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TWI560792B - - Google Patents

Info

Publication number
TWI560792B
TWI560792B TW104103395A TW104103395A TWI560792B TW I560792 B TWI560792 B TW I560792B TW 104103395 A TW104103395 A TW 104103395A TW 104103395 A TW104103395 A TW 104103395A TW I560792 B TWI560792 B TW I560792B
Authority
TW
Taiwan
Application number
TW104103395A
Other versions
TW201603160A (zh
Inventor
Motoshi Sawada
Original Assignee
Hitachi Int Electric Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Int Electric Inc filed Critical Hitachi Int Electric Inc
Publication of TW201603160A publication Critical patent/TW201603160A/zh
Application granted granted Critical
Publication of TWI560792B publication Critical patent/TWI560792B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
TW104103395A 2014-07-04 2015-02-02 基板處理裝置、半導體裝置之製造方法及程式 TW201603160A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014138719A JP6001015B2 (ja) 2014-07-04 2014-07-04 基板処理装置、半導体装置の製造方法、プログラムおよび記録媒体

Publications (2)

Publication Number Publication Date
TW201603160A TW201603160A (zh) 2016-01-16
TWI560792B true TWI560792B (zh) 2016-12-01

Family

ID=55016609

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104103395A TW201603160A (zh) 2014-07-04 2015-02-02 基板處理裝置、半導體裝置之製造方法及程式

Country Status (5)

Country Link
US (1) US9869022B2 (zh)
JP (1) JP6001015B2 (zh)
KR (1) KR101669752B1 (zh)
CN (1) CN105280482B (zh)
TW (1) TW201603160A (zh)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6560924B2 (ja) * 2015-07-29 2019-08-14 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法及びプログラム
CN108292603B (zh) 2016-01-06 2022-06-28 东芝三菱电机产业系统株式会社 气体供给装置
JP6368732B2 (ja) * 2016-03-29 2018-08-01 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及びプログラム
JP6664047B2 (ja) * 2016-03-31 2020-03-13 株式会社昭和真空 成膜装置及び成膜方法
TWI649446B (zh) * 2017-03-15 2019-02-01 漢民科技股份有限公司 應用於半導體設備之可拆卸式噴氣裝置
JP2018186235A (ja) * 2017-04-27 2018-11-22 東京エレクトロン株式会社 基板処理装置、インジェクタ内のパーティクル除去方法及び基板処理方法
US11031215B2 (en) * 2018-09-28 2021-06-08 Lam Research Corporation Vacuum pump protection against deposition byproduct buildup
FI129609B (en) 2020-01-10 2022-05-31 Picosun Oy Substrate processing apparatus
TWI895326B (zh) * 2020-02-28 2025-09-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 專用於零件清潔的系統
KR20230085072A (ko) * 2021-12-06 2023-06-13 에이에스엠 아이피 홀딩 비.브이. 반도체 처리 툴용 반응물 증기 전달 시스템 및 방법
JP2023161122A (ja) * 2022-04-25 2023-11-07 キオクシア株式会社 成膜装置及び成膜方法
JP7671724B2 (ja) * 2022-09-15 2025-05-02 株式会社Kokusai Electric 基板処理装置、基板処理方法、半導体装置を製造する方法及びプログラム

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200625387A (en) * 2005-01-12 2006-07-16 Boc Inc System for cleaning a surface using cryogenic aerosol and fluid reactant
TW201413042A (zh) * 2012-08-23 2014-04-01 Applied Materials Inc 用於清洗紫外線腔室的方法與硬體
TW201438139A (zh) * 2013-01-31 2014-10-01 東京威力科創股份有限公司 載置台及電漿處理裝置
TW201443970A (zh) * 2013-01-17 2014-11-16 Tokyo Electron Ltd 電漿處理裝置及電漿處理裝置之運轉方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0799321A (ja) * 1993-05-27 1995-04-11 Sony Corp 薄膜半導体素子の製造方法および製造装置
JP4222707B2 (ja) * 2000-03-24 2009-02-12 東京エレクトロン株式会社 プラズマ処理装置及び方法、ガス供給リング及び誘電体
JP2004197207A (ja) 2002-12-20 2004-07-15 Matsushita Electric Ind Co Ltd 薄膜形成装置
US7273526B2 (en) * 2004-04-15 2007-09-25 Asm Japan K.K. Thin-film deposition apparatus
JP5280861B2 (ja) 2006-01-19 2013-09-04 エーエスエム アメリカ インコーポレイテッド 高温ａｌｄインレットマニホールド
JP5219562B2 (ja) * 2007-04-02 2013-06-26 株式会社日立国際電気 基板処理装置、基板処理方法及び半導体装置の製造方法
JP5028142B2 (ja) 2007-05-17 2012-09-19 キヤノンアネルバ株式会社 クライオトラップ
US8869742B2 (en) * 2010-08-04 2014-10-28 Lam Research Corporation Plasma processing chamber with dual axial gas injection and exhaust
JP6119408B2 (ja) * 2013-05-09 2017-04-26 ソニー株式会社 原子層堆積装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200625387A (en) * 2005-01-12 2006-07-16 Boc Inc System for cleaning a surface using cryogenic aerosol and fluid reactant
TW201413042A (zh) * 2012-08-23 2014-04-01 Applied Materials Inc 用於清洗紫外線腔室的方法與硬體
TW201443970A (zh) * 2013-01-17 2014-11-16 Tokyo Electron Ltd 電漿處理裝置及電漿處理裝置之運轉方法
TW201438139A (zh) * 2013-01-31 2014-10-01 東京威力科創股份有限公司 載置台及電漿處理裝置

Also Published As

Publication number Publication date
JP2016017186A (ja) 2016-02-01
TW201603160A (zh) 2016-01-16
KR20160004904A (ko) 2016-01-13
US20160002787A1 (en) 2016-01-07
CN105280482B (zh) 2018-02-13
KR101669752B1 (ko) 2016-11-09
CN105280482A (zh) 2016-01-27
US9869022B2 (en) 2018-01-16
JP6001015B2 (ja) 2016-10-05

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