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TWI561911B - Correcting method of euv exposure mask and euv exposure mask - Google Patents

Correcting method of euv exposure mask and euv exposure mask

Info

Publication number
TWI561911B
TWI561911B TW101110488A TW101110488A TWI561911B TW I561911 B TWI561911 B TW I561911B TW 101110488 A TW101110488 A TW 101110488A TW 101110488 A TW101110488 A TW 101110488A TW I561911 B TWI561911 B TW I561911B
Authority
TW
Taiwan
Prior art keywords
exposure mask
euv exposure
correcting method
euv
mask
Prior art date
Application number
TW101110488A
Other languages
English (en)
Other versions
TW201303484A (zh
Inventor
Matthew Joseph LAMANTIA
Original Assignee
Toppan Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toppan Printing Co Ltd filed Critical Toppan Printing Co Ltd
Publication of TW201303484A publication Critical patent/TW201303484A/zh
Application granted granted Critical
Publication of TWI561911B publication Critical patent/TWI561911B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G03F1/74—Repair or correction of mask defects by charged particle beam [CPB], e.g. focused ion beam

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW101110488A 2011-03-31 2012-03-27 Correcting method of euv exposure mask and euv exposure mask TWI561911B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011080112A JP5742389B2 (ja) 2011-03-31 2011-03-31 Ｅｕｖ露光用マスクの修正方法およびｅｕｖ露光用マスク

Publications (2)

Publication Number Publication Date
TW201303484A TW201303484A (zh) 2013-01-16
TWI561911B true TWI561911B (en) 2016-12-11

Family

ID=46930837

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101110488A TWI561911B (en) 2011-03-31 2012-03-27 Correcting method of euv exposure mask and euv exposure mask

Country Status (7)

Country Link
US (1) US9280043B2 (zh)
EP (1) EP2693458B1 (zh)
JP (1) JP5742389B2 (zh)
KR (1) KR101590240B1 (zh)
CN (1) CN103430283B (zh)
TW (1) TWI561911B (zh)
WO (1) WO2012133109A1 (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0987394A (ja) * 1995-09-27 1997-03-31 Sumitomo Chem Co Ltd オレフィン系熱可塑性エラストマーシート、該シートからなる積層体及びその用途
JP5874407B2 (ja) * 2012-01-23 2016-03-02 大日本印刷株式会社 位相欠陥の影響を低減するｅｕｖ露光用反射型マスクの製造方法
IL239577B (en) 2015-06-22 2020-10-29 Zeiss Carl Smt Gmbh Critical dimension variation correction in extreme ultraviolet lithography
WO2017084872A1 (en) * 2015-11-19 2017-05-26 Asml Netherlands B.V. Euv source chamber and gas flow regime for lithographic apparatus, multi-layer mirror and lithographic apparatus
JP6596366B2 (ja) * 2016-03-15 2019-10-23 東芝メモリ株式会社 マスク及びその製造方法
TWI712849B (zh) * 2017-02-17 2020-12-11 聯華電子股份有限公司 一種極紫外線光罩
TWI667723B (zh) * 2018-08-13 2019-08-01 台灣積體電路製造股份有限公司 微影設備之潔淨度的檢測方法以及反射式光罩
US11454877B2 (en) 2018-10-31 2022-09-27 Taiwan Semiconductor Manufacturing Co., Ltd. Extreme ultraviolet light reflective structure including nano-lattice and manufacturing method thereof
WO2023138081A1 (en) * 2022-01-21 2023-07-27 The Hong Kong University Of Science And Technology Corrugated high-resolution shadow masks

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200702898A (en) * 2005-06-15 2007-01-16 Infineon Technologies Ag EUV reflective mask and method for producing it
JP2009010373A (ja) * 2007-06-20 2009-01-15 Advanced Mask Technology Center Gmbh & Co Kg Ｅｕｖマスク及びｅｕｖマスクの修正方法
JP2010034129A (ja) * 2008-07-25 2010-02-12 Renesas Technology Corp 反射型マスクの修正方法
TW201013304A (en) * 2008-08-21 2010-04-01 Asml Holding Nv EUV reticle substrates with high thermal conductivity

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6821682B1 (en) 2000-09-26 2004-11-23 The Euv Llc Repair of localized defects in multilayer-coated reticle blanks for extreme ultraviolet lithography
US6967168B2 (en) * 2001-06-29 2005-11-22 The Euv Limited Liability Corporation Method to repair localized amplitude defects in a EUV lithography mask blank
US20040131947A1 (en) * 2003-01-07 2004-07-08 International Business Machines Corporation Reflective mask structure and method of formation
US7212282B2 (en) * 2004-02-20 2007-05-01 The Regents Of The University Of California Method for characterizing mask defects using image reconstruction from X-ray diffraction patterns
JP4482400B2 (ja) 2004-08-17 2010-06-16 エスアイアイ・ナノテクノロジー株式会社 Ｅｕｖｌマスクの多層膜中の振幅欠陥修正方法
JP2006060059A (ja) * 2004-08-20 2006-03-02 Sii Nanotechnology Inc Ｅｕｖｌマスクのブランクス欠陥修正方法
JP5155017B2 (ja) * 2008-05-29 2013-02-27 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200702898A (en) * 2005-06-15 2007-01-16 Infineon Technologies Ag EUV reflective mask and method for producing it
JP2009010373A (ja) * 2007-06-20 2009-01-15 Advanced Mask Technology Center Gmbh & Co Kg Ｅｕｖマスク及びｅｕｖマスクの修正方法
JP2010034129A (ja) * 2008-07-25 2010-02-12 Renesas Technology Corp 反射型マスクの修正方法
TW201013304A (en) * 2008-08-21 2010-04-01 Asml Holding Nv EUV reticle substrates with high thermal conductivity

Also Published As

Publication number Publication date
KR101590240B1 (ko) 2016-01-29
EP2693458A4 (en) 2014-09-10
US20130330661A1 (en) 2013-12-12
US9280043B2 (en) 2016-03-08
EP2693458B1 (en) 2016-02-03
KR20130123447A (ko) 2013-11-12
JP2012216638A (ja) 2012-11-08
JP5742389B2 (ja) 2015-07-01
CN103430283B (zh) 2016-01-20
CN103430283A (zh) 2013-12-04
WO2012133109A1 (ja) 2012-10-04
TW201303484A (zh) 2013-01-16
EP2693458A1 (en) 2014-02-05

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees