TWI429346B - High thermal conductivity metal substrate and manufacturing method thereof - Google Patents
High thermal conductivity metal substrate and manufacturing method thereof Download PDFInfo
- Publication number
- TWI429346B TWI429346B TW100100012A TW100100012A TWI429346B TW I429346 B TWI429346 B TW I429346B TW 100100012 A TW100100012 A TW 100100012A TW 100100012 A TW100100012 A TW 100100012A TW I429346 B TWI429346 B TW I429346B
- Authority
- TW
- Taiwan
- Prior art keywords
- thermally conductive
- powder
- metal layer
- resin
- spherical
- Prior art date
Links
- 229910052751 metal Inorganic materials 0.000 title claims description 131
- 239000002184 metal Substances 0.000 title claims description 131
- 239000000758 substrate Substances 0.000 title claims description 50
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000000843 powder Substances 0.000 claims description 87
- 239000011347 resin Substances 0.000 claims description 52
- 229920005989 resin Polymers 0.000 claims description 52
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 7
- 239000002245 particle Substances 0.000 claims description 7
- 239000000919 ceramic Substances 0.000 claims description 4
- 238000005096 rolling process Methods 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 239000003822 epoxy resin Substances 0.000 claims description 3
- 238000007745 plasma electrolytic oxidation reaction Methods 0.000 claims description 3
- 229920000647 polyepoxide Polymers 0.000 claims description 3
- 239000004925 Acrylic resin Substances 0.000 claims description 2
- 229920000178 Acrylic resin Polymers 0.000 claims description 2
- 229910052582 BN Inorganic materials 0.000 claims description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 2
- 238000000889 atomisation Methods 0.000 claims description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 2
- 238000007747 plating Methods 0.000 claims description 2
- 229910052707 ruthenium Inorganic materials 0.000 claims description 2
- CQBLUJRVOKGWCF-UHFFFAOYSA-N [O].[AlH3] Chemical group [O].[AlH3] CQBLUJRVOKGWCF-UHFFFAOYSA-N 0.000 claims 1
- 239000004519 grease Substances 0.000 claims 1
- 238000013007 heat curing Methods 0.000 claims 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims 1
- 229910001936 tantalum oxide Inorganic materials 0.000 claims 1
- 239000010410 layer Substances 0.000 description 101
- 238000012546 transfer Methods 0.000 description 9
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 8
- 239000011889 copper foil Substances 0.000 description 8
- 238000012360 testing method Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 4
- 238000013021 overheating Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 239000004848 polyfunctional curative Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- JIYNFFGKZCOPKN-UHFFFAOYSA-N sbb061129 Chemical compound O=C1OC(=O)C2C1C1C=C(C)C2C1 JIYNFFGKZCOPKN-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Laminated Bodies (AREA)
Description
本發明係關於一種金屬基板及其製造方法,特別是一種高導熱金屬基板及其製造方法。The present invention relates to a metal substrate and a method of manufacturing the same, and more particularly to a highly thermally conductive metal substrate and a method of manufacturing the same.
習知之印刷電路板結構包括一表面金屬層與一絕緣層,該表面金屬層可以刻畫形成電路。隨著電子產品朝向輕薄短小的趨勢發展,電路板上的電子元件發熱密度越來越大,電子元件產生的熱量若無法有效散去將使元件之可靠度降低。習知之印刷電路板並無特殊之散熱設計,其散熱效果已無法滿足需求。Conventional printed circuit board structures include a surface metal layer and an insulating layer that can be patterned to form an electrical circuit. As electronic products move toward a lighter and shorter trend, the electronic components on the circuit board become more and more dense, and the heat generated by the electronic components cannot be effectively dissipated, which will reduce the reliability of the components. The conventional printed circuit board has no special heat dissipation design, and its heat dissipation effect cannot meet the demand.
習知之導熱金屬基板包括三層之層疊結構:一底層金屬層、一導熱介電層(或導熱介電層層疊於底層金屬之上)及一表面金屬層。如中華民國專利第430959號之「印刷電路板之熱導結構」、第M299865號之「液晶顯示器之二極體載板結構改良」、第M311116號之「發光二極體載板之印刷電路板結構改良」、第M331757號之「照明模組及其載板結構」、第M338542號之「整合性散熱基板」。The conventional thermally conductive metal substrate comprises a three-layer laminate structure: an underlying metal layer, a thermally conductive dielectric layer (or a thermally conductive dielectric layer overlying the underlying metal), and a surface metal layer. For example, "The Thermal Conduction Structure of Printed Circuit Board" of the Republic of China Patent No. 430959, "Improvement of the Structure of the Diode Carrier Plate of the Liquid Crystal Display", No. M311865, "Printed Circuit Board of the Light Emitting Diode Carrier" Structural Improvements, "Lighting Modules and Carrier Structures", No. M331757, and "Integrated Heat Dissipation Substrates", No. M338542.
