TWI432707B - Ultraviolet sensing display device - Google Patents

Description

Ultraviolet light sensing display device

The present invention relates to an ultraviolet light sensing display device.

In recent years, due to the prevalence of leisure, people from all over the world have competed to go out to engage in leisure activities to maintain their health. And, with the rapid development of technology, you can use portable display devices to handle things when you are engaged in outdoor activities. However, the environmental pollution causes the ozone layer to rupture, so that the harmful ultraviolet light of the human body can be driven straight in, which is easy to cause skin lesions. Therefore, it is increasingly important to be able to remind people that the ultraviolet light intensity sensing device for sun protection preparation is sufficient.

The main object of the present invention is to provide an ultraviolet light sensing display device for sensing the intensity of ultraviolet light of a certain amount of exposure.

To achieve the above objective, the present invention provides an ultraviolet light sensing display device disposed on a substrate for detecting an ultraviolet light. The ultraviolet light sensing display device comprises a first switching transistor, a first photosensitive transistor, a first capacitor, a first light emitting diode, a second switching transistor, a second photosensitive transistor, and a first Two capacitors and a second light emitting diode. The first switching transistor has a first source, a first drain and a first gate. The first photosensitive transistor has a second source, a second drain and a second gate, and the second gate is electrically connected to the first drain. The first capacitor is electrically connected between the first drain and the second source. The first light emitting diode has a first anode and a first cathode and is used to generate a light of a first color. The first anode is electrically connected to the second drain, and the first cathode and the second source are electrically connected to a first voltage source and a second voltage source, respectively. The second switching transistor has a third source, a third drain and a third gate. The second photosensitive transistor has a fourth source, a fourth drain and a fourth gate, and the fourth gate is electrically connected to the third drain. When the ultraviolet light continuously illuminates the first photosensitive transistor and the second photosensitive transistor, the first photosensitive transistor opens faster than the second photosensitive transistor. The second capacitor is electrically connected between the third drain and the fourth source. The second light emitting diode has a second anode and a second cathode and is configured to generate a light of a second color different from the first color. The second anode is electrically connected to the fourth drain, and the second cathode and the fourth source are electrically connected to the first voltage source and the second voltage source, respectively.

In order to achieve the above object, the present invention further provides an ultraviolet light sensing display device including a first switching transistor, a first photosensitive transistor, a driving transistor, a first capacitor, and a first LED. a second switching transistor, a second photosensitive transistor, a second capacitor, and a second LED. The first switching transistor has a first source, a first drain and a first gate, and the first photosensitive transistor has a second source, a second drain and a second gate. The driving transistor has a seventh source, a seventh drain and a seventh gate, and the seventh gate is electrically connected to the first drain, and the second source is electrically connected to the seventh drain. The first capacitor is electrically connected between the first drain and the seventh source. The first light emitting diode has a first anode and a first cathode and is used to generate a light of a first color. The first anode is electrically connected to the seventh drain, and the first cathode and the second source are electrically connected to a first voltage source and a second voltage source, respectively. The second switching transistor has a third source, a third drain and a third gate. The second photosensitive transistor has a fourth source, a fourth drain and a fourth gate, and the fourth gate is electrically connected to the third drain. The second capacitor is electrically connected between the third drain and the fourth source. The second light emitting diode has a second anode and a second cathode and is configured to generate a light of a second color different from the first color. The second anode is electrically connected to the fourth drain, and the second cathode and the fourth source are electrically connected to the first voltage source and the second voltage source, respectively.

In summary, the present invention utilizes a photosensitive transistor having different opening speeds under ultraviolet light to control the switch of the light emitting diode, so that the ultraviolet light sensing display device displays different colors to determine the ultraviolet light irradiation. the amount.

Please refer to FIG. 1. FIG. 1 is a schematic diagram of an ultraviolet light sensing display device according to a first preferred embodiment of the present invention. As shown in FIG. 1 , the ultraviolet light sensing display device 100 is disposed on a substrate 102 and can be used to detect an ultraviolet light. The substrate 102 may be any substrate for fabricating a thin film transistor, such as a germanium substrate, a glass substrate, or a plastic substrate, but is not limited thereto. The ultraviolet light sensing display unit 1001 includes a first ultraviolet light sensing display unit 1041 and a second ultraviolet light sensing display unit 1042. The first ultraviolet light sensing display unit 1041 includes a first switching transistor 1061. a first photosensitive transistor 1081, a first capacitor 1101, and a first light emitting diode 1121, and the second ultraviolet light sensing display unit 1042 includes a second switching transistor 1062 and a second photosensitive transistor 1082. a second capacitor 1102 and a second LED 1122. In the first ultraviolet light sensing display unit 1041, the first switching transistor 1061 has a first source 1061a, a first drain 1061b, and a first gate 1061c, and the first photosensitive transistor 1081 has a first Two sources 1081a, a second drain 1081b, and a second gate 1081c. The second gate 1081c of the first photosensitive transistor 1081 is electrically connected to the first drain 1061b of the first switching transistor 1061, and the first capacitor 1101 is electrically connected to the first drain of the first switching transistor 1061. 1061b is between the second source 1081a of the first photosensitive transistor 1081. The first LED 1121a has a first anode 1121a and a first cathode 1121b, and the first anode 1121a is electrically connected to the second drain 1081b of the first photosensitive transistor 1081, and the first cathode 1121b is electrically connected. Connected to a first voltage source 114. Then, the second source 1081a of the first photosensitive transistor 1081 is electrically connected to a second voltage source 116. The first voltage source 114 of the embodiment is grounded, and the second voltage source 116 is a positive voltage source, but the invention is not limited thereto.

