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TWI562185B - Multi charged particle beam writing method, and multi charged particle beam writing apparatus - Google Patents

Multi charged particle beam writing method, and multi charged particle beam writing apparatus

Info

Publication number
TWI562185B
TWI562185B TW104116483A TW104116483A TWI562185B TW I562185 B TWI562185 B TW I562185B TW 104116483 A TW104116483 A TW 104116483A TW 104116483 A TW104116483 A TW 104116483A TW I562185 B TWI562185 B TW I562185B
Authority
TW
Taiwan
Prior art keywords
charged particle
particle beam
beam writing
multi charged
writing method
Prior art date
Application number
TW104116483A
Other languages
English (en)
Other versions
TW201611073A (zh
Inventor
Hiroshi Matsumoto
Original Assignee
Nuflare Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nuflare Technology Inc filed Critical Nuflare Technology Inc
Publication of TW201611073A publication Critical patent/TW201611073A/zh
Application granted granted Critical
Publication of TWI562185B publication Critical patent/TWI562185B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1472—Deflecting along given lines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/06—Electron sources; Electron guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control
    • H01J37/3023—Programme control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/10—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using electron beam; Record carriers therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30472—Controlling the beam
    • H01J2237/30483—Scanning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31761—Patterning strategy
    • H01J2237/31762—Computer and memory organisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31761—Patterning strategy
    • H01J2237/31766—Continuous moving of wafer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Electron Beam Exposure (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Inorganic Chemistry (AREA)
  • Plasma & Fusion (AREA)
TW104116483A 2014-06-03 2015-05-22 Multi charged particle beam writing method, and multi charged particle beam writing apparatus TWI562185B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014114526A JP6353278B2 (ja) 2014-06-03 2014-06-03 マルチ荷電粒子ビーム描画方法及びマルチ荷電粒子ビーム描画装置

Publications (2)

Publication Number Publication Date
TW201611073A TW201611073A (zh) 2016-03-16
TWI562185B true TWI562185B (en) 2016-12-11

Family

ID=54702602

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104116483A TWI562185B (en) 2014-06-03 2015-05-22 Multi charged particle beam writing method, and multi charged particle beam writing apparatus

Country Status (4)

Country Link
US (2) US9275824B2 (zh)
JP (1) JP6353278B2 (zh)
KR (1) KR101724266B1 (zh)
TW (1) TWI562185B (zh)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6353278B2 (ja) * 2014-06-03 2018-07-04 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画方法及びマルチ荷電粒子ビーム描画装置
JP6383228B2 (ja) * 2014-09-19 2018-08-29 株式会社ニューフレアテクノロジー マルチ荷電粒子ビームのビーム位置測定方法及びマルチ荷電粒子ビーム描画装置
JP6627632B2 (ja) * 2016-02-08 2020-01-08 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
US9852876B2 (en) 2016-02-08 2017-12-26 Nuflare Technology, Inc. Multi charged particle beam writing apparatus and multi charged particle beam writing method
JP6557160B2 (ja) * 2016-02-23 2019-08-07 株式会社ニューフレアテクノロジー 診断方法、荷電粒子ビーム描画装置、及びプログラム
JP6861508B2 (ja) * 2016-12-08 2021-04-21 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム露光方法及びマルチ荷電粒子ビーム露光装置
JP6720861B2 (ja) 2016-12-28 2020-07-08 株式会社ニューフレアテクノロジー マルチビーム用アパーチャセット及びマルチ荷電粒子ビーム描画装置
JP2019114748A (ja) * 2017-12-26 2019-07-11 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画方法及びマルチ荷電粒子ビーム描画装置
JP6847886B2 (ja) 2018-03-20 2021-03-24 株式会社東芝 荷電粒子ビーム偏向デバイス
JP7316127B2 (ja) * 2019-07-10 2023-07-27 株式会社ニューフレアテクノロジー マルチビーム描画方法及びマルチビーム描画装置
TWI774157B (zh) * 2019-12-27 2022-08-11 日商紐富來科技股份有限公司 帶電粒子束檢查裝置以及帶電粒子束檢查方法
JP7458817B2 (ja) * 2020-02-18 2024-04-01 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
JP7421364B2 (ja) * 2020-02-18 2024-01-24 株式会社ニューフレアテクノロジー マルチビーム描画方法及びマルチビーム描画装置
JP7604355B2 (ja) * 2021-11-22 2024-12-23 株式会社ニューフレアテクノロジー ブランキングアパーチャアレイシステム及び荷電粒子ビーム描画装置
WO2024154182A1 (ja) * 2023-01-16 2024-07-25 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置
KR102810015B1 (ko) * 2023-01-16 2025-05-21 가부시키가이샤 뉴플레어 테크놀로지 멀티 하전 입자 빔 묘화 장치

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130157198A1 (en) * 2011-12-19 2013-06-20 Nuflare Technology, Inc. Multi charged particle beam writing apparatus and multi charged particle beam writing method
TW201435513A (zh) * 2012-11-02 2014-09-16 紐富來科技股份有限公司 多荷電粒子束描繪方法及多荷電粒子束描繪裝置

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JP5095364B2 (ja) * 2007-11-26 2012-12-12 株式会社ニューフレアテクノロジー トラッキング制御方法および電子ビーム描画システム
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JP5693981B2 (ja) * 2011-01-20 2015-04-01 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP5688308B2 (ja) * 2011-02-18 2015-03-25 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
TWI477925B (zh) * 2011-10-04 2015-03-21 紐富來科技股份有限公司 Multi - beam charged particle beam mapping device and multi - beam charged particle beam rendering method
JP6653125B2 (ja) 2014-05-23 2020-02-26 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画方法及びマルチ荷電粒子ビーム描画装置
JP6353278B2 (ja) * 2014-06-03 2018-07-04 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画方法及びマルチ荷電粒子ビーム描画装置

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US20130157198A1 (en) * 2011-12-19 2013-06-20 Nuflare Technology, Inc. Multi charged particle beam writing apparatus and multi charged particle beam writing method
TW201435513A (zh) * 2012-11-02 2014-09-16 紐富來科技股份有限公司 多荷電粒子束描繪方法及多荷電粒子束描繪裝置
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Also Published As

Publication number Publication date
KR101724266B1 (ko) 2017-04-07
US20150348741A1 (en) 2015-12-03
JP2015228471A (ja) 2015-12-17
JP6353278B2 (ja) 2018-07-04
TW201611073A (zh) 2016-03-16
US9805907B2 (en) 2017-10-31
KR20150139463A (ko) 2015-12-11
US9275824B2 (en) 2016-03-01
US20160155604A1 (en) 2016-06-02

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