TWI546245B - Mems package structure - Google Patents
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- TWI546245B TWI546245B TW103103945A TW103103945A TWI546245B TW I546245 B TWI546245 B TW I546245B TW 103103945 A TW103103945 A TW 103103945A TW 103103945 A TW103103945 A TW 103103945A TW I546245 B TWI546245 B TW I546245B
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- 230000004888 barrier function Effects 0.000 claims description 41
- 239000000758 substrate Substances 0.000 claims description 37
- 239000008393 encapsulating agent Substances 0.000 claims description 28
- 239000000565 sealant Substances 0.000 claims description 19
- 150000001875 compounds Chemical class 0.000 claims description 12
- 238000000465 moulding Methods 0.000 claims description 12
- 239000003990 capacitor Substances 0.000 claims description 4
- 239000003822 epoxy resin Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 229920000647 polyepoxide Polymers 0.000 claims description 3
- 238000007789 sealing Methods 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 8
- 238000004806 packaging method and process Methods 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000000084 colloidal system Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- BCZWPKDRLPGFFZ-UHFFFAOYSA-N azanylidynecerium Chemical compound [Ce]#N BCZWPKDRLPGFFZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 238000001782 photodegradation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Description
本發明是有關於一種晶片封裝結構,且特別是有關於一種微機電系統封裝結構。 This invention relates to a chip package structure, and more particularly to a MEMS package structure.
微機電系統(microelectromechanical system,MEMS)是在微小化的封裝結構中所製作的微機電元件,其製造的技術十分類似於製造積體電路的技術,但微機電元件與其周遭環境互動的方式則多於傳統的積體電路,例如力學、光學或磁力上的互動。 Microelectromechanical systems (MEMS) are microelectromechanical components fabricated in miniaturized package structures. The fabrication techniques are very similar to those used to fabricate integrated circuits, but microelectromechanical components interact with their surrounding environment. In traditional integrated circuits, such as mechanical, optical or magnetic interactions.
微機電元件可包括極小的電子機械元件(例如開關、鏡面、電容器、加速度計、感應器、電容感測器或引動器等),而微機電元件可以單塊方式與積體電路整合,同時大幅改善整個固態裝置的插入損耗及電隔離效果。然而,微機電元件在整個封裝結構的巨觀世界中是極微脆弱的,隨時都可能被微小的靜電或表面張力影響而造成故障。因此,為了避免微機電元件受到污染或損害,通常將密封於晶片與蓋板之間的一空間中。 Microelectromechanical components can include very small electromechanical components (such as switches, mirrors, capacitors, accelerometers, sensors, capacitive sensors, or actuators), while MEMS components can be integrated into integrated circuits in a single block, while Improve insertion loss and electrical isolation of the entire solid state device. However, MEMS components are extremely fragile in the vast world of package structures and can be disrupted at any time by tiny static or surface tensions. Therefore, in order to avoid contamination or damage to the microelectromechanical element, it will typically be sealed in a space between the wafer and the cover.
圖1是習知的一種微機電系統封裝結構的示意圖。請參閱圖,習知的微機電系統封裝結構10包括一蓋板12、一晶片14、 一封膠體16及一微機電元件18。蓋板12藉由封膠體16固定至晶片14,以將微機電元件18密封於晶片14與蓋板12之間的空間中。 1 is a schematic diagram of a conventional MEMS package structure. Referring to the drawings, a conventional MEMS package structure 10 includes a cover 12, a wafer 14, A colloid 16 and a microelectromechanical component 18 are provided. The cover 12 is secured to the wafer 14 by a sealant 16 to seal the microelectromechanical element 18 in the space between the wafer 14 and the cover 12.
然而,雖然在習知的微機電系統封裝結構10中晶片14與蓋板12之間的空間被封膠體16所密封,但由於蓋板12與晶片14之間具有較大的間隙,當習知的微機電系統封裝結構10在高濕度環境下使用一段時間之後,封膠體16較容易龜裂而使得濕氣輕易地滲入晶片14與蓋板12之間的空間中,進而導致微機電元件18故障。 However, although the space between the wafer 14 and the cover 12 is sealed by the encapsulant 16 in the conventional MEMS package structure 10, since there is a large gap between the cover 12 and the wafer 14, it is known After the MEMS package structure 10 is used for a period of time in a high humidity environment, the sealant 16 is more likely to be cracked, so that moisture easily penetrates into the space between the wafer 14 and the cover plate 12, thereby causing the MEMS element 18 to malfunction. .
本發明提供一種微機電系統封裝結構,其具有較佳的抗濕氣能力。 The invention provides a microelectromechanical system package structure which has better moisture resistance.
本發明的一種微機電系統封裝結構,包括一晶片、一微機電元件、一蓋板、一封膠體及一第一濕氣阻隔層。晶片具有一主動表面。微機電元件配置於主動表面上。蓋板覆蓋於晶片且包括一凹穴,其中微機電元件位於凹穴內。封膠體設置於晶片與蓋板之間以密封凹穴,其中封膠體的厚度小於微機電元件的高度。第一濕氣阻隔層包覆於晶片、封膠體及蓋板的周圍。 A MEMS packaging structure of the present invention includes a wafer, a microelectromechanical component, a cover, a gel, and a first moisture barrier layer. The wafer has an active surface. The MEMS element is disposed on the active surface. The cover plate covers the wafer and includes a recess in which the microelectromechanical component is located. The encapsulant is disposed between the wafer and the cover to seal the recess, wherein the sealant has a thickness smaller than a height of the microelectromechanical component. The first moisture barrier layer is wrapped around the wafer, the encapsulant, and the cover.
在本發明的一實施例中,更包括一第一基板、一第二基板以及一第二濕氣阻隔層。第一基板具有一孔洞,其中晶片、微機電元件、蓋板、封膠體及第一濕氣阻隔層設置於孔洞內。第二基板設置於第一基板上以覆蓋孔洞。第二濕氣阻隔層密封第一基 板與第二基板之間的一交界區。 In an embodiment of the invention, a first substrate, a second substrate, and a second moisture barrier layer are further included. The first substrate has a hole, wherein the wafer, the MEMS element, the cover plate, the encapsulant and the first moisture barrier layer are disposed in the hole. The second substrate is disposed on the first substrate to cover the hole. The second moisture barrier layer seals the first base An interface between the board and the second substrate.
在本發明的一實施例中,更包括一模製化合物,設置在孔洞內且密封於第一濕氣阻隔層的周圍。 In an embodiment of the invention, a molding compound is further included, disposed in the cavity and sealed around the first moisture barrier layer.
在本發明的一實施例中,上述的模製化合物在第一濕氣阻隔層上的一投影區域覆蓋封膠體在第一濕氣阻隔層上的一投影區域。 In an embodiment of the invention, a projection area of the molding compound on the first moisture barrier layer covers a projection area of the encapsulant on the first moisture barrier layer.
在本發明的一實施例中,更包括一濕氣吸收元件,設置於孔洞內。 In an embodiment of the invention, a moisture absorbing member is further disposed in the hole.
在本發明的一實施例中,上述的第二基板具有一覆蓋封膠體的區域。 In an embodiment of the invention, the second substrate has a region covering the encapsulant.
在本發明的一實施例中,上述的凹穴具有相對於主動表面的一上表面,該微機電裝置包括一鏡子,該主動表面與該上表面之間的距離大於該鏡子的傾斜高度。 In an embodiment of the invention, the recess has an upper surface relative to the active surface, and the MEMS device includes a mirror, the distance between the active surface and the upper surface being greater than the tilt height of the mirror.
在本發明的一實施例中,上述的封膠體的厚度約在1微米至10微米之間。 In an embodiment of the invention, the sealant has a thickness of between about 1 micrometer and 10 micrometers.
在本發明的一實施例中,上述的微機電元件包括一鏡子、一開關、一電容器、一加速度計、一感應器或一引動器。 In an embodiment of the invention, the MEMS element comprises a mirror, a switch, a capacitor, an accelerometer, an inductor or an actuator.
在本發明的一實施例中,上述的封膠體的材料包括環氧樹脂。 In an embodiment of the invention, the material of the above-mentioned encapsulant comprises an epoxy resin.
基於上述,本發明之微機電系統封裝結構透過蓋板的中央部位具有凹穴,凹穴可供微機電元件容置的設計,降低蓋板周圍與晶片之間的間隙高度,且透過封膠體配置於蓋板周圍與晶片 之間的間隙以密封凹穴。由於蓋板周圍與晶片之間的間隙較小,封膠體的尺寸不需太大,因此較不易龜裂,而使得本發明之微機電系統封裝結構具有較佳的抗濕氣能力。此外,本發明之微機電系統封裝結構透過第一濕氣阻隔層包覆於晶片、蓋板及封膠體的周圍,以避免濕氣進入凹穴,有效提供第二重保護。另外,本發明之微機電系統封裝結構更藉由將晶片、微機電元件、蓋板、封膠體與第一濕氣阻隔層配置於被第一基板與第二基板所包圍的孔洞內,並藉由第二濕氣阻隔層密封第一基板與第二基板的交界區,以提供阻隔濕氣的第三重保護。並且,本發明之微機電系統封裝結構透過將模製化合物設置於孔洞內並且黏附於第一濕氣阻隔層的四周,以提供阻隔濕氣的第四重保護。再者,本發明之微機電系統封裝結構藉由將濕氣吸收元件設置於孔洞內,以吸收孔洞內的濕氣,而提供第五重保護。 Based on the above, the MEMS package structure of the present invention has a recess through the central portion of the cover plate, and the recess can be used for accommodating the MEMS component, reducing the gap height between the cover and the wafer, and transmitting through the sealant. Around the cover and the wafer The gap between them is to seal the pocket. Since the gap between the periphery of the cover plate and the wafer is small, the size of the sealant does not need to be too large, so that it is less likely to be cracked, so that the MEMS package structure of the present invention has better moisture resistance. In addition, the MEMS package structure of the present invention is coated around the wafer, the cover plate and the encapsulant through the first moisture barrier layer to prevent moisture from entering the recess and effectively providing the second weight protection. In addition, the MEMS package structure of the present invention further comprises disposing a wafer, a MEMS element, a cover plate, a sealant and a first moisture barrier layer in a hole surrounded by the first substrate and the second substrate, and borrowing A boundary region between the first substrate and the second substrate is sealed by the second moisture barrier layer to provide a third weight protection against moisture. Moreover, the MEMS package structure of the present invention provides a fourth weight protection against moisture by placing a molding compound in the cavity and adhering to the periphery of the first moisture barrier layer. Furthermore, the MEMS package structure of the present invention provides a fifth weight protection by arranging moisture absorbing elements in the holes to absorb moisture in the holes.
為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。 The above described features and advantages of the invention will be apparent from the following description.
D‧‧‧距離 D‧‧‧Distance
H‧‧‧高度 H‧‧‧ Height
10‧‧‧習知的微機電系統封裝結構 10‧‧‧Learly MEMS packaging structure
12‧‧‧蓋板 12‧‧‧ Cover
14‧‧‧晶片 14‧‧‧ wafer
16‧‧‧封膠體 16‧‧‧ Sealant
18‧‧‧微機電元件 18‧‧‧Microelectromechanical components
100、200、300‧‧‧微機電系統封裝結構 100, 200, 300‧‧‧Microelectromechanical system package structure
110、210‧‧‧晶片 110, 210‧‧‧ wafer
112‧‧‧主動表面 112‧‧‧Active surface
120、220、320‧‧‧微機電元件 120, 220, 320‧‧‧ microelectromechanical components
130、230‧‧‧蓋板 130, 230‧‧ ‧ cover
132、232、332‧‧‧凹穴 132, 232, 332‧‧ ‧ pocket
132a‧‧‧上表面 132a‧‧‧ upper surface
140、240、340‧‧‧封膠體 140, 240, 340‧‧‧ Sealant
150、250、350‧‧‧第一濕氣阻隔層 150, 250, 350‧‧‧ first moisture barrier
260、360‧‧‧第一基板 260, 360‧‧‧ first substrate
262、362‧‧‧孔洞 262, 362‧‧ holes
270、370‧‧‧第二基板 270, 370‧‧‧ second substrate
272‧‧‧區域 272‧‧‧Area
280‧‧‧第二濕氣阻隔層 280‧‧‧Second moisture barrier
390‧‧‧模製化合物 390‧‧‧Molding compounds
395‧‧‧濕氣吸收元件 395‧‧‧Moisture absorption element
圖1是習知的一種微機電系統封裝結構的示意圖。 1 is a schematic diagram of a conventional MEMS package structure.
圖2是依照本發明的一實施例的一種微機電系統封裝結構的示意圖。 2 is a schematic diagram of a MEMS system package structure in accordance with an embodiment of the invention.
圖3是依照本發明的另一實施例的一種微機電系統封裝結構 的示意圖。 3 is a MEMS package structure in accordance with another embodiment of the present invention. Schematic diagram.
圖4是依照本發明的再一實施例的一種微機電系統封裝結構的示意圖。 4 is a schematic diagram of a microelectromechanical system package structure in accordance with still another embodiment of the present invention.
下面將配合圖式詳細地敘述本發明的數個較佳實施例。圖2是依照本發明的一實施例的一種微機電系統封裝結構的示意圖。請參閱圖2,本實施例之微機電系統封裝結構100包括一晶片110、一微機電元件120、一蓋板130、一封膠體140及一第一濕氣阻隔層150。晶片110具有一主動表面112。晶片110例如是電荷耦合元件(CCD)或互補金屬氧化半導體(CMOS)之類的光感測晶片,而主動表面112例如是光感測區,但晶片110與主動表面112的種類不以此為限制。 Several preferred embodiments of the present invention will now be described in detail in conjunction with the drawings. 2 is a schematic diagram of a MEMS system package structure in accordance with an embodiment of the invention. Referring to FIG. 2 , the MEMS package structure 100 of the present embodiment includes a wafer 110 , a microelectromechanical component 120 , a cover 130 , a gel 140 , and a first moisture barrier layer 150 . Wafer 110 has an active surface 112. The wafer 110 is, for example, a light sensing wafer such as a charge coupled device (CCD) or a complementary metal oxide semiconductor (CMOS), and the active surface 112 is, for example, a light sensing region, but the type of the wafer 110 and the active surface 112 is not limit.
微機電元件120配置於主動表面112上。在本實施例中,微機電元件120為鏡子,但在其他實施例中,微機電元件120亦可為開關、電容器、加速度計、感應器或引動器,微機電元件120之種類不以此為限制。 The microelectromechanical component 120 is disposed on the active surface 112. In this embodiment, the microelectromechanical component 120 is a mirror, but in other embodiments, the microelectromechanical component 120 can also be a switch, a capacitor, an accelerometer, an inductor, or a deflector, and the type of the microelectromechanical component 120 is not limit.
在本實施例中,蓋板130為透明蓋板,以使外界光線(未繪示)可以穿過蓋板130而傳遞至微機電元件120及晶片110的主動表面112。如圖2所示,蓋板130覆蓋於晶片110且包括一凹穴132,微機電元件120位於凹穴132內。凹穴132具有相對於主動表面112的一上表面132a,在本實施例中,主動表面112與上 表面132a之間的一距離D大於微機電元件120的高度(也就是鏡子的傾斜高度)。在本實施例中,主動表面112與上表面132a之間的距離D約為10微米,而蓋板130周圍與晶片110之間的一間隙的高度H約在1微米至10微米的範圍之間。也就是說,蓋板130周圍與晶片110之間的間隙的高度H小於主動表面112與上表面132a之間的距離D。 In the present embodiment, the cover plate 130 is a transparent cover plate so that external light (not shown) can be transmitted through the cover plate 130 to the microelectromechanical element 120 and the active surface 112 of the wafer 110. As shown in FIG. 2, the cover plate 130 covers the wafer 110 and includes a recess 132 in which the microelectromechanical component 120 is located. The pocket 132 has an upper surface 132a relative to the active surface 112. In this embodiment, the active surface 112 and the upper surface A distance D between the surfaces 132a is greater than the height of the microelectromechanical element 120 (i.e., the tilt height of the mirror). In the present embodiment, the distance D between the active surface 112 and the upper surface 132a is about 10 microns, and the height H of a gap between the cover plate 130 and the wafer 110 is between about 1 micrometer and 10 micrometers. . That is, the height H of the gap between the cover plate 130 and the wafer 110 is smaller than the distance D between the active surface 112 and the upper surface 132a.
如圖2所示,封膠體140設置於蓋板130周圍與晶片110之間的間隙以密封凹穴132a。封膠體140的厚度小於微機電元件120的高度。由圖面上可知,封膠體140的厚度受限於蓋板130周圍與晶片110之間的間隙的高度H,因此,封膠體140的厚度會隨著蓋板130周圍與晶片110之間的間隙的高度H而異。在本實施例中,封膠體140的厚度範圍約在1微米至10微米之間。 As shown in FIG. 2, the encapsulant 140 is disposed at a gap between the cover plate 130 and the wafer 110 to seal the recess 132a. The thickness of the encapsulant 140 is less than the height of the microelectromechanical element 120. As can be seen from the drawing, the thickness of the encapsulant 140 is limited by the height H of the gap between the periphery of the cap plate 130 and the wafer 110. Therefore, the thickness of the encapsulant 140 varies with the gap between the periphery of the cap plate 130 and the wafer 110. The height H varies. In this embodiment, the thickness of the encapsulant 140 ranges from about 1 micron to about 10 microns.
值得一提的是,在本實施例中,封膠體140的材料是有機化合物,例如是環氧樹脂。由於有機化合物的分子結構中具有許多的親水性基團,封膠體140僅能阻擋外在的污染及部分濕氣,但無法完全阻隔其中的親水性基團與濕氣作用。因此,在本實施例中,微機電系統封裝結構100藉由第一濕氣阻隔層150包覆於晶片110、封膠體140及蓋板130的周圍,以有效地阻隔封膠體140中的親水性基團與濕氣作用,提升了凹穴132的不可滲透性(impermeability)。如此一來,微機電元件120便能夠正常地運作。 It is worth mentioning that in the present embodiment, the material of the encapsulant 140 is an organic compound such as an epoxy resin. Since the molecular structure of the organic compound has many hydrophilic groups, the sealant 140 can only block external pollution and part of moisture, but cannot completely block the hydrophilic groups and moisture in it. Therefore, in the present embodiment, the MEMS package structure 100 is coated around the wafer 110, the encapsulant 140, and the cap plate 130 by the first moisture barrier layer 150 to effectively block the hydrophilicity in the encapsulant 140. The action of the group with moisture enhances the impermeability of the pocket 132. As a result, the microelectromechanical component 120 can operate normally.
在本實施例中,第一濕氣阻隔層150可藉由化學氣相沉積(chemical vapor deposition,CVD)或是物理氣相沉積(physical vapor deposition,PVD)的方式形成,但第一濕氣阻隔層150的形成方式並不限於此。此外,第一濕氣阻隔層150的材質為密緻性較高的無機絕緣材料,例如是氧化矽、氮化矽、氮氧化矽或其他不含親水性基團的氮化物、氧化物及氮氧化物,其抗濕氣能力大於封膠體140之抗濕氣能力。也就是說,由於無機絕緣材料不含親水性基團,因而不與濕氣作用,故能有效地阻絕濕氣。因此,第一濕氣阻隔層150可提供第二重的保護,以降低濕氣滲入的可能性。 In this embodiment, the first moisture barrier layer 150 can be formed by chemical vapor deposition (CVD) or physical vapor deposition (physical vapor deposition). The vapor deposition (PVD) is formed, but the formation of the first moisture barrier layer 150 is not limited thereto. In addition, the first moisture barrier layer 150 is made of a highly dense inorganic insulating material such as cerium oxide, cerium nitride, cerium oxynitride or other nitrides, oxides and nitrogens containing no hydrophilic groups. The oxide has a moisture resistance that is greater than the moisture resistance of the sealant 140. That is to say, since the inorganic insulating material does not contain a hydrophilic group and thus does not act on moisture, it can effectively block moisture. Therefore, the first moisture barrier layer 150 can provide a second weight protection to reduce the possibility of moisture infiltration.
相較於習知的微機電系統封裝結構10,本實施例之微機電系統封裝結構100在蓋板130周圍與晶片110之間具有較小的間隙,密封於蓋板130周圍與晶片110之間的封膠體140不需要太大的尺寸,較不易龜裂。並且,第一濕氣阻隔層150包覆晶片110、封膠體140及蓋板130的周圍,以提供微機電系統封裝結構100較佳的抗濕氣能力。 Compared with the conventional MEMS package structure 10, the MEMS package structure 100 of the present embodiment has a small gap between the cover plate 130 and the wafer 110, and is sealed between the cover plate 130 and the wafer 110. The sealant 140 does not need to be too large in size and is less prone to cracking. Moreover, the first moisture barrier layer 150 covers the periphery of the wafer 110, the encapsulant 140, and the cap plate 130 to provide better moisture resistance of the MEMS package structure 100.
圖3是依照本發明的另一實施例的一種微機電系統封裝結構的示意圖。請參閱圖3,本實施例之微機電系統封裝結構200與上一實施例之微機電系統封裝結構100的主要差異在於,在本實施例中,微機電系統封裝結構200更包括一第一基板260、一第二基板270以及一第二濕氣阻隔層280。第一基板260具有一孔洞262。一晶片210、一微機電元件220、一蓋板230、一封膠體240及一第一濕氣阻隔層250設置於孔洞262內。第二基板270設置於第一基板260上以覆蓋孔洞262。第二濕氣阻隔層280密封第一 基板260與第二基板270之間的一交界區。 3 is a schematic diagram of a microelectromechanical system package structure in accordance with another embodiment of the present invention. Referring to FIG. 3, the main difference between the MEMS package structure 200 of the present embodiment and the MEMS package structure 100 of the previous embodiment is that, in this embodiment, the MEMS package structure 200 further includes a first substrate. 260, a second substrate 270 and a second moisture barrier layer 280. The first substrate 260 has a hole 262. A wafer 210, a microelectromechanical component 220, a cover 230, a gel 240 and a first moisture barrier layer 250 are disposed in the holes 262. The second substrate 270 is disposed on the first substrate 260 to cover the hole 262. The second moisture barrier layer 280 is sealed first An interface between the substrate 260 and the second substrate 270.
因此,在微機電系統封裝結構200中,第一基板260、第二基板270及第二濕氣阻隔層280可提供一第三重的保護,以避免濕氣進入凹穴232而導致微機電元件220故障。 Therefore, in the MEMS package structure 200, the first substrate 260, the second substrate 270, and the second moisture barrier layer 280 can provide a third weight protection to prevent moisture from entering the recess 232 and causing the microelectromechanical component. 220 failure.
此外,在本實施例中,第二基板270的大部分的區域為透明,以使一外界光線(未繪示)可穿過第二基板270。第二基板270具有覆蓋封膠體240的一區域272,也就是說,區域272在晶片210上的投影區域覆蓋於封膠體240在晶片210上的投影區域。在本實施例中,區域272為一黑色區域。因此,區域272可阻擋外界光線照射至封膠體240,而降低封膠體240受光降解的機率。 In addition, in this embodiment, a majority of the area of the second substrate 270 is transparent so that an external light (not shown) can pass through the second substrate 270. The second substrate 270 has a region 272 overlying the encapsulant 240, that is, the projected region of the region 272 on the wafer 210 overlies the projected area of the encapsulant 240 on the wafer 210. In the present embodiment, the area 272 is a black area. Therefore, the region 272 can block external light from being irradiated to the encapsulant 240, and the chance of photodegradation of the encapsulant 240 is reduced.
圖4是依照本發明的再一實施例的一種微機電系統封裝結構的示意圖。請參閱圖4,本實施例之微機電系統封裝結構300與上一實施例之微機電系統封裝結構200的主要差異在於,在本實施例中,微機電系統封裝結構300更包括一模製化合物390及一濕氣吸收元件395。模製化合物390設置在孔洞362內且貼附於第一濕氣阻隔層350的周圍。如圖4所示,模製化合物390在第一濕氣阻隔層350上的一投影區域覆蓋封膠體340在第一濕氣阻隔層350上的一投影區域。也就是說,模製化合物390可以增進封膠體340與第一濕氣阻隔層350的物理結構,以降低封膠體340與第一濕氣阻隔層350破裂的可能性。本實施例之微機電系統封裝結構300透過模製化合物390提供了一第四重保護。 4 is a schematic diagram of a microelectromechanical system package structure in accordance with still another embodiment of the present invention. Referring to FIG. 4, the main difference between the MEMS package structure 300 of the present embodiment and the MEMS package structure 200 of the previous embodiment is that, in this embodiment, the MEMS package structure 300 further includes a molding compound. 390 and a moisture absorbing element 395. The molding compound 390 is disposed within the hole 362 and attached to the periphery of the first moisture barrier layer 350. As shown in FIG. 4, a projection area of the molding compound 390 on the first moisture barrier layer 350 covers a projection area of the encapsulant 340 on the first moisture barrier layer 350. That is, the molding compound 390 can improve the physical structure of the sealant 340 and the first moisture barrier layer 350 to reduce the possibility of the sealant 340 and the first moisture barrier layer 350 being broken. The MEMS package structure 300 of the present embodiment provides a fourth weight protection through the molding compound 390.
此外,濕氣吸收元件395設置於由第一基板360與第二 基板370所包圍的孔洞362內,如此一來,即便是濕氣滲入孔洞362內,也會被濕氣吸收元件395所吸收,而不會進入凹穴332中,以確保微機電元件320可正常地運作。換言之,本實施例之微機電系統封裝結構300透過濕氣吸收元件395提供了一第五重保障。 Further, the moisture absorbing member 395 is disposed on the first substrate 360 and the second In the hole 362 surrounded by the substrate 370, even if moisture penetrates into the hole 362, it is absorbed by the moisture absorbing member 395 without entering the recess 332 to ensure that the MEMS element 320 can be normally operated. Working. In other words, the MEMS package structure 300 of the present embodiment provides a fifth weight guarantee through the moisture absorbing element 395.
綜上所述,本發明之微機電系統封裝結構透過蓋板的中央部位具有凹穴,凹穴可供微機電元件容置的設計,降低蓋板周圍與晶片之間的間隙高度,且透過封膠體配置於蓋板周圍與晶片之間的間隙以密封凹穴。由於蓋板周圍與晶片之間的間隙較小,封膠體的尺寸不需太大,因此較不易龜裂,而使得本發明之微機電系統封裝結構具有較佳的抗濕氣能力。此外,本發明之微機電系統封裝結構透過第一濕氣阻隔層包覆於晶片、蓋板及封膠體的周圍,以避免濕氣進入凹穴,有效提供第二重保護。另外,本發明之微機電系統封裝結構更藉由將晶片、微機電元件、蓋板、封膠體與第一濕氣阻隔層配置於被第一基板與第二基板所包圍的孔洞內,並藉由第二濕氣阻隔層密封第一基板與第二基板的交界區,以提供阻隔濕氣的第三重保護。並且,本發明之微機電系統封裝結構透過將模製化合物設置於孔洞內並且黏附於第一濕氣阻隔層的四周,以提供阻隔濕氣的第四重保護。再者,本發明之微機電系統封裝結構藉由將濕氣吸收元件設置於孔洞內,以吸收孔洞內的濕氣,而提供第五重保護。 In summary, the MEMS packaging structure of the present invention has a recess through the central portion of the cover plate, and the recess can be used for accommodating the MEMS component, reducing the gap height between the cover and the wafer, and transparently sealing The colloid is disposed in a gap between the cover plate and the wafer to seal the recess. Since the gap between the periphery of the cover plate and the wafer is small, the size of the sealant does not need to be too large, so that it is less likely to be cracked, so that the MEMS package structure of the present invention has better moisture resistance. In addition, the MEMS package structure of the present invention is coated around the wafer, the cover plate and the encapsulant through the first moisture barrier layer to prevent moisture from entering the recess and effectively providing the second weight protection. In addition, the MEMS package structure of the present invention further comprises disposing a wafer, a MEMS element, a cover plate, a sealant and a first moisture barrier layer in a hole surrounded by the first substrate and the second substrate, and borrowing A boundary region between the first substrate and the second substrate is sealed by the second moisture barrier layer to provide a third weight protection against moisture. Moreover, the MEMS package structure of the present invention provides a fourth weight protection against moisture by placing a molding compound in the cavity and adhering to the periphery of the first moisture barrier layer. Furthermore, the MEMS package structure of the present invention provides a fifth weight protection by arranging moisture absorbing elements in the holes to absorb moisture in the holes.
雖然本發明已以實施例揭露如上,然其並非用以限定本 發明,任何所屬技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作些許之更動與潤飾,故本發明之保護範圍當視後附之申請專利範圍所界定者為準。 Although the present invention has been disclosed above by way of example, it is not intended to limit the present invention. The scope of the present invention is defined by the scope of the appended claims, which are defined by the scope of the appended claims. quasi.
D‧‧‧距離 D‧‧‧Distance
H‧‧‧高度 H‧‧‧ Height
100‧‧‧微機電系統封裝結構 100‧‧‧Microelectromechanical system package structure
110‧‧‧晶片 110‧‧‧ wafer
112‧‧‧主動表面 112‧‧‧Active surface
120‧‧‧微機電元件 120‧‧‧Microelectromechanical components
130‧‧‧蓋板 130‧‧‧ Cover
132‧‧‧凹穴 132‧‧‧ recesses
132a‧‧‧上表面 132a‧‧‧ upper surface
140‧‧‧封膠體 140‧‧‧ Sealant
150‧‧‧第一濕氣阻隔層 150‧‧‧First moisture barrier
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