TWI560873B - Bipolar junction transistor - Google Patents
Bipolar junction transistorInfo
- Publication number
- TWI560873B TWI560873B TW105113784A TW105113784A TWI560873B TW I560873 B TWI560873 B TW I560873B TW 105113784 A TW105113784 A TW 105113784A TW 105113784 A TW105113784 A TW 105113784A TW I560873 B TWI560873 B TW I560873B
- Authority
- TW
- Taiwan
- Prior art keywords
- bipolar junction
- junction transistor
- transistor
- bipolar
- junction
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
- H10D64/231—Emitter or collector electrodes for bipolar transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/281—Base electrodes for bipolar transistors
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW105113784A TWI560873B (en) | 2016-05-04 | 2016-05-04 | Bipolar junction transistor |
| CN201610883072.4A CN107346784A (en) | 2016-05-04 | 2016-10-10 | Bipolar junction transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW105113784A TWI560873B (en) | 2016-05-04 | 2016-05-04 | Bipolar junction transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TWI560873B true TWI560873B (en) | 2016-12-01 |
| TW201740569A TW201740569A (en) | 2017-11-16 |
Family
ID=58227202
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW105113784A TWI560873B (en) | 2016-05-04 | 2016-05-04 | Bipolar junction transistor |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN107346784A (en) |
| TW (1) | TWI560873B (en) |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100431167C (en) * | 2005-09-09 | 2008-11-05 | 联华电子股份有限公司 | Bipolar junction transistor and manufacturing method thereof |
| TWI474481B (en) * | 2010-01-13 | 2015-02-21 | Macronix Int Co Ltd | High gain constant β bipolar junction transistor and manufacturing method thereof |
| CN103107185B (en) * | 2011-11-11 | 2015-04-08 | 上海华虹宏力半导体制造有限公司 | Germanium-silicon power heterojunction bipolar transistor (HBT), manufacturing method thereof and germanium-silicon power HBT multi-pointing device |
| CN103378139B (en) * | 2012-04-20 | 2016-02-03 | 旺宏电子股份有限公司 | Semiconductor structure and fabrication method thereof |
| EP2746799B1 (en) * | 2012-12-20 | 2016-04-20 | Nxp B.V. | Semiconductor magnetic field sensors |
| US9590039B2 (en) * | 2013-12-20 | 2017-03-07 | United Microelectronics Corp. | Semiconductor structure and method for forming the same |
-
2016
- 2016-05-04 TW TW105113784A patent/TWI560873B/en active
- 2016-10-10 CN CN201610883072.4A patent/CN107346784A/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| TW201740569A (en) | 2017-11-16 |
| CN107346784A (en) | 2017-11-14 |
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