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TWI561934B - Resist underlayer film forming composition for lithography comprising polyether structure-containing resin - Google Patents

Resist underlayer film forming composition for lithography comprising polyether structure-containing resin

Info

Publication number
TWI561934B
TWI561934B TW100137328A TW100137328A TWI561934B TW I561934 B TWI561934 B TW I561934B TW 100137328 A TW100137328 A TW 100137328A TW 100137328 A TW100137328 A TW 100137328A TW I561934 B TWI561934 B TW I561934B
Authority
TW
Taiwan
Prior art keywords
lithography
film forming
forming composition
containing resin
underlayer film
Prior art date
Application number
TW100137328A
Other languages
English (en)
Other versions
TW201224665A (en
Inventor
Hiroaki Okuyama
Yasunobu Someya
Masakazu Kato
Tetsuya Shinjo
Keisuke Hashimoto
Original Assignee
Nissan Chemical Ind Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Chemical Ind Ltd filed Critical Nissan Chemical Ind Ltd
Publication of TW201224665A publication Critical patent/TW201224665A/zh
Application granted granted Critical
Publication of TWI561934B publication Critical patent/TWI561934B/zh

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G65/00Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule
    • C08G65/34Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule from hydroxy compounds or their metallic derivatives
    • C08G65/38Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule from hydroxy compounds or their metallic derivatives derived from phenols
    • C08G65/40Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule from hydroxy compounds or their metallic derivatives derived from phenols from phenols (I) and other compounds (II), e.g. OH-Ar-OH + X-Ar-X, where X is halogen atom, i.e. leaving group
    • C08G65/4006(I) or (II) containing elements other than carbon, oxygen, hydrogen or halogen as leaving group (X)
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G65/00Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule
    • C08G65/34Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule from hydroxy compounds or their metallic derivatives
    • C08G65/38Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule from hydroxy compounds or their metallic derivatives derived from phenols
    • C08G65/40Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule from hydroxy compounds or their metallic derivatives derived from phenols from phenols (I) and other compounds (II), e.g. OH-Ar-OH + X-Ar-X, where X is halogen atom, i.e. leaving group
    • C08G65/4012Other compound (II) containing a ketone group, e.g. X-Ar-C(=O)-Ar-X for polyetherketones
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L71/00Compositions of polyethers obtained by reactions forming an ether link in the main chain; Compositions of derivatives of such polymers
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D171/00Coating compositions based on polyethers obtained by reactions forming an ether link in the main chain; Coating compositions based on derivatives of such polymers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094Multilayer resist systems, e.g. planarising layers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2051Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/30Imagewise removal using liquid means
    • G03F7/32Liquid compositions therefor, e.g. developers
    • H10P50/691
    • H10P50/695
    • H10P76/204
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G2650/00Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule
    • C08G2650/28Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule characterised by the polymer type
    • C08G2650/38Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule characterised by the polymer type containing oxygen in addition to the ether group
    • C08G2650/40Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule characterised by the polymer type containing oxygen in addition to the ether group containing ketone groups, e.g. polyarylethylketones, PEEK or PEK
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/31504Composite [nonstructural laminate]
    • Y10T428/31942Of aldehyde or ketone condensation product

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Structural Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Architecture (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Wood Science & Technology (AREA)
  • Materials Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Toxicology (AREA)
  • Materials For Photolithography (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Polyethers (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW100137328A 2010-10-14 2011-10-14 Resist underlayer film forming composition for lithography comprising polyether structure-containing resin TWI561934B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010231217 2010-10-14

Publications (2)

Publication Number Publication Date
TW201224665A TW201224665A (en) 2012-06-16
TWI561934B true TWI561934B (en) 2016-12-11

Family

ID=45938293

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100137328A TWI561934B (en) 2010-10-14 2011-10-14 Resist underlayer film forming composition for lithography comprising polyether structure-containing resin

Country Status (5)

Country Link
US (2) US20130189533A1 (zh)
JP (1) JP5920588B2 (zh)
KR (1) KR101866828B1 (zh)
TW (1) TWI561934B (zh)
WO (1) WO2012050064A1 (zh)

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WO2013080929A1 (ja) * 2011-12-01 2013-06-06 Jsr株式会社 多層レジストプロセスに用いられるレジスト下層膜形成用組成物、レジスト下層膜及びその形成方法、並びにパターン形成方法
JP5894106B2 (ja) * 2012-06-18 2016-03-23 信越化学工業株式会社 レジスト下層膜形成用化合物、これを用いたレジスト下層膜材料、レジスト下層膜形成方法、パターン形成方法
WO2014098095A1 (ja) * 2012-12-21 2014-06-26 Jsr株式会社 重合体、樹脂組成物及び膜形成方法
KR102190384B1 (ko) * 2013-10-14 2020-12-14 삼성전자주식회사 반도체 장치의 제조 방법
KR102313101B1 (ko) 2013-12-12 2021-10-15 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 하부층용 방향족 수지
US9601325B2 (en) 2014-06-24 2017-03-21 Rohm And Haas Electronic Materials Llc Aromatic resins for underlayers
US9880469B2 (en) 2014-07-15 2018-01-30 Rohm And Haas Electronic Materials Llc Resins for underlayers
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US9508549B2 (en) 2014-12-26 2016-11-29 Dow Global Technologies Llc Methods of forming electronic devices including filling porous features with a polymer
JP6843515B2 (ja) * 2015-03-31 2021-03-17 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
US9908990B2 (en) 2015-04-17 2018-03-06 Samsung Sdi Co., Ltd. Organic layer composition, organic layer, and method of forming patterns
JP6712188B2 (ja) * 2015-07-13 2020-06-17 信越化学工業株式会社 レジスト下層膜形成用組成物及びこれを用いたパターン形成方法
KR102421597B1 (ko) * 2015-07-14 2022-07-18 에스케이이노베이션 주식회사 신규한 레지스트 하층막 형성용 중합체, 이를 포함하는 레지스트 하층막 형성용 조성물 및 이를 이용한 레지스트 패턴의 형성 방법
KR101770749B1 (ko) * 2016-01-11 2017-08-23 최상준 반사방지용 하드마스크 조성물
KR102357740B1 (ko) * 2016-03-08 2022-02-03 닛산 가가쿠 가부시키가이샤 Iii족 질화물계 화합물층을 갖는 반도체기판의 제조방법
KR102391745B1 (ko) * 2016-05-20 2022-04-28 닛산 가가쿠 가부시키가이샤 레지스트 하층막 형성 조성물
WO2018131562A1 (ja) * 2017-01-13 2018-07-19 日産化学工業株式会社 アミド溶媒を含むレジスト下層膜形成組成物
JP2020514509A (ja) * 2017-03-16 2020-05-21 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツングMerck Patent Gesellschaft mit beschraenkter Haftung リソグラフィ用組成物及びそれの使用法
WO2018186310A1 (ja) * 2017-04-03 2018-10-11 日産化学株式会社 光架橋基を有するポリエーテル樹脂を含む段差基板被覆組成物
JP6341317B2 (ja) * 2017-04-19 2018-06-13 Jsr株式会社 重合体、樹脂膜および電子部品
WO2018198960A1 (ja) 2017-04-25 2018-11-01 日産化学株式会社 フルオレン化合物を用いたレジスト下層膜形成組成物
US10741410B2 (en) * 2017-04-28 2020-08-11 Taiwan Semiconductor Manufacturing Co., Ltd. Material composition and methods thereof
SG11202004817QA (en) * 2017-12-20 2020-07-29 Merck Patent Gmbh An ethynyl derived composite, a composition comprising thereof, a method for manufacturing a coating by it, and a method for manufacturing a device comprising the coating
US11022882B2 (en) 2018-06-20 2021-06-01 Shin-Etsu Chemical Co., Ltd. Compound and composition for forming organic film
JP7272364B2 (ja) * 2018-08-09 2023-05-12 Jsr株式会社 レジスト下層膜形成用組成物、レジスト下層膜及びその形成方法、パターン形成方法並びに化合物及びその製造方法
JP6981945B2 (ja) 2018-09-13 2021-12-17 信越化学工業株式会社 パターン形成方法
KR102819027B1 (ko) * 2020-04-06 2025-06-12 동우 화인켐 주식회사 방향족 폴리에테르 폴리머 및 이를 포함하는 하드마스크 조성물
TW202222891A (zh) * 2020-07-20 2022-06-16 日商日產化學股份有限公司 Euv阻劑下層膜形成組成物
JP2024116011A (ja) 2023-02-15 2024-08-27 信越化学工業株式会社 パターン形成方法
JP2025117967A (ja) 2024-01-31 2025-08-13 信越化学工業株式会社 パターン形成方法、及び積層体
JP2025180058A (ja) 2024-05-29 2025-12-11 信越化学工業株式会社 金属含有膜パターンの形成方法

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JP2008015223A (ja) * 2006-07-06 2008-01-24 Nissan Chem Ind Ltd スルホンを含有するレジスト下層膜形成組成物

Also Published As

Publication number Publication date
US20160320704A1 (en) 2016-11-03
KR101866828B1 (ko) 2018-06-14
US9746772B2 (en) 2017-08-29
TW201224665A (en) 2012-06-16
US20130189533A1 (en) 2013-07-25
KR20130129915A (ko) 2013-11-29
JP5920588B2 (ja) 2016-05-18
JPWO2012050064A1 (ja) 2014-02-24
WO2012050064A1 (ja) 2012-04-19

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