TWI430427B - Stacked chip set, package with stacked chip set and preparation method thereof - Google Patents
Stacked chip set, package with stacked chip set and preparation method thereof Download PDFInfo
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Description
本發明係有關於一種封裝件及其製法,尤指一種具堆疊晶片組之封裝件及其製法。The present invention relates to a package and a method of manufacturing the same, and more particularly to a package having a stacked chip set and a method of fabricating the same.
目前電子產品均需具高電性效率、高電性功能、及輕薄短小等特性,為因應電子產品功能整合的趨勢,故業界積極開發將多個晶片堆疊整合於同一封裝件內之技術,以符合前述之產品特性。該晶片堆疊技術包括:晶片對晶片(Chip to Chip)、晶片對晶圓(Chip to Wafer)及晶圓對晶圓(Wafer to Wafer)等,而各種方式中,各元件(晶片或晶圓)之間的間隙均需填充膠材,以保護用以電性連接各元件之導電凸塊,使填充後的晶片模組可接於電子元件(如:封裝基板、主機板等)上。At present, electronic products are required to have high-electricity efficiency, high-power function, lightness and shortness. In response to the trend of functional integration of electronic products, the industry actively develops technologies for integrating multiple wafer stacks into the same package. Meet the aforementioned product characteristics. The wafer stacking technology includes: Chip to Chip, Chip to Wafer, Wafer to Wafer, etc., and in various ways, each component (wafer or wafer) The gap between the gaps needs to be filled with a rubber material to protect the conductive bumps for electrically connecting the components, so that the filled wafer module can be connected to electronic components (such as a package substrate, a motherboard, etc.).
請參閱第1A及1B圖,係為目前業界用以填充膠材之主要技術。如第1A圖所示,係利用Flip Chip in Flex(FCF)之方式形成堆疊晶片組,即先於一晶圓上貼附一層黏膠膜,經切單製程後,於該經切單之晶片10的黏膠膜11上,將另一晶片12貼附於該黏膠膜11上。然,若需堆疊多層晶片,則每一層均需貼附該黏膠膜11,導致製程時間冗長。Please refer to Figures 1A and 1B for the main technology used in the industry to fill the adhesive. As shown in FIG. 1A, a stacked chip set is formed by using Flip Chip in Flex (FCF), that is, a layer of adhesive film is attached to a wafer, and after being singulated, the wafer is diced. On the adhesive film 11 of 10, another wafer 12 is attached to the adhesive film 11. However, if a multi-layer wafer is to be stacked, the adhesive film 11 needs to be attached to each layer, resulting in a long process time.
再者,如第1B圖所示,係利用No-flow Underfill(NUF)之點膠方式形成堆疊晶片組,即先於一晶片10’上塗點膠材11’,再疊合另一晶片12於該膠材11’上。然,該點膠方式之膠量不易控制,導致當疊合另一晶片12之後,會有溢膠之問題,且若需堆疊多層晶片,則每一層均需點膠,導致製程時間冗長;又面對高腳數之需求,各導電凸塊100之間距將縮減至40μm以下,導致發生點膠作業困難、作業時間增加且良率降低等問題。Furthermore, as shown in FIG. 1B, a stacked wafer set is formed by using a No-flow Underfill (NUF) dispensing method, that is, a glue 11' is coated on a wafer 10', and another wafer 12 is laminated. The glue is on 11'. However, the amount of glue in the dispensing method is not easy to control, resulting in a problem of overflowing after laminating another wafer 12, and if multiple layers of wafers are to be stacked, each layer needs to be dispensed, resulting in a lengthy process time; In the face of the high number of pins, the distance between the conductive bumps 100 will be reduced to less than 40 μm, resulting in problems such as difficulty in dispensing, increased working time, and reduced yield.
