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TWI561490B - Oxide sintered compact and method of manufacturing the same, target, transparent conductive film obtained by using the same, and transparent conductive substrate - Google Patents

Oxide sintered compact and method of manufacturing the same, target, transparent conductive film obtained by using the same, and transparent conductive substrate

Info

Publication number
TWI561490B
TWI561490B TW104118687A TW104118687A TWI561490B TW I561490 B TWI561490 B TW I561490B TW 104118687 A TW104118687 A TW 104118687A TW 104118687 A TW104118687 A TW 104118687A TW I561490 B TWI561490 B TW I561490B
Authority
TW
Taiwan
Prior art keywords
same
transparent conductive
target
manufacturing
film obtained
Prior art date
Application number
TW104118687A
Other languages
English (en)
Other versions
TW201544485A (zh
Inventor
Tokuyuki Nakayama
Yoshiyuki Abe
Original Assignee
Sumitomo Metal Mining Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Metal Mining Co filed Critical Sumitomo Metal Mining Co
Publication of TW201544485A publication Critical patent/TW201544485A/zh
Application granted granted Critical
Publication of TWI561490B publication Critical patent/TWI561490B/zh

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    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C03C17/23—Oxides
    • C03C17/245—Oxides by deposition from the vapour phase
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
    • H01B1/08—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances oxides
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    • C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
    • C04B2235/3229—Cerium oxides or oxide-forming salts thereof
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  • Chemical & Material Sciences (AREA)
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  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Ceramic Engineering (AREA)
  • Structural Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Geochemistry & Mineralogy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Physical Vapour Deposition (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Non-Insulated Conductors (AREA)
  • Manufacturing Of Electric Cables (AREA)
TW104118687A 2007-07-06 2008-07-04 Oxide sintered compact and method of manufacturing the same, target, transparent conductive film obtained by using the same, and transparent conductive substrate TWI561490B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007178879 2007-07-06

Publications (2)

Publication Number Publication Date
TW201544485A TW201544485A (zh) 2015-12-01
TWI561490B true TWI561490B (en) 2016-12-11

Family

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Family Applications (3)

