[go: up one dir, main page]

TWI562261B - Substrate position detecting apparatus, substrate processing apparatus using substrate position detecting apparatus, and deposition apparatus - Google Patents

Substrate position detecting apparatus, substrate processing apparatus using substrate position detecting apparatus, and deposition apparatus

Info

Publication number
TWI562261B
TWI562261B TW102147365A TW102147365A TWI562261B TW I562261 B TWI562261 B TW I562261B TW 102147365 A TW102147365 A TW 102147365A TW 102147365 A TW102147365 A TW 102147365A TW I562261 B TWI562261 B TW I562261B
Authority
TW
Taiwan
Prior art keywords
position detecting
substrate
substrate position
detecting apparatus
deposition
Prior art date
Application number
TW102147365A
Other languages
English (en)
Other versions
TW201432836A (zh
Inventor
Katsuyoshi Aikawa
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW201432836A publication Critical patent/TW201432836A/zh
Application granted granted Critical
Publication of TWI562261B publication Critical patent/TWI562261B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H10P72/0606—
    • H10P72/53—
    • H10P72/7618—
    • H10P72/7621—
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/01—Arrangements or apparatus for facilitating the optical investigation
    • G01N21/15—Preventing contamination of the components of the optical system or obstruction of the light path
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Biochemistry (AREA)
  • Analytical Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Quality & Reliability (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Theoretical Computer Science (AREA)
TW102147365A 2012-12-21 2013-12-20 Substrate position detecting apparatus, substrate processing apparatus using substrate position detecting apparatus, and deposition apparatus TWI562261B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012279911A JP6118102B2 (ja) 2012-12-21 2012-12-21 基板位置検出装置及びこれを用いた基板処理装置、成膜装置

Publications (2)

Publication Number Publication Date
TW201432836A TW201432836A (zh) 2014-08-16
TWI562261B true TWI562261B (en) 2016-12-11

Family

ID=50956044

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102147365A TWI562261B (en) 2012-12-21 2013-12-20 Substrate position detecting apparatus, substrate processing apparatus using substrate position detecting apparatus, and deposition apparatus

Country Status (5)

Country Link
US (1) US9404184B2 (zh)
JP (1) JP6118102B2 (zh)
KR (1) KR101685243B1 (zh)
CN (1) CN103887210B (zh)
TW (1) TWI562261B (zh)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9416448B2 (en) * 2008-08-29 2016-08-16 Tokyo Electron Limited Film deposition apparatus, substrate processing apparatus, film deposition method, and computer-readable storage medium for film deposition method
JP5107185B2 (ja) 2008-09-04 2012-12-26 東京エレクトロン株式会社 成膜装置、基板処理装置、成膜方法及びこの成膜方法を実行させるためのプログラムを記録した記録媒体
US9297072B2 (en) 2008-12-01 2016-03-29 Tokyo Electron Limited Film deposition apparatus
JP5640894B2 (ja) * 2011-05-26 2014-12-17 東京エレクトロン株式会社 温度測定装置、温度測定方法、記憶媒体及び熱処理装置
US10476354B2 (en) 2011-09-16 2019-11-12 Persimmon Technologies Corp. Robot drive with isolated optical encoder
WO2014157358A1 (ja) * 2013-03-28 2014-10-02 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及び記録媒体
US9111979B2 (en) * 2013-05-16 2015-08-18 Kevin P Fairbairn System and method for real time positioning of a substrate in a vacuum processing system
TWI520258B (zh) * 2013-09-27 2016-02-01 華亞科技股份有限公司 起吊裝置及自動化搬運系統
JP6262115B2 (ja) 2014-02-10 2018-01-17 東京エレクトロン株式会社 基板処理方法及び基板処理装置
BR112017015636A2 (pt) * 2015-01-20 2018-03-13 Basf Coatings Gmbh processo para produção de laminados orgânico-inorgânicos flexíveis.
CN106158694A (zh) * 2015-04-10 2016-11-23 北京北方微电子基地设备工艺研究中心有限责任公司 检测装置及半导体加工设备
KR102109375B1 (ko) * 2015-10-02 2020-05-12 주식회사 원익아이피에스 기판 얼라인 장치
JP6548586B2 (ja) 2016-02-03 2019-07-24 東京エレクトロン株式会社 成膜方法
JP6617050B2 (ja) * 2016-02-22 2019-12-04 東京エレクトロン株式会社 基板撮像装置
CN107534364B (zh) * 2016-03-21 2021-03-26 柿子技术公司 具有隔离的光学编码器的机器人驱动器
JP6537992B2 (ja) * 2016-03-30 2019-07-03 東京エレクトロン株式会社 基板処理装置、基板処理装置の制御方法、及び基板処理システム
TWI596658B (zh) * 2016-09-13 2017-08-21 漢民科技股份有限公司 防護裝置及半導體製程機台
JP6667412B2 (ja) * 2016-09-30 2020-03-18 東京エレクトロン株式会社 基板処理装置
JP2018057246A (ja) 2016-09-30 2018-04-05 キヤノン株式会社 電子機器
JP6733516B2 (ja) 2016-11-21 2020-08-05 東京エレクトロン株式会社 半導体装置の製造方法
JP6883436B2 (ja) * 2017-01-31 2021-06-09 アルファーデザイン株式会社 塗布装置、塗布方法、プログラム
JP7029914B2 (ja) * 2017-09-25 2022-03-04 東京エレクトロン株式会社 基板処理装置
JP7145648B2 (ja) * 2018-05-22 2022-10-03 東京エレクトロン株式会社 基板処理方法及び基板処理装置
KR102251936B1 (ko) * 2018-05-24 2021-05-14 (주)쎄미시스코 챔버에서의 결함 검사 시스템 및 그 방법
JP7246247B2 (ja) * 2019-05-15 2023-03-27 東京エレクトロン株式会社 基板処理装置及び監視方法
CN112309889B (zh) * 2019-08-02 2024-07-23 合肥晶合集成电路股份有限公司 一种基板检测装置及其检测方法
KR102885796B1 (ko) * 2020-04-16 2025-11-14 주식회사 제우스 기판처리장치
NL2026895B1 (en) * 2020-11-13 2022-06-30 Levitech B V Multi-chamber apparatus and method for ALD
JP7344237B2 (ja) * 2021-02-10 2023-09-13 ヤマハ発動機株式会社 無人搬送車
JP7250085B2 (ja) * 2021-09-13 2023-03-31 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法及びプログラム
JP2025017418A (ja) 2023-07-25 2025-02-06 東京エレクトロン株式会社 基板処理装置、および基板の載置方法
JP2025183774A (ja) 2024-06-05 2025-12-17 東京エレクトロン株式会社 情報処理装置、検出方法及び基板処理装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030219914A1 (en) * 2002-01-29 2003-11-27 Recif, S. A. Apparatus and process for identification of characters inscribed on a semiconductor wafer containing an orientation mark
US20080192113A1 (en) * 2001-05-28 2008-08-14 Lynx Engineering Consultants Pty Ltd. Automated wheel slide detector
TW201028496A (en) * 2008-09-04 2010-08-01 Tokyo Electron Ltd Film deposition apparatus, substrate processing apparatus, film deposition method, and computer-readable storage medium
TW201036081A (en) * 2008-11-19 2010-10-01 Tokyo Electron Ltd Substrate position detection apparatus, substrate position detection method, film deposition apparatus, film deposition method, and a computer readable storage medium
TW201234515A (en) * 2010-09-28 2012-08-16 Tokyo Electron Ltd Substrate position detection apparatus, film deposition apparatus equipped with the same, and substrate position detection method

