TWI551196B - An inductively coupled plasma antenna unit, and an inductively coupled plasma processing device - Google Patents
An inductively coupled plasma antenna unit, and an inductively coupled plasma processing device Download PDFInfo
- Publication number
- TWI551196B TWI551196B TW101120288A TW101120288A TWI551196B TW I551196 B TWI551196 B TW I551196B TW 101120288 A TW101120288 A TW 101120288A TW 101120288 A TW101120288 A TW 101120288A TW I551196 B TWI551196 B TW I551196B
- Authority
- TW
- Taiwan
- Prior art keywords
- antenna
- rectangular
- inductively coupled
- coupled plasma
- antennas
- Prior art date
Links
- 238000012545 processing Methods 0.000 title claims description 124
- 238000009616 inductively coupled plasma Methods 0.000 title claims description 52
- 239000000758 substrate Substances 0.000 claims description 71
- 230000007246 mechanism Effects 0.000 claims description 17
- 230000005684 electric field Effects 0.000 claims description 16
- 238000004804 winding Methods 0.000 claims description 10
- 238000009832 plasma treatment Methods 0.000 claims description 9
- 230000008878 coupling Effects 0.000 claims description 2
- 238000010168 coupling process Methods 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims description 2
- 238000009826 distribution Methods 0.000 description 13
- 238000000034 method Methods 0.000 description 8
- 239000010408 film Substances 0.000 description 7
- 238000005530 etching Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 230000003028 elevating effect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
- H01J37/32834—Exhausting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
- H01Q1/364—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith using a particular conducting material, e.g. superconductor
- H01Q1/366—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith using a particular conducting material, e.g. superconductor using an ionized gas
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
- H05H1/4645—Radiofrequency discharges
- H05H1/4652—Radiofrequency discharges using inductive coupling means, e.g. coils
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011127896A JP5666991B2 (ja) | 2011-06-08 | 2011-06-08 | 誘導結合プラズマ用アンテナユニットおよび誘導結合プラズマ処理装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201306671A TW201306671A (zh) | 2013-02-01 |
| TWI551196B true TWI551196B (zh) | 2016-09-21 |
Family
ID=47305296
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101120288A TWI551196B (zh) | 2011-06-08 | 2012-06-06 | An inductively coupled plasma antenna unit, and an inductively coupled plasma processing device |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP5666991B2 (ja) |
| KR (1) | KR101336565B1 (ja) |
| CN (1) | CN102821534B (ja) |
| TW (1) | TWI551196B (ja) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101473371B1 (ko) | 2013-05-07 | 2014-12-16 | 한국표준과학연구원 | 유도 결합 플라즈마 발생용 안테나 구조체 |
| JP6580830B2 (ja) * | 2015-01-22 | 2019-09-25 | 株式会社Ｓｃｒｅｅｎホールディングス | プラズマ処理装置 |
| KR101841739B1 (ko) | 2016-08-31 | 2018-03-23 | 인베니아 주식회사 | 유도 결합 플라즈마 발생용 안테나 |
| KR101848906B1 (ko) | 2016-08-31 | 2018-05-15 | 인베니아 주식회사 | 유도 결합 플라즈마 발생용 안테나 |
| KR101848907B1 (ko) * | 2016-10-04 | 2018-05-15 | 인베니아 주식회사 | 플라즈마 처리 장치 |
| KR101895884B1 (ko) * | 2016-10-05 | 2018-09-07 | 인베니아 주식회사 | 플라즈마 발생용 안테나 및 이를 사용하는 플라즈마 처리 장치 |
| KR101866212B1 (ko) * | 2016-11-16 | 2018-06-12 | 인베니아 주식회사 | 플라즈마 처리 장치 |
| KR101840295B1 (ko) * | 2016-11-23 | 2018-03-20 | (주)얼라이드 테크 파인더즈 | 제1 안테나 및 제2 안테나를 포함하는 플라즈마 장치 |
| KR101866214B1 (ko) * | 2016-12-29 | 2018-06-12 | 인베니아 주식회사 | 플라즈마 발생용 안테나 구조체 |
| KR102161954B1 (ko) * | 2019-06-12 | 2020-10-06 | 인베니아 주식회사 | 유도 결합 플라즈마 처리장치용 안테나 조립체 및 이를 갖는 유도 결합 플라즈마 처리장치 |
| JP2025032728A (ja) | 2023-08-28 | 2025-03-12 | 東京エレクトロン株式会社 | 誘導結合アンテナ、基板処理装置及び基板処理方法 |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW538439B (en) * | 2001-04-23 | 2003-06-21 | Tokyo Electron Ltd | Apparatus and method for improving plasma distribution and performance in an inductively coupled plasma |
| US20050279628A1 (en) * | 2004-06-22 | 2005-12-22 | Mirko Vukovic | Internal antennae for plasma processing with metal plasma |
| US20060065367A1 (en) * | 2004-09-30 | 2006-03-30 | Tokyo Electron Limited | Plasma processing system for treating a substrate |
| TW200823991A (en) * | 2006-07-28 | 2008-06-01 | Tokyo Electron Ltd | Microwave plasma source and plasma processing apparatus |
| US20100041238A1 (en) * | 2001-10-15 | 2010-02-18 | Lam Research Corporation | Tunable multi-zone gas injection system |
| TW201119519A (en) * | 2009-01-14 | 2011-06-01 | Tokyo Electron Ltd | Inductively coupled plasma processing apparatus |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3685461B2 (ja) * | 1993-11-12 | 2005-08-17 | 株式会社日立国際電気 | プラズマ処理装置 |
| JP3880864B2 (ja) * | 2002-02-05 | 2007-02-14 | 東京エレクトロン株式会社 | 誘導結合プラズマ処理装置 |
| JP2007311182A (ja) * | 2006-05-18 | 2007-11-29 | Tokyo Electron Ltd | 誘導結合プラズマ処理装置およびプラズマ処理方法 |
| KR100824974B1 (ko) | 2006-08-17 | 2008-04-28 | (주)아이씨디 | 플라즈마 처리장치의 안테나 |
| JP2006344998A (ja) * | 2006-09-01 | 2006-12-21 | Tokyo Electron Ltd | 誘導結合プラズマ処理装置 |
| KR101418438B1 (ko) * | 2007-07-10 | 2014-07-14 | 삼성전자주식회사 | 플라즈마 발생장치 |
| JP5551343B2 (ja) * | 2008-05-14 | 2014-07-16 | 東京エレクトロン株式会社 | 誘導結合プラズマ処理装置 |
| KR101062461B1 (ko) * | 2009-05-29 | 2011-09-05 | 엘아이지에이디피 주식회사 | 유도결합형 플라즈마 발생장치의 안테나 및 이를 포함하는 유도결합형 플라즈마 발생장치 |
-
2011
- 2011-06-08 JP JP2011127896A patent/JP5666991B2/ja active Active
-
2012
- 2012-05-30 KR KR1020120057484A patent/KR101336565B1/ko active Active
- 2012-06-06 TW TW101120288A patent/TWI551196B/zh active
- 2012-06-08 CN CN201210189576.8A patent/CN102821534B/zh active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW538439B (en) * | 2001-04-23 | 2003-06-21 | Tokyo Electron Ltd | Apparatus and method for improving plasma distribution and performance in an inductively coupled plasma |
| US20100041238A1 (en) * | 2001-10-15 | 2010-02-18 | Lam Research Corporation | Tunable multi-zone gas injection system |
| US20050279628A1 (en) * | 2004-06-22 | 2005-12-22 | Mirko Vukovic | Internal antennae for plasma processing with metal plasma |
| US20060065367A1 (en) * | 2004-09-30 | 2006-03-30 | Tokyo Electron Limited | Plasma processing system for treating a substrate |
| TW200823991A (en) * | 2006-07-28 | 2008-06-01 | Tokyo Electron Ltd | Microwave plasma source and plasma processing apparatus |
| TW201119519A (en) * | 2009-01-14 | 2011-06-01 | Tokyo Electron Ltd | Inductively coupled plasma processing apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20120136289A (ko) | 2012-12-18 |
| JP5666991B2 (ja) | 2015-02-12 |
| TW201306671A (zh) | 2013-02-01 |
| CN102821534B (zh) | 2015-08-05 |
| KR101336565B1 (ko) | 2013-12-03 |
| CN102821534A (zh) | 2012-12-12 |
| JP2012256660A (ja) | 2012-12-27 |
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