TWI554780B - A method for producing anti-reflective film - Google Patents
A method for producing anti-reflective film Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 230000003667 anti-reflective effect Effects 0.000 title description 9
- 229920000642 polymer Polymers 0.000 claims description 173
- 229920006254 polymer film Polymers 0.000 claims description 120
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- 238000000034 method Methods 0.000 claims description 48
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 47
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 47
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- BGJSXRVXTHVRSN-UHFFFAOYSA-N 1,3,5-trioxane Chemical group C1OCOCO1 BGJSXRVXTHVRSN-UHFFFAOYSA-N 0.000 claims description 3
- 108010039918 Polylysine Proteins 0.000 claims description 3
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 3
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 3
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 3
- 125000001183 hydrocarbyl group Chemical group 0.000 claims description 3
- 125000002883 imidazolyl group Chemical group 0.000 claims description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 3
- 239000004417 polycarbonate Substances 0.000 claims description 3
- 229920000515 polycarbonate Polymers 0.000 claims description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 3
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 3
- 229920000656 polylysine Polymers 0.000 claims description 3
- 229920002223 polystyrene Polymers 0.000 claims description 3
- 125000003396 thiol group Chemical group [H]S* 0.000 claims description 3
- 125000002467 phosphate group Chemical group [H]OP(=O)(O[H])O[*] 0.000 claims description 2
- 108010026466 polyproline Proteins 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 1
- QAOWNCQODCNURD-UHFFFAOYSA-L sulfate group Chemical group S(=O)(=O)([O-])[O-] QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 claims 1
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid group Chemical group S(O)(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
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- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical group OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 1
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Description
本發明係關於一種膜之製備方法,特別係關於一種抗反射膜之製備方法。 The present invention relates to a method for preparing a film, and more particularly to a method for preparing an antireflection film.
近年來,隨著觸控式螢幕及大尺寸面板的潮流興起,市場上對於抗反射膜的需求亦逐漸提高,抗反射膜實際上更可以運用於建材玻璃、汽車車窗、光學儀器之鏡片等,透過抗反射膜降低光線於特定物體表面所產生的反射光,避免因光線干擾而影響物件的應用性,鑒於抗反射膜具有廣泛用途及高實用性,關於抗反射膜之研究及發展正如火如荼地進行中。 In recent years, with the rise of touch-screen and large-size panels, the demand for anti-reflection films has gradually increased in the market. Anti-reflection films can be used in building glass, automotive windows, optical instruments, etc. The anti-reflection film reduces the reflected light generated by the light on the surface of a specific object, and avoids the influence of the object due to light interference. In view of the wide application and high practicality of the anti-reflection film, the research and development of the anti-reflection film are in full swing. The ground is in progress.
習知抗反射膜之製備方法為利用真空鍍膜法,在物體表面上沉積一習知抗反射膜。雖然透過該習知抗反射膜之製備方法所製得之該習知抗反射膜均勻性及性能卓越,然而,眾所周知地,真空鍍膜法的技術門檻高、儀器設備昂貴且所需沉積時間長,使獲得之該習知抗反射膜的成本居高不下,再者,該習知抗反射膜之製備方法僅適用於將該習知抗反射膜結合於呈平板狀的物體上,當物體表面呈現不規則狀時,將會大幅降低該習知抗反射膜的均勻性,如此一來,便限制了該習知抗反射膜之製備方法的應用性。 A conventional anti-reflection film is prepared by depositing a conventional anti-reflection film on the surface of an object by a vacuum coating method. Although the conventional anti-reflective film has excellent uniformity and performance by the preparation method of the conventional anti-reflection film, it is well known that the vacuum coating method has high technical threshold, expensive equipment, and long deposition time. The cost of the conventional anti-reflection film obtained is high. Moreover, the preparation method of the conventional anti-reflection film is only suitable for bonding the conventional anti-reflection film to a flat object, when the surface of the object is presented. In the case of irregularities, the uniformity of the conventional antireflection film is greatly reduced, and thus the applicability of the conventional antireflection film preparation method is limited.
有鑑於此,有必要提供一種抗反射膜之製備方法,以解決該習知抗反射膜之製備方法中,所使用之真空鍍膜法具有成本高昂及應用性受限等問題。 In view of the above, it is necessary to provide a method for preparing an anti-reflection film to solve the problems in the preparation method of the conventional anti-reflection film, and the vacuum coating method used is costly and limited in application.
本發明係提供一種抗反射膜之製備方法,係透過層堆疊法之簡單製程,於基材表面生成一抗反射膜。 The invention provides a method for preparing an anti-reflection film, which is an anti-reflection film formed on the surface of a substrate by a simple process of the layer stacking method.
本發明係提供一種抗反射膜之製備方法,係能夠於表面非平整的基材上形成該抗反射膜。 The present invention provides a method for producing an antireflection film which is capable of forming the antireflection film on a substrate having a non-flat surface.
本發明之一種抗反射膜之製備方法,係包含:一基板提供步驟,係提供一基板;一高分子基膜形成步驟,以一第一電荷高分子溶液於該基板之表面形成一第一電荷高分子膜,續以一第二電荷高分子溶液於該第一電荷高分子膜之表面形成一第二電荷高分子膜,使該第一電荷高分子膜及該第二電荷高分子膜共同形成一高分子基膜;一高分子基膜堆疊步驟,以該第一電荷高分子溶液於該第二電荷高分子膜表面形成另一第一電荷高分子膜,續以該第二電荷高分子溶液於該第一電荷高分子膜表面形成另一第二電荷高分子膜,以於該高分子基膜表面另堆疊形成一高分子基膜;一重複步驟,係重複該高分子基膜堆疊步驟,直至數層該高分子基膜於該基板表面共同形成一高分子膜,該高分子膜之厚度至少為20nm;及一二氧化矽沉析步驟,以一二氧化矽前驅液於該高分子膜中沉析二氧化矽。 The method for preparing an anti-reflection film of the present invention comprises: a substrate providing step of providing a substrate; and a polymer base film forming step of forming a first charge on the surface of the substrate by using a first charge polymer solution a polymer film, wherein a second charge polymer film is formed on the surface of the first charge polymer film by a second charge polymer solution, so that the first charge polymer film and the second charge polymer film are formed together a polymer base film; a polymer base film stacking step, the first charge polymer solution is formed on the surface of the second charge polymer film to form another first charge polymer film, and the second charge polymer solution is continued Forming another second charge polymer film on the surface of the first charge polymer film to form a polymer base film on the surface of the polymer base film; repeating the polymer base film stacking step in a repeated step, Up to several layers of the polymer base film jointly forming a polymer film on the surface of the substrate, the polymer film having a thickness of at least 20 nm; and a cerium oxide precipitation step, using a cerium oxide precursor liquid to the high score The cerium oxide is precipitated in the submembrane.
本發明抗反射膜之製備方法,其中,另包含一高分子膜去除步驟,係於該二氧化矽沉析步驟後,移除該高分子膜。 The method for preparing an antireflection film of the present invention further comprises a polymer film removing step of removing the polymer film after the ceria precipitation step.
本發明抗反射膜之製備方法,其中,該第一電荷高分子溶液包含一第一電荷高分子及一第一溶劑,該第一電荷高分子具有胺基基團、胍基基團或咪唑基團,該第二電荷高分子水溶液包含一第二電荷高分子及一第二溶劑,該第二電荷高分子具有羧基基團、磷酸基團或硫酸基團。 The method for preparing an antireflection film according to the present invention, wherein the first charge polymer solution comprises a first charge polymer and a first solvent, the first charge polymer having an amine group, a mercapto group or an imidazolyl group The second charged polymer aqueous solution comprises a second charge polymer and a second solvent, and the second charge polymer has a carboxyl group, a phosphoric acid group or a sulfuric acid group.
