TWI424808B - Plant lighting and plant cultivation system - Google Patents

Description

Lighting device and plant cultivation system for plant cultivation

The present invention relates to a lighting device for plant cultivation and a plant cultivation system using the same.

In recent years, in the construction of an agro-environment that is not affected by changes in natural conditions, plant factories and vegetable factories that produce crops, etc., have been controlled under all conditions that affect the growth of plants such as light, temperature, humidity, and carbon dioxide concentration in the cultivation environment. It has been put into practical use.

In these plant factories, there is a combination of fully artificial light type and sunlight, but both must be provided with illumination devices that emit artificial light. The illumination device must illuminate the plants with red and blue light. A light-emitting device (LED: Light Emitting Diode) is used as the light source of the illumination device.

The environment of the cultivation room in which the plant cultivation is performed, such as the plant factory shown above, is maintained and managed at a predetermined temperature and humidity. Therefore, the heat from the lighting device installed here affects the temperature management of the cultivation room, which is less desirable. Further, since the cultivation room is generally high-temperature and high-humidity, if the illumination device is installed in the cultivation room, the deterioration is severe, the life is shortened, and the like, and the environment in which the illumination device is installed is less preferable.

Patent Document 1 describes a plant cultivation device in which a light source including a panel-shaped photo-semiconductor unit including a forced cooling device using a heat-refrigerant is placed in close proximity to a plant cultivation surface.

Patent Document 2 discloses a substrate made of a metal thin plate that is in close contact with the pedestal in order to improve the durability of the illuminating panel for plant cultivation even in a high humidity environment, and is arranged on the substrate. a plurality of light-emitting diodes; a cover member disposed with a space separating the base; and a seal member between the base and the cover member for maintaining a space in an airtight manner with respect to the outside, filling the space with dry air And a lighting panel for plant cultivation in which a desiccant is accommodated in the frame material.

In Patent Document 3, a heat radiation of a semiconductor light-emitting device that promotes a semiconductor light-emitting illumination device for plant cultivation is performed, and high luminance is applied by application of a large current, and the cooling water can be passed on the upper side and can be internally energized. a metal wall; and a semiconductor light-emitting illumination device mounted on a light source unit at a lower portion of the metal wall.

(previous technical literature) (Patent Literature)

(Patent Document 1) Japanese Patent Publication No. 9-98665

(Patent Document 2) Japanese Patent Laid-Open Publication No. 2000-207933

(Patent Document 3) Japanese Patent Laid-Open Publication No. 2003-110143

Conventionally, in plant cultivation using a semiconductor light-emitting element as a light source, a current exceeding a rated current is applied in order to obtain a photon density required for plant growth. Along with this, the amount of heat generated by the semiconductor light emitting element increases, and the junction temperature of the semiconductor light emitting element increases. The increase in temperature of the semiconductor light-emitting device has a problem that the light-emitting efficiency of the semiconductor light-emitting device itself is reduced and the resin material such as an epoxy resin which is a peripheral member of the semiconductor light-emitting device is yellowed. In order to solve this problem, it is effective to water-cool a semiconductor light-emitting element, but cause condensation or moisture absorption in a semiconductor light-emitting element or a peripheral member of the semiconductor light-emitting element, the semiconductor light-emitting element itself is deteriorated or not lit, and silver plating is applied around the semiconductor light-emitting element. Decreased luminous intensity caused by oxidation of solder, solder, and copper foil or rapid development of non-lighting causes problems. In particular, the red light-emitting element having a peak wavelength of 660 nm is a Ga _1-x Al _x As-based compound semiconductor light-emitting element having a high Al composition. Therefore, in a high-humidity environment, oxygen is easily bonded to Al atoms to cause semiconductor light emission. The component itself deteriorates rapidly, and the luminous intensity is rapidly reduced, so that the light is not turned on.

An object of the present invention is to provide a plant which solves the problem of condensation and moisture absorption when the semiconductor light-emitting device is efficiently cooled by a refrigerant such as water, and uses a long-life and high-efficiency semiconductor light-emitting element as a light source. A lighting device for cultivation and a plant cultivation system using the same.

According to this object, an illumination device to which the present invention is applied is an illumination device for plant cultivation, characterized by comprising: a plurality of light-emitting elements; and a light-transmissive window portion that transmits light emitted from the light-emitting elements to cover the light-emitting elements a frame body; a heat radiation substrate disposed inside the frame body to radiate heat generated by the light-emitting element by conduction; and a refrigerant pipe mounted as a refrigerant flow path on the heat radiation substrate, the frame system is configured : A refrigerant conduit is included inside the casing, and the inside of the casing suppresses the inflow of the outside air.

In the illumination device for plant cultivation as described above, it is characterized in that the frame system is configured to fill the inside of the frame with dry air or dry nitrogen.

In addition, the illumination device for plant cultivation may be further provided with a connection means for connecting the refrigerant conduit to the adjacent refrigerant conduit provided in the adjacent illumination device, and forming a refrigerant flow path between the adjacent refrigerant conduit and the refrigerant conduit. .

On the other hand, it can be characterized in that the frame has an elongated box shape, one surface in the elongated direction constitutes a translucent window portion, and the other three faces in the elongate direction constitute a connected exterior portion, and the remaining 2 The face system constitutes the side portion.

The feature is that the exterior portion is formed by extrusion molding of aluminum or aluminum alloy.

The heat-generating substrate has a feature in which a portion into which a refrigerant conduit is inserted is formed by extrusion molding of aluminum or an aluminum alloy, and is integrally formed with the inserted refrigerant conduit.

Next, it may be characterized in that the light-emitting element is provided in the light-emitting element package, the light-emitting element package is fixed to the circuit board, and the circuit board is fixed to the heat radiation substrate.

Further, it may be characterized in that the light-emitting element is directly connected to the metal base portion of the circuit substrate of the metal base, and the circuit substrate is fixed to the heat radiation substrate.

Further, it is characterized in that the light-emitting element includes a light-emitting element having an emission peak wavelength of 400 to 500 nm and a light-emitting element having an emission peak wavelength of 655 to 675 nm.

The light-emitting element includes a compound semiconductor layer including at least a pn junction type light-emitting portion and a deformation adjustment layer laminated on the light-emitting portion, and the light-emitting portion has a composition formula (Al _X Ga _1-X ) _Y a laminated structure of the deformed light-emitting layer and the barrier layer formed by In _1-Y P (0≦X≦0.1, 0.37≦Y≦0.46), the deformation-adjusting layer is transparent with respect to the light-emitting wavelength, and has a smaller than the deformed light-emitting layer and The lattice constant of the lattice constant of the barrier layer.

Further, it is characterized in that the illumination device for plant cultivation according to the present invention is provided with a reflector for setting the direction of the light of the light-emitting element between the light-emitting element and the light-transmitting window portion.

Next, from another viewpoint, the plant cultivation system to which the present invention is applied is characterized in that it includes a plurality of light-emitting elements and a light-transmissive window portion that transmits light emitted from the light-emitting elements, and is provided to cover the light-emitting elements. a heat dissipation substrate that is disposed inside the casing and that radiates heat generated by the light-emitting element by conduction, and a refrigerant conduit that is attached to the heat radiation substrate as a refrigerant flow path, and that is adjacent to the refrigerant An illuminating device for cultivating a plurality of plants in which a plurality of plants are connected to each other to form a refrigerant flow path; a refrigerant supply unit for supplying a refrigerant to a refrigerant pipe to which a plurality of plant cultivation illuminating devices are connected; and a light-emitting element for controlling a plurality of illuminating devices for plant cultivation The lighting control unit that lights up and turns off the lights.

According to the present invention, it is possible to provide a semiconductor light-emitting element which uses long-life and high-efficiency semiconductor light-emitting elements as a light source by solving problems caused by condensation and moisture absorption when the semiconductor light-emitting element is efficiently cooled by a refrigerant such as water. A lighting device for plant cultivation and a plant cultivation system using the same.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

(First embodiment)

Fig. 1 is a view showing an example of a plant cultivation system 1 to which the present embodiment is applied.

The plant cultivation system 1 includes a plurality of cultivation containers 50 installed in the cultivation room 60 for cultivating plants, and a plurality of illuminations that are provided in the cultivation room 60 in close proximity to the cultivation container 50 to illuminate the cultivated plants. Device 10. A refrigerant conduit 25 is provided in each of the illumination devices 10. Next, the plurality of illumination devices 10 are connected by a connection means. That is, the refrigerant conduit 25 of the illumination device 10 and the refrigerant conduit 25 (adjacent to the refrigerant conduit) of the illumination device 10 adjacent thereto are connected to each other to form a flow path of the refrigerant.

Further, the plant cultivation system 1 includes an illumination control unit 30 that is provided outside the cultivation room 60 to control lighting of the illumination device 10 to be turned on/off, and is similarly disposed outside the cultivation room 60 and is used for The refrigerant such as water that cools the illuminating device 10 is supplied to the refrigerant supply unit 40 of the refrigerant conduit 25.

The cultivation room 60 may have any configuration if it is an environment capable of controlling temperature, humidity, lighting, or the like. Next, the cultivation chamber 60 may be an environment that blocks light or air flowing from the outside, or may have an environment such as a window that allows external light or air to flow.

The cultivation container 50 may be a container into which soil is placed to grow plants. Further, it may be a container for maintaining a nutrient solution for supplying nutrients to plants, such as hydroponic cultivation.

Next, although not shown in the first drawing, the plant cultivation system 1 may be provided with a water spray portion for spraying a plant to the cultivation container 50. In addition, when the plant is hydroponic cultivation, a nutrient solution supply unit that supplies or circulates the nutrient solution for water supply and cultivation may be provided.

The illuminating device 10 includes a plurality of semiconductor light-emitting elements (for example, a plurality of semiconductor light-emitting devices in which the first semiconductor light-emitting device 64a and the second semiconductor light-emitting device 64b are housed in the light-emitting device package 21 of the fifth embodiment to be described later) Element) as a light-emitting element. At this time, the light generated by the plurality of semiconductor light-emitting elements is irradiated to the plants cultivated in the cultivation container 50. Therefore, each of the illumination devices 10 is provided with illumination control wirings 31 for supplying electric power for illumination to the semiconductor light-emitting elements, and for controlling the lighting/lighting of the semiconductor light-emitting elements. These illumination control wirings 31 are connected to the illumination control unit 30.

However, each of the illumination control wirings 31 may be connected to each other so that all of the semiconductor light-emitting elements in the illumination device 10 to which the illumination control wiring 31 is connected are simultaneously turned on/off. Further, the semiconductor light-emitting elements in one illumination device 10 may be grouped by, for example, a luminescent color or the like, and the connection may be performed in such a manner that the lighting is turned on/off by each group.

The lighting control unit 30 may be one that can control the lighting/lighting of the lighting device 10. Therefore, it is only necessary to arrange a switch array in which the power supply is turned on/off for each illumination device 10. In addition, the on/off of the switch array can also be controlled by a computer or the like. The illumination control unit 30 may be configured to control the applied current value of the semiconductor light-emitting element such as red or blue. Further, in the case of pulse lighting, it is preferable to control the period and the duty of the semiconductor light-emitting element such as red or blue. It is advisable to perform timer control for the lighting time and the non-lighting time.

Further, as shown by the broken line in Fig. 1, each of the illumination devices 10 includes a refrigerant conduit 25 that discharges heat generated by the semiconductor light-emitting device to the outside of the cultivation chamber 60 and that penetrates the illumination device 10 in the longitudinal direction. . Then, the respective illuminating devices 10 are connected to each other by a pipe coupler (a first pipe coupler 16 and a second pipe coupler 17 in the second drawing to be described later) connected to the end of the refrigerant pipe 25. The two end portions of the refrigerant duct 25 that are not connected to the other illuminating device 10 are connected to the refrigerant supply unit 40 through the refrigerant pipe 41. As described above, the refrigerant conduits 25 are formed as a part of the conduits that are connected to each other through the refrigerant supply unit 40, so that the liquid (refrigerant) can be circulated.

The refrigerant supply unit 40 controls the refrigerant to circulate in the plurality of illumination devices 10 (the flow direction of the refrigerant is indicated by an arrow). The refrigerant supply unit 40 can be, for example, a pump that is driven by a motor. Next, the motor power supply system may be connected to the illumination control unit 30 so that the refrigerant is supplied when the semiconductor light-emitting element is turned on.

In the first embodiment, the case where all the illumination devices 10 are connected in series is shown. However, a plurality of rows of the illumination devices 10 connected in series may be provided in parallel. In addition, it is also possible to have a portion connected in series and a portion in parallel. In other words, if the refrigerant supply unit 40 allows the refrigerant to circulate through the refrigerant conduit 25 of the illumination device 10, the illumination device 10 is cooled, and the heat generated by the semiconductor light-emitting element is discharged to the outside of the cultivation chamber 60. Just fine.

In the illuminating device 10 of the first embodiment, in order to make the flow of the refrigerant in the plant cultivation system 1 clear, the refrigerant conduit 25 in the illuminating device 10 is indicated by a broken line. However, as will be described later, in the illuminating device 10, In addition to the refrigerant duct 25, a light-emitting element package (light-emitting element package 21 of Fig. 5 to be described later) or the like is additionally included.

Fig. 2 is a view showing an example of the outer shape of the lighting device 10 to which the present embodiment is applied. Fig. 2(a) is a top view, Fig. 2(b) is a bottom view, Fig. 2(c) is a left side view, and Fig. 2(d) is a right side view.

The illuminating device 10 is provided as an example of an exterior part. Font exterior cover member 11; a transparent cover member 12 which is an example of a translucent window portion, a first side cover member 13 which is an example of a side surface portion provided on the left side surface, and a left side surface The second side cover 14 of one of the side portions.

The first side cover member 13 and the second side cover member 14 are provided so as to be attached to both end portions of the outer cover member 11 to which the transparent cover member 12 is attached.

That is, the outer shape of the illuminating device 10 is a box shape surrounded by the exterior cover member 11, the transparent cover member 12, the first side cover member 13, and the second side cover member 14. In terms of the shape of the box shape, the elongated box shape is more suitable for use in the use environment, but is not particularly limited to a box shape in the present invention. Next, the exterior cover member 11, the transparent cover member 12, the first side cover member 13, and the second side cover member 14 constitute a casing of the illuminating device 10. The inside of the casing formed by the cover members is referred to as the inside or inside of the illumination device 10, and the outside of the casing is referred to as the outside or outside of the illumination device 10.

In the outer side of the first side cover 13 provided on the left side surface of the illuminating device 10, a female pipe as an example of a connection means connected to the refrigerant conduit 25 inside the illuminating device 10 is provided via the pipe joint 15. The second pipe coupler 17 of the member.

On the outer side of the second side cover member 14, a first pipe coupler 16 belonging to the male pipe member as an example of a connection means connected to the refrigerant pipe 25 is provided via the pipe joint 15. In other words, the first pipe coupler 16 and the second pipe coupler 17 are disposed at positions facing the casing of the illuminating device 10.

Further, the illumination control wiring 31 is protruded from the outside by the second side cover 14 . Among them, the illumination control wiring 31 selects a covered wire that can withstand the high temperature and high humidity environment in the cultivation chamber 60.

The outer cover member 11 may be any material if it is provided to impart rigidity to the illuminating device 10 and prevent deformation. For example, a metal material such as aluminum (Al), stainless steel (SUS), copper (Cu), or titanium (Ti), or a plastic material such as ABS resin can be used. Among them, it is preferred to use an extruded molded article obtained by using Al or an aluminum alloy which is excellent in weight and cost. At this time, in order to prevent Al corrosion, the surface is preferably processed by alumite. Further, from the viewpoint of improving the reflectance and achieving efficient use of light, the alumite processing is preferably white an acid-resistant aluminum or a transparent coating thereon.

If the transparent cover member 12 is efficiently transmitted through the light-emitting wavelength of the semiconductor light-emitting device provided in the illumination device 10, any material may be used. The transparent cover member 12 is preferably, for example, glass. Further, an acrylic resin such as an acrylate, a methacrylate polymer or a polymethyl methacrylate resin (PMMA), polycarbonate (PC) or polyethylene terephthalate (PET) may be suitable. use. Further, it is more preferable to provide an anti-reflection film with respect to the emission wavelength of the semiconductor light-emitting element on the inner side of the illumination device 10 of the transparent cover member 12.

Similarly to the exterior cover member 11, the first side cover member 13 and the second side cover member 14 may be made of any material if rigidity is applied to the illumination device 10 to prevent deformation. In other words, the first side cover member 13 may be deformed by connecting the refrigerant conduit 25 to the second pipe coupler 17 even if it is sandwiched therebetween. In addition, in the same manner, the second side cover member 14 may be deformed by connecting the refrigerant conduit 25 to the first pipe coupler 16 even when sandwiched therebetween. In these systems, a metal material such as Al, SUS, Cu, Ti, or Mo, or a plastic material such as ABS can be used. It may also be a die casting of Al which is excellent in weight. Next, it is preferable that the first side cover 13 and the second side cover 14 are provided with recesses in such a manner that the end portions of the cover member 11 and the transparent cover member 12 are insertable.

Next, it is preferable that the illuminating device 10 is filled with dry air, dry nitrogen, or the like so that the moisture-containing air (outer air) does not enter the inside of the illuminating device 10 from the outside, and becomes an exterior cover member 11 and transparent. The portion of the cover member 12, the first side cover member 13, and the second side cover member 14 is sealed with a filler.

As described above, it is possible to suppress the deterioration of the semiconductor light-emitting device by the high-temperature and high-humidity environment in the cultivation chamber 60, or the copper foil or copper of the circuit board (the circuit board 22 of the fourth drawing (b) to be described later) on which the semiconductor light-emitting device to be described later is mounted. Silver plating on the foil, solder corrosion, etc.

Among them, a caulking material such as an anthrone may be used as the filler.

Fig. 3 is a view for explaining an example of the first pipe coupler 16 and the second pipe coupler 17. In the plant cultivation system 1 to which the present embodiment is applied, as shown in Fig. 1, the plurality of illumination devices 10 are coupled to the first pipe coupler 16 and the second pipe coupler 17 to be coupled.

In the third drawing, the state in which the first pipe coupler 16 is fitted to the second pipe coupler 17 is shown.

Among them, the first pipe coupler 16 and the second pipe coupler 17 are all rotationally symmetric bodies. Therefore, the upper side of the first pipe coupler 16 and the second pipe coupler 17 shown in FIG. 3 shows a cross section of the surface including the axis of symmetry. Next, the outer shape of the first pipe coupler 16 and the second pipe coupler 17 is shown on the lower side of FIG.

The first pipe coupler 16 is a cylindrical cylindrical symmetry body having a hollow inside, and a hexagonal nut is formed at one end portion thereof so that the female screw can be rotated so as to be connectable to the refrigerant pipe 25. Next, the other end portion of the first pipe coupler 16 is provided with a movable ring 16b that is incorporated in the first pipe coupler body 16a and slid in the axial direction, and is sandwiched between the first pipe coupler body 16a and the movable ring 16b. A claw portion 16c having a spring action therebetween; and a spring coil 16d provided between the first pipe coupler body 16a and the movable ring 16b to suppress the movement of the movable ring 16b.

On the other hand, the second pipe coupler 17 is a hollow cylindrical symmetry body having a hollow inside, and a hexagonal nut is formed at one end portion of the second pipe coupler body 17a so as to be connectable to the refrigerant pipe 25. The female screw is turned. Then, the other end portion of the second pipe coupler body 17a is formed into a thick portion that can be fitted into the inner side of the first pipe coupler body 16a, and is provided at the front end portion thereof with the first pipe coupler body 16a. The inner wall is joined in such a manner as to surround the O-ring 17b in the outer circumferential direction. In the portion where the second pipe coupler body 17a formed between the hexagonal nut and the O-ring 17b of the second pipe coupler body 17a is thinned, a groove 17c that is formed in the outer circumferential direction is formed.

When the portion where the second pipe coupler 17 is tapered is inserted into the tubular portion of the first pipe coupler 16, the O-ring 17b of the second pipe coupler 17 is in close contact with the inner wall of the first pipe coupler 16, and Suppress refrigerant leakage. Then, the claw portion 16c of the first pipe coupler 16 is engaged with the groove 17c of the second pipe coupler 17, and the first pipe coupler 16 and the second pipe coupler 17 are prevented from coming off.

When the movable ring 16b is moved in the axial direction against the repulsive force of the spring coil 16d, the claw portion 16c is deformed by the action of the spring, and the engagement between the claw portion 16c and the groove 17c is relaxed, thereby making the first pipe The coupler 16 and the second pipe coupler 17 are easily detached.

As a result, the connection of the plurality of illumination devices 10 becomes easier, and the connection is released, and the configuration of the plant cultivation system 1 is changed.

In the first pipe coupler 16 and the second pipe coupler 17, those obtained by using a metal material such as SUS or a copper alloy, or a plastic material obtained by ABS resin or the like can be used.

In the present embodiment, the first pipe coupler 16 and the second pipe coupler 17 are used in the present embodiment, but the present invention is not limited thereto. For example, a hose mounting port may be provided at an end portion where the refrigerant conduit 25 is extended, and the hose may be connected to the refrigerant conduit 25 (adjacent refrigerant conduit) of the adjacent illuminating device 10 by a hose. Further, the refrigerant conduit 25 and the adjacent refrigerant conduit may be fixed to the top with the gasket interposed therebetween.

