TWI540741B - Solar cellmanufacturing method - Google Patents
Solar cellmanufacturing method Download PDFInfo
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- TWI540741B TWI540741B TW103128112A TW103128112A TWI540741B TW I540741 B TWI540741 B TW I540741B TW 103128112 A TW103128112 A TW 103128112A TW 103128112 A TW103128112 A TW 103128112A TW I540741 B TWI540741 B TW I540741B
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- 238000000034 method Methods 0.000 title claims description 27
- 239000000758 substrate Substances 0.000 claims description 82
- 239000004065 semiconductor Substances 0.000 claims description 61
- 238000004519 manufacturing process Methods 0.000 claims description 44
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 40
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 32
- 229910052709 silver Inorganic materials 0.000 claims description 32
- 239000004332 silver Substances 0.000 claims description 32
- 229910052732 germanium Inorganic materials 0.000 claims description 21
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 21
- 239000002002 slurry Substances 0.000 claims description 16
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 12
- 239000013078 crystal Substances 0.000 claims description 7
- 229910052735 hafnium Inorganic materials 0.000 claims description 7
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 7
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 7
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 7
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 7
- 230000003667 anti-reflective effect Effects 0.000 claims description 5
- 238000005245 sintering Methods 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000009413 insulation Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Photovoltaic Devices (AREA)
Description
本發明是有關於一種太陽能電池製造方法,特別是有關於一種將銅合金漿作為電極層之材質之太陽能電池製造方法。The present invention relates to a solar cell manufacturing method, and more particularly to a solar cell manufacturing method using a copper alloy slurry as a material of an electrode layer.
近來,世界各國逐漸重視替代能源的發展,其中,利用光電轉換技術將太陽能轉換為電能的太陽能電池係為研發重點之一。Recently, countries around the world have gradually paid attention to the development of alternative energy sources. Among them, solar cell systems that use photoelectric conversion technology to convert solar energy into electrical energy are one of the research and development priorities.
現有的太陽能電池,其電極層之材質大多係為銀,即為藉由銀漿印刷的方式於基板上形成電極層。In the conventional solar cell, the material of the electrode layer is mostly silver, that is, the electrode layer is formed on the substrate by silver paste printing.
惟,習知使用銀漿形成電極層之製造方式,將使得太陽能電池之整體製造成本大幅上升。因此,如何於太陽能電池之結構及其製程中予以改良,而使成本有效降低,實乃業界亟待解決的問題。However, it is conventional to use a silver paste to form an electrode layer, which will greatly increase the overall manufacturing cost of the solar cell. Therefore, how to improve the structure and process of the solar cell and effectively reduce the cost is an urgent problem to be solved in the industry.
有鑒於上述習知技藝之問題,本發明之目的就是在提供一種太陽能電池製造方法,以解決習知所待改善之問題。In view of the above-mentioned problems of the prior art, it is an object of the present invention to provide a solar cell manufacturing method to solve the problems to be improved.
根據本發明之目的,提出一種太陽能電池製造方法,其包含下列步驟:提供基板。形成半導體層於基板上。形成抗反射層於半導體層上。形成電極層於基板相對半導體層之一面。形成鋁金屬層於基板相對半導體層之該面。藉由雷射製程於抗反射層上形成複數個溝槽。藉由印刷製程於複數個溝槽中形成接觸半導體層之銅合金電極層。In accordance with the purpose of the present invention, a method of fabricating a solar cell is provided that includes the steps of providing a substrate. A semiconductor layer is formed on the substrate. An antireflection layer is formed on the semiconductor layer. The electrode layer is formed on one side of the substrate opposite to the semiconductor layer. An aluminum metal layer is formed on the face of the substrate opposite the semiconductor layer. A plurality of trenches are formed on the anti-reflective layer by a laser process. A copper alloy electrode layer contacting the semiconductor layer is formed in the plurality of trenches by a printing process.
較佳地,基板可為單晶矽基板、多晶矽基板或非晶矽基板。Preferably, the substrate may be a single crystal germanium substrate, a polycrystalline germanium substrate or an amorphous germanium substrate.
較佳地,抗反射層之材質可為氮化矽、氮氧化矽或二氧化矽。Preferably, the material of the anti-reflection layer may be tantalum nitride, hafnium oxynitride or hafnium oxide.
較佳地,電極層可藉由印刷銅合金漿或銀漿所形成。Preferably, the electrode layer can be formed by printing a copper alloy slurry or a silver paste.
根據本發明之目的,再提出一種太陽能電池製造方法,其包含下列步驟:提供基板。形成半導體層於基板上。形成抗反射層於半導體層上。形成電極層於基板相對半導體層之一面。形成鋁金屬層於基板相對半導體層之該面。形成銀漿層於部分抗反射層上。藉由印刷製程於銀漿層上形成銅合金電極層。藉由燒結製程使銀漿層穿透抗反射層,並接觸半導體層。In accordance with the purpose of the present invention, a solar cell manufacturing method is further provided which comprises the steps of providing a substrate. A semiconductor layer is formed on the substrate. An antireflection layer is formed on the semiconductor layer. The electrode layer is formed on one side of the substrate opposite to the semiconductor layer. An aluminum metal layer is formed on the face of the substrate opposite the semiconductor layer. A silver paste layer is formed on the partial anti-reflection layer. A copper alloy electrode layer is formed on the silver paste layer by a printing process. The silver paste layer is penetrated through the anti-reflection layer by a sintering process and contacts the semiconductor layer.
根據本發明之目的,又提出一種太陽能電池製造方法,其包含下列步驟:提供基板。形成半導體層於基板上。形成抗反射層於半導體層上。形成銅合金電極層於基板相對半導體層之一面。形成鋁金屬層於基板相對半導體層之該面。形成電極層於抗反射層上。According to an object of the present invention, there is further provided a solar cell manufacturing method comprising the steps of: providing a substrate. A semiconductor layer is formed on the substrate. An antireflection layer is formed on the semiconductor layer. A copper alloy electrode layer is formed on one side of the substrate opposite to the semiconductor layer. An aluminum metal layer is formed on the face of the substrate opposite the semiconductor layer. An electrode layer is formed on the antireflection layer.
較佳地,電極層可藉由印刷銅合金漿、銀漿或其組合所形成。Preferably, the electrode layer can be formed by printing a copper alloy slurry, a silver paste, or a combination thereof.
承上所述,本發明之太陽能電池之製造方法可藉由銅合金漿印刷以取代習知的銀漿印刷而形成電極層,以達到大幅降低整體製造成本之目的,並且其所製成之太陽能電池之導電電阻可較習知太陽能電池低,轉換效率與習知太陽能電池相差無幾;此外,本發明係摒棄電鍍方式,而是以印刷方式使銅合金漿於基板上形成電極層,以避免環境污染的問題產生。As described above, the method for manufacturing a solar cell of the present invention can form an electrode layer by printing a copper alloy paste instead of the conventional silver paste printing, thereby achieving the purpose of greatly reducing the overall manufacturing cost, and the solar energy produced thereby. The conductive resistance of the battery can be lower than that of the conventional solar battery, and the conversion efficiency is similar to that of the conventional solar battery. In addition, the present invention discards the electroplating method, and the copper alloy slurry is formed on the substrate by the printing method to avoid the environment. The problem of pollution arises.
11‧‧‧基板
12‧‧‧半導體層
13‧‧‧抗反射層
131‧‧‧溝槽
14‧‧‧電極層
15‧‧‧鋁金屬層
16‧‧‧銅合金電極層
17‧‧‧銀漿層
S11至S17、S31至S38、S51至S56‧‧‧步驟11‧‧‧Substrate
12‧‧‧Semiconductor layer
13‧‧‧Anti-reflective layer
131‧‧‧ trench
14‧‧‧Electrode layer
15‧‧‧Aluminum metal layer
16‧‧‧ copper alloy electrode layer
17‧‧‧ Silver layer
Steps S11 to S17, S31 to S38, S51 to S56‧‧
第1圖係為本發明之太陽能電池製造方法之第一流程圖。
第2A至2D圖係為本發明之太陽能電池製造方法之第一實施例之製造流程示意圖。
第3圖係為本發明之太陽能電池製造方法之第二流程圖。
第4A及4B圖係為本發明之太陽能電池製造方法之第二實施例之製造流程示意圖。
第5圖係為本發明之太陽能電池製造方法之第三流程圖。
第6圖係為本發明之太陽能電池製造方法之太陽能電池結構示意圖。Fig. 1 is a first flow chart of a method of manufacturing a solar cell of the present invention.
2A to 2D are schematic views showing the manufacturing process of the first embodiment of the solar cell manufacturing method of the present invention.
Fig. 3 is a second flow chart of the solar cell manufacturing method of the present invention.
4A and 4B are schematic views showing the manufacturing process of the second embodiment of the solar cell manufacturing method of the present invention.
Fig. 5 is a third flow chart of the solar cell manufacturing method of the present invention.
Fig. 6 is a schematic view showing the structure of a solar cell of the solar cell manufacturing method of the present invention.
為利 貴審查員瞭解本發明之技術特徵、內容與優點及其所能達成之功效,茲將本發明配合圖式,並以實施例之表達形式詳細說明如下,而其中所使用之圖式,其主旨僅為示意及輔助說明書之用,未必為本發明實施後之真實比例與精準配置,故不應就所附之圖式的比例與配置關係解讀、侷限本發明於實際實施上的權利範圍,合先敘明。The technical features, contents, and advantages of the present invention and the efficacies thereof can be understood by the present inventors. The present invention will be described in conjunction with the drawings and will be described in detail with reference to the embodiments. The subject matter is only for the purpose of illustration and description. It is not intended to be a true proportion and precise configuration after the implementation of the present invention. Therefore, the scope and configuration relationship of the attached drawings should not be interpreted or limited. First described.
請參閱第1圖,其係為本發明之太陽能電池製造方法之第一流程圖。如圖所示,本發明之太陽能電池製造方法包含下列步驟:Please refer to FIG. 1 , which is a first flow chart of a method for manufacturing a solar cell of the present invention. As shown in the figure, the solar cell manufacturing method of the present invention comprises the following steps:
在步驟S11中:提供基板。該基板可為單晶矽基板、多晶矽基板或非晶矽基板。In step S11: a substrate is provided. The substrate may be a single crystal germanium substrate, a polycrystalline germanium substrate or an amorphous germanium substrate.
在步驟S12中:形成半導體層於基板上。In step S12, a semiconductor layer is formed on the substrate.
在步驟S13中:形成抗反射層於半導體層上。該抗反射層之材質可為氮化矽、氮氧化矽或二氧化矽。In step S13: an anti-reflection layer is formed on the semiconductor layer. The material of the anti-reflection layer may be tantalum nitride, hafnium oxynitride or hafnium oxide.
在步驟S14中:形成電極層於基板相對半導體層之一面。電極層可藉由印刷銅合金漿或銀漿所形成。In step S14, the electrode layer is formed on one side of the substrate opposite to the semiconductor layer. The electrode layer can be formed by printing a copper alloy slurry or a silver paste.
在步驟S15中:形成鋁金屬層於基板相對半導體層之該面。In step S15, an aluminum metal layer is formed on the face of the substrate opposite to the semiconductor layer.
在步驟S16中:藉由雷射製程於抗反射層上形成複數個溝槽。In step S16, a plurality of trenches are formed on the anti-reflection layer by a laser process.
在步驟S17中:藉由印刷製程於複數個溝槽中形成接觸半導體層之銅合金電極層。In step S17, a copper alloy electrode layer contacting the semiconductor layer is formed in the plurality of trenches by a printing process.
請輔以參閱第2A至2D圖,其係為本發明之太陽能電池製造方法之第一實施例之製造流程示意圖。如第2A圖所示,首先,於基板11上形成半導體層12,及於半導體層12上形成抗反射層13;其中,半導體層12係藉由擴散製程形成於基板11上,並且其與基板11之間形成P-N接面,換言之,當基板11為P型半導體基板時,半導體層12便為N型半導體層;反之,若基板11為N型半導體基板時,半導體層12則為P型半導體層。Please refer to FIGS. 2A to 2D, which are schematic diagrams showing the manufacturing process of the first embodiment of the solar cell manufacturing method of the present invention. As shown in FIG. 2A, first, a semiconductor layer 12 is formed on the substrate 11, and an anti-reflection layer 13 is formed on the semiconductor layer 12; wherein the semiconductor layer 12 is formed on the substrate 11 by a diffusion process, and the substrate is bonded to the substrate A PN junction is formed between 11 and, in other words, when the substrate 11 is a P-type semiconductor substrate, the semiconductor layer 12 is an N-type semiconductor layer; conversely, if the substrate 11 is an N-type semiconductor substrate, the semiconductor layer 12 is a P-type semiconductor. Floor.
而基板11之另一面將形成電極層14,即位於相對半導體層12之一面;且,另形成鋁金屬層15於基板11相對半導體層12之該面(如第2B圖)。On the other side of the substrate 11, an electrode layer 14 is formed, that is, on one side of the opposite semiconductor layer 12; and an aluminum metal layer 15 is additionally formed on the surface of the substrate 11 opposite to the semiconductor layer 12 (as shown in FIG. 2B).
接著,藉由雷射製程於抗反射層13形成複數個溝槽131(如第2C圖);並且藉由精準對位之後之印刷製程,將銅合金漿印刷於複數個溝槽131之中,進而形成與半導體層12接觸之銅合金電極層16(如第2D圖);換言之,為使銅合金電極層16可與半導體層12歐姆接觸(Ohm contact),則必須經由雷射形成溝槽131,而銅合金電極層16便可穿過抗反射層13與半導體層12接觸。Then, a plurality of trenches 131 are formed on the anti-reflective layer 13 by a laser process (as shown in FIG. 2C); and the copper alloy paste is printed in the plurality of trenches 131 by a printing process after precise alignment. Further, a copper alloy electrode layer 16 is formed in contact with the semiconductor layer 12 (as shown in FIG. 2D); in other words, in order to make the copper alloy electrode layer 16 in ohmic contact with the semiconductor layer 12, the trench 131 must be formed via the laser. The copper alloy electrode layer 16 can be in contact with the semiconductor layer 12 through the anti-reflection layer 13.
請參閱第3圖,其係為本發明之太陽能電池製造方法之第二流程圖。如圖所示,於本發明之第二實施例之中,該太陽能電池製造方法包含下列步驟:Please refer to FIG. 3, which is a second flow chart of the solar cell manufacturing method of the present invention. As shown in the figure, in the second embodiment of the present invention, the solar cell manufacturing method comprises the following steps:
在步驟S31中:提供基板。該基板可為單晶矽基板、多晶矽基板或非晶矽基板。In step S31: a substrate is provided. The substrate may be a single crystal germanium substrate, a polycrystalline germanium substrate or an amorphous germanium substrate.
在步驟S32中:形成半導體層於基板上。In step S32, a semiconductor layer is formed on the substrate.
在步驟S33中:形成抗反射層於半導體層上。該抗反射層之材質可為氮化矽、氮氧化矽或二氧化矽。In step S33, an antireflection layer is formed on the semiconductor layer. The material of the anti-reflection layer may be tantalum nitride, hafnium oxynitride or hafnium oxide.
在步驟S34中:形成電極層於基板相對半導體層之一面。該電極層可藉由印刷銅合金漿或銀漿所形成。In step S34, an electrode layer is formed on one side of the substrate opposite to the semiconductor layer. The electrode layer can be formed by printing a copper alloy slurry or a silver paste.
在步驟S35中:形成鋁金屬層於基板相對半導體層之該面。In step S35, an aluminum metal layer is formed on the face of the substrate opposite to the semiconductor layer.
在步驟S36中:形成銀漿層於部分抗反射層上。In step S36, a silver paste layer is formed on the partial anti-reflection layer.
在步驟S37中:藉由印刷製程於銀漿層上形成銅合金電極層。In step S37, a copper alloy electrode layer is formed on the silver paste layer by a printing process.
在步驟S38中:藉由燒結製程使銀漿層穿透抗反射層,並接觸半導體層。In step S38, the silver paste layer is penetrated through the anti-reflection layer by a sintering process and contacts the semiconductor layer.
由上述流程可知,第二實施例中所提出之太陽能電池製造方式,一開始如同第一實施例先於基板11上形成半導體層12及抗反射層13,並於基板11另一面形成電極層14及鋁金屬層15。It can be seen from the above process that the solar cell manufacturing method proposed in the second embodiment initially forms the semiconductor layer 12 and the anti-reflection layer 13 on the substrate 11 as in the first embodiment, and forms the electrode layer 14 on the other surface of the substrate 11. And an aluminum metal layer 15.
再請參閱第4A及4B圖,係為本發明之太陽能電池製造方法之第二實施例之製造流程示意圖。如第4A圖所示,本發明於製造過程中係於部分抗反射層13上形成銀漿層17,再於銀漿層17上形成銅合金電極層16。4A and 4B are schematic views showing the manufacturing process of the second embodiment of the solar cell manufacturing method of the present invention. As shown in FIG. 4A, in the manufacturing process, the silver paste layer 17 is formed on the partial anti-reflection layer 13 and the copper alloy electrode layer 16 is formed on the silver paste layer 17.
如第4B圖所示,更進一步地,經由燒結製程,而使得銀漿層17(銀漿中含有玻璃粉)於燒結過程中穿透(燒穿)抗反射層13,而與半導體層12相接觸,進而使得銅合金電極層16藉由銀漿層17與半導體層12產生歐姆接觸(Ohm contact)。As shown in FIG. 4B, further, through the sintering process, the silver paste layer 17 (containing the glass powder in the silver paste) penetrates (burns through) the anti-reflection layer 13 during the sintering process, and is in phase with the semiconductor layer 12. Contacting, in turn, causes the copper alloy electrode layer 16 to make an ohmic contact with the semiconductor layer 12 by the silver paste layer 17.
請參閱第5圖,其係為本發明之太陽能電池製造方法之第三流程圖,如圖所示,於第三實施例中,本發明之太陽能電池製造方法包含下列步驟:Please refer to FIG. 5, which is a third flowchart of the solar cell manufacturing method of the present invention. As shown in the figure, in the third embodiment, the solar cell manufacturing method of the present invention comprises the following steps:
在步驟S51中:提供基板。該基板可為單晶矽基板、多晶矽基板或非晶矽基板。In step S51, a substrate is provided. The substrate may be a single crystal germanium substrate, a polycrystalline germanium substrate or an amorphous germanium substrate.
在步驟S52中:形成半導體層於基板上。In step S52, a semiconductor layer is formed on the substrate.
在步驟S53中:形成抗反射層於半導體層上。該抗反射層之材質可為氮化矽、氮氧化矽或二氧化矽。In step S53, an anti-reflection layer is formed on the semiconductor layer. The material of the anti-reflection layer may be tantalum nitride, hafnium oxynitride or hafnium oxide.
在步驟S54中:形成銅合金電極層於基板相對半導體層之一面。In step S54, a copper alloy electrode layer is formed on one side of the substrate opposite to the semiconductor layer.
在步驟S55中:形成鋁金屬層於基板相對半導體層之該面。In step S55, an aluminum metal layer is formed on the surface of the substrate opposite to the semiconductor layer.
在步驟S56中:形成電極層於抗反射層上。該電極層可藉由印刷銅合金漿、銀漿或其組合所形成。其中,若該電極層係由銅合金漿印刷而成,詳細形成流程請參照前述第一實施例或第二實施例,在此便不予以贅述。In step S56, an electrode layer is formed on the anti-reflection layer. The electrode layer can be formed by printing a copper alloy slurry, a silver paste, or a combination thereof. If the electrode layer is printed by a copper alloy slurry, please refer to the first embodiment or the second embodiment for the detailed formation process, and no further details will be described herein.
續言之,於第三實施例中,該太陽能電池之結構部分相似於第一實施例及第二實施例之太陽能電池,惟,如第6圖所示,其係藉由將銅合金漿印刷於基板11相對於半導體層12之一面上,以於基板11之另一面形成銅合金電極層16,而與前述之太陽能電池有所差異。Continuingly, in the third embodiment, the solar cell has a structural portion similar to that of the first embodiment and the second embodiment, but as shown in FIG. 6, it is printed by using a copper alloy paste. On the one surface of the substrate 11 with respect to the semiconductor layer 12, a copper alloy electrode layer 16 is formed on the other surface of the substrate 11, which is different from the solar cell described above.
接著,請參閱表1,其係為兩種不同比例之銅合金漿與習知銀漿所製成之太陽能電池之相關參數比較。Next, please refer to Table 1, which is a comparison of the relevant parameters of two different proportions of copper alloy slurry and solar cells made by conventional silver paste.
表一Table I
串聯電阻 轉換效率 元件絕緣能力 銅合金1 2.65 17.53% 219 銅合金2 2.74 17.32% 185 銀 2.74 17.72% 185 其中,需說明的是表一中之串聯電阻值是低為佳,轉換效率值則是高為佳,而元件絕緣能力值同樣高為佳;而如表一所示不同比例之銅合金1及銅合金2二組經測試之後,其相關參數除了轉換效率略低於習知使用銀的該組,其他參數皆不遜於習知太陽能電池。Series resistance conversion efficiency component insulation capacity copper alloy 1 2.65 17.53% 219 copper alloy 2 2.74 17.32% 185 silver 2.74 17.72% 185 Among them, it should be noted that the series resistance value in Table 1 is low, the conversion efficiency value is high. Preferably, the component insulation capability value is also high; and the copper alloy 1 and copper alloy 2 groups of different ratios as shown in Table 1 have been tested, and the relevant parameters are slightly lower than the conventional conversion efficiency. Group, other parameters are no worse than conventional solar cells.
進而可知,本發明之太陽能電池之製造方法除了藉由銅合金漿印刷以取代習知的銀漿印刷而形成電極層,以達到大幅降低整體製造成本之目的之外。Further, it is understood that the method for producing a solar cell of the present invention is formed by replacing the conventional silver paste printing with a copper alloy paste to form an electrode layer, thereby achieving a purpose of greatly reducing the overall manufacturing cost.
其以銅合金漿取代銀漿其所製成之太陽能電池之導電電阻可較習知太陽能電池低,元件絕緣能力也較習知太陽能電池高,轉換效率則與習知太陽能電池相差無幾;亦即,以銅合金漿取代銀漿其所製成之太陽能電池之性能不遜於習知太陽能電池,並且具有成本低之優點。The solar cell made of the copper alloy slurry instead of the silver paste can have lower conductivity than the conventional solar cell, and the component insulating ability is higher than that of the conventional solar cell, and the conversion efficiency is almost the same as that of the conventional solar cell; The performance of the solar cell made by replacing the silver paste with a copper alloy slurry is not inferior to that of the conventional solar cell, and has the advantage of low cost.
此外,值得一提的是,本發明於運用銅合金漿方面係摒棄電鍍方式,而是以印刷方式使銅合金漿於基板上形成電極層,以避免環境污染的問題產生。In addition, it is worth mentioning that the present invention uses a copper alloy slurry to discard the plating method, but uses a copper alloy slurry to form an electrode layer on the substrate by printing to avoid the problem of environmental pollution.
綜觀上述,本發明之太陽能電池製造方法乃為習知技術所不能及者,確實已達到所欲增進之功效,且也非熟悉該項技藝者所易於思及,其所具之進步性、實用性,顯然已符合專利之申請要件,爰依法提出專利申請,懇請 貴局核准本件發明專利申請案,以勵創作,至感德便。In view of the above, the solar cell manufacturing method of the present invention is unattainable by the prior art, and has indeed achieved the desired effect, and is not familiar with the skill of the artist, and is highly progressive and practical. Sexuality, obviously has met the requirements of the patent application, 提出 filed a patent application according to law, and asks your office to approve the invention patent application, in order to encourage creation, to the sense of virtue.
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S11至S17‧‧‧步驟 Steps S11 to S17‧‧
Claims (12)
提供一基板;
形成一半導體層於該基板上;
形成一抗反射層於該半導體層上;
形成一電極層於該基板相對該半導體層之一面;
形成一鋁金屬層於該基板相對該半導體層之該面;
藉由雷射製程於該抗反射層上形成複數個溝槽;以及
藉由印刷製程於該複數個溝槽中形成接觸該半導體層之一銅合金電極層。A solar cell manufacturing method comprising the following steps:
Providing a substrate;
Forming a semiconductor layer on the substrate;
Forming an anti-reflection layer on the semiconductor layer;
Forming an electrode layer on a side of the substrate opposite to the semiconductor layer;
Forming an aluminum metal layer on the side of the substrate opposite to the semiconductor layer;
Forming a plurality of trenches on the anti-reflective layer by a laser process; and forming a copper alloy electrode layer contacting the semiconductor layer in the plurality of trenches by a printing process.
提供一基板;
形成一半導體層於該基板上;
形成一抗反射層於該半導體層上;
形成一電極層於該基板相對該半導體層之一面;
形成一鋁金屬層於該基板相對該半導體層之該面;
形成一銀漿層於部分該抗反射層上;
藉由印刷製程於該銀漿層上形成一銅合金電極層;以及
藉由燒結製程使該銀漿層穿透該抗反射層,並接觸該半導體層。A solar cell manufacturing method comprising the following steps:
Providing a substrate;
Forming a semiconductor layer on the substrate;
Forming an anti-reflection layer on the semiconductor layer;
Forming an electrode layer on a side of the substrate opposite to the semiconductor layer;
Forming an aluminum metal layer on the side of the substrate opposite to the semiconductor layer;
Forming a silver paste layer on a portion of the anti-reflective layer;
Forming a copper alloy electrode layer on the silver paste layer by a printing process; and passing the silver paste layer through the anti-reflection layer by a sintering process and contacting the semiconductor layer.
提供一基板;
形成一半導體層於該基板上;
形成一抗反射層於該半導體層上;
形成一銅合金電極層於該基板相對該半導體層之一面;
形成一鋁金屬層於該基板相對該半導體層之該面;以及
形成一電極層於該抗反射層上。A solar cell manufacturing method comprising the following steps:
Providing a substrate;
Forming a semiconductor layer on the substrate;
Forming an anti-reflection layer on the semiconductor layer;
Forming a copper alloy electrode layer on a side of the substrate opposite to the semiconductor layer;
Forming an aluminum metal layer on the surface of the substrate opposite to the semiconductor layer; and forming an electrode layer on the anti-reflection layer.
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