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2568466B2 (ja) * 1991-11-01 1997-01-08 富士電子工業株式会社 プラズマｃｖｄ装置
JPH09309083A (ja) * 1996-05-27 1997-12-02 Kokusai Electric Co Ltd 搬送装置
JP2002162258A (ja) * 2000-11-27 2002-06-07 Olympus Optical Co Ltd 光学式エンコーダ
JP4756766B2 (ja) * 2001-04-23 2011-08-24 不二越機械工業株式会社 ワークの供給装置
CN101665919A (zh) * 2008-09-04 2010-03-10 东京毅力科创株式会社 成膜装置、基板处理装置、成膜方法
JP5502092B2 (ja) * 2009-09-15 2014-05-28 シャープ株式会社 蒸着方法および蒸着装置
US8883025B2 (en) * 2010-06-01 2014-11-11 Panasonic Corporation Plasma processing apparatus and plasma processing method

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080192113A1 (en) * 2001-05-28 2008-08-14 Lynx Engineering Consultants Pty Ltd. Automated wheel slide detector
US20030219914A1 (en) * 2002-01-29 2003-11-27 Recif, S. A. Apparatus and process for identification of characters inscribed on a semiconductor wafer containing an orientation mark
TW201028496A (en) * 2008-09-04 2010-08-01 Tokyo Electron Ltd Film deposition apparatus, substrate processing apparatus, film deposition method, and computer-readable storage medium
TW201036081A (en) * 2008-11-19 2010-10-01 Tokyo Electron Ltd Substrate position detection apparatus, substrate position detection method, film deposition apparatus, film deposition method, and a computer readable storage medium
TW201234515A (en) * 2010-09-28 2012-08-16 Tokyo Electron Ltd Substrate position detection apparatus, film deposition apparatus equipped with the same, and substrate position detection method

Also Published As

Publication number Publication date
US20140174351A1 (en) 2014-06-26
JP2014123673A (ja) 2014-07-03
TW201432836A (zh) 2014-08-16
US9404184B2 (en) 2016-08-02
KR20140081705A (ko) 2014-07-01
JP6118102B2 (ja) 2017-04-19
CN103887210A (zh) 2014-06-25
CN103887210B (zh) 2017-06-30
KR101685243B1 (ko) 2016-12-09

Similar Documents

Publication Publication Date Title
TWI562261B (en) Substrate position detecting apparatus, substrate processing apparatus using substrate position detecting apparatus, and deposition apparatus
TWI561672B (en) Film deposition apparatus, substrate processing apparatus and film deposition method
TWI561317B (en) Substrate cleaning apparatus and substrate processing apparatus
SG11201505064YA (en) Substrate processing apparatus
KR102002042B9 (ko) 기판 처리 장치 및 기판 처리 방법
HUE056075T2 (hu) Képfeldolgozó készülék, képfeldolgozó eljárás
SG11201402177XA (en) Substrate processing system and method
PL2574421T3 (pl) Urządzenie obróbcze
EP2757452A4 (en) INFORMATION PROCESSING DEVICE HAVING UNLOCKING FUNCTION
TWI560314B (en) Film deposition apparatus and substrate processing apparatus
TWI560310B (en) Apparatus for processing substrate
EP2755184A4 (en) OBJECT DETECTION DEVICE
EP2753154A4 (en) ANTENNA FOR PLASMA TREATMENT APPARATUS, AND PLASMA PROCESSING APPARATUS USING THE SAME
TWI560797B (en) Substrate processing apparatus
EP2671069A1 (en) Detection values processing apparatus
TWI562685B (en) Plasma processing device
EP2690606A4 (en) INVOICE PROCESSING DEVICE
EP2763108A4 (en) MONEY PROCESSING DEVICE
KR101936257B9 (ko) 기판 처리 장치
GB201417376D0 (en) Plasma processing and substrate processing system
GB201221250D0 (en) Information processing device
EP2687690A4 (en) DEVICE FOR TREATING PARTICULATE MATTER
TWI560766B (en) Substrate processing method
EP2674852A4 (en) METHOD AND DEVICE FOR BALANCED I / O PROCESSING
EP2816479A4 (en) INFORMATION PROCESSING DEVICE