWI562397B TW104110994A TW104110994A TWI562397B TW I562397 B TWI562397 B TW I562397B TW 104110994 A TW104110994 A TW 104110994A TW 104110994 A TW104110994 A TW 104110994A TW I562397 B TWI562397 B TW I562397B
Authority
TW
Taiwan
Prior art keywords
fabricating
light
emitting diode
same
color conversion
Prior art date
Application number
TW104110994A
Other languages
English (en)
Other versions
TW201543713A (zh
Inventor
Kiyeon Lee
Jhee-Mann Kim
Hyung-Soo Moon
Yoon-Seuk Oh
Choon-Bong Yang
Original Assignee
Corning Prec Materials Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Corning Prec Materials Co Ltd filed Critical Corning Prec Materials Co Ltd
Publication of TW201543713A publication Critical patent/TW201543713A/zh
Application granted granted Critical
Publication of TWI562397B publication Critical patent/TWI562397B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H10W90/00—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0362—Manufacture or treatment of packages of encapsulations
TW104110994A 2014-04-04 2015-04-02 Color conversion substrate for light-emitting diode and method of fabricating the same TWI562397B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020140040300A KR101549406B1 (ko) 2014-04-04 2014-04-04 발광 다이오드의 색변환용 기판 및 그 제조방법

Publications (2)

Publication Number Publication Date
TW201543713A TW201543713A (zh) 2015-11-16
TWI562397B true TWI562397B (en) 2016-12-11

Family

ID=54240816

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104110994A TWI562397B (en) 2014-04-04 2015-04-02 Color conversion substrate for light-emitting diode and method of fabricating the same

Country Status (6)

Country Link
US (1) US10141481B2 (zh)
JP (1) JP6421951B2 (zh)
KR (1) KR101549406B1 (zh)
CN (1) CN106170873A (zh)
TW (1) TWI562397B (zh)
WO (1) WO2015152555A1 (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160012310A (ko) * 2014-07-23 2016-02-03 삼성디스플레이 주식회사 광 변환 부재의 제조 방법, 광 변환 부재, 및 그것을 포함하는 표시 장치
KR20160076002A (ko) * 2014-12-19 2016-06-30 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법
DE102019105831B4 (de) * 2019-03-07 2025-11-20 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches bauelement mit einer transparenten verbindung zwischen zwei fügepartnern und verfahren zu dessen herstellung
CN112578604B (zh) * 2020-12-26 2023-04-18 Oppo广东移动通信有限公司 显示模组及其制备方法、电子设备

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130009022A (ko) * 2011-07-14 2013-01-23 엘지이노텍 주식회사 광학 부재, 이를 포함하는 표시장치 및 이의 제조방법
KR20130121609A (ko) * 2012-04-27 2013-11-06 엘지이노텍 주식회사 광 변환 부재 및 광 변환 부재 제조 방법