在該等習知專利中,表面金屬層係用以刻畫電路,用以驅動電子元件;且由於底層金屬層的導入,使得習知導熱金屬基板的散熱效果優於習知的印刷電路板。許多運作時易產生高熱的電子元件,例如高功率的發光二極體,可以使用習知導熱金屬基板作為載板以改善其過熱的問題。導熱介電層是金屬基板之關鍵材料,在習知技術中是混摻有導熱粉體之樹脂,使樹脂具有較一般樹脂更佳之熱傳導係數。In these prior patents, the surface metal layer is used to trace the circuit for driving the electronic component; and because of the introduction of the underlying metal layer, the heat dissipation effect of the conventional thermally conductive metal substrate is superior to that of the conventional printed circuit board. Many electronic components that are prone to generate high heat during operation, such as high-power light-emitting diodes, can use a conventional thermally conductive metal substrate as a carrier to improve the problem of overheating. The heat conductive dielectric layer is a key material of the metal substrate. In the prior art, the resin is mixed with a heat conductive powder, so that the resin has a better heat transfer coefficient than the general resin.
參考圖1,其顯示習知導熱金屬基板之示意圖。該習知導熱金屬基板1包括一底層金屬層11、一導熱介電層12及一表面金屬層13。該導熱介電層12設置於該底層金屬層11與該表面金屬層13之間。習知導熱金屬基板1的製作方法,是將具有導熱效果之樹脂121及導熱粉體122先調配好,再施加於表面金屬層13與底層金屬層11之間。然而,該種習知導熱金屬基板1的製作方法仍有許多需要改善的地方:1、為了增加導熱介電層12的熱傳導係數,必須添加大量的導熱粉體122,降低了樹脂121的可塗覆性與接著性。2、導熱粉體122之粒徑較不均勻且被樹脂121包覆不相接觸,降低了導熱粉體122之間的連續性,使得習知導熱金屬基板1整體的熱傳效能降低。Referring to Figure 1, there is shown a schematic view of a conventional thermally conductive metal substrate. The conventional thermally conductive metal substrate 1 includes an underlying metal layer 11, a thermally conductive dielectric layer 12, and a surface metal layer 13. The thermally conductive dielectric layer 12 is disposed between the underlying metal layer 11 and the surface metal layer 13. The conventional method for fabricating the thermally conductive metal substrate 1 is to firstly dispose the resin 121 having a heat conductive effect and the thermally conductive powder 122, and then apply it between the surface metal layer 13 and the underlying metal layer 11. However, there are still many areas for improvement in the fabrication method of the conventional heat conductive metal substrate 1. In order to increase the heat transfer coefficient of the heat conductive dielectric layer 12, a large amount of the heat conductive powder 122 must be added to reduce the coatability of the resin 121. Coverage and adhesion. 2. The particle size of the heat conductive powder 122 is relatively uneven and is not covered by the resin 121, which reduces the continuity between the heat conductive powders 122, so that the heat transfer efficiency of the heat conductive metal substrate 1 as a whole is lowered.
因此,有必要提供一創新且具進步性的高導熱金屬基板及其製造方法,以解決上述問題。Therefore, it is necessary to provide an innovative and progressive high thermal conductivity metal substrate and a method of manufacturing the same to solve the above problems.
本發明係提供一種高導熱金屬基板,包括一第一金屬層、一第二金屬層及一導熱介電層。該導熱介電層設置於該第一金屬層與該第二金屬層之間,該導熱介電層包括複數個球形導熱粉體及一樹脂。The invention provides a high thermal conductivity metal substrate comprising a first metal layer, a second metal layer and a thermally conductive dielectric layer. The thermally conductive dielectric layer is disposed between the first metal layer and the second metal layer, and the thermally conductive dielectric layer comprises a plurality of spherical thermally conductive powders and a resin.
本發明另提供一種高導熱金屬基板之製造方法,包括以下步驟:(a)設置一樹脂於一第一金屬層之一樹脂設置面;(b)設置複數個球形導熱粉體於一第二金屬層之一粉體設置面;及(c)使該樹脂設置面朝向該粉體設置面,熱壓該樹脂及該等球形導熱粉體,以於該第一金屬層與該第二金屬層之間形成一導熱介電層。The invention further provides a method for manufacturing a high thermal conductivity metal substrate, comprising the steps of: (a) disposing a resin on a resin setting surface of a first metal layer; (b) providing a plurality of spherical thermal conductive powders on a second metal a powder setting surface of the layer; and (c) facing the resin setting surface toward the powder setting surface, thermally pressing the resin and the spherical heat conductive powder to the first metal layer and the second metal layer A thermally conductive dielectric layer is formed therebetween.
在本發明之高導熱金屬基板及其製造方法中,該等球形導熱粉體可增加熱傳路徑之連續性,以增加熱傳效能,故可應用於高發熱密度之裝置(例如電子元件)上,可改善過熱的問題。並且,該等球形導熱粉體具有較為平均之粒徑,可使得該導熱介電層之厚度更加均勻。再者,該高導熱金屬基板之製作上不需預混該樹脂及該等導熱粉體,可增加該樹脂之塗覆性。In the highly thermally conductive metal substrate of the present invention and the method of manufacturing the same, the spherical thermally conductive powders can increase the continuity of the heat transfer path to increase heat transfer efficiency, and thus can be applied to devices having high heat density (for example, electronic components). Can improve the problem of overheating. Moreover, the spherical thermally conductive powders have a relatively average particle size, which makes the thickness of the thermally conductive dielectric layer more uniform. Furthermore, the high thermal conductivity metal substrate does not need to be premixed with the resin and the thermally conductive powder to increase the coating property of the resin.
圖2顯示本發明較佳實施例高導熱金屬基板之製造方法之流程圖;圖3顯示本發明高導熱金屬基板之示意圖。配合參考圖2及圖3,首先,參考步驟S21,設置一樹脂221於一第一金屬層21之一樹脂設置面211。在本實施例中,在步驟S21中係以塗覆方式設置該樹脂221於該樹脂設置面211。2 is a flow chart showing a method of manufacturing a highly thermally conductive metal substrate according to a preferred embodiment of the present invention; and FIG. 3 is a schematic view showing a highly thermally conductive metal substrate of the present invention. Referring to FIG. 2 and FIG. 3, first, referring to step S21, a resin 221 is disposed on a resin setting surface 211 of a first metal layer 21. In the present embodiment, the resin 221 is provided on the resin setting surface 211 in a coating manner in step S21.
參考步驟S22,設置複數個球形導熱粉體222於一第二金屬層23之一粉體設置面231。在本實施例中,步驟S22包括以下步驟:使該第二金屬層23帶靜電;及設置該等球形導熱粉體222於該粉體設置面231。在本實施例中,在步驟S22中係以噴嘴霧化或灑佈方式設置該等球形導熱粉體222於該粉體設置面231。Referring to step S22, a plurality of spherical thermally conductive powders 222 are disposed on one of the powder placement faces 231 of a second metal layer 23. In this embodiment, the step S22 includes the steps of: electrostatically charging the second metal layer 23; and disposing the spherical thermal conductive powder 222 on the powder setting surface 231. In the present embodiment, the spherical thermally conductive powders 222 are disposed on the powder setting surface 231 by nozzle atomization or sprinkling in step S22.
在其他應用中,亦可先設置一預塗層(圖中未示)於該粉體設置面231,再設置該等球形導熱粉體222於該預塗層上(可利用噴嘴霧化或灑佈方式)。In other applications, a pre-coat layer (not shown) may be first disposed on the powder setting surface 231, and the spherical heat-conducting powder 222 may be disposed on the pre-coating layer (a nozzle may be atomized or sprinkled) Cloth way).
使該第二金屬層23帶靜電或預設置該預塗層於該粉體設置面231,其係可增加該第二金屬層23與該等導熱粉體222間之附著能力;利用噴嘴霧化或灑佈的方式設置該等導熱粉體222於該粉體設置面231,可提升該等導熱粉體222之分散均勻度及平坦度,且可減少該等導熱粉體222之使用量。The second metal layer 23 is electrostatically charged or pre-coated on the powder setting surface 231, which can increase the adhesion between the second metal layer 23 and the thermal conductive powder 222; The heat-dissipating powder 222 is disposed on the powder-disposed surface 231 to increase the uniformity and flatness of the heat-conducting powders 222, and the amount of the heat-conductive powders 222 can be reduced.
參考步驟S23,使該樹脂設置面211朝向該粉體設置面231,熱壓該樹脂221及該等球形導熱粉體222,以於該第一金屬層21與該第二金屬層23之間形成一導熱介電層22。Referring to step S23, the resin setting surface 211 is directed toward the powder setting surface 231, and the resin 221 and the spherical thermally conductive powder 222 are hot pressed to form between the first metal layer 21 and the second metal layer 23. A thermally conductive dielectric layer 22.
在本實施例中,步驟S23包括以下步驟:滾壓該第一金屬層21(亦可選擇滾壓該第二金屬層23),使該樹脂221充設於該等球形導熱粉體222之間,且部分球形導熱粉體222接觸該樹脂設置面211及該粉體設置面231;及熱壓固化該樹脂221,以製作完成本發明之高導熱金屬基板2。較佳地,在步驟S23中係利用橡膠輥滾壓該第一金屬層21(或該第二金屬層23);利用熱壓機加熱加壓使該樹脂221固化。In this embodiment, the step S23 includes the steps of: rolling the first metal layer 21 (and optionally rolling the second metal layer 23), so that the resin 221 is charged between the spherical thermal conductive powders 222. And a part of the spherical heat conductive powder 222 is in contact with the resin setting surface 211 and the powder setting surface 231; and the resin 221 is heat-cured to form the highly thermally conductive metal substrate 2 of the present invention. Preferably, in step S23, the first metal layer 21 (or the second metal layer 23) is rolled by a rubber roller; and the resin 221 is cured by heat and pressure using a hot press.
再參考圖3,本發明之高導熱金屬基板2包括一第一金屬層21、一導熱介電層22及一第二金屬層23。該第一金屬層21及該第二金屬層23可為銅或鋁。較佳地,該樹脂設置面211及該粉體設置面231係為經陽極處理、微弧氧化、塗鍍金屬或化學蝕刻表面粗糙化處理之表面。Referring to FIG. 3 again, the highly thermally conductive metal substrate 2 of the present invention comprises a first metal layer 21, a thermally conductive dielectric layer 22 and a second metal layer 23. The first metal layer 21 and the second metal layer 23 may be copper or aluminum. Preferably, the resin setting surface 211 and the powder setting surface 231 are surfaces subjected to anodizing, micro-arc oxidation, metal plating or chemical etching surface roughening treatment.
該導熱介電層22設置於該第一金屬層21與該第二金屬層23之間。在該導熱介電層22中,其包括之該等球形導熱粉體222之粒徑係為50~150 μm,較佳之粒徑係為50 μm。該粉體設置面231朝向該樹脂設置面211。The thermally conductive dielectric layer 22 is disposed between the first metal layer 21 and the second metal layer 23 . The thermally conductive dielectric layer 22 includes the spherical thermally conductive powders 222 having a particle size of 50 to 150 μm, preferably 50 μm. The powder setting surface 231 faces the resin installation surface 211.
該導熱介電層22之樹脂221可為環氧樹脂、矽橡膠或壓克力樹脂。該導熱介電層22之球形導熱粉體222可為陶瓷粉體。該陶瓷粉體可為氧化鋁、氮化鋁、氧化矽或氮化硼。在本實施例中,該等球形導熱粉體222係位於該第一金屬層21與該第二金屬層23之間,且形成該層導熱粉體層22。The resin 221 of the thermally conductive dielectric layer 22 may be epoxy resin, ruthenium rubber or acrylic resin. The spherical thermally conductive powder 222 of the thermally conductive dielectric layer 22 can be a ceramic powder. The ceramic powder may be alumina, aluminum nitride, cerium oxide or boron nitride. In this embodiment, the spherical thermally conductive powder 222 is located between the first metal layer 21 and the second metal layer 23, and the layer of the thermal conductive powder layer 22 is formed.
