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TWI561672B - Film deposition apparatus, substrate processing apparatus and film deposition method - Google Patents

Film deposition apparatus, substrate processing apparatus and film deposition method

Info

Publication number
TWI561672B
TWI561672B TW102121026A TW102121026A TWI561672B TW I561672 B TWI561672 B TW I561672B TW 102121026 A TW102121026 A TW 102121026A TW 102121026 A TW102121026 A TW 102121026A TW I561672 B TWI561672 B TW I561672B
Authority
TW
Taiwan
Prior art keywords
film deposition
substrate processing
processing apparatus
deposition method
film
Prior art date
Application number
TW102121026A
Other languages
English (en)
Other versions
TW201413048A (zh
Inventor
Jun Yamawaku
Chishio Koshimizu
Mitsuhiro Tachibana
Hitoshi Kato
Takeshi Kobayashi
Shigehiro Miura
Takafumi Kimura
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW201413048A publication Critical patent/TW201413048A/zh
Application granted granted Critical
Publication of TWI561672B publication Critical patent/TWI561672B/zh

Links

Classifications

    • H10P14/00—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45519—Inert gas curtains
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • C23C16/4554—Plasma being used non-continuously in between ALD reactions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • H10P14/6336—
    • H10P14/6339—
    • H10P14/6532—
    • H10P14/6905—
    • H10P14/69215—
    • H10P14/69433—
    • H10P72/7618—
    • H10P72/7621—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
TW102121026A 2012-06-15 2013-06-14 Film deposition apparatus, substrate processing apparatus and film deposition method TWI561672B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012136176 2012-06-15
JP2012272300 2012-12-13
JP2013066665A JP6011417B2 (ja) 2012-06-15 2013-03-27 成膜装置、基板処理装置及び成膜方法

Publications (2)

Publication Number Publication Date
TW201413048A TW201413048A (zh) 2014-04-01
TWI561672B true TWI561672B (en) 2016-12-11

Family

ID=49756277

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102121026A TWI561672B (en) 2012-06-15 2013-06-14 Film deposition apparatus, substrate processing apparatus and film deposition method

Country Status (4)

Country Link
US (1) US9111747B2 (zh)
JP (1) JP6011417B2 (zh)
KR (1) KR101794380B1 (zh)
TW (1) TWI561672B (zh)

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JP6115244B2 (ja) * 2013-03-28 2017-04-19 東京エレクトロン株式会社 成膜装置
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JP6262115B2 (ja) 2014-02-10 2018-01-17 東京エレクトロン株式会社 基板処理方法及び基板処理装置
WO2015179081A1 (en) 2014-05-21 2015-11-26 Applied Materials, Inc. Thermal processing susceptor
JP6345104B2 (ja) * 2014-12-24 2018-06-20 東京エレクトロン株式会社 成膜方法
KR101651352B1 (ko) * 2015-03-12 2016-08-30 한양대학교 에리카산학협력단 증착장비
US9829790B2 (en) * 2015-06-08 2017-11-28 Applied Materials, Inc. Immersion field guided exposure and post-exposure bake process
JP6735549B2 (ja) * 2015-11-04 2020-08-05 東京エレクトロン株式会社 基板処理装置、基板処理方法及びリング状部材
WO2017100630A1 (en) * 2015-12-10 2017-06-15 Applied Materials, Inc. In-situ film annealing with spatial atomic layer deposition
US10428425B2 (en) * 2016-01-26 2019-10-01 Tokyo Electron Limited Film deposition apparatus, method of depositing film, and non-transitory computer-readable recording medium
JP2017139297A (ja) * 2016-02-02 2017-08-10 東京エレクトロン株式会社 成膜方法及び成膜装置
JP6548586B2 (ja) 2016-02-03 2019-07-24 東京エレクトロン株式会社 成膜方法
JP6584355B2 (ja) * 2016-03-29 2019-10-02 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
WO2017183402A1 (ja) * 2016-04-21 2017-10-26 三益半導体工業株式会社 回転テーブル用非接触電力供給機構及び方法並びにウェーハ回転保持装置
JP6733516B2 (ja) 2016-11-21 2020-08-05 東京エレクトロン株式会社 半導体装置の製造方法
JP6564802B2 (ja) * 2017-03-22 2019-08-21 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法およびプログラム
JP6918554B2 (ja) * 2017-04-06 2021-08-11 東京エレクトロン株式会社 可動体構造及び成膜装置
JP6817883B2 (ja) * 2017-04-25 2021-01-20 東京エレクトロン株式会社 成膜方法
JP6863107B2 (ja) * 2017-06-13 2021-04-21 東京エレクトロン株式会社 成膜装置、成膜装置のクリーニング方法及び記憶媒体
TWI793218B (zh) * 2017-12-16 2023-02-21 美商應用材料股份有限公司 使用低頻偏壓作介電膜的幾何選擇性沉積的處理腔室及方法
CN111466017B (zh) * 2017-12-21 2023-10-20 东京毅力科创株式会社 基板支承构件、基板处理装置以及基板输送装置
JP6971887B2 (ja) * 2018-03-02 2021-11-24 東京エレクトロン株式会社 成膜方法及び成膜装置
US11078763B2 (en) 2018-08-10 2021-08-03 Gr Energy Services Management, Lp Downhole perforating tool with integrated detonation assembly and method of using same
US10858919B2 (en) 2018-08-10 2020-12-08 Gr Energy Services Management, Lp Quick-locking detonation assembly of a downhole perforating tool and method of using same
US11994008B2 (en) 2018-08-10 2024-05-28 Gr Energy Services Management, Lp Loaded perforating gun with plunging charge assembly and method of using same
JP7200880B2 (ja) * 2019-08-19 2023-01-10 東京エレクトロン株式会社 成膜方法及び成膜装置
JP7241646B2 (ja) * 2019-08-30 2023-03-17 京セラ株式会社 ヒータ及びヒータシステム
JP7279605B2 (ja) * 2019-09-27 2023-05-23 東京エレクトロン株式会社 成膜装置及び成膜装置の運用方法
KR102856220B1 (ko) * 2020-01-31 2025-09-09 주성엔지니어링(주) 기판처리장치 및 기판처리방법
JP2022047890A (ja) * 2020-09-14 2022-03-25 株式会社シンクロン 給電装置
JP7017832B1 (ja) * 2021-06-08 2022-02-09 株式会社シンクロン バイアス印加装置
CN114931708A (zh) * 2022-05-20 2022-08-23 天力能大健康科技(广州)有限公司 一种通过频率转换驱动细胞钠钾位转移的生物共振芯片
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Also Published As

Publication number Publication date
US9111747B2 (en) 2015-08-18
JP6011417B2 (ja) 2016-10-19
KR20130141397A (ko) 2013-12-26
JP2014135464A (ja) 2014-07-24
US20130337635A1 (en) 2013-12-19
TW201413048A (zh) 2014-04-01
KR101794380B1 (ko) 2017-11-06

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