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5513198A (en) * 1993-07-14 1996-04-30 Corning Incorporated Packaging of high power semiconductor lasers
JP2001307633A (ja) * 2000-04-20 2001-11-02 Mitsubishi Electric Corp フラットディスプレイパネル、フラットディスプレイ装置およびフラットディスプレイパネルの製造方法
US20050116245A1 (en) * 2003-04-16 2005-06-02 Aitken Bruce G. Hermetically sealed glass package and method of fabrication
JP2005213125A (ja) * 2004-02-02 2005-08-11 Futaba Corp 電子管と電子管の気密容器の製造方法
KR100732808B1 (ko) * 2006-01-26 2007-06-27 삼성에스디아이 주식회사 유기전계발광 표시장치의 제조방법
KR100688790B1 (ko) * 2006-01-27 2007-03-02 삼성에스디아이 주식회사 유기 전계 발광 표시장치 및 그 제조 방법
JP2007317787A (ja) * 2006-05-24 2007-12-06 Citizen Electronics Co Ltd 発光装置およびその製造方法
US20080237540A1 (en) * 2007-03-19 2008-10-02 Nanosys, Inc. Methods for encapsulating nanocrystals
KR100982991B1 (ko) * 2008-09-03 2010-09-17 삼성엘이디 주식회사 양자점 파장변환체, 양자점 파장변환체의 제조방법 및 양자점 파장변환체를 포함하는 발광장치
KR101577300B1 (ko) * 2008-10-28 2015-12-15 삼성디스플레이 주식회사 양자점을 이용한 백색광 발광다이오드 구조 및 이를 포함하는 백라이트 어셈블리
EP2348002A4 (en) * 2008-11-14 2012-04-18 Asahi Glass Co Ltd METHOD FOR PRODUCING A GLASS ELEMENT WITH A SEALING MATERIAL LAYER AND METHOD FOR PRODUCING AN ELECTRONIC DEVICE
JP2012514071A (ja) * 2008-12-30 2012-06-21 ナノシス・インク． ナノ結晶および生成された組成物をカプセル化するための方法
EP2494603A4 (en) * 2009-10-30 2018-04-11 Nanosys, Inc. Light-emitting diode (led) devices comprising nanocrystals
WO2011139751A2 (en) * 2010-04-27 2011-11-10 Ferro Corporation Hermetic sealing of glass plates
KR101295119B1 (ko) * 2010-11-10 2013-08-12 삼성전자주식회사 발광모듈
JP5649216B2 (ja) 2010-12-10 2015-01-07 パナソニック株式会社 プラズマディスプレイパネルの製造方法
JP5737011B2 (ja) * 2011-01-18 2015-06-17 日本電気硝子株式会社 発光デバイス、発光デバイス用セル及び発光デバイスの製造方法
WO2012117978A1 (ja) * 2011-02-28 2012-09-07 旭硝子株式会社 気密部材とその製造方法
CN103443941A (zh) * 2011-03-31 2013-12-11 松下电器产业株式会社 半导体发光装置
JP2013115351A (ja) * 2011-11-30 2013-06-10 Sumitomo Metal Mining Co Ltd Ｌｅｄ波長変換部材とその製造方法
EP2820686A1 (en) * 2012-02-27 2015-01-07 Corning Incorporated LOW Tg GLASS GASKET FOR HERMETIC SEALING APPLICATIONS
KR20130110946A (ko) * 2012-03-30 2013-10-10 엘지이노텍 주식회사 광학 부재 및 이를 포함하는 표시 장치
KR102093258B1 (ko) * 2012-08-06 2020-03-26 루미리즈 홀딩 비.브이. 고체 조명용의 고도로 안정된 qd들의 복합물들 및 개시제 없는 중합을 통한 그 제조 방법
JP6237989B2 (ja) * 2013-07-24 2017-11-29 日本電気硝子株式会社 電気素子パッケージの製造方法及び電気素子パッケージ
KR101555954B1 (ko) * 2014-04-01 2015-09-30 코닝정밀소재 주식회사 발광 다이오드의 색변환용 기판 및 그 제조방법

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130009022A (ko) * 2011-07-14 2013-01-23 엘지이노텍 주식회사 광학 부재, 이를 포함하는 표시장치 및 이의 제조방법
KR20130121609A (ko) * 2012-04-27 2013-11-06 엘지이노텍 주식회사 광 변환 부재 및 광 변환 부재 제조 방법

Also Published As

Publication number Publication date
US20170040511A1 (en) 2017-02-09
TW201543713A (zh) 2015-11-16
JP2017513230A (ja) 2017-05-25
KR101549406B1 (ko) 2015-09-03
JP6421951B2 (ja) 2018-11-14
US10141481B2 (en) 2018-11-27
CN106170873A (zh) 2016-11-30
WO2015152555A1 (ko) 2015-10-08

Similar Documents

Publication Publication Date Title
EP3240051A4 (en) Wavelength conversion member and method for manufacturing same
EP3168862A4 (en) Semiconductor substrate and semiconductor substrate production method
EP3149780A4 (en) Micro-light-emitting diode
EP3181657A4 (en) Organic light-emitting element
SG11201610771SA (en) Method of manufacturing a substrate
SG11201703377SA (en) Composite substrate manufacturing method and composite substrate
EP3171421A4 (en) Organic light-emitting element
KR102305711B9 (ko) 유기 발광 표시장치 및 그 밀봉방법
EP3144994A4 (en) Organic light-emitting diode and method for manufacturing same
EP3159983A4 (en) Light emitting element and method for manufacturing same
EP3217438A4 (en) Semiconductor light-emitting element
EP3144993A4 (en) Organic light-emitting element
SG10202009031VA (en) Intra-mould substrate
EP3101160A4 (en) Semiconductor substrate manufacturing method
EP3217439A4 (en) Semiconductor light-emitting element
EP3193074A4 (en) Solar spectrum-like led structure
HUE054029T2 (hu) Többrétegû alapanyag és annak gyártási eljárása
GB201410317D0 (en) Substrate
EP3276674A4 (en) Semiconductor light-emitting element
EP3136452A4 (en) Wavelength conversion member and method for manufacturing same
EP3217440A4 (en) Semiconductor light-emitting element
PL2927017T5 (pl) Sposób pokrywania substratu
EP3131128A4 (en) Method for manufacturing light emitting element and light emitting element
EP3255683A4 (en) Light-emitting element and production method for light-emitting element
TWI562397B (en) Color conversion substrate for light-emitting diode and method of fabricating the same