The first gate 1061c of the first switching transistor 1061 is electrically connected to a scan line 118, and the first source 1061a of the first switch transistor 1061 is electrically connected to a data line 120. When the scan line 118 transmits an enable signal to the first gate 1061c of the first switch transistor 1061, the first switch transistor 1061 can be turned on, so that the data line 120 is from the first source 1061a of the first switch transistor 1061. A display signal is transmitted to the second gate 1081c of the first photosensitive transistor 1081. It should be noted that the first photosensitive transistor 1081 of the embodiment needs to have a certain amount of ultraviolet light to be illuminated when the second gate 1081c receives a display signal. Therefore, when the ultraviolet light continuously illuminates the first photosensitive transistor 1081, the first photosensitive transistor 1081 is turned on. The first voltage source 114 connected to the second source 1081a can provide a positive current through the first opened The photo transistor 1081 is driven to drive the first light emitting diode 1121. Thereby, the first light emitting diode 1121 can be used to generate a light of a first color. The first color of the embodiment is green, but is not limited thereto, and the first color of the present invention may be various other colors.

In addition, the second switching transistor 1062 has a third source 1062a, a third drain 1062b and a third gate 1062c, and the second photosensitive transistor 1082 has a fourth source 1082a and a fourth drain. 1082b and a fourth gate 1082c. The fourth gate 1082c of the second photosensitive transistor 1082 is electrically connected to the third drain 1062b of the second switching transistor 1062, and the second capacitor 1102 is electrically connected to the third drain 1062b of the second switching transistor 1062. Between the fourth source 1082a of the second photosensitive transistor 1082. Moreover, the second LED 1122 has a second anode 1122a and a second cathode 1122b, and can be used to generate a light of a second color different from the first color. The second color of this embodiment is red, but is not limited thereto. The second anode 1122a is electrically connected to the fourth drain 1082b of the second photosensitive transistor 1082, and the second cathode 1122b and the fourth source 1082a of the second photosensitive transistor 1082 are electrically connected to the first voltage source 114, respectively. And a second voltage source 116. In the present embodiment, the third gate 1062c of the second switching transistor 1062 is electrically connected to the first gate 1061c of the first switching transistor 1061 to the same scanning line 118, and the second switching transistor 1062 is The third source 1062a is electrically connected to the first source 1061 of the first switching transistor 1061 to the same data line 120.

It should be noted that when the ultraviolet light continuously illuminates the first photosensitive transistor 1081 and the second photosensitive transistor 1082, the first photosensitive transistor 1081 is lower than the second photosensitive transistor. 1082 is about to be turned on. Therefore, when the ultraviolet light starts to illuminate the ultraviolet light sensing display device 100, the first ultraviolet light sensing display unit 1041 displays green. The second ultraviolet light sensing display unit 1042 displays red as the ultraviolet light irradiation time is longer or the irradiation intensity is stronger, so that the color displayed by the ultraviolet light sensing display device 100 changes from green to green and red. . Thereby, the user can judge that the irradiation amount of the ultraviolet light is increased by the color change of the ultraviolet light sensing display device 100, and even reaches a dangerous state.

In this embodiment, the ultraviolet light sensing display device 100 further includes a third ultraviolet light sensing display unit 1043, and the third ultraviolet light sensing display unit 1043 includes a third switching transistor 1063 and a third photosensitive transistor. 1083. The third capacitor 1103 and the third LED 1123. The third switching transistor 1063 has a fifth source 1063a, a fifth drain 1063b and a fifth gate 1063c, and the third photosensitive transistor 1083 has a sixth source 1083a and a sixth drain 1083b. A sixth gate 1083c. The sixth gate 1083c is electrically connected to the fifth drain 1063b, and the third capacitor 1103 is electrically connected between the fifth drain 1063b and the sixth source 1083a. The third LED 1123 has a third anode 1123a and a third cathode 1123b, and is configured to generate a light of a third color different from the first color and the second color. The third color of this embodiment is blue, but is not limited thereto. The third anode 1123a is electrically connected to the sixth drain 1083b, and the third cathode 1123b and the sixth source 1083a are electrically connected to the first voltage source 114 and the second voltage source 116, respectively. The fifth gate 1063c is electrically connected to the first gate 1061c and the third gate 1062c to the same scan line 118, and the fifth source 1063a is electrically connected to the first source 1061a and the third source 1062a. Connected to the same data line 120. It is worth noting that when the ultraviolet light continuously illuminates the first photosensitive transistor 1081, When the two photosensitive transistors 1082 and the third photosensitive transistor 1083 are opened, the first photosensitive transistor 1081 and the second photosensitive transistor 1082 are turned on faster than the third photosensitive transistor 1083, so that the first ultraviolet light sensing display unit 1041 The two ultraviolet light sensing display unit 1042 and the third ultraviolet light sensing display unit 1043 can be turned on under different ultraviolet light irradiation amounts, respectively. Thereby, the green, red, and blue colors respectively displayed by the first ultraviolet light sensing display unit 1041, the second ultraviolet light sensing display unit 1042, and the third ultraviolet light sensing display unit 1043 can respectively represent different ultraviolet light. The state of the amount of exposure. The user can determine the different dangerous states represented by the different amounts of ultraviolet light irradiation by the color change displayed by the ultraviolet light sensing display device 100.

It can be seen from the above that the first photosensitive transistor 1081, the second photosensitive transistor 1082 and the third photosensitive transistor 1083 of the present embodiment are sequentially turned on as the exposure time or the irradiation amount of the ultraviolet light is increased, so that the ultraviolet light is applied. The light sensing display device 100 can sequentially display light of different colors to determine the amount of ultraviolet light to be irradiated. Moreover, the first photosensitive transistor 1081 is turned on faster than the second photosensitive transistor 1082, and the second photosensitive transistor 1082 is turned on faster than the third photosensitive transistor 1083, so the first photosensitive transistor 1081 and the second sense The difference in structure of the photo-crystal 1082 is the same as the structural difference between the second photo-sensing transistor 1082 and the third photo-sensing transistor 1083. In order to clearly explain the difference relationship between the first photosensitive transistor 1081 and the second photosensitive transistor 1082 and the difference relationship between the second photosensitive transistor 1082 and the third photosensitive transistor 1083, the first photosensitive transistor 1081 and the second sense will be hereinafter described. The structure of the photo-crystal 1082 is further illustrated by way of example. Please refer to FIG. 2, which is a cross-sectional structural view of the first photosensitive transistor and the first LED in the first preferred embodiment of the present invention. As shown in FIG. 2, the first photosensitive transistor 1081 of the present embodiment is disposed on the substrate 102, and the first photosensitive transistor 1081 includes a first gate electrode layer 1221, an insulating layer 124, and a first drain. The electrode layer 1261, a first source electrode layer 1281, and a first oxide semiconductor layer 1301. The first gate electrode layer 1221 is disposed on the substrate 102 and serves as a second gate 1081c. The insulating layer 124 covers the first gate electrode layer 1221 and the substrate 102, and the insulating layer 124 on the first gate electrode layer 1221 can serve as a gate insulating layer of the first photosensitive transistor 1081. The first drain electrode layer 1261 is provided on the insulating layer 124 and serves as the second drain 1081b. The first source electrode layer 1281 is disposed on the insulating layer 124 and serves as the second source 1081a. Further, the first source electrode layer 1281 partially overlaps the first gate electrode layer 1221, and the first gate electrode layer 1261 does not overlap the first gate electrode layer 1221. The first oxide semiconductor layer 1301 of the present embodiment covers the insulating layer 124 between the first drain electrode layer 1261 and the first source electrode layer 1281 and extends to the first drain electrode layer 1261 and the first source. On the electrode layer 1281. The first oxide semiconductor layer 1301 between the first drain electrode layer 1261 and the first source electrode layer 1281 has a first channel region 1321 and a first resistance region 1341, and the first channel region 1321 is first. The oxide semiconductor layer 1301 has a channel resistance, and the first oxide semiconductor layer 1301 of the first resistance region 1341 has a first resistance. The channel resistance and the first resistor are connected in series between the first drain electrode layer 1261 and the first source electrode layer 1281. The first channel region 1321 is a portion of the first oxide semiconductor layer 1301 overlapping the first gate electrode layer 1221, and the first resistance region 1341 is the first oxide semiconductor layer 1301 and the first gate electrode layer 1221. Another part of the overlap. And, a first resistor having a first region 1341 located between the first length L ₁ layer 1261 and the drain electrode of the first source electrode layer 1281, and the first length L ₁ of the present embodiment may be between 0.1 micrometer to approximate Between 1000 microns, but not limited to this. It is to be noted that the first oxide semiconductor layer 1301 of the present embodiment has a characteristic of being sensitive to ultraviolet light, that is, when the lower surface of the first oxide semiconductor layer 1301 which is not overlapped with the first gate electrode layer 1221 is subjected to After the ultraviolet light is irradiated, the concentration of the carrier in the first oxide semiconductor layer 1301 of the first resistance region 1341 is increased, so that the resistance value of the first oxide semiconductor layer 1301 of the irradiated first resistance region 1341 is lowered. The resistance value of the first resistor is ignored. Also, as the volume of the first oxide semiconductor layer 1301 of the first resistance region 1341 is larger, the rate of decrease in the resistance value of the first resistor is slower. The material of the first oxide semiconductor layer 1301 may be indium gallium zinc oxide, indium oxide, zinc oxide or gallium oxide, but is not limited thereto.

In order to clearly explain the relationship between the change of the resistance value of the first resistor and the ultraviolet light irradiation time, please refer to FIG. 3, which is the second drain current of the first photosensitive transistor according to the invention, which changes with the ultraviolet illumination time. A voltage relationship diagram between the second gate and the second source. As shown in FIG. 3, the first curve C ₁ , the second curve C ₂ , the third curve C ₃ , the fourth curve C ₄ , the fifth curve C ₅ , the sixth curve C ₆ , the seventh curve C ₇ , the first The eight curve C ₈ , the ninth curve C ₉ and the tenth curve C ₁₀ sequentially represent that the first photosensitive transistor 1081 is subjected to ultraviolet light irradiation from low to high, and the first curve C ₁ to the tenth curve C _{10 are} The drain currents at the same voltage are sequentially increased. Therefore, as the amount of ultraviolet light irradiation increases, the resistance value between the second drain 1081b of the first photosensitive transistor 1081 and the second source 1081a gradually decreases, and starts to conduct.

In addition, please continue to refer to FIG. 2, the ultraviolet light sensing display device 100 further includes a guarantee The cover layer 136 covers the first photosensitive transistor 1081 and exposes the first drain electrode layer 1261. The first light emitting diode 1121 is disposed on the protective layer 136 and includes an anode electrode layer 138, a cathode electrode layer 140, and a light emitting layer 142. The anode electrode layer 138 is disposed on the protective layer 136 and serves as the first anode 1121a of the first light emitting diode 1121. Moreover, the anode electrode layer 138 is in contact with the exposed first gate electrode layer 1261 to be electrically connected to the second drain electrode 1081b, and the anode electrode layer 138 completely covers the first photosensitive transistor 1081 to shield the first The oxide semiconductor layer 1301 protects the upper surface of the first oxide semiconductor layer 1301 from ultraviolet light. The anode electrode layer 138 may be composed of a metal conductive material such as aluminum, magnesium aluminum alloy, or the like. Further, the cathode electrode layer 140 is provided on the anode electrode layer 138 and serves as the first cathode 1121b of the first light-emitting diode 1121. The cathode electrode layer 140 may be composed of a transparent conductive material such as indium zinc oxide or indium tin oxide. In addition, the light emitting layer 142 is disposed between the anode electrode layer 138 and the cathode electrode layer 140, and the light emitting layer 142 may be composed of an organic light emitting material. Therefore, the first light-emitting diode 1121 can be an organic light-emitting diode. However, the present invention is not limited thereto. The light-emitting layer 142 can also be a semiconductor material, so that the first light-emitting diode 1121 is an inorganic light-emitting diode. Polar body.

Please refer to FIG. 4 , which is a cross-sectional structural view of a second photosensitive transistor and a second LED according to a first preferred embodiment of the present invention. As shown in FIG. 4, the second photosensitive transistor 1082 includes a second gate electrode layer 1222, a second drain electrode layer 1262, a second source electrode layer 1282, and a second oxide semiconductor layer 1302. The second gate electrode layer 1222 is disposed on the same substrate 102 as the first gate electrode layer 1221 and serves as a fourth gate 1082c. Moreover, the insulating layer 124 covers the second gate electrode layer 1222 and the substrate 102. The second drain electrode layer 1262 is disposed on the insulating layer 124 and serves as the fourth drain 1082b. The second source electrode layer 1282 is disposed on the insulating layer 124 and serves as a fourth source 1082a. The second oxide semiconductor layer 1302 is disposed on the insulating layer 124 between the second drain electrode layer 1262 and the second source electrode layer 1282, and is located on the second drain electrode layer 1262 and the second source electrode layer 1282. The second oxide semiconductor layer 1302 has a second channel region 1322 overlapping a portion of the second gate electrode layer 1222 and a second resistance region 1342 of another portion not overlapping the second gate electrode layer 1222. . The second resistance region 1342 has a second length L ₂ between the second drain electrode layer 1262 and the second source electrode layer 1282, and the second length L _{2 is} greater than the first length L ₁ . The second light-emitting diode 1122 is disposed on the second photosensitive transistor 1082 such that the anode electrode layer 138 of the second light-emitting diode 1122 completely covers the second photosensitive transistor 1082 to shield the second oxide semiconductor layer 1302. Therefore, the upper surface of the second oxide semiconductor layer 1302 is not irradiated with ultraviolet light, but affects the operation of the second photosensitive transistor 1082. In addition, the first light-emitting diode 1121, the second light-emitting diode 1122, and the third light-emitting diode 1123 of the present embodiment have the same structure, and thus will not be described again. In the present embodiment, the second oxide semiconductor layer 1302 and the first oxide semiconductor layer 1301 are made of the same material and have the same width and height. It can be seen that the difference between the second photosensitive transistor 1082 and the first photosensitive transistor 1081 is that the length of the first resistive region 1341 between the first drain electrode layer 1261 and the first source electrode layer 1281 is smaller than the second. The resistance region 1342 is located between the second gate electrode layer 1262 and the second source electrode layer 1282, such that the second oxide semiconductor layer 1302 of the second resistive region 1342 that is not shielded by the second gate electrode layer 1222 has a volume. It is larger than the volume of the first oxide semiconductor layer 1301 of the first resistance region 1341. Therefore, compared with the first resistance region 1341, the second resistance region 1342 requires a large amount of ultraviolet light irradiation to reduce the resistance value to the same resistance value as the first resistance region 1341, so that under the continuous illumination of the ultraviolet light, the first The photosensitive transistor 1081 is turned on faster than the second photosensitive transistor 1082.

Similarly, the structure of the third photosensitive transistor 1083 of the present embodiment is similar to that of the first photosensitive transistor 1081 and the second photosensitive transistor 1082, except that the third resistive region of the third photosensitive transistor 1083 has a The third length, and the length of the third length is greater than the first length and the second length, so that the first photosensitive transistor and the second photosensitive transistor are turned on faster than the third photosensitive transistor. Therefore, the structure of the third photosensitive transistor 1083 will not be described again herein. However, the first photosensitive transistor 1081, the second photosensitive transistor 1082 and the third photosensitive transistor 1083 of the present invention have different opening speeds and are not limited by the first resistance region 1341, the second resistance region 1342 and the third resistance region. Determining the length, the present invention can also determine the first photosensitive transistor 1081, the second photosensitive transistor 1082, and the third by adjusting the width and height of the first resistance region 1341, the second resistance region 1342, and the third resistance region. The opening speed of the photosensitive transistor 1083. In addition, the first oxide semiconductor layer 1301 of the first photosensitive transistor 1081 of the present invention may also completely overlap the first gate electrode layer 1221 without the first resistance region 1341, so that the first ultraviolet light sensing display unit 1041 still produces green light when it is not exposed to ultraviolet light.

In addition, the first switching transistor 1061, the second switching transistor 1062 and the third switching transistor 1063 of the embodiment have the same crystal structure for controlling the first photosensitive transistor 1081 and the second photosensitive device, respectively. The switch of the crystal 1082 and the third photosensitive transistor 1083. Therefore, in order to clearly illustrate the first switching transistor 1061, the second switching transistor The transistor structure of the body 1062 and the third switching transistor 1063 will be described below by taking the first switching transistor 1061 as an example. Please refer to FIG. 5. FIG. 5 is a cross-sectional structural diagram of a first switching transistor according to a first preferred embodiment of the present invention. As shown in FIG. 5, the first switching transistor 1061 includes a third gate electrode layer 143, a third drain electrode layer 144, a third source electrode layer 146, and a third oxide semiconductor layer 148. The third gate electrode layer 143 is disposed on the substrate 102 and serves as the first gate 1061c. The insulating layer 124 covers the third gate electrode layer 143 and the substrate 102. The third drain electrode layer 144 is disposed on the insulating layer 124 and serves as the first drain 1061b. The third source electrode layer 146 is disposed on the insulating layer 124 and serves as the first source 1061a. The third oxide semiconductor layer 148 is disposed on the insulating layer 124 between the third drain electrode layer 144 and the third source electrode layer 146 and between the third source electrode layer 146 and the third drain electrode layer 144. The third oxide semiconductor layer 148 is completely overlapped with the third gate electrode layer 143, so that the third oxide semiconductor layer 148 between the third source electrode layer 146 and the third drain electrode layer 144 is used as the first switch. The channel region of the transistor 1061. In the present embodiment, the material of the third oxide semiconductor layer 148 is the same as that of the first oxide semiconductor layer 1301, but is not limited thereto.

It can be seen that the ultraviolet light sensing display device of the embodiment uses the same switching transistor to control the photosensitive transistors having different opening speeds, and electrically connects the photosensitive cells with different opening speeds to the light emitting diodes respectively. As a driving transistor for the light-emitting diode, it can display different colors under different ultraviolet light irradiation amounts.

In addition, the photosensitive transistor of the embodiment is not limited to the structure of the above-mentioned photosensitive transistor, Moreover, since the difference between the first photosensitive transistor, the second photosensitive transistor, and the third photosensitive transistor is only in the length of the resistance region, the first photosensitive transistor will be exemplified below. Please refer to FIG. 6 and FIG. 7 , FIG. 6 is another embodiment of the first photosensitive transistor according to the first preferred embodiment of the present invention, and FIG. 7 is the first embodiment of the first preferred embodiment of the present invention. Another embodiment of the photosensitive transistor. As shown in FIG. 6, the first photosensitive transistor 1081 of the present embodiment further includes an etch stop layer 150 overlying the first oxide semiconductor layer 1301, and is stopped by etching, as compared with the first photosensitive transistor. The layer 150 is a mask for forming the first oxide semiconductor layer 1301, so the etch stop layer 150 is aligned with the first oxide semiconductor layer 1301. The etch stop layer 150 of the present embodiment may include tantalum nitride, but is not limited thereto. As shown in FIG. 7, the first gate electrode layer 1261 and the first source electrode layer 1281 of the first photosensitive transistor 1081 of the present embodiment extend to the first oxidation, respectively, compared to the first photosensitive transistor. On the semiconductor layer 1301, the first photosensitive transistor 1081 further includes an etch stop layer 150 overlying the first oxide semiconductor layer 1301. Also, a portion of the etch stop layer 150 is located between the first drain electrode layer 1261 and the first oxide semiconductor layer 1301 and between the first source electrode layer 1281 and the first oxide semiconductor layer 1301.

The ultraviolet light sensing display unit of the present invention is not limited to the above embodiment. Other embodiments or variations of the present invention will continue to be disclosed hereinafter, and the switching electro-ecological system of the following embodiment has the same structure as the switching transistor of the first embodiment. Further, the photosensitive transistor of the following embodiment has the same structure as that of the photosensitive transistor of the first embodiment, and may be the photosensitive transistor structure of the other embodiments described above. In order to simplify the description and highlight the differences between the various embodiments or variations, the same reference numerals are used to designate the same elements, and The repetitive part will not be repeated.

Please refer to Figure 8, and refer to Figure 2, Figure 4 and Figure 5 together. Figure 8 is a schematic view of an ultraviolet light sensing display device according to a second preferred embodiment of the present invention. As shown in FIG. 8, the ultraviolet light sensing display device 200 of the present embodiment includes only the first ultraviolet light sensing display unit 1041 and the second ultraviolet light sensing display unit 1042, but not the first embodiment. A third ultraviolet light sensing display unit is included. Moreover, the first ultraviolet light sensing display unit 1041 further includes a driving transistor 202, and the circuit connection manner of the first ultraviolet light sensing display unit 1041 is different from the first ultraviolet light sensing display unit of the first embodiment. In the first ultraviolet light sensing display unit 1041 of the embodiment, the driving transistor 202 has a seventh source 202a, a seventh drain 202b and a seventh gate 202c, and the seventh drain 202b is electrically Connected to the second source 202a, and the seventh gate 202c is electrically connected to the first drain 1061b. The first capacitor 1101 is electrically connected between the first drain 1061b and the seventh source 202a, and the first anode 1121a is electrically connected to the seventh drain 202b, and the first cathode 1121b and the second source 1081a are respectively The first voltage source 114 and the second voltage source 116 are electrically connected. The second gate 1081c of the first photosensitive transistor 1081 is electrically connected to the first drain 1061b of the first switching transistor 1061. Moreover, the circuit connection manner of the second ultraviolet light sensing unit 1042 is the same as that of the second ultraviolet light sensing unit of the first embodiment, and thus will not be described herein. In addition, as shown in FIG. 5, the driving transistor 202 of the present embodiment is used to control the switch of the first LED 2121, and has no ultraviolet light sensing function, but may be the first one of the first embodiment. The switching transistor 1061 has the same structure, but is not limited thereto. In addition, as shown in FIG. 2 and FIG. 4, the second photosensitive transistor 1082 of the second ultraviolet light sensing display unit 1042 of the present embodiment has the same structure as the first photosensitive transistor 1081, and thus the first resistive region The length between the first drain electrode layer 1261 and the first source electrode layer 1281 is approximately the same as the length of the second resistive region 1342 between the second drain electrode layer 1262 and the second source electrode layer 1282, that is, The first length L _{1 is the} same as the second length L ₂ . When the ultraviolet light is not irradiated to the ultraviolet light sensing display device 200 of the embodiment, the scan line 118 transmits an open signal to the first gate 1061c of the first switch transistor 1061, so that the first switch transistor 1061 can be turned on. The data line 120 transmits a display signal from the first source 1061a of the first switching transistor 1061 to the seventh gate 202c of the driving transistor 202, so that the driving transistor is turned on. Therefore, the second voltage source 116 can drive the first light emitting diode 1121 through the driving transistor 202 to generate light of the first color. When the ultraviolet light continuously illuminates the ultraviolet light sensing display device 200 of the present embodiment, the first photosensitive transistor 1081 and the second photosensitive transistor 1082 are simultaneously turned on with the continuous irradiation of the ultraviolet light. When the first photosensitive transistor 1081 of the first ultraviolet light sensing unit 1041 is turned on, the current originally used to drive the first light emitting transistor 1121 is guided to the first photosensitive transistor 1081 being turned on, thus the first The light-emitting transistor 1121 can no longer generate light of the first color. Meanwhile, when the second photosensitive transistor 1082 of the second ultraviolet light sensing unit 1042 is turned on, the second voltage source 116 can drive the second light emitting diode 1122 through the second photosensitive transistor 1082 to make the second light emitting diode 2 The polar body 1122 can generate light of a second color. Therefore, when the ultraviolet light is irradiated to the ultraviolet light sensing display device 200, the light displayed by the ultraviolet light sensing display device 200 is converted from the first color to the second color, whereby the user can use the color of the light. The conversion is performed to judge that ultraviolet light having a certain amount of irradiation is irradiated onto the ultraviolet light sensing display device 200.

Please refer to FIG. 9. FIG. 9 is a schematic diagram of an ultraviolet light sensing display device according to a third preferred embodiment of the present invention. As shown in FIG. 9, the second gate 1081c of the first photosensitive transistor 1081 of the ultraviolet light sensing display device 300 of the present embodiment is electrically connected to a switch line 302. Whether or not the first photosensitive transistor 1081 is turned on can be selected by the switch line 302. When the switch line 302 is turned on, the first ultraviolet light sensing display unit 1041 of the embodiment operates in the same manner as the first ultraviolet light sensing display unit of the second embodiment. When the switch line 302 is turned off, the first ultraviolet light sensing display unit 1041 of the embodiment generates light of the first color when it is not irradiated with ultraviolet light. When the ultraviolet light is further irradiated on the ultraviolet light sensing display device 300 of the embodiment, the second ultraviolet light sensing display unit 1042 is turned on to generate the light of the second color, and the ultraviolet light sensing display device 300 A light mixed with a first color and a second color is displayed. Therefore, the user can judge that the ultraviolet light having a certain irradiation amount is irradiated on the ultraviolet light sensing display device 300 by the color conversion of the light.

In summary, the present invention utilizes an oxide semiconductor layer having a characteristic of lowering the resistance value by irradiation with ultraviolet light, and designing the oxide semiconductor layer of the photosensitive transistor to be completely shielded from the gate electrode layer to form an oxide semiconductor layer. Can be divided into channel area and resistance area. Thereby, the ultraviolet light sensing display unit can sense the irradiation of the ultraviolet light by the resistance drop of the resistance region. Moreover, the ultraviolet light sensing display device of the present invention can determine the ultraviolet light by combining an ultraviolet light sensing display unit having different resistance region sizes or by combining ultraviolet light sensing display units of different circuit connection modes. The amount of exposure.

The above description is only a preferred embodiment of the present invention, and the patent application scope according to the present invention Equivalent changes and modifications made are intended to be within the scope of the present invention.

100‧‧‧UV light sensing display device

102‧‧‧Substrate

1041‧‧‧First ultraviolet light sensing display unit

1042‧‧‧Second ultraviolet light sensing display unit

1043‧‧‧ Third ultraviolet light sensing display unit

1061‧‧‧First switch transistor

1061a‧‧‧first source

1061b‧‧‧First bungee

1061c‧‧‧first gate

1062‧‧‧Second switch transistor

1062a‧‧‧ third source

1062b‧‧‧third bungee

1062c‧‧‧third gate

1063‧‧‧ Third switch transistor

1063a‧‧‧ fifth source

1063b‧‧‧ fifth bungee

1063c‧‧‧ fifth gate

1081‧‧‧First Photoelectric Crystal

1081a‧‧‧Second source

1081b‧‧‧second bungee

1081c‧‧‧second gate

1082‧‧‧Second Photoelectric Crystal

1082a‧‧‧ fourth source

1082b‧‧‧4th bungee

1082c‧‧‧fourth gate

1083‧‧‧ Third Photoelectric Crystal

1083a‧‧‧ sixth source

1083b‧‧‧ sixth bungee

1083c‧‧‧ sixth gate

1101‧‧‧first capacitor

1102‧‧‧second capacitor

1103‧‧‧ third capacitor

1121‧‧‧First Light Emitting Diode

1121a‧‧‧First anode

1121b‧‧‧first cathode

1122‧‧‧Second light-emitting diode

1122a‧‧‧Second anode

1122b‧‧‧second cathode

1123‧‧‧3rd LED

1123a‧‧‧3rd anode

1123b‧‧‧third cathode

114‧‧‧First voltage source

116‧‧‧second voltage source

118‧‧‧ scan line

120‧‧‧Information line

1221‧‧‧First gate electrode layer

1222‧‧‧second gate electrode layer

124‧‧‧Insulation

1261‧‧‧First pole electrode layer

1262‧‧‧Second electrode electrode layer

1281‧‧‧First source electrode layer

1282‧‧‧Second source electrode layer

1301‧‧‧First oxide semiconductor layer

1302‧‧‧Second oxide semiconductor layer

1321‧‧‧First Passage Area

1322‧‧‧Second passage area

1341‧‧‧First resistance zone

1342‧‧‧second resistance zone

136‧‧‧protection layer

138‧‧‧anode electrode layer

140‧‧‧Cathode electrode layer

142‧‧‧Lighting layer

143‧‧‧third gate electrode layer

144‧‧‧ third electrode layer

146‧‧‧ Third source electrode layer

148‧‧‧ Third oxide semiconductor layer

150‧‧‧etch stop layer

200‧‧‧UV light sensing display device

202‧‧‧Drive transistor

202a‧‧‧ seventh source

202b‧‧‧ seventh bungee

202c‧‧‧ seventh gate

300‧‧‧UV light sensing display device

302‧‧‧ switch line

1 is a schematic view of an ultraviolet light sensing display device according to a first preferred embodiment of the present invention.

2 is a schematic cross-sectional view showing a first photosensitive transistor and a first light emitting diode according to a first preferred embodiment of the present invention.

Figure 3 is a graph showing the relationship between the second drain current and the voltage between the second gate and the second source as a function of the ultraviolet light illumination time of the first photosensitive transistor of the present invention.

4 is a schematic cross-sectional view showing a second photosensitive transistor and a second light emitting diode according to a first preferred embodiment of the present invention.

Figure 5 is a cross-sectional view showing the structure of a first switching transistor of the first preferred embodiment of the present invention.

Figure 6 is another embodiment of the first photosensitive transistor of the first preferred embodiment of the present invention.

Figure 7 is a view showing still another embodiment of the first photosensitive transistor of the first preferred embodiment of the present invention.

Figure 8 is a schematic view of an ultraviolet light sensing display device according to a second preferred embodiment of the present invention.

Figure 9 is a schematic view of an ultraviolet light sensing display device according to a third preferred embodiment of the present invention.

100. . . Ultraviolet light sensing display device

102. . . Substrate

1041. . . First ultraviolet light sensing display unit

1042. . . Second ultraviolet light sensing display unit

1043. . . Third ultraviolet light sensing display unit

1061. . . First switching transistor

1061a. . . First source

1061b. . . First bungee

1061c. . . First gate

1062. . . Second switching transistor

1062a. . . Third source

1062b. . . Third bungee

1062c. . . Third gate

1063. . . Third switching transistor

1063a. . . Fifth source

1063b. . . Fifth bungee

1063c. . . Fifth gate

1081. . . First photosensitive transistor

1081a. . . Second source

1081b. . . Second bungee

1081c. . . Second gate

1082. . . Second photosensitive transistor

1082a. . . Fourth source

1082b. . . Fourth bungee

1082c. . . Fourth gate

1083. . . Third photosensitive transistor

1083a. . . Sixth source

1083b. . . Sixth bungee

1083c. . . Sixth gate

1101. . . First capacitor

1102. . . Second capacitor

1103. . . Third capacitor

1121. . . First light emitting diode

1121a. . . First anode

1121b. . . First cathode

1122. . . Second light emitting diode

1122a. . . Second anode

1122b. . . Second cathode

1123. . . Third light emitting diode

1123a. . . Third anode

1123b. . . Third cathode

114. . . First voltage source

116. . . Second voltage source

118. . . Scanning line

120. . . Data line

Claims (24)

An ultraviolet light sensing display device is disposed on a substrate for detecting an ultraviolet light, the ultraviolet light sensing display device comprising: a first switching transistor having a first source and a first drain And a first gate; a first photosensitive transistor having a second source, a second drain and a second gate, and the second gate is electrically connected to the first drain; a first capacitor electrically connected between the first drain and the second source; a first LED having a first anode and a first cathode and configured to generate a first color Light, wherein the first anode is electrically connected to the second drain, and the first cathode and the second source are electrically connected to a first voltage source and a second voltage source respectively; a crystal having a third source, a third drain and a third gate; a second photosensitive transistor having a fourth source, a fourth drain and a fourth gate, and the first The fourth gate is electrically connected to the third drain, wherein the ultraviolet light continuously illuminates the first photosensitive transistor and the second photosensitive transistor The first photosensitive transistor is turned on faster than the second photosensitive transistor; a second capacitor is electrically connected between the third drain and the fourth source; and a second LED has a second anode and a second cathode, and configured to generate a light of a second color different from the first color, wherein the second anode is electrically connected to the fourth drain, and the second cathode The fourth source is electrically connected to the first voltage source and the second voltage source, respectively. The ultraviolet light sensing display device of claim 1, further comprising: a third switching transistor having a fifth source, a fifth drain and a fifth gate; and a third photosensitive transistor having a sixth source, a sixth drain and a sixth gate a third gate electrically connected to the fifth drain; a third capacitor electrically connected between the fifth drain and the sixth source; and a third light emitting diode, Having a third anode and a third cathode, and for generating a light of a third color different from the first color and the second color, wherein the third anode is electrically connected to the sixth drain, and The third cathode and the sixth source are electrically connected to the first voltage source and the second voltage source, respectively. The ultraviolet light sensing display device of claim 2, wherein when the ultraviolet light continuously illuminates the first photosensitive transistor, the second photosensitive transistor, and the third photosensitive transistor, the first photosensitive transistor and The second photosensitive transistor is turned on faster than the third photosensitive transistor. The ultraviolet light sensing display device of claim 1, wherein the first gate of the first switching transistor and the third gate of the second switching transistor are electrically connected to a scan line. The ultraviolet light sensing display device of claim 1, wherein the first source of the first switching transistor and the third source of the second switching transistor are electrically connected to a data line. The ultraviolet light sensing display device of claim 1, wherein the first photosensitive transistor package The first gate electrode layer is disposed on the substrate and serves as the second gate; an insulating layer covers the first gate electrode layer and the substrate; and a first drain electrode layer, Provided on the insulating layer, and as the second drain; a first source electrode layer is disposed on the insulating layer and serves as the second source; and a first oxide semiconductor layer is disposed on the The insulating layer between the first drain electrode layer and the first source electrode layer, and the first oxide semiconductor layer has a first channel region and a first resistance region, wherein the first channel region is the first The oxide semiconductor layer overlaps the first gate electrode layer, and the first resistance region is another portion of the first oxide semiconductor layer that does not overlap the first gate electrode layer. The ultraviolet light sensing display device of claim 6, wherein the second photosensitive transistor comprises: a second gate electrode layer disposed on the substrate and serving as the fourth gate, wherein the insulating layer covers On the second gate electrode layer and the substrate; a second drain electrode layer is disposed on the insulating layer and serves as the fourth drain; a second source electrode layer is disposed on the insulating layer And as the fourth source; and a second oxide semiconductor layer disposed on the insulating layer between the second drain electrode layer and the second source electrode layer, and the second oxide semiconductor layer has a second channel region overlapping a portion of the second gate electrode layer and a second resistor region of another portion not overlapping the second gate electrode layer, wherein the first resistor region is located at the first drain region Length between the electrode layer and the first source electrode layer The length of the second resistive region is less than the length between the second drain electrode layer and the second source electrode layer, so that the first photosensitive transistor opens faster than the second phototransistor. The ultraviolet light sensing display device of claim 6, wherein the first oxide semiconductor layer extends onto the first drain electrode layer and the first source electrode layer. The ultraviolet light sensing display device of claim 8, wherein the first photosensitive transistor further comprises an etch stop layer overlying the first oxide semiconductor layer. The ultraviolet light sensing display device of claim 6, wherein the first drain electrode layer and the first source electrode layer respectively extend onto the first oxide semiconductor layer, and the first photosensitive transistor further An etch stop layer is included overlying the first oxide semiconductor layer. The ultraviolet light sensing display device of claim 6, further comprising a protective layer covering the first photosensitive transistor and exposing the first drain electrode layer, wherein the first light emitting diode comprises An anode electrode layer disposed on the protective layer and shielding the first oxide semiconductor layer; a cathode electrode layer disposed on the anode electrode layer; and a light emitting layer disposed on the anode electrode layer and the cathode Between the electrode layers. The ultraviolet light sensing display device of claim 6, wherein the first switch transistor The body includes: a third gate electrode layer disposed on the substrate as the first gate, wherein the insulating layer covers the third gate electrode layer and the substrate; a third drain electrode layer, Provided on the insulating layer as the first drain; a third source electrode layer disposed on the insulating layer as the first source; and a third oxide semiconductor layer disposed on the third The insulating layer between the drain electrode layer and the third source electrode layer, and the third oxide semiconductor layer completely overlaps the third gate electrode layer. An ultraviolet light sensing display device is disposed on a substrate, and the ultraviolet light sensing display device comprises: a first switching transistor having a first source, a first drain and a first gate; a first photosensitive transistor having a second source, a second drain and a second gate; a driving transistor having a seventh source, a seventh drain and a seventh gate, The seventh gate is electrically connected to the first drain, and the second source is electrically connected to the seventh drain; a first capacitor is electrically connected to the first drain and the seventh a first light emitting diode having a first anode and a first cathode for generating a light of a first color, wherein the first anode is electrically connected to the seventh drain, The first cathode and the second source are respectively electrically connected to a first voltage source and a second voltage source; a second switching transistor has a third source, a third drain and a first a third photoresist; a second photosensitive transistor having a fourth source, a fourth drain and a fourth gate a second gate electrically connected to the third drain; a second capacitor electrically connected between the third drain and the fourth source; and a second light emitting diode, Having a second anode and a second cathode, and for generating a light of a second color different from the first color, wherein the second anode is electrically connected to the fourth drain, and the second cathode is The fourth source is electrically connected to the first voltage source and the second voltage source, respectively. The ultraviolet light sensing display device of claim 13, wherein the second gate of the first photosensitive transistor is electrically connected to the first drain of the first switching transistor. The ultraviolet light sensing display device of claim 13, wherein the second gate of the first photosensitive transistor is electrically connected to a switching line. The ultraviolet light sensing display device of claim 13, wherein the first gate of the first switching transistor and the third gate of the second switching transistor are electrically connected to a scan line. The ultraviolet light sensing display device of claim 13, wherein the first source of the first switching transistor and the third source of the second switching transistor are electrically connected to a data line. The ultraviolet light sensing display device of claim 13, wherein the first photosensitive transistor comprises: a first gate electrode layer is disposed on the substrate and serves as the second gate; an insulating layer covers the first gate electrode layer and the substrate; and a first drain electrode layer is disposed on the substrate On the insulating layer, as the second drain; a first source electrode layer is disposed on the insulating layer and serves as the second source; and a first oxide semiconductor layer is disposed on the first On the insulating layer between the drain electrode layer and the first source electrode layer, and the first oxide semiconductor layer has a first channel region overlapping the first gate electrode layer and an unconnected first gate region The first resistance region in which the electrode layers overlap. The ultraviolet light sensing display device of claim 18, wherein the second photosensitive transistor comprises: a second gate electrode layer disposed on the substrate and serving as the fourth gate, wherein the insulating layer covers On the second gate electrode layer and the substrate; a second drain electrode layer is disposed on the insulating layer and serves as the fourth drain; a second source electrode layer is disposed on the insulating layer And as the fourth source; and a second oxide semiconductor layer disposed on the insulating layer between the second drain electrode layer and the second source electrode layer, and the second oxide semiconductor layer has a second channel region overlapping the second gate electrode layer and a second resistance region not overlapping the first gate electrode layer, wherein the first resistance region is located at the first drain electrode layer and the first The length between one source electrode layer is approximately the same as the length of the second resistance region between the second drain electrode layer and the second source electrode layer. The ultraviolet light sensing display device of claim 18, wherein the first oxide half The conductor layer extends onto the first drain electrode layer and the first source electrode layer. The ultraviolet light sensing display device of claim 18, wherein the first photosensitive transistor further comprises an etch stop layer overlying the first oxide semiconductor layer. The ultraviolet light sensing display device of claim 18, wherein the first drain electrode layer and the first source electrode layer respectively extend onto the first oxide semiconductor layer, and the first photo transistor further An etch stop layer is included overlying the first oxide semiconductor layer. The ultraviolet light sensing display device of claim 18, wherein the first switching transistor and the second switching transistor respectively comprise: a third gate electrode layer disposed on the substrate, wherein the insulating layer covers On the third gate electrode layer and the substrate; a third drain electrode layer disposed on the insulating layer; a third source electrode layer disposed on the insulating layer; and a third oxide semiconductor The layer is disposed on the insulating layer between the third drain electrode layer and the third source electrode layer, and the third oxide semiconductor layer completely overlaps the third gate electrode layer. The ultraviolet light sensing display device of claim 18, further comprising a protective layer covering the first photosensitive transistor and exposing the first drain electrode layer, wherein the first light emitting diode comprises : An anode electrode layer disposed on the protective layer and shielding the first oxide semiconductor layer; a cathode electrode layer disposed on the anode electrode layer; and a light emitting layer disposed on the anode electrode layer and the cathode electrode Between the layers.