TWI560781B - Method for fabricating thin film transistor and apparatus thereof - Google Patents
Method for fabricating thin film transistor and apparatus thereofInfo
- Publication number
- TWI560781B TWI560781B TW103131192A TW103131192A TWI560781B TW I560781 B TWI560781 B TW I560781B TW 103131192 A TW103131192 A TW 103131192A TW 103131192 A TW103131192 A TW 103131192A TW I560781 B TWI560781 B TW I560781B
- Authority
- TW
- Taiwan
- Prior art keywords
- thin film
- film transistor
- fabricating thin
- fabricating
- transistor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H10P14/203—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
- H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
- H01L21/441—Deposition of conductive or insulating materials for electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
-
- H10P72/04—
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Thin Film Transistor (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW103131192A TWI560781B (en) | 2014-09-10 | 2014-09-10 | Method for fabricating thin film transistor and apparatus thereof |
| CN201410787296.6A CN104485283B (zh) | 2014-09-10 | 2014-12-17 | 薄膜晶体管的制造方法及制造薄膜晶体管的设备 |
| US14/622,929 US20160071961A1 (en) | 2014-09-10 | 2015-02-16 | Method for fabricating thin film transistor and apparatus thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW103131192A TWI560781B (en) | 2014-09-10 | 2014-09-10 | Method for fabricating thin film transistor and apparatus thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201611123A TW201611123A (zh) | 2016-03-16 |
| TWI560781B true TWI560781B (en) | 2016-12-01 |
Family
ID=52759819
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103131192A TWI560781B (en) | 2014-09-10 | 2014-09-10 | Method for fabricating thin film transistor and apparatus thereof |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20160071961A1 (zh) |
| CN (1) | CN104485283B (zh) |
| TW (1) | TWI560781B (zh) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105428247B (zh) * | 2016-01-18 | 2018-08-10 | 青岛大学 | 一种基于水性超薄ZrO2高k介电层的薄膜晶体管制备方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200933944A (en) * | 2007-09-26 | 2009-08-01 | Idemitsu Kosan Co | Organic thin film transistor |
| TW201118956A (en) * | 2009-07-17 | 2011-06-01 | Semiconductor Energy Lab | Method of manufacturing semiconductor device |
| TW201220504A (en) * | 2010-11-05 | 2012-05-16 | Univ Nat Chiao Tung | Metal oxide thin film transistor and manufacturing method thereof |
| TW201339182A (zh) * | 2012-02-07 | 2013-10-01 | Polyera Corp | 可光固化聚合材料及相關電子裝置 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5972428A (en) * | 1996-03-05 | 1999-10-26 | Symetrix Corporation | Methods and apparatus for material deposition using primer |
| US5972430A (en) * | 1997-11-26 | 1999-10-26 | Advanced Technology Materials, Inc. | Digital chemical vapor deposition (CVD) method for forming a multi-component oxide layer |
| US6187133B1 (en) * | 1998-05-29 | 2001-02-13 | Applied Materials, Inc. | Gas manifold for uniform gas distribution and photochemistry |
| US6416730B1 (en) * | 1998-09-16 | 2002-07-09 | Cabot Corporation | Methods to partially reduce a niobium metal oxide oxygen reduced niobium oxides |
| US6322912B1 (en) * | 1998-09-16 | 2001-11-27 | Cabot Corporation | Electrolytic capacitor anode of valve metal oxide |
| JP2002043299A (ja) * | 2000-07-19 | 2002-02-08 | Tokyo Electron Ltd | 被処理体の熱処理方法 |
| TWI642113B (zh) * | 2008-08-08 | 2018-11-21 | 半導體能源研究所股份有限公司 | 半導體裝置的製造方法 |
| WO2011055856A1 (ja) * | 2009-11-05 | 2011-05-12 | 住友金属鉱山株式会社 | 透明導電膜の製造方法及び透明導電膜、それを用いた素子、透明導電基板並びにそれを用いたデバイス |
| WO2012090891A1 (ja) * | 2010-12-27 | 2012-07-05 | パナソニック株式会社 | 電界効果トランジスタおよびその製造方法 |
| JP5929132B2 (ja) * | 2011-11-30 | 2016-06-01 | 株式会社リコー | 金属酸化物薄膜形成用塗布液、金属酸化物薄膜の製造方法、及び電界効果型トランジスタの製造方法 |
| CN103779425B (zh) * | 2014-01-27 | 2016-04-06 | 上海交通大学 | 一种铟镓锌氧化物半导体薄膜和铟镓锌氧化物tft制备方法 |
| CN104009093B (zh) * | 2014-06-13 | 2016-08-31 | 青岛大学 | 一种高k介电层水性氧化铟薄膜晶体管的制备方法 |
-
2014
- 2014-09-10 TW TW103131192A patent/TWI560781B/zh active
- 2014-12-17 CN CN201410787296.6A patent/CN104485283B/zh active Active
-
2015
- 2015-02-16 US US14/622,929 patent/US20160071961A1/en not_active Abandoned
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200933944A (en) * | 2007-09-26 | 2009-08-01 | Idemitsu Kosan Co | Organic thin film transistor |
| TW201118956A (en) * | 2009-07-17 | 2011-06-01 | Semiconductor Energy Lab | Method of manufacturing semiconductor device |
| TW201220504A (en) * | 2010-11-05 | 2012-05-16 | Univ Nat Chiao Tung | Metal oxide thin film transistor and manufacturing method thereof |
| TW201339182A (zh) * | 2012-02-07 | 2013-10-01 | Polyera Corp | 可光固化聚合材料及相關電子裝置 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201611123A (zh) | 2016-03-16 |
| CN104485283A (zh) | 2015-04-01 |
| CN104485283B (zh) | 2017-08-15 |
| US20160071961A1 (en) | 2016-03-10 |
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