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TWI561669B - Method of controlling gas supply apparatus and substrate processing system - Google Patents

Method of controlling gas supply apparatus and substrate processing system

Info

Publication number
TWI561669B
TWI561669B TW103111565A TW103111565A TWI561669B TW I561669 B TWI561669 B TW I561669B TW 103111565 A TW103111565 A TW 103111565A TW 103111565 A TW103111565 A TW 103111565A TW I561669 B TWI561669 B TW I561669B
Authority
TW
Taiwan
Prior art keywords
processing system
gas supply
substrate processing
supply apparatus
controlling gas
Prior art date
Application number
TW103111565A
Other languages
English (en)
Other versions
TW201447026A (zh
Inventor
Shigeru Nakajima
Hiromi Shima
Yusuke Tachino
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW201447026A publication Critical patent/TW201447026A/zh
Application granted granted Critical
Publication of TWI561669B publication Critical patent/TWI561669B/zh

Links

Classifications

    • H10P14/6329—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H10P14/6334—
    • H10P72/0431—
    • H10W72/07231—

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
TW103111565A 2013-03-28 2014-03-27 Method of controlling gas supply apparatus and substrate processing system TWI561669B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013069973A JP6017359B2 (ja) 2013-03-28 2013-03-28 ガス供給装置の制御方法および基板処理システム

Publications (2)

Publication Number Publication Date
TW201447026A TW201447026A (zh) 2014-12-16
TWI561669B true TWI561669B (en) 2016-12-11

Family

ID=51595375

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103111565A TWI561669B (en) 2013-03-28 2014-03-27 Method of controlling gas supply apparatus and substrate processing system

Country Status (5)

Country Link
US (1) US9758867B2 (zh)
JP (1) JP6017359B2 (zh)
KR (1) KR101710750B1 (zh)
CN (1) CN104073781B (zh)
TW (1) TWI561669B (zh)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6376982B2 (ja) * 2015-02-05 2018-08-22 東京エレクトロン株式会社 原料タンクのガス抜き方法および成膜装置
JP6627474B2 (ja) * 2015-09-30 2020-01-08 東京エレクトロン株式会社 原料ガス供給装置、原料ガス供給方法及び記憶媒体
CN109715851B (zh) * 2016-08-05 2021-07-09 株式会社堀场Stec 气体控制系统、具备该气体控制系统的成膜装置、检测方法以及存储介质
CN109321895B (zh) * 2017-07-31 2023-06-16 北京北方华创微电子装备有限公司 一种用于ald工艺的气体传输装置及其进气方法
JP6774972B2 (ja) 2018-02-08 2020-10-28 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法およびプログラム
US11393703B2 (en) * 2018-06-18 2022-07-19 Applied Materials, Inc. Apparatus and method for controlling a flow process material to a deposition chamber
CN111058012B (zh) * 2018-10-17 2023-03-21 北京北方华创微电子装备有限公司 进气装置及半导体加工设备
JP7281285B2 (ja) 2019-01-28 2023-05-25 株式会社堀場エステック 濃度制御装置、及び、ゼロ点調整方法、濃度制御装置用プログラム
US20230002900A1 (en) * 2019-12-16 2023-01-05 Fujikin Incorporated Vaporization supply method and vaporization supply device
CN113025994A (zh) * 2021-03-04 2021-06-25 横店集团东磁股份有限公司 一种炉管清洁方法
US20240091823A1 (en) * 2022-09-20 2024-03-21 Applied Materials, Inc. Fluid vapor mixing and delivery system

Citations (2)

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TW200425220A (en) * 2002-07-10 2004-11-16 Tokyo Electron Ltd Film-formation apparatus and source supplying apparatus thereof and gas concentration measuring method
CN102102195A (zh) * 2009-12-16 2011-06-22 周星工程股份有限公司 薄膜沉积系统和薄膜沉积方法

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US4844006A (en) * 1988-03-07 1989-07-04 Akzo America Inc. Apparatus to provide a vaporized reactant for chemical-vapor deposition
JPH05291144A (ja) * 1992-02-13 1993-11-05 Ryoden Semiconductor Syst Eng Kk 化学気相成長装置及びその気化器
JPH06349743A (ja) 1993-06-08 1994-12-22 Ryoden Semiconductor Syst Eng Kk 化学気相成長装置
US5492724A (en) * 1994-02-22 1996-02-20 Osram Sylvania Inc. Method for the controlled delivery of vaporized chemical precursor to an LPCVD reactor
JPH07302764A (ja) * 1994-04-28 1995-11-14 Sony Corp Ｉｉ−ｖｉ族化合物半導体の成長方法
KR100273474B1 (ko) 1998-09-14 2000-12-15 이경수 화학기상 증착장치의 가스 공급장치와 그 제어방법
JP2000306907A (ja) 1999-04-26 2000-11-02 Sony Corp 液体ソース装置
US6179925B1 (en) 1999-05-14 2001-01-30 Applied Materials, Inc. Method and apparatus for improved control of process and purge material in substrate processing system
KR100332313B1 (ko) 2000-06-24 2002-04-12 서성기 Ａｌｄ 박막증착장치 및 증착방법
JP2002289531A (ja) * 2001-03-23 2002-10-04 Ricoh Co Ltd 原料ガス供給装置および原料ガス供給方法および薄膜形成装置およびエピタキシャル成長装置
US6701066B2 (en) * 2001-10-11 2004-03-02 Micron Technology, Inc. Delivery of solid chemical precursors
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JP5513767B2 (ja) * 2008-06-25 2014-06-04 株式会社日立国際電気 半導体装置の製造方法、基板処理方法、基板処理装置および半導体装置
JP2012062502A (ja) * 2010-09-14 2012-03-29 Hitachi Kokusai Electric Inc 半導体装置の製造方法及び基板処理装置
JP2012172171A (ja) * 2011-02-18 2012-09-10 Hitachi Kokusai Electric Inc 基板処理装置及び薄膜成膜方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200425220A (en) * 2002-07-10 2004-11-16 Tokyo Electron Ltd Film-formation apparatus and source supplying apparatus thereof and gas concentration measuring method
CN102102195A (zh) * 2009-12-16 2011-06-22 周星工程股份有限公司 薄膜沉积系统和薄膜沉积方法

Also Published As

Publication number Publication date
TW201447026A (zh) 2014-12-16
JP2014194964A (ja) 2014-10-09
KR101710750B1 (ko) 2017-02-27
US9758867B2 (en) 2017-09-12
US20140290577A1 (en) 2014-10-02
CN104073781A (zh) 2014-10-01
CN104073781B (zh) 2018-11-23
JP6017359B2 (ja) 2016-10-26
KR20140118789A (ko) 2014-10-08

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