本發明抗反射膜之製備方法,其中,該第一電荷高分子係為接枝烴基基團之高分子,或者該第一電荷高分子係為嵌段型高分子。 In the method for producing an antireflection film of the present invention, the first charge polymer is a polymer grafted with a hydrocarbon group, or the first charge polymer is a block polymer.
本發明抗反射膜之製備方法,其中,該第一電荷高分子為聚 賴胺酸接枝癸酸,該第一電荷高分子的接枝率為0.2~0.4,且該第二電荷高分子為聚榖胺酸。 The method for preparing an antireflection film of the present invention, wherein the first charge polymer is a poly The lysine is grafted with citric acid, the graft ratio of the first charge polymer is 0.2 to 0.4, and the second charge polymer is polylysine.
本發明抗反射膜之製備方法,其中,該第一電荷高分子為聚賴胺酸-嵌段-聚苯乙烯,且該第二電荷高分子為聚榖胺酸。 In the method for preparing an antireflection film of the present invention, the first charge polymer is polylysine-block-polystyrene, and the second charge polymer is polyamic acid.
本發明抗反射膜之製備方法,其中,該第一電荷高分子溶液之pH值為4~7.5。 The method for preparing an antireflection film of the present invention, wherein the first charge polymer solution has a pH of 4 to 7.5.
本發明抗反射膜之製備方法,其中,該基板為玻璃、聚甲基丙烯酸甲酯、聚碳酸酯、氧化銦錫導電玻璃、聚對苯二甲酸乙二醇酯或氧化鋁。 The method for preparing an antireflection film of the present invention, wherein the substrate is glass, polymethyl methacrylate, polycarbonate, indium tin oxide conductive glass, polyethylene terephthalate or aluminum oxide.
本發明抗反射膜之製備方法,其中,該二氧化矽前趨液係包含一二氧化矽前驅物,該二氧化矽前驅物係為具四氧矽基團化合物或具三氧矽基團化合物。 The method for preparing an antireflection film of the present invention, wherein the cerium oxide precursor liquid system comprises a cerium oxide precursor, the cerium oxide precursor is a compound having a tetraoxindole group or a compound having a trioxane group. .
本發明抗反射膜之製備方法,其中,由抗反射膜之製備方法係獲得一抗反射膜,該抗反射膜之厚度為80~160nm。 In the method for preparing an antireflection film of the present invention, an antireflection film is obtained by a method for preparing an antireflection film, and the antireflection film has a thickness of 80 to 160 nm.
本發明抗反射膜之製備方法係以溶液製程,將該第一電荷高分子膜及該第二電荷高分子膜層層交錯堆疊,步驟簡單且不需使用大型、精密、昂貴及耗能之基台即可進行,相較於習用以製備抗反射膜之真空鍍膜法,本發明係可以大幅簡化該抗反射膜製程,進而達到降低該抗反射膜之製程成本之功效。 The method for preparing the anti-reflection film of the present invention is a solution process in which the first charge polymer film and the second charge polymer film layer are alternately stacked, and the steps are simple and do not need to use a large, precise, expensive and energy-consuming basis. The stage can be carried out. Compared with the vacuum coating method which is conventionally used for preparing an anti-reflection film, the present invention can greatly simplify the process of the anti-reflection film, thereby achieving the effect of reducing the process cost of the anti-reflection film.
本發明之抗反射膜之製備方法係利用液態之該第一電荷高分子、該第二電荷高分子及該二氧化矽前驅物對該基板進行處理,因此可於各式形狀之該基材表面上生成該抗反射膜,進而達到增加製得之該抗反射膜應用性之功效。 The anti-reflection film of the present invention is prepared by treating the substrate with the first charge polymer, the second charge polymer and the ceria precursor in a liquid state, so that the substrate surface can be formed in various shapes. The anti-reflection film is formed thereon to further increase the applicability of the anti-reflection film obtained.
第1a圖係本發明抗反射膜之製備方法所得之抗反射膜第A1a~A5a組之層數-厚度圖。 Fig. 1a is a layer-thickness diagram of the anti-reflection film group A1a to A5a obtained by the method for producing an antireflection film of the present invention.
第1b圖係本發明抗反射膜之製備方法所得之抗反射膜第A1b~A5b組之層數-厚度圖。 Fig. 1b is a layer-thickness diagram of the anti-reflection film group A1b to A5b obtained by the method for producing an antireflection film of the present invention.
第2a圖係本發明抗反射膜之製備方法所得之抗反射膜之SEM俯視圖。 Fig. 2a is a SEM top view of the antireflection film obtained by the method for producing the antireflection film of the present invention.
第2b圖係本發明抗反射膜之製備方法所得之抗反射膜之SEM剖視圖。 Fig. 2b is a SEM cross-sectional view of the antireflection film obtained by the method for producing the antireflection film of the present invention.
第3圖係本發明抗反射膜之製備方法之高分子膜之FTIR光譜。 Fig. 3 is a FTIR spectrum of a polymer film of the method for producing an antireflection film of the present invention.
第4圖係本發明抗反射膜之製備方法所得之抗反射膜之FTIR光譜。 Fig. 4 is an FTIR spectrum of an antireflection film obtained by the method for producing an antireflection film of the present invention.
第5圖係本發明抗反射膜之製備方法所得之抗反射膜第D1~D3組及對照組之穿透光譜圖。 Fig. 5 is a chart showing the breakthrough spectra of the antireflection film groups D1 to D3 and the control group obtained by the method for preparing the antireflection film of the present invention.
第6圖係本發明抗反射膜之製備方法所得之抗反射膜第D3、D4組及對照組之穿透光譜圖。 Fig. 6 is a chart showing the breakthrough spectra of the antireflection film group D3, D4 and the control group obtained by the method for producing the antireflection film of the present invention.
第7圖係本發明抗反射膜之製備方法所得之抗反射膜第D5、D6組及對照組之穿透光譜圖。 Fig. 7 is a chart showing the breakthrough spectra of the antireflection film group D5, D6 and the control group obtained by the method for producing the antireflection film of the present invention.
第8圖係本發明抗反射膜之製備方法所得之抗反射膜第D1、D3、D6、D7、D8組及對照組之穿透光譜圖。 Fig. 8 is a chart showing the penetration spectra of the antireflection film groups D1, D3, D6, D7, and D8 and the control group obtained by the method for producing the antireflection film of the present invention.
第9圖係本發明抗反射膜之製備方法所得之抗反射膜第E1組及對照組之穿透光譜圖。 Fig. 9 is a chart showing the penetration spectra of the antireflection film group E1 and the control group obtained by the method for producing the antireflection film of the present invention.
第10圖係本發明抗反射膜之製備方法所得之抗反射膜之照片圖。 Fig. 10 is a photographic view of an antireflection film obtained by the method for producing an antireflection film of the present invention.
為讓本發明之上述及其他目的、特徵及優點能更明顯易懂,下文特舉本發明之較佳實施例,並配合所附圖式,作詳細說明如下:本發明抗反射膜之製備方法係包含:一基板提供步驟、一高 分子基膜形成步驟、一高分子基膜堆疊步驟、一重複步驟及一二氧化矽沉析步驟。係透過一第一電荷高分子溶液及一第二電荷高分子溶液,於一基板表面上反覆堆疊數個高分子基膜,以共同形成一高分子膜,並透過一二氧化矽前趨液於該高分子膜內沉析二氧化矽,另外還可以另包含一高分子膜去除步驟,係於該二氧化矽沉析步驟後去除該高分子膜。透過本發明抗反射膜之製備方法以於該基板表面形成一抗反射膜。 The above and other objects, features and advantages of the present invention will become more <RTIgt; The system includes: a substrate providing step, a high The molecular base film forming step, a polymer base film stacking step, a repeating step, and a cerium oxide precipitation step. A plurality of polymer base films are stacked on a surface of a substrate through a first charge polymer solution and a second charge polymer solution to form a polymer film and pass through a cerium oxide precursor solution. The polymer film is precipitated with cerium oxide, and a polymer film removing step may be further included, and the polymer film is removed after the cerium oxide precipitation step. Through the preparation method of the anti-reflection film of the present invention, an anti-reflection film is formed on the surface of the substrate.
本發明所述之「第一電荷」與「第二電荷」係為相反的電荷類型,舉例而言,第一電荷若為正電荷,則第二電荷則為負電荷,以此類推,在此合先敘明。 The "first charge" and the "second charge" in the present invention are opposite charge types. For example, if the first charge is a positive charge, the second charge is a negative charge, and so on. First described.
詳言之,該基板提供步驟係用以提供該基板,該基板係用以支撐該高分子基膜的生長,該基板可以為任何欲於其表面成形該抗反射膜之材料,例如:玻璃、聚甲基丙烯酸甲酯、聚碳酸酯、氧化銦錫導電玻璃、聚對苯二甲酸乙二醇酯或氧化鋁等,其中,為使具有該抗反射膜之基板後續可進一步製作形成3C產品之面板、汽車車窗及鏡片等物品,該基板較佳呈現透明;且由於本發明抗反射膜之製備方法中,係以溶液法使該抗反射膜成形於該基板上,因此該基板之形狀係可以任意形狀,如:平板狀、圓弧狀或不規則形等,在此係不限制該基板的材質及形狀。 In detail, the substrate providing step is for providing the substrate for supporting the growth of the polymer base film, and the substrate may be any material for forming the anti-reflection film on the surface thereof, for example, glass, Polymethyl methacrylate, polycarbonate, indium tin oxide conductive glass, polyethylene terephthalate or aluminum oxide, etc., wherein the substrate having the antireflection film can be further formed into a 3C product. The substrate, the automobile window, the lens, and the like, the substrate is preferably transparent; and in the method for preparing the anti-reflection film of the present invention, the anti-reflection film is formed on the substrate by a solution method, so the shape of the substrate is The shape may be any shape, such as a flat plate shape, an arc shape, or an irregular shape, and the material and shape of the substrate are not limited herein.
在此值得一提的是,後續係以該第一電荷高分子於該基板表面形成一第一電荷高分子膜,為了使本發明可以於該基板表面形成均一度高的第一電荷高分子膜,該基板表面較佳係帶有一第二電荷,以利於該基板與該第一電荷高分子溶液產生電荷吸引力,順利於該基板表面產生該第一電荷高分子膜。因此,為了提升該第一電荷高分子膜成膜時的均勻性,及使後續所形成之該抗反射膜與該基板具有良好結合力,係可以在進行該高分子基膜形成步驟前改質該基板表面,使該基板表面帶有第二電荷及後續可以和該第一電荷高分子形成氫鍵之基團,改質的方法可以為電漿表面 處理等方法,在此係不設限。 It is worth mentioning that a first charge polymer film is formed on the surface of the substrate by the first charge polymer, so that the first charge polymer film with uniformity can be formed on the surface of the substrate. Preferably, the surface of the substrate is provided with a second electric charge to facilitate the charge attraction of the substrate and the first charge polymer solution, and the first charge polymer film is smoothly generated on the surface of the substrate. Therefore, in order to improve the uniformity of the film formation of the first charge polymer film and to have a good adhesion between the subsequently formed anti-reflection film and the substrate, the film may be modified before the step of forming the polymer base film. The surface of the substrate is such that the surface of the substrate carries a second charge and a group which can form a hydrogen bond with the first charge polymer, and the modification method can be a plasma surface. Processing and other methods are not limited here.
此外,以避免該基板表面的雜質對後續形成之該抗反射膜與該基板的結合力造成影響,係可以先以一第一淨化溶液及一第二淨化溶液依序清潔該基板,以除去該基板表面之有機物、氧化物或金屬離子。於本發明第一實施例中,該基板之材質為玻璃,該第一淨化溶液包含水、雙氧水(重量百分濃度為31%)及氨水(重量百分濃度為25%),並以體積比5:1:1混合而成,該第二淨化溶液包含水、雙氧水及鹽酸(重量百分濃度為36%),並以體積比5:1:1混合而成,係將該基材浸泡於該第一淨化溶液5分鐘,以鹼性環境中的雙氧水去除殘留在該基材表面的有機物及粒子,以清水潤洗後,再將該基材浸泡於該第二淨化溶液中5分鐘,去除該基材表面的金屬離子,以獲得具有潔淨表面的該基材,續以該基材進行該高分子基膜形成步驟。 In addition, in order to prevent the impurities on the surface of the substrate from affecting the adhesion between the anti-reflection film and the substrate, the first cleaning solution and the second cleaning solution may be sequentially cleaned to remove the substrate. Organic matter, oxide or metal ions on the surface of the substrate. In the first embodiment of the present invention, the substrate is made of glass, and the first purification solution comprises water, hydrogen peroxide (31% by weight) and ammonia (25% by weight), and is in a volume ratio. 5:1:1 mixture, the second purification solution comprises water, hydrogen peroxide and hydrochloric acid (36% by weight), and is mixed at a volume ratio of 5:1:1, the substrate is immersed in The first purification solution is removed for 5 minutes, and the organic matter and particles remaining on the surface of the substrate are removed by hydrogen peroxide in an alkaline environment, rinsed with water, and then the substrate is immersed in the second purification solution for 5 minutes to remove The metal ions on the surface of the substrate are used to obtain the substrate having a clean surface, and the polymer base film forming step is continued with the substrate.
該高分子基膜形成步驟係於該基板表面形成該高分子基膜,詳言之,係先以該第一電荷高分子溶液塗佈於該基板表面以形成該第一電荷高分子膜,接著將該第二電荷高分子溶液塗佈於該第一電荷高分子膜表面,以形成該第二電荷高分子膜,使該第一電荷高分子膜及該第二電荷高分子膜共同形成該高分子基膜。該第一電荷高分子溶液係包含一第一電荷高分子及一第一溶劑,該第二電荷高分子溶液係包含一第二電荷高分子及一第二溶劑,其中,基板與第一電荷高分子帶有相反之電荷,且該第一電荷高分子及該第二電荷高分子係帶有相反的電荷,於本發明第一實施例中,該第一電荷高分子帶有正電,該第二電荷高分子帶負電,且該基板略帶負電,惟,該第一電荷高分子及該第二電荷高分子所帶電荷,實際上可以根據該基板表面的電荷種類進行調整,係不以本實施例為限。 The polymer base film forming step is to form the polymer base film on the surface of the substrate. In detail, the first charge polymer solution is first coated on the surface of the substrate to form the first charge polymer film, and then Applying the second charge polymer solution to the surface of the first charge polymer film to form the second charge polymer film, so that the first charge polymer film and the second charge polymer film together form the high Molecular base film. The first charge polymer solution comprises a first charge polymer and a first solvent, and the second charge polymer solution comprises a second charge polymer and a second solvent, wherein the substrate and the first charge are high The molecule has an opposite charge, and the first charge polymer and the second charge polymer have opposite charges. In the first embodiment of the present invention, the first charge polymer has a positive charge. The second charge polymer is negatively charged, and the substrate is slightly negatively charged. However, the charge of the first charge polymer and the second charge polymer can be adjusted according to the type of charge on the surface of the substrate. The examples are limited.
更詳言之,該第一電荷高分子及該第二電荷高分子係具有帶正電或負電之至少一帶電基團,例如本實施例之該第一電荷高分子係具有 帶有正電之胺基基團、胍基基團或咪唑基團,該第二電荷高分子具有帶有負電之羧基基團、磷酸基團或硫酸基團。較佳地,該第一電荷高分子係可以為接枝烴基基團之高分子,或者為嵌段型高分子,由於該抗反射膜之孔洞率係與抗反射效能成正相關,因此可以利用該第一電荷高分子的特定組成及構形,提高後續成形之該抗反射膜之孔洞率。舉例而言,於本發明之第一實施例中,該基板材質為玻璃,該第一電荷高分子為聚賴胺酸接枝癸酸(Poly(L-lysine)-graft-Decanoyl,簡稱PLD),且該第二電荷高分子為聚榖胺酸(Poly(L-glutamic acid),簡稱PGA);於本發明之第二實施例中,該基板的材質為PMMA,該第一電荷高分子為聚賴胺酸-嵌段-聚苯乙烯(Poly(L-lysine)-block-polystyrene,簡稱PLL-b-PS),且該第二電荷高分子為聚榖胺酸。 More specifically, the first charge polymer and the second charge polymer have at least one charged group positively or negatively charged, for example, the first charge polymer system of the embodiment has A positively charged amino group, a mercapto group or an imidazole group, the second charge polymer having a negatively charged carboxyl group, a phosphate group or a sulfuric acid group. Preferably, the first charge polymer may be a polymer of a grafted hydrocarbon group or a block type polymer, and since the porosity ratio of the antireflection film is positively correlated with antireflection efficiency, the The specific composition and configuration of the first charge polymer increases the porosity of the anti-reflective film that is subsequently formed. For example, in the first embodiment of the present invention, the substrate is made of glass, and the first charge polymer is poly(L-lysine-graft-Decanoyl, PLD for short). The second charge polymer is poly(L-glutamic acid, PGA for short). In the second embodiment of the present invention, the substrate is made of PMMA, and the first charge polymer is Poly-L-lysine-block-polystyrene (PLL-b-PS), and the second charge polymer is poly-proline.
於本發明之第一實施例中,該第一電荷高分子的接枝比為0.2~0.4(在此所述的接枝比係由PLD的NMR訊號之比值所計算而得),且該第一電荷高分子溶液的pH值為4~7.5,使該第一電荷高分子能夠於該第一溶劑中形成微胞(vesicle),當將該第一電荷高分子溶液塗佈於該基板表面時,由該第一電荷高分子所形成的微胞係會展開,以帶有電荷之基團朝外,其餘不帶電之中性基團(如長碳鏈)朝內形成雙層結構,並且該第一電荷高分子所接枝的葵酸,可以使該第一電荷高分子附著於該基板時產生許多立體空間,讓後續形成之第一電荷高分子膜中具有數個孔洞,當沉析二氧化矽並生成該抗反射膜時,該抗反射膜因具有數個孔洞而有良好的抗反射表現。 In the first embodiment of the present invention, the graft ratio of the first charge polymer is 0.2 to 0.4 (the graft ratio described herein is calculated from the ratio of the NMR signals of the PLD), and the first The pH of the charge polymer solution is 4 to 7.5, so that the first charge polymer can form a vesicle in the first solvent, and when the first charge polymer solution is coated on the surface of the substrate The microcell line formed by the first charge polymer expands, with the charged group facing outward, and the remaining uncharged neutral groups (such as the long carbon chain) form a double layer inward, and The sunflower acid grafted by the first charge polymer can cause a plurality of stereoscopic spaces when the first charge polymer adheres to the substrate, and has a plurality of holes in the first charge polymer film formed later. When the antimony oxide film is formed and the antireflection film is formed, the antireflection film has a good antireflection performance because it has a plurality of holes.
此外,微胞的尺寸約為40~200nm,並且可以依據接枝比及pH值調整微胞的大小。又,該第一電荷高分子溶液的pH值較佳為5,以令該第一電荷高分子溶液中的微胞可以穩定存在,且相較於pH7.4,pH為5之PLD介電位較高,使PLD以較鬆散的排列堆疊於該基板,令成形 的該第一電荷高分子膜具有較高的孔隙度,並且可以讓成形之該第一電荷高分子膜表面具有適當的酸鹼值,避免影響該第二電荷高分子膜之成形(PGA會在pH小於4的環境中溶解)。為了使該微胞可以順利產生有利於後續產生之該抗反射膜具有多孔性,於該第一電荷高分子溶於該第一溶劑之前,係可以先將PLD溶於甲醇中,再以透析法製備PLD微胞;詳言之,PLD係以1mg/ml的濃度溶於甲醇,並將PLD甲醇溶液置入6000~8000MW透析袋中,對1500ml之0.01N的PBS進行透析,於特定時間後更換PBS,反覆進行透析即可得PLD微胞,隨即將PLD微胞溶於該第一溶劑中,以獲得該第一電荷高分子溶液,本實施例之該第一溶劑為水。 In addition, the size of the micelle is about 40 to 200 nm, and the size of the micelle can be adjusted according to the graft ratio and pH. Moreover, the pH of the first charge polymer solution is preferably 5, so that the micelles in the first charge polymer solution can be stably present, and the PLD dielectric potential of pH 5 is compared with pH 7.4. Higher, so that the PLD is stacked on the substrate in a looser arrangement, forming The first charge polymer film has a high porosity, and the surface of the first charge polymer film formed has an appropriate pH value to avoid affecting the formation of the second charge polymer film (PGA will be Dissolved in an environment with a pH of less than 4. In order to enable the microcell to be smoothly produced to facilitate the subsequent generation of the antireflection film having porosity, before the first charge polymer is dissolved in the first solvent, the PLD may be first dissolved in methanol and then dialyzed. Prepare PLD micelles; in detail, PLD is dissolved in methanol at a concentration of 1 mg/ml, and PLD methanol solution is placed in a 6000-8000 MW dialysis bag, and 1500 ml of 0.01 N PBS is dialyzed and replaced after a specific time. The PBS is repeatedly dialyzed to obtain a PLD microcell, and then the PLD microcell is dissolved in the first solvent to obtain the first charged polymer solution. The first solvent in the embodiment is water.
於本發明之第二實施例中,該第一溶劑為水,該第一電荷高分子在水中會自然地以親水端(NH3+)朝外、疏水端朝內的構形形成PLL-b-PS微胞,依據如第一實施例中的機制,使後續形成之該第一電荷高分子膜形成數個孔洞,且由於第二實施例之該第一電荷高分子溶液中,PLL-b-PS微胞的堆疊情況受酸鹼度的影響較不敏感,該第一電荷高分子溶液的pH值可以擴大為3~7.5。 In a second embodiment of the present invention, the first solvent is water, and the first charge polymer naturally forms PLL-b-PS in water with a hydrophilic end (NH3+) facing outward and a hydrophobic end facing inward. The microcells, according to the mechanism in the first embodiment, form a plurality of holes in the subsequently formed first charge polymer film, and in the first charge polymer solution of the second embodiment, PLL-b-PS The stacking of the micelles is less sensitive to the influence of pH, and the pH of the first charged polymer solution can be expanded to 3 to 7.5.
詳言之,本發明係以塗佈的方式形成該第一電荷高分子及該第二電荷高分子。當將該第一電荷高分子溶液塗佈於該基板,該第一電荷高分子受到電荷吸引及氫鍵作用力而吸附於該基板表面,以形成該第一電荷高分子膜,當將該第二電荷高分子溶液塗佈於該第一電荷高分子膜表面時,由於該第一電荷高分子及該第二電荷高分子係帶有相反電荷,彼此之間便會因電荷吸引力於第一電荷高分子膜表面形成一第二電荷高分子膜,此外,該第一電荷高分子與該第二電荷高分子之間亦自然地受到胺基酸之間的氫鍵作用力,加強該第一電荷高分子膜與該第二電荷高分子膜結合緊密度。在此所述的「塗佈」係指藉由各種方法使該第一電荷高分子溶液或該第二電荷高分子溶液附著於目標表面上。舉例而言:塗佈的方法係可以 為旋轉塗佈、浸漬塗佈、噴霧塗佈等,在此並不設限。本發明之第一實施例中,係將該基板先浸泡於該第一電荷高分子溶液中約10分鐘,再快速地將具有該第一電荷高分子膜之基板浸泡於一洗滌液,清洗殘留的該第一電荷高分子溶液,接著浸入該第二電荷高分子溶液中10分鐘以形成該第二電荷高分子膜,並經洗滌液之清洗後,即於該基板表面形成該高分子基膜。本實施例中,該第一電荷高分子溶液及該第二電荷高分子溶液之溫度為常溫(25~35℃),惟本發明所屬技術領域中具有通常知識者可以依該第一電荷高分子及該第二電荷高分子的種類進行溫度之調整,本發明係不加以限制。 In detail, the present invention forms the first charge polymer and the second charge polymer in a coating manner. When the first charge polymer solution is applied to the substrate, the first charge polymer is adsorbed on the surface of the substrate by charge attraction and hydrogen bonding force to form the first charge polymer film. When the di-charged polymer solution is applied to the surface of the first charge polymer film, since the first charge polymer and the second charge polymer have opposite charges, the charge is attracted to each other first. Forming a second charge polymer film on the surface of the charged polymer film, and further, the first charge polymer and the second charge polymer are naturally subjected to a hydrogen bond force between the amino acids to strengthen the first The charge polymer film is tightly bonded to the second charge polymer film. The term "coating" as used herein means that the first charge polymer solution or the second charge polymer solution is attached to a target surface by various methods. For example: the coating method can be For spin coating, dip coating, spray coating, etc., it is not limited herein. In the first embodiment of the present invention, the substrate is first immersed in the first charge polymer solution for about 10 minutes, and the substrate having the first charge polymer film is quickly immersed in a washing liquid to wash the residue. The first charge polymer solution is then immersed in the second charge polymer solution for 10 minutes to form the second charge polymer film, and after washing with the washing liquid, the polymer base film is formed on the surface of the substrate. . In this embodiment, the temperature of the first charge polymer solution and the second charge polymer solution is normal temperature (25 to 35 ° C), but those having ordinary knowledge in the technical field of the invention may rely on the first charge polymer The temperature of the second charge polymer is adjusted, and the present invention is not limited.
該高分子基膜堆疊步驟係於該高分子基膜表面另堆疊形成一高分子基膜。詳言之,該高分子基膜堆疊步驟係包含:以該第一電荷高分子溶液於該第二電荷高分子膜表面形成另一第一電荷高分子膜,續以該第二電荷高分子溶液於該第一電荷高分子膜表面形成另一第二電荷高分子膜,以於該高分子基膜表面另堆疊形成一高分子基膜,該第一電荷高分子膜與該第二電荷高分子膜的成形機制係與上述該高分子基膜形成步驟相同,在此係不多加贅述。 The polymer base film stacking step is performed by stacking another polymer base film on the surface of the polymer base film. In detail, the polymer base film stacking step comprises: forming another first charge polymer film on the surface of the second charge polymer film by using the first charge polymer solution, and continuing the second charge polymer solution Forming another second charge polymer film on the surface of the first charge polymer film to form a polymer base film on the surface of the polymer base film, the first charge polymer film and the second charge polymer The film forming mechanism is the same as the above-described polymer base film forming step, and will not be described here.
於該基板表面形成兩層之該高分子基膜後,係進行該重複步驟。該重複步驟為反覆進行該高分子基膜堆疊步驟,使因塗佈溶液所形成之數層第一電荷高分子膜及第二電荷高分子膜交錯堆疊,直至於該基板表面形成該高分子膜,該高分子膜係包含數層該高分子基膜,該高分子膜的厚度為至少20nm。在此說明,由於後續之二氧化矽係沉析於該高分子膜中以形成該抗反射膜,而抗反射膜之抗反射效能係與厚度有關,因此,該高分子膜係必須達到特定厚度,若該高分子膜之厚度小於20nm,則無法使後續所形成之該抗反射膜具有明顯之抗反射效果。 After forming two layers of the polymer base film on the surface of the substrate, the repeating step is performed. The repeating step is a step of repeatedly performing the polymer base film stacking step of stacking the first layer of the first charge polymer film and the second charge polymer film formed by the coating solution until the polymer film is formed on the surface of the substrate. The polymer film comprises a plurality of layers of the polymer base film, and the polymer film has a thickness of at least 20 nm. Herein, since the subsequent cerium oxide is precipitated in the polymer film to form the anti-reflective film, and the anti-reflective effect of the anti-reflective film is related to the thickness, the polymer film must reach a specific thickness. If the thickness of the polymer film is less than 20 nm, the anti-reflection film formed subsequently cannot have a significant anti-reflection effect.
製備獲得具有特定厚度之該高分子膜後,係進行該二氧化矽 沉析步驟,即:以該二氧化矽前驅液於該高分子膜中沉析二氧化矽,並生成該抗反射膜。本發明係可以利用該二氧化矽前驅液以各種方式將二氧化矽沉析於該高分子膜,例如:將該二氧化矽前驅液以塗佈或浸漬的方式附著於該高分子膜,較佳以噴塗或浸漬的方式,以加強該二氧化矽前驅液附著於該高分子膜之均勻度。該二氧化矽前驅液係具有一二氧化矽前驅物,該二氧化矽前驅物係可以為具四氧矽基團化合物或具三氧矽基團化合物等可藉由化學反應生成二氧化矽之化合物,並不以上述種類為限。本發明第一實施例係將具有該高分子膜之基板置入莫耳濃度為0.35M之四甲氧基矽烷(tetramethyl orthosilicate,簡稱TMOS)中兩小時,於該高分子膜沉析二氧化矽。 After preparing the polymer film having a specific thickness, the cerium oxide is performed. The precipitation step, that is, the cerium oxide is precipitated in the polymer film by the cerium oxide precursor liquid, and the anti-reflection film is formed. In the present invention, the cerium oxide can be precipitated into the polymer film in various manners by using the cerium oxide precursor liquid, for example, the cerium oxide precursor liquid is attached to the polymer film by coating or immersion. It is preferably sprayed or immersed to enhance the uniformity of adhesion of the cerium oxide precursor to the polymer film. The cerium oxide precursor liquid has a cerium oxide precursor, and the cerium oxide precursor system may be a compound having a tetraoxindole group or a compound having a trioxane group, which can form a cerium oxide by a chemical reaction. The compound is not limited to the above categories. In the first embodiment of the present invention, the substrate having the polymer film is placed in a tetramethyl orthosilicate (TMOS) having a molar concentration of 0.35 M for two hours, and the cerium oxide is precipitated in the polymer film. .
當該二氧化矽前驅液沉析二氧化矽的過程中,二氧化矽前驅液中的-Si(OH)4基團會自然地與該高分子膜中的第一電荷高分子的正電基團(於本發明第一實施例中,正電基團為胺基)產生縮合反應,以於該高分子膜具有正電基團處沉析形成二氧化矽,由於數個該第一電荷高分子膜中係具有數個孔洞,而二氧化矽係沿著該第一電荷高分子膜生長(沿該第一電荷高分子內或表面帶有胺基處),故所生成之該抗反射膜係為多孔性,較佳地,透過本發明抗反射膜之製備方法所生成之該抗反射膜厚度約為80~160nm,讓該抗反射膜在避免光產生反射的同時能夠兼顧光穿透率,使得當該基板為透明時,該抗反射膜可以廣泛地應用於各種領域。 When the cerium oxide precursor liquid precipitates cerium oxide, the -Si(OH)4 group in the cerium oxide precursor liquid naturally reacts with the positively charged group of the first charge polymer in the polymer film. In the first embodiment of the present invention, the positively charged group is an amine group to generate a condensation reaction, so that the polymer film has a positively charged group to precipitate and form cerium oxide, because a plurality of the first charges are high. The molecular film has a plurality of pores, and the cerium oxide is grown along the first charged polymer film (along the amine or the surface of the first charge polymer), so the anti-reflective film is formed. Preferably, the thickness of the anti-reflection film formed by the preparation method of the anti-reflection film of the present invention is about 80-160 nm, so that the anti-reflection film can simultaneously achieve light transmittance while avoiding light reflection. The anti-reflection film can be widely applied to various fields when the substrate is transparent.
當該高分子膜中沉析二氧化矽後,根據基板、第一電荷高分子、第二電荷高分子的種類以及考量後續用途,本發明之抗反射膜之製備方法另可以包含該高分子膜去除步驟,以進一步地去除沉析有二氧化矽之基板中的該高分子膜,並提升該抗反射膜中的孔洞性。例如可以加熱燒結至該高分子膜之分解溫度,使該高分子於高溫環境下自然分解以去除該高分子膜,惟去除該高分子膜的方式並不以此為限。舉例來說:於本發明第 一實施例中,該基板材質為玻璃,玻璃因耐熱性強而適於進一步燒結,因此可以將經該二氧化矽沉析步驟之基板續於550℃進行燒結8小時,藉此移除該高分子膜,但第二實施例中,該基板材質為PMMA,則不適合加熱去除該高分子膜。在此需要說明的是,無論是否除去該高分子膜,該基板上所沉析之二氧化矽已使該基板表面具有抗反射效果。 After the cerium oxide is precipitated in the polymer film, the method for preparing the antireflection film of the present invention may further comprise the polymer film according to the type of the substrate, the first charge polymer, the second charge polymer, and the subsequent use. The removing step further removes the polymer film in the substrate in which the cerium oxide is precipitated, and enhances the porosity in the anti-reflecting film. For example, it can be heated and sintered to the decomposition temperature of the polymer film, and the polymer is naturally decomposed in a high temperature environment to remove the polymer film. However, the method of removing the polymer film is not limited thereto. For example: in the present invention In one embodiment, the substrate is made of glass, and the glass is suitable for further sintering because of high heat resistance. Therefore, the substrate subjected to the ceria precipitation step can be sintered at 550 ° C for 8 hours, thereby removing the height. Molecular film, but in the second embodiment, the substrate material is PMMA, and it is not suitable for heating and removing the polymer film. It should be noted here that whether or not the polymer film is removed, the cerium oxide precipitated on the substrate has an anti-reflection effect on the surface of the substrate.
是以,本發明係透過該第一電荷高分子溶液及該第二電荷高分子溶液,於該基板上交錯生成數個該第一電荷高分子膜及該第二電荷高分子膜,使數個該高分子基膜堆疊於該基板上,以共同形成厚度至少為20nm之該高分子膜,並且以該二氧化矽前驅液於該高分子膜中沉析二氧化矽,另可以包含該高分子膜去除步驟以進一步移除該基板表面之高分子膜。該抗反射膜係設於該基板表面,具有提高基板抗反射效能之功效,再者,該高分子膜及二氧化矽之沉析係透過溶液法製程,不但藉由簡易地操作步驟即可製備該抗反射膜,也使得該抗反射膜可以形成於各式形狀之該基板表面上。 Therefore, in the present invention, the first charge polymer solution and the second charge polymer solution are interleaved to form a plurality of the first charge polymer film and the second charge polymer film on the substrate, so that several The polymer base film is stacked on the substrate to jointly form the polymer film having a thickness of at least 20 nm, and the ceria precursor is used to precipitate cerium oxide in the polymer film, and the polymer may be further included. A film removal step to further remove the polymer film on the surface of the substrate. The anti-reflection film is disposed on the surface of the substrate, and has the effect of improving the anti-reflection performance of the substrate. Further, the deposition of the polymer film and the cerium oxide is carried out by a solution process, which can be prepared not only by a simple operation procedure but also by a simple operation step. The anti-reflection film also allows the anti-reflection film to be formed on the surface of the substrate of various shapes.
為了證實本發明抗反射膜之製備方法確實可以用以製備具有抗反射效能之抗反射膜,係進行以下試驗: In order to confirm that the preparation method of the antireflection film of the present invention can be used to prepare an antireflection film having antireflection performance, the following tests are carried out:
(A)堆疊層數與高分子膜厚度之關係 (A) Relationship between the number of stacked layers and the thickness of the polymer film
本試驗係以薄膜量測儀測量不同堆疊層數下的高分子膜厚度,透過接收光在該高分子膜的反射及折射所產生的相消性干涉光譜,模擬獲得該高分子膜之厚度。本試驗係以第一實施例中所生成之該高分子膜進行量測,其中,以不同單體重複數及接枝率的PLD作為第一電荷高分子,且控制該第一電荷高分子溶液之pH值為5及7.4,其所獲得之層數-厚度分析分別呈現如第1a及1b圖,各組別詳列於表1。該層數係為該高分子基膜的個數。 In this test, the thickness of the polymer film under different stacking layers is measured by a film measuring instrument, and the thickness of the polymer film is simulated by the destructive interference spectrum generated by the reflection and refraction of the received light in the polymer film. The test is carried out by measuring the polymer film formed in the first embodiment, wherein PLDs having different monomer repetition numbers and graft ratios are used as the first charge polymer, and the first charge polymer solution is controlled. The pH values were 5 and 7.4, and the layer-thickness analysis obtained was as shown in Figures 1a and 1b, respectively, and the respective groups are detailed in Table 1. The number of layers is the number of the polymer base film.
表1:試驗(A)各組別之對應表
請參照第1a、1b圖所示,不論該第一電荷高分子之單體重複數、接枝率及該第一電荷高分子溶液的pH值為何,該高分子膜之厚度皆與堆疊層數成正相關,意即隨堆疊層數增加,該高分子膜之厚度隨之成長。由圖還可觀察到當該高分子基膜堆疊層數為4層時,該高分子膜的厚度約為20nm,恰好為本發明所限定之該高分子膜之最低厚度要求。 Referring to Figures 1a and 1b, regardless of the monomer number of the first charge polymer, the graft ratio, and the pH of the first charge polymer solution, the thickness of the polymer film is equal to the number of stacked layers. Positive correlation, that is, as the number of stacked layers increases, the thickness of the polymer film grows. It can also be observed from the figure that when the number of layers of the polymer base film stack is four, the thickness of the polymer film is about 20 nm, which is the minimum thickness requirement of the polymer film as defined in the present invention.
(B)該抗反射膜之多孔性 (B) Porosity of the antireflection film
本試驗係取第A5a組之堆疊層數為8層之高分子膜,續進行二氧化矽之沉析,並燒結去除該高分子膜後,將所得之該抗反射膜拍攝掃描式電子顯微鏡之影像,其俯視圖及剖面圖分別如第2a及2b圖所示。SEM影像清楚呈現該抗反射膜內具有數個孔洞,即該抗反射膜具有多孔性。 In this test, a polymer film having a stacking layer of 8 layers in the A5a group is taken, and the precipitation of cerium oxide is continued, and after the polymer film is removed by sintering, the obtained antireflection film is photographed by a scanning electron microscope. The top view and the cross-sectional view of the image are shown in Figures 2a and 2b, respectively. The SEM image clearly shows that there are several holes in the anti-reflection film, that is, the anti-reflection film has porosity.
另將由不同種類之該第一電荷高分子及不同pH值之第一電荷高分子溶液所製得之抗反射膜,量測其孔隙度及折射率與pH值的關係並呈現於下表2。其中,第B1~B2組之該第一電荷高分子為單體重複數170,接枝率0.2之PLD,第B3~B5組之該第一電荷高分子為PLL-b-PS。其中,孔隙度(P)數值係由量測孔洞材料折射率(np)及材料本身折射率(n),經式(1)計算獲得。 Further, the anti-reflection film prepared by different kinds of the first charge polymer and the first charge polymer solution of different pH values was measured for the relationship between the porosity and the refractive index and the pH value and is shown in Table 2 below. The first charge polymer in the B1 to B2 group is a monomer repeat number of 170, a graft ratio of 0.2 PLD, and the first charge polymer of the B3 to B5 group is PLL-b-PS. Among them, the porosity (P) value is obtained by measuring the refractive index (np) of the hole material and the refractive index (n) of the material itself, and is calculated by the formula (1).
(np 2-1)/(n2-1)=1-p/100 …式(1) (n p 2 -1)/(n 2 -1)=1-p/100 (1)
由表2可知當該第一電荷高分子為PLD時,該第一電荷高分子溶液之pH值對所成形之該抗反射膜的孔隙度影響甚鉅,然而當該第一電荷高分子為PLL-b-PS時,該抗反射膜的成形較不受pH值的影響,於第一電荷高分子溶液的pH值3~7皆具有良好的孔隙度。 It can be seen from Table 2 that when the first charge polymer is PLD, the pH of the first charge polymer solution has a great influence on the porosity of the formed anti-reflection film, but when the first charge polymer is a PLL In the case of -b-PS, the formation of the antireflection film is not affected by the pH value, and the pH of the first charge polymer solution has a good porosity of 3 to 7.
(C)二氧化矽沉析試驗 (C) cerium oxide precipitation test
本試驗係以FTIR針對該高分子膜及該抗反射膜進行分析,分析結果分別如第3圖及第4圖所示。第3圖可明顯觀察到1623cm-1、1645cm-1及1545cm-1皆有明顯的吸收波峰,此訊號係為該第一電荷高分子及該第二電荷高分子所形成之二級結構之特徵訊號;第4圖係為於該高分子膜中沉析二氧化矽,未經燒結即量測該抗反射膜的FTIR圖譜,其中在801cm-1處為Si-O-Si對稱吸收峰,1092,1207cm-1處為Si-O-Si非對稱結構峰,而960cm-1處則是Si-O-H吸收峰,此吸收峰為二氧化矽之特徵訊號,由第3、4圖之分析結果能夠證實本發明抗反射膜之製備方法確實可以利用二氧化矽前驅液將二氧化矽結合於該基板上。 In this test, the polymer film and the antireflection film were analyzed by FTIR, and the analysis results are shown in Fig. 3 and Fig. 4, respectively. It can be clearly observed in Fig. 3 that there are obvious absorption peaks at 1623cm-1, 1645cm-1 and 1545cm-1. This signal is characteristic of the secondary structure formed by the first charge polymer and the second charge polymer. Figure 4 shows the precipitation of cerium oxide in the polymer film, and the FTIR spectrum of the anti-reflective film is measured without sintering. The symmetry absorption peak of Si-O-Si at 801 cm-1 is 1092. At 1207cm-1, it is a Si-O-Si asymmetric structure peak, and at 960cm-1, it is a Si-OH absorption peak. This absorption peak is a characteristic signal of cerium oxide. The analysis results of Figures 3 and 4 can It was confirmed that the preparation method of the antireflection film of the present invention can surely bond cerium oxide to the substrate by using a cerium oxide precursor.
(D)由第一實施例製得之抗反射膜的穿透率量測試驗 (D) Measurement of penetration rate of antireflection film prepared by the first embodiment
由於反射率會受到表面粗糙度的影響,量測結果無法忠實反映實際抗反射情況,因此本試驗係透過觀察穿透率的變化,以證實該抗反射膜具有高穿透度及良好的抗反射效果,並探討由不同堆疊層數(層數計算方式如試驗(A))之該高分子膜所形成之抗反射膜的穿透率變化。本試驗係以第一實施例所獲得之抗反射膜進行測試(即:第一電荷高分子為PLD、第二電荷高分子為PGA、該基板材質為玻璃)。在此係將不同單體重複數及接枝率之PLD所製成之該抗反射膜區分為D-1、D-2、D-3三個子試驗組,並探討如下。 Since the reflectance is affected by the surface roughness, the measurement results cannot faithfully reflect the actual anti-reflection. Therefore, this test examines the change in transmittance to confirm that the anti-reflection film has high penetration and good anti-reflection. The effect and the change in the transmittance of the antireflection film formed by the polymer film of different stacked layers (layer number calculation method such as test (A)) were examined. This test was carried out by the antireflection film obtained in the first embodiment (that is, the first charge polymer was PLD, the second charge polymer was PGA, and the substrate material was glass). Here, the antireflection film made of PLDs having different monomer repetition numbers and graft ratios was divided into three sub-test groups of D-1, D-2, and D-3, and the following were discussed.
(D-1)單體重複數=70,接枝率=0.2的PLD所製成之該高分子膜的穿透率測試 (D-1) Permeability test of the polymer film prepared by PLD having monomer repeat number = 70 and graft ratio = 0.2
本子試驗係針對以8層(第D1組)及10層(第D2組)層數之高分子膜所製得之抗反射膜量測各組之光穿透率,並以材質為玻璃之基板做為對照組(第D0組),穿透率圖譜係呈現於第5圖。由圖可知本發明第D1組之抗反射膜在可見光範圍內之穿透率高於對照組,而第D2組則在波長為450~800nm之範圍內穿透率較對照組有明顯提升,由穿透率(T%)=1-反射率(R%)之公式可以得知:因反射率下降使穿透率提高,由此證實本發明之該抗反射膜確實可以提高具有該抗反射膜之基板的抗反射率。 This sub-test measures the light transmittance of each group with an anti-reflection film made of a polymer film of 8 layers (D1 group) and 10 layers (D2 group), and is made of a glass substrate. As a control group (Group D0), the penetration map is shown in Figure 5. It can be seen from the figure that the transmittance of the anti-reflection film of the D1 group in the visible light range is higher than that of the control group, and the transmittance of the D2 group in the wavelength range of 450-800 nm is significantly higher than that of the control group. The formula of the transmittance (T%) = 1 - reflectance (R%) can be known that the transmittance is increased due to the decrease in reflectance, thereby confirming that the antireflection film of the present invention can indeed improve the antireflection film. The antireflection rate of the substrate.
(D-2)單體重複數=170,接枝率=0.4的PLD所製成之該高分子膜的穿透率測試 (D-2) Permeability test of the polymer film prepared by PLD having monomer repeat number = 170 and graft ratio = 0.4
本子試驗係針對以8層(第D3組)及10層(第D4組)層數之高分子膜所製得之抗反射膜量測各組之光穿透率,並以材質為玻璃之基板做為對照組(第D0組),各組所得之波長400~800nm穿透率圖譜係呈現於第6圖。由圖可知本發明第D3組之抗反射膜於可見光範圍之穿透率高於對照組,特別比較550nm之穿透率,該抗反射膜可以將穿透率由原 本(對照組)的92%提升至98%,第D4組之抗反射效果增益雖未較第D3組出色,但在波長550~800nm的範圍內亦可明顯觀察到其穿透率較對照組明顯增加。 This sub-test measures the light transmittance of each group against an anti-reflection film made of a polymer film of 8 layers (D3 group) and 10 layers (D4 group), and is made of a glass substrate. As a control group (Group D0), the transmittance of 400 to 800 nm obtained from each group is shown in Fig. 6. It can be seen from the figure that the antireflection film of the group D3 of the present invention has a higher transmittance in the visible light range than the control group, and particularly compares the transmittance of 550 nm, and the antireflection film can reflect the transmittance from the original 92% of this (control group) increased to 98%, although the anti-reflection gain of the D4 group was not better than that of the D3 group, but the penetration rate was also clearly observed in the range of 550-800 nm compared with the control group. obviously increase.
(D-3)單體重複數=340,接枝率=0.4的PLD所製成之該高分子膜的穿透率測試 (D-3) Permeability test of the polymer film prepared by PLD having monomer repeat number = 340 and graft ratio = 0.4
本子試驗係針對以4層(第D5組)及8層(第D6組)層數之高分子膜所製得之抗反射膜進行穿透率量測,並以材質為玻璃之基板做為對照組(第D0組),各組所得之波長300~800nm穿透率圖譜係呈現於第7圖。由圖可知本發明第D5及D6組之抗反射膜於可見光範圍之穿透率皆高於對照組,特別由第D5組之分析可以證實當該高分子膜之堆疊層數為4層時,在經沉析二氧化矽所獲得該抗反射膜即具有顯著之抗反射效能,返回映證試驗(A)之結果,可以發現由厚度約為20~30nm之高分子膜製備而得之抗反射膜擁有良好的抗反射能力。 This sub-test is conducted on the anti-reflection film prepared by polymer film of 4 layers (D5 group) and 8 layers (D6 group), and the substrate is made of glass. The group (Group D0), the wavelength of 300 to 800 nm obtained by each group is shown in Figure 7. It can be seen from the figure that the antireflection film of the D5 and D6 groups of the present invention has higher transmittance in the visible light range than the control group, and in particular, the analysis of the D5 group can confirm that when the number of stacked layers of the polymer film is 4 layers, The antireflection film obtained by the precipitation of cerium oxide has remarkable anti-reflection performance, and as a result of the return-reflection test (A), it can be found that the anti-reflection is prepared from a polymer film having a thickness of about 20 to 30 nm. The film has good anti-reflection ability.
請再參照第8圖所示,係比較堆疊層數為8層之高分子膜所製得之抗反射膜的穿透率,除第D1、D3及D6組與第D0組外,在此圖中更加入第D7組及第D8組之穿透率數據進行穿透率比較分析,其中,第D7組係由單體重複數170、接枝率0.2之PLD所製成之抗反射膜,第D8組係由單體重複數340、接枝率0.2之PLD所製成之抗反射膜。第D1、D3、D6及D8組在可見光範圍的穿透率皆大於對照組,而第D7組則在530~800nm的波長範圍內之穿透度高於第D0組。 Please refer to Fig. 8 again to compare the transmittance of the anti-reflection film prepared by stacking 8 layers of polymer film, except for the D1, D3, and D6 groups and the D0 group. The penetration rate data of the D7 group and the D8 group were compared and analyzed for the penetration rate. The D7 group was an anti-reflection film made of a PLD having a monomer number of 170 and a graft ratio of 0.2. The D8 group is an antireflection film made of a PLD having a monomer repeat number of 340 and a graft ratio of 0.2. The transmittances of the D1, D3, D6 and D8 groups in the visible light range were larger than those of the control group, while the D7 group had a higher transmittance in the wavelength range of 530-800 nm than the D0 group.
另將第D1、D2、D3、D4、D6組之穿透率、穿透光譜之波峰波長、反射率、厚度、反射係數(reflective index)、粗糙度(roughness)及孔隙度(porosity)等數據呈現於下表3,由表3之數據,可以得知光線於該抗反射膜之穿透度大致與該抗反射膜的孔隙率呈正相關。 In addition, the transmittance of the D1, D2, D3, D4, and D6 groups, the peak wavelength of the transmission spectrum, the reflectance, the thickness, the reflectance index, the roughness, and the porosity are also included. It is shown in Table 3 below. From the data of Table 3, it can be known that the transmittance of light on the anti-reflection film is substantially positively correlated with the porosity of the anti-reflection film.
表3:各組之測試結果數據
(E)由第二實施例製得之抗反射膜的穿透率量測試驗 (E) Measurement of the transmittance of the antireflection film prepared by the second embodiment
本試驗係比較堆疊層數為5層之高分子膜所製得之抗反射膜(第E1組)與對照組(第E0組)的穿透率,且以第二實施例所獲得之抗反射膜進行測試(即:第一電荷高分子為PLL-b-PS、第二電荷高分子為PGA、該基板材質為PMMA),將結果呈現於第9圖。試驗結果說明第二實施例之該抗反射膜亦能夠有效提升具有該抗反射膜之基板之抗反射效果。 This test compares the transmittance of the antireflection film (Group E1) and the control group (Group E0) obtained by stacking a polymer film having 5 layers, and the antireflection obtained in the second embodiment. The film was tested (ie, the first charge polymer was PLL-b-PS, the second charge polymer was PGA, and the substrate material was PMMA), and the results are shown in FIG. The test results show that the anti-reflection film of the second embodiment can also effectively enhance the anti-reflection effect of the substrate having the anti-reflection film.
請再參照第10圖所示,材質為玻璃之基板右側係透過本發明抗反射膜之製備方法,將該抗反射膜結合於該基板右側表面上,而該基板之左側則為未經任何處理之基板,由肉眼即可明顯觀察到具有抗反射膜之基板大幅降低反射光的產生,使該基板下方之文字清晰可見。 Referring to FIG. 10 again, the right side of the substrate made of glass is passed through the preparation method of the anti-reflection film of the present invention, and the anti-reflection film is bonded to the right side surface of the substrate, and the left side of the substrate is not treated. The substrate can be clearly observed by the naked eye, and the substrate having the anti-reflection film greatly reduces the generation of reflected light, so that the text below the substrate is clearly visible.
綜上所述,本發明抗反射膜之製備方法係於該基板表面上,依序進行該高分子基膜形成步驟、該高分子基膜堆疊步驟及該重複步驟,以將該高分子膜成形於該基板表面,接著透過該二氧化矽沉析步驟以形成該抗反射膜。有鑒於本發明之抗反射膜之製備方法係以溶液製程,將該第一電荷高分子膜及該第二電荷高分子膜層層交錯堆疊,步驟簡單且不需使 用大型、精密、昂貴及耗能之基台即可進行,相較於習用以製備抗反射膜之真空鍍膜法,本發明係可以大幅簡化該抗反射膜製程,進而達到降低該抗反射膜之製程成本之功效。 In summary, the method for preparing the anti-reflection film of the present invention is performed on the surface of the substrate, and the polymer base film forming step, the polymer base film stacking step, and the repeating step are sequentially performed to form the polymer film. The surface of the substrate is then passed through the cerium oxide precipitation step to form the anti-reflective film. In view of the method for preparing the anti-reflection film of the present invention, the first charge polymer film and the second charge polymer film layer are alternately stacked in a solution process, and the steps are simple and need not be The invention can be carried out by using a large, precise, expensive and energy-consuming abutment. Compared with the vacuum coating method which is conventionally used for preparing an anti-reflection film, the present invention can greatly simplify the process of the anti-reflection film, thereby reducing the anti-reflection film. The cost of process costs.
又,本發明之抗反射膜之製備方法係利用液態之該第一電荷高分子、該第二電荷高分子及該二氧化矽前驅物對該基板進行處理,因此可於各式形狀之該基材表面上生成該抗反射膜,進而達到增加製得之該抗反射膜應用性之功效。 Moreover, the method for preparing the antireflection film of the present invention processes the substrate by using the first charge polymer, the second charge polymer and the ceria precursor in a liquid state, so that the substrate can be formed in various shapes. The anti-reflection film is formed on the surface of the material to further increase the applicability of the anti-reflection film obtained.
雖然本發明已利用上述較佳實施例揭示,然其並非用以限定本發明,任何熟習此技藝者在不脫離本發明之精神和範圍之內,相對上述實施例進行各種更動與修改仍屬本發明所保護之技術範疇,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。 While the invention has been described in connection with the preferred embodiments described above, it is not intended to limit the scope of the invention. The technical scope of the invention is protected, and therefore the scope of the invention is defined by the scope of the appended claims.
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