另外,亦可利用Wafer Level Underfill(WLUF)之方式形成堆疊晶片組,即先於一晶圓上以旋塗方式形成半固化之黏膠膜,經切單製程後,再將另一晶片結合於該黏膠膜上。然,形成該黏膠膜不僅製程複雜、時間冗長,且以旋塗方式製作該黏膠膜,將於該晶圓邊緣發生溢膠之問題,而影響產品外觀、可靠度、及污染機台等問題,而且若需堆疊多層晶片,則每一層均需旋塗半固化之黏膠膜,導致製程時間冗長。In addition, a stacked wafer set can also be formed by using Wafer Level Underfill (WLUF), that is, a semi-cured adhesive film is formed by spin coating on a wafer, and after the single-cut process, another wafer is bonded to On the adhesive film. However, the formation of the adhesive film is not only complicated in process, but also cumbersome in time, and the adhesive film is formed by spin coating, which may cause problems of overflowing at the edge of the wafer, thereby affecting product appearance, reliability, and contamination of the machine. The problem, and if a multi-layer wafer is to be stacked, each layer needs to be spin-coated with a semi-cured adhesive film, resulting in a lengthy process.
因此,如何提供一種堆疊晶片之製法,能避免前述習知技術之種種缺失,實為一重要課題。Therefore, how to provide a method for stacking wafers can avoid various shortcomings of the prior art, which is an important issue.
本發明提供一種具堆疊晶片組之封裝件,係包括:封裝基板;堆疊晶片組,係設置且電性連接於該封裝基板上,該堆疊晶片組具有第一晶片及疊接在該第一晶片上之至少一第二晶片,以令該第一晶片電性連接該第二晶片,且該堆疊晶片組係以該第二晶片設置於該封裝基板上,又該第一晶片之厚度大於該第二晶片之厚度;以及第一膠材,係設於該第一晶片與該第二晶片之間的間隙、及各該第二晶片之間的間隙。The present invention provides a package having a stacked wafer set, comprising: a package substrate; a stacked wafer set, disposed and electrically connected to the package substrate, the stacked wafer set having a first wafer and being laminated on the first wafer At least one second wafer is electrically connected to the second wafer, and the stacked wafer is disposed on the package substrate by the second wafer, and the thickness of the first wafer is greater than the first a thickness of the two wafers; and a first adhesive material disposed between the gap between the first wafer and the second wafer and a gap between each of the second wafers.
前述之封裝件中,該第一晶片係藉由導電凸塊電性連接該第二晶片,且各該第二晶片係藉由導電凸塊相互電性連接,又該第二晶片係藉由導電凸塊電性連接該封裝基板。另外,該第一晶片、第二晶片及第一膠材三者側表面齊平。In the above package, the first wafer is electrically connected to the second wafer by conductive bumps, and each of the second wafers is electrically connected to each other by conductive bumps, and the second wafer is electrically conductive. The bump is electrically connected to the package substrate. In addition, the side surfaces of the first wafer, the second wafer, and the first adhesive are flush.
前述之封裝件復包括第二膠材,係設於該封裝基板與該第二晶片之間。The foregoing package further includes a second adhesive material disposed between the package substrate and the second wafer.
本發明另提供一種堆疊晶片組,係包括:第一晶片;第二晶片,係設於該第一晶片上,且該第一晶片電性連接該第二晶片,又該第一晶片之厚度大於該第二晶片之厚度;以及第一膠材,係設於該第一晶片與該第二晶片之間的間隙。The present invention further provides a stacked wafer set, comprising: a first wafer; a second wafer is disposed on the first wafer, and the first wafer is electrically connected to the second wafer, and the thickness of the first wafer is greater than a thickness of the second wafer; and a first adhesive material disposed between the first wafer and the second wafer.
前述之堆疊晶片組中,該第一晶片係藉由導電凸塊電性連接該第二晶片。In the foregoing stacked wafer set, the first wafer is electrically connected to the second wafer by conductive bumps.
前述之堆疊晶片組中,係具有複數個第二晶片,且相互疊設。該第一膠材復設於各該第二晶片之間的間隙。各該第二晶片係藉由導電凸塊相互電性連接。In the foregoing stacked wafer set, there are a plurality of second wafers stacked one on another. The first adhesive material is disposed in a gap between each of the second wafers. Each of the second wafers is electrically connected to each other by conductive bumps.
前述之堆疊晶片組中,該第一晶片、第二晶片及第一膠材三者側表面齊平。In the foregoing stacked wafer set, the side surfaces of the first wafer, the second wafer and the first adhesive are flush.
本發明復提供一種具堆疊晶片組之封裝件之製法,係包括:提供一堆疊晶片組,該堆疊晶片組具有第一晶片及設於該第一晶片上且疊接在該第一晶片上之至少一第二晶片,以令該第一晶片電性連接該第二晶片;提供一裝有第一膠材之容器,將該堆疊晶片組置入該容器之第一膠材中,令該第一膠材流入該第一晶片與該第二晶片之間的間隙、及各該第二晶片之間的間隙;將該堆疊晶片組移出該容器;移除該堆疊晶片組之側面上的第一膠材;固化該第一膠材;以及將該堆疊晶片組設置且電性連接於封裝基板上。The invention provides a method for manufacturing a package with a stacked wafer set, comprising: providing a stacked wafer set having a first wafer and disposed on the first wafer and laminated on the first wafer At least one second wafer for electrically connecting the first wafer to the second wafer; providing a container containing the first adhesive material, and placing the stacked wafer assembly into the first adhesive material of the container a glue material flows into a gap between the first wafer and the second wafer, and a gap between each of the second wafers; moving the stacked wafer group out of the container; removing the first side on the side of the stacked wafer group a glue; curing the first glue; and arranging and electrically connecting the stacked wafer set to the package substrate.
前述之製法中,該第一晶片之厚度大於該第二晶片之厚度,且該第一晶片係藉由導電凸塊電性連接該第二晶片,各該第二晶片係藉由導電凸塊相互電性連接。In the above method, the thickness of the first wafer is greater than the thickness of the second wafer, and the first wafer is electrically connected to the second wafer by conductive bumps, each of the second wafers being electrically conductive with each other Electrical connection.
前述之製法中,該堆疊晶片組係藉由導電凸塊電性連接該封裝基板,且該些導電凸塊係設於該第二晶片上。依該製法,復包括於固化該第一膠材之前,先移除該第二晶片上包覆用於電性連接該封裝基板之導電凸塊的第一膠材,以露出該些導電凸塊。又包括當該堆疊晶片組設於該封裝基板上之後,形成第二膠材於該封裝基板與該第二晶片之間。In the above method, the stacked wafer set is electrically connected to the package substrate by conductive bumps, and the conductive bumps are disposed on the second wafer. According to the method, before the curing of the first adhesive, the first adhesive covering the conductive bumps for electrically connecting the package substrate is removed to expose the conductive bumps. . The method further includes forming a second glue between the package substrate and the second wafer after the stacked wafer is disposed on the package substrate.
另外,前述之製法中,係藉由切割方式以移除該堆疊晶片組之側面之第一膠材,使該第一晶片、第二晶片及第一膠材三者側表面齊平。In addition, in the above method, the first adhesive material of the side of the stacked wafer set is removed by cutting, so that the first wafer, the second wafer and the first adhesive material are flush with each other.
由上可知,本發明具堆疊晶片組之封裝件及其製法係藉由將該堆疊晶片組浸於第一膠材中,使該第一膠材流入每一層晶片之間,再移除該堆疊晶片組外部多餘之第一膠材,故相較於習知技術,本發明不需逐層形成膠材,因而有效簡化製程及縮短製程時間,且藉由移除多餘之第一膠材,可維持產品外觀、提升產品可靠度、及避免污染機台。It can be seen from the above that the package with the stacked chip set of the present invention and the manufacturing method thereof are obtained by immersing the stacked wafer set in the first glue material, causing the first glue material to flow between each layer of the wafer, and then removing the stack. Compared with the prior art, the present invention does not need to form a glue layer layer by layer, thereby simplifying the process and shortening the process time, and by removing the excess first glue, Maintain product appearance, improve product reliability, and avoid contamination of the machine.
以下藉由特定的具體實施例說明本發明之實施方式,熟悉此技藝之人士可由本說明書所揭示之內容輕易地瞭解本發明之其他優點及功效。The other embodiments of the present invention will be readily understood by those skilled in the art from this disclosure.
須知,本說明書所附圖式所繪示之結構、比例、大小等,均僅用以配合說明書所揭示之內容,以供熟悉此技藝之人士之瞭解與閱讀,並非用以限定本發明可實施之限定條件,故不具技術上之實質意義,任何結構之修飾、比例關係之改變或大小之調整,在不影響本發明所能產生之功效及所能達成之目的下,均應仍落在本發明所揭示之技術內容得能涵蓋之範圍內。同時,本說明書中所引用之如“上”、“下”、“一”及“二”等之用語,亦僅為便於敘述之明瞭,而非用以限定本發明可實施之範圍,其相對關係之改變或調整,在無實質變更技術內容下,當亦視為本發明可實施之範疇。It is to be understood that the structure, the proportions, the size, and the like of the present invention are intended to be used in conjunction with the disclosure of the specification, and are not intended to limit the invention. The conditions are limited, so it is not technically meaningful. Any modification of the structure, change of the proportional relationship or adjustment of the size should remain in this book without affecting the effects and the objectives that can be achieved by the present invention. The technical content disclosed in the invention can be covered. In the meantime, the terms "upper", "lower", "one" and "two" are used in the description, and are not intended to limit the scope of the invention. Changes or adjustments to a relationship are considered to be within the scope of the invention, without departing from the scope of the invention.
請參閱第2A至2E圖,係為本發明揭露之一種具堆疊晶片組之封裝件之製法。Please refer to FIGS. 2A to 2E , which are a method for fabricating a package with a stacked chip set according to the present invention.
如第2A圖所示,提供一堆疊晶片組2,該堆疊晶片組2具有一第一晶片21及疊接在該第一晶片21上之兩第二晶片22(以兩個第二晶片為例),且該第一晶片21係藉由導電凸塊20a電性連接該第二晶片22,而各該第二晶片22亦藉由導電凸塊20b相互電性連接,以令該第一晶片21電性連接該第二晶片22。於本實施例中,最下方之第二晶片22之外露側亦設有導電凸塊20c,且該第一晶片21之厚度t大於單一個第二晶片22之厚度h,以利於該第一晶片21作為承載該第二晶片22之用。As shown in FIG. 2A, a stacked wafer set 2 is provided. The stacked wafer set 2 has a first wafer 21 and two second wafers 22 stacked on the first wafer 21 (taking two second wafers as an example). And the first wafer 21 is electrically connected to the second wafer 22 by the conductive bumps 20a, and each of the second wafers 22 is electrically connected to each other by the conductive bumps 20b to make the first wafer 21 The second wafer 22 is electrically connected. In this embodiment, the exposed side of the lowermost second wafer 22 is also provided with a conductive bump 20c, and the thickness t of the first wafer 21 is greater than the thickness h of the single second wafer 22 to facilitate the first wafer. 21 is used for carrying the second wafer 22.
如第2B圖所示,提供一裝有第一膠材30之容器3,藉由真空吸嘴(圖式中未表示)吸附該堆疊晶片組2之第一晶片21之非作動面,將該堆疊晶片組2浸入該容器3之第一膠材30中,令該第一膠材30流入該第一晶片21與該第二晶片22之間的間隙、及各該第二晶片22之間的間隙,以包覆該些導電凸塊20a,20b,20c。As shown in FIG. 2B, a container 3 having a first adhesive material 30 is provided, and a non-actuating surface of the first wafer 21 of the stacked wafer set 2 is adsorbed by a vacuum nozzle (not shown). The stacked wafer set 2 is immersed in the first glue 30 of the container 3, so that the first glue 30 flows into the gap between the first wafer 21 and the second wafer 22, and between the second wafers 22 a gap to cover the conductive bumps 20a, 20b, 20c.
如第2C圖所示,將該堆疊晶片組2移出該容器3,且透過例如延預定切割線S切割移除該堆疊晶片組2之側部2a之方式,以移除該堆疊晶片組2之側面上的第一膠材30a,使該第一晶片21、第二晶片22及第一膠材30三者側表面齊平。再藉由電漿方式(plasma),移除最下方之第二晶片22外側(即設有該些導電凸塊20c之一側)的第一膠材30b,以外露出該些導電凸塊20c。接著,移除該真空吸嘴。As shown in FIG. 2C, the stacked wafer group 2 is removed from the container 3, and the side portion 2a of the stacked wafer group 2 is removed by, for example, cutting a predetermined cutting line S to remove the stacked wafer group 2. The first adhesive material 30a on the side surface makes the first wafer 21, the second wafer 22 and the first adhesive material 30 have a side surface flush. Then, the first adhesive material 30b on the outer side of the lowermost second wafer 22 (that is, one side of the conductive bumps 20c) is removed by plasma, and the conductive bumps 20c are exposed. Next, the vacuum nozzle is removed.
如第2D圖所示,固化該剩餘之第一膠材30,以固定該第一晶片21及兩第二晶片22。As shown in FIG. 2D, the remaining first glue 30 is cured to fix the first wafer 21 and the two second wafers 22.
因此,本發明提供一種堆疊晶片組2,係包括:第一晶片21;第二晶片22,係設於該第一晶片21上,且該第一晶片21電性連接該第二晶片22,又該第一晶片21之厚度t大於該第二晶片22之厚度h;以及第一膠材30,係設於該第一晶片21與該第二晶片22之間的間隙。Therefore, the present invention provides a stacked wafer set 2, comprising: a first wafer 21; a second wafer 22 is disposed on the first wafer 21, and the first wafer 21 is electrically connected to the second wafer 22, The thickness t of the first wafer 21 is greater than the thickness h of the second wafer 22; and the first adhesive 30 is disposed between the first wafer 21 and the second wafer 22.
所述之第一晶片21係藉由導電凸塊20a電性連接該第二晶片22。The first wafer 21 is electrically connected to the second wafer 22 by the conductive bumps 20a.
所述之第二晶片22具有複數個,且相互疊設,使該第一膠材30復設於各該第二晶片22之間的間隙,且各該第二晶片22係藉由導電凸塊20b相互電性連接。The second wafer 22 has a plurality of electrodes stacked on each other such that the first adhesive material 30 is disposed in a gap between the second wafers 22, and each of the second wafers 22 is formed by conductive bumps. 20b is electrically connected to each other.
所述之第一膠材30、第一晶片21及第二晶片22三者側表面齊平。The side surfaces of the first adhesive material 30, the first wafer 21 and the second wafer 22 are flush.
如第2E圖所示,將該堆疊晶片組2設於一封裝基板4上,且該堆疊晶片組2係藉由最下方之第二晶片22上之導電凸塊20c電性連接該封裝基板4。接著,形成第二膠材5於該封裝基板4與最下方之第二晶片22之間,以包覆該導電凸塊20c。As shown in FIG. 2E, the stacked wafer group 2 is disposed on a package substrate 4, and the stacked wafer group 2 is electrically connected to the package substrate 4 by the conductive bumps 20c on the lowermost second wafer 22. . Next, a second adhesive material 5 is formed between the package substrate 4 and the lowermost second wafer 22 to cover the conductive bumps 20c.
本發明藉由將該堆疊晶片組2直接浸泡於該第一膠材30中,以讓該第一膠材30流入每一層晶片之間,再移除該堆疊晶片組2外部多餘之第一膠材30a,30b,相較於習知技術,本發明不需逐層形成膠材,故本發明不僅製程簡易,且可大幅縮短製程時間。再者,亦藉由切割及電漿方式移除多餘之第一膠材30a,30b,以克服習知技術之多餘膠材影響產品外觀、可靠度、及污染機台等問題。The invention directly immerses the stacked wafer set 2 in the first glue 30 to allow the first glue 30 to flow between each layer of wafers, and then remove the excess first glue on the outside of the stacked wafer set 2. The materials 30a, 30b, compared with the prior art, the invention does not need to form a glue layer layer by layer, so the invention not only has a simple process, but also can greatly shorten the process time. Moreover, the excess first rubber material 30a, 30b is also removed by cutting and plasma to overcome the problems of the appearance of the product, reliability, and contamination of the machine by the excess glue of the prior art.
又,不論各導電凸塊20a,20b,20c之間距尺寸為何,該第一膠材30均可流入每一層晶片之間,不僅製程簡易、作業時間快速,且良率提升,有助於細間距之設計。Moreover, regardless of the size of the distance between the conductive bumps 20a, 20b, and 20c, the first adhesive material 30 can flow between each layer of the wafer, which is not only simple in process, fast in operation time, but also improves yield and contributes to fine pitch. The design.
本發明復提供一種具堆疊晶片組之封裝件,係包括:封裝基板4、設置且電性連接於該封裝基板4上之堆疊晶片組2、以及第一膠材30。The present invention further provides a package having a stacked wafer set, comprising: a package substrate 4, a stacked wafer set 2 disposed on the package substrate 4, and a first glue 30.
所述之堆疊晶片組2具有第一晶片21及疊接在該第一晶片21之上之至少一第二晶片22,以令該第一晶片21藉由導電凸塊20a電性連接該第二晶片22,且各該第二晶片22係藉由導電凸塊20b相互電性連接,又該堆疊晶片組2係以該第二晶片22設置於該封裝基板4上,並且該第一晶片21之厚度t大於該第二晶片22之厚度h。另外,該堆疊晶片組2係藉由該第二晶片22之導電凸塊20c電性連接該封裝基板4。The stacked wafer set 2 has a first wafer 21 and at least one second wafer 22 stacked on the first wafer 21, so that the first wafer 21 is electrically connected to the second by the conductive bumps 20a. The second wafer 22 is electrically connected to each other by the conductive bumps 20b, and the stacked wafer group 2 is disposed on the package substrate 4 by the second wafer 22, and the first wafer 21 is The thickness t is greater than the thickness h of the second wafer 22. In addition, the stacked wafer set 2 is electrically connected to the package substrate 4 by the conductive bumps 20c of the second wafer 22.
所述之第一膠材30係設於該第一晶片21與該第二晶片22之間的間隙、及各該第二晶片22之間的間隙。The first adhesive material 30 is disposed in a gap between the first wafer 21 and the second wafer 22 and a gap between the second wafers 22 .
所述之封裝件復包括第二膠材5,係設於該封裝基板4與該第二晶片22之間。The package further includes a second adhesive 5 disposed between the package substrate 4 and the second wafer 22 .
綜上所述,本發明具堆疊晶片組之封裝件及其製法藉由將該堆疊晶片組直接浸泡於第一膠材中,以讓該第一膠材流入每一層晶片之間,再移除該堆疊晶片組外部多餘之第一膠材,故本發明不需逐層形成膠材,因而有效簡化製程,且有效縮短製程時間。再者,藉由移除多餘之第一膠材,以維持產品外觀,提升產品可靠度,且避免污染機台。In summary, the package with the stacked chip set of the present invention and the method for manufacturing the same are prepared by directly immersing the stacked wafer set in the first adhesive material, so that the first adhesive material flows between each layer of the wafer, and then removes The first adhesive material is external to the stacked wafer set, so the invention does not need to form a glue material layer by layer, thereby effectively simplifying the process and effectively shortening the process time. Furthermore, by removing the excess first glue, the appearance of the product is maintained, the reliability of the product is improved, and the machine is prevented from being contaminated.
上述實施例係用以例示性說明本發明之原理及其功效,而非用於限制本發明。任何熟習此項技藝之人士均可在不違背本發明之精神及範疇下,對上述實施例進行修改。因此本發明之權利保護範圍,應如後述之申請專利範圍所列。The above embodiments are intended to illustrate the principles of the invention and its effects, and are not intended to limit the invention. Any of the above-described embodiments may be modified by those skilled in the art without departing from the spirit and scope of the invention. Therefore, the scope of protection of the present invention should be as set forth in the appended claims.
10、10’、12...晶片10, 10', 12. . . Wafer
100、20a、20b、20c...導電凸塊100, 20a, 20b, 20c. . . Conductive bump
11...黏膠膜11. . . Adhesive film
11’...膠材11’. . . Plastic material
2...堆疊晶片組2. . . Stacked chip set
2a...側部2a. . . Side
21...第一晶片twenty one. . . First wafer
22...第二晶片twenty two. . . Second chip
3...容器3. . . container
30、30a、30b...第一膠材30, 30a, 30b. . . First glue
4...封裝基板4. . . Package substrate
5...第二膠材5. . . Second glue
S...切割線S. . . Cutting line
t、h...厚度t, h. . . thickness
第1A及1B圖係為習知堆疊晶片組之剖面示意圖;以及第2A至2E圖係為本發明具堆疊晶片組之封裝件之製法之剖面示意圖。1A and 1B are schematic cross-sectional views of a conventional stacked wafer set; and Figs. 2A to 2E are schematic cross-sectional views showing a method of manufacturing a package having a stacked wafer set.
2...堆疊晶片組2. . . Stacked chip set
20a、20b、20c...導電凸塊20a, 20b, 20c. . . Conductive bump
21...第一晶片twenty one. . . First wafer
22...第二晶片twenty two. . . Second chip
30...第一膠材30. . . First glue
4...封裝基板4. . . Package substrate
5...第二膠材5. . . Second glue
t、h...厚度t, h. . . thickness
Claims (21)
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