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TWI544491B - Shift register circuit - Google Patents

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TWI544491B
TWI544491B TW103131206A TW103131206A TWI544491B TW I544491 B TWI544491 B TW I544491B TW 103131206 A TW103131206 A TW 103131206A TW 103131206 A TW103131206 A TW 103131206A TW I544491 B TWI544491 B TW I544491B
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transistor
control signal
control
pull
electrically coupled
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TW103131206A
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TW201611016A (en
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林雅婷
李國銘
林煒力
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友達光電股份有限公司
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Priority to TW103131206A priority Critical patent/TWI544491B/en
Priority to CN201410692719.6A priority patent/CN104485134B/en
Publication of TW201611016A publication Critical patent/TW201611016A/en
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Publication of TWI544491B publication Critical patent/TWI544491B/en

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Description

移位暫存器電路 Shift register circuit

本發明是有關於一種移位暫存器電路,尤其是有關於一種具有較佳充放電能力之移位暫存器。 The present invention relates to a shift register circuit, and more particularly to a shift register having a better charge and discharge capability.

習知的移位暫存器係依據其內部之一控制訊號來決定是否輸出一閘極驅動訊號,且在移位暫存器不需要輸出閘極驅動訊號的時段中,將輸出閘極驅動訊號以及控制訊號穩定在低電位,以避免移位暫存器在錯誤的時間輸出閘極驅動訊號而驅動錯誤的閘極線。因此,如何在移位暫存器不需要輸出閘極驅動訊號的時段中,正確且快速的將輸出閘極驅動訊號以及控制訊號穩定在低電位,並減少移位暫存器內部元件因製程偏移或壓力效應(Stress)等因素造成誤動作的情況發生,變成為重要的課題。 The conventional shift register determines whether to output a gate driving signal according to one of the internal control signals, and outputs the gate driving signal in a period in which the shift register does not need to output the gate driving signal. And the control signal is stabilized at a low potential to prevent the shift register from outputting the gate drive signal at the wrong time to drive the wrong gate line. Therefore, how to correctly and quickly stabilize the output gate driving signal and the control signal at a low potential during the period in which the shift register does not need to output the gate driving signal, and reduce the internal components of the shift register due to process offset It is an important issue to cause malfunctions due to factors such as shifting or stress effects (Stress).

為了在移位暫存器不需要輸出閘極驅動訊號的時段中,正確且快速的將輸出閘極驅動訊號以及控制訊號係穩定在低電位,並減少移位暫存器內部元件因製程偏移或壓力效應等因素造成誤動作的情況發生,本發明提出一種移位暫存器電路實施例。 In order to prevent the output gate drive signal and the control signal from being stable at a low potential during the period in which the shift register does not need to output the gate drive signal, and reduce the internal offset of the shift register due to the process offset Or a situation in which a malfunction or the like causes a malfunction, and the present invention proposes an embodiment of a shift register circuit.

本發明所提出的移位暫存器電路實施例包括一 上拉控制電路、一上拉電路、一下拉控制電路及一下拉電路,上拉控制電路係用以接收一高電壓準位,並依據第n-1級閘極控制訊號決定是否輸出第n級控制訊號;上拉電路與上拉控制電路電性耦接,係用以接收高頻時脈訊號,並依據第n級控制訊號決定是否輸出第n級閘極控制訊號;下拉控制電路與上拉控制電路及上拉電路電性耦接,係用以在非動作期間將第n級控制訊號及第n級閘極控制訊號穩定於一低電壓準位;下拉電路與上拉電路電性耦接,係用以接收第n級閘極控制訊號,並依據第n+1級閘極控制訊號決定是否與下拉控制電路電性耦接。 The shift register circuit embodiment proposed by the present invention includes a Pull-up control circuit, a pull-up circuit, a pull-down control circuit and a pull-down circuit, the pull-up control circuit is configured to receive a high voltage level, and determine whether to output the nth level according to the n-1th gate control signal Control signal; the pull-up circuit and the pull-up control circuit are electrically coupled to receive the high-frequency clock signal, and determine whether to output the n-th gate control signal according to the n-th control signal; the pull-down control circuit and the pull-up The control circuit and the pull-up circuit are electrically coupled to stabilize the nth control signal and the nth gate control signal at a low voltage level during the non-operation period; the pull-down circuit is electrically coupled to the pull-up circuit The system is configured to receive the nth gate control signal and determine whether to be electrically coupled to the pulldown control circuit according to the n+1th gate control signal.

