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TWI560741B - Method for metal gate surface clean - Google Patents

Method for metal gate surface clean

Info

Publication number
TWI560741B
TWI560741B TW103145898A TW103145898A TWI560741B TW I560741 B TWI560741 B TW I560741B TW 103145898 A TW103145898 A TW 103145898A TW 103145898 A TW103145898 A TW 103145898A TW I560741 B TWI560741 B TW I560741B
Authority
TW
Taiwan
Prior art keywords
metal gate
surface clean
gate surface
clean
metal
Prior art date
Application number
TW103145898A
Other languages
English (en)
Other versions
TW201543536A (zh
Inventor
Shich Chang Suen
Li Chieh Wu
Chi Jen Liu
He Hui Peng
liang guang Chen
Yung Chung Chen
Original Assignee
Taiwan Semiconductor Mfg Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg Co Ltd filed Critical Taiwan Semiconductor Mfg Co Ltd
Publication of TW201543536A publication Critical patent/TW201543536A/zh
Application granted granted Critical
Publication of TWI560741B publication Critical patent/TWI560741B/zh

Links

Classifications

    • H10P70/27—
    • H10D64/01316—
    • H10D64/01328—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures
    • H10P14/46—
    • H10P14/6532—
    • H10P50/282—
    • H10P50/283—
    • H10P70/234—
    • H10W20/056—
    • H10W20/0698—
    • H10W20/076—
    • H10W20/081—
    • H10W20/082—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/017—Manufacture or treatment using dummy gates in processes wherein at least parts of the final gates are self-aligned to the dummy gates, i.e. replacement gate processes
TW103145898A 2014-01-10 2014-12-27 Method for metal gate surface clean TWI560741B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US14/152,497 US9269585B2 (en) 2014-01-10 2014-01-10 Method for cleaning metal gate surface

Publications (2)

Publication Number Publication Date
TW201543536A TW201543536A (zh) 2015-11-16
TWI560741B true TWI560741B (en) 2016-12-01

Family

ID=53484828

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103145898A TWI560741B (en) 2014-01-10 2014-12-27 Method for metal gate surface clean

Country Status (3)

Country Link
US (5) US9269585B2 (zh)
DE (1) DE102014119164B4 (zh)
TW (1) TWI560741B (zh)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9269585B2 (en) 2014-01-10 2016-02-23 Taiwan Semiconductor Manufacturing Company, Ltd. Method for cleaning metal gate surface
KR102238257B1 (ko) * 2014-08-26 2021-04-13 삼성전자주식회사 반도체 소자의 제조 방법
US9478626B2 (en) 2014-12-19 2016-10-25 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with an interconnect structure and method for forming the same
US10090396B2 (en) * 2015-07-20 2018-10-02 Taiwan Semiconductor Manufacturing Company, Ltd. Method for fabricating metal gate devices and resulting structures
KR102326090B1 (ko) * 2015-10-16 2021-11-12 삼성전자주식회사 반도체 장치 및 그 제조 방법
US9633999B1 (en) 2015-11-16 2017-04-25 Taiwan Semiconductor Manufacturing Company, Ltd. Method and structure for semiconductor mid-end-of-line (MEOL) process
US9679807B1 (en) * 2015-11-20 2017-06-13 Globalfoundries Inc. Method, apparatus, and system for MOL interconnects without titanium liner
US10354913B2 (en) * 2017-05-31 2019-07-16 Taiwan Semiconductor Manufacturing Company, Ltd. Chemical clean of semiconductor device
US11410880B2 (en) * 2019-04-23 2022-08-09 Taiwan Semiconductor Manufacturing Company, Ltd. Phase control in contact formation
US11488859B2 (en) * 2019-12-27 2022-11-01 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US11189525B2 (en) * 2020-02-21 2021-11-30 Taiwan Semiconductor Manufacturing Company, Ltd. Via-first process for connecting a contact and a gate electrode
US20250266257A1 (en) * 2024-02-15 2025-08-21 Applied Materials, Inc. Cyclic growth processes

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US5269880A (en) * 1992-04-03 1993-12-14 Northern Telecom Limited Tapering sidewalls of via holes
US5972804A (en) * 1997-08-05 1999-10-26 Motorola, Inc. Process for forming a semiconductor device
US6001716A (en) * 1998-05-22 1999-12-14 United Silicon Incorporated Fabricating method of a metal gate
US20130043516A1 (en) * 2011-08-16 2013-02-21 Semiconductor Manufacturing International (Beijing) Corporation Semiconductor Device and Manufacturing Method Thereof

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US3814992A (en) * 1972-06-22 1974-06-04 Ibm High performance fet
US6015724A (en) 1995-11-02 2000-01-18 Semiconductor Energy Laboratory Co. Manufacturing method of a semiconductor device
US6451677B1 (en) * 1998-02-23 2002-09-17 Texas Instruments Incorporated Plasma-enhanced chemical vapor deposition of a nucleation layer in a tungsten metallization process
US6531071B1 (en) * 2000-01-04 2003-03-11 Micron Technology, Inc. Passivation for cleaning a material
US6274483B1 (en) * 2000-01-18 2001-08-14 Taiwan Semiconductor Manufacturing Company Method to improve metal line adhesion by trench corner shape modification
US6303447B1 (en) * 2000-02-11 2001-10-16 Chartered Semiconductor Manufacturing Ltd. Method for forming an extended metal gate using a damascene process
JP2002280550A (ja) * 2001-03-22 2002-09-27 Mitsubishi Electric Corp 半導体装置の製造方法及び半導体装置
WO2004074932A2 (en) * 2003-02-14 2004-09-02 Applied Materials, Inc. Method and apparatus for cleaning of native oxides with hydroge-containing radicals
US8916232B2 (en) * 2006-08-30 2014-12-23 Lam Research Corporation Method for barrier interface preparation of copper interconnect
US8268409B2 (en) * 2006-10-25 2012-09-18 Asm America, Inc. Plasma-enhanced deposition of metal carbide films
KR101330707B1 (ko) * 2007-07-19 2013-11-19 삼성전자주식회사 반도체 장치의 형성 방법
US7888220B2 (en) * 2008-06-26 2011-02-15 Intel Corporation Self-aligned insulating etchstop layer on a metal contact
US7732284B1 (en) * 2008-12-26 2010-06-08 Texas Instruments Incorporated Post high-k dielectric/metal gate clean
US8894774B2 (en) * 2011-04-27 2014-11-25 Intermolecular, Inc. Composition and method to remove excess material during manufacturing of semiconductor devices
US8772168B2 (en) 2012-01-19 2014-07-08 Globalfoundries Singapore Pte. Ltd. Formation of the dielectric cap layer for a replacement gate structure
US8969922B2 (en) 2012-02-08 2015-03-03 Taiwan Semiconductor Manufacturing Company, Ltd. Field effect transistors and method of forming the same
US8679909B2 (en) * 2012-06-08 2014-03-25 Globalfoundries Singapore Pte. Ltd. Recessing and capping of gate structures with varying metal compositions
US8921947B1 (en) * 2013-06-10 2014-12-30 United Microelectronics Corp. Multi-metal gate semiconductor device having triple diameter metal opening
CN104347417B (zh) * 2013-08-05 2018-01-02 中芯国际集成电路制造(上海)有限公司 Mos晶体管的形成方法
US9269585B2 (en) 2014-01-10 2016-02-23 Taiwan Semiconductor Manufacturing Company, Ltd. Method for cleaning metal gate surface

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5269880A (en) * 1992-04-03 1993-12-14 Northern Telecom Limited Tapering sidewalls of via holes
US5972804A (en) * 1997-08-05 1999-10-26 Motorola, Inc. Process for forming a semiconductor device
US6001716A (en) * 1998-05-22 1999-12-14 United Silicon Incorporated Fabricating method of a metal gate
US20130043516A1 (en) * 2011-08-16 2013-02-21 Semiconductor Manufacturing International (Beijing) Corporation Semiconductor Device and Manufacturing Method Thereof

Also Published As

Publication number Publication date
US10847359B2 (en) 2020-11-24
US20160172186A1 (en) 2016-06-16
US11410846B2 (en) 2022-08-09
US20210082688A1 (en) 2021-03-18
US11996283B2 (en) 2024-05-28
US20170221700A1 (en) 2017-08-03
US9633832B2 (en) 2017-04-25
US20150200089A1 (en) 2015-07-16
DE102014119164B4 (de) 2016-09-22
TW201543536A (zh) 2015-11-16
DE102014119164A1 (de) 2015-07-16
US9269585B2 (en) 2016-02-23
US20220359189A1 (en) 2022-11-10

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees