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TWI560781B - Method for fabricating thin film transistor and apparatus thereof - Google Patents

Method for fabricating thin film transistor and apparatus thereof

Info

Publication number
TWI560781B
TWI560781B TW103131192A TW103131192A TWI560781B TW I560781 B TWI560781 B TW I560781B TW 103131192 A TW103131192 A TW 103131192A TW 103131192 A TW103131192 A TW 103131192A TW I560781 B TWI560781 B TW I560781B
Authority
TW
Taiwan
Prior art keywords
thin film
film transistor
fabricating thin
fabricating
transistor
Prior art date
Application number
TW103131192A
Other languages
English (en)
Other versions
TW201611123A (zh
Inventor
Liang Yu Lin
Chun Cheng Cheng
Original Assignee
Au Optronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Au Optronics Corp filed Critical Au Optronics Corp
Priority to TW103131192A priority Critical patent/TWI560781B/zh
Priority to CN201410787296.6A priority patent/CN104485283B/zh
Priority to US14/622,929 priority patent/US20160071961A1/en
Publication of TW201611123A publication Critical patent/TW201611123A/zh
Application granted granted Critical
Publication of TWI560781B publication Critical patent/TWI560781B/zh

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • H10P14/203
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/44Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
    • H01L21/441Deposition of conductive or insulating materials for electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10P72/04

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
TW103131192A 2014-09-10 2014-09-10 Method for fabricating thin film transistor and apparatus thereof TWI560781B (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
TW103131192A TWI560781B (en) 2014-09-10 2014-09-10 Method for fabricating thin film transistor and apparatus thereof
CN201410787296.6A CN104485283B (zh) 2014-09-10 2014-12-17 薄膜晶体管的制造方法及制造薄膜晶体管的设备
US14/622,929 US20160071961A1 (en) 2014-09-10 2015-02-16 Method for fabricating thin film transistor and apparatus thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW103131192A TWI560781B (en) 2014-09-10 2014-09-10 Method for fabricating thin film transistor and apparatus thereof

Publications (2)

Publication Number Publication Date
TW201611123A TW201611123A (zh) 2016-03-16
TWI560781B true TWI560781B (en) 2016-12-01

Family

ID=52759819

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103131192A TWI560781B (en) 2014-09-10 2014-09-10 Method for fabricating thin film transistor and apparatus thereof

Country Status (3)

Country Link
US (1) US20160071961A1 (zh)
CN (1) CN104485283B (zh)
TW (1) TWI560781B (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105428247B (zh) * 2016-01-18 2018-08-10 青岛大学 一种基于水性超薄ZrO2高k介电层的薄膜晶体管制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200933944A (en) * 2007-09-26 2009-08-01 Idemitsu Kosan Co Organic thin film transistor
TW201118956A (en) * 2009-07-17 2011-06-01 Semiconductor Energy Lab Method of manufacturing semiconductor device
TW201220504A (en) * 2010-11-05 2012-05-16 Univ Nat Chiao Tung Metal oxide thin film transistor and manufacturing method thereof
TW201339182A (zh) * 2012-02-07 2013-10-01 Polyera Corp 可光固化聚合材料及相關電子裝置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5972428A (en) * 1996-03-05 1999-10-26 Symetrix Corporation Methods and apparatus for material deposition using primer
US5972430A (en) * 1997-11-26 1999-10-26 Advanced Technology Materials, Inc. Digital chemical vapor deposition (CVD) method for forming a multi-component oxide layer
US6187133B1 (en) * 1998-05-29 2001-02-13 Applied Materials, Inc. Gas manifold for uniform gas distribution and photochemistry
US6416730B1 (en) * 1998-09-16 2002-07-09 Cabot Corporation Methods to partially reduce a niobium metal oxide oxygen reduced niobium oxides
US6322912B1 (en) * 1998-09-16 2001-11-27 Cabot Corporation Electrolytic capacitor anode of valve metal oxide
JP2002043299A (ja) * 2000-07-19 2002-02-08 Tokyo Electron Ltd 被処理体の熱処理方法
TWI642113B (zh) * 2008-08-08 2018-11-21 半導體能源研究所股份有限公司 半導體裝置的製造方法
WO2011055856A1 (ja) * 2009-11-05 2011-05-12 住友金属鉱山株式会社 透明導電膜の製造方法及び透明導電膜、それを用いた素子、透明導電基板並びにそれを用いたデバイス
WO2012090891A1 (ja) * 2010-12-27 2012-07-05 パナソニック株式会社 電界効果トランジスタおよびその製造方法
JP5929132B2 (ja) * 2011-11-30 2016-06-01 株式会社リコー 金属酸化物薄膜形成用塗布液、金属酸化物薄膜の製造方法、及び電界効果型トランジスタの製造方法
CN103779425B (zh) * 2014-01-27 2016-04-06 上海交通大学 一种铟镓锌氧化物半导体薄膜和铟镓锌氧化物tft制备方法
CN104009093B (zh) * 2014-06-13 2016-08-31 青岛大学 一种高k介电层水性氧化铟薄膜晶体管的制备方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200933944A (en) * 2007-09-26 2009-08-01 Idemitsu Kosan Co Organic thin film transistor
TW201118956A (en) * 2009-07-17 2011-06-01 Semiconductor Energy Lab Method of manufacturing semiconductor device
TW201220504A (en) * 2010-11-05 2012-05-16 Univ Nat Chiao Tung Metal oxide thin film transistor and manufacturing method thereof
TW201339182A (zh) * 2012-02-07 2013-10-01 Polyera Corp 可光固化聚合材料及相關電子裝置

Also Published As

Publication number Publication date
TW201611123A (zh) 2016-03-16
CN104485283A (zh) 2015-04-01
CN104485283B (zh) 2017-08-15
US20160071961A1 (en) 2016-03-10

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