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TWI561621B - Tungsten chemical-mechanical polishing composition - Google Patents

Tungsten chemical-mechanical polishing composition

Info

Publication number
TWI561621B
TWI561621B TW104120492A TW104120492A TWI561621B TW I561621 B TWI561621 B TW I561621B TW 104120492 A TW104120492 A TW 104120492A TW 104120492 A TW104120492 A TW 104120492A TW I561621 B TWI561621 B TW I561621B
Authority
TW
Taiwan
Prior art keywords
mechanical polishing
polishing composition
tungsten chemical
tungsten
chemical
Prior art date
Application number
TW104120492A
Other languages
English (en)
Other versions
TW201612285A (en
Inventor
Lin Fu
Steven Grumbine
Jeffrey Dysard
Tina Li
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of TW201612285A publication Critical patent/TW201612285A/zh
Application granted granted Critical
Publication of TWI561621B publication Critical patent/TWI561621B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H10P52/402—
    • H10P52/403—
    • H10P95/062—
    • H10P95/064—
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
TW104120492A 2014-06-25 2015-06-25 Tungsten chemical-mechanical polishing composition TWI561621B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201462017002P 2014-06-25 2014-06-25
US201462017100P 2014-06-25 2014-06-25

Publications (2)

Publication Number Publication Date
TW201612285A TW201612285A (en) 2016-04-01
TWI561621B true TWI561621B (en) 2016-12-11

Family

ID=54929830

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104120492A TWI561621B (en) 2014-06-25 2015-06-25 Tungsten chemical-mechanical polishing composition

Country Status (8)

Country Link
US (1) US9567491B2 (zh)
EP (1) EP3161098B1 (zh)
JP (1) JP6612789B2 (zh)
KR (2) KR102511928B1 (zh)
CN (1) CN106661430B (zh)
SG (1) SG11201610330TA (zh)
TW (1) TWI561621B (zh)
WO (1) WO2015200679A1 (zh)

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KR102005963B1 (ko) * 2018-05-26 2019-07-31 에스케이이노베이션 주식회사 식각액 조성물 및 실란화합물
US10995238B2 (en) * 2018-07-03 2021-05-04 Rohm And Haas Electronic Materials Cmp Holdings Neutral to alkaline chemical mechanical polishing compositions and methods for tungsten
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CN113004800B (zh) * 2019-12-20 2024-04-12 安集微电子（上海）有限公司 一种化学机械抛光液
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CN113122141B (zh) * 2019-12-30 2024-08-02 安集微电子科技（上海）股份有限公司 一种化学机械抛光液
CN113122140B (zh) * 2019-12-30 2024-05-03 安集微电子科技（上海）股份有限公司 一种化学机械抛光液
TWI769619B (zh) * 2020-01-07 2022-07-01 美商Ｃｍｃ材料股份有限公司 經衍生的聚胺基酸
KR20210095465A (ko) * 2020-01-23 2021-08-02 삼성에스디아이 주식회사 텅스텐 패턴 웨이퍼 연마용 ｃｍｐ 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼의 연마 방법
JP7663369B2 (ja) * 2020-03-30 2025-04-16 株式会社フジミインコーポレーテッド 研磨用組成物
KR102623640B1 (ko) * 2020-07-22 2024-01-11 삼성에스디아이 주식회사 텅스텐 패턴 웨이퍼 연마용 ｃｍｐ 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼의 연마 방법
TWI877406B (zh) 2020-09-25 2025-03-21 日商福吉米股份有限公司 化學機械研磨漿料、化學機械研磨組合物、用於研磨表面的方法、及緩衝金屬氧化物鹽的方法
JP7803675B2 (ja) * 2020-10-05 2026-01-21 花王株式会社 酸化珪素膜用研磨液組成物
KR102678848B1 (ko) * 2020-10-14 2024-06-26 삼성에스디아이 주식회사 텅스텐 패턴 웨이퍼 연마용 cmp 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼의 연마 방법
WO2022140081A1 (en) * 2020-12-21 2022-06-30 Fujifilm Electronic Materials U.S.A., Inc. Chemical mechanical polishing compositions and methods of use thereof
EP4263734A4 (en) * 2020-12-21 2025-02-12 FUJIFILM Electronic Materials U.S.A, Inc. CHEMICAL-MECHANICAL POLISHING COMPOSITIONS AND METHODS OF USE THEREOF
CN113604154B (zh) * 2021-07-09 2022-07-12 万华化学集团电子材料有限公司 一种钨插塞化学机械抛光液、制备方法及其应用
KR102638622B1 (ko) 2021-07-22 2024-02-19 에스케이엔펄스 주식회사 반도체 공정용 연마 조성물 및 연마 조성물을 적용한 반도체 소자의 제조 방법
WO2023007722A1 (ja) * 2021-07-30 2023-02-02 昭和電工マテリアルズ株式会社 研磨液及び研磨方法
WO2023171290A1 (ja) * 2022-03-08 2023-09-14 株式会社フジミインコーポレーテッド 研磨用組成物
JP2025509849A (ja) * 2022-03-18 2025-04-11 バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー アミノ－ポリオルガノシロキサン－被覆研磨材を使用する化学機械平坦化
KR20250069933A (ko) * 2022-09-22 2025-05-20 씨엠씨 머티리얼즈 엘엘씨 황 함유 음이온성 계면활성제를 포함하는 텅스텐 cmp 조성물
KR20250059910A (ko) * 2023-10-25 2025-05-07 에스케이엔펄스 주식회사 반도체 공정용 연마 조성물 및 이를 이용한 기판의 제조방법
WO2025195821A1 (en) * 2024-03-20 2025-09-25 Evonik Operations Gmbh Method for improved selective etching of silicon nitride over silicon oxide

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Also Published As

Publication number Publication date
JP6612789B2 (ja) 2019-11-27
SG11201610330TA (en) 2017-01-27
US20150376462A1 (en) 2015-12-31
EP3161098A4 (en) 2018-07-11
KR20230003286A (ko) 2023-01-05
CN106661430B (zh) 2019-03-19
KR102511928B1 (ko) 2023-03-20
CN106661430A (zh) 2017-05-10
WO2015200679A1 (en) 2015-12-30
EP3161098A1 (en) 2017-05-03
EP3161098B1 (en) 2022-10-26
KR102732305B1 (ko) 2024-11-21
JP2017524767A (ja) 2017-08-31
US9567491B2 (en) 2017-02-14
TW201612285A (en) 2016-04-01
KR20170026491A (ko) 2017-03-08

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