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TWI560315B - A nozzle unit and a substrate treating equipment having the same - Google Patents

A nozzle unit and a substrate treating equipment having the same

Info

Publication number
TWI560315B
TWI560315B TW102117540A TW102117540A TWI560315B TW I560315 B TWI560315 B TW I560315B TW 102117540 A TW102117540 A TW 102117540A TW 102117540 A TW102117540 A TW 102117540A TW I560315 B TWI560315 B TW I560315B
Authority
TW
Taiwan
Prior art keywords
same
nozzle unit
substrate treating
treating equipment
equipment
Prior art date
Application number
TW102117540A
Other languages
English (en)
Other versions
TW201350620A (zh
Inventor
Yong Sung Park
Sung Kwang Lee
Dong Yeul Kim
Original Assignee
Kookje Electric Korea Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kookje Electric Korea Co Ltd filed Critical Kookje Electric Korea Co Ltd
Publication of TW201350620A publication Critical patent/TW201350620A/zh
Application granted granted Critical
Publication of TWI560315B publication Critical patent/TWI560315B/zh

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B1/00—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
    • B05B1/02—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means designed to produce a jet, spray, or other discharge of particular shape or nature, e.g. in single drops, or having an outlet of particular shape
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C1/00—Apparatus in which liquid or other fluent material is applied to the surface of the work by contact with a member carrying the liquid or other fluent material, e.g. a porous member loaded with a liquid to be applied as a coating
    • B05C1/003—Apparatus in which liquid or other fluent material is applied to the surface of the work by contact with a member carrying the liquid or other fluent material, e.g. a porous member loaded with a liquid to be applied as a coating incorporating means for heating or cooling the liquid or other fluent material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes
    • H10P14/29—
    • H10P72/0402—
    • H10P72/0436—

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
TW102117540A 2012-05-25 2013-05-17 A nozzle unit and a substrate treating equipment having the same TWI560315B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020120055906A KR101402236B1 (ko) 2012-05-25 2012-05-25 노즐 유닛 및 그 노즐 유닛을 갖는 기판 처리 설비

Publications (2)

Publication Number Publication Date
TW201350620A TW201350620A (zh) 2013-12-16
TWI560315B true TWI560315B (en) 2016-12-01

Family

ID=49624045

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102117540A TWI560315B (en) 2012-05-25 2013-05-17 A nozzle unit and a substrate treating equipment having the same

Country Status (6)

Country Link
US (1) US20150083821A1 (zh)
JP (1) JP6005262B2 (zh)
KR (1) KR101402236B1 (zh)
CN (1) CN104334286A (zh)
TW (1) TWI560315B (zh)
WO (1) WO2013176408A1 (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6457498B2 (ja) * 2013-05-23 2019-01-23 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 半導体処理チャンバ用の被覆されたライナーアセンブリ
JP6237264B2 (ja) * 2014-01-24 2017-11-29 東京エレクトロン株式会社 縦型熱処理装置、熱処理方法及び記憶媒体
KR102027655B1 (ko) * 2017-12-01 2019-10-02 한국과학기술원 저방사 유기 기상 젯프린팅 방법 및 장치
WO2019188017A1 (ja) * 2018-03-28 2019-10-03 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、ガスノズルおよび半導体装置の製造方法
JP2023083853A (ja) * 2021-12-06 2023-06-16 キオクシア株式会社 半導体製造装置および半導体装置の製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI329891B (en) * 2004-11-01 2010-09-01 Hitachi Int Electric Inc Substrate processing apparatus and method for manufacturing semiconductor device

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61191015A (ja) * 1985-02-20 1986-08-25 Hitachi Ltd 半導体の気相成長方法及びその装置
JPH07111958B2 (ja) * 1985-03-01 1995-11-29 株式会社日立製作所 半導体のエピタキシャル成長方法
CA1251100A (en) * 1985-05-17 1989-03-14 Richard Cloutier Chemical vapor deposition
KR980011774A (ko) * 1996-07-02 1998-04-30 문정환 반도체 저압화학기상증착장비의 가스주입노즐 및 그 제조방법
JP3142054B2 (ja) * 1996-12-03 2001-03-07 日本碍子株式会社 化学気相堆積装置
JPH10251853A (ja) * 1997-03-17 1998-09-22 Mitsubishi Electric Corp 化学気相成長装置
US6709881B2 (en) * 2000-11-28 2004-03-23 Matsushita Electric Industrial Co., Ltd. Method for manufacturing semiconductor and method for manufacturing semiconductor device
KR20020080954A (ko) * 2001-04-18 2002-10-26 주성엔지니어링(주) 냉벽 화학기상증착 방법 및 장치
JP5144295B2 (ja) * 2007-02-28 2013-02-13 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法
KR100929535B1 (ko) * 2007-11-28 2009-12-03 국제엘렉트릭코리아 주식회사 노즐 유닛 및 그 유닛을 갖는 원자층 증착 설비
DE102008028233A1 (de) * 2008-06-16 2009-12-17 Heraeus Noblelight Gmbh Kompaktes UV-Bestrahlungsmodul
KR101155430B1 (ko) * 2009-01-30 2012-06-15 국제엘렉트릭코리아 주식회사 박막 증착 장치 및 그 방법
JP5409078B2 (ja) * 2009-03-30 2014-02-05 旭化成イーマテリアルズ株式会社 機能性複合体及びその製造方法
JP2011091389A (ja) * 2009-09-25 2011-05-06 Hitachi Kokusai Electric Inc 基板処理装置及び半導体装置の製造方法
KR101313262B1 (ko) * 2010-07-12 2013-09-30 삼성전자주식회사 화학 기상 증착 장치 및 이를 이용한 반도체 에피 박막의 제조 방법
US8960235B2 (en) * 2011-10-28 2015-02-24 Applied Materials, Inc. Gas dispersion apparatus

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI329891B (en) * 2004-11-01 2010-09-01 Hitachi Int Electric Inc Substrate processing apparatus and method for manufacturing semiconductor device

Also Published As

Publication number Publication date
JP2015521381A (ja) 2015-07-27
KR101402236B1 (ko) 2014-06-02
TW201350620A (zh) 2013-12-16
WO2013176408A1 (ko) 2013-11-28
CN104334286A (zh) 2015-02-04
JP6005262B2 (ja) 2016-10-12
US20150083821A1 (en) 2015-03-26
KR20130131932A (ko) 2013-12-04

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