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TWI560311B - Method for forming film - Google Patents

Method for forming film

Info

Publication number
TWI560311B
TWI560311B TW102127735A TW102127735A TWI560311B TW I560311 B TWI560311 B TW I560311B TW 102127735 A TW102127735 A TW 102127735A TW 102127735 A TW102127735 A TW 102127735A TW I560311 B TWI560311 B TW I560311B
Authority
TW
Taiwan
Prior art keywords
forming film
film
forming
Prior art date
Application number
TW102127735A
Other languages
English (en)
Other versions
TW201441411A (zh
Inventor
Takahiro Hiramatsu
Hiroyuki Orita
Takahiro Shirahata
Shizuo Fujita
Toshiyuki Kawaharamura
Original Assignee
Toshiba Mitsubishi Elec Inc
Univ Kyoto
Univ Kochi Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Mitsubishi Elec Inc, Univ Kyoto, Univ Kochi Technology filed Critical Toshiba Mitsubishi Elec Inc
Publication of TW201441411A publication Critical patent/TW201441411A/zh
Application granted granted Critical
Publication of TWI560311B publication Critical patent/TWI560311B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by producing an aerosol and subsequent evaporation of the droplets or particles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C23C18/1208—Oxides, e.g. ceramics
    • C23C18/1216—Metal oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/14—Decomposition by irradiation, e.g. photolysis, particle radiation or by mixed irradiation sources
    • C23C18/145—Radiation by charged particles, e.g. electron beams or ion irradiation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Dispersion Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Thermal Sciences (AREA)
  • Toxicology (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
  • Coating By Spraying Or Casting (AREA)
  • Optics & Photonics (AREA)
TW102127735A 2013-04-17 2013-08-02 Method for forming film TWI560311B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2013/061401 WO2014170972A1 (ja) 2013-04-17 2013-04-17 成膜方法

Publications (2)

Publication Number Publication Date
TW201441411A TW201441411A (zh) 2014-11-01
TWI560311B true TWI560311B (en) 2016-12-01

Family

ID=51730944

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102127735A TWI560311B (en) 2013-04-17 2013-08-02 Method for forming film

Country Status (7)

Country Link
US (1) US20160047037A1 (zh)
JP (1) JP6329533B2 (zh)
KR (1) KR20150130393A (zh)
CN (1) CN105121699B (zh)
DE (1) DE112013006955B4 (zh)
TW (1) TWI560311B (zh)
WO (1) WO2014170972A1 (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102507701B1 (ko) * 2019-02-28 2023-03-09 도시바 미쓰비시덴키 산교시스템 가부시키가이샤 성막 장치
JP7731995B2 (ja) * 2021-09-22 2025-09-01 信越化学工業株式会社 成膜方法及び成膜装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011111664A (ja) * 2009-11-30 2011-06-09 Mitsubishi Electric Corp 機能膜形成方法および機能膜形成体

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5366770A (en) * 1990-04-17 1994-11-22 Xingwu Wang Aerosol-plasma deposition of films for electronic cells
US5131752A (en) * 1990-06-28 1992-07-21 Tamarack Scientific Co., Inc. Method for film thickness endpoint control
US5451260A (en) * 1994-04-15 1995-09-19 Cornell Research Foundation, Inc. Method and apparatus for CVD using liquid delivery system with an ultrasonic nozzle
JP2004002907A (ja) * 2002-05-09 2004-01-08 Ulvac Japan Ltd 酸化ケイ素薄膜の形成方法
JP4055149B2 (ja) * 2003-06-27 2008-03-05 ソニー株式会社 液体吐出装置及び液体吐出方法
JP4727355B2 (ja) * 2005-09-13 2011-07-20 株式会社フジクラ 成膜方法
US20090081412A1 (en) * 2005-06-01 2009-03-26 Konica Minolta Holdings, Inc. Thin film forming method and transparent conductive film
US8354294B2 (en) * 2006-01-24 2013-01-15 De Rochemont L Pierre Liquid chemical deposition apparatus and process and products therefrom
JPWO2009028452A1 (ja) * 2007-08-27 2010-12-02 コニカミノルタホールディングス株式会社 金属酸化物半導体の製造方法およびこれを用い作製された酸化物半導体薄膜を用いた薄膜トランジスタ
JP5437583B2 (ja) * 2008-03-18 2014-03-12 リンテック株式会社 金属酸化物の製膜方法
CN102165097A (zh) * 2008-09-24 2011-08-24 东芝三菱电机产业系统株式会社 氧化锌膜(ZnO)或氧化镁锌膜(ZnMgO)的成膜方法及氧化锌膜或氧化镁锌膜的成膜装置
WO2010083510A1 (en) * 2009-01-16 2010-07-22 Veeco Instruments, Inc. Composition and method for low temperature deposition of ruthenium
US20110014305A1 (en) * 2009-07-15 2011-01-20 Food Industry Research And Development Institute Extracts of eleutherococcus spp., preparation method thereof and use of the same
JP5621130B2 (ja) * 2009-11-24 2014-11-05 株式会社陶喜 ミスト噴出用ノズル、それを備えた成膜装置および成膜方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011111664A (ja) * 2009-11-30 2011-06-09 Mitsubishi Electric Corp 機能膜形成方法および機能膜形成体

Also Published As

Publication number Publication date
DE112013006955T5 (de) 2016-01-07
KR20150130393A (ko) 2015-11-23
DE112013006955B4 (de) 2024-02-08
HK1211994A1 (zh) 2016-06-03
JPWO2014170972A1 (ja) 2017-02-16
WO2014170972A1 (ja) 2014-10-23
CN105121699A (zh) 2015-12-02
JP6329533B2 (ja) 2018-05-23
TW201441411A (zh) 2014-11-01
CN105121699B (zh) 2018-04-17
US20160047037A1 (en) 2016-02-18

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