TWI542061B - Electrical device - Google Patents
Electrical device Download PDFInfo
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- TWI542061B TWI542061B TW100144132A TW100144132A TWI542061B TW I542061 B TWI542061 B TW I542061B TW 100144132 A TW100144132 A TW 100144132A TW 100144132 A TW100144132 A TW 100144132A TW I542061 B TWI542061 B TW I542061B
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/02—Details
- H05B33/04—Sealing arrangements, e.g. against humidity
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/871—Self-supporting sealing arrangements
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/351—Thickness
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Photovoltaic Devices (AREA)
Description
本發明係關於一種電性裝置及其製造方法。The present invention relates to an electrical device and a method of manufacturing the same.
具備有機層作為構成要素的電子元件,例如有機電場發光元件(electroluminescent element)、有機光電轉換元件、有機電晶體等的電子元件,一般而言會有因曝露於大氣中,而使發光特性等比較容易劣化。為了抑制該種電子元件之特性的劣化,一般而言係對具備有機層的電子元件施行密封步驟。An electronic component having an organic layer as a constituent element, for example, an electronic component such as an organic electroluminescent element, an organic photoelectric conversion element, or an organic transistor, is generally exposed to the atmosphere to compare luminescence characteristics. It is easy to deteriorate. In order to suppress deterioration of characteristics of such an electronic component, a sealing step is generally performed on an electronic component having an organic layer.
參照第5圖針對密封進行說明。第5圖,係說明密封步驟的示意圖。The sealing will be described with reference to Fig. 5. Figure 5 is a schematic view showing the sealing step.
密封步驟,係例如,藉由首先以包圍搭載於支撐基板51上之電子元件54之方式配置密封構件52,接著透過該密封構件52將密封基板53貼合於支撐基板51而進行。藉此,電子元件54,則被支撐基板51、密封基板53及密封構件52所包圍,而與外界隔絕。In the sealing step, for example, the sealing member 52 is placed so as to surround the electronic component 54 mounted on the support substrate 51, and then the sealing substrate 53 is bonded to the support substrate 51 through the sealing member 52. Thereby, the electronic component 54 is surrounded by the support substrate 51, the sealing substrate 53, and the sealing member 52, and is isolated from the outside.
於前述密封構件52係採用高氣體阻隔性(gas barrier)材料。例如就此種密封構件52而言,已檢討使用含有玻璃(玻璃料,frit)之玻璃料劑的玻璃料密封步驟。The sealing member 52 is made of a high gas barrier material. For example, in the case of such a sealing member 52, a frit sealing step using a glass frit containing glass (frit) has been reviewed.
玻璃料係由以比較低溫進行溶融之薄片狀或者粉末狀的玻璃(以下,會有簡稱為「玻璃料玻璃粉末」之情形)所構成。在玻璃料密封步驟,係採用將該玻璃料玻璃粉末分散於溶劑而成之膏狀的玻璃料劑。The glass frit is composed of flaky or powdery glass which is melted at a relatively low temperature (hereinafter, abbreviated as "glass frit glass powder"). In the frit sealing step, a glass frit obtained by dispersing the frit glass powder in a solvent is used.
在玻璃料密封步驟中,首先對搭載有電子元件54之支撐機板51,以連續性包圍該電子元件54之方式線狀地進行供給玻璃料劑,接著進行初步煅燒,俾以預先去除玻璃料劑的溶劑成份,之後貼合挾著玻璃料劑之支撐基板51與密封基板53。接著藉由將雷射光對玻璃料劑進行照射使玻璃料玻璃粉末加熱而暫時溶融。當停止雷射光之照射時,玻璃料劑的溫度下降,玻璃料劑則再次硬化。如此,形成由硬化了玻璃料劑之玻璃所構成的密封構件52,再藉由支撐基板51、密封基板53、密封構件52將包圍之區域予以氣密地密封(例如參照專利文獻1)。In the frit sealing step, first, the support material sheet 51 on which the electronic component 54 is mounted is linearly supplied with the glass frit so as to continuously surround the electronic component 54, and then preliminary calcination is performed to remove the glass frit in advance. The solvent component of the agent is then bonded to the support substrate 51 and the sealing substrate 53 which are next to the glass frit. The frit glass powder is then temporarily melted by irradiating the frit with laser light. When the irradiation of the laser light is stopped, the temperature of the frit is lowered and the frit is hardened again. In this manner, the sealing member 52 made of the glass in which the glass frit is cured is formed, and the surrounding region is hermetically sealed by the supporting substrate 51, the sealing substrate 53, and the sealing member 52 (see, for example, Patent Document 1).
專利文獻1:日本特開2003-123966號公報。Patent Document 1: Japanese Laid-Open Patent Publication No. 2003-123966.
前述玻璃料劑的加熱,係藉由將向玻璃料劑之雷射光的照射,沿著所供給之玻璃料劑而遍及全周地進行掃瞄而進行。進行該加熱時,當因位置而使玻璃料劑的加熱溫度產生不均勻時,會使玻璃料劑的溶融狀態產生不均勻。結果,會於密封構件自身的性質形狀、密封基板或者支撐基板,與密封構件的密著性等產生不均勻,甚至使密封的可靠性降低。因此,在玻璃料密封步驟必須將所供給之玻璃料劑遍及全周地均勻地進行加熱而使溶融。The heating of the glass frit is performed by irradiating the laser light to the glass frit and scanning the entire glass frit along the entire circumference. When this heating is performed, when the heating temperature of the glass frit is uneven due to the position, the molten state of the frit is uneven. As a result, unevenness occurs in the property of the sealing member itself, the sealing substrate or the supporting substrate, the adhesion to the sealing member, and the like, and the reliability of the sealing is lowered. Therefore, in the frit sealing step, it is necessary to uniformly heat the supplied glass frit throughout the entire circumference to be melted.
然而,僅將雷射光遍及玻璃料劑之全周均勻地進行照射,會於玻璃料劑產生加熱不均勻。玻璃料劑係並非供給(塗佈)於由均勻的材質所構成之基底層之上,通常係塗佈於因位置而材質相異之基底層之上。However, only the laser light is uniformly irradiated throughout the entire circumference of the frit, which causes uneven heating in the frit. The glass frit is not applied (coated) on a base layer composed of a uniform material, and is usually applied to a base layer having a different material depending on the position.
例如,在電性裝置中,供以從外部對電子元件輸入電性信號的多數個電性配線55係以與玻璃料劑交叉之方式配置。因而,就塗佈有玻璃料劑之基底層而言,設置有電性配線55之部位、與未設置有電性配線55之部位則交互地存在。照射雷射光時之玻璃料劑的溫度上昇特性,係因塗佈有玻璃料劑之基底層的材質等而異。因此,在前述的電性裝置中,會有在塗佈於電性配線55上之玻璃料劑、與塗佈於未設置有電性配線55之部位上的玻璃料劑,於照射雷射光時之使玻璃料劑的加熱溫度形成相異,而於玻璃料劑的溶融狀態產生不均勻的問題。For example, in an electrical device, a plurality of electrical wirings 55 for inputting an electrical signal to an electronic component from the outside are disposed so as to intersect the glass frit. Therefore, in the base layer to which the glass frit is applied, the portion where the electric wiring 55 is provided and the portion where the electric wiring 55 is not provided exist alternately. The temperature rise characteristic of the glass frit when irradiating the laser light varies depending on the material of the undercoat layer on which the glass frit is applied. Therefore, in the above-described electric device, there is a glass frit applied to the electric wiring 55 and a glass frit applied to a portion where the electric wiring 55 is not provided, when the laser beam is irradiated. This causes the heating temperature of the frit to form different, and the problem of unevenness occurs in the molten state of the frit.
因此,本發明之目的,係提供一種能夠構成使密封材料(玻璃料劑)均勻地進行加熱而溶融的電性裝置。Accordingly, an object of the present invention is to provide an electrical device capable of constituting a sealing material (glass frit) to be uniformly heated and melted.
本發明,係提供下述[1]至[6]。The present invention provides the following [1] to [6].
[1]一種電性裝置,係具有:支撐基板,係設定有密封區域;電性電路,係設置於前述密封區域內;電性配線,係在前述支撐基板上,從前述密封區域內向密封區域外延伸而設置,且電性連接電性信號輸入輸出源與前述電性電路;密封構件,係包圍前述密封區域而設置於前述支撐基板上;以及密封基板,係透過前述密封構件,貼合於前述支撐基板;而前述電性電路係具備具有有機層的電子元件,並且在前述電性配線與前述密封構件交叉的交叉區域中,前述電性配線係由透光性之電性配線所構成。[1] An electrical device comprising: a support substrate provided with a sealing region; an electrical circuit disposed in the sealing region; and an electrical wiring on the support substrate from the sealing region to the sealing region An external extension is provided, and an electrical signal input/output source and an electrical circuit are electrically connected; a sealing member is disposed on the support substrate surrounding the sealing region; and the sealing substrate is adhered to the sealing member through the sealing member The electric circuit includes an electronic component having an organic layer, and the electrical wiring is formed of a translucent electrical wiring in an intersection region where the electrical wiring intersects the sealing member.
[2]如[1]所述之電性裝置,其中,前述透光性之電性配線的厚度,係為50nm以上未達300nm。[2] The electrical device according to [1], wherein the thickness of the light-transmitting electrical wiring is 50 nm or more and less than 300 nm.
[3]如[2]所述之電性裝置,其中,前述透光性之電性配線的電阻係數係為未達300μΩcm。[3] The electrical device according to [2], wherein the light-transmitting electrical wiring has a resistivity of less than 300 μΩcm.
[4]如[1]或者[2]所述之電性裝置,其中,電子元件係為有機電場發光元件、有機光電轉換元件或者有機電晶體。[4] The electrical device according to [1] or [2] wherein the electronic component is an organic electroluminescent device, an organic photoelectric conversion device, or an organic transistor.
[5]一種電性裝置的製造方法,係為[1]至[4]中任一項所述之電性裝置的製造方法,係包含:準備支撐基板之步驟,該支撐基板係設定有密封區域,並且設置有設置於該密封區域內的電性電路以及將前述電性信號輸入輸出源與前述電性電路予以電性連接的電性配線;沿著前述密封區域的外緣,供給密封材料之步驟;透過密封材料將前述密封基板與前述支撐基板貼合之步驟;對前述密封材料照射電磁射束,使前述密封材料加熱溶融之步驟;以及冷卻前述密封材料,使之硬化而構成密封構件之步驟。[5] A method of manufacturing an electrical device according to any one of [1] to [4], comprising: a step of preparing a support substrate, the support substrate being set to have a seal a region, and an electrical circuit disposed in the sealing region and an electrical wiring electrically connecting the electrical signal input/output source and the electrical circuit; and supplying a sealing material along an outer edge of the sealing region a step of bonding the sealing substrate to the support substrate through a sealing material; irradiating the sealing material with an electromagnetic beam to heat and melt the sealing material; and cooling the sealing material to harden it to form a sealing member The steps.
[6]如[5]所述之電性裝置的製造方法,其中,在使前述密封材料加熱溶融之步驟中,遍及配置有前述密封材料之全區域,以相同強度照射前述電磁射束。[6] The method for producing an electrical device according to [5], wherein, in the step of heating and melting the sealing material, the electromagnetic beam is irradiated with the same intensity over the entire region in which the sealing material is disposed.
根據本發明,可提供不降低設計的自由度,且能夠使密封材料均勻地加熱溶融之構成的電性裝置。According to the present invention, it is possible to provide an electric device which does not reduce the degree of freedom of design and which can uniformly heat and melt the sealing material.
以下參照圖式說明本發明之實施形態。另外,各圖式係只不過是以能夠理解發明之程度,示意性顯示構成要素的形狀、大小及配置。本發明並不限定為以下所述者,各構成要素在不脫離本發明之要旨的範圍中能夠適當變更。在以下之說明所採用之圖式中,會有針對同樣的構成要素標示同樣的符號,而省略重複說明的情形。此外,本發明之實施形態的構成,並不一定以圖示例之配置,來進行製造、或使用。Embodiments of the present invention will be described below with reference to the drawings. In addition, each drawing is a schematic display of the shape, size, and arrangement of the constituent elements to the extent that the invention can be understood. The present invention is not limited to the following description, and various constituent elements can be appropriately changed without departing from the scope of the invention. In the drawings, the same components are denoted by the same reference numerals, and the description thereof will not be repeated. Further, the configuration of the embodiment of the present invention is not necessarily manufactured or used in the arrangement of the drawings.
本發明之電性裝置,係為具有支撐基板、電性電路、電性配線、密封構件、以及密封基板的電性裝置,其中前述電性電路,係具備具有有機層的電子元件,並且在前述電性配線與前述密封構件進行交叉的交叉區域中,前述電性配線係藉由透光性的電性配線所構成;該支撐基板係設定有密封區域;該電性電路係設置於前述密封區域內;該電性配線,係在前述支撐基板上,從前述密封區域內向密封區域外延伸而設置,且電性連接電性信號輸入輸出源與前述電性電路;該密封構件係以包圍前述密封區域而設置於前述支撐基板上;而該密封基板係透過前述密封構件,貼合於前述支撐基板。The electrical device of the present invention is an electrical device having a supporting substrate, an electrical circuit, an electrical wiring, a sealing member, and a sealing substrate, wherein the electrical circuit is provided with an electronic component having an organic layer, and In the intersection region where the electrical wiring intersects with the sealing member, the electrical wiring is formed of a translucent electrical wiring; the supporting substrate is provided with a sealing region; and the electrical circuit is disposed in the sealing region The electrical wiring is disposed on the support substrate and extends from the inside of the sealing region to the outside of the sealing region, and is electrically connected to the electrical signal input/output source and the electrical circuit; the sealing member surrounds the sealing The region is provided on the support substrate; and the sealing substrate is bonded to the support substrate through the sealing member.
本發明,係只要具備具有有機層的電子元件,且建入有供以使電子元件進行動作的電性電路的電性裝置,則即使是任何種裝置均能夠適用。就具有有機層的電子元件之例而言,可列舉有有機電場發光元件、有機光電轉換元件以及有機電晶體等。例如本發明的電性裝置,係能夠適用於採用有機電場發光元件作為像素的光源或者背光源(back light);以及採用有機光電轉換元件作為建入電性電路之顯示裝置、太陽電池、光感測器;以及建入電性電路之光電轉換裝置;並且採用有機電晶體供以驅動或者控制前述有機電場發光元件、有機光電轉換元件、及其他電子元件而建入於電性電路的電性裝置。另外在以下中,茲以採用有機電場發光元件作為像素光源以及建入電性電路之顯示裝置為例,而針對本發明之電性裝置進行說明。The present invention can be applied to any type of device as long as it includes an electronic component having an organic layer and an electrical device in which an electrical circuit for operating the electronic component is built. Examples of the electronic component having an organic layer include an organic electroluminescence device, an organic photoelectric conversion device, an organic transistor, and the like. For example, the electrical device of the present invention can be applied to a light source or a backlight using an organic electroluminescent element as a pixel; and an organic photoelectric conversion element as a display device for building an electrical circuit, a solar cell, and a light sensing And a photoelectric conversion device built into the electrical circuit; and an organic device for driving or controlling the organic electric field light-emitting element, the organic photoelectric conversion element, and other electronic components to be built into the electrical circuit of the electrical circuit. In the following, an electric device according to the present invention will be described by taking an organic electroluminescence device as a pixel light source and a display device in which an electric circuit is built.
顯示裝置,係大致可分為主動矩陣(active matrix)驅動型之裝置、與被動矩陣(passive matrix)驅動型之裝置。本發明雖能夠適用於兩者之型的顯示裝置,惟在本實施形態中係以主動矩陣驅動型的顯示裝置作為一例進行說明。The display device can be roughly classified into an active matrix drive type device and a passive matrix drive type device. The present invention can be applied to both types of display devices. However, in the present embodiment, an active matrix drive type display device will be described as an example.
參照第1圖及第2圖,首先針對顯示裝置11之構成進行說明。第1圖係示意性地顯示顯示裝置之平面圖。第2圖係為在第1圖之剖面線II-II之位置所剖面之顯示裝置的示意性剖面圖。First, the configuration of the display device 11 will be described with reference to FIGS. 1 and 2 . Fig. 1 is a plan view schematically showing a display device. Fig. 2 is a schematic cross-sectional view showing a display device having a cross section taken along the line II-II of Fig. 1.
屬於一種電性裝置的顯示裝置11,係具備支撐基板12、電性電路14、電性配線15、密封構件16、以及密封基板17;該支撐基板12係設定有密封區域;該電性電路14係設置於前述密封區域13內;該電性配線15,係在前述支撐基板12上,從前述密封區域13內向密封區域13外延伸而設置,將電性信號輸入輸出源19與前述電性電路14電性連接;該密封構件16係以包圍前述密封區域13而設置於前述支撐基板12上;而該密封基板17係透過前述密封構件16,貼合於前述支撐基板12。A display device 11 belonging to an electrical device includes a support substrate 12, an electrical circuit 14, an electrical wiring 15, a sealing member 16, and a sealing substrate 17; the support substrate 12 is provided with a sealing region; the electrical circuit 14 The electrical wiring 15 is disposed on the support substrate 12 and extends from the inside of the sealing region 13 to the outside of the sealing region 13 to input an electrical signal to the output source 19 and the electrical circuit. The sealing member 16 is provided on the support substrate 12 so as to surround the sealing region 13 , and the sealing substrate 17 is passed through the sealing member 16 and bonded to the support substrate 12 .
在第1圖中,包圍電性電路14之以虛線所示之區域係相當於密封構件16,被該密封構件16所包圍之部分係相當於密封區域13。In the first diagram, a region indicated by a broken line surrounding the electric circuit 14 corresponds to the sealing member 16, and a portion surrounded by the sealing member 16 corresponds to the sealing region 13.
在本實施形態中的電性電路14,係含有採用複數個有機電場發光元件作為像素之光源、以及個別地驅動有機電場發光元件的像素電路而構成。像素電路,從支撐基板12之厚度方向的一邊觀看(以下,有稱之為「於平面觀看」之情形),係形成於顯示圖像資訊之區域(以下,有稱之為圖像顯示區域18之情形)。像素電路,係由有機電晶體、無機電晶體、以及電容器等所構成。於支撐基板12上所形成的像素電路上,形成覆蓋該像素電路的平坦化膜。平坦化膜,係例如由有機之絕緣膜、無機之絕緣膜所構成。另外,由於絕緣膜的一部分,係在加熱玻璃料劑使之溶融時被加熱,故對於絕緣膜係採用具有耐熱性之膜者為佳。因此,在絕緣膜中,設置在加熱玻璃料劑使之溶融時被加熱之部位的絕緣膜,從耐熱性觀點係以藉由無機絕緣膜所構成者為佳。就該種無機絕緣膜而言,例如能夠採用矽氧化膜、氮化矽膜、以及氮氧化矽膜等之金屬氧化膜。無機絕緣膜的厚度通常係為50奈米(nm)至300nm左右。該絕緣膜在形成電性電路的步驟中,能夠以電漿CVD法、濺鍍法等習知的成膜法形成。The electrical circuit 14 in the present embodiment includes a plurality of organic electroluminescent elements as a light source of a pixel and a pixel circuit that individually drives the organic electroluminescent element. The pixel circuit is viewed from one side in the thickness direction of the support substrate 12 (hereinafter, referred to as "viewing in a plane"), and is formed in an area where image information is displayed (hereinafter, referred to as an image display area 18). The situation). The pixel circuit is composed of an organic transistor, an inorganic transistor, a capacitor, or the like. A planarization film covering the pixel circuit is formed on the pixel circuit formed on the support substrate 12. The planarizing film is made of, for example, an organic insulating film or an inorganic insulating film. Further, since a part of the insulating film is heated while the glass frit is heated to be melted, it is preferable to use a film having heat resistance for the insulating film. Therefore, in the insulating film, the insulating film provided in the portion heated when the glass frit is heated to melt is preferably composed of an inorganic insulating film from the viewpoint of heat resistance. As such an inorganic insulating film, for example, a metal oxide film such as a tantalum oxide film, a tantalum nitride film, or a hafnium oxynitride film can be used. The thickness of the inorganic insulating film is usually from about 50 nanometers (nm) to about 300 nm. In the step of forming an electric circuit, the insulating film can be formed by a conventional film forming method such as a plasma CVD method or a sputtering method.
複數個有機電場發光元件係設置於像素電路上。亦即有機電場發光元件,係在圖像顯示區域18中設置於前述平坦化膜上。有機電場發光元件,係例如配置成矩陣狀、且在圖像顯示區域18中向列方向X以及行方向Y分別空開預定的間隔而配置。有機電場發光元件與像素電路,係透過向厚度方向貫穿平坦化膜的導電體而電性連接。A plurality of organic electroluminescent elements are disposed on the pixel circuit. That is, the organic electric field light-emitting element is provided on the flattening film in the image display region 18. The organic electroluminescent elements are arranged, for example, in a matrix, and are arranged in the image display region 18 at a predetermined interval in the column direction X and the row direction Y, respectively. The organic electroluminescence element and the pixel circuit are electrically connected to each other through a conductor that penetrates the planarization film in the thickness direction.
如前所述電性電路14,係設置於在支撐基板12上所設定之密封區域13內。換言之,密封區域13,係設定於包含設置有電性電路14之圖像顯示區域18之區域。As described above, the electrical circuit 14 is disposed in the sealing region 13 defined on the support substrate 12. In other words, the sealing region 13 is set in a region including the image display region 18 in which the electrical circuit 14 is provided.
設置有電性電路14的支撐基板12,係例如藉由玻璃板、金屬板、樹脂薄膜、以及前述諸者的疊層體所構成。朝向支撐基板12射出光之所謂的底部發光(bottom emission)型的有機電場發光元件搭載於支撐基板12時,支撐基板12係藉由顯示光穿透性之構件所構成。The support substrate 12 on which the electrical circuit 14 is provided is formed, for example, by a glass plate, a metal plate, a resin film, and a laminate of the above. When a so-called bottom emission type organic electroluminescence element that emits light toward the support substrate 12 is mounted on the support substrate 12, the support substrate 12 is formed by a member that exhibits light transmittance.
在顯示裝置11中,設置有用以將預定的電性信號輸入至電性電路14的複數條電性配線15。所謂的預定的電性信號,係指供以使複數個有機電場發光元件分別以預定的發光強度進行發光的電性信號,例如係指:用以個別地選擇使複數個有機電場發光元件之中應使之發光的有機電場發光元件的電性信號、用以指定有機電場發光元件之發光強度的電性信號。因為在顯示裝置11設置有複數個有機電場發光元件,故形成需要用以傳輸電性信號的複數個電性配線。In the display device 11, a plurality of electrical wirings 15 for inputting a predetermined electrical signal to the electrical circuit 14 are provided. The predetermined electrical signal refers to an electrical signal for causing a plurality of organic electroluminescent elements to emit light at a predetermined luminous intensity, for example, for individually selecting a plurality of organic electric field light-emitting elements. An electrical signal of an organic electroluminescent element that emits light, and an electrical signal that specifies the luminous intensity of the organic electroluminescent element. Since a plurality of organic electric field light-emitting elements are provided on the display device 11, a plurality of electrical wirings for transmitting electrical signals are formed.
前述電性信號係從外部的電性信號輸入輸出源19輸入至電性電路14。在顯示裝置11中,電性信號輸入輸出源19係藉由所謂的驅動電路所實現。複數個電性配線15,係因為為了連接電性信號輸入輸出源19與電性電路14所設置,故在支撐基板12上,以從密封區域13內向密封區域13外延伸之方式而設置。另外,在該複數個電性配線15上亦有設置絕緣膜之情形。The electrical signal is input from the external electrical signal input/output source 19 to the electrical circuit 14. In the display device 11, the electrical signal input/output source 19 is realized by a so-called drive circuit. Since the plurality of electrical wirings 15 are provided for connecting the electrical signal input/output source 19 and the electrical circuit 14, the support substrate 12 is provided to extend from the inside of the sealing region 13 to the outside of the sealing region 13. Further, a case where an insulating film is provided on the plurality of electrical wirings 15 is also provided.
如第1圖所示,在本實施形態中,複數個電性配線15,係通過矩形之密封區域13之外緣的一邊,從密封區域13內向密封區域13外延伸,俾朝向電性信號輸入輸出源19集聚。複數個電性配線15,亦可以電性電路14為中心,從密封區域13內向密封區域13外呈放射狀延伸。另外,電性信號輸入輸出源19,設置於相較於密封區域13更靠近外側,如本實施形態電性裝置(顯示裝置11)可具備作為驅動電路,再者,電性信號輸入輸出源19,亦可不設置在電性裝置。As shown in Fig. 1, in the present embodiment, a plurality of electrical wires 15 extend from the inside of the sealing region 13 to the outside of the sealing region 13 through one side of the outer edge of the rectangular sealing region 13, and the 俾 is directed to the electrical signal input. The output source 19 is agglomerated. The plurality of electrical wires 15 may extend radially from the inside of the sealing region 13 to the outside of the sealing region 13 around the electrical circuit 14 . Further, the electric signal input/output source 19 is provided closer to the outside than the sealing region 13, and the electric device (display device 11) of the present embodiment may be provided as a drive circuit, and further, an electric signal input/output source 19 It may not be installed in an electrical device.
密封構件16,係在支撐基板12上,沿著密封區域13之外緣以包圍密封區域13之方式而設置。換言之,密封區域13,係為被密封構件16所包圍之區域,而其外緣係由密封構件16所界定。如前述複數個電性配線15係從密封區域13內向密封區域外延伸而設置,故沿著密封區域之外緣而延伸的密封構件16,係於平面觀看時以交叉於複數個電性配線15之方式而配置。The sealing member 16 is attached to the support substrate 12 along the outer edge of the sealing region 13 so as to surround the sealing region 13. In other words, the sealing region 13 is the region surrounded by the sealing member 16, and its outer edge is defined by the sealing member 16. Since the plurality of electrical wirings 15 are provided extending from the inside of the sealing region 13 to the outside of the sealing region, the sealing member 16 extending along the outer edge of the sealing region is intersected by the plurality of electrical wirings 15 when viewed in plan. Configured in a way.
參照第3圖及第4圖,針對顯示裝置之更具體之構成進行說明。第3圖係示意性顯示放大在平面觀看中密封構件16與電性配線15所交差之區域(區域A:參照第1圖)之圖。第4圖係為在第3圖所示之剖面線IV-IV之位置所剖面之顯示裝置的示意性剖面圖。A more specific configuration of the display device will be described with reference to FIGS. 3 and 4. Fig. 3 is a view schematically showing an enlarged region (region A: see Fig. 1) in which the sealing member 16 and the electric wiring 15 intersect each other in plan view. Fig. 4 is a schematic cross-sectional view showing a display device having a cross section taken along the line IV-IV shown in Fig. 3.
在以下的說明中,會有將在密封構件16的延伸全區域之中,於平面觀看,電性配線15與密封構件16所交叉而重疊之區域稱為交叉區域(L1),而將除了該交叉區域外之剩餘區域稱為非交叉區域之情形。In the following description, a region in which the electrical wiring 15 and the sealing member 16 intersect and overlap each other in the entire extended region of the sealing member 16 will be referred to as an intersection region (L1), and The remaining area outside the intersection area is called the non-intersection area.
如第3圖所示,複數個電性配線15,在平面觀看以相互相離而配置。密封構件16,係為設置於複數個電性配線15上,且以跨及於複數個電性配線15之方式連續性地延伸。As shown in Fig. 3, a plurality of electrical wirings 15 are arranged to be separated from each other when viewed in plan. The sealing member 16 is provided on a plurality of electrical wirings 15 and extends continuously across a plurality of electrical wirings 15.
在電性配線15與密封構件16所交叉之交叉區域中,電性配線15係藉由透光性的電性配線所構成。電性配線15,係以藉由透光性的電性配線僅構成交叉區域及其附近,並藉由電阻係數小於透光性之電性配線的電性配線構成交叉區域以及其附近以外的部位者較佳。因可減低電性配線全體之電阻之緣故。然而,電性配線15其全體亦可藉由透光性之電性配線所構成。另外,一般非透光性之電性配線因電阻係數小於透光性之電性配線,故針對電性配線15之中的交叉區域以及其附近以外的部位,就電阻係數小於透光性之電性配線的電性配線而言,可採用非透光性的電性配線。In the intersection region where the electrical wiring 15 and the sealing member 16 intersect, the electrical wiring 15 is formed by a light-transmissive electrical wiring. The electrical wiring 15 is configured such that only the intersection region and the vicinity thereof are formed by the transparent electrical wiring, and the electrical wiring of the electrical wiring having a smaller resistivity than the optically conductive wiring constitutes an intersection region and a portion other than the vicinity thereof. Better. This is because the electrical resistance of the entire electrical wiring can be reduced. However, the entire electrical wiring 15 may be formed of a light-transmitting electrical wiring. In addition, since the electrical wiring having a non-translucent property is smaller than the electrically conductive wiring having a lower electric resistance, the electric resistance is smaller than the transmissive electric power in the intersection region of the electrical wiring 15 and the portion other than the vicinity thereof. For the electrical wiring of the wiring, a non-transparent electrical wiring can be used.
如第4圖所示,在本實施形態的電性配線15,係由像素側配線部15a、交叉配線部15b、以及端子側配線部15c所構成。像素側配線部15a,係配置在密封區域13內,亦即是配置在像素電路側的電性配線,且其一端連接於電性電路14。交叉配線部15b,係為配置於交叉區域以及其附近的電性配線。端子側配線部15c,係配置於密封區域13外的電性配線,且其一端連接於電性信號輸入輸出源19的端子。交叉配線部15b之其一端係與像素側配線部15a的另一端物理性地接觸而連接,且交叉配線部15b的另一端,係與端子側配線部15c的另一端物理性地連接。如此,則電性連接像素側配線部15a、交叉配線部15b、端子側配線部15c。另外,在第4圖所示之構成中,交叉配線部15b的兩端部係分別以搭在像素側配線部15a上以及端子側配線部15c上之方式連接。然而,交叉配線部15b、與像素側配線部15a及端子側配線部15c,以像素側配線部15a以及端子側配線部15c中的一方搭在交叉配線部15b之兩端部並且交叉配線部15b搭在像素側配線部15a以及端子側配線部15c中的另一方、或者將像素側配線部15a以及端子側配線部15c之兩方搭在交叉配線部15b之方式構成亦可。As shown in FIG. 4, the electrical wiring 15 of the present embodiment is composed of a pixel-side wiring portion 15a, a cross-wiring portion 15b, and a terminal-side wiring portion 15c. The pixel-side wiring portion 15a is disposed in the sealing region 13, that is, an electrical wiring disposed on the pixel circuit side, and one end thereof is connected to the electrical circuit 14. The cross wiring portion 15b is an electrical wiring disposed in the intersection region and the vicinity thereof. The terminal-side wiring portion 15c is an electrical wiring disposed outside the sealing region 13, and one end thereof is connected to a terminal of the electrical signal input/output source 19. One end of the cross wiring portion 15b is physically connected to the other end of the pixel side wiring portion 15a, and the other end of the cross wiring portion 15b is physically connected to the other end of the terminal side wiring portion 15c. In this manner, the pixel-side wiring portion 15a, the intersecting wiring portion 15b, and the terminal-side wiring portion 15c are electrically connected. In the configuration shown in FIG. 4, both end portions of the cross wiring portion 15b are connected so as to be placed on the pixel side wiring portion 15a and the terminal side wiring portion 15c, respectively. In the cross-wiring portion 15b, the pixel-side wiring portion 15a, and the terminal-side wiring portion 15c, one of the pixel-side wiring portion 15a and the terminal-side wiring portion 15c is placed on both ends of the intersecting wiring portion 15b and the wiring portion 15b is crossed. The other of the pixel side wiring portion 15a and the terminal side wiring portion 15c or the pixel side wiring portion 15a and the terminal side wiring portion 15c may be placed on the cross wiring portion 15b.
在本實施形態中交叉配線部15b係藉由透光性之電性配線所構成;而像素側配線部15a及端子側配線部15c係分別為由電阻係數小於交叉配線部15b的電性配線,且為藉由非透光性之電性配線所構成。In the present embodiment, the cross-wiring portion 15b is formed of a light-transmissive electric wiring, and the pixel-side wiring portion 15a and the terminal-side wiring portion 15c are each an electrical wiring having a smaller electric resistance than the cross wiring portion 15b. It is also composed of electrically non-transparent electrical wiring.
交叉配線部15b之延伸方向的長度L2,從電阻的觀點而言係短者為佳。在此,交叉配線部15b之延伸方向的長度L2,係指像素側配線部15a之一端、與端子側配線部15c之一端之間的交叉配線部15b的長度。如於後所述,對交叉配線部15b上的密封構件16進行照射電磁射束(beam)。因此,交叉配線部15b之延伸方向的長度L2,以大於照射於密封構件16之電磁射束的照點(spot)直徑者為佳。此乃能夠防止電磁射束照射於非透光性之電性配線之緣故。The length L2 of the extending direction of the cross wiring portion 15b is preferably short from the viewpoint of electric resistance. Here, the length L2 in the extending direction of the cross wiring portion 15b refers to the length of the cross wiring portion 15b between one end of the pixel side wiring portion 15a and one end of the terminal side wiring portion 15c. As will be described later, the sealing member 16 on the cross wiring portion 15b is irradiated with an electromagnetic beam. Therefore, the length L2 of the extending direction of the cross wiring portion 15b is preferably larger than the spot diameter of the electromagnetic beam irradiated to the sealing member 16. This is to prevent the electromagnetic beam from being irradiated to the electrically non-transparent electrical wiring.
在本說明書中電磁射束之照點直徑,係指在與往照射方向延伸之光軸正交之平面切斷電磁射束時,相對於光軸上的強度,在前述平面上能夠連結在強度成為「1/e2」之位置的略圓形之閉曲線的直徑。符號「e」係表示納皮爾對數。另外,略圓形的閉曲線並不一定會成為真圓,惟在求略圓形之閉曲線的直徑時,只要使略圓形之閉曲線近似圓而計算出其直徑即可。交叉配線部15b之延伸方向的長度L2,以在密封構件16之寬度L1的3倍左右為佳。在此,密封構件16之寬度L1,係指與支撐基板12之厚度方向以及密封構件16之延伸方向正交之寬度方向的密封構件16之長度。In the present specification, the diameter of the spot of the electromagnetic beam means that the intensity of the electromagnetic beam on the plane perpendicular to the optical axis extending in the direction of the illumination is connected to the intensity on the optical axis. The diameter of the slightly closed curve that becomes the position of "1/e 2 ". The symbol "e" indicates the Napier logarithm. Further, the slightly circular closed curve does not necessarily become a true circle. However, when the diameter of the circular closed curve is approximated, the diameter of the slightly circular closed curve may be approximated by a circle to calculate the diameter. The length L2 of the extending direction of the cross wiring portion 15b is preferably about three times the width L1 of the sealing member 16. Here, the width L1 of the sealing member 16 means the length of the sealing member 16 in the width direction orthogonal to the thickness direction of the support substrate 12 and the extending direction of the sealing member 16.
電性配線15之中透光性之電性配線,係藉由金屬薄膜、透明導電性氧化物等之薄膜所構成。具體而言,係藉由Au、Ag、Al、Cu、Cr、W、Mo、Mg、Ta、Ti、銦錫氧化物(indium tin oxide,ITO)、銦鋅氧化物(indium zinc oxide,IZO)等之薄膜或者前述諸者的疊層膜所構成。另外在採用金屬薄膜時藉由極薄化厚度可作為透光性電極使用。然而,若金屬薄膜的厚度過薄則電阻會變高,故對於透光性之電性配線而言,以使用ITO、IZO等透明導電性氧化物之薄膜為佳。The light-transmitting electrical wiring in the electrical wiring 15 is formed of a thin film such as a metal thin film or a transparent conductive oxide. Specifically, it is made of Au, Ag, Al, Cu, Cr, W, Mo, Mg, Ta, Ti, indium tin oxide (ITO), indium zinc oxide (IZO). A thin film or a laminated film of the foregoing. Further, when a metal thin film is used, it can be used as a translucent electrode by an extremely thin thickness. However, when the thickness of the metal thin film is too small, the electric resistance becomes high. Therefore, it is preferable to use a transparent conductive oxide film such as ITO or IZO for the translucent electrical wiring.
透光性之電性配線的厚度,係以50nm以上未達300nm者為佳。The thickness of the light-transmitting electrical wiring is preferably 50 nm or more and less than 300 nm.
再者,透光性之電性配線的電阻係數,係以未滿300微歐姆-公分(μΩcm)為佳。另外不特別限定透光性之電性配線之電阻係數的下限值。透光性之電性配線的電阻係數,通常為80μΩcm以上。Further, the electric resistance of the translucent electrical wiring is preferably less than 300 micro ohm-cm (μΩcm). Further, the lower limit value of the resistivity of the light-transmitting electrical wiring is not particularly limited. The electric resistance of the translucent electrical wiring is usually 80 μΩcm or more.
透光性之電性配線,只要能夠使照射於密封材料16之電磁射束穿透即可。透光性之電性配線,係例如以電磁射束之全光線穿透率在70%以上為佳,以在80%以上更佳。再者,透光性之電性配線,係例如以可視光穿透率80%以上為佳,以在90%以上更佳。The translucent electrical wiring can be made to penetrate the electromagnetic beam that is irradiated onto the sealing material 16. The light-transmitting electrical wiring is preferably such that the total light transmittance of the electromagnetic beam is 70% or more, and more preferably 80% or more. Further, the translucent electrical wiring is preferably, for example, a visible light transmittance of 80% or more, more preferably 90% or more.
在電性配線之中,像素部配線15a及端子部配線15c之顯示非透光性的電性配線,係例如藉由金屬薄膜所構成。具體而言,係藉由Au、Ag、Al、Cu、Cr、W、Mg、Ta、Ti、以及Mo等薄膜或者前述諸者的疊層膜所構成。顯示非透光性之電性配線,係因能夠藉由增厚厚度來降低電阻,故其厚度,通常係為300埃()至10000,且以1000至5000為佳。Among the electrical wirings, the non-translucent electrical wirings of the pixel portion wiring 15a and the terminal portion wiring 15c are formed of, for example, a metal thin film. Specifically, it is composed of a film of Au, Ag, Al, Cu, Cr, W, Mg, Ta, Ti, and Mo, or a laminated film of the above. The electrical wiring showing non-transparent properties is capable of reducing the resistance by thickening the thickness, so the thickness is usually 300 angstroms ( ) to 10000 And with 1000 To 5000 It is better.
如第3圖以及第4圖所示,於密封構件16在與電性配線15重疊的部位,電性配線15係藉由透光性之電性配線所構成,故照射於密封構件16的電磁射束會穿透電性配線15。藉此,電性配線15能夠吸收電磁射束的能量、以及能避免由於電磁射束的照射而使電性配線的溫度上昇,結果能夠減小電性配線15的存在而帶給密封構件16之溫度上昇的影響。因此,即使在平面觀看下於電性配線15上設置有密封構件16,亦能夠同樣地加熱在交叉區域的密封構件16與在非交叉區域的密封構件16,而能夠抑制加熱溫度的不均勻,使密接性、氣密性均勻一致,因此能夠使密封的可靠性提升。As shown in FIG. 3 and FIG. 4, in the portion where the sealing member 16 overlaps the electrical wiring 15, the electrical wiring 15 is formed of a translucent electrical wiring, so that the electromagnetic member is irradiated to the sealing member 16. The beam will penetrate the electrical wiring 15. Thereby, the electrical wiring 15 can absorb the energy of the electromagnetic beam and can prevent the temperature of the electrical wiring from rising due to the irradiation of the electromagnetic beam, and as a result, the presence of the electrical wiring 15 can be reduced and brought to the sealing member 16. The effect of temperature rise. Therefore, even if the sealing member 16 is provided on the electric wiring 15 in plan view, the sealing member 16 in the intersecting region and the sealing member 16 in the non-intersecting region can be similarly heated, and unevenness in heating temperature can be suppressed. Since the adhesion and the airtightness are uniform, the reliability of the seal can be improved.
密封構件16的寬度及厚度,係考量所需之氣密度、密封材料之特性等而設定。密封構件16的寬度L1,通常在500μm至2000μm左右,而密封構件16的厚度,通常在5μm至50μm左右。The width and thickness of the sealing member 16 are set in consideration of the required gas density, the characteristics of the sealing material, and the like. The width L1 of the sealing member 16 is usually about 500 μm to 2000 μm, and the thickness of the sealing member 16 is usually about 5 μm to 50 μm.
密封基板17,係透過密封構件16貼合於支撐基板12。密封基板17,係藉由玻璃板、金屬板、樹脂薄膜、以及前述諸者的疊層體所構成。另外,有機電場發光元件為朝向密封基板17射出光之所謂的頂部發光型之元件時,密封基板17係藉由顯示光穿透性之構件所構成。The sealing substrate 17 is bonded to the support substrate 12 through the sealing member 16. The sealing substrate 17 is composed of a glass plate, a metal plate, a resin film, and a laminate of the above. Further, when the organic electroluminescence device is a so-called top emission type element that emits light toward the sealing substrate 17, the sealing substrate 17 is formed of a member that exhibits light transmittance.
接著針對屬於電性裝置之顯示裝置的製造方法進行說明。Next, a description will be given of a manufacturing method of a display device belonging to an electrical device.
本發明之電性裝置的製造方法,係包含:準備設定有密封區域、並且設置有設置於該密封區域內的電性電路以及將前述電性信號輸入輸出源與前述電性電路進行電性連接的電性配線的支撐基板之步驟;沿著前述密封區域的外緣,進行供給密封材料之步驟;透過密封材料將前述密封基板貼合於前述支撐基板之步驟;對密封材料照射電磁射束,加熱溶融前述密封材料之步驟;以及冷卻前述密封材料,使之硬化而構成前述密封構件之步驟。A method of manufacturing an electrical device according to the present invention includes: preparing a sealed region, and providing an electrical circuit disposed in the sealed region; and electrically connecting the electrical signal input/output source to the electrical circuit a step of supporting the substrate with the electrical wiring; a step of supplying the sealing material along the outer edge of the sealing region; a step of bonding the sealing substrate to the supporting substrate through the sealing material; and irradiating the sealing material with the electromagnetic beam, a step of heating and melting the sealing material; and a step of cooling the sealing material and hardening it to form the sealing member.
在本步驟中,首先準備設置有電性電路14以及電性配線15的支撐基板12。在本實施形態中,例如準備在支撐基板12上形成由驅動有機電場發光元件之電路以及複數個有機電場發光元件所構成的電性電路14、以及電性配線15。另外在本步驟中從市面取得預先設置有電性電路14以及電性配線15之基板作為支撐基板12亦可。In this step, first, the support substrate 12 provided with the electrical circuit 14 and the electrical wiring 15 is prepared. In the present embodiment, for example, an electric circuit 14 composed of a circuit for driving an organic electroluminescence element and a plurality of organic electroluminescent elements, and an electrical wiring 15 are formed on the support substrate 12. In addition, in this step, a substrate on which the electrical circuit 14 and the electrical wiring 15 are provided in advance may be obtained as the support substrate 12 from the market surface.
此外,準備支撐基板12時,首先準備基板,並在基板形成驅動有機電場發光元件之電路以及電性配線15,進一步藉由在電性配線15上形成複數個有機電場發光元件,以作為設置有電性電路14以及電性配線15之支撐基板12亦可。Further, when the support substrate 12 is prepared, the substrate is first prepared, and a circuit for driving the organic electroluminescent element and the electrical wiring 15 are formed on the substrate, and a plurality of organic electric field light-emitting elements are further formed on the electrical wiring 15 as The electric circuit 14 and the support substrate 12 of the electric wiring 15 may be used.
已說明之像素電路以及電性配線15,可採用眾所周知之半導體元件的製造技術進行形成。另外,電性配線15,能夠藉由例如首先形成像素側配線部15a以及端子側配線部15c,之後再形成交叉配線部15b,或者首先形成交叉配線部15b、之後再形成像素側配線部15a以及端子側配線部15c而進行形成。電性配線15,能夠藉由例如塗佈法、蒸鍍法、濺鍍法等進行形成。The pixel circuit and the electrical wiring 15 which have been described can be formed by a known manufacturing technique of a semiconductor element. In addition, for example, the pixel side wiring portion 15a and the terminal side wiring portion 15c are formed first, and then the intersection portion 15b is formed, or the intersection portion 15b is formed first, and then the pixel side wiring portion 15a is formed. The terminal side wiring portion 15c is formed. The electrical wiring 15 can be formed by, for example, a coating method, a vapor deposition method, a sputtering method, or the like.
此外,電性配線15,能夠藉由光微影成像法進行圖案形成。Further, the electrical wiring 15 can be patterned by photolithography.
有機電場發光元件,係含有一對的電極、以及設置在一對的電極間的發光層所構成。The organic electroluminescent device is composed of a pair of electrodes and a light-emitting layer provided between the pair of electrodes.
另外,在有機電場發光元件除電極以及發光層之外,會有因應需要設置預定之層的情形。就該種之預定之層而言,可列舉例如電洞注入層、電洞傳輸層、電子阻擋層、電子注入層、電子傳輸層以及電洞阻擋層等。有機電場發光元件,係能夠藉由依序疊層構成諸該有機電場發光元件之複數層而形成在像素電路上。雖在有機電場發光元件中有低分子型之有機電場發光元件、以及高分子型之有機電場發光元件,惟本發明係均可應用於任合型之有機電場發光元件。有機電場發光元件的各層係能夠採用蒸鍍法、濺鍍法等之乾式法,或者噴墨(ink jet)法、噴嘴印刷(nozzle printing)法、旋轉塗佈(spin coat)法等濕式法等的預定方法進行依序疊層。Further, in addition to the electrode and the light-emitting layer of the organic electroluminescence element, a predetermined layer may be provided as needed. Examples of such a predetermined layer include a hole injection layer, a hole transport layer, an electron blocking layer, an electron injection layer, an electron transport layer, and a hole blocking layer. The organic electroluminescent device can be formed on a pixel circuit by laminating a plurality of layers of the organic electroluminescent device. Although the organic electroluminescent device has a low molecular type organic electroluminescent device and a polymer type organic electroluminescent device, the present invention can be applied to any type of organic electroluminescent device. Each layer of the organic electroluminescence device can be a dry method such as a vapor deposition method or a sputtering method, or a wet method such as an ink jet method, a nozzle printing method, or a spin coating method. The predetermined method of stacking is sequentially performed.
在本步驟中,係沿著密封區域13的外緣供給密封材料。密封材料,係只要供給於支撐基板12以及密封基板17之中的至少任一者即可。In this step, the sealing material is supplied along the outer edge of the sealing region 13. The sealing material may be supplied to at least one of the support substrate 12 and the sealing substrate 17.
在本實施形態中係在密封基板17上供給密封材料。In the present embodiment, a sealing material is supplied onto the sealing substrate 17.
就密封材料而言在本實施形態中係採用膏狀的玻璃料劑。膏狀的玻璃料劑,係含有玻璃料玻璃粉末與媒液(vehicle)所構成。媒液,係由黏著劑(binder)、與使該黏著劑以及玻璃料玻璃粉末分散之溶劑所構成。In the present embodiment, a paste-like glass frit is used as the sealing material. The paste-like glass frit contains a glass frit glass powder and a vehicle. The vehicle liquid is composed of a binder and a solvent for dispersing the binder and the glass frit powder.
在玻璃料玻璃粉末中,可採用含有以V2O5、VO、SnO、SnO2、P2O5、Bi2O3、B2O3、ZnO、以及SiO2等為成份之低融點玻璃粉末。就玻璃料玻璃粉末而言,可使用例如旭硝子股份有限公司所製BAS115、BNL115BB-N、FP-74(商品名)等。In the frit glass powder, a low melting point containing V 2 O 5 , VO, SnO, SnO 2 , P 2 O 5 , Bi 2 O 3 , B 2 O 3 , ZnO, and SiO 2 may be used. Glass powder. For the glass frit glass powder, for example, BAS115, BNL115BB-N, FP-74 (trade name) manufactured by Asahi Glass Co., Ltd., or the like can be used.
就黏著劑而言,可採用硝化纖維素(nitro cellulose)、丙烯酸甲酯(methyl acrylate)、丙烯酸乙酯(ethyl acrylate)、烯丙酸丁酯(butyl acrylate)、乙基纖維素(ethyl cellulose)、羥丙基纖維素(hydroxypropyl cellulose)、丁基纖維素(butyl cellulose)等。For the adhesive, nitro cellulose, methyl acrylate, ethyl acrylate, butyl acrylate, ethyl cellulose may be used. , hydroxypropyl cellulose, butyl cellulose, and the like.
就溶劑而言,可採用丁基卡必醇醋酸酯(butyl carbitol acetate)、二乙酸丙酯(propylene glycol diacetate)、丁酮(methyl ethyl ketone)、醋酸乙基卡必醇酯(ethyl carbitol acetate)、乙酸戊酯(amyl acetate)等。As the solvent, butyl carbitol acetate, propylene glycol diacetate, methyl ethyl ketone, ethyl carbitol acetate may be used. , amyl acetate and the like.
密封材料,例如藉由預定的塗佈法,供給於支撐基板12以及密封基板17之中的至少任一者。密封材料,係藉由例如網版印刷法、平版印刷法、噴墨印刷法以及噴嘴印刷法等之印刷法、並且採用分配器(dispenser)之塗佈法等進行供給。諸該法中以網版印刷法為佳。因在被塗佈面上容易控制密封材料之厚度的均勻性、塗佈狀態的再現性等、並且能夠以短時間的塗佈之緣故。The sealing material is supplied to at least one of the support substrate 12 and the sealing substrate 17, for example, by a predetermined coating method. The sealing material is supplied by a printing method such as a screen printing method, a lithography method, an inkjet printing method, or a nozzle printing method, and a coating method using a dispenser. Screen printing is preferred among the various methods. It is easy to control the uniformity of the thickness of the sealing material, the reproducibility of the coating state, and the like on the coated surface, and it is possible to apply it in a short time.
接著進行在本實施形態的初步煅燒。藉由進行初步煅燒,能夠去除密封材料之中的不必要成份。亦即,藉由進行初步煅燒汽化溶劑並且燃燒黏著劑,從玻璃料劑去除媒液。結果,在密封基板17上殘留玻璃料玻璃粉末。初步煅燒,係以能夠去除媒液之溫度進行,例如以300℃至500℃進行。另外,除密封材料之外,在密封基板17設置有藉由進行加熱而產生化學變化的構件時,在初步煅燒中,以僅選擇性地加熱密封材料以及其附近為佳。例如在密封基板17上亦構成有電性電路14的一部分時,則以不加熱形成在密封基板17上之電性電路14之方式進行初步煅燒者為佳。此外,在本實施形態中,雖然在密封基板17上供給密封材料,惟在初步地在支撐基板12上供給密封材料,且進一步進行初步煅燒密封材料時,為了防止由於初步煅燒使有機電場發光元件以及像素電路劣化,以僅加熱密封材料以及其周邊區域者為佳。Next, preliminary calcination in this embodiment is carried out. By performing preliminary calcination, unnecessary components in the sealing material can be removed. That is, the vehicle liquid is removed from the frit by performing preliminary calcination of the vaporizing solvent and burning the adhesive. As a result, the frit glass powder remains on the sealing substrate 17. The preliminary calcination is carried out at a temperature capable of removing the vehicle liquid, for example, at 300 ° C to 500 ° C. Further, in addition to the sealing material, when the sealing substrate 17 is provided with a member which undergoes chemical change by heating, it is preferable to selectively heat only the sealing material and the vicinity thereof in the preliminary firing. For example, when a part of the electric circuit 14 is also formed on the sealing substrate 17, it is preferable to perform preliminary calcination without heating the electric circuit 14 formed on the sealing substrate 17. Further, in the present embodiment, although the sealing material is supplied onto the sealing substrate 17, when the sealing material is initially supplied on the supporting substrate 12, and the preliminary sealing of the sealing material is further performed, in order to prevent the organic electroluminescent element from being caused by the preliminary calcination And the pixel circuit is degraded to preferably only heat the sealing material and its surrounding area.
接著將密封基板17貼合於支撐基板12。在本實施形態中,採用光硬化樹脂進行初步密封。初步密封,係例如首先在所供給的密封材料之外側的區域中沿著密封材料供給光硬化性樹脂,接著,在真空中或者惰性氣體之環境中進行貼合密封基板17與支撐基板12。Next, the sealing substrate 17 is bonded to the support substrate 12. In the present embodiment, preliminary sealing is performed using a photocurable resin. The preliminary sealing is, for example, first, the photocurable resin is supplied along the sealing material in the region on the outer side of the supplied sealing material, and then the sealing substrate 17 and the supporting substrate 12 are bonded in a vacuum or an inert gas atmosphere.
密封基板17與支撐基板12的貼合係能夠以調正標示(alignment mark)為基準而進行。例如分別在密封基板17以及支撐基板12預先設置調正標示,以光學感測器辨識該調正標示的位置,復根據辨識的位置資訊,進行密封基板17以及支撐基板12的對位,之後,只要貼合密封基板17與支撐基板12即可。The bonding of the sealing substrate 17 and the support substrate 12 can be performed based on an alignment mark. For example, a correction mark is previously provided on the sealing substrate 17 and the support substrate 12, and the position of the alignment mark is recognized by the optical sensor, and the alignment of the sealing substrate 17 and the support substrate 12 is performed based on the recognized position information. It suffices that the sealing substrate 17 and the support substrate 12 are bonded together.
貼合密封基板17與支撐基板12後,對光硬化性樹脂照射光,使光硬化性樹脂進行硬化。藉此初步密封密封區域13。就光硬化性樹脂而言,例如可採用紫外線硬化型環氧樹脂、紫外線硬化型丙烯酸樹脂。在第1圖至第4圖中雖未顯示光硬化性樹脂,惟進行初步密封時,因光硬化性樹脂沿著密封構件16而延伸,故在實際中,例如在第1圖中表示密封構件16之線與表示光硬化性樹脂之線的兩條線,係沿著密封區域13之外緣而延伸形成。另外,毗連設置光硬化性樹脂與密封構件16時,在以雷射(電磁射束)使密封材料加熱溶融時,因有燃燒光硬化性樹脂之虞,故光硬化性樹脂與密封構件16係以隔離例如0.5mm以上進行配置者為佳。After bonding the sealing substrate 17 and the support substrate 12, the photocurable resin is irradiated with light to cure the photocurable resin. Thereby the sealing area 13 is initially sealed. As the photocurable resin, for example, an ultraviolet curable epoxy resin or an ultraviolet curable acrylic resin can be used. In the first to fourth figures, the photocurable resin is not shown, but when the preliminary sealing is performed, since the photocurable resin extends along the sealing member 16, in actuality, for example, the sealing member is shown in FIG. A line of 16 and two lines representing the line of the photocurable resin are formed to extend along the outer edge of the sealing region 13. Further, when the photocurable resin and the sealing member 16 are provided adjacent to each other, when the sealing material is heated and melted by laser (electromagnetic beam), since the photocurable resin is burned, the photocurable resin and the sealing member 16 are used. It is preferable to arrange it by isolating, for example, 0.5 mm or more.
此外,就其他的實施形態而言,在初步密封雖為必要部分,惟在玻璃料劑密封步驟後,亦可將在電性裝置之構成中非必要部分,從電性裝置分離。例如在使用於初步密封之光硬化性樹脂、與密封構件16之間進行切斷,將配置在較密封構件16外側的光硬化性樹脂之部分作為非必要部分而從電性裝置分離。此情形時,在初步密封之時,只要使光硬化性樹脂,從密封構件16隔離達預定之距離,而包圍密封構件16進行配置即可。Further, in other embodiments, although the preliminary sealing is an essential part, after the glass frit sealing step, unnecessary portions of the electrical device may be separated from the electrical device. For example, the photocurable resin used for preliminary sealing is cut between the sealing member 16 and the portion of the photocurable resin disposed outside the sealing member 16 is separated from the electrical device as an unnecessary portion. In this case, at the time of preliminary sealing, the photocurable resin may be separated from the sealing member 16 by a predetermined distance, and may be disposed to surround the sealing member 16.
在真空中進行初步密封時,真空度係以1Pa至90kPa為佳。此外,在惰性氣體環境中進行初部密封時,以在露點-70℃以下之惰性氣體環境中進行初步密封為佳。另外,就惰性氣體而言,係可採用氬氣(argon gas)、氮氣。此外,在對光硬化性樹脂照射之光中,可採用紫外線。如此,藉由在真空中或者惰性氣體環境中進行初步密封,即可較在大氣中進行初步密封更使密封區域中的水份濃度及氧濃度減低。另外,在初步密封中,雖並不一定為高氣密度,惟在初步密封之狀態中藉由進行後述的玻璃料密封,即可提高密封區域的氣密度,藉此可將密封區域中的水份濃度及氧濃度保持於較大氣更減低的狀態。When the preliminary sealing is performed in a vacuum, the degree of vacuum is preferably from 1 Pa to 90 kPa. Further, in the case of initial sealing in an inert gas atmosphere, it is preferred to perform preliminary sealing in an inert gas atmosphere having a dew point of -70 ° C or less. Further, as the inert gas, argon gas or nitrogen gas can be used. Further, in the light irradiated to the photocurable resin, ultraviolet rays can be used. Thus, by performing a preliminary seal in a vacuum or an inert gas atmosphere, the initial seal in the atmosphere can reduce the moisture concentration and the oxygen concentration in the sealed region. Further, in the preliminary sealing, although it is not necessarily a high gas density, in the state of the preliminary sealing, by performing the frit sealing described later, the gas density in the sealed region can be increased, whereby the water in the sealed region can be obtained. The concentration and oxygen concentration are kept in a state where the gas is more reduced.
在本實施形態中,初步密封後,在大氣中使密封材料加熱溶融。密封材料的加熱及溶融,係藉由對密封材料照射電磁射束而進行。In the present embodiment, after the preliminary sealing, the sealing material is heated and melted in the atmosphere. The heating and melting of the sealing material is performed by irradiating the sealing material with an electromagnetic beam.
電磁射束的照射,在本實施形態中,係從支撐基板12及密封基板17之中的密封基板17側進行。例如,將射出電磁射束之頭(以下,會有稱之為電磁照射頭之情形)配置於密封基板17上,而朝向密封基板17照射電磁射束。從電磁射束照射頭所射出之電磁射束,係穿透密封基板17,而照射於密封材料。在電磁射束中,適合採用能量密度高之光,故適合採用雷射光。此外,就電磁射束而言,係以使用使密封材料有效率地吸收光能量之波長的光,並且以高穿透率進行穿透密封基板17之波長的光為佳。換言之,對於密封基板17適合採用容易穿透電磁射束的構件,而對於密封材料適合採用容易吸收電磁射束的材料。使用於電磁射束之光的峰值波長係通常為190nm至1200nm,而以300nm至1100者為佳。就放射電磁射束之雷射裝置而言,例如可採用YAG雷射裝置、半導體雷射裝置、氬離子雷射裝置以及準分子雷射(eximer laser)裝置等。In the present embodiment, the irradiation of the electromagnetic beam is performed from the side of the sealing substrate 17 among the support substrate 12 and the sealing substrate 17. For example, a head that emits an electromagnetic beam (hereinafter, referred to as an electromagnetic head) is disposed on the sealing substrate 17, and an electromagnetic beam is irradiated toward the sealing substrate 17. The electromagnetic beam emitted from the electromagnetic beam irradiation head penetrates the sealing substrate 17 and is irradiated to the sealing material. In the electromagnetic beam, it is suitable to use light with high energy density, so it is suitable to use laser light. Further, in the case of the electromagnetic beam, it is preferable to use light having a wavelength at which the sealing material efficiently absorbs light energy, and light having a high transmittance to penetrate the wavelength of the sealing substrate 17. In other words, it is suitable for the sealing substrate 17 to employ a member that easily penetrates the electromagnetic beam, and for the sealing material, a material that easily absorbs the electromagnetic beam is suitably employed. The peak wavelength of the light used for the electromagnetic beam is usually from 190 nm to 1200 nm, and preferably from 300 nm to 1100. For the laser device that radiates the electromagnetic beam, for example, a YAG laser device, a semiconductor laser device, an argon ion laser device, and an eximer laser device can be employed.
電磁射束的照射,係例如可採用能將電磁射束頭3度空間地移動(掃瞄)的控制裝置。例如,只要在與密封材料之間空開預定的間隔配置電磁射束照射頭,並對密封材料照射電磁射束,且沿著密封材料使電持射束照射頭進行掃瞄即可。另外,電磁射束的照射,雖亦可使電磁射束的強度隨時間變動而進行,惟以不使電磁射束的強度變動,且遍及於配置有密封材料之全區域以相同強度照射電磁射束者為佳。此乃因裝置的設定變為簡易之緣故。The irradiation of the electromagnetic beam is, for example, a control device capable of spatially moving (scanning) the electromagnetic beam head by three degrees. For example, the electromagnetic beam irradiation head may be disposed at a predetermined interval from the sealing material, and the sealing material may be irradiated with an electromagnetic beam, and the electric beam irradiation head may be scanned along the sealing material. Further, the irradiation of the electromagnetic beam may be performed by varying the intensity of the electromagnetic beam with time, but the electromagnetic beam is not irradiated, and the electromagnetic field is irradiated with the same intensity over the entire area in which the sealing material is disposed. The beam is better. This is because the setting of the device has become simple.
此外,在改變電磁射束之強度時,雖亦會有形成需要降低電磁射束照射頭的掃瞄速度之情形,惟於一面保持一定強度,一面使電磁射束照射頭進行掃瞄時,因不需要降低掃瞄的速度,故可縮短在使電磁射束照射頭沿著密封材料繞行1周時所需的時間。另外,電磁射束的照射,對於被貼合之密封基板17以及支撐基板12,只要使電磁射束照射頭相對地進行掃瞄即可,惟不只限於電磁射束照射頭,例如藉由使被貼合之密封基板17以及支撐基板12移動而進行亦可,或者藉由使被貼合之密封基板17以及支撐基板12、與電磁射束照射頭之雙方移動而進行亦可。被貼合之密封基板17以及支撐基板12的移動,可在設置有移動機構的平台上,載置被貼合之密封基板17以及支撐基板12,而藉由使該平台移動而進行。In addition, when changing the intensity of the electromagnetic beam, there is a case where it is necessary to reduce the scanning speed of the electromagnetic beam irradiation head, but when the electromagnetic beam irradiation head is scanned while maintaining a certain strength, There is no need to reduce the speed of the scanning, so the time required for the electromagnetic beam irradiation head to circumnze the sealing material for one week can be shortened. Further, the irradiation of the electromagnetic beam may be performed by scanning the electromagnetic radiation head with respect to the sealed sealing substrate 17 and the supporting substrate 12, but it is not limited to the electromagnetic beam irradiation head, for example, by The bonded sealing substrate 17 and the supporting substrate 12 may be moved or may be moved by moving both the bonded sealing substrate 17 and the supporting substrate 12 and the electromagnetic beam irradiation head. The movement of the bonded sealing substrate 17 and the supporting substrate 12 can be performed by placing the bonded sealing substrate 17 and the supporting substrate 12 on the stage on which the moving mechanism is placed, and moving the platform.
電磁射束的照點直徑,以調整適宜者為佳。照點直徑的大小,可藉由採用聚光透鏡等光學要素進行調整。The diameter of the spot of the electromagnetic beam is preferably adjusted. The size of the spot diameter can be adjusted by using optical elements such as a condenser lens.
接著,冷卻已溶融之密封材料,且使之硬化形成密封構件16。另外,已溶融之密封材料,可藉由降低顯示裝置之周圍的溫度而進行冷卻,或者藉由自然冷卻而降低其溫度者。例如,因藉由停止電磁射束的照射密封材料的溫度即自然地進行下降,故已融融之密封材料便自然地硬化。如此,便形成密封構件16,而氣密地進行密封密封區域13。Next, the molten sealing material is cooled and hardened to form the sealing member 16. Further, the melted sealing material can be cooled by lowering the temperature around the display device, or can be lowered by natural cooling. For example, since the temperature of the sealing material is naturally lowered by stopping the irradiation of the electromagnetic beam, the melted sealing material naturally hardens. Thus, the sealing member 16 is formed, and the sealing portion 13 is hermetically sealed.
根據以上說明,在平面觀看中,在電性配線15與密封構件16進行交叉的交叉區域中,電性配線15因藉由透光性電性配線所構成,故照射於密封構件16的電磁射束會穿透電性配線15。藉此,可抑制電性配線15吸收電磁射束的能量、以及抑制由於電磁射束的照射而使電性配線15的溫度上昇。結果能夠減小電性配線15的存在而帶給密封構件16之溫度上昇的影響。因此,即使於平面觀看在電性配線15上設置有密封構件16,亦能夠同樣地加熱在交叉區域的密封構件16與在非交叉區域的密封構件16,即能夠抑制加熱溫度的不均勻。藉此,可均勻地加熱溶融密封材料,結果,可使密封構件16自身的性質形狀、密封基板17或者支撐基板12,與密封構件16的密著性等均勻化,而使密封的可靠性提高。According to the above description, in the cross-sectional region where the electrical wiring 15 and the sealing member 16 intersect in the plan view, the electrical wiring 15 is formed by the translucent electrical wiring, so that the electromagnetic radiation is applied to the sealing member 16. The bundle will penetrate the electrical wiring 15. Thereby, it is possible to suppress the energy of the electromagnetic wiring 15 from being absorbed by the electrical wiring 15 and to suppress the temperature of the electrical wiring 15 from rising due to the irradiation of the electromagnetic beam. As a result, the influence of the temperature rise of the sealing member 16 can be reduced by reducing the presence of the electric wiring 15. Therefore, even if the sealing member 16 is provided on the electric wiring 15 in plan view, the sealing member 16 in the intersecting region and the sealing member 16 in the non-intersecting region can be similarly heated, that is, the unevenness of the heating temperature can be suppressed. Thereby, the molten sealing material can be uniformly heated, and as a result, the property of the sealing member 16 itself, the sealing property of the sealing substrate 17 or the support substrate 12, and the sealing member 16 can be made uniform, and the reliability of the sealing can be improved. .
此外,電性配線15的外形因可與習知的電性裝置作成相同,故對在藉由蒸鍍法形成電性配線15時所使用之遮罩(mask)的設計,即可活用習知之技術之遮罩的設計。Further, since the outer shape of the electrical wiring 15 can be made the same as that of a conventional electrical device, the design of a mask used when the electrical wiring 15 is formed by a vapor deposition method can be used. The design of the technical mask.
在前述的實施形態中,係針對電性電路14設置於支撐基板12之形態的顯示裝置進行說明。然而,在密封基板17側設置電性電路14亦可。例如,將像素電路設置於支撐基板12、將有機電場發光元件設置於密封基板17亦可。另外,設置於支撐基板12的像素電路、與設置於密封基板17的有機電場發光元件,只要藉由預定的導電性構件進行電性連接即可。In the above-described embodiment, a display device in which the electrical circuit 14 is provided on the support substrate 12 will be described. However, it is also possible to provide the electrical circuit 14 on the side of the sealing substrate 17. For example, the pixel circuit may be provided on the support substrate 12 and the organic electroluminescent device may be provided on the sealing substrate 17. Further, the pixel circuit provided on the support substrate 12 and the organic electroluminescent device provided on the sealing substrate 17 may be electrically connected by a predetermined conductive member.
此外,在前述的實施形態中,雖針對主動矩陣驅動型之顯示裝置進行說明,惟本發明亦可適用於被動矩陣驅動型之顯示裝置。Further, in the above-described embodiment, the active matrix drive type display device will be described, but the present invention is also applicable to a passive matrix drive type display device.
此外在前述的實施形態中,雖以設置有作為具有有機層的電子元件之有機電場發光元件的顯示裝置為例進行說明,惟就具有有機層的電子元件之例而言亦列舉有機電晶體。因此,本發明,係亦可適用於對構成像素電路之一部分的電晶體採用有機電晶體的顯示裝置。Further, in the above-described embodiment, a display device provided with an organic electroluminescent device as an electronic component having an organic layer will be described as an example. However, an organic transistor having an organic layer is also exemplified. Therefore, the present invention is also applicable to a display device using an organic transistor for a transistor constituting a part of a pixel circuit.
11...顯示裝置11. . . Display device
12...支撐基板12. . . Support substrate
13...密封區域13. . . Sealed area
14...電性電路14. . . Electrical circuit
15...電性配線15. . . Electrical wiring
16...密封構件16. . . Sealing member
17...密封基板17. . . Sealing substrate
18...圖像顯示區域18. . . Image display area
19...電性信號輸入輸出源19. . . Electrical signal input and output source
51...支撐基板51. . . Support substrate
52...密封構件52. . . Sealing member
53...密封基板53. . . Sealing substrate
54...電子元件54. . . Electronic component
55...電性配線55. . . Electrical wiring
第1圖係示意性地顯示顯示裝置之平面圖。Fig. 1 is a plan view schematically showing a display device.
第2圖係為在第1圖之剖面線II-II之位置所剖面之顯示裝置的示意性剖面圖。Fig. 2 is a schematic cross-sectional view showing a display device having a cross section taken along the line II-II of Fig. 1.
第3圖係示意性顯示放大密封構件與電性配線所交差之區域之圖。Fig. 3 is a view schematically showing an area where the enlarged sealing member and the electric wiring intersect.
第4圖係為在第3圖所示之剖面線IV-IV之位置所剖面之顯示裝置的示意性剖面圖。Fig. 4 is a schematic cross-sectional view showing a display device having a cross section taken along the line IV-IV shown in Fig. 3.
第5圖係說明密封步驟的示意圖。Figure 5 is a schematic view showing the sealing step.
11...顯示裝置11. . . Display device
12...支撐基板12. . . Support substrate
13...密封區域13. . . Sealed area
14...電性電路14. . . Electrical circuit
15...電性配線15. . . Electrical wiring
16...密封構件16. . . Sealing member
17...密封基板17. . . Sealing substrate
18...圖像顯示區域18. . . Image display area
19...電性信號輸入輸出源19. . . Electrical signal input and output source
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| KR20070039433A (en) * | 2005-10-08 | 2007-04-12 | 삼성전자주식회사 | Display device |
| KR100671638B1 (en) * | 2006-01-26 | 2007-01-19 | 삼성에스디아이 주식회사 | Organic electroluminescent display |
| JP5369384B2 (en) | 2007-03-29 | 2013-12-18 | 住友化学株式会社 | Organic photoelectric conversion device and polymer useful for production thereof |
| JP2008262749A (en) * | 2007-04-10 | 2008-10-30 | Tdk Corp | El panel |
-
2010
- 2010-12-03 JP JP2010270207A patent/JP5644439B2/en not_active Expired - Fee Related
-
2011
- 2011-11-25 KR KR1020137013885A patent/KR101852648B1/en not_active Expired - Fee Related
- 2011-11-25 CN CN201180056251.6A patent/CN103222338B/en not_active Expired - Fee Related
- 2011-11-25 WO PCT/JP2011/077203 patent/WO2012073828A1/en not_active Ceased
- 2011-12-01 TW TW100144132A patent/TWI542061B/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| CN103222338A (en) | 2013-07-24 |
| TW201232866A (en) | 2012-08-01 |
| WO2012073828A1 (en) | 2012-06-07 |
| CN103222338B (en) | 2016-01-20 |
| KR20130143595A (en) | 2013-12-31 |
| JP2012119255A (en) | 2012-06-21 |
| KR101852648B1 (en) | 2018-04-26 |
| JP5644439B2 (en) | 2014-12-24 |
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| Date | Code | Title | Description |
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| MM4A | Annulment or lapse of patent due to non-payment of fees |