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TWI560771B - - Google Patents

Info

Publication number
TWI560771B
TWI560771B TW102109163A TW102109163A TWI560771B TW I560771 B TWI560771 B TW I560771B TW 102109163 A TW102109163 A TW 102109163A TW 102109163 A TW102109163 A TW 102109163A TW I560771 B TWI560771 B TW I560771B
Authority
TW
Taiwan
Application number
TW102109163A
Other versions
TW201401368A (zh
Inventor
Hideyuki Hatoh
Hiroyuki Ogawa
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW201401368A publication Critical patent/TW201401368A/zh
Application granted granted Critical
Publication of TWI560771B publication Critical patent/TWI560771B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/50—Devices controlled by mechanical forces, e.g. pressure
    • H10P50/242—
    • H10P50/244—
    • H10P74/238—
    • H10W20/023—
    • H10W20/0245—
    • H10W20/2125—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/8593—Systems
    • Y10T137/87571—Multiple inlet with single outlet
    • Y10T137/87676—With flow control
    • Y10T137/87684—Valve in each inlet

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW102109163A 2012-03-16 2013-03-15 半導體製造裝置之氣體供給方法、氣體供給系統以及半導體製造裝置 TW201401368A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012060636A JP5937385B2 (ja) 2012-03-16 2012-03-16 半導体製造装置のガス供給方法、ガス供給システム及び半導体製造装置

Publications (2)

Publication Number Publication Date
TW201401368A TW201401368A (zh) 2014-01-01
TWI560771B true TWI560771B (zh) 2016-12-01

Family

ID=49161061

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102109163A TW201401368A (zh) 2012-03-16 2013-03-15 半導體製造裝置之氣體供給方法、氣體供給系統以及半導體製造裝置

Country Status (5)

Country Link
US (1) US9460895B2 (zh)
JP (1) JP5937385B2 (zh)
KR (1) KR102039759B1 (zh)
TW (1) TW201401368A (zh)
WO (1) WO2013137152A1 (zh)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140287593A1 (en) * 2013-03-21 2014-09-25 Applied Materials, Inc. High throughput multi-layer stack deposition
CN110137069B (zh) * 2013-12-30 2021-07-09 中微半导体设备(上海)股份有限公司 一种控制反应气体进入真空反应腔的方法
JP6158111B2 (ja) * 2014-02-12 2017-07-05 東京エレクトロン株式会社 ガス供給方法及び半導体製造装置
TW201539623A (zh) * 2014-03-26 2015-10-16 Hitachi Int Electric Inc 基板處理裝置、半導體裝置的製造方法及記錄媒體
KR20160012302A (ko) * 2014-07-23 2016-02-03 삼성전자주식회사 기판 제조 방법 및 그에 사용되는 기판 제조 장치
JP6324870B2 (ja) 2014-10-08 2018-05-16 東京エレクトロン株式会社 ガス供給機構及び半導体製造装置
GB201420935D0 (en) 2014-11-25 2015-01-07 Spts Technologies Ltd Plasma etching apparatus
JP6516666B2 (ja) * 2015-04-08 2019-05-22 東京エレクトロン株式会社 ガス供給制御方法
JP6546874B2 (ja) 2016-04-13 2019-07-17 東京エレクトロン株式会社 ガス供給機構及び半導体製造システム
GB201608926D0 (en) * 2016-05-20 2016-07-06 Spts Technologies Ltd Method for plasma etching a workpiece
JP7037397B2 (ja) * 2018-03-16 2022-03-16 キオクシア株式会社 基板処理装置、基板処理方法、および半導体装置の製造方法
JP7296699B2 (ja) * 2018-07-02 2023-06-23 東京エレクトロン株式会社 ガス供給システム、プラズマ処理装置およびガス供給システムの制御方法
JP7514245B2 (ja) * 2019-01-31 2024-07-10 ラム リサーチ コーポレーション 急速交互プロセスにおいて均一性を向上させるためのマルチロケーションガス注入
SG11202112502UA (en) * 2019-05-10 2021-12-30 Fabworx Solutions Inc Gas capacitor for semiconductor tool
JP7068230B2 (ja) * 2019-05-22 2022-05-16 東京エレクトロン株式会社 基板処理方法
CN114429903A (zh) * 2022-01-20 2022-05-03 长鑫存储技术有限公司 一种半导体结构及其形成方法、制造装置
CN121312312A (zh) * 2023-10-24 2026-01-09 东京毅力科创株式会社 等离子体蚀刻装置和等离子体蚀刻方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080078505A1 (en) * 2006-10-03 2008-04-03 Naoyuki Kofuji Plasma etching apparatus and plasma etching method
US20120037316A1 (en) * 2010-08-12 2012-02-16 Tokyo Electron Limited Method of supplying etching gas and etching apparatus

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6050923A (ja) 1983-08-31 1985-03-22 Hitachi Ltd プラズマ表面処理方法
JPH0473287A (ja) 1990-07-11 1992-03-09 Mitsubishi Electric Corp 抄紙機の制御装置
JP2917897B2 (ja) * 1996-03-29 1999-07-12 日本電気株式会社 半導体装置の製造方法
US7708859B2 (en) * 2004-04-30 2010-05-04 Lam Research Corporation Gas distribution system having fast gas switching capabilities
US20070066038A1 (en) * 2004-04-30 2007-03-22 Lam Research Corporation Fast gas switching plasma processing apparatus
JP2008210952A (ja) * 2007-02-26 2008-09-11 Sanyo Electric Co Ltd 半導体装置の製造方法、シリコンインターポーザの製造方法および半導体モジュールの製造方法
JP2009130108A (ja) * 2007-11-22 2009-06-11 Hitachi Kokusai Electric Inc 基板処理装置及び半導体装置の製造方法
JP5226438B2 (ja) * 2008-09-10 2013-07-03 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及び基板処理方法
US8574447B2 (en) * 2010-03-31 2013-11-05 Lam Research Corporation Inorganic rapid alternating process for silicon etch
JP2012023221A (ja) * 2010-07-15 2012-02-02 Hitachi Kokusai Electric Inc 半導体デバイスの製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080078505A1 (en) * 2006-10-03 2008-04-03 Naoyuki Kofuji Plasma etching apparatus and plasma etching method
US20120037316A1 (en) * 2010-08-12 2012-02-16 Tokyo Electron Limited Method of supplying etching gas and etching apparatus

Also Published As

Publication number Publication date
JP2013197183A (ja) 2013-09-30
KR20140134265A (ko) 2014-11-21
US9460895B2 (en) 2016-10-04
JP5937385B2 (ja) 2016-06-22
TW201401368A (zh) 2014-01-01
US20140361102A1 (en) 2014-12-11
WO2013137152A1 (ja) 2013-09-19
KR102039759B1 (ko) 2019-11-01

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