參考圖4,在其他應用中,該等球形導熱粉體222於該第一金屬層21與該第二金屬層23之間可形成二層導熱粉體層223、224,或形成更多層之導熱粉體層。較佳地,該導熱粉體層223之球形導熱粉體222與該導熱粉體層224之球形導熱粉體222更相接觸。在圖4中清楚顯示,即使某一層導熱粉體層(導熱粉體層223)之局部不具有導熱粉體,各層之導熱粉體層223、224間同樣具有連續性之熱傳路徑,故具有較佳之熱傳效能。Referring to FIG. 4, in other applications, the spherical thermally conductive powder 222 may form two layers of thermal conductive powder layers 223, 224 between the first metal layer 21 and the second metal layer 23, or form more layers. Thermal powder layer. Preferably, the spherical thermally conductive powder 222 of the thermally conductive powder layer 223 is in closer contact with the spherical thermally conductive powder 222 of the thermally conductive powder layer 224. It is clearly shown in FIG. 4 that even if a part of the thermal conductive powder layer (thermally conductive powder layer 223) does not have a thermal conductive powder, the thermal conductive powder layers 223 and 224 of the respective layers also have a continuous heat transfer path, so that Better heat transfer performance.
茲配合圖3以下列實例予以詳細說明本發明,唯並不意謂本發明僅侷限於此等實例所揭示之內容。The invention is illustrated in detail by the following examples in conjunction with FIG. 3, and it is not intended that the invention be limited only by the examples.
材料:material:
(1)使用日本福田金屬之鍍鎳銅箔(型號NIMT-CF-35)作為該第一金屬層21。(1) The first metal layer 21 is used as a nickel-plated copper foil (model NIMT-CF-35) of Fukuda Metal Co., Ltd., Japan.
(2)使用中鋁5052鋁板作為該第二金屬層23,厚度1.5 mm。(2) A medium aluminum 5052 aluminum plate was used as the second metal layer 23, and the thickness was 1.5 mm.
(3)使用KOLON公司之環氧樹脂(型號KEP-1138),與硬化劑Nadic Methyl Anhydride以1:1的比例混合,作為該導熱介電層22中之樹脂221。(3) The epoxy resin (model KEP-1138) of KOLON Co., Ltd. was mixed with the hardener Nadic Methyl Anhydride at a ratio of 1:1 as the resin 221 in the thermally conductive dielectric layer 22.
(4)使用Denka公司的球形氧化鋁P50作為導熱粉體222,其平均粒徑為50 μm。(4) A spherical alumina P50 of Denka Corporation was used as the thermally conductive powder 222, and its average particle diameter was 50 μm.
製system 備:Ready:
(1)利用40號之bar coater將樹脂221塗覆於銅箔(第一金屬層21)之粗糙面(樹脂設置面211)上。(1) The resin 221 is applied onto the rough surface (resin setting surface 211) of the copper foil (first metal layer 21) by a bar coater of No. 40.
(2)利用氮氣噴槍將球形氧化鋁P50噴灑於鋁板(第二金屬層23)上,噴灑量為20 mg/cm2 。(2) A spherical alumina P50 was sprayed on the aluminum plate (second metal layer 23) with a nitrogen spray gun at a spray amount of 20 mg/cm 2 .
(3)將銅箔(第一金屬層21)塗有樹脂221之粗糙面覆蓋於鋁板(第二金屬層23)層佈有球形氧化鋁P50(導熱粉體222)之表面(粉體設置面231)上。(3) The rough surface of the copper foil (the first metal layer 21) coated with the resin 221 is covered on the surface of the aluminum plate (second metal layer 23) with the spherical alumina P50 (thermal conductive powder 222) (powder setting surface) 231) On.
(4)以橡膠輥輪滾壓銅箔(第一金屬層21)表面,使樹脂221充設於該等球形氧化鋁P50(導熱粉體222)之間,且使部分球形氧化鋁P50接觸該銅箔(第一金屬層21)及鋁板(第二金屬層23)。(4) rolling the surface of the copper foil (first metal layer 21) with a rubber roller so that the resin 221 is charged between the spherical alumina P50 (thermal powder 222), and the partially spherical alumina P50 is brought into contact with the Copper foil (first metal layer 21) and aluminum plate (second metal layer 23).
(5)將滾壓後之銅箔(第一金屬層21)、樹脂221+球形氧化鋁P50(導熱粉體222)、鋁板(第二金屬層23)之三層結構放入熱壓機,在230℃下熱壓2小時,使該銅箔(第一金屬層21)及鋁板(第二金屬層23)間之樹脂221及球形氧化鋁P50(導熱粉體222)形成導熱介電層22,以製得本發明之高導熱金屬基板2。(5) placing the three-layer structure of the rolled copper foil (first metal layer 21), resin 221 + spherical alumina P50 (thermal powder 222), and aluminum plate (second metal layer 23) in a hot press. The resin 221 and the spherical alumina P50 (thermal powder 222) between the copper foil (the first metal layer 21) and the aluminum plate (the second metal layer 23) are thermally pressed at 230 ° C for 2 hours to form the heat conductive dielectric layer 22 . To produce the highly thermally conductive metal substrate 2 of the present invention.
測試:test:
(1)熱阻測試:利用保護熱流法(依據ASTM E1530)測試該高導熱金屬基板2之熱阻,測試機種為Anter公司之UnithermTM Model 2022,測試結果顯示該高導熱金屬基板2之熱阻為1.8×10-4 m2 K/W,優於一般市售導熱金屬基板之熱阻。(1) Thermal resistance test: using a guarded heat flow method (according to ASTM E1530) to test the high thermal resistance of the metal substrate 2, the machine type of Unitherm TM Model Anter Corporation's 2022, test results show that the high thermal resistance of the metal substrate 2 It is 1.8×10 -4 m 2 K/W, which is superior to the thermal resistance of a commercially available thermally conductive metal substrate.
(2)耐熱性測試:利用錫爐測試該高導熱金屬基板2之耐熱性(依據JIS C6481),測試結果顯示該高導熱金屬基板2可承受260℃之熔錫達10分鐘以上。(2) Heat resistance test: The heat resistance of the high heat conductive metal substrate 2 was measured by a tin furnace (according to JIS C6481), and the test results showed that the high heat conductive metal substrate 2 can withstand 270 ° C melting for 10 minutes or more.
(3)接著強度測試:利用sintech 50 kN拉力試驗機測試銅箔(第一金屬層21)與鋁板(第二金屬層23)間之剝離強度,(依據JIS C6481),測試結果顯示該高導熱金屬基板2具有1.2 kN/m之極佳剝離強度。(3) Subsequent strength test: The peel strength between the copper foil (first metal layer 21) and the aluminum plate (second metal layer 23) was tested by a sintech 50 kN tensile tester (according to JIS C6481), and the test result showed the high thermal conductivity. The metal substrate 2 has an excellent peel strength of 1.2 kN/m.
在本發明之高導熱金屬基板2及其製造方法中,該等球形導熱粉體222可增加熱傳路徑之連續性,以增加熱傳效能,故可應用於高發熱密度之裝置(例如電子元件)上,可改善過熱的問題。並且,層佈之該等球形導熱粉體222具有較為平均之粒徑,可使得該導熱介電層22之厚度更加均勻。再者,該高導熱金屬基板2之製作上不需預混該樹脂221及該等導熱粉體222,可增加該樹脂221之塗覆性。In the highly thermally conductive metal substrate 2 of the present invention and the method of manufacturing the same, the spherical thermally conductive powders 222 can increase the continuity of the heat transfer path to increase heat transfer efficiency, and thus can be applied to devices having high heat density (for example, electronic components). ), can improve the problem of overheating. Moreover, the spherical thermally conductive powders 222 of the layered cloth have a relatively uniform particle size, which makes the thickness of the thermally conductive dielectric layer 22 more uniform. Furthermore, the high thermal conductivity metal substrate 2 does not need to be premixed with the resin 221 and the thermally conductive powder 222 to increase the coatability of the resin 221.
上述實施例僅為說明本發明之原理及其功效,並非限制本發明,因此習於此技術之人士對上述實施例進行修改及變化仍不脫本發明之精神。本發明之權利範圍應如後述之申請專利範圍所列。The above embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the scope of the present invention. The scope of the invention should be as set forth in the appended claims.
1...習知導熱金屬基板1. . . Conventional thermal metal substrate
2...本發明之高導熱金屬基板2. . . High thermal conductivity metal substrate of the invention
11...底層金屬層11. . . Underlying metal layer
12...導熱介電層12. . . Thermally conductive dielectric layer
13...表面金屬層13. . . Surface metal layer
21...第一金屬層twenty one. . . First metal layer
22...導熱介電層twenty two. . . Thermally conductive dielectric layer
23...第二金屬層twenty three. . . Second metal layer
121...樹脂121. . . Resin
122...導熱粉體122. . . Thermal powder
211...樹脂設置面211. . . Resin setting surface
221...樹脂221. . . Resin
222...導熱粉體222. . . Thermal powder
223、224...導熱粉體層223, 224. . . Thermal powder layer
231...粉體設置面231. . . Powder setting surface
圖1顯示習知導熱金屬基板之示意圖;Figure 1 shows a schematic view of a conventional thermally conductive metal substrate;
圖2顯示本發明實施例高導熱金屬基板之製造方法之流程圖;2 is a flow chart showing a method of manufacturing a highly thermally conductive metal substrate according to an embodiment of the present invention;
圖3顯示本發明實施例之高導熱金屬基板之示意圖;及3 is a schematic view showing a highly thermally conductive metal substrate according to an embodiment of the present invention; and
圖4顯示本發明高導熱金屬基板之另一態樣之示意圖。4 is a schematic view showing another aspect of the highly thermally conductive metal substrate of the present invention.
2...本發明之高導熱金屬基板2. . . High thermal conductivity metal substrate of the invention
21...第一金屬層twenty one. . . First metal layer
22...導熱介電層twenty two. . . Thermally conductive dielectric layer
23...第二金屬層twenty three. . . Second metal layer
211...樹脂設置面211. . . Resin setting surface
221...樹脂221. . . Resin
222...導熱粉體222. . . Thermal powder
231...粉體設置面231. . . Powder setting surface
Claims (15)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW100100012A TWI429346B (en) | 2011-01-03 | 2011-01-03 | High thermal conductivity metal substrate and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW100100012A TWI429346B (en) | 2011-01-03 | 2011-01-03 | High thermal conductivity metal substrate and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201230900A TW201230900A (en) | 2012-07-16 |
| TWI429346B true TWI429346B (en) | 2014-03-01 |
Family
ID=46934265
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100100012A TWI429346B (en) | 2011-01-03 | 2011-01-03 | High thermal conductivity metal substrate and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TWI429346B (en) |
-
2011
- 2011-01-03 TW TW100100012A patent/TWI429346B/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| TW201230900A (en) | 2012-07-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN206250180U (en) | Thermal Interface Material Components and Devices | |
| US9795059B2 (en) | Thermal interface materials with thin film or metallization | |
| TWI476572B (en) | Heat radiation tape and manufacturing method thereof | |
| TW200932047A (en) | Bendable circuit structure for LED mounting and interconnection | |
| WO2016092956A1 (en) | Board for light emitting devices and method for producing board for light emitting devices | |
| US20120012382A1 (en) | Conductive Films for EMI Shielding Applications | |
| KR20130132984A (en) | Temperature-control element and method for attaching an electronic component to the temperature-control element | |
| KR100934476B1 (en) | Circuit boards and manufacturing method thereof | |
| TW202027977A (en) | Carbonaceous member with metal layer, and thermal conduction plate | |
| US20110024101A1 (en) | Thermal conductive substrate and method of manufacturing the same | |
| KR100919975B1 (en) | Light emitting module using printed circuit board and printed circuit board with excellent heat dissipation | |
| CN102548191A (en) | Circuit board and manufacturing method thereof | |
| JP2018160636A (en) | High frequency substrate | |
| CN102422730B (en) | Conductive Films for EMI Shielding Applications | |
| TWI429346B (en) | High thermal conductivity metal substrate and manufacturing method thereof | |
| CN103682031A (en) | Heat radiation baseplate with insulating and radiating layer and manufacturing method thereof | |
| US8598463B2 (en) | Circuit board and manufacturing method thereof | |
| CN105860866B (en) | Equal thermal bonding tape | |
| CN107708296A (en) | A kind of metal-based circuit board of high heat conduction and preparation method thereof | |
| KR100939760B1 (en) | Method for generating a substrate used for heat-radiating pcb and the substrate thereof | |
| US20170023214A1 (en) | Composite multi-layer circuit board and manufacturing method thereof | |
| CN201490177U (en) | Metal-based copper clad laminates for mounting semiconductor power devices | |
| TWI506830B (en) | Heat dissipation substrate with insulating heat sink and its manufacturing method | |
| TWI407847B (en) | Heat dissipating plate | |
| KR101214261B1 (en) | Metal printed circuit board |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |