TWI437371B - Illumination optical device, production method of an illumination optical device, adjusting method of an illumination optical device, exposure device and exposure method - Google Patents

Description

Illumination optical device, manufacturing method of illumination optical device, adjustment method of illumination optical device, exposure device, and exposure method

The invention relates to an illumination optical device, a manufacturing method thereof, an exposure device and an exposure method. More particularly, the present invention relates to an exposure apparatus for manufacturing a semiconductor element, a photographic element, a liquid crystal display element, a thin film magnetic head, and the like by a lithography process.

In the above-described typical exposure apparatus, the light beam emitted from the light source forms a secondary light source via a Fries eyepiece as an optical integrator, and serves as a substantial surface light source composed of a plurality of light sources. The light beam from the secondary light source (usually the illumination pupil of the illumination optics or the illumination pupil formed by the vicinity thereof) is restricted by the aperture aperture disposed near the rear focal plane of the Flis eyepiece, and then incident on the beam. Optical lens.

The light beams condensed by the condensing lens are superimposed on the reticle formed by the predetermined patterns. The light passing through the pattern of the reticle is imaged on the wafer via the projection optical system. Therefore, the reticle pattern is projected (transferred) onto the wafer. Further, the pattern formed on the photomask is a highly integrated person, and when the fine pattern is correctly transferred onto the wafer, a uniform illuminance distribution can be obtained on the wafer without being nicked.

For example, a setting technique is disclosed in the patent No. 3246615 to which the present applicant belongs, in which the rear focus surface of the Flis eyepiece is used in order to realize appropriate lighting conditions required for faithful transfer of the fine pattern in an arbitrary direction. A ring-shaped secondary light source is formed, and the light beam passing through the annular secondary light source becomes a linearly polarized light having a circumferential direction as a polarization direction State (hereinafter referred to as the polarization state in the surrounding direction).

Patent Document 1 Patent No. 3246615

It is not limited to the above-described peripheral direction polarization state, and when the specific linearly polarized light is used for projection exposure of a specific pattern, the resolution of the projection optical system can be effectively increased upward. Further, in general, when the projection exposure is performed in accordance with the reticle pattern using light of a specific polarization state (hereinafter, a broad concept including a non-polarization state), the resolution of the projection optical system can be effectively increased upward.

However, even if the photomask (or even the wafer) is illuminated with light in a desired polarization state, if there is an optical element that changes the polarization state of the light in the illumination optical path, the desired polarization state cannot be obtained. Imaging, which in turn may deteriorate imaging performance. In particular, in a light-transmitting member such as a lens or a parallel flat plate disposed in the illumination light path, the polarization state of the passing light changes due to the birefringence caused by the internal deflection.

The present invention has been made in view of the above problems, and an illumination optical device capable of satisfactorily suppressing a change in a polarization state of light in an illumination light path and irradiating an illuminated surface with light in a desired polarization state. Further, another object of the present invention is to provide an exposure apparatus and an exposure method which use a desired polarized light to illuminate an illuminated surface to faithfully make a fine pattern in a desired polarization state. Imaging on a photosensitive substrate and performing a good exposure.

In order to solve the above problem, a photo is provided in the first form of the present invention. A bright optical device that illuminates an illuminated surface according to light provided by a light source and includes: a polarizing setting unit disposed in an optical path between the light source and the illuminated surface to achieve a polarized state of light reaching the illuminated surface A predetermined polarization state is set, wherein each of the plurality of light transmitting members disposed in the optical path between the polarized light setting portion and the illuminated surface is an optical material, and the optical material is caused by internal deflection The amount of birefringence is 5 nm/cm or less.

According to a second aspect of the present invention, there is provided an illumination optical device that illuminates an illuminated surface in accordance with light supplied from a light source, and includes: a polarization setting unit disposed in an optical path between the light source and the illuminated surface; The polarization state of the light reaching the illuminated surface is set to a predetermined polarization state.

The plurality of light-transmitting members disposed in the optical path between the polarized light setting portion and the illuminated surface are respectively positioned at a desired rotational angular position centering on the optical axis, so that the light-transmitting members are internally biased. The effect of the birefringence caused by the skew is reduced by cancellation.

According to a third aspect of the present invention, there is provided an illumination optical device that illuminates an illuminated surface in accordance with light supplied from a light source and includes: a polarization setting unit disposed in an optical path between the light source and the illuminated surface; a polarization state of the light reaching the illuminated surface is set to a predetermined polarization state, and a curved mirror disposed in the optical path between the polarization setting portion and the illuminated surface to bend the optical path, wherein the curved mirror is A light is formed in the reflective film between the light incident on the reflective film with P-polarized light and the light incident on the reflective film with S-polarized light The phase difference caused by the reflection is within 15 degrees of the light incident on the reflective film.

According to a fourth aspect of the present invention, there is provided an illumination optical device that illuminates an illuminated surface in accordance with light supplied from a light source and is characterized by: a polarization setting unit disposed between the light source and the illuminated surface The polarization state of the light on the illuminated surface is set to a predetermined polarization state, and an optical system is disposed in the optical path between the polarization setting portion and the illuminated surface to manage the amount of birefringence.

According to a fifth aspect of the present invention, there is provided an illumination optical device that illuminates an illuminated surface in accordance with light supplied from a light source and is characterized by: a polarization setting unit disposed between the light source and the illuminated surface The polarizing state of the light on the illuminated surface is set to a predetermined polarized state, and an optical system is disposed in the optical path between the polarized light setting portion and the illuminated surface and holds the light reaching the illuminated surface In the polarized state, the polarized state of the light on the illuminated surface is a predetermined polarized state.

According to a sixth aspect of the present invention, there is provided a method of manufacturing an illumination optical device including a plurality of light-transmitting members, comprising the following processes: a bulk material preparation process for preparing a bulk material to form a plurality of optical members. For each of the measurement processes, the amount of birefringence of each of the prepared blocks is measured, and the calculation process collects the respective measurement processes associated with the plurality of light-transmitting members constituting at least a portion of the illumination optical device. Bulk determination Information, selecting an appropriate combination of a plurality of light-transmitting members constituting at least a part of the illumination optical device, which can influence the influence of birefringence, to obtain respective light-transmitting members caused by appropriate combination of the plurality of light-transmitting members Setting a position, a processing process, processing the plurality of blocks to form each of the light-transmitting members, and assembling the process, and assembling the plurality of light-transmitting members processed in the process to the determined respective pieces according to the result of the calculation process In the set position.

According to a seventh aspect of the present invention, there is provided an exposure apparatus comprising: an illumination optical device of a first form to a fifth form; or an illumination optical device manufactured by the manufacturing method of the sixth form, wherein the exposure device is characterized by: The pattern of the reticle illuminated by the illumination optics is exposed on the photosensitive substrate.

According to an eighth aspect of the present invention, there is provided an exposure method using the illumination optical device of the first to fifth aspects or the illumination optical device manufactured by the manufacturing method of the sixth form, wherein the exposure method is characterized in that the photomask is provided The pattern is exposed on a photosensitive substrate.

According to a ninth aspect of the present invention, there is provided a method of manufacturing a micro-component, comprising: an exposure process, using the illumination optical device of the first to fifth forms or the illumination manufactured by the manufacturing method of the sixth form; An optical device for exposing the pattern of the photomask to the photosensitive substrate; and a developing process for developing the photosensitive substrate exposed by the exposure process.

In the seventh aspect, the polarization setting unit of the illumination optical system sets the polarization state of the light on the illuminated surface to a predetermined polarization state, and the illumination light The adjustment method of the learning system is characterized by the following processes: an acquisition process of obtaining information relating to at least a part of an optical system to be disposed in the optical path between the polarization setting unit and the illuminated surface, a management process, The birefringence amount of the optical system disposed in the optical path between the polarization setting unit and the illuminated surface is managed.

In the eighth aspect, the polarization setting unit of the illumination optical system sets the polarization state of the light on the illumination surface to a predetermined polarization state, and the adjustment method of the illumination optical system includes the following processes: acquisition process, which is obtained. Information relating to at least a portion of the optical system to be disposed in the optical path between the polarized light setting portion and the illuminated surface, maintaining a process in which the optical path between the polarized light setting portion and the illuminated surface is maintained The polarization characteristic is such that the polarization state of the light reaching the illuminated surface is in a predetermined polarization state via the optical system.

In the illumination optical device according to a typical aspect of the present invention, the polarization setting unit for setting the polarization state of the light reaching the illuminated surface to a predetermined polarization state is disposed in the optical path between the light source and the illuminated surface. Then, each of the light transmitting members (lenses, parallel plane plates, and the like) disposed in the optical path between the polarized light setting portion and the illuminated surface is an optical material, and the amount of birefringence caused by the optical material for internal deflection is 5 nm/ Below cm. As a result, the birefringence caused by the internal deflection in each of the light-transmitting members is suppressed, and the polarized state caused by the birefringence of the passing light is not adversely affected.

Therefore, in the illumination optical device of the present invention, the light in the illumination path is illuminated The change in the polarization state can be satisfactorily suppressed, and the illuminated surface can be illuminated with light in a desired polarization state. Therefore, in the exposure apparatus and the exposure method of the present invention, an illumination optical device for illuminating the illuminated surface with light in a desired polarization state can be used to faithfully image the fine pattern in the desired polarization state. A good exposure is made on the substrate to produce a good micro-component.

Embodiments of the present invention will be described below with reference to the accompanying drawings. Fig. 1 is a schematic view showing the configuration of an exposure apparatus according to an embodiment of the present invention. In FIG. 1, the Z axis is set along the normal direction of the wafer W in the photosensitive substrate, and the Y axis is set in the plane parallel to the paper surface of FIG. 1 in the plane of the wafer W, and the wafer W is in the plane. The X axis is set to be perpendicular to the paper surface of Fig. 1.

Referring to Fig. 1, an exposure apparatus of this embodiment includes a light source 1 for supplying the exposure light beam (illumination light). For example, an ArF excimer laser light source for supplying light of 193 nm wavelength or a KrF excimer laser light source for supplying light of 248 nm wavelength can be used as the light source 1. The substantially parallel light beams emitted from the light source 1 are incident on the focusless lens 5 via the relay lens system 2, the polarization state switching sections 3 (3a, 3b), and the diffractive optical elements 4 for ring illumination. Further, the configuration and function of the polarization state switching unit 3 will be described later. The function of the relay lens system 2 is to convert the substantially parallel light beams from the light source 1 into substantially parallel light having a predetermined rectangular cross section and guide the light to the polarization state switching portion 3. The focusless lens 5 is a no The focus optical system sets the front focus position and the position of the diffractive optical element 4 to approximately coincide with each other and the position of the rear side focus position and the position of the fixed surface 6 indicated by the broken line in the figure are also set to approximately coincide.

On the other hand, the diffractive optical element 4 is constituted by the formation of a step and has an effect of diffracting the incident beam to a desired angle which has a pitch of a wavelength of the exposure beam (illumination light) on the substrate. Specifically, when a parallel light beam having a rectangular cross section is incident, the diffractive optical element 4 for ring illumination has a circular light intensity distribution formed in its far field (or Fraunhofer diffraction area). The function.

Therefore, the approximately parallel light beams incident in the diffractive optical element 4 as the beam converting element form an annular light intensity distribution on the pupil surface of the non-focus lens 5, and are distributed in a ring shape by the angleless lens 5 Shoot out. Further, a polarization conversion element 7 and a conical rotation axicon system 8 are disposed in or near the optical path between the front lens group 5a and the rear lens group 5b of the non-focus lens 5. The configuration and function of the polarization conversion element 7 and the conical rotation axicon system 8 will be described later.

The light beam passing through the focusless lens 5 is incident into a micro Fries eyepiece (or Flis eyepiece) 10 as an optical integrator via a zoom lens 9 having a variable σ value. The micro-Fris eyepiece 10 is an optical element composed of a plurality of microlenses having a positive refractive index and a plurality of positive refractive indices. In general, the micro-Frisian eyepiece is constructed, for example, by applying an etching process on a parallel plane plate to form a microlens group.

Here, each of the minute lenses used to constitute the micro-Fris eyepiece is smaller than the lens elements used to constitute the Flis eyepiece. Again, the micro-Fris eyepiece The Flis eyepiece formed by the lens elements isolated from each other is not the same, and a plurality of minute lenses (microscopic refractive surfaces) are not integrally formed and are integrally formed. However, in the case where the lens element having a positive refractive index is disposed in a vertical and horizontal manner, the micro-Fris eyepiece and the Flis eyepiece are both wavefront-separated optical integrators.

The position of the fixed surface 6 is disposed in the vicinity of the front focus position of the zoom lens 9, and the incident surface of the micro-Fris eyepiece 10 is disposed in the vicinity of the rear focus position of the zoom lens 9. In other words, the zoom lens 9 actually configures the incident surface 6 and the incident surface of the micro-Fris eyepiece 10 in a Fourier transform relationship, thereby making the face of the non-focus lens 5 and the micro-Fris eyepiece The entrance faces of 10 are configured to be optically nearly synergistic.

Therefore, the incident surface of the micro-Fris eyepiece 10, like the pupil plane of the non-focus lens 5, forms, for example, an annular irradiation region centered on the optical axis AX. The overall shape of the annular irradiation zone is similarly changed in relation to the focal length of the zoom lens 9, which will be described later. Each of the minute lenses constituting the micro-Fris eyepiece 10 has a rectangular cross section similar to the shape of the irradiation region to be formed on the mask M (and thus the shape of the exposure region to be formed on the wafer W).

The light beam incident on the micro-Frisian eyepiece 10 is divided into a two-dimensional space by a plurality of minute lenses, and a secondary light source is formed at a rear side focal plane or a vicinity thereof (and thus an illumination pupil plane), and the light having the same The intensity distribution is approximately the same as the illumination area formed by the incident beam, i.e., a secondary source of light formed by an annular substantially planar source centered on the optical axis AX. From the rear side focal plane of the micro-Fris eyepiece 10 or a secondary light source formed at or near its vicinity The beam of light illuminates the reticle 12 in an overlapping manner after passing through the concentrator optical system 11.

Therefore, as the reticle shutter 12 for illuminating the field of view aperture, a rectangular irradiation region corresponding to the shape and focal length of each of the minute lenses constituting the micro-Fris eyepiece 10 is formed. The light beam that has passed through the rectangular opening (light transmitting portion) of the reticle 12 is subjected to the condensing action of the imaging optical system 13, and then the reticle M formed by the predetermined pattern is superimposed and illuminated. That is, the imaging optical system 13 forms an image of the rectangular opening of the reticle 12 on the reticle M. Further, a pair of curved mirrors M1 and M2 are disposed in the optical path of the imaging optical system 13.

The light beam transmitted through the pattern of the mask M held on the mask stage MS forms an image of the mask pattern on the wafer (photosensitive substrate) W held on the wafer table WS via the projection optical system PL. Here, in a plane (XY plane) orthogonal to the optical axis AX of the projection optical system PL, the wafer table WS is driven and controlled in a two-dimensional space, and the wafer is driven and controlled in a two-dimensional space. W, in order to perform overall exposure or scanning exposure, sequentially exposing the patterns of the masks M in the respective exposure regions of the wafer W.

The polarization state switching unit 3 is provided with a quarter-wavelength plate 3a and a half-wavelength plate 3b in this order from the light source side. The quarter-wavelength plate 3a is configured to be rotatable about the crystal optical axis around the optical axis AX, and converts the incident elliptically polarized light into linearly polarized light. Further, the half-wavelength plate 3b is configured to be rotatable about the crystal optical axis when the optical axis AX is centered, and to change the polarization plane (polarization direction) of the incident linearly polarized light. Further, the rotation of the 1⁄4 wavelength plate 3a and the 1⁄2 wavelength plate 3b is controlled by the control unit 20 as The drive unit 21 that operates based on the reference is performed.

When a KrF excimer laser light source or an ArF excimer laser light source is used as the light source 1, the light emitted from such a light source typically has a degree of polarization of 95% or more, and is incident on the quarter-wavelength plate 3a. Almost all linearly polarized light. However, when there is a right angle 著作 written as the inner mirror in the optical path between the light source 1 and the polarization switching unit 3, if the polarized surface of the incident linearly polarized light does not coincide with the P polarizing surface or the S polarizing surface facing the reflecting surface, Then, the linearly polarized light is changed into an elliptically polarized light by total reflection on the right angle 稜鏡.

For example, even if the elliptically polarized light is incident on the polarization state switching portion 3 due to the total reflection on the right angle, the linearly polarized light converted by the action of the quarter wave plate 3a can be incident on the light. 2 wave plate 3b. Hereinafter, for the sake of simple explanation, the light of the linearly polarized light (hereinafter referred to as the Y-direction polarized light) having the polarization direction (the direction of the electric field) in the Y direction in FIG. 1 is set to be incident on the 1/2 wavelength plate 3b.

In this case, when the crystal optical axis of the 1/2 wavelength plate 3b is set to an angle of 0 or 90 degrees with respect to the incident polarization surface of the Z-direction polarized light, it is incident on the 1/2 wavelength plate 3b. The polarizing surface of the light polarized in the Z direction does not change, the Z-direction polarized light passes through the original direction, and is incident on the diffractive optical element 4 in the Z-polarized state. On the other hand, when the crystal optical axis of the 1/2 wavelength plate 3b is set to an angle of 45 degrees with respect to the incident polarized surface of the Z-direction polarized light, the Z-direction polarized light incident on the 1/2 wavelength plate 3b is incident. The polarizing surface of the light changes only by 90 degrees to become a linearly polarized light having a polarization direction (a direction of an electric field) in the X direction of FIG. 1 (hereinafter referred to as X-direction polarized light), and is incident on the X-direction polarized state. The optical element 4 is injected.

In general, when the incident optical plane of the Z-direction polarized light is set to a desired angle by the crystal optical axis of the half-wavelength plate 3b, the polarized state of the incident light toward the diffractive optical element 4 can be It is set to a linearly polarized state which can have a polarization direction in any direction. Further, the polarization state switching unit 3 can make the circular polarization state by setting the 1⁄2 wavelength plate 3b to the illumination optical path and setting the crystal optical axis of the 1⁄4 wavelength plate 3a to a desired angle to the incident elliptically polarized light. Light of the desired elliptically polarized state is incident on the diffractive optical element 4. In other words, in the state where the polarization conversion element 7 to be described later is retracted by the optical path, the polarization state of the light for illuminating the mask M or the wafer W can be set to be in any direction by the action of the polarization state switching unit 3. It may have a linearly polarized state of a polarization direction, a circularly polarized state, or a desired elliptically polarized state.

Next, the conical rotation of the axis cone system 8 is sequentially guided by the first side member 8a (the plane thereof toward the light source side and the concave conical refraction faces the mask side) and the second jaw member 8b. (The plane is oriented toward the mask side and the convex conical refraction faces the light source side). Then, the concave conical refractive surface of the first weir member 8a and the convex conical refractive surface of the second weir member 8b are formed in a complementary manner so as to be engageable with each other. Further, at least one of the first weir member 8a and the second weir member 8b is structurally movable along the optical axis AX. The interval between the concave conical refractive surface of the first meandering member 8a and the convex conical refractive surface of the second meandering member 8b can be changed in construction.

Here, when the concave conical refractive surface of the first meandering member 8a and the convex conical refractive surface of the second meandering member 8b are in a state of being joined to each other, the circle The cone rotating triaxial system 8 is functionally used as a parallel planar plate which has no effect on the formed annular secondary source. However, if the concave conical refractive surface of the first meandering member 8a and the convex conical refractive surface of the second meandering member 8b are separated from each other, the width of the annular secondary light source (ring 2) The difference between the outer diameter and the inner diameter of the secondary light source is kept constant, and on the other hand, the outer diameter (inner diameter) of the annular secondary light source changes. That is, the ring ratio (inner diameter/outer diameter) and size (outer diameter) of the annular secondary light source vary.

The zoom lens 9 has a function of expanding or contracting the overall shape of the annular secondary light source in a similar manner. For example, when the focal length of the zoom lens 9 is expanded from a minimum value to a predetermined value, the overall shape of the annular secondary light source is expanded in a similar manner. In other words, by the action of the zoom lens 9, the ring-shaped secondary light source does not change in the ring ratio, and its width and size (outer diameter) change at the same time. Therefore, by the action of the conical rotating three-turn system 8 and the zoom lens 9, the ring ratio and size (outer diameter) of the annular secondary light source can be controlled.

Further, if the diffractive optical element 4 for ring illumination is not used, a diffractive optical element (not shown) for 4-pole illumination can be set in the illumination light path to perform 4-pole illumination. When a parallel light beam having a rectangular cross section is incident, the diffractive optical element for 4-pole illumination has a function of forming a 4-pole light intensity distribution in its far field. Therefore, the light beam passing through the diffractive optical element for 4-pole illumination forms a 4-pole irradiation area formed by, for example, four circular irradiation regions centered on the optical axis AX on the incident surface of the micro-Fris eyepiece 10 . As a result, a quadrupole secondary light having the same illumination area as that formed on the incident surface is formed on or near the rear focal plane of the micro-Fris eyepiece 10. source.

Further, if the diffractive optical element 4 for ring illumination is not used, a diffractive optical element (not shown) for circular illumination can be set in the illumination light path to perform normal circular illumination. When a parallel light beam having a rectangular cross section is incident, the diffractive optical element for circular illumination has a function of forming a circular light intensity distribution in its far field. Therefore, the light beam passing through the diffractive optical element for circular illumination forms a circular irradiation region centered on the optical axis AX on the incident surface of the micro-Frisian eyepiece 10, for example. As a result, a circular secondary light source having the same illumination area as that formed on the incident surface is formed at or near the rear focal plane of the micro-Fris eyepiece 10.

Further, if the diffractive optical element 4 for ring illumination is not used, a diffractive optical element (not shown) for other multi-pole illumination can be set in the illumination light path to perform various multi-pole illumination (2 poles). Lighting, 8-pole lighting, etc.). Similarly, if the diffractive optical element 4 for ring illumination is not used, various diffractive optical elements (not shown) having appropriate characteristics can be set in the illumination path to perform various types of anamorphic illumination.

Fig. 2 is a schematic view showing a configuration of a polarization conversion element of Fig. 1; Fig. 3 is a diagram for explaining the optical rotation of the crystal. 4 is a schematic view of a ring-shaped secondary light source that is set to a polarization state in a peripheral direction by the action of a polarization conversion element. The polarization conversion element 7 described in the present embodiment is disposed at or near the pupil position of the focusless lens 5, that is, the face of the illumination optical device (1 to 13) or its vicinity. Therefore, in the case of ring illumination, a light beam having a substantially annular cross section centered on the optical axis AX is incident on the polarization conversion element 7.

Referring to FIG. 2, the polarization conversion element 7 has an optical axis AX as a whole. As the center-shaped effective region, the annular effective region is constituted by a basic element which is equally divided into eight sectors in the circumferential direction centered on the optical axis AX. Among the eight basic elements, a pair of basic elements facing each other with the optical axis AX have the same characteristics. In other words, the thickness of the eight basic elements along the light transmission direction (Y direction) (the length in the optical axis direction) includes two types of basic elements 7A to D which are different from each other in two groups.

Specifically, the thickness of the first basic element 7A is the largest, the thickness of the fourth basic element 7D is the smallest, and the thickness of the second basic element 7B is set to be larger than the thickness of the third basic element 7C. As a result, one surface (for example, the incident surface) of the polarization conversion element 7 is planar, but the other surface (for example, the emission surface) is uneven by the thickness of each of the basic elements 7A to D. Further, the two faces (incident surface and exit surface) of the polarization conversion element 7 may be formed in a concavo-convex shape at the same time.

Further, in the present embodiment, each of the basic elements 7A to 7D is constituted by a crystal having an optical material such as an optical property, and the crystal optical axes of the respective basic elements 7A to 7D are set to substantially coincide with the optical axis AX. Hereinafter, please refer to FIG. 3 for a brief description of the optical rotation of the crystal. Referring to FIG. 3, the parallel planar plate-shaped optical member 100 composed of crystals having a thickness d is disposed such that its crystal optical axis coincides with the optical axis AX. At this time, the linearly polarized light is emitted in a state where the polarization direction of the incident linearly polarized light is rotated by the angle θ by only the optical axis AX by the optical rotation of the optical member 100.

At this time, the rotation angle (rotation angle) θ of the polarization direction caused by the optical rotation of the optical member 100 is expressed by the following formula (1) by the thickness d of the optical member 100 and the optical rotation energy ρ of the crystal.

θ=d. ρ (1)

In general, the optical energy ρ of a crystal has a wavelength dependence (a property in the case where the values of the optical energy are different depending on the wavelength of light used: optical dispersion). Specifically, when the wavelength of the used light is shortened, the optical energy ρ tends to become large. According to the description on page 167 of "Applied Optics II", the optical energy ρ of the crystal is 153.9 degrees/mm for light having a wavelength of 250.3 nm.

In the present embodiment, when light having linearly polarized light having a polarization direction in the Y direction is incident, the first basic element 7A is set to have a thickness dA and a direction in which the Y direction is rotated by +180 degrees to the Z axis (that is, the Y direction). The linearly polarized light having a polarization direction is emitted. Therefore, at this time, the polarization direction of the light beam passing through the pair of arc-shaped regions 31A formed by the light beams that are subjected to the optical rotation of the pair of first basic elements 7A in the ring-shaped secondary light source 31 shown in FIG. 4 becomes Y. direction.

When the linearly polarized light having the polarization direction in the Y direction is incident, the second basic element 7B is set to have a thickness dB and the Y direction is rotated by +135 degrees with respect to the Z axis (that is, the Y direction is rotated by the Z axis - 45 The linearly polarized light having the polarization direction in the direction after the degree is emitted. Therefore, at this time, the polarization direction of the light beam passing through the pair of arc-shaped regions 31B formed by the light flux of the pair of second basic elements 7B in the ring-shaped secondary light source 31 shown in FIG. 4 becomes Y. The direction is rotated by -45 degrees after the Z axis.

When the linearly polarized light having the polarization direction in the Y direction is incident, the third basic element 7C is set to have the thickness dC, and the Y direction is rotated in the Y direction (ie, the X direction) after the Z axis is rotated by +90 degrees. The linearly polarized light in the direction of polarization is emitted. Therefore, at this time, the circular secondary light shown in FIG. 4 The polarization direction of the light beam that passes through the pair of arc-shaped regions 31C formed by the light beams that are subjected to the optical rotation of the pair of third basic elements 7C in the source 31 is the X direction.

When the linearly polarized light having the polarization direction in the Y direction is incident, the fourth basic element 7D is set to have a thickness dD, and the linearly polarized light having the polarization direction in the one direction after the Y direction is rotated by +45 degrees to the Z axis. Shoot out. Therefore, at this time, the polarization direction of the light beam passing through the pair of arc-shaped regions 31D formed by the light flux of the pair of fourth basic elements 7D in the ring-shaped secondary light source 31 shown in FIG. 4 becomes Y. The direction is rotated by +45 degrees in the direction of the Z axis.

Further, the eight basic elements formed by the respective elements may be combined to obtain the polarization conversion element 7, or the polarization conversion element 7 may be obtained by forming a desired uneven shape (step) on the crystal substrate in a parallel plane plate shape. Further, a circular central region 7E having no optical rotation is provided, which has a size of 1/3 or more of the diameter direction of the effective region of the polarization conversion element 7, and the polarization conversion element 7 is not evacuated by the optical path to perform normal operation. Circular lighting. Here, the central region 7E may be formed, for example, of an optical material such as quartz which is not optically active or may simply be a circular opening. However, the central area 7E is not an essential element in this polarization conversion element 7.

Fig. 5 is a schematic view showing an internal configuration of a polarization measuring unit of Fig. 1; As shown in Fig. 5, in the present embodiment, a wafer measuring unit WS is provided with a polarization measuring unit (polarization state measuring unit) 14 for illuminating light (exposure beam) on the wafer W. The polarization state was measured. The polarization measuring unit 14 has a two-dimensional space at a height position of the exposure surface of the wafer W. The pin hole member 40 is positioned to determine the position. Moreover, when this polarization measuring part 14 is used, the wafer W is evacuated by the optical path.

The light passing through the pin hole 40a of the pin hole member 40 becomes almost parallel light via the collimating lens 41, is reflected by the mirror 42, and is incident on the relay lens system 43. The almost parallel light beam after passing through the relay lens system reaches the detection surface 46a of the two-dimensional space CCD 46 via the λ/4 plate 44 as a phase shifter and the polarization beam splitter 45 as a polarizer. The output of the two-dimensional space CCD 46 is supplied to the control unit 20. Here, the λ/4 plate 44 is rotatably formed around the optical axis, and the λ/4 plate 44 is connected to the setting portion 47 for setting the rotation angle around the optical axis.

Therefore, when the degree of polarization of the illumination light of the wafer W is not 0, the optical axis is rotated by the λ/4 plate 44 via the setting unit 47, and the light intensity distribution in the detection surface 46a of the two-dimensional CCD 46 is generated. Variety. Therefore, the polarization measuring unit 14 uses the setting unit 47 to rotate the λ/4 plate 44 on the optical axis to detect a change in the light intensity distribution in the detection surface 46a, and on the other hand, the detection result is borrowed. The polarization state of the illumination light (polarization degree; Stokes parameters S ₁ , S ₂ , S ₃ related to light) can be measured by the rotational phase shift method.

In addition, as for the rotational phase shifting method, for example, Tsuruta, "Applied Optics for Light Pencil-Light Technicians", New Technology Communications, etc. are described in detail. Actually, the pinhole member 40 (and thus the pin hole 40a) is moved in a two-dimensional space along the wafer surface, and on the other hand, the polarization state of the illumination light in a plurality of positions in the wafer surface is measured. . At this time, the light in the detection surface 46a of the two-dimensional space is detected by the polarization measuring unit 14. When the change in the intensity distribution is detected, the distribution of the polarization state in the ridge of the illumination light can be measured based on the detected distribution information.

Therefore, a λ/2 plate can be used as the phase shifter instead of the λ/4 plate 44 in the polarization measuring unit 14. Regardless of which phase shifter is used, in order to determine the polarization state (ie, 4 Stokes parameters), on the one hand, the relative angles of the optical axes of the phase shifter and the polarizer (polar beam splitter 45) must be changed, and On the one hand, when the phase shifter or the polarizer is retracted from the optical path, the change in the light intensity distribution in the detection surface 46a must be detected in at least four different states.

Further, in the present embodiment, the λ/4 plate 44 as the phase shifter is rotated about the optical axis. However, the polarization beam splitter 45 as a polarizer may be rotated about the optical axis, and the phase shifter may be Both sides of the polarizer rotate the optical axis. Further, one or both of the λ/4 plate 44 for the phase shifter and the partial beam splitter 45 for the polarizer may be detached from the optical path instead of the above-described operation or the above-described operation.

Further, in the polarization measuring unit 14, the polarization state of the light may be changed by the polarization characteristics of the mirror 42. At this time, since the polarization characteristic of the mirror 42 has to be set in advance, the measurement result of the polarization measuring unit 14 must be corrected in accordance with the influence of the polarization state of the polarization characteristic of the mirror 42 by a required calculation so that the measurement result can be corrected. The polarization state of the illumination light can be accurately measured. Further, the mirror is not limited to the mirror, and the measurement result can be corrected in the same manner even when other optical members such as lenses cause a change in the polarization state, so that the polarization state of the illumination light can be accurately measured.

Therefore, the polarization measuring unit 14 is used to measure the polarization state (polarization degree) of the illumination light on the wafer W to determine that the illumination light is in the 瞳 Whether or not it is in an appropriate polarization state (for example, the above-described peripheral direction polarization state, etc.). Then, the control unit 20 can drive the polarization state switching unit 3 (the quarter-wavelength plate 3a and the half-wavelength plate 3b) to the mask M as necessary, depending on the measurement result of the polarization measuring unit 14 (and further The polarization state of the illumination light of the wafer W) is adjusted to a desired polarization state.

In the present embodiment, when the peripheral direction polarizing ring illumination (deformation illumination when the light beam of the annular secondary light source is set to the polarization state in the peripheral direction) is performed, the crystal optical of the 1⁄2 wavelength plate 3b in the polarization state switching unit 3 is performed. The angular position of the optical axis of the shaft must be adjusted. At this time, the polarized light in the Y direction is incident on the diffractive optical element 4 for ring illumination, and the linearly polarized light having the polarization direction in the Y direction is incident on the polarization conversion element 7. . As a result, an annular secondary light source (annular illumination 瞳 distribution) 31 is formed at or near the rear focal plane of the micro-Fris eyepiece 10, as shown in FIG. 4, the light beam passing through the annular secondary light source 31 Set to the polarization state in the surrounding direction.

In the polarization state in the peripheral direction, the light beams respectively passing through the arc-shaped regions 31A to 31D for forming the annular secondary light source 31 are in a linearly polarized state, and the polarization directions thereof are along the respective arc shapes. The tangential direction of the circle when the optical axis AX in the circumferential direction of the regions 31A to 31D is the center is approximately the same. Therefore, in the present embodiment, the annular secondary light source 31 in which the polarization in the peripheral direction is formed can be substantially eliminated without the loss of the amount of light by the optical rotation of the polarization conversion element 7. Further, in the peripheral direction polarizing ring illumination based on the distribution of the annular illumination pupil in the peripherally polarized state, the light irradiated on the wafer W as the last irradiated surface is in a polarized state mainly composed of S-polarized light.

Here, the S-polarized light refers to a linearly polarized light having a polarization direction that is perpendicular to the incident surface (polarization when the electric field vector vibrates in a direction perpendicular to the incident surface). However, the incident surface is defined as a surface where the light reaches the boundary surface of the medium (the surface to be irradiated: the surface of the wafer W), and includes the surface of the normal line of the boundary surface where the point is located and the incident direction of the light. As a result, in the peripheral direction polarizing ring illumination, the optical performance (focus depth, etc.) of the projection optical system can be improved upward, and a high contrast good reticle pattern can be obtained on the wafer (photosensitive substrate).

In general, the above-described method is not limited to ring illumination, and for example, it can also be used for illumination in which a multi-pole illumination 瞳 distribution in a peripherally polarized state is used as a reference. The light incident on the wafer W is in a polarized state mainly composed of S-polarized light, and a high-contrast image of a good reticle pattern can be obtained on the wafer W. In this case, a diffractive optical element for multi-polar illumination (2-pole illumination, 4-pole illumination, 8-pole illumination, etc.) can be set in the illumination optical path instead of the diffractive optical element 4 for ring illumination, and the polarization state switching section The angular position of the optical axis rotation of the crystal optical axis of the 1⁄2 wavelength plate 3b in 3 is adjusted, and when the Y-direction polarized light is incident on the diffractive optical element for multipolar illumination, the polarization direction in the Y direction can be obtained. The linearly polarized light is incident on the polarization conversion element 7.

As described above, according to the light supplied from the light source 1, the illumination optical devices (1 to 13) used for the mask M for the illuminated surface in the present embodiment are disposed between the light source 1 and the mask M. In the optical path, the polarization state switching unit 3 (3a, 3b) and the polarization conversion element 7 are provided as the polarization setting unit, and the polarization state of the light reaching the mask M is set to a predetermined polarization state. However, even by the polarization state switching section 3 and the polarization conversion element The action of 7 illuminates the mask M (and further the wafer W) with light in a desired polarization state, and if there is an optical element that changes the polarization state of the light in the illumination path, the desired polarization state cannot be achieved. Imaging, which in turn may deteriorate imaging performance. In particular, the birefringence caused by the internal deflection in the light transmitting member (lens or parallel plane plate) disposed in the illumination light path changes the polarization state of the passing light.

Hereinafter, it is verified according to a typical design example, for example, the influence of the birefringence caused by the internal deflection. First, in the first verification example, any one of the light-transmitting members (lenses, parallel plane plates) disposed in the optical path between the polarization state switching unit 3 and the mask M is set to have a kind of Birefringence that varies with respect to the rotationally symmetric secondary distribution of the optical axis AX. More specifically, as shown in Fig. 6(a), as the birefringent distribution, the birefringence of the center of the effective region (optical axis AX) is 0 nm/cm, and the amount of birefringence of the periphery of the effective region is 10 nm/cm. Such a birefringence distribution can be thought of as a distribution that monotonically increases from the center of the effective region to the periphery according to a quadratic function. Here, the amount of birefringence refers to a phase difference occurring between P-polarized light and S-polarized light when only 1 cm is transmitted through the light-transmitting member. Since the phase difference is related to the wavelength, in order to make the phase difference have a unified expression, a wavelength is generally regarded as a phase of 360 degrees. Therefore, the unit of the phase difference is normalized by the wavelength and the unit of the angle is relative to the wavelength. Converted to a unitless nm/cm. Further, the phase advance axis and the slow phase axis here are in the radial direction or the concentric direction with respect to the center of the light transmitting member, and the amount of birefringence can be determined to monotonically increase from the center to the periphery according to the quadratic function. a distribution.

At this time, the birefringence which changes according to the above-described secondary distribution of rotational symmetry reaches the center CR of the exposure region ER on the wafer W regardless of which light-transmitting member exists (ie, refer to the optical axis AX: FIG. 6 (c)) The light is completely unaffected by birefringence. However, as an example of a position other than the center CR of the exposure region ER, which of the light-transmitting members is present in accordance with the secondary distribution of the rotational symmetry, it reaches the center CR of the exposure region ER in the X direction. The degree of influence of the birefringence of the light at the farthest peripheral position P1 is different.

Specifically, the light reaching the peripheral position P1 of the exposure region ER has a polarization direction in the X direction at the arrangement position of the polarization conversion element 7 or the 瞳 position in the vicinity thereof (indicated by the circle A and the circle B in FIG. 6( b )) When focusing on the light in which the Stokes parameter S ₁ is 1 in the 瞳 position, which of the light-transmitting members is present in accordance with the secondary distribution of the rotational symmetry, the periphery of the exposure region ER is reached. The deviation of the value of the Stokes parameter S ₁ at the position P1 is known to be approximately between 0.91 and 1.0.

On the other hand, among the lights reaching the peripheral position P1 of the exposure region ER, focusing on the arrangement position of the polarization conversion element 7 or the vicinity of the pupil position, the X direction is rotated in the direction after the Z axis is rotated by -45 degrees. The direction of light (shown by circles C and D in Fig. 6(b)), that is, when focusing on the light in which the Stokes parameter S ₂ is 1 in the 瞳 position, the complex refraction changes according to the secondary distribution of the above-described rotational symmetry In which of the light transmitting members is present, the deviation of the value of the Stokes parameter S ₂ when reaching the peripheral position P1 of the exposure region ER is known to be approximately between 0.92 and 1.0.

Next, in the second verification example, the polarization state switching unit 3 and the mask M are The light-transmitting member of any one of the light-transmitting members disposed in the optical path therebetween is set to have a birefringence which changes as the "inclined distribution which changes linearly along one direction". More specifically, as shown in FIG. 7( a ), when the complex refractive index is distributed, the amount of birefringence around one of the effective regions is 0 nm/cm, and the amount of birefringence of the other periphery of the effective region is 10 nm/cm. The birefringence distribution can be thought of as a distribution that monotonically increases according to a linear function from one periphery along the X direction toward the other. Further, the phase advance axis and the slow phase axis here are desirably set to be parallel or perpendicular to the oblique direction of the birefringence amount.

At this time, even if the birefringence which changes with the above-described tilted primary distribution exists in any of the light-transmitting members, the light having the polarization direction in the X direction among the arrangement positions of the polarization conversion elements 7 or the vicinity of the pupil position ( 7(b) in the circle A and the circle B) or the light having the polarization direction in the Y direction (indicated by the circle E and the circle F in Fig. 7(b)), that is, the Stokes parameter S ₁ in the 瞳 position is 1 The light is limited to the area on the X-axis or the area on the Y-axis of the exposure area ER on the wafer W and is completely unaffected by the birefringence.

However, in which light-transmitting member is present depending on the birefringence which changes according to the primary distribution of the above-described inclination, the arrangement position of the polarization conversion element 7 or the vicinity of the 瞳 position causes the X direction to be rotated by -45 degrees to the Z axis. Light having a polarization direction in the direction (shown by circles C and D in Fig. 7(b)), that is, light having a Stokes parameter S ₂ of 1 in the 瞳 position, reaching the center CR of the exposure region ER on the wafer W ( That is, the degree of influence of the birefringence received when referring to the optical axis AX: FIG. 7(c)) or the peripheral position P1 farthest from the center CR in the X direction is different.

Specifically, when the light C whose Stokes parameter S ₂ is 1 in the 瞳 position reaches the center CR of the exposure region ER, which of the light-transmitting members is present in accordance with the primary distribution of the tilt, the Stokes parameter S The deviation of the value of ₂ is known to be approximately between 0.77 and 1.0. Further, when the light D of the Stokes parameter S ₂ in the 瞳 position reaches the center CR of the exposure region ER, which of the light-transmitting members is present depending on the primary distribution of the tilt first, the Stokes parameter S ₂ The deviation of the values is known to be between approximately 0.65 and 1.0.

On the other hand, when the light C whose Stokes parameter S ₂ is 1 in the 瞳 position reaches the peripheral position P1 of the exposure region ER, which of the light-transmitting members is present depending on the primary distribution of the tilt, the Stokes parameter The deviation of the value of S ₂ is known to be approximately between 0.83 and 1.0.

Further, when the light D of the Stokes parameter S ₂ in the 瞳 position reaches the peripheral position P1 of the exposure region ER, which of the light-transmitting members is present depending on the primary distribution of the tilt distribution, the Stokes parameter S ₂ The deviation of the value is known to be between approximately 0.88 and 1.0.

As a result of the above-described two verification examples, in the light-transmitting member in the optical path between the polarization state switching portion 3 and the reticle M, for example, a secondary distribution of rotational symmetry due to internal deflection occurs. In the case of birefringence, the influence of the birefringence of the second distribution of the rotational symmetry on the polarization state of the light reaching the mask M (and hence the wafer W) is known to be large. Further, in the light transmitting member in the optical path between the polarization state switching portion 3 and the mask M, if a birefringence which changes with the primary distribution of the inclination due to the internal deflection occurs, the first distribution of the inclination is repeated. Refractive pair reaches the mask M (and thus the wafer The effect of the polarization state of the light of W) is known to be large.

Therefore, in the present embodiment, as the first means, each of the light-transmitting members disposed in the optical path between the polarization state switching portion 3 and the mask M in the polarization setting portion (3, 7) can be internally skewed. The resulting amount of birefringence is formed by suppressing an optical material of 5 nm/cm or less. According to this configuration, the change in the polarization state of the light in the illumination light path can be satisfactorily suppressed, and the mask M can be illuminated with the light in a desired polarization state, and the fine pattern can be desired to be polarized. The state is faithfully imaged on wafer W for good exposure.

Similarly, in the exposure apparatus, when the portion from the light source 1 to the projection optical system PL is considered as an illumination optical device, the optical path between the polarization state switching portion 3 and the wafer W in the polarization setting portion (3, 7) is used. Each of the disposed light-transmitting members is formed of an optical material whose amount of birefringence caused by internal deflection is suppressed to 5 nm/cm or less. According to this configuration, the change in the polarization state of the light in the illumination light path can be satisfactorily suppressed, and the wafer W can be illuminated with the light in a desired polarization state, and the fine pattern can be desired to be polarized. The state is faithfully imaged on wafer W for good exposure.

Therefore, according to the above description, while focusing on the influence of the birefringence caused by the internal deflection, a large stress acts when the light transmitting member is held by the outside, corresponding to the birefringence caused by the external stress. The polarization state of the light passing through the light transmitting member is changed. Therefore, in the second means of the present embodiment, each of the optical path between the polarization state switching unit 3 and the mask M (or the wafer W) in the polarization setting unit (3, 7) is disposed. The light transmitting member is maintained, so that the amount of birefringence caused by external stress is suppressed to 5 nm/cm or less. According to this configuration, the change in the polarization state in the illumination light path can be satisfactorily suppressed, and the mask M (or the wafer W) can be illuminated with the light in a desired polarization state, thereby making the fine pattern The desired polarization state is faithfully imaged on the wafer W for good exposure.

Specifically, in the prior art, the light-transmitting member disposed in the illumination light path is generally held in a state of being caught by the two sides by a cylindrical ring-shaped spacer ring. At this time, in principle, the light transmitting member is continuously supported along an annular region centered on the optical axis. However, actually, due to the manufacturing error of the end surface of the spacer ring (the surface in contact with the light transmitting member), the light transmitting member is not continuously supported along the annular region, but is along the circle. A plurality of dot regions of the annular region (especially regions without support intent) are supported.

That is, in the prior art, as shown in Fig. 8(a), the position of the main force F1 acting externally on one optical surface side of the light transmitting member 50 and the other acting on the other optical surface side of the light transmitting member 50 by the outside The position of the main force F2 is not consistent. As a result, as shown by the contour lines in FIG. 8(b), the forces F1 and F2 from the outside react, and a large stress distribution is continuously generated over almost the entire entirety of the effective region 50a of the light transmitting member 50, This causes birefringence in response to such a stress distribution, and changes the polarization state of light passing through the light transmitting member 50.

In the above case, in the present embodiment, as shown in Fig. 9(a), one optical surface side of the light transmitting member 50 is formed into three points by three regions 51a to 51c. At the same time, the other optical surface side of the light transmitting member 50 is supported by three regions 52a to 52c substantially facing the three regions 51a to 51c to form a three-point support. At this time, the position of the three forces F3 acting on the optical surface side of the light transmitting member 50 from the outside almost coincides with the position of the three forces F4 acting on the other optical surface side of the light transmitting member 50 from the outside.

Therefore, as shown by the contour lines in Fig. 9(b), the forces F3 and F4 from the outside react to generate only one of the support regions 51a to 51c (52a to 52c) concentrated in the light transmitting member 50. The stress distribution does not substantially cause a stress distribution in the effective region 50a. As a result, the birefringence caused by the stress distribution in the light-transmitting member supported by the three-point method in the substantially facing region in the present embodiment hardly occurs, and the polarization state of the passing light is hardly caused. Will change due to birefringence.

Fig. 10 is a schematic view showing a configuration of a holding member for supporting a light-transmitting member at three points on both sides in the embodiment. The holding member of the present embodiment includes a first spacer ring 71, and the three supporting portions 71a to 71c included in the three supporting portions 71a to 71c correspond to the light transmitting member 60 to be held in three regions (corresponding to 51a to 51c in Fig. 9). One optical side (upper side in FIG. 10) forms a three-point support; and the second spacer ring 72 has three support portions 72a to 72c in three areas (corresponding to 52a to 52c of FIG. 9). The other optical surface side (lower side in FIG. 10) of the light transmitting member 60 forms a three-point support.

Here, the three support portions 71a to 71c of the first spacer ring 71 are provided substantially at equal angular intervals, and the three support portions 72a to 72c of the second spacer ring 72 are substantially also disposed at equal angular intervals. Further, the first spacer ring 71 and the second spacer ring 72 are positioned to substantially correspond to the support portion 71a. The support portion 72a faces the support portion 71b and 71c and the support portions 72b and 72c substantially face each other. Therefore, the light transmitting member 60 can be supported by the two sides in a three-point manner in the three regions facing substantially upward by the holding members (71, 72).

As described above, in the illumination optical device (1 to 15) of the present embodiment, the light-transmitting members (generally at least one light-transmitting member) required for the light-transmitting members disposed in the optical path face substantially face each other. The three areas are supported by two sides in three ways. At this time, only a stress distribution concentrated in the support region of the light transmitting member is generated, and substantially no stress distribution occurs in the effective region of the light transmitting member. As a result, the birefringence caused by the stress hardly occurs, and the polarized state of the passing light hardly changes due to the birefringence.

Therefore, in the illumination optical device (1 to 15) of the present embodiment, the change in the polarization state of the light in the optical path can be satisfactorily suppressed, and the light can be suppressed in a desired polarized state or a non-polarized state. The mask M (and thus the wafer W) on the illumination surface is illuminated. Therefore, in the exposure apparatus of the present embodiment, the illumination optical device (1 to 15) is used which illuminates the mask M as the illuminated surface with light in a desired polarization state or non-polarization state, and can be based on light. The fine pattern is faithfully transferred onto the wafer (photosensitive substrate) W by the desired illumination conditions corresponding to the mask pattern.

However, in the above-described embodiment, the light-transmitting member disposed in the optical path between the micro-Fris eyepiece 11 for the optical integrator and the mask M for the illuminated surface is easily enlarged in the radial direction, and is externally When the incoming force is received, the polarized state of the light that passes through is easily caused by the birefringence. Change. Therefore, when the change in the polarization state of the light in the optical path is satisfactorily suppressed, the light transmitting member disposed in the optical path between the micro-Fris eyepiece 11 for the optical integrator and the mask M for the illuminated surface is used. Preferably, the larger light transmissive member in the radial direction is supported by the holding member in a three-point manner.

Further, in the above-described embodiment, as shown in FIG. 10, if the holding members (72, 73) support the light transmitting member 60 adjacent to each other by three sides facing the three regions substantially in the three-point manner. When the light is transmitted through the member 61, the three-point support position of the light-transmitting member 60 by the holding members (71, 72) and the three-point support position of the light-transmitting member 61 by the holding members (72, 73) are preferred. It is a rotation of the optical axis to form a deviation in position. According to this configuration, the influence of the three-point support of the plurality of light transmitting members can be dispersed in the angular direction of the optical axis rotation, and the change in the polarization state of the light in the optical path can be satisfactorily suppressed. This point is not limited to the adjacent light-transmitting members, and a plurality of light-transmitting members are also generally applicable.

As described above, in the above-described embodiment, the change in the polarization state of the light in the optical path is well suppressed, and in the state in which the three-point support is achieved by the holding member, the amount of birefringence in the effective region of the light transmitting member can be good. The ground is kept below 5 nm/cm. Further, as shown in FIGS. 11 and 12, it is preferable to use a light transmitting member 63 formed by a notched portion (processed portion) instead of the light transmitting member (60, 61), and the notched portion (processed portion) is in the light transmitting member. The entire circumference of the effective area of 62 has a face 62a that is orthogonal to the optical axis AX. Therefore, as shown in FIG. 10, the two light transmitting members formed by the notched portions (processed portions) as shown by the light transmitting member 62 are supported by three points instead of light. Through the members (60, 61), the external stress caused by the holding can be further suppressed.

In addition, since the external stress caused by the holding is lowered, the support portion of the optical member such as the light transmitting member to which the metal member such as the support portion is connected is limited to the process of "processing the peripheral portion of the optical member". The optical axis AX is perpendicular to the plane portion. It is also possible that at least some of the facets of the optical member belong to the plane portion.

Further, in the case where the processed planar portion of the optical member is subjected to stress by the supporting member, the support form having no deviation in the radial direction or the rotational direction is an example of the three-point support, but is not limited thereto. Any support form can be used if an unbiased support form can be used in the radial or rotational direction.

Further, when the above-mentioned "support" process is performed, the deflection of the optical member near the support portion is measured by a skew measuring machine or the like, and depending on the measured deflection, it is more preferable to perform a process for the torque of a type of pressure-receiving device. Or the spring constant is adjusted so that the amount of birefringence generated by the stress becomes 5 nm or less (more preferably 2 nm or less).

Further, as shown in FIG. 11 and FIG. 12, when a portion (peripheral portion) having a distance of 3 mm or more from the effective region of the light transmitting member 62 is formed as a notch portion having a surface 62a orthogonal to the optical axis AX, light is transmitted through The external stress caused by the retention of the member 62 is further reduced.

Further, in the first means, it is preferable to form each of the light-transmitting members by using an optical material, and the amount of birefringence of the optical material with respect to the internal deflection is 2 nm/cm or less. Further, in the second means, it is preferable to hold each light The amount of birefringence caused by external stress is suppressed to 2 nm/cm or less through the member. At this time, the change in the polarization state of the light in the illumination light path can be satisfactorily suppressed, and the fine pattern can be faithfully imaged on the wafer W in a desired polarization state for good exposure. Further, the first means and the second means can be expected to multiply the effect.

Further, in the above description, although focusing on the influence of the birefringence caused by the internal deflection or the external stress, the pair of curved mirrors M1 and M2 disposed in the optical path of the imaging optical system 13 are When a wide incident angle range is incident, a phase difference (PS) is generated between the P-polarized light and the S-polarized light due to reflection, and the polarization state of the light passing through the curved surfaces M1 and M2 is changed. Therefore, in the third embodiment, the curved surfaces M1 and M2 are respectively formed in the third means, so that the phase difference caused by the reflection between the light incident on the reflective film by the P-polarized light and the light incident on the S-polarized light is incident on the reflective film. The total light is within 15 degrees.

According to the above configuration, the polarization state of the light in the illumination light path including the curved surfaces M1 and M2 can be satisfactorily suppressed, so that the mask M (or the wafer W) is illuminated in the desired polarization state, and further The fine pattern is faithfully imaged on the wafer W in a desired polarized state for good exposure. Further, in the third means, the phase difference due to reflection between the P-polarized light and the S-polarized light is preferably suppressed to within 10 degrees. At this time, the change in the polarization state of the light in each of the curved surfaces M1 and M2 can be more well suppressed, and the fine pattern can be more faithfully imaged on the wafer W in a desired polarized state for good exposure.

However, for example, a rotationally asymmetric distribution due to internal skew (typically, oblique distribution) and if the changed complex refractive index occurs in a plurality of light-transmitting members, the polarization state in the field can be made on the one hand by the combination of the complex refractive index distributions in the respective light-transmitting members ( The polarization state in the pupil plane associated with each position in the exposure region ER on the wafer W is substantially non-uniform, and on the other hand, the polarization state in the pupil plane is caused by the desired polarization state (for example, the peripheral direction) The polarization state) changes to a substantially different state. If the polarization state in the field is substantially non-uniform (for example, a polarization state in the pupil plane related to light reaching the center of the exposure region ER and a polarization state in the pupil plane related to light reaching the periphery of the exposure region ER) Substantially different, a so-called in-field line width difference may occur every time the line width of the pattern formed on the wafer W is deviated in the position in the exposure area ER.

Further, if the polarization state in the pupil plane is substantially changed to a different state from the desired polarization state, for example, a pattern extending on the wafer W in the longitudinal direction and a pattern extending in the lateral direction is elongated. When there is a deviation between the line widths, a so-called VH line width difference occurs. Therefore, in the fourth aspect of the present embodiment, each of the light transmitting members is positioned at a desired rotational angle position centering on the optical axis AX so as to cause the polarization state switching portion 3 and the light in the polarization setting portion (3, 7). The influence of the birefringence caused by the internal deflection in each of the light-transmitting members disposed in the optical path between the cover M (or the wafer W) is reduced by cancellation.

According to the above configuration, the polarization state of the light in the illumination light path can be satisfactorily suppressed, and the mask M (or the wafer W) can be illuminated with the light in a desired polarization state, and the fine pattern can be made The desired polarization state is faithfully imaged on the wafer W for good exposure. More specifically, By the above-described frictional crocking means, the polarization state in the field can be adjusted to be substantially uniform, and the occurrence of the difference in the line width of the field can be suppressed, and the polarization state in the face can be adjusted to be close to The desired polarization state suppresses the occurrence of the VH line width difference.

The first to fourth means described above may be used singly, and two or more means may be used in combination as appropriate. Hereinafter, a method of manufacturing the illumination optical device according to the embodiment will be described. Fig. 13 is a flow chart showing the steps of the method of manufacturing the illumination optical device of the embodiment. Referring to Fig. 13, in the manufacturing method of the present embodiment, for example, an ingot (S1) composed of an optical material such as quartz can be produced. Specifically, the ingot made of quartz can be obtained, for example, by a soot method or a direct method. For details, refer to International Publication WO 00/41226 and the like.

Next, the ingot obtained in the manufacturing step S1 is cut (cut-out), and a bulk material for forming each of the light-transmitting members in the illumination device is prepared (S2). Here, the concept of the block material is that the original object cut out by the ingot or the object which has been processed to some extent in the case of corresponding to the size and shape of the corresponding light transmitting member. Specifically, when the light-transmitting member to be formed is a lens, the shape of the block is preferably made into a thin cylindrical shape. The diameter and thickness of the cylindrical block (i.e., the disc material) are preferably set to coincide with the effective outer diameter of the lens and the thickness in the optical axis direction. In the preparation step S2, the block cut by the ingot is subjected to an annealing treatment as necessary.

Next, the amount of birefringence of each of the blocks obtained in the preparation step S2 is measured (S3). Specifically, in the measuring step S3, for each block The distribution of the phase advance axis direction and the amount of birefringence (the amount of phase difference between the P-polarized light and the S-polarized light due to internal deflection when passing through the unit distance) was measured. Further, for the measurement of the phase advancement axis direction and the amount of birefringence of each block, for example, International Publication No. WO 00/41226 or WO 03/007045 can be referred to.

Next, a combination of a light transmitting member and a block for constituting one illumination optical device is set (S4). Specifically, in the combination setting step S4, the combination of the blocks to be used in the configuration of the illumination optical device is initially selected, and the rotational angle position of the optical axis rotation of each of the blocks in the combination is initially determined. In the combination setting step S4, although there are various combinations of the blocks, the following description focuses only on one combination of the blocks.

Therefore, in the manufacturing method of the present embodiment, when the combination of the initially set blocks is used in the combination setting step S4, whether or not the change in the polarization state of the light in the illumination light path can be suppressed by the simulation is desired. Evaluation is performed within the range (S5). Specifically, in the evaluation step S5, for example, the reflection of the curved mirror (M1, M2) can be referred to the data (curvature radius, center thickness, air gap, refractive index, etc.) of each lens (generally a light transmitting member). The design value (or measurement value) of the PS phase difference of the incident angle of the film is measured in the measurement result (phase forward axis direction and birefringence amount) of each block obtained in step S3 to calculate the illumination light path. The change in the polarization state of light.

However, in the method of describing the above-described polarization state, Stokes parameters (S ₀ , S ₁ , S ₂ , S ₃ ) can be used. Here, S _{0 is} defined as the full intensity of light (I _0° + I _90° ), S ₁ is the intensity difference between the transversely polarized light and the longitudinally polarized light (I _{0° -} I _90° ), S ₂ is the 45-degree polarized light, and 135 The intensity difference of the degree of polarization (I _{45° -} I _135° ), and S ₃ is the difference in intensity between _right - _handed polarization and left-handed polarization (I _{turn right -} I _{turn left} ). Further, a reference Stokes parameter (S ₁ ', S ₂ ', S ₃ ') in which S ₀ has been normalized to 1 may be used. Here, S ₁ '=S ₁ /S ₀ , S ₂ '=S ₂ /S ₀ , and S ₃ '=S ₃ /S ₀ .

As shown in Fig. 14 (a), in the evaluation step S5, the light is incident on the rectangular lattice point of the entrance pupil of the optical system. At this time, as shown in FIG. 14(b), when all incident light rays are transversely polarized light, the reference Stokes parameters (S ₁ ', S ₂ ', S ₃ ') = (1, 0, 0). In the evaluation step S5, by the test of the tracking of the polarized light, the influence of the birefringence caused by the internal deflection of the light transmitting member or the influence of the PS phase difference of the reflecting film of the curved mirror (M1, M2) may be It is calculated whether or not there is a change such as a polarization state of incident light toward the entrance pupil.

Therefore, as shown in FIG. 14(c), a rectangular grid point corresponding to the entrance pupil is obtained to obtain a polarization map of the emission pupil. Specifically, for each ray of a rectangular lattice point incident on the 瞳, the incident polarization state (S ₁ ', S ₂ ', S ₃ ') = (1, 0, 0) is used to determine the emission polarization state (S ₁ ", S ₂ ", S ₃ "). In the evaluation step S5, the incident transversely polarized light component S ₁ '=S(in) is emitted, and the horizontally polarized light component S ₁ ′′=S(out) is output, if S(out) /S(in)=S ₁ ”/S ₁ '≧0.8, the change in the polarization state of the light in the illumination light path can be evaluated as “suppressed within a desired range”.

Further, as shown in Fig. 14 (d), the case where the light of the longitudinally polarized light is incident on the rectangular lattice point of the entrance pupil of the optical system is the same, and if S(out) / S(in) = S ₁ "/ When S ₁ '≧0.8, the change in the polarization state of the light in the illumination light path can be evaluated as "suppressed within the desired range." Further, as described above, the imaging performance of the high numerical aperture projection optical system is increased upward. In the evaluation step S5, the incident enthalpy is divided into four parts, and the whole direction is polarized in the peripheral direction, and light having a different polarization direction can also be incident on the photo-indicating state in the peripheral direction as shown in Fig. 15 (a). In each of the 瞳 divided regions, however, in Fig. 15(a), for the sake of explanation, a part of the rectangular lattice points has been omitted.

In the above case, the light of the transversely polarized light is incident into the pupil division regions A and B, and the light of the longitudinal polarization light is incident into the pupil division regions C and D. Therefore, the reference Stokes parameter (S ₁ ', S ₂ ', S ₃ ') of the incident ray becomes ( ₁ , 0, 0) in the regions A and B, and becomes (-1, 0) in the regions C and D. , 0). Then, when the polarization state of the incident ray is completely maintained in the ideal state, the reference Stokes parameters (S ₁ ", S ₂ ′, S ₃ ′′) of the emitted ray corresponding to the regions A and B become (1, 0, 0). And the reference Stokes parameters (S ₁ ", S ₂ ", S ₃ ") of the emitted rays corresponding to the regions C and D become (-1, 0, 0). Therefore, even in this case, when S(out)/S(in)=S ₁ ”/S ₁ '≧0.8, the change in the polarization state of the light in the illumination light path can be evaluated as "suppressed at the desired Within the scope".

Similarly, as shown in FIG. 15(b), the incident 瞳 is divided into eight parts, and the entire light is in a peripherally polarized state, and light rays having different polarization directions may be incident on each of the 瞳 division regions. However, in Fig. 15(b), for the sake of simplicity, a part of the rectangular lattice points has been omitted. At this time, the reference Stokes parameters (S ₁ ', S ₂ ', S ₃ ') of the incident ray become (1, 0, 0) in the 瞳 division regions A and B, and become (in the 瞳 division regions C and D) ( -1, 0, 0) is (0, 1, 0) in the 瞳 division regions E and F, and becomes (0, -1, 0) in the 瞳 division regions G and H.

Then, when the polarization state of the incident ray is completely maintained in the ideal state, the reference Stokes parameters (S ₁ ", S ₂ ′, S ₃ ′′) of the emitted ray corresponding to the regions A and B become (1, 0, 0). ), the reference Stokes parameters (S ₁ ", S ₂ ", S ₃ ") of the emitted rays corresponding to the regions C and D become (-1, 0, 0), and the emitted rays corresponding to the regions E and F The normalized Stokes parameters (S ₁ ", S ₂ ", S ₃ ") become (0, 1, 0), the reference Stokes parameters (S ₁ ", S ₂ " of the emitted rays corresponding to the regions G and H" , S ₃ ”) becomes (0, -1, 0). Therefore, when corresponding to the regions A to D, S(out)/S(in)=S ₁ ”/S ₁ '≧0.8, and when corresponding to the regions E to H, S(out)/S( When in)=S ₂ ”/S ₂ '≧0.8, the change in the polarization state of the light in the illumination light path can be evaluated as “suppressed within a desired range”.

Further, in the above description, the polarization index (evaluation index) is determined in each ray diagram of the incident pupil to display the criterion for optimization. In an actual illumination optical device, the secondary light source has a circular shape, a ring shape, a quadrupole shape, and the like, and maintains an area in the incident pupil plane. Therefore, in the evaluation step S5, the value of the average value of the polarization index S(out)/S(in) of the light contained in the opening in each of the secondary light sources is 0.8 or more as a criterion for optimization. Further, in the above description, although the polarization state of the intra-orbital ray diagram related to one point in the illumination region is described, the illumination device has the average value of the polarization index S(out)/S(in). The value at or above 0.8 is used as a benchmark for optimization.

Further, in the evaluation step S5, the value of the shift value of the average value of the polarization index S(out)/S(in) relating to each point in the illumination region is 0.05 or less as a criterion for optimization. Further, in the evaluation step S5, for the sake of simplicity, a part of the optical system between the mask shutter 12 and the mask M is targeted. Here, this part of the optical system has a curved mirror (M1, M2) and will be affected by A large diameter lens that is affected by the deflection.

As described above, in the evaluation step S5, when the combination of the blocks selected in the initial stage of the combination setting step S4 is processed into the respective light transmission members and the positions of the respective light transmission members are determined in the initial rotation angle positions, Whether or not the above-described optimization criterion can be satisfied and whether or not the change in the polarization state of the light in the illumination light path is suppressed within a desired range is evaluated. When the evaluation result is affirmative (YES in FIG. 13), the process proceeds to process step S6 to process each of the blocks to form each of the light-transmitting members.

On the other hand, if the evaluation result is timed (in the case of NG in Fig. 13), the rotation angle position of an arbitrary block (light transmitting member) must be changed (S7).

That is, in the changing step S7, it is necessary to adjust the polarization state in the field to be substantially uniform, and at the same time, in order to adjust the polarization state in the pupil plane to approximate the desired polarization state, the above-mentioned The means of frictional crocking. Then, when the position is directly determined in the rotation angle position after the change of the arbitrary light transmission member, the change in the polarization state of the light in the illumination light path is suppressed to be within the desired range. For example, here, the rotation angle position of the reference axis (optical axis rotation) of each block (light transmission member) caused by the friction decoloring means is optimized to "whether or not the internal deflection is caused. The amount of refraction should be evaluated by the optimization of the optical axis of the optical system which is appropriately suppressed and the asymmetric birefringence distribution.

If the evaluation result is affirmative, the process proceeds to the process step S6, and if the evaluation result is timed, the above-described change step S7 and evaluation step S5 are repeated until an affirmative evaluation result is obtained. If obtained in the evaluation step S5 In the case of a positive evaluation result, each of the blocks is processed in the processing step S6 as described above to form each of the light-transmitting members. Each of the light-transmitting members formed through the processing step S6 is set in the optimized rotation angle position in the evaluation step S5 to perform the configuration (S8).

Further, in the manufacturing method of the present embodiment described above, if it is difficult to obtain an affirmative evaluation result in the evaluation step S5, as shown in Fig. 13, for example, an arbitrary block material must be changed to another type of composite block (S9). . Further, the combination of the blocks can be changed. Further, in the second changing step S9, an arbitrary block material may be changed to a block material having a desired birefringence distribution which is given when the optimization criterion is satisfied. Hereinafter, a means for giving a desired birefringence distribution will be briefly described.

For example, in the case of an amorphous conductive member formed of quartz or an amorphous material such as quartz doped with fluorine (hereinafter referred to as "modified quartz"), the complex refractive index does not occur in an ideal state. When quartz or modified quartz is mixed with impurities or the quartz formed at a high temperature is cooled to generate a temperature distribution, birefringence due to internal stress is exhibited.

Therefore, the desired birefringent distribution can occur in quartz or modified quartz by the amount or type of impurities mixed in the ingot, or by adjustment of the thermal process. In other words, by adjusting at least one of the impurity distribution and the density distribution caused by the thermal process, a desired rotational symmetry (or non-rotational symmetry) to the optical axis can be imparted in the amorphous transmission member. Complex refraction distribution.

Further, for example, OH, Cl, metal impurities, and soluble gases can be used as impurities. In the direct method, a content governed by the amount of mixing can be considered. There are hundreds of pp or more of OH, and secondly, consider a Cl containing tens of pp. When these impurities are mixed into the ingot, the thermal expansion of the material changes (for example, when it is cooled after annealing), the shrinkage portion of the portion where the impurities have been mixed becomes large, and an internal stress caused by the difference in shrinkage occurs. And stress birefringence occurs. Further, regarding the thermal process, regardless of the direct method described above, the VAD (vapor axial deposition) method, the sol-gel method, the plasma ablation method, and the like are all present in the manufacturing method. .

Moreover, in the manufacturing method of the above-described embodiment, after the evaluation step S5, the processing step S6 is performed, and each of the blocks is processed to form each of the light-transmitting members. However, the present invention is not limited to this, and the evaluation step S5 may be performed first after the measurement step S3 or may be performed simultaneously with the evaluation step S5.

Further, in the above-described manufacturing method of the present embodiment, after the measurement step S3, a block picking step may be added to select a block in which the amount of birefringence is suppressed to 5 nm/cm or less. At this time, an affirmative evaluation result is easily obtained in the evaluation step S5. Further, when it is easier to obtain an affirmative evaluation result in the evaluation step S5, it is preferable to select a block in which the amount of birefringence is suppressed to 2 nm/cm or less.

As described above, the embodiment resulting from the fifth means for evaluating the first to fourth means is shown in Fig. 16. As shown in FIG. 16, in the step S10 in which the optical member for holding appropriate internal stress is selected, the block or lens or the like which is selected to have a birefringence amount of 5 nm/cm or less is selected by measurement of the optical member so that The amount of birefringence caused by the internal deflection of the optical member is managed. Here, in the fourth means with FIG. Corresponding to the steps, step S10 of Fig. 16 includes step S1, step S2 and step S3.

Further, in step S10, although the optical member is mainly described as a light transmissive optical member, the optical system disposed in the optical path between the polarized light setting unit (3, 7) and the illuminated surface (such as a mask) contains a reflective member. It is needless to say that it is also desirable to select a reflection member such that a phase difference due to reflection between light incident on the reflection film of the reflection member and light incident on the S-polarized light is relative to all incident on the reflection film. The light is within 15 degrees.

Further, in order to make the device have higher performance, it is needless to say that it is more desirable to select an optical member whose amount of birefringence caused by internal deflection has been suppressed to 2 nm/cm or less.

Next, in response to the step of the fourth means of Fig. 15, the setting step S11 of the position of the rotation angle includes step S4, step S5, step S7 and step S9. For example, in step S11, by optimizing the rotational angle position of the reference axis (optical axis rotation) of each optical member (block, light transmitting member) caused by the frictional crocking means, it is possible to It was evaluated that the amount of birefringence caused by the internal deflection should be optimized by the optical axis of the optical system and the asymmetric birefringence distribution which are appropriately suppressed. Further, in step S11, when the optical system disposed in the optical path between the polarization setting unit (3, 7) and the illuminated surface (such as a mask) includes a reflection member, the optical system includes the reflection selected in step S10. The reflection characteristics of the members and the reflection characteristics were evaluated.

Here, when the optimization is not achieved in step S11, the process returns to step S10. Among them, an optical member that maintains an appropriate internal deflection distribution is again selected. When the optimization has been completed in step S11, the next step S12 is performed.

In the manufacturing step S12 of the optical system (optical unit), in accordance with the steps of the fourth means of FIG. 15, the manufacturing step S12 includes the step S6 of forming the respective optical members and the fabricating step S8 of the optical members. . Here, in step S12, when the optical member of the step formed by the processing of each optical member is assembled, as shown in FIGS. 9 to 12, it includes the steps required for holding or supporting the optical member, so as to borrow The amount of birefringence generated by the deflection (stress or the like) given from the outside is suppressed to 5 nm/cm or less. That is, step S12 includes a step of managing the amount of birefringence or birefringence distribution caused by the skew given by the outside, and this management step includes the above-described holding step.

Further, in step S12, in order to make the apparatus have higher performance, it is needless to say that by maintaining an optical member, the amount of birefringence caused by internal deflection is suppressed to 2 nm/cm.

As described above, if the means shown in Fig. 16 is described from one viewpoint, the complex of the optical system disposed in the optical path between the polarized light setting portion (3, 7) and the illuminated surface (photomask, etc.) The step of managing the amount of refraction, or the means mentioned in the optical system configuration in which the amount of birefringence in the optical path between the polarized light setting portion and the illuminated surface has been managed, from the illuminated surface to the top surface A good distribution of illumination in a polarized state can be obtained.

Moreover, when the means shown in FIG. 16 is described from one viewpoint, the optical state of the light incident on the illuminated surface is made by the optical system disposed in the optical path between the polarized light setting portion and the surface to be illuminated. Specified polarization The state in which the polarization characteristic in the optical path between the polarization setting unit and the illuminated surface is maintained, or the polarization state of the light on the illuminated surface in the optical path between the polarization setting unit and the illuminated surface becomes In the predetermined polarization state, the means mentioned in the arrangement of the optical system used when the polarization state of the light reaching the illuminated surface is maintained, a good polarization state can be obtained from the illuminated surface and the surface of the surface. The distribution of lighting.

In the above two aspects, it is desirable to obtain information relating to one or more optical systems (including all optical systems) disposed between the polarization setting unit and the illuminated surface (for example, and birefringence). The optical performance information permitted by the optical system is at least one type of information such as measurement relating to birefringence of at least one optical member used in the optical system, as shown in step S3 of FIG.

Further, in FIG. 16, although the measurement of the optical component management is performed by way of example based on the measured value of the birefringence amount obtained by the bulk material, the block member may be subjected to predetermined processing to form an optical member such as a lens, depending on This step S10 is performed by the birefringence or birefringence distribution of the processed optical member. At this time, the processing steps of the optical members in the step S12 are not required, and the constituent steps of the respective optical members can be performed.

In addition, although the manufacturing example of the illuminating device or the exposure device provided with the illuminating optical device is mainly shown in FIG. 16, the case where the illuminating optical device is regularly maintained (repair, hold, check) can be used. 16 to illustrate.

First, at the time of maintenance, in step S20 of selecting an appropriate optical member for switching or an optical unit for switching, first, one is obtained in advance. Information such as the polarization optical performance of the illumination optical system (information such as the measured value of the polarization measuring unit 14 or the measurement value at the time of manufacture of the illumination optical system), and the optical path between the polarization measuring unit and the illuminated surface Optical information such as the birefringence characteristic or the polarization characteristic of the optical system to be disposed (information such as the actual measurement value of the polarization measuring unit 14 or the measurement value at the time of manufacturing the optical system) or between the polarization measuring unit and the illuminated surface At least one of information on the optical properties of the optical path (the measured value of the polarization measuring unit 14 or the measured value at the time of manufacturing the optical member) relating to at least one optical member of the optical system to be disposed in the optical path. Then, as noted above, based on information relating to the resulting optical system, to define the optical member or optical unit to be switched, and to select one that can reduce the amount of birefringence caused by internal deflection to less than 5 nm/cm. An appropriate optical member for switching or an appropriate optical unit for switching.

Next, after each optical member is processed, each optical member is assembled into an illumination optical system. The holding or supporting step of the optical member is included in such a constitutional step such that the amount of birefringence generated by the deflection (stress) applied from the outside is suppressed to 5 nm/cm or less. That is, step S22 includes a management step of managing the amount of birefringence or birefringence distribution generated by the deflection applied from the outside, and the management step includes the above-described holding step.

Further, in the step S20 of FIG. 16, the measurement of the amount of the birefringence obtained by the block is used to show an example in which the management of the optical member is performed, but the block may be subjected to predetermined processing to form a lens or the like. The optical member is subjected to the step S20 according to the birefringence amount or the birefringence distribution of the processed optical member. At this time, in the manufacturing steps of the optical system (adjustment step) The processing steps of the optical members in S22 can be performed without the need for the construction steps of the optical members.

As described above, if the maintenance means shown in Fig. 16 is described from one viewpoint, the optical system disposed in the optical path between the polarization setting portion (3, 7) and the illuminated surface (mask, etc.) The step of managing the birefringence amount, or the means mentioned in the optical system configuration in which the amount of birefringence in the optical path between the polarized light setting portion and the illuminated surface has been managed, from the illuminated surface to the upper surface A good distribution of illumination in a polarized state can be obtained.

Further, when the maintenance means shown in Fig. 16 is described from one viewpoint, the polarization state of the light incident on the illuminated surface is made by the optical system disposed in the optical path between the polarization setting portion and the illuminated surface. In a predetermined polarization state, in the step used when the polarization characteristic in the optical path between the polarization setting unit and the illuminated surface is held, or in the light path on the illuminated surface between the polarization setting unit and the illuminated surface The polarized state is a predetermined polarized state, and the means mentioned in the arrangement of the optical system used when the polarized state of the light reaching the illuminated surface is maintained is obtained from the illuminated surface and the upper surface. Good distribution of illumination in a polarized state.

In the above two aspects, it is desirable to obtain information relating to one or more optical systems (including all optical systems) disposed between the polarization setting unit and the illuminated surface (for example, as shown in FIG. 16 ). In the step S20, at least one of information such as measurement of optical performance in the optical system related to birefringence or the like, and information on measurement of birefringence of at least one optical member used in the optical system is displayed. Information, etc.).

Moreover, in the maintenance means of Fig. 16, in order to make the device more flexible Preferably, in step S20, an optical member is used so that the amount of birefringence generated by internal deflection is suppressed to 2 nm/cm or less. Further, in step S22, it is needless to say that it is more desirable to suppress the amount of birefringence caused by external deflection to be 2 nm/cm or less by holding an optical member.

Further, although steps S10 to S12 of FIG. 16 are mainly described as the contents of the manufacturing method of the illumination optical system, from another viewpoint, steps S10 to S12 of FIG. 16 may also be referred to as manufacture of an exposure apparatus. The method, the adjustment method of the illumination optical system, or the adjustment method of the exposure device.

Further, although steps S20 to S22 of FIG. 16 are mainly explained by the content of the adjustment method of the illumination optical system, from another viewpoint, steps S20 to S22 of FIG. 16 may also be referred to as manufacture of an exposure apparatus. The method, the adjustment method of the illumination optical system, or the adjustment method of the exposure device.

Further, in the above-described embodiment, the polarization conversion element 7 is disposed before the conical rotary axicon system 8 (with or without the focus of the focus lens 5). However, it is not limited to such a manner, for example, the polarization conversion element 7 may be disposed before or after the pupil of the imaging optical system 13 or its vicinity or the micro-Frisian eyepiece 10. However, if the polarization conversion element 7 is disposed in the optical path of the imaging optical system 13 or before and after the micro-Frisian eyepiece 10, the effective diameter required for the polarization conversion element 7 tends to become large, and at this time, it cannot be considered It is not easy to obtain a large crystal substrate with high quality."

Further, in the above-described embodiment, at least one surface (for example, the emitting surface) of the polarization conversion element 7 is formed in a concavo-convex shape, and the polarization conversion element 7 has a thickness distribution which varies in a discrete manner (discontinuously) in the peripheral direction. However, it is not limited to this form, at least one side of the polarization conversion element 7 (for example, The exit surface can be formed in a curved shape, and the polarization conversion element 7 has a thickness distribution that changes in a nearly discontinuous manner in the peripheral direction.

Further, in the above embodiment, the polarization conversion element 7 is constituted by dividing the effective area of the ring into eight basic elements of eight fan shapes corresponding thereto. However, the present invention is not limited to this form, for example, by dividing the effective area of the circular shape into 8 basic elements corresponding to 8 sectors, or by dividing the effective area of a circular shape or a ring into 4 parts. The basic element of the four fan shapes, or the basic element of 16 fan shapes corresponding to 16 parts by a circular or annular effective area, may also constitute the polarization conversion element 7. In other words, various modifications are possible in the shape of the effective region of the polarization conversion element 7, the number of divisions of the effective region (the number of divisions of the basic elements), and the like.

Further, in the above-described embodiment, crystals are used to form the respective basic elements 7A to 7D (further, the polarization conversion element 7 is formed). However, it is not limited to this form, and other optical materials having optical rotation may be used to form the respective basic elements. At this time, it is preferred to use an optical material having an optical energy of 100 degrees/mm or more for light of a wavelength. That is, when an optical material having a small optical energy is used, in order to obtain a rotation angle required for the polarization direction, the required thickness is excessively large, which may cause a loss of light amount, and it is preferable not to consider such a case.

In the exposure apparatus according to the above-described embodiment, the reticule is illuminated by the illumination optical device (illumination step), and the transfer pattern formed on the photomask is used for photosensitivity using the projection optical system. Exposure on the substrate (exposure step), can be made into micro-components (semiconductor components, camera elements) Pieces, liquid crystal display elements, thin film magnetic heads, etc.). In the following, an example in which a predetermined circuit pattern is formed on a wafer or the like as a photosensitive substrate by using the exposure apparatus of the above-described embodiment, and an example of a method for obtaining a semiconductor element for a micro device will be described with reference to FIG. Flow chart to illustrate.

First, in step 301 of FIG. 17, a metal film is deposited on a single lot of wafers. In the next step 302, a photoresist is applied to the metal film on the batch of wafers. Then, in step 303, using the exposure apparatus of the above embodiment, the image of the pattern on the reticle is sequentially exposed and transferred to each shot area on one of the wafers via its projection optical system. Then, in step 304, after the photoresist on the batch of wafers is developed, in step 305, the wafer is etched by using the photoresist pattern as a mask, and then on the mask. A circuit pattern corresponding to the pattern is formed on each of the shot regions on each wafer. Then, a device of a semiconductor element or the like is formed by formation of a circuit pattern of a higher layer. According to the above method for manufacturing a semiconductor device, a semiconductor device having a very fine circuit pattern can be obtained with a good throughput.

Further, in the exposure apparatus of the above-described embodiment, a predetermined pattern (circuit pattern, electrode pattern, or the like) is formed on a plate (glass substrate), and a liquid crystal display element as a micro device can be obtained. Hereinafter, an example of the means at this time will be described with reference to the flowchart of FIG. 18. In Fig. 18, in the pattern forming step 401, the pattern of the mask is transferred and exposed to a photosensitive substrate (a glass substrate coated with a photoresist, etc.) using the exposure apparatus of the above-described embodiment to perform a so-called photolithography step. By such a photolithography step, a predetermined pattern including a plurality of electrodes or the like can be formed on the photosensitive substrate. Of course Thereafter, after the exposed substrate is subjected to each of the steps of the developing step, the etching step, and the photoresist stripping step, a predetermined pattern can be formed on the substrate for the next color filter forming step 402.

Next, in the color filter forming step 402, the groups of three dots corresponding to red (R), green (G), and blue (B) are arranged in a matrix or a kind on the one hand. A color filter in which filter banks of three lines of R, G, and B are arranged in a plurality of horizontal scanning directions. Then, after the color filter forming step 402, a cell assembly step 403 is performed. In the cell assembly step 403, the liquid crystal panel (liquid crystal cell) is assembled using the substrate having the predetermined pattern obtained in the pattern forming step 401 and the color filter obtained by the color filter forming step 402. .

In a cell assembling step 403, for example, a liquid crystal having a predetermined pattern (which is obtained by the pattern forming step 401) and a color filter obtained by the color filter forming step 402 are injected to form a liquid crystal. Liquid crystal panel (liquid crystal cell). Then, in the module assembly step 404, various components such as a circuit for performing display operation of the assembled liquid crystal panel (liquid crystal cell) and a backlight module are mounted to complete the liquid crystal display element. According to the method for manufacturing a liquid crystal display device described above, a liquid crystal display device having a very fine circuit pattern can be obtained with a good throughput.

Further, in the above-described embodiment, although an ArF excimer laser light of 193 nm wavelength or KrF excimer laser light of 248 nm wavelength is used as the exposure light source, the present invention is not limited thereto, and may be used. Other suitable laser sources to which the invention is applicable, for example, an F ₂ laser source for supplying laser light having a wavelength of 157 nm can be used. Further, in the above-described embodiment, the present invention has been described by taking an exposure apparatus including an illumination optical device as an example. However, it is apparent that other general illumination devices that can illuminate an illuminated surface can be applied to the present invention.

Further, in the above-described embodiment, the so-called liquid immersion method is also suitably employed, and in this case, the optical path between the projection optical system and the photosensitive substrate is filled with a medium (typically liquid) having a refractive index larger than 1.1. In this case, the means for filling the optical path between the projection optical system and the photosensitive substrate with a liquid may be a method of partially filling a liquid, or a special opening, as disclosed in International Publication No. WO 99/49504. In the case where the stage for holding the substrate to be exposed is moved to the liquid bath, the liquid having a predetermined depth is formed on the stage disclosed in Japanese Laid-Open Patent Publication No. Hei 10-303114. The means used for the groove and the substrate to be held in the groove, and the like.

It is preferred to use a liquid which is only transparent to the exposure beam and has a high refractive index, which has stability to the photoresist applied to the projection optical system or the surface of the substrate. For example, when KrF excimer laser light or ArF excimer laser light is used as an exposure light source, pure water or deionized water can be used as the liquid. Further, when F ₂ laser light is used as the exposure light source, for example, a liquid of a fluorine element such as a fluorine series oil or a perfluoropolyethylene (PFPE) which can transmit F ₂ laser light can be used as the liquid.

While the present invention has been described in its preferred embodiments, the present invention is not intended to limit the invention, and the present invention may be modified and modified without departing from the spirit and scope of the invention. The scope of protection is subject to the definition of the scope of the patent application.

1‧‧‧Light source

3‧‧‧Polarized state switching unit

3a‧‧1/4 wavelength plate

3b‧‧‧1/2 wavelength plate

4‧‧‧Diffractive optical elements (beam conversion elements)

5‧‧‧Focus-free lens

7‧‧‧Polarized light conversion elements

8‧‧‧ cone

9‧‧‧Zoom lens

10‧‧‧ micro-Fris eyepiece

11‧‧‧Condenser optical system

12‧‧‧Photomask

13‧‧‧ imaging optical system

14‧‧‧Polarization Measurement Department

20‧‧‧Control Department

21‧‧‧ Drive Department

M‧‧‧Photo Mask

PL‧‧‧Projection Optical System

W‧‧‧ wafer

M1, M2‧‧‧ curved mirror

Fig. 1 is a schematic view showing the configuration of an exposure apparatus according to an embodiment of the present invention.

Fig. 2 is a schematic view showing a configuration of a polarization conversion element of Fig. 1;

Fig. 3 is a diagram for explaining the optical rotation of the crystal.

4 is a schematic view of a ring-shaped secondary light source that is set to a polarization state in a peripheral direction by the action of a polarization conversion element.

Fig. 5 is a schematic view showing an internal configuration of a polarization measuring unit of Fig. 1;

Fig. 6 is a diagram for explaining the second verification example verified by the influence of the birefringence in the secondary distribution of the rotational symmetry related to the optical axis.

Fig. 7 is a diagram for explaining the second verification example verified by the influence of the birefringence in the primary distribution of the inclination of the linear change in one direction.

Fig. 8 is a view schematically showing a mode in which a force acting on the outside and a stress distribution generated in the light-transmitting member in the light-transmitting member in the prior art are exemplified.

Fig. 9 is a view schematically showing the force acting on the outside and the stress distribution generated in the light-transmitting member in the light-transmitting member in the present embodiment.

Fig. 10 is a schematic view showing a configuration of a holding member for supporting a light-transmitting member at three points on both sides in the embodiment.

Fig. 11 is a cross-sectional view showing a state in which a notched portion (processed portion) having a surface 62a orthogonal to the optical axis in the entire peripheral portion outside the effective region of the light transmitting member is formed.

Fig. 12 shows a pattern in which a notched portion (processed portion) having a surface 62a orthogonal to the optical axis in the entire peripheral portion outside the effective region of the light transmitting member is formed. An oblique view of the time.

Fig. 13 is a flow chart showing the processes of the method of manufacturing the illumination optical device to which the embodiment is applied.

Fig. 14 is a first view for explaining the evaluation procedure in the manufacturing method of the embodiment.

Fig. 15 is a second view for explaining the evaluation procedure in the manufacturing method of the embodiment.

Fig. 16 is a flow chart showing the processes of the method (adjustment method) for manufacturing the illumination optical device according to the embodiment.

Fig. 17 is a flowchart showing means for obtaining a semiconductor device for a micro device.

Fig. 18 is a flowchart showing means for obtaining a liquid crystal display device for a micro device.

1‧‧‧Light source

3‧‧‧Polarized state switching unit

3a‧‧1/4 wavelength plate

3b‧‧‧1/2 wavelength plate

4‧‧‧Diffractive optical elements (beam conversion elements)

5‧‧‧Focus-free lens

7‧‧‧Polarized light conversion elements

8‧‧‧ cone

9‧‧‧Zoom lens

10‧‧‧ micro-Fris eyepiece

11‧‧‧Condenser optical system

12‧‧‧Photomask

13‧‧‧ imaging optical system

14‧‧‧Polarization Measurement Department

20‧‧‧Control Department

21‧‧‧ Drive Department

M‧‧‧Photo Mask

PL‧‧‧Projection Optical System

W‧‧‧ wafer

M1, M2‧‧‧ curved mirror

Claims (60)

An illumination optical device that illuminates an illuminated surface according to light supplied from a light source and includes: a polarization setting unit disposed in an optical path between the light source and the illuminated surface to reach the illuminated The polarization state of the light on the surface is set to a predetermined polarization state, and a plurality of light transmission members are disposed in the optical path between the polarization setting portion and the illuminated surface, and the amount of birefringence of each of the light transmission members is It is 5 nm/cm or less, in which the influence of the complex refractive index caused by internal deflection in each light transmitting member is reduced by cancellation, and the respective rotation angle positions centered on the optical axis are different. The position of the plurality of light transmitting members is determined. The illumination optical device according to claim 1, wherein each of the plurality of light-transmitting members is held such that the amount of birefringence generated by external stress is 5 nm/cm or less. The illumination optical device according to claim 2, further comprising a curved mirror disposed in an optical path between the polarized light setting portion and the illuminated surface to bend the optical path; the reflective film of the curved mirror Forming a phase difference due to reflection between the light incident on the reflective film with P-polarized light and the light incident on the reflective film with S-polarized light, the phase difference being related to the light incident into the reflective film Within 15 degrees. An illumination optical device according to claim 1, wherein each of the plurality of light-transmitting members is held to be produced by external stress The amount of birefringence produced is below 5 nm/cm. The illumination optical device according to claim 1, further comprising a curved mirror disposed in an optical path between the polarization setting portion and the illuminated surface to bend the optical path; the reflective film of the curved mirror Forming a phase difference due to reflection between the light incident on the reflective film with P-polarized light and the light incident on the reflective film with S-polarized light, the phase difference being due to the light incident into the reflective film Within 15 degrees. The illumination optical device according to claim 1, further comprising a curved mirror disposed in an optical path between the polarization setting portion and the illuminated surface to bend the optical path; the reflective film of the curved mirror Forming a phase difference due to reflection between the light incident on the reflective film with P-polarized light and the light incident on the reflective film with S-polarized light, the phase difference being due to the light incident into the reflective film Within 15 degrees. The illumination optical device of claim 2, further comprising a curved mirror disposed in an optical path between the polarized light setting portion and the illuminated surface to bend the optical path; the reflective film of the curved mirror Forming a phase difference due to reflection between the light incident on the reflective film with P-polarized light and the light incident on the reflective film with S-polarized light, the phase difference being due to the light incident into the reflective film Within 15 degrees. An exposure apparatus comprising the illumination optical device according to any one of claims 1 to 7, wherein the illumination is mounted by the illumination The pattern of the illuminating illuminator is exposed on the photosensitive substrate. An exposure method characterized by using the illumination optical device according to any one of claims 1 to 7, wherein the pattern of the photomask is exposed on the photosensitive substrate. A method of manufacturing a micro-component, comprising: an exposure process using an illumination optical device according to any one of claims 1 to 7 to expose a pattern of the photomask on the photosensitive substrate; A developing process that develops the photosensitive substrate exposed by the exposure process. An illumination optical device that illuminates an illuminated surface according to light supplied from a light source and includes: a polarization setting unit disposed in an optical path between the light source and the illuminated surface to reach the illuminated surface The polarization state of the light is set to a predetermined polarization state; and the plurality of light transmission members disposed in the optical path between the polarization setting portion and the illuminated surface are respectively positioned at a desired rotation centering on the optical axis In the angular position, the influence of the birefringence caused by the internal deflection in each of the light-transmitting members is reduced by the cancellation, wherein the effect of the complex refractive index caused by the internal deflection in each of the light-transmitting members is utilized. The phase is reduced and the position of the plurality of light transmitting members is determined separately at a desired rotational angle position centering on the optical axis. The illumination optical device according to claim 11, wherein each of the plurality of light-transmitting members is held such that a birefringence by external stress is 5 nm/cm or less. The illumination optical device of claim 12, further comprising a curved mirror disposed in an optical path between the polarized light setting portion and the illuminated surface to bend the optical path; the reflective film of the curved mirror Forming a phase difference due to reflection between the light incident on the reflective film with P-polarized light and the light incident on the reflective film with S-polarized light, the phase difference being due to the light incident into the reflective film Within 15 degrees. The illumination optical device of claim 11, further comprising a curved mirror disposed in an optical path between the polarized light setting portion and the illuminated surface to bend the optical path; the reflective film of the curved mirror Forming a phase difference due to reflection between the light incident on the reflective film with P-polarized light and the light incident on the reflective film with S-polarized light, the phase difference being due to the light incident into the reflective film Within 15 degrees. An exposure apparatus comprising the illumination optical device according to any one of claims 11 to 14, wherein the pattern of the reticle illuminated by the illumination optical device is exposed on the photosensitive substrate. An exposure method characterized by using the illumination optical device according to any one of claims 11 to 14, wherein the pattern of the photomask is exposed on the photosensitive substrate. A manufacturing method of a micro-component, which uses the illumination optical device according to any one of claims 11 to 14, which is characterized by comprising: an exposure process which causes the pattern of the photomask to be on the photosensitive substrate Exposure; and A developing process that develops the photosensitive substrate exposed by the exposure process. An illumination optical device that illuminates an illuminated surface according to light supplied from a light source and includes: a polarization setting unit disposed in an optical path between the light source and the illuminated surface to reach the illuminated surface a polarization state of the light is set to a predetermined polarization state; and a curved mirror disposed in the optical path between the polarization setting portion and the illuminated surface to bend the optical path; wherein the curved mirror is in the reflective film Forming a phase difference due to reflection between the light incident on the reflective film with P-polarized light and the light incident on the reflective film with S-polarized light, the phase difference being related to the light incident into the reflective film Within 15 degrees, wherein the optical path between the polarized light setting portion and the illuminated surface further has a plurality of optical members, each optical member having a managed birefringence amount, wherein the optical members are internally deflected The effect of the complex refractive index is reduced by cancellation, and the positions of the plurality of optical members are individually determined at desired rotation angle positions centered on the optical axis. An exposure apparatus comprising the illumination optical device according to claim 18, wherein the pattern of the reticle illuminated by the illumination optical device is exposed on the photosensitive substrate. An exposure method characterized by using an illumination optical device according to claim 18, wherein the pattern of the photomask is exposed on the photosensitive substrate. A method of manufacturing a micro-component, comprising: an exposure process using an illumination optical device as described in claim 18, wherein the pattern of the photomask is exposed on the photosensitive substrate; and a developing process The photosensitive substrate exposed by the exposure process is developed. An illumination optical device that illuminates an illuminated surface according to light supplied from a light source and is characterized by: a polarization setting unit disposed in an optical path between the light source and the illuminated surface to be illuminated a polarization state of the light on the surface is set to a predetermined polarization state; and an optical system disposed in the optical path between the polarization setting portion and the illuminated surface to manage the amount of birefringence, wherein the optical system has the foregoing a plurality of optical members each having a managed amount of birefringence, wherein the effect of the complex refractive index caused by internal deflection in each optical member is reduced by cancellation, centered on the optical axis The positions of the plurality of optical members are individually determined in the required rotation angle positions. The illumination optical device according to claim 22, wherein the amount of birefringence generated by the internal deflection of the plurality of optical members is 5 nm/cm or less. The illumination optical device according to claim 23, wherein the plurality of optical members are held such that the amount of birefringence generated by external deflection is 5 nm/cm or less. An illumination optical device according to claim 22, wherein The amount of birefringence generated by internal deflection in the plurality of optical members described above is 5 nm/cm or less. The illumination optical device according to claim 22, wherein the plurality of optical members are held such that the amount of birefringence generated by external deflection is 5 nm/cm or less. The illumination optical device according to claim 22, wherein the plurality of optical members are held such that the amount of birefringence generated by external deflection is 5 nm/cm or less. The illumination optical device according to claim 25, wherein the plurality of optical members are held such that the amount of birefringence generated by external deflection is 5 nm/cm or less. An exposure apparatus comprising the illumination optical device according to any one of claims 22 to 28, wherein the pattern of the reticle illuminated by the illumination optical device is exposed on the photosensitive substrate. An exposure method characterized by using the illumination optical device according to any one of claims 22 to 28, wherein the pattern of the photomask is exposed on the photosensitive substrate. A method of manufacturing a micro-component, comprising: an exposure process, using an illumination optical device according to any one of claims 22 to 28, wherein the pattern of the photomask is exposed on the photosensitive substrate; And a developing process that develops the photosensitive substrate exposed by the exposure process. An illumination optical device that is responsive to light supplied by a light source The illumination surface is illuminated and characterized in that: a polarization setting unit disposed in an optical path between the light source and the illuminated surface, wherein a polarization state of the light on the illuminated surface is set to a predetermined polarization state; An optical system is disposed in an optical path between the polarization setting unit and the illuminated surface and maintains a polarization state of the light reaching the illuminated surface, so that a polarization state of the light on the illuminated surface is determined a polarized state in which the optical system has a plurality of optical members each having a managed amount of birefringence in which the effect of the complex refractive index caused by internal deflection in each optical member is reduced by cancellation, The positions of the plurality of optical members are individually determined in a desired rotational angle position centering on the optical axis. The illumination optical device according to claim 32, wherein the amount of birefringence generated by the internal deflection of the plurality of optical members is 5 nm/cm or less. The illumination optical device according to claim 33, wherein the plurality of optical members are held such that the amount of birefringence generated by external deflection is 5 nm/cm or less. The illumination optical device according to claim 32, wherein the plurality of optical members have an amount of birefringence generated by internal deflection of 5 nm/cm or less. The illumination optical device according to claim 32, wherein the plurality of optical members are held such that the amount of birefringence generated by external deflection is 5 nm/cm or less. The illumination optical device according to claim 32, wherein the plurality of optical members are held such that the amount of birefringence generated by external deflection is 5 nm/cm or less. The illumination optical device according to claim 35, wherein the plurality of optical members are held such that the amount of birefringence generated by external deflection is 5 nm/cm or less. An exposure apparatus comprising the illumination optical device according to any one of claims 32 to 38, wherein the pattern of the reticle illuminated by the illumination optical device is exposed on the photosensitive substrate. An exposure method characterized by using the illumination optical device according to any one of claims 32 to 38, wherein the pattern of the photomask is exposed on the photosensitive substrate. A method of manufacturing a micro-component, comprising: an exposure process, using an illumination optical device according to any one of claims 32 to 38, wherein a pattern of the photomask is exposed on the photosensitive substrate; And a developing process that develops the photosensitive substrate exposed by the exposure process. A manufacturing method of an illumination optical device, comprising: a plurality of light transmitting members, characterized by comprising the following processes: a bulk material preparation process, preparing a bulk material to form each of a plurality of optical members; a measuring process for measuring a birefringence amount of each of the prepared blocks; a calculation process of collecting at least one part of the illumination optical device The measurement information of each of the plurality of light-transmitting members in the measurement process, and the appropriate combination of the plurality of light-transmitting members constituting at least a part of the illumination optical device that can accommodate the influence of the birefringence is selected. Calculating a set position of each light transmitting member caused by an appropriate combination of the plurality of light transmitting members; processing the plurality of blocks to form each light transmitting member; and assembling the process according to the result of the calculating process And a plurality of light-transmitting members processed in the process are assembled into predetermined respective set positions, wherein the influence of the complex refractive index caused by internal deflection in each of the light-transmitting members is eliminated by The position of the plurality of light transmitting members is determined individually at a desired rotation angle position centering on the optical axis. The method of manufacturing an illumination optical device according to claim 42, wherein the calculation process includes an optimization process that is based on the collected information and is configured to be used in at least a portion of the illumination optical device. In order to reduce the influence of the birefringence of each light-transmitting member to an allowable range, the rotation angle position centering on the optical axis of each light-transmitting member is calculated and optimized, and a combination of a plurality of light-transmitting members constituting at least a part of the illumination optical device obtained by the optimization, and a rotational angle position of each light-transmitting member when the most suitable combination of the plurality of light-transmitting members is obtained; The assembly process includes a grouping process that causes a plurality of light-transmitting members that have been processed during processing based on information of the optimized rotational angular position. Set to the specified rotation angle position. The method of fabricating an illumination optical device according to claim 43 wherein the optimization process comprises an alternative process for optimizing a plurality of light transmissive members constituting at least a portion of the illumination optics When the obtained combination is obtained, the measurement information of the block related to at least one of the light-transmitting members in the combination of the plurality of light-transmitting members constituting at least a part of the illumination optical device is replaced with the measurement in the other block. News. The method for manufacturing an illumination optical device according to claim 44, further comprising a bulk material selection process, wherein after the measurement process, a block having a birefringence amount of 5 nm/cm or less is selected; the calculation process includes a a determination process for selecting measurement information for each of the blocks associated with the plurality of light-transmitting members constituting at least a portion of the illumination optical device, based on the selected measurement information in the bulk selection process, and selecting allowable birefringence The influence of the plurality of light-transmitting members of at least a part of the illumination optical device constitutes a set position of each light-transmitting member caused by an appropriate combination of the plurality of light-transmitting members. The method for manufacturing an illumination optical device according to claim 42, further comprising a block picking process, which selects a block having a birefringence amount of 5 nm/cm or less after the measuring process; the calculating process includes a a determination process for selecting measurement information for each of the blocks associated with the plurality of light-transmitting members constituting at least a portion of the illumination optical device, based on the selected measurement information in the bulk selection process, and selecting allowable birefringence A suitable combination of a plurality of light transmissive members constituting at least a portion of the illumination optics to determine the plurality of light transmissions The set position of each light transmitting member caused by an appropriate combination of members. The method for manufacturing an illumination optical device according to claim 43, further comprising a bulk material selection process, wherein after the measurement process, a block having a birefringence amount of 5 nm/cm or less is selected; the calculation process includes a a determination process for selecting measurement information for each of the blocks associated with the plurality of light-transmitting members constituting at least a portion of the illumination optical device, based on the selected measurement information in the bulk selection process, and selecting allowable birefringence The influence of the plurality of light-transmitting members of at least a part of the illumination optical device constitutes a set position of each light-transmitting member caused by an appropriate combination of the plurality of light-transmitting members. An illuminating optical device manufactured by the manufacturing method according to any one of claims 42 to 47, wherein the pattern of the reticle illuminated by the illuminating optical device is photosensitive Exposure on the substrate. An exposure method comprising the illumination optical device manufactured by the manufacturing method according to any one of claims 42 to 47, wherein the pattern of the photomask is exposed on the photosensitive substrate. A method of manufacturing a micro-component, comprising: an exposure process using an illumination optical device manufactured by the manufacturing method according to any one of claims 42 to 47, wherein the pattern of the photomask is photosensitive Exposure on the substrate; and a developing process that develops the photosensitive substrate exposed by the exposure process. Method for adjusting illumination optical device, illumination optical system thereof The polarization setting unit sets the polarization state of the light on the illuminated surface to a predetermined polarization state, and the adjustment method includes the following processes: an acquisition process for acquiring the polarization setting unit and the illuminated surface Information relating to at least a portion of the optical system to be disposed in the optical path; and a management process for managing the amount of birefringence of the optical system disposed in the optical path between the polarized light setting portion and the illuminated surface Wherein the management process manages the amount of birefringence occurring by the internal deflection of the plurality of optical members of the optical system, wherein the internal deflection is used in the process of managing the amount of birefringence caused by the internal deflection An optical member having an amount of birefringence of 5 nm/cm or less which is obliquely formed as the plurality of optical members described above, wherein the management process adjusts a rotationally asymmetric birefringence distribution of the optical axis remaining in the interior of the optical system, wherein adjustment The process of birefringence, in order to reduce the effect of the complex refractive index caused by internal deflection in each optical member by cancellation, centering on the optical axis Desired rotational angle position of the respective determined positions of the plurality of optical members. The method of adjusting an illumination optical device according to claim 51, wherein the management process manages a birefringence amount caused by an externally applied deflection of the optical system. The method of adjusting an illumination optical device according to claim 52, wherein the process of managing the amount of birefringence caused by the deflection applied from the outside comprises a holding process that maintains the optical system The optical member has a plurality of optical members such that the amount of birefringence generated by the deflection applied from the outside is 5 nm/cm or less. The method of adjusting an illumination optical device according to claim 51, wherein the management process adjusts a rotationally asymmetric birefringence distribution to an optical axis remaining in the interior of the optical system. The method of adjusting an illumination optical device according to claim 51, wherein the management process manages a birefringence amount caused by an externally applied deflection of the optical system. The method of adjusting an illumination optical device according to claim 51, wherein the management process adjusts a rotationally asymmetric birefringence distribution to an optical axis remaining in the interior of the optical system. A method of adjusting an illumination optical device, wherein a polarization setting unit of the illumination optical device sets a polarization state of light on an illuminated surface to a predetermined polarization state, and the adjustment method of the illumination optical device includes the following processes: Obtaining a process for acquiring information relating to at least a portion of an optical system to be disposed in an optical path between the polarized light setting unit and the illuminated surface; maintaining a process of maintaining the polarized light setting portion to the illuminated surface The polarization characteristic in the optical path between the two is such that the polarization state of the light reaching the illuminated surface is a predetermined polarization state via the optical system, wherein the sustaining process is internally biased to the plurality of optical members of the optical system. The amount of birefringence occurring in the oblique direction is managed, wherein the amount of birefringence generated by the internal deflection is less than 5 nm/cm in the process of managing the amount of birefringence caused by the internal deflection As a plurality of optical members described above, wherein the maintaining process adjusts a rotationally asymmetric birefringent distribution to an optical axis remaining in the interior of the optical system, wherein a process of adjusting the amount of birefringence, wherein the optical components are The influence of the complex refractive index caused by the internal deflection is reduced by the cancellation, and the positions of the plurality of optical members are individually determined in the required rotational angular position centering on the optical axis. The method for adjusting an illumination optical device according to claim 57, further comprising a management process for managing the amount of birefringence caused by the deflection applied from the outside of the optical system. The method of adjusting an illumination optical device according to claim 58, wherein the management process for managing the amount of birefringence caused by external deflection includes a holding process that maintains the optical system The plurality of optical members have a birefringence amount of 5 nm/cm or less which is caused by deflection applied from the outside. The method of adjusting an illumination optical device according to claim 57, wherein the maintaining process adjusts a rotationally asymmetric birefringent distribution of the optical axis remaining in the interior of the optical system.