Application Number Title Priority Date Filing Date
TW103103868A TWI500590B (zh) 2007-07-06 2008-07-04 氧化物燒結體及其製造方法、靶及使用其所得之透明導電膜以及透明導電性基材
TW104118687A TWI561490B (en) 2007-07-06 2008-07-04 Oxide sintered compact and method of manufacturing the same, target, transparent conductive film obtained by using the same, and transparent conductive substrate
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Families Citing this family (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3248666B2 (ja) 1995-12-22 2002-01-21 オムロン株式会社 データ処理システム
JP4816116B2 (ja) * 2006-02-08 2011-11-16 住友金属鉱山株式会社 スパッタリングターゲット用酸化物焼結体および、それを用いて得られる酸化物膜、それを含む透明基材
CN103030381B (zh) * 2007-07-06 2015-05-27 住友金属矿山株式会社 氧化物烧结体及其制造方法、靶、使用该靶得到的透明导电膜以及透明导电性基材
JPWO2010032422A1 (ja) * 2008-09-19 2012-02-02 出光興産株式会社 酸化物焼結体及びスパッタリングターゲット
JP5621764B2 (ja) * 2009-03-13 2014-11-12 住友金属鉱山株式会社 透明導電膜と透明導電膜積層体及びその製造方法、並びにシリコン系薄膜太陽電池
TWI395336B (zh) * 2009-06-09 2013-05-01 Nat Univ Chung Hsing Optoelectronic semiconductors, conductors, insulators and their design methods with multiple high entropy alloy oxides
JP4571221B1 (ja) * 2009-06-22 2010-10-27 富士フイルム株式会社 Ｉｇｚｏ系酸化物材料及びｉｇｚｏ系酸化物材料の製造方法
KR101768833B1 (ko) * 2009-08-05 2017-08-16 스미토모 긴조쿠 고잔 가부시키가이샤 산화물 소결물체와 그 제조 방법, 타겟 및 투명 도전막
KR20110047308A (ko) * 2009-10-30 2011-05-09 삼성코닝정밀소재 주식회사 산화인듐주석 스퍼터링 타겟 및 이를 이용하여 제조되는 투명전도막
JP5257372B2 (ja) * 2009-11-30 2013-08-07 住友金属鉱山株式会社 酸化物蒸着材と透明導電膜および太陽電池
JP4968318B2 (ja) * 2009-12-22 2012-07-04 住友金属鉱山株式会社 酸化物蒸着材
JP5437825B2 (ja) * 2010-01-15 2014-03-12 出光興産株式会社 Ｉｎ−Ｇａ−Ｏ系酸化物焼結体、ターゲット、酸化物半導体薄膜及びこれらの製造方法
WO2011152048A1 (ja) * 2010-06-02 2011-12-08 出光興産株式会社 スパッタリングターゲット
JP5206716B2 (ja) * 2010-03-23 2013-06-12 住友電気工業株式会社 Ｉｎ−Ｇａ−Ｚｎ系複合酸化物焼結体およびその製造方法
JP5224073B2 (ja) * 2010-03-26 2013-07-03 住友金属鉱山株式会社 酸化物蒸着材とその製造方法
CN102433532B (zh) * 2010-09-29 2016-08-10 三菱综合材料株式会社 薄膜形成用气相沉积材、具备该薄膜的薄膜片材和层压片材
JP5764828B2 (ja) * 2011-02-04 2015-08-19 住友金属鉱山株式会社 酸化物焼結体およびそれを加工したタブレット
DE102011012034A1 (de) * 2011-02-22 2012-08-23 Heraeus Materials Technology Gmbh & Co. Kg Rohrförmiges Sputtertarget
JP5762204B2 (ja) * 2011-03-22 2015-08-12 出光興産株式会社 スパッタリングターゲット、酸化物半導体薄膜及びそれらの製造方法
KR20140041675A (ko) * 2011-07-06 2014-04-04 이데미쓰 고산 가부시키가이샤 스퍼터링 타겟
CN102351515A (zh) * 2011-07-13 2012-02-15 清华大学 一种In-Ga-O基氧化物热电陶瓷材料及其制备方法
JP5301021B2 (ja) * 2011-09-06 2013-09-25 出光興産株式会社 スパッタリングターゲット
JP5925535B2 (ja) * 2012-03-12 2016-05-25 三井金属鉱業株式会社 ガリウム・インジウム複合酸化物粉末
US9224820B2 (en) * 2012-05-31 2015-12-29 Samsung Corning Advanced Glass, Llc Oxide semiconductor sputtering target, method of manufacturing thin-film transistors using the same, and thin film transistor manufactured using the same
US9885108B2 (en) * 2012-08-07 2018-02-06 Semiconductor Energy Laboratory Co., Ltd. Method for forming sputtering target
US20140309099A1 (en) 2013-04-15 2014-10-16 Ppg Industries Ohio, Inc. Low iron, high redox ratio, and high iron, high redox ratio, soda-lime-silica glasses and methods of making same
US11261122B2 (en) 2013-04-15 2022-03-01 Vitro Flat Glass Llc Low iron, high redox ratio, and high iron, high redox ratio, soda-lime-silica glasses and methods of making same
CN108962724A (zh) * 2013-07-16 2018-12-07 住友金属矿山株式会社 氧化物半导体薄膜和薄膜晶体管
JP6064895B2 (ja) * 2013-12-27 2017-01-25 住友金属鉱山株式会社 酸化インジウム系酸化物焼結体およびその製造方法
CN105873881A (zh) * 2013-12-27 2016-08-17 出光兴产株式会社 氧化物烧结体、该烧结体的制造方法及溅射靶
KR101861459B1 (ko) * 2014-03-14 2018-05-28 스미토모 긴조쿠 고잔 가부시키가이샤 산화물 소결체, 스퍼터링용 타겟 및 그것을 이용하여 얻어지는 산화물 반도체 박막
WO2015159916A1 (ja) * 2014-04-17 2015-10-22 住友金属鉱山株式会社 酸化物焼結体、スパッタリング用ターゲット、及びそれを用いて得られる酸化物半導体薄膜
JP6376215B2 (ja) * 2014-05-23 2018-08-22 住友金属鉱山株式会社 酸化物焼結体、スパッタリング用ターゲット、及びそれを用いて得られる酸化物半導体薄膜
KR20170024579A (ko) * 2014-06-26 2017-03-07 스미토모 긴조쿠 고잔 가부시키가이샤 산화물 소결체, 스퍼터링용 타겟 및 그것을 이용하여 얻어지는 산화물 반도체 박막
TWI677438B (zh) * 2014-07-29 2019-11-21 日商凸版印刷股份有限公司 積層體及其製造方法、以及阻氣性薄膜及其製造方法
US20160155803A1 (en) * 2014-11-28 2016-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor Device, Method for Manufacturing the Semiconductor Device, and Display Device Including the Semiconductor Device
JP6709171B2 (ja) * 2014-12-09 2020-06-10 リンテック株式会社 透明導電膜及び透明導電膜の製造方法
JP2017154910A (ja) * 2016-02-29 2017-09-07 住友金属鉱山株式会社 酸化物焼結体及びスパッタリング用ターゲット
US11728390B2 (en) 2017-02-01 2023-08-15 Idemitsu Kosan Co., Ltd. Oxide semiconductor film, thin film transistor, oxide sintered body, and sputtering target
GB201705755D0 (en) 2017-04-10 2017-05-24 Norwegian Univ Of Science And Tech (Ntnu) Nanostructure
KR102035899B1 (ko) * 2017-08-04 2019-11-26 한양대학교 산학협력단 Igo 박막의 제조 방법, 및 igo 박막 트랜지스터
JP7053290B2 (ja) * 2018-02-05 2022-04-12 株式会社神戸製鋼所 有機ｅｌディスプレイ用の反射アノード電極
JP6724057B2 (ja) * 2018-03-30 2020-07-15 Ｊｘ金属株式会社 スパッタリングターゲット部材
CN112335058B (zh) * 2018-06-21 2024-03-08 株式会社爱发科 氧化物半导体薄膜、薄膜晶体管及其制造方法、以及溅射靶材
WO2020138319A1 (ja) * 2018-12-28 2020-07-02 出光興産株式会社 焼結体
CN114008237B (zh) * 2019-06-28 2024-06-25 株式会社爱发科 溅射靶及溅射靶的制造方法
US12365616B2 (en) 2020-02-03 2025-07-22 Vitro Flat Glass Llc Soda lime silica glass with high visible light transmittance
JPWO2023189834A1 (zh) 2022-03-29 2023-10-05
KR102908479B1 (ko) * 2024-01-11 2026-01-06 케이브이머티리얼즈 주식회사 산화물 스퍼터링 타겟, 투명 전도성 산화물 박막 및 이를 포함하는 태양전지
CN119287318B (zh) * 2024-10-09 2025-09-26 许昌恒昊光学科技有限公司 一种蓝光吸收型复合稀土镀膜材料及其制备方法
KR102828505B1 (ko) * 2024-12-31 2025-07-02 케이브이머티리얼즈 주식회사 산화물의 스퍼터링용 타겟 제조방법 및 투명 전도성 산화물 박막 형성방법

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200614278A (en) * 2004-06-07 2006-05-01 Sumitomo Metal Mining Co Transparent conductive film, sintered target for production of transparent conductive film, transparent conductive base material and display device utilizing the same

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1006248A (en) 1911-07-13 1911-10-17 Frank P Martin Pipe-mold.
US5407602A (en) * 1993-10-27 1995-04-18 At&T Corp. Transparent conductors comprising gallium-indium-oxide
US5473456A (en) * 1993-10-27 1995-12-05 At&T Corp. Method for growing transparent conductive gallium-indium-oxide films by sputtering
JPH0950711A (ja) 1995-08-03 1997-02-18 Kobe Steel Ltd 透明導電膜
JPH09259640A (ja) * 1996-03-25 1997-10-03 Uchitsugu Minami 透明導電膜
JPH1025567A (ja) * 1996-07-11 1998-01-27 Sumitomo Bakelite Co Ltd 複合ターゲット
JP3364488B1 (ja) * 2001-07-05 2003-01-08 東京エレクトロン株式会社 反応容器のクリーニング方法及び成膜装置
EP2264211B1 (en) 2001-08-02 2012-02-15 Idemitsu Kosan Co., Ltd. Sputtering target
US20040222089A1 (en) * 2001-09-27 2004-11-11 Kazuyoshi Inoue Sputtering target and transparent electroconductive film
JP2006022373A (ja) * 2004-07-07 2006-01-26 Sumitomo Metal Mining Co Ltd 透明導電性薄膜作製用スパッタリングターゲットの製造方法
TWI417905B (zh) * 2004-09-13 2013-12-01 住友金屬鑛山股份有限公司 A transparent conductive film and a method for manufacturing the same, and a transparent conductive substrate and a light-emitting device
JP4475209B2 (ja) * 2005-09-22 2010-06-09 住友金属鉱山株式会社 蒸着用酸化物燒結体タブレット
WO2007037313A1 (ja) * 2005-09-28 2007-04-05 Nec Corporation 窓ガラスおよびウインドウフィルム
JP4687374B2 (ja) * 2005-10-18 2011-05-25 住友金属鉱山株式会社 透明導電膜及びそれを含む透明導電性基材
JP4816116B2 (ja) * 2006-02-08 2011-11-16 住友金属鉱山株式会社 スパッタリングターゲット用酸化物焼結体および、それを用いて得られる酸化物膜、それを含む透明基材
JP4816137B2 (ja) * 2006-02-24 2011-11-16 住友金属鉱山株式会社 透明導電膜及び透明導電性基材
CN103030381B (zh) * 2007-07-06 2015-05-27 住友金属矿山株式会社 氧化物烧结体及其制造方法、靶、使用该靶得到的透明导电膜以及透明导电性基材
CN101960625B (zh) * 2008-03-06 2013-01-23 住友金属矿山株式会社 半导体发光元件、该半导体发光元件的制造方法以及使用该半导体发光元件的灯
JP5348132B2 (ja) * 2008-04-16 2013-11-20 住友金属鉱山株式会社 薄膜トランジスタ型基板、薄膜トランジスタ型液晶表示装置および薄膜トランジスタ型基板の製造方法
JP5288142B2 (ja) * 2008-06-06 2013-09-11 出光興産株式会社 酸化物薄膜用スパッタリングターゲットおよびその製造法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200614278A (en) * 2004-06-07 2006-05-01 Sumitomo Metal Mining Co Transparent conductive film, sintered target for production of transparent conductive film, transparent conductive base material and display device utilizing the same

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