其中,該下拉控制電路更包括:一第一電晶體,其具有第一端、第二端及控制端,第一電晶體之第一端及第一電晶體之控制端係用以接收高頻時脈訊號;一第二電晶體,其具有第一端、第二端及控制端,第二電晶體之第一端係用以接收高頻時脈訊號,第二電晶體之控制端與第一電晶體之第二端電性耦接,第二電晶體之第二端係用以輸出下拉控制訊號;一第三電晶體,其具有第一端、第二端及控制端,第三電晶體之第一端與第一電晶體之第二端電性耦接,第三電晶體之第二端與低電壓準位電性耦接;一第四電晶體,其具有第一端、第二端及控制端,第四電晶體之第一端與第二電晶體之第二端電性耦接,第四電晶體之第二端與低電壓準位電性耦接;一第五電晶體,其具有第一端、第二端及控制端,第五電晶體之第一端係用以接收第n級控制訊號,第五電晶體之控制端與第二電晶體之第二端電性耦接,係用以接收下拉控制訊號,第五電晶體之第二端與第三電晶體之控制端、第四電晶體之控制端以及下拉電路電性耦接;一第六電 晶體,其具有第一端、第二端及控制端,第六電晶體之第一端與第五電晶體之第二端電性耦接,第六電晶體之控制端與第二電晶體之第二端電性耦接,係用以接收下拉控制訊號,第六電晶體之第二端則與低電壓準位電性耦接;一第七電晶體,其具有第一端、第二端及控制端,第七電晶體之第一端係用以接收第n級閘極控制訊號,第七電晶體之控制端與第二電晶體之第二端電性耦接,係用以接收下拉控制訊號,第七電晶體之第二端與低電壓準位電性耦接;一第八電晶體,其具有第一端、第二端及控制端,第八電晶體之第一端係用以接收高頻時脈訊號,第八電晶體之控制端係用以接收第n級控制訊號,第八電晶體之第二端與第五電晶體之第二端電性耦接;以及一第九電晶體,其具有第一端、第二端及控制端,第九電晶體之第一端係用以接收第n級控制訊號,第九電晶體之控制端係用以接收第n+1級閘極控制訊號,第九電晶體之第二端與低電壓準位電性耦接。 The pull-down control circuit further includes: a first transistor having a first end, a second end, and a control end, wherein the first end of the first transistor and the control end of the first transistor are configured to receive the high frequency a second transistor having a first end, a second end, and a control end, wherein the first end of the second transistor is configured to receive a high frequency clock signal, and the control end of the second transistor The second end of the second transistor is electrically coupled to the second end of the second transistor for outputting the pull-down control signal; the third transistor has a first end, a second end, and a control end, and the third The first end of the crystal is electrically coupled to the second end of the first transistor, and the second end of the third transistor is electrically coupled to the low voltage level; a fourth transistor having a first end, a second end and a control end, the first end of the fourth transistor is electrically coupled to the second end of the second transistor, and the second end of the fourth transistor is electrically coupled to the low voltage level; a crystal having a first end, a second end, and a control end, wherein the first end of the fifth transistor is configured to receive the nth control signal, and the fifth The control end of the crystal is electrically coupled to the second end of the second transistor for receiving the pull-down control signal, the second end of the fifth transistor and the control end of the third transistor, and the control end of the fourth transistor And the pull-down circuit is electrically coupled; a sixth battery a crystal having a first end, a second end, and a control end, wherein the first end of the sixth transistor is electrically coupled to the second end of the fifth transistor, and the control end of the sixth transistor and the second transistor The second end is electrically coupled to receive the pull-down control signal, and the second end of the sixth transistor is electrically coupled to the low voltage level; a seventh transistor having a first end and a second end And a control terminal, the first end of the seventh transistor is configured to receive the nth gate control signal, and the control end of the seventh transistor is electrically coupled to the second end of the second transistor to receive the pulldown a control signal, the second end of the seventh transistor is electrically coupled to the low voltage level; an eighth transistor having a first end, a second end, and a control end, and the first end of the eighth transistor is used Receiving a high frequency clock signal, the control end of the eighth transistor is configured to receive the nth stage control signal, and the second end of the eighth transistor is electrically coupled to the second end of the fifth transistor; a nine-electrode having a first end, a second end, and a control end, wherein the first end of the ninth transistor is configured to receive the nth-level control signal A ninth electric control terminal for receiving the system crystal of the n + 1 stage gate control signal, a second terminal of the ninth transistor and the low voltage level is electrically coupled.

本發明在不需要輸出閘極控制訊號的時段中,利用兩次穩壓的穩壓方式將控制訊號係穩定在低電壓準位,此外,由於下拉控制電路係利用時脈訊號來決定是否將輸出閘極驅動訊號以及控制訊號係穩定在低電位,因此可有效降低因製程偏移導致誤動作發生,又下拉電路係依據閘極控制訊號決定是否將閘極驅動訊號穩定在低電壓準位,因此本發明之移位暫存器電路實施例不僅可快速且正確的將控制訊號穩定在低電壓準位,更大幅提升電路可靠度及容忍製程偏移誤差量,此外更可有效降低下拉電路的壓力效應,進而增進本發明移位暫存器實施例之使用效益。 In the period in which the gate control signal is not required to be output, the control signal system is stabilized at a low voltage level by using two voltage stabilization methods, and the pull-down control circuit uses the clock signal to determine whether the output will be output. The gate drive signal and the control signal are stable at a low potential, so that the malfunction can be effectively reduced due to the process offset, and the pull-down circuit determines whether the gate drive signal is stabilized at the low voltage level according to the gate control signal. The embodiment of the shift register circuit of the invention can not only quickly and correctly stabilize the control signal at a low voltage level, but also greatly improve the circuit reliability and tolerance of the process offset error, and further reduce the pressure effect of the pull-down circuit. , thereby improving the use efficiency of the embodiment of the shift register of the present invention.

CK、CK1、CK2‧‧‧高頻時脈訊號 CK, CK1, CK2‧‧‧ high frequency clock signal

G(n-1)‧‧‧第n-1級閘極控制訊號 G(n-1)‧‧‧n-1th gate control signal

G(n)‧‧‧第n級閘極控制訊號 G(n)‧‧‧n-th gate control signal

Q(n)‧‧‧第n級控制訊號 Q(n)‧‧‧n level control signal

G(n+1)‧‧‧第n+1級閘極控制訊號 G(n+1)‧‧‧n+1th gate control signal

VGH‧‧‧高電壓準位 VGH‧‧‧high voltage level

VGL1‧‧‧第一低電壓準位 VGL1‧‧‧ first low voltage level

VGL2‧‧‧第二低電壓準位 VGL2‧‧‧ second low voltage level

C‧‧‧電容 C‧‧‧ capacitor

A‧‧‧節點 A‧‧‧ node

T1、T2、T3、T4、T5、T6、T7、T8、T9、T10、T11、T12、T13‧‧‧電晶體 T1, T2, T3, T4, T5, T6, T7, T8, T9, T10, T11, T12, T13‧‧‧ transistors

10‧‧‧上拉控制電路 10‧‧‧ Pull-up control circuit

20‧‧‧上拉電路 20‧‧‧ Pull-up circuit

30‧‧‧下拉電路 30‧‧‧ Pulldown circuit

40‧‧‧下拉控制電路 40‧‧‧ Pull-down control circuit

圖1為本發明之時序圖實施例示意圖。 1 is a schematic diagram of an embodiment of a timing diagram of the present invention.

圖2為本發明之移位暫存器實施例示意圖。 2 is a schematic diagram of an embodiment of a shift register of the present invention.

圖3為本發明之移位暫存器另一實施例示意圖。 3 is a schematic diagram of another embodiment of a shift register of the present invention.

以下配合圖1及圖2來說明本發明之實施例,圖1為本發明實施例所使用之時序圖,其包括高頻時脈訊號CK、第n-1級閘極控制訊號G(n-1)、第n級閘極控制訊號G(n)、第n+1級閘極控制訊號G(n+1)以及第n級控制訊號Q(n)之時序圖。圖2則為本發明移位暫存器之實施例一,其包括一上拉控制電路10、一上拉電路20、一下拉電路30,以及一下拉控制電路40。上拉控制電路10係用以輸出第n級控制訊號Q(n),使上拉電路20可根據第n級控制訊號Q(n)輸出第n級閘極控制訊號G(n),而下拉電路30以及下拉控制電路40則是在不需要輸出閘極控制訊號的時段中,將第n級控制訊號Q(n)以及第n級閘極控制訊號G(n)穩定於低電壓準位,以避免在不需要輸出閘極控制訊號的時段中驅動錯誤的閘極線,導致誤動作的情況發生。 The embodiment of the present invention is described below with reference to FIG. 1 and FIG. 2. FIG. 1 is a timing diagram of an embodiment of the present invention, including a high frequency clock signal CK and an n-1th gate control signal G (n- 1), timing diagram of the nth gate control signal G(n), the n+1th gate control signal G(n+1), and the nth control signal Q(n). 2 is a first embodiment of the shift register of the present invention, which includes a pull-up control circuit 10, a pull-up circuit 20, a pull-down circuit 30, and a pull-down control circuit 40. The pull-up control circuit 10 is configured to output the n-th control signal Q(n), so that the pull-up circuit 20 can output the n-th gate control signal G(n) according to the n-th control signal Q(n), and pull down The circuit 30 and the pull-down control circuit 40 stabilize the n-th control signal Q(n) and the n-th gate control signal G(n) at a low voltage level during a period in which the gate control signal is not required to be output. To avoid driving the wrong gate line during the period when the gate control signal is not required, causing a malfunction.

前述之上拉控制電路10包括一電晶體T1,電晶體T1包括第一端、第二端及控制端,電晶體T1之第一端係用以接收一高電壓準位VGH,電晶體T1之控制端係用以接收第n-1級閘極控制訊號G(n-1),電晶體T1之第二端係用以輸出第n級控制訊號Q(n),也就是電晶體T1係用以根據第n-1級閘極控制訊號G(n-1)決定是否將所接收之高電壓準位 VGH輸出為第n級控制訊號Q(n)。 The pull-up control circuit 10 includes a transistor T1. The transistor T1 includes a first end, a second end, and a control end. The first end of the transistor T1 is configured to receive a high voltage level VGH, and the transistor T1 The control terminal is configured to receive the n-1th gate control signal G(n-1), and the second end of the transistor T1 is used to output the nth control signal Q(n), that is, the transistor T1 is used. Whether to determine the received high voltage level according to the n-1th gate control signal G(n-1) The VGH output is the nth stage control signal Q(n).

前述之上拉電路20包括一電晶體T2以及一電容C,電晶體T2包括第一端、第二端及控制端,電晶體T2之第一端係用以接收前述之高頻時脈訊號CK,電晶體T2之控制端係用以接收第n級控制訊號Q(n),電晶體T2之第二端係用以輸出第n級閘極控制訊號G(n),也就是電晶體T2係用以根據第n級控制訊號Q(n)決定是否將所接收之高頻時脈訊號CK輸出為第n級閘極控制訊號G(n)。此外,電容C具有第一端以及第二端,電容C之第一端與電晶體T2之第二端電性耦接,電容C之第二端與電晶體T2之控制端電性耦接,電容C係用以將第n級閘極控制訊號G(n)補償至第n級控制訊號Q(n)。 The pull-up circuit 20 includes a transistor T2 and a capacitor C. The transistor T2 includes a first end, a second end, and a control end. The first end of the transistor T2 is configured to receive the high frequency clock signal CK. The control terminal of the transistor T2 is configured to receive the nth stage control signal Q(n), and the second end of the transistor T2 is used to output the nth stage gate control signal G(n), that is, the transistor T2 system. It is used to determine whether to output the received high frequency clock signal CK as the nth gate control signal G(n) according to the nth stage control signal Q(n). In addition, the capacitor C has a first end and a second end. The first end of the capacitor C is electrically coupled to the second end of the transistor T2, and the second end of the capacitor C is electrically coupled to the control end of the transistor T2. Capacitor C is used to compensate the nth gate control signal G(n) to the nth stage control signal Q(n).

前述之下拉電路30包括一電晶體T3,電晶體T3包括第一端、第二端及控制端,電晶體T3之第一端與電晶體T2的第二端電性耦接,係用以接收前述之第n級閘極控制訊號G(n),電晶體T3之控制端係用以接收前述之第n+1級閘極控制訊號G(n+1),電晶體T3之第二端係用以與下拉控制電路40之節點A電性耦接,也就是電晶體T3係用以根據第n+1級閘極控制訊號G(n+1)來決定是否將電晶體T2的第二端與下拉控制電路40之節點A電性耦接。 The lower pull circuit 30 includes a transistor T3. The transistor T3 includes a first end, a second end, and a control end. The first end of the transistor T3 is electrically coupled to the second end of the transistor T2 for receiving. The nth gate control signal G(n), the control terminal of the transistor T3 is configured to receive the n+1th gate control signal G(n+1), and the second end of the transistor T3 For electrically connecting to the node A of the pull-down control circuit 40, that is, the transistor T3 is used to determine whether to connect the second end of the transistor T2 according to the n+1th gate control signal G(n+1). The node A of the pull-down control circuit 40 is electrically coupled.

下拉控制電路40包括一電晶體T4,電晶體T4包括第一端、第二端及控制端,電晶體T4之第一端與電晶體T1之第二端電性耦接,係用以接收第n級控制訊號Q(n),電晶體T4之控制端係用以接收第n+1級閘極控制訊號G(n+1),電晶體T4之第二端係用以與一第一低電壓準位VGL1電性耦接,也就是電晶體T4係用以根據第n+1級閘極 控制訊號G(n+1)來決定是否將第n級控制訊號Q(n)下拉至第一低電壓準位VGL1。 The pull-down control circuit 40 includes a transistor T4. The transistor T4 includes a first end, a second end, and a control end. The first end of the transistor T4 is electrically coupled to the second end of the transistor T1. The n-th control signal Q(n), the control terminal of the transistor T4 is configured to receive the n+1th gate control signal G(n+1), and the second end of the transistor T4 is used to be the first low The voltage level VGL1 is electrically coupled, that is, the transistor T4 is used to be based on the n+1th gate The control signal G(n+1) is used to determine whether to pull the nth control signal Q(n) to the first low voltage level VGL1.

下拉控制電路40更包括一電晶體T5,電晶體T5包括第一端、第二端及控制端,電晶體T5之第一端及控制端係用以接收前述之高頻時脈訊號CK,也就是電晶體T5係用以根據高頻時脈訊號CK來決定是否將所接收之高頻時脈訊號CK傳送至電晶體T5之第二端。 The pull-down control circuit 40 further includes a transistor T5. The transistor T5 includes a first end, a second end, and a control end. The first end and the control end of the transistor T5 are configured to receive the high frequency clock signal CK. That is, the transistor T5 is configured to determine whether to transmit the received high frequency clock signal CK to the second end of the transistor T5 according to the high frequency clock signal CK.

下拉控制電路40更包括一電晶體T6,電晶體T6包括第一端、第二端及控制端,電晶體T6之第一端係用以接收高頻時脈訊號CK,電晶體T6之控制端係用以與電晶體T5之第二端電性耦接,也就是電晶體T6係用以根據電晶體T5第二端的電壓準位來決定是否將所接收之高頻時脈訊號CK傳送至電晶體T6之第二端並輸出為下拉控制訊號。 The pull-down control circuit 40 further includes a transistor T6. The transistor T6 includes a first end, a second end, and a control end. The first end of the transistor T6 is configured to receive the high-frequency clock signal CK, and the control end of the transistor T6. The system is electrically coupled to the second end of the transistor T5, that is, the transistor T6 is configured to determine whether to transmit the received high frequency clock signal CK to the power according to the voltage level of the second end of the transistor T5. The second end of the crystal T6 is output as a pull-down control signal.

下拉控制電路40更包括一電晶體T7,電晶體T7包括第一端、第二端及控制端,電晶體T7之第一端係用以接收高頻時脈訊號CK,電晶體T7之控制端係用以接收第n級控制訊號Q(n),也就是電晶體T7係根據第n級控制訊號Q(n)來決定是否與下拉控制電路40之節點A電性耦接。 The pull-down control circuit 40 further includes a transistor T7. The transistor T7 includes a first end, a second end, and a control end. The first end of the transistor T7 is configured to receive the high-frequency clock signal CK, and the control end of the transistor T7. The system is configured to receive the nth stage control signal Q(n), that is, the transistor T7 determines whether to be electrically coupled to the node A of the pull-down control circuit 40 according to the nth stage control signal Q(n).

下拉控制電路40更包括一電晶體T8,電晶體T8包括第一端、第二端及控制端,電晶體T8之第一端係用以接收電晶體T5第二端之電壓準位,電晶體T8之控制端係用以接收電晶體T7第二端,也就是節點A之電壓準位,電晶體T8之第二端係用以與第一低電壓準位VGL1電性耦接,也就是電晶體T8係用以根據電晶體T7第二端之電壓準位來決定是否將電晶體T5第二端之電壓準位下拉至第一低電壓準位VGL1。 The pull-down control circuit 40 further includes a transistor T8. The transistor T8 includes a first end, a second end, and a control end. The first end of the transistor T8 is configured to receive the voltage level of the second end of the transistor T5. The control terminal of the T8 is configured to receive the second terminal of the transistor T7, that is, the voltage level of the node A. The second end of the transistor T8 is electrically coupled to the first low voltage level VGL1, that is, the electricity. The crystal T8 is used to determine whether to pull down the voltage level of the second end of the transistor T5 to the first low voltage level VGL1 according to the voltage level of the second end of the transistor T7.

下拉控制電路40更包括一電晶體T9,電晶體T9包括第一端、第二端及控制端,電晶體T9之第一端係用以接收電晶體T6第二端之電壓準位,電晶體T9之控制端係用以接收電晶體T7第二端之電壓準位,電晶體T9之第二端係用以與第一低電壓準位VGL1電性耦接,也就是電晶體T9係用以根據電晶體T7第二端之電壓準位來決定是否將電晶體T6第二端之電壓準位下拉至第一低電壓準位VGL1。 The pull-down control circuit 40 further includes a transistor T9. The transistor T9 includes a first end, a second end, and a control end. The first end of the transistor T9 is configured to receive the voltage level of the second end of the transistor T6. The control terminal of the T9 is configured to receive the voltage level of the second end of the transistor T7, and the second end of the transistor T9 is electrically coupled to the first low voltage level VGL1, that is, the transistor T9 is used. According to the voltage level of the second end of the transistor T7, it is determined whether the voltage level of the second end of the transistor T6 is pulled down to the first low voltage level VGL1.

下拉控制電路40更包括一電晶體T10,電晶體T10包括第一端、第二端及控制端,電晶體T10之第一端係用以接收第n級控制訊號Q(n),電晶體T10之控制端係用以接收電晶體T6第二端之電壓準位,即下拉控制訊號,電晶體T10之第二端係用以與電晶體T7之第二端節點A電性耦接,也就是電晶體T10係用以根據電晶體T6第二端之電壓準位來決定是否與電晶體T7之第二端節點A電性耦接。 The pull-down control circuit 40 further includes a transistor T10. The transistor T10 includes a first end, a second end, and a control end. The first end of the transistor T10 is configured to receive the n-th control signal Q(n), the transistor T10. The control terminal is configured to receive the voltage level of the second end of the transistor T6, that is, the pull-down control signal, and the second end of the transistor T10 is electrically coupled to the second end node A of the transistor T7, that is, The transistor T10 is configured to determine whether to be electrically coupled to the second end node A of the transistor T7 according to the voltage level of the second end of the transistor T6.

下拉控制電路40更包括一電晶體T11,電晶體T11包括第一端、第二端及控制端,電晶體T11之第一端係用以接收節點A之電壓準位,電晶體T11之控制端係用以接收電晶體T6第二端之電壓準位,電晶體T11之第二端係用以與第一低電壓準位VGL1電性耦接,也就是電晶體T11係用以根據電晶體T6第二端之電壓準位來決定是否將節點A之電壓準位下拉至第一低電壓準位VGL1。 The pull-down control circuit 40 further includes a transistor T11. The transistor T11 includes a first end, a second end, and a control end. The first end of the transistor T11 is configured to receive the voltage level of the node A, and the control end of the transistor T11. The second end of the transistor T11 is electrically coupled to the first low voltage level VGL1, that is, the transistor T11 is used according to the transistor T6. The voltage level of the second terminal determines whether the voltage level of the node A is pulled down to the first low voltage level VGL1.

下拉控制電路40更包括一電晶體T12,電晶體T12包括第一端、第二端及控制端,電晶體T12之第一端係用以接收第n級閘極控制訊號G(n),電晶體T12之控制端係用以接收電晶體T6第二端之電壓準位,電晶體T12之第二端係用以與第二低電壓準位VGL2電性耦接,也就是說電晶 體T12係用以根據電晶體T6第二端之電壓準位來決定是否將第n級閘極控制訊號G(n)下拉至第二低電壓準位VGL2,其中第一低電壓準位VG1之電壓準位低於第二低電壓準位VGL2。 The pull-down control circuit 40 further includes a transistor T12. The transistor T12 includes a first end, a second end, and a control end. The first end of the transistor T12 is configured to receive the n-th gate control signal G(n). The control terminal of the crystal T12 is configured to receive the voltage level of the second end of the transistor T6, and the second end of the transistor T12 is electrically coupled to the second low voltage level VGL2, that is, the electro-crystal The body T12 is configured to determine whether to pull the nth gate control signal G(n) to the second low voltage level VGL2 according to the voltage level of the second end of the transistor T6, wherein the first low voltage level VG1 The voltage level is lower than the second low voltage level VGL2.

以下將配合圖1及圖2來說明本發明實施例之運作方式。 The operation of the embodiment of the present invention will be described below with reference to FIGS. 1 and 2.

當高頻時脈訊號CK為高電壓電位時,如圖1所標示之CK1,此時由於只有高頻時脈訊號CK為高電壓電位,因此控制端接收高頻時脈訊號CK之電晶體T5被致動,高頻時脈訊號CK因而傳送至電晶體T5之第二端,因此控制端與電晶體T5之第二端電性耦接之電晶體T6也被致動,高頻時脈訊號CK因而傳送至電晶體T6之第二端並輸出為下拉控制訊號,控制端電性耦接電晶體T6之第二端的電晶體T10、電晶體T11以及電晶體T12即皆被下拉控制訊號致動。電晶體T10此時將第n級控制訊號Q(n)下拉至節點A之電壓準位,又由於電晶體T10之第二端與電晶體T11之第一端電性耦接,因此第n級控制訊號Q(n)此時藉由電晶體T11再次下拉至電晶體T11第二端所電性耦接之第一低電壓準位VG1,而電晶體T12此時則將第n級閘極控制訊號G(n)下拉至第二低電壓準位VGL2,因此此時移位暫存器實施例利用兩次穩壓的方式將第n級控制訊號Q(n)穩定於低電壓準位,第n級閘極控制訊號G(n)也藉由電晶體T12而維持在低電壓準位。 When the high-frequency clock signal CK is at a high voltage potential, as shown in FIG. 1 , CK1, at this time, since only the high-frequency clock signal CK is a high voltage potential, the control terminal receives the transistor T5 of the high-frequency clock signal CK. Actuated, the high frequency clock signal CK is thus transmitted to the second end of the transistor T5, so that the transistor T6 whose control terminal is electrically coupled to the second end of the transistor T5 is also actuated, and the high frequency clock signal is activated. The CK is thus transmitted to the second end of the transistor T6 and output as a pull-down control signal. The transistor T10, the transistor T11 and the transistor T12 of the second end of the control terminal electrically coupled to the transistor T6 are all actuated by the pull-down control signal. . The transistor T10 pulls down the nth control signal Q(n) to the voltage level of the node A, and the second end of the transistor T10 is electrically coupled to the first end of the transistor T11. The control signal Q(n) is again pulled down to the first low voltage level VG1 electrically coupled to the second end of the transistor T11 by the transistor T11, and the transistor T12 controls the nth gate at this time. The signal G(n) is pulled down to the second low voltage level VGL2, so the shift register embodiment stabilizes the nth stage control signal Q(n) at a low voltage level by means of two voltage stabilization methods. The n-level gate control signal G(n) is also maintained at a low voltage level by the transistor T12.

接著,當第n-1級閘極控制訊號G(n-1)為高電壓電位時,控制端接收第n-1級閘極控制訊號G(n-1)的電晶體T1被致動,因此電晶體T1第一端所接收之高電壓準位VGH會傳送至電晶體T1的第二端並輸出為第n級控制訊號 Q(n),控制端接收第n級控制訊號Q(n)的電晶體T7以及電晶體T2此時也皆被致動。 Then, when the n-1th gate control signal G(n-1) is at a high voltage potential, the transistor T1 that receives the n-1th gate control signal G(n-1) is actuated. Therefore, the high voltage level VGH received by the first end of the transistor T1 is transmitted to the second end of the transistor T1 and output as the nth level control signal. Q(n), the transistor T7 and the transistor T2 that the control terminal receives the nth stage control signal Q(n) are also activated at this time.

當高頻時脈訊號CK再度為高電壓電位時,如圖1所標示之CK2,由於電晶體T2與電晶體T7仍被第n級控制訊號Q(n)致動,電晶體T2將所接收之高頻時脈訊號CK傳送至電晶體T2的第二端並輸出為第n級閘極控制訊號G(n),且由於電容C電性耦接於電晶體T2的控制端及第二端之間,因此電容C會將第n級閘極控制訊號G(n)補償至第n級控制訊號Q(n),以增加第n級控制訊號Q(n)的驅動能力,此外,電晶體T7將所接收之高頻時脈訊號CK傳送至電晶體T7的第二端,即節點A,因此控制端接收電晶體T7第二端電壓準位之電晶體T8以及電晶體T9被致動,電晶體T8將電晶體T5之第二端下拉至電晶體T8第二端電性耦接之第一低電壓準位VG1,電晶體T9將電晶體T6之第二端下拉至電晶體T9第二端電性耦接之第一低電壓準位VG1,使控制端電性耦接電晶體T6第二端以接收下拉控制訊號之電晶體T10、電晶體T11以及電晶體T12保持關閉,以避免電晶體T10、電晶體T11以及電晶體T12在錯誤的時候被致動,導致在需輸出閘極控制訊號的時段將第n級控制訊號Q(n)以及第n級閘極控制訊號G(n)下拉至低電壓準位,發生誤動作的情況。 When the high frequency clock signal CK is again at a high voltage potential, as shown by the CK2 in FIG. 1, since the transistor T2 and the transistor T7 are still actuated by the nth stage control signal Q(n), the transistor T2 will receive The high frequency clock signal CK is transmitted to the second end of the transistor T2 and output as the nth gate control signal G(n), and the capacitor C is electrically coupled to the control terminal and the second end of the transistor T2. Therefore, the capacitor C compensates the nth gate control signal G(n) to the nth control signal Q(n) to increase the driving capability of the nth control signal Q(n), and further, the transistor The T7 transmits the received high frequency clock signal CK to the second end of the transistor T7, that is, the node A, so that the transistor T8 and the transistor T9 whose control terminal receives the voltage level of the second terminal of the transistor T7 are activated. The transistor T8 pulls the second end of the transistor T5 down to the first low voltage level VG1 electrically coupled to the second end of the transistor T8, and the transistor T9 pulls the second end of the transistor T6 down to the second stage of the transistor T9. The first low voltage level VG1 electrically coupled to the terminal is electrically coupled to the second end of the transistor T6 to receive the transistor T10 and the transistor T11 of the pull-down control signal. The crystal T12 remains off to prevent the transistor T10, the transistor T11, and the transistor T12 from being activated at the wrong time, resulting in the nth stage control signal Q(n) and the nth stage during the period in which the gate control signal is required to be output. The gate control signal G(n) is pulled down to the low voltage level, and a malfunction occurs.

接著當第n級控制訊號Q(n)回復為低電壓準位,也就是不需要輸出閘極驅動訊號的時段,且第n+1級閘極控制訊號G(n+1)為高電壓電位時,控制端接收第n+1級閘極控制訊號G(n+1)的電晶體T4以及電晶體T3被致動,因此電晶體T4會將第一端所接收之第n級控制訊號Q(n)下拉至 電晶體T4第二端所電性耦接之第一低電壓準位VG1,電晶體T3會將第一端所接收之第n級閘極控制訊號G(n)下拉至電晶體T3第二端所電性耦接之節點A之電壓準位,由於此時電晶體T7皆為關閉,因此節點A為低電壓電位,藉此將第n級閘極控制訊號G(n)維持於低電壓電位,使第n級控制訊號Q(n)以及第n級閘極控制訊號G(n)在不需要輸出閘極控制訊號的時段時有效穩定於低電壓準位,避免錯誤的閘極線被驅動,當下一個高頻時脈訊號CK,也就是圖1所示之CK1再度來臨時,即再次重複上述之運作方式以驅動正確之閘極線。 Then, when the nth stage control signal Q(n) returns to a low voltage level, that is, a period in which the gate driving signal is not required to be output, and the n+1th gate control signal G(n+1) is a high voltage potential. When the control terminal receives the transistor T4 of the n+1th gate control signal G(n+1) and the transistor T3 is activated, the transistor T4 will receive the nth control signal Q received by the first terminal. (n) pull down to The second low end of the transistor T4 is electrically coupled to the first low voltage level VG1, and the transistor T3 pulls down the nth gate control signal G(n) received by the first end to the second end of the transistor T3. The voltage level of the node A electrically coupled, since the transistor T7 is turned off at this time, the node A is at a low voltage potential, thereby maintaining the nth gate control signal G(n) at a low voltage potential. So that the nth control signal Q(n) and the nth gate control signal G(n) are effectively stabilized at a low voltage level when the gate control signal is not required to be output, so as to prevent the wrong gate line from being driven. When the next high frequency clock signal CK, that is, the CK1 shown in Fig. 1, comes again, the above operation mode is repeated again to drive the correct gate line.

圖3為本發明之另一移位暫存器實施例,圖3中與圖2中具有相同元件符號之元件具有一樣的動作原理,以下不再贅述。圖3與圖2之差異為圖3之移位暫存器實施例更包括了一電晶體T13,電晶體T13包括第一端、第二端及控制端,電晶體T13之第一端係用以接收電晶體T6第二端之電壓準位,也就是下拉控制訊號,電晶體T13之控制端係用以接收第n-1級閘極控制訊號G(n-1),電晶體T13之第二端係用以與第二低電壓準位VGL2電性耦接,也就是電晶體T13係根據第n-1級閘極控制訊號G(n-1)決定是否將電晶體T6第二端之電壓準位下拉至第二低電壓準位VGL2。因此當第n-1級閘極控制訊號G(n-1)為高電壓電位時,除了電晶體T1被致能以輸出第n級控制訊號Q(n)外,在本實施例中,電晶體T13亦會被第n-1級閘極控制訊號G(n-1)致能,以將電晶體T6第二端之電壓準位穩定於低電壓電位,即電晶體T13所電性耦接之第二低電壓準位VGL2,以在需要輸出閘極驅動訊號的時段時,將電晶體T10、電晶體T11以及電晶 體T12之控制端穩定於低電壓電位,以避免電晶體T10、電晶體T11以及電晶體T12在錯誤的時段被致動,導致在錯誤的時間將第n級控制訊號Q(n)以及第n級閘極控制訊號G(n)下拉至低電壓準位,發生誤動作的情況。 FIG. 3 is another embodiment of the shift register of the present invention, and FIG. 3 has the same operational principle as the components having the same component symbols in FIG. 2, and details are not described herein again. The difference between FIG. 3 and FIG. 2 is that the shift register embodiment of FIG. 3 further includes a transistor T13. The transistor T13 includes a first end, a second end, and a control end. The first end of the transistor T13 is used. The control terminal of the transistor T13 is configured to receive the n-1th gate control signal G(n-1), the transistor T13 The two ends are electrically coupled to the second low voltage level VGL2, that is, the transistor T13 determines whether to use the second end of the transistor T6 according to the n-1th gate control signal G(n-1). The voltage level is pulled down to the second low voltage level VGL2. Therefore, when the n-1th gate control signal G(n-1) is at a high voltage potential, in addition to the transistor T1 being enabled to output the nth control signal Q(n), in the present embodiment, The crystal T13 is also enabled by the n-1th gate control signal G(n-1) to stabilize the voltage level of the second terminal of the transistor T6 to a low voltage potential, that is, the transistor T13 is electrically coupled. The second low voltage level VGL2 is used to turn on the transistor T10, the transistor T11, and the transistor when a period of the gate driving signal is required to be output. The control terminal of the body T12 is stabilized at a low voltage potential to prevent the transistor T10, the transistor T11, and the transistor T12 from being activated during an erroneous period of time, resulting in the nth stage control signal Q(n) and the nth at the wrong time. The level gate control signal G(n) is pulled down to the low voltage level, and a malfunction occurs.

綜以上所述,由於本發明在不需要輸出閘極控制訊號的時段中,利用兩次穩壓的穩壓方式將控制訊號穩定在更低之低電壓準位,此外,下拉控制電路係利用時脈訊號來決定是否將輸出閘極驅動訊號以及控制訊號係穩定在低電位準位,又下拉電路係依據閘極控制訊號決定是否將閘極驅動訊號穩定在低電壓準位,因此本發明之移位暫存器電路實施例不僅可快速且正確的將控制訊號係穩定在低電壓準位,與直接電性耦接高頻時脈訊號或高電壓準位來進行下拉控制之其他移位暫存器相比,更大幅提升電路可靠度及容忍製程偏移誤差量,此外更可有效降低下拉電路的壓力效應,有效增進本發明移位暫存器實施例之使用效益。 In view of the above, since the present invention does not require the output of the gate control signal, the control signal is stabilized at a lower low voltage level by using two voltage stabilization methods, and the pull-down control circuit is utilized. The pulse signal determines whether the output gate driving signal and the control signal are stabilized at a low potential level, and the pull-down circuit determines whether to stabilize the gate driving signal at a low voltage level according to the gate control signal, so the shift of the present invention The bit register circuit embodiment not only can quickly and correctly stabilize the control signal system at a low voltage level, but also directly shifts the high frequency clock signal or high voltage level to perform other pull-down control of the pull-down control. Compared with the device, the circuit reliability is greatly improved and the process offset error amount is tolerated, and the pressure effect of the pull-down circuit is effectively reduced, thereby effectively improving the use efficiency of the shift register embodiment of the present invention.

惟以上所述,僅為本發明之較佳實施例而已,當不能以此限定本發明實施之範圍,凡依本發明申請專利範圍及說明書內容所做之等效變化或修飾,皆仍屬本發明專利涵蓋之範圍內。 However, the above description is only for the preferred embodiment of the present invention, and the equivalent changes or modifications made by the scope of the present invention and the contents of the specification are still in the present invention. Within the scope of the invention patent.

CK‧‧‧高頻時脈訊號 CK‧‧‧ high frequency clock signal

G(n-1)‧‧‧第n-1級閘極控制訊號 G(n-1)‧‧‧n-1th gate control signal

G(n)‧‧‧第n級閘極控制訊號 G(n)‧‧‧n-th gate control signal

Q(n)‧‧‧第n級控制訊號 Q(n)‧‧‧n level control signal

G(n+1)‧‧‧第n+1級閘極控制訊號 G(n+1)‧‧‧n+1th gate control signal

VGH‧‧‧高電壓準位 VGH‧‧‧high voltage level

VGL1‧‧‧第一低電壓準位 VGL1‧‧‧ first low voltage level

VGL2‧‧‧第二低電壓準位 VGL2‧‧‧ second low voltage level

C‧‧‧電容 C‧‧‧ capacitor

A‧‧‧節點 A‧‧‧ node

T1、T2、T3、T4、T5、T6、T7、T8、T9、T10、T11、T12‧‧‧電晶體 T1, T2, T3, T4, T5, T6, T7, T8, T9, T10, T11, T12‧‧‧ transistors

10‧‧‧上拉控制電路 10‧‧‧ Pull-up control circuit

20‧‧‧上拉電路 20‧‧‧ Pull-up circuit

30‧‧‧下拉電路 30‧‧‧ Pulldown circuit

40‧‧‧下拉控制電路 40‧‧‧ Pull-down control circuit

Claims (6)

一種移位暫存器電路,其包括:一上拉控制電路,係用以接收一高電壓準位,並依據一第n-1級閘極控制訊號決定是否輸出一第n級控制訊號;一上拉電路,與該上拉控制電路電性耦接,係用以接收一高頻時脈訊號,並依據該第n級控制訊號決定是否輸出一第n級閘極控制訊號;一下拉控制電路,與該上拉控制電路及該上拉電路電性耦接,係用以在非動作期間將該第n級控制訊號及該第n級閘極控制訊號穩定於一低電壓準位;以及一下拉電路,與該上拉電路電性耦接,係用以接收該第n級閘極控制訊號,並依據一第n+1級閘極控制訊號決定是否與該下拉控制電路電性耦接;其中,該下拉控制電路更包括:一第一電晶體,其具有第一端、第二端及控制端,該第一電晶體之第一端及該第一電晶體之控制端係用以接收該高頻時脈訊號;一第二電晶體,其具有第一端、第二端及控制端,該第二電晶體之第一端係用以接收該高頻時脈訊號,該第二電晶體之控制端與該第一電晶體之第二端電性耦接,該第二電晶體之第二端係用以輸出一下拉控制訊號;一第三電晶體,其具有第一端、第二端及控制端,該第三電晶體之第一端與該第一電晶體之第二端電性 耦接,該第三電晶體之第二端與該低電壓準位電性耦接;一第四電晶體,其具有第一端、第二端及控制端,該第四電晶體之第一端與該第二電晶體之第二端電性耦接,該第四電晶體之第二端與該低電壓準位電性耦接;一第五電晶體,其具有第一端、第二端及控制端,該第五電晶體之第一端係用以接收該第n級控制訊號,該第五電晶體之控制端與該第二電晶體之第二端電性耦接,係用以接收該下拉控制訊號,該第五電晶體之第二端與該第三電晶體之控制端、該第四電晶體之控制端以及該下拉電路電性耦接;一第六電晶體,其具有第一端、第二端及控制端,該第六電晶體之第一端與該第五電晶體之第二端電性耦接,該第六電晶體之控制端與該第二電晶體之第二端電性耦接,係用以接收該下拉控制訊號,該第六電晶體之第二端則與該低電壓準位電性耦接;一第七電晶體,其具有第一端、第二端及控制端,該第七電晶體之第一端係用以接收該第n級閘極控制訊號,該第七電晶體之控制端與該第二電晶體之第二端電性耦接,係用以接收該下拉控制訊號,該第七電晶體之第二端與該低電壓準位電性耦接;一第八電晶體,其具有第一端、第二端及控制端,該第八電晶體之第一端係用以接收該高頻時脈訊號,該第八電晶體之控制端係用以接收該第n級控制訊號,該第八電晶體之第二端與該第五電晶體之第二端電 性耦接;以及一第九電晶體,其具有第一端、第二端及控制端,該第九電晶體之第一端係用以接收第n級控制訊號,該第九電晶體之控制端係用以接收該第n+1級閘極控制訊號,該第九電晶體之第二端與該低電壓準位電性耦接。 A shift register circuit includes: a pull-up control circuit for receiving a high voltage level, and determining whether to output an nth level control signal according to an n-1th gate control signal; The pull-up circuit is electrically coupled to the pull-up control circuit for receiving a high-frequency clock signal, and determining whether to output an n-th gate control signal according to the n-th control signal; and pulling the control circuit And electrically coupled to the pull-up control circuit and the pull-up circuit for stabilizing the n-th control signal and the nth-level gate control signal to a low voltage level during non-operation; The pull-up circuit is electrically coupled to the pull-up circuit for receiving the n-th gate control signal, and determining whether to be electrically coupled to the pull-down control circuit according to an n+1-th gate control signal; The pull-down control circuit further includes: a first transistor having a first end, a second end, and a control end, wherein the first end of the first transistor and the control end of the first transistor are configured to receive The high frequency clock signal; a second transistor having a first end, The second end of the second transistor is configured to receive the high frequency clock signal, and the control end of the second transistor is electrically coupled to the second end of the first transistor. The second end of the second transistor is configured to output a pull control signal; a third transistor has a first end, a second end, and a control end, the first end of the third transistor and the first end Second end of the crystal Coupling, the second end of the third transistor is electrically coupled to the low voltage level; a fourth transistor having a first end, a second end, and a control end, the first of the fourth transistors The second end is electrically coupled to the second end of the second transistor, and the second end of the fourth transistor is electrically coupled to the low voltage level; a fifth transistor having a first end and a second end The first end of the fifth transistor is configured to receive the nth stage control signal, and the control end of the fifth transistor is electrically coupled to the second end of the second transistor, Receiving the pull-down control signal, the second end of the fifth transistor is electrically coupled to the control end of the third transistor, the control end of the fourth transistor, and the pull-down circuit; a sixth transistor, The first end, the second end, and the control end, the first end of the sixth transistor is electrically coupled to the second end of the fifth transistor, and the control end of the sixth transistor and the second transistor The second end is electrically coupled to receive the pull-down control signal, and the second end of the sixth transistor is electrically coupled to the low voltage level; a seventh transistor having a first end, a second end, and a control end, wherein the first end of the seventh transistor is configured to receive the nth gate control signal, and the control end of the seventh transistor The second end of the second transistor is electrically coupled to receive the pull-down control signal, and the second end of the seventh transistor is electrically coupled to the low voltage level; an eighth transistor, The first end, the second end, and the control end, the first end of the eighth transistor is configured to receive the high frequency clock signal, and the control end of the eighth transistor is configured to receive the nth level control signal a second end of the eighth transistor and a second end of the fifth transistor And a ninth transistor having a first end, a second end, and a control end, wherein the first end of the ninth transistor is configured to receive the nth level control signal, and the ninth transistor is controlled The end is configured to receive the n+1th gate control signal, and the second end of the ninth transistor is electrically coupled to the low voltage level. 如請求項1所述之移位暫存器電路,其中,該下拉控制電路更包括:一第十電晶體,其具有第一端、第二端及控制端,該第十電晶體之第一端與該第二電晶體之第二端電性耦接,該第十電晶體之控制端係用以接收該第n-1級閘極控制訊號,該第十電晶體之第二端與該低電壓準位電性耦接。 The shift register circuit of claim 1, wherein the pull-down control circuit further comprises: a tenth transistor having a first end, a second end, and a control end, the first of the tenth transistor The terminal is electrically coupled to the second end of the second transistor, and the control end of the tenth transistor is configured to receive the n-1th gate control signal, and the second end of the tenth transistor The low voltage level is electrically coupled. 如請求項1所述之移位暫存器電路,其中,該上拉控制電路更包括:一第十一電晶體,其具有第一端、第二端及控制端,該第十一電晶體之第一端用以接收該高電壓準位,該第十一電晶體之控制端係用以接收第n-1級閘極控制訊號,該第十一電晶體之第二端係用以輸出該第n級控制訊號。 The shift register circuit of claim 1, wherein the pull-up control circuit further comprises: an eleventh transistor having a first end, a second end, and a control end, the eleventh transistor The first end is configured to receive the high voltage level, and the control end of the eleventh transistor is configured to receive the n-1th gate control signal, and the second end of the eleventh transistor is used for outputting The nth level control signal. 如請求項1所述之移位暫存器電路,其中,該上拉電路更包括:一第十二電晶體,其具有第一端、第二端及控制端, 該第十二電晶體之第一端係用以接收該高頻時脈訊號,該第十二電晶體之控制端係用以接收該第n級控制訊號,該第十二電晶體之第二端係用以輸出該第n級閘極控制訊號;以及一電容,其第一端與該第十二電晶體之第二端電性耦接,其第二端與該第十二電晶體之控制端電性耦接。 The shift register circuit of claim 1, wherein the pull-up circuit further comprises: a twelfth transistor having a first end, a second end, and a control end, The first end of the twelfth transistor is configured to receive the high frequency clock signal, and the control end of the twelfth transistor is configured to receive the nth level control signal, the second of the twelfth transistor The end is configured to output the nth gate control signal; and a capacitor, the first end of which is electrically coupled to the second end of the twelfth transistor, and the second end and the twelfth transistor The control terminal is electrically coupled. 如請求項1所述之移位暫存器電路,其中,該下拉電路更包括:一第十三電晶體,其具有第一端、第二端及控制端,該第十三電晶體之第一端係用以接收該第n級閘極控制訊號,該第十三電晶體之控制端係用以接收該第n+1級閘極控制訊號,該第十三電晶體之第二端係用以與該該第五電晶體之第二端電性耦接。 The shift register circuit of claim 1, wherein the pull-down circuit further comprises: a thirteenth transistor having a first end, a second end, and a control end, the thirteenth transistor One end is configured to receive the nth gate control signal, and the control end of the thirteenth transistor is configured to receive the n+1th gate control signal, and the second end of the thirteenth transistor And electrically coupled to the second end of the fifth transistor. 如請求項1所述之移位暫存器電路,其中,該低電壓準位更包括一第一低電壓準位以及一第二低電壓準位。 The shift register circuit of claim 1, wherein the low voltage level further comprises a first low voltage level and a second low voltage level.
TW103131206A 2014-09-10 2014-09-10 Shift register circuit TWI544491B (en)

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