Fig. 4 is a view for explaining an example of the inside of the lighting device 10. Fig. 4(a) shows the inside of the illuminating device 10 after the transparent cover member 12 of the illuminating device 10 shown in Fig. 2(b) is removed. Fig. 4(b) is a cross-sectional view taken along line IVB-IVB of Fig. 4(a).

As shown in FIG. 4(b), the illuminating device 10 includes a light-emitting element package 21 on which a semiconductor light-emitting element (a first semiconductor light-emitting element 64a and a second semiconductor light-emitting element 64b in FIG. 5 described later) is mounted; The circuit board 22 of the light-emitting element package 21; the heat-releasing substrate 24 of the fixed circuit board 22; and the film-shaped insulating heat-dissipating material 23 which electrically insulates the circuit board 22 from the heat-releasing board|substrate 24 and is excellent in thermal conductivity. Next, the light-emitting element package 21 is provided to face the transparent cover member 12 so that the light generated by the transparent cover member 12 is emitted.

Further, the illumination device 10 is provided with a reflector 26 that sets the direction in which light is emitted by the transparent cover member 12 of the illumination device 10 in a direction in which the light from the semiconductor light-emitting device of the light-emitting element package 21 is emitted in the vertical direction.

In the circuit board 22, as shown in FIG. 4(a), the plurality of light-emitting element packages 21 are arranged in three rows in the longitudinal direction. Next, for example, the reflector 26 that forms the reflecting surface 27 belonging to the paraboloid of revolution is formed so as to surround the light-emitting element packages 21, and three rows are provided corresponding to the columns of the light-emitting element packages 21.

In the fourth embodiment, the three light-emitting element packages 21 are arranged on the circuit board 22, but the number is not limited thereto. Next, the circuit board 22 is composed of one substrate, but may be a substrate divided into rows. Further, the circuit board 22 is formed as a single substrate that is connected to the longitudinal direction of the illumination device 10, but may be divided into a plurality of substrates in the longitudinal direction.

In the circuit board 22, a glass epoxy substrate in which a copper foil is provided with a glass epoxy in a glass cloth, or a ceramic having a thick film wiring obtained by Ag or the like can be used. Among them, in terms of cost, glass epoxy is preferred.

The light emitting element package 21 can also be mounted on the circuit board 22 by, for example, solder.

The illumination control wiring 31 is connected to the surface (semiconductor light-emitting element mounting surface) of the circuit board 22 so as to supply electric power for light emission to the semiconductor light-emitting element. The illumination control wiring 31 is pulled out to the back surface of the heat radiation substrate 24 through an opening provided in a portion of the heat radiation substrate 24. Then, the illumination control wiring 31 is connected to the rear surface of the heat radiation substrate 24, and is pulled out to the outside of the casing as the illumination control wiring 31, and is connected to the illumination control unit 30 provided outside the cultivation chamber 60.

The illumination control wiring 31 may be a vinyl coated copper wire.

In Fig. 4, the reflector 26 is connected to the longitudinal direction of the illumination device 10, and is arranged in a row of three rows of light-emitting element packages 21. However, the reflector 26 may be provided for each of the light emitting element packages 21. Further, it may be a plurality of reflectors 26 that are divided in the longitudinal direction. Next, in Fig. 4, the reflector 26 is provided for each row of the three rows of light-emitting element packages 21, but it is also possible to form three rows without being divided. That is, the reflector 26 may emit light generated by the semiconductor light emitting element of the illumination device 10 in a vertical direction with respect to the transparent cover member 12 of the illumination device 10.

In the case of the reflector 26, an Al block provided with, for example, an opening whose cross section is a parabola can be used. The wall portion of the opening serves as the reflecting surface 27. In addition, a resin such as acrylic having a wall portion as an opening of the reflecting surface 27 may be used, and a metal film such as Al or Ag may be formed by a vapor deposition method or the like.

Among them, the amount of light in the vertical direction is larger by the reflector 26 when the finger is released in the vertical direction with respect to the transparent cover member 12 than when the reflector 26 is not provided.

The heat radiation substrate 24 is configured to discharge heat generated by the light emission of the semiconductor light-emitting element to a substrate outside the cultivation chamber 60, and is configured by a material having a good thermal conductivity, and includes a refrigerant conduit 25.

The refrigerant conduit 25 is configured to be in close contact with the catheter insertion portion of the heat radiation substrate 24. When only the insertion is performed, the heat transfer efficiency is inferior. Therefore, the inserted catheter is expanded by the compressed air, and is formed by a catheter extraction process in close contact with the catheter insertion portion of the heat radiation substrate 24. Therefore, heat from the semiconductor light-emitting element mounted on the circuit board 22 is transmitted to the refrigerant conduit 25 via the heat radiation substrate 24, and is discharged to the outside of the cultivation chamber 60 by the refrigerant. On the other hand, the refrigerant that has flowed through the refrigerant pipe 25 cools the heat radiation substrate 24, and cools the light-emitting element package 21 mounted on the circuit board 22 that is disposed in close contact with the heat radiation substrate 24. Therefore, since the heat from the semiconductor light emitting element is not discharged into the cultivation chamber 60, the temperature and humidity in the cultivation chamber 60 can be controlled irrespective of the heat generated by the semiconductor light emitting element.

Therefore, the number of the light-emitting element packages 21 that can be mounted on the circuit board 22 is determined by the cooling capacity determined by the temperature of the refrigerant, the flow rate, and the like, and the amount of heat generated by the semiconductor light-emitting element. In particular, the length in the direction perpendicular to the refrigerant flow direction of the refrigerant conduit 25 (the width of the circuit board 22) is limited by the heat radiation characteristics such as the thermal impedance of the heat radiation substrate 24.

In the heat-releasing substrate 24, Al or Cu having excellent thermal conductivity can be used. In particular, the refrigerant conduit 25 is preferably Cu which is not easily corroded.

In order to improve the heat radiation, a bonding pad of the circuit board 22 on which the lead of the wafer is mounted is mounted on the light-emitting element package 21, and a through hole penetrating through the back surface of the circuit board 22 is formed, and the copper is transmitted through the plating metal to the back surface of the circuit board 22. Foil connection is preferred. Of course, the back surface of the circuit board 22 should also be patterned so that the semiconductor light-emitting elements are not short-circuited.

Here, as shown in Fig. 4(b), the refrigerant conduit 25 is not disposed in contact with the exterior cover member 11 or the like. Next, in the lighting device 10, as described above, dry air, dry nitrogen, or the like is filled. Therefore, even if the refrigerant pipe 25 is supplied with a refrigerant having a temperature lower than the temperature of the cultivation chamber 60, the refrigerant pipe 25 and the heat radiation substrate 24 to which the refrigerant pipe 25 is attached may be used to suppress the circuit board 22, the light-emitting element package 21, and the like. Part condensation. Thereby, the refrigerant conduit 25 and the heat radiation substrate 24 can suppress corrosion of the circuit board 22, the light-emitting element package 21, and other components due to moisture or condensation.

