TWI562371B - Semiconductor device and method of manufacturing the same - Google Patents
Semiconductor device and method of manufacturing the sameInfo
- Publication number
- TWI562371B TWI562371B TW103100475A TW103100475A TWI562371B TW I562371 B TWI562371 B TW I562371B TW 103100475 A TW103100475 A TW 103100475A TW 103100475 A TW103100475 A TW 103100475A TW I562371 B TWI562371 B TW I562371B
- Authority
- TW
- Taiwan
- Prior art keywords
- manufacturing
- same
- semiconductor device
- semiconductor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW103100475A TWI562371B (en) | 2014-01-07 | 2014-01-07 | Semiconductor device and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW103100475A TWI562371B (en) | 2014-01-07 | 2014-01-07 | Semiconductor device and method of manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201528513A TW201528513A (en) | 2015-07-16 |
| TWI562371B true TWI562371B (en) | 2016-12-11 |
Family
ID=54198404
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103100475A TWI562371B (en) | 2014-01-07 | 2014-01-07 | Semiconductor device and method of manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TWI562371B (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100148253A1 (en) * | 2008-12-17 | 2010-06-17 | Vanguard International Semiconductor | High voltage semiconductor devices with schottky diodes |
| TW201110323A (en) * | 2009-09-09 | 2011-03-16 | United Microelectronics Corp | Ultra high voltage MOS tarnsistor device |
| US20120280317A1 (en) * | 2011-05-06 | 2012-11-08 | Episil Technologies Inc. | Resurf structure and ldmos device |
| TW201351651A (en) * | 2012-06-01 | 2013-12-16 | 台灣積體電路製造股份有限公司 | Semiconductor device and method of manufacturing same |
-
2014
- 2014-01-07 TW TW103100475A patent/TWI562371B/en active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100148253A1 (en) * | 2008-12-17 | 2010-06-17 | Vanguard International Semiconductor | High voltage semiconductor devices with schottky diodes |
| TW201110323A (en) * | 2009-09-09 | 2011-03-16 | United Microelectronics Corp | Ultra high voltage MOS tarnsistor device |
| US20120280317A1 (en) * | 2011-05-06 | 2012-11-08 | Episil Technologies Inc. | Resurf structure and ldmos device |
| TW201351651A (en) * | 2012-06-01 | 2013-12-16 | 台灣積體電路製造股份有限公司 | Semiconductor device and method of manufacturing same |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201528513A (en) | 2015-07-16 |
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