The insulating heat releasing members 23 are disposed in close contact with each other between the circuit board 22 and the heat radiating substrate 24, and are electrically insulated, and are provided to conduct heat generated by the circuit board 22 to the heat radiating substrate 24. The refrigerant conduit 25 provided in close contact with the heat radiation substrate 24 is connected to the first pipe coupler 16 and the second pipe coupler 17 as described above. The first pipe coupler 16 and the second pipe coupler 17 are provided outside the illuminating device 10 . Therefore, an operator engaged in plant cultivation or the like may come into contact with the first pipe coupler 16 or the second pipe coupler 17. Therefore, in order to prevent electric shock, current cannot flow through the first pipe coupler 16 and the second pipe coupler 17. Therefore, the heat release substrate 24 must be electrically insulated from the circuit substrate 22.

The insulating heat releasing material 23 electrically insulates the circuit board 22 from the heat radiating substrate 24, and conducts heat generated by the semiconductor light emitting element on the circuit board 22 to the heat radiating substrate 24. Therefore, the insulating heat releasing material 23 is preferably a film having flexibility, high electrical insulating resistance, and low thermal resistance so that the circuit board 22 and the heat radiating substrate 24 are easily adhered to each other. As the film as shown above, polyethylene terephthalate (PET), polyethylene (PE), or the like can be used.

The circuit board 22 and the heat radiation substrate 24 may be fixed to a portion where the wiring of the circuit board 22 is not provided, and may be fixed by screws or the like.

The reflector 26 is also transmitted through the circuit board 22, and is fixed to the heat radiation substrate 24 by screws or the like. At this time, the insulation distance between the pattern of the circuit substrate 22 and the mounting screws should be noted so as not to leak to the mounting screws.

Next, as shown in FIG. 4(b), the heat radiation substrate 24 can be fixed by being inserted into a slit provided in the exterior cover member 11, or the like.

The refrigerant conduit 25 shown in Fig. 4(b) is connected to the first pipe coupler 16 and the second pipe coupler 17. In this case, when a pipe is required between the heat radiation substrate 24 to the first pipe coupler 16 and the second pipe coupler 17, an additional screw may be provided in a pipe such as Cu. If the refrigerant is not leaking, the refrigerant may be circulated in the plurality of illumination devices 10.

The illuminating device 10 has, by way of example, a length of 1200 mm, a width of 100 mm, and a depth of 45 mm. Next, the diameter of the refrigerant conduit 25 is 12 mm. However, it is not limited to this shape, and may be formed into other values.

Fig. 5 is a view showing an example of the configuration of the light-emitting element package 21 used in the present embodiment. Here, Fig. 5(a) shows a top view of the light emitting element package 21, and Fig. 5(b) shows a VB-VB cross-sectional view of Fig. 5(a).

The light-emitting element package 21 includes a resin container 61 having a concave portion 61a formed in a planar opening surface 71, and anode lead portions 62a and 62b and a cathode formed of a lead frame integrated with the resin container 61. The lead portions 63a and 63b and the first semiconductor light-emitting element 64a and the second semiconductor light-emitting element 64b which are examples of the light-emitting elements are mounted on the bottom surface 70 of the concave portion 61a. In other words, in the light-emitting element package 21, the first semiconductor light-emitting element 64a and the second semiconductor light-emitting element 64b are mounted in a single 2in1 package. Next, as an example, the first semiconductor light-emitting element 64a is a blue light-emitting element having an emission peak wavelength of 450 nm. On the other hand, the second semiconductor light-emitting element 64b is a red light-emitting element having an emission peak wavelength of 660 nm.

In the first semiconductor light-emitting device 64a, an emission peak wavelength of 400 to 500 nm can be used. Further, in the second semiconductor light-emitting device 64b, an emission peak wavelength of 655 to 675 nm can be used. Here, the illuminating peak wavelength refers to a wavelength at which the light intensity is the largest.

The resin container 61 is formed by injection molding a thermoplastic resin containing a white pigment (referred to as a white resin in the following description) to the metal lead portion including the lead portions 62a and 62b for the anode and the lead portions 63a and 63b for the cathode. .

Further, in order to be compatible with a process of applying a temperature such as solder reflow, a white resin is selected from a material that sufficiently considers heat resistance. The resin used as the substrate is most commonly used as PPA (polyphthalamide), but may be a liquid crystal polymer, an epoxy resin, polystyrene or the like. Further, in the present embodiment, in the case of PPA, nylon 4T, nylon 6T, nylon 6I, nylon 9T, and nylon M5T which are copolymers of diamine and isophthalic acid or terephthalic acid are particularly preferably used.

The recessed portion 61a provided in the resin container 61 is provided with a bottom surface 70 having a circular shape, an opening surface 71 having a circular shape in the same manner, and a wall surface 80 that is erected so that the peripheral edge of the bottom surface 70 is expanded toward the opening surface 71. Here, the bottom surface 70 is formed by the anode lead portions 62a and 62b and the cathode lead portions 63a and 63b exposed to the concave portion 61a, and the gap between the anode lead portions 62a and 62b and the cathode lead portions 63a and 63b. The resin container 61 is made of a white resin. On the other hand, the wall surface 80 is composed of a white resin constituting the resin container 61. The shape of the bottom surface 70 may be any of a circle, a rectangle, an ellipse, and a polygon. Further, the shape of the opening surface 71 may be any of a circular shape, a rectangular shape, an elliptical shape, and a polygonal shape, and may be the same as the bottom surface shape.

Each of the anode lead portions 62a and 62b and the cathode lead portions 63a and 63b is held in the resin container 61, and the other portion is exposed outside the resin container 61, and is formed to be used for the first semiconductor light-emitting element. A terminal for applying a current to the 64a and the second semiconductor light-emitting elements 64b. In the case of the surface mounting, the anode lead portions 62a and 62b and the cathode lead portions 63a and 63b are bent toward the back side of the resin container 61 and the front end thereof is disposed in the resin container as shown in Fig. 5 . The situation at the bottom of 61.

Further, the anode lead portions 62a and 62b and the cathode lead portions 63a and 63b, that is, the lead frame, have a metal plate having a thickness of about 0.1 to 0.5 mm, and a metal conductor such as a copper alloy is used as a base, and the surface thereof is used as a base. A silver plating layer is formed by silver plating.

The first semiconductor light-emitting device 64a is attached to the cathode lead portion 63a disposed on the bottom surface 70 of the concave portion 61a, and is then fixed by an adhesive agent composed of an fluorenone resin or an epoxy resin. In the same manner, the second semiconductor light-emitting device 64b is attached to the anode lead portion 62b disposed on the bottom surface 70 of the concave portion 61a, and is then fixed by an adhesive agent composed of an fluorenone resin or an epoxy resin.

In addition, an AuSn layer is formed on the back surface of the first semiconductor light-emitting device 64a via a metal layer such as Al or Ni, and is fixed to the cathode lead portion 63a disposed on the bottom surface 70 of the concave portion 61a by heat fusion. good. The same applies to the second semiconductor light-emitting element 64b.

The first semiconductor light-emitting device 64a has an n-type pad electrode and a p-type pad electrode, and the p-type pad electrode is connected to the anode lead portion 62a and the n-type pad electrode to the cathode lead through the bonding wire 65. Part 63a. Similarly, the second semiconductor light-emitting device 64b also has an n-type pad electrode and a p-type pad electrode, and the p-type pad electrode is connected to the anode lead portion 62b through the bonding wire 65, and the n-type pad electrode is connected to Lead wire portion 63b for cathode.

Among these, the light-emitting element package 21 is sealed with a sealing resin so as to fill the concave portion 61a. The sealing resin may be composed of a transparent resin that transmits light emitted from the first semiconductor light-emitting device 64a and the second semiconductor light-emitting device 64b.

For example, the transparent resin contains a curable resin which is sealed so as to cover the concave portion, a hardener which is cured, and, if necessary, an antioxidant, a discoloration preventive agent, a photodegradation preventive agent, and a reaction which are blended as needed. A diluent, an inorganic filler, a flame retardant, an organic solvent or the like is preferred.

Specific examples of the curable resin include an anthrone resin, an epoxy resin, an epoxy ketone mixed resin, an acrylic resin, and a polyimide resin. Among them, from the viewpoint of heat resistance, an anthrone resin or an epoxy resin is preferable, and an anthrone resin is particularly preferable.

In addition, the anode lead portions (62a, 62b) and the cathode lead portions (63a, 63b) are provided in the first semiconductor light-emitting device 64a and the second semiconductor light-emitting device 64b, respectively. Common.

Here, the light-emitting element package 21 is formed as a 2in1 package in which two first semiconductor light-emitting elements 64a and second semiconductor light-emitting elements 64b are mounted, but may be a 1in1 package in which a single wafer is mounted, or It can also be a multi-chip package. The wiring in the package in the case of multi-wafer can be formed as a parallel circuit having a common terminal at one end or both ends, and can have independent positive and negative electrodes for each wafer. In addition, a series circuit in which the wafers are connected in series in the package body may be formed.

Next, an example of the first semiconductor light-emitting device 64a (blue light-emitting device) and the second semiconductor light-emitting device 64b (red light-emitting device) will be described. The structures and numerical values shown below are representative structures and numerical values, and are not limited to the structures and numerical values shown herein.

<Blue light-emitting element>

Fig. 6 is a cross-sectional view showing an example of the configuration of the first semiconductor light-emitting device 64a for blue light emission used in the present embodiment. Fig. 7 is a top view of the first semiconductor light-emitting element 64a that emits blue light. Here, the first semiconductor light-emitting element 64a that emits blue light having an emission peak wavelength of 450 nm will be described.

As shown in FIG. 6, the first semiconductor light-emitting device 64a includes a first substrate 110, an intermediate layer 120 laminated on the first substrate 110, and a base layer 130 laminated on the intermediate layer 120. Further, the first semiconductor light-emitting device 64a includes a first n-type semiconductor layer 140 laminated on the underlying layer 130, a first light-emitting layer 150 laminated on the first n-type semiconductor layer 140, and a first layer. The first p-type semiconductor layer 160 on the light-emitting layer 150. In the following description, the first n-type semiconductor layer 140, the first light-emitting layer 150, and the first p-type semiconductor layer 160 are collectively referred to as a first laminated semiconductor layer 100 as needed. Further, the first semiconductor light-emitting device 64a includes a transparent electrode 170 that is laminated on the first p-type semiconductor layer 160 and that transmits light generated by the first light-emitting layer 150. Next, the first semiconductor light-emitting device 64a includes a first bonding pad electrode 210 which is laminated on the upper surface 170c of the transparent electrode 170 and serves as a p-type pad electrode. In addition, the first semiconductor light-emitting device 64a is provided with a first n-type which is exposed by forming a slit in a part of the first p-type semiconductor layer 160, the first light-emitting layer 150, and the first n-type semiconductor layer 140. A portion of the semiconductor layer 140 on the semiconductor layer exposed surface 140c serves as a second bonding pad electrode 240 of an n-type pad electrode.

In addition, the first semiconductor light-emitting device 64a includes the first n-type semiconductor layer 140, the first light-emitting layer 150, and the first p-layer except for a part of the surface of the first bonding pad electrode 210 and the second bonding pad electrode 240. The first protective layer 180 of the semiconductor layer 160 and the transparent electrode 170.

The first semiconductor light-emitting device 64a is subsequently fixed to the cathode lead portion 63a as described above, and the first bonding pad electrode 210 is connected to the anode lead portion 62a of the lead frame by the bonding wire 65. Next, the second bonding pad electrode 240 is connected to the cathode lead portion 63a of the lead frame by bonding the wires 65.

The first bonding pad electrode 210 is a positive electrode, and the second bonding pad electrode 240 is a negative electrode, and the first laminated semiconductor layer 100 (specifically, the first p-type semiconductor layer 160, the first light-emitting layer 150, and the first layer) The 1n-type semiconductor layer 140) causes a current to flow, thereby causing the first light-emitting layer 150 to emit light. Then, the generated light is taken out to the outside of the first semiconductor light-emitting element 64a by the upper surface of the transparent electrode 170 on which the first bonding pad electrode 210 is not provided.

In addition, the configuration of the first semiconductor light-emitting device 64a, the method of manufacturing the same, and the like can be carried out, for example, in Japanese Patent Laid-Open Publication No. 2009-123718.

Further, in the present embodiment, as shown in FIG. 6, the first protective layer 180 made of cerium oxide such as SiO ₂ may be coated on the transparent electrode 170 and the first p-type semiconductor layer 160. The upper surface of the semiconductor layer exposed surface 140c of the 1n-type semiconductor layer 140 (including the etched sidewall), the peripheral portion of the first bonding pad electrode 210, and the peripheral portion of the second bonding pad electrode 240 are formed. .

Thereby, in addition to the upper surface of the bonding pad electrodes (210, 240), the first semiconductor light emitting element 64a can be shielded, and the external air or moisture can be greatly reduced in the first semiconductor light emitting element 64a. It is possible to prevent the transparent electrode 170 or the bonding pad electrodes (210, 240) of the first semiconductor light emitting element 64a from being peeled off.

The thickness of the first protective layer 180 is preferably 50 to 1000 nm, more preferably 100 to 500 nm, and still more preferably 150 to 450 nm.

The thickness of the first protective layer 180 is 50 to 1000 nm, and it is possible to reduce the possibility that external air or moisture is infiltrated into the first light-emitting layer 150 of the first semiconductor light-emitting device 64a, thereby preventing the first semiconductor light-emitting element 64a. The first bonding pad electrode 210 or the second bonding pad electrode 240 is peeled off.

Next, the method of forming the first protective layer 180 is, for example, first on the transparent electrode 170, the first p-type semiconductor layer 160, and the semiconductor layer exposed surface 140c of the first n-type semiconductor layer 140 (including the side wall to be etched), and the first After the first protective layer 180 made of SiO ₂ is formed on the surface of the bonding pad electrode 210 and the surface of the second bonding pad electrode 240, a resist (not shown) is applied to the first protective layer 180.

Then, the resist of a part of the surfaces of the first bonding pad electrode 210 and the second bonding pad electrode 240 is removed, and the first protective layer 180 is removed by a known etching method, thereby making the surfaces of the respective electrodes Part of it is exposed.

The first semiconductor light emitting element 64a is manufactured as described above.

<red light emitting element>

Fig. 8 is a cross-sectional view showing an example of the configuration of the second semiconductor light-emitting device 64b for red light emission used in the present embodiment. Fig. 9 is a top view of the second semiconductor light-emitting element 64b that emits red light. Here, the second semiconductor light-emitting element 64b that emits red light having an emission peak wavelength of 660 nm will be described. The cross-sectional view of the second semiconductor light-emitting device 64b shown in Fig. 8 corresponds to a cross-sectional view taken along line VIII-VIII of the top view in Fig. 9.

As shown in FIG. 8, the second semiconductor light-emitting device 64b is configured by bonding the second laminated semiconductor layer 300 and the second substrate 310. Then, the second laminated semiconductor layer 300 is sequentially laminated with the deformation adjusting layer 320, the second p-type semiconductor layer 330 functioning as the lower cladding layer, the second light-emitting layer 340, and the upper cladding layer. The second n-type semiconductor layer 350 is formed.

Next, the second semiconductor light-emitting device 64b includes a third bonding pad electrode 400 that is formed on the upper surface 350c of the second n-type semiconductor layer 350 and functions as an n-type pad electrode, and is formed by the second bonding pad electrode 400. The second n-type semiconductor layer 350, the second light-emitting layer 340, and the second p-type semiconductor layer 330 of the laminated semiconductor layer 300 are formed as a p-type pad electrode by the upper surface 320c of the deformation-adjusting layer 320 exposed by the slit. 4 Bond pad electrode 410.

As shown in FIG. 9, the third bonding pad electrode 400 is connected to the second n-type semiconductor layer 350, and is connected to, for example, a wiring 401 formed in a lattice shape. The wiring 401 is formed of a thin wire so as not to affect the extraction of light from the second n-type semiconductor layer 350 by the same material as the third bonding pad electrode 400. Thereby, the potential distribution of the second n-type semiconductor layer 350 is formed to be more uniform than that in the case where the wiring 401 is not provided, and the light emission distribution of the second light-emitting layer 340 is uniformized.

In addition, the second semiconductor light-emitting device 64b includes a portion of the surface of the third bonding pad electrode 400 and the fourth bonding pad electrode 410, and covers the deformation adjusting layer 320, the second p-type semiconductor layer 330, and the second light-emitting layer. The layer 340 and the second protective layer 360 of the second n-type semiconductor layer 350.

In the second semiconductor light-emitting device 64b, the third bonding pad electrode 400 is a negative electrode, the fourth bonding pad electrode 410 is a positive electrode, and both of them are passed through the second laminated semiconductor layer 300 (more specifically, The second light-emitting layer 340 emits light by flowing a current through the second p-type semiconductor layer 330, the second light-emitting layer 340, and the second n-type semiconductor layer 350). Then, the light generated is taken out from the upper surface of the second n-type semiconductor layer 350 where the third bonding pad electrode 400 and the wiring 401 are not provided, or the side surface of the second substrate 310, and is taken out to the outside of the second semiconductor light-emitting device 64b. .

The configuration of the second semiconductor light-emitting device 64b will be described in more detail below.

(second substrate)

As shown in FIG. 8, the second substrate 310 is bonded to the deformation adjustment layer 320 constituting the second laminated semiconductor layer 300. The second substrate 310 has sufficient strength to mechanically support the second light-emitting layer 340, and transmits light emitted from the second light-emitting layer 340 so that the band gap energy is wide and the pair is from the second light-emitting layer 340. The wavelength of the light is made of an optically transparent material. For example, a Group III-VI compound such as gallium phosphide (GaP), aluminum telluride ‧ gallium (AlGaAs), gallium nitride (GaN), or a group III-VI compound such as zinc sulfide (ZnS) or zinc selenide (ZnSe) A semiconductor crystal body, or a group IV semiconductor crystal such as hexagonal or cubic silicon carbide (SiC), or an insulating substrate such as glass or sapphire.

On the other hand, a functional substrate having a surface having a high reflectance on the joint surface can be selected. For example, a metal substrate or an alloy substrate in which silver, gold, copper, aluminum, or the like is formed on the surface, or a composite substrate in which a metal mirror structure is formed in a semiconductor may be selected.

Next, the second substrate 310 is preferably formed to have a thickness of, for example, 50 μm or more, and the second light-emitting layer 340 is supported by mechanical strength. Further, in order to facilitate the mechanical processing of the second substrate 310 after bonding to the second laminated semiconductor layer 300, it is preferable to form a thickness of not more than 300 μm. In other words, the second substrate 310 is preferably made of an n-type GaP substrate having a thickness of 50 μm or more and 300 μm or less.

Further, as shown in Fig. 8, the side surface of the second substrate 310 is on the side close to the second laminated semiconductor layer 300, and constitutes a substantially vertical vertical surface 310a with respect to the upper surface of the second n-type semiconductor layer 350 belonging to the light extraction surface. On the side away from the second laminated semiconductor layer 300, an inclined surface 310b which is inclined toward the inner side of the second substrate 310 is formed. Thereby, the light emitted from the second light-emitting layer 340 to the side of the second substrate 310 can be taken out efficiently. In other words, among the light emitted from the second light-emitting layer 340 to the second substrate 310 side, the light reflected on the vertical surface 310a can be taken out by the inclined surface 310b. On the other hand, the light reflected on the inclined surface 310b can be taken out by the vertical surface 310a. As described above, the light extraction efficiency can be improved by the multiplication effect of the vertical surface 310a and the inclined surface 310b.

In the present embodiment, it is preferable that the angle α formed between the inclined surface 310b and the surface parallel to the upper surface of the second n-type semiconductor layer 350 belonging to the light extraction surface is in the range of 55 to 80 degrees. By forming the range as described above, light reflected on the bottom surface 310c of the second substrate 310 can be efficiently taken out to the outside.

Further, it is preferable that the thickness of a portion of the vertical surface 310a of the second substrate 310 be 30 to 100 μm. By setting the thickness of the vertical surface 310a within this range, the light reflected on the bottom surface 310c of the second substrate 310 can be efficiently returned to the light-emitting surface on the vertical surface 310a, and the second n-type semiconductor belonging to the light extraction surface can be used. The upper surface of the layer 350 (the portion where the third bonding pad electrode 400 is not formed) is discharged. Thereby, the luminous efficiency of the second semiconductor light-emitting element 64b can be improved.

Further, the inclined surface 310b of the second substrate 310 is preferably roughened. When the inclined surface 310b is roughened, it is possible to suppress the total reflection on the inclined surface 310b and to enhance the light extraction efficiency from the inclined surface 310b.

(deformation adjustment layer)

In the present embodiment, the deformation adjustment layer 320 is provided between the second substrate 310 and the second p-type semiconductor layer 330. Since the distortion adjustment layer 320 is transparent to the emission wavelength from the second light-emitting layer 340, it does not absorb light, and can be formed into the second semiconductor light-emitting element 64b having high output and high efficiency.

The deformation adjustment layer 320 has a lattice constant smaller than a lattice constant of a GaAs substrate (not shown) used in forming the second laminated semiconductor layer 300. Therefore, warpage of the second laminated semiconductor layer 300 can be suppressed. By this, it is possible to form the second semiconductor light-emitting element 64b having excellent monochromaticity by reducing the unevenness in the second light-emitting layer 340 which is the amount of deformation of the deformed light-emitting layer provided in the second light-emitting layer 340.

The deformation adjusting layer 320 is, for example, a p-type GaP having a carrier concentration of Mg of about 3×10 ¹⁸ /cm ³ and a thickness of about 9 μm.

(2p-type semiconductor layer)

The second p-type semiconductor layer 330 functioning as the lower cladding layer is provided between the deformation adjustment layer 320 and the second light-emitting layer 340. The second p-type semiconductor layer 330 is, for example, doped with Mg (Al _0.7 Ga _0.3 ) _0.5 In _0.5 P, has a carrier concentration of about 8 × 10 ¹⁷ /cm ³ , and has a thickness of about 0.5 μm.

Further, for example, (Al _0.5 Ga _0.5 ) _0.5 In _0.5 P may be provided between the deformation adjustment layer 320 and the second p-type semiconductor layer 330, the carrier concentration is about 8×10 ¹⁷ /cm ³ , and the thickness is about 0.05 μm. middle layer.

(2nd luminescent layer)

A second light-emitting layer 340 that emits light is provided between the second p-type semiconductor layer 330 and the second n-type semiconductor layer 350. The second light-emitting layer 340 is preferably formed in a range of 655 to 675 nm in which the peak emission wavelength of the emission spectrum is 655 to 675 nm, and more preferably in the range of 660 to 670 nm. The emission wavelength in the above range is suitable for one of the emission wavelengths of the light source for plant growth (photosynthesis), and the reaction efficiency for photo synthesis is high.

On the other hand, a long wavelength system of 700 nm or more causes a reaction for inhibiting plant growth. Therefore, the amount of light in the long wavelength range is preferably small. Therefore, in order to efficiently carry out plant growth, it is preferable that the light source in the wavelength range of 655 to 675 nm which is optimal for the photosynthetic reaction is strong, and the red light source which does not contain light having a long wavelength of 700 nm or more is preferable. Thus, in order to form a preferred red light source, the half value width must be narrow.

Based on these cases, the half value width of the light emission spectrum is preferably 10 to 40 nm, and the light emission intensity at an emission wavelength of 700 nm is preferably 10% of the light emission intensity in the peak emission wavelength.

The second light-emitting layer 340 is formed by alternately laminating a deformed light-emitting layer and a barrier layer. The deformed light-emitting layer is, for example, undoped Ga _0.44 In _0.56 P having a thickness of about 17 nm, and the barrier layer is, for example, undoped (Al _0.53 Ga _0.47 ) _0.5 In _0.5 P having a thickness of about 19 nm. Next, the deformed light-emitting layer and the barrier layer are alternately laminated, for example, 22 pairs.

(2n-type semiconductor layer)

The second n-type semiconductor layer 350 functioning as an upper cladding layer is provided on the upper surface of the second light-emitting layer 340.

The second n-type semiconductor layer 350 is, for example, (Al _0.7 Ga _0.3 ) _0.5 In _0.5 P having a carrier concentration of Si of about 1 × 10 ¹⁸ /cm ³ and a thickness of about 0.5 μm.

Further, an n-type contact layer may be provided on the upper surface of the second n-type semiconductor layer 350, which has a carrier concentration of, for example, doped Si of about 2×10 ¹⁸ /cm ³ and a thickness of about 3.5 μm (Al _0.7 Ga _0.3 ). _0.5 In _0.5 P.

(3rd bonding pad electrode and 4th bonding pad electrode)

The third bonding pad electrode 400 belonging to the n-type pad electrode is provided on the upper surface 350c of the second n-type semiconductor layer 350, and an alloy made of, for example, AuGe or Ni alloy/Au can be used.

On the other hand, the fourth bonding pad electrode 410 belonging to the p-type pad electrode is provided on the upper surface 320c of the exposed deformation adjusting layer 320, and an alloy made of, for example, AuBe/Au can be used.

The second semiconductor light-emitting device 64b can be manufactured as follows.

First, the second laminated semiconductor layer 300 is sequentially laminated on a GaAs substrate made of a single crystal of n-type GaAs doped with Si. The GaAs substrate has a surface inclined by 15° from the (100) plane toward the (0-1-1) direction as a growth surface, and the carrier concentration is 2 × 10 ¹⁸ /cm ³ .

On the GaAs substrate, the second layered semiconductor layer 300 is formed in the order of the second n-type semiconductor layer 350, the second light-emitting layer 340, the second p-type semiconductor layer 330, and the deformation adjustment layer 320.

Further, n may be formed between the GaAs substrate and the second laminated semiconductor layer 300 by, for example, GaAs doped with Si at a carrier concentration of about 2 × 10 ¹⁸ /cm ³ and a thickness of about 0.5 μm. Type buffer layer.

In the present embodiment, the second laminated semiconductor layer 300 is epitaxially grown on a GaAs substrate having a diameter of 76 mm and a thickness of 350 μm by a reduced pressure metalorganic chemical vapor deposition (MOCVD) method. When it is used for epitaxial growth, trimethylaluminum ((CH ₃ ) ₂ Al), trimethylgallium ((CH ₃ ) ₃ Ga), and trimethyl group can be used as the raw material of the group III constituent element. Indium ((CH ₃ ) ₃ In). Further, in the case of a doping raw material of Mg, bis(cyclopentadienyl)magnesium (bis-(C ₅ H ₅ ) ₂ Mg) can be used. Further, in the case of a doping raw material of Si, dioxane (Si ₂ H ₆ ) can be used. Next, phosphorus trihydrate (PH ₃ ) or arsine (AsH ₃ ) can be used as a raw material of the group V constituent element. Further, the deformation adjusting layer 320 composed of p-type GaP was grown at 750 ° C in terms of the growth temperature of each layer, and the other layers were grown at 700 ° C.

Next, the deformation adjustment layer 320 is mirror-finished by honing the surface to a depth of about 1 μm. On the other hand, the second substrate 310 made of n-type GaP is attached to the surface of the deformation-adjusting layer 320 which is mirror-honed. The second substrate 310 has, for example, a diameter of 76 mm and a thickness of 250 μm. Next, the second substrate 310 is doped with a single crystal substrate of a (111) plane of Si so that the carrier concentration is about 2 × 10 ¹⁷ /cm ³ . Further, the surface of the second substrate 310 is honed to a mirror surface before being bonded to the deformation adjustment layer 320.

Then, the semiconductor substrate is placed in the second substrate 310 and the GaAs substrate on which the second layered semiconductor layer 300 is formed, and the semiconductor material is adhered to the device, for example, to 3 × 10 ^-5 Pa. vacuum.

After that, the surface of the deformation adjusting layer 320 of the second substrate 310 and the second laminated semiconductor layer 300 is irradiated with electrons for 3 minutes, for example, and is neutralized to form a neutral Ar beam, which is adsorbed on both surfaces. Gas and the like are removed.

After that, in the semiconductor material adhering device that maintains the vacuum, the second substrate 310 and the surface of the deformation adjusting layer 320 of the second laminated semiconductor layer 300 are superposed on each other, and the load is applied to the chamber so that the pressure is 50 g/cm ² . Engage at a temperature.

Further, the GaAs substrate and the GaAs buffer layer are selectively removed by an ammonia-based etchant. Then, AuGe and Ni alloy were deposited as a third bonding pad electrode 400 by a vacuum deposition method so that the thickness of the contact layer was 0.5 μm, Pt was 0.2 μm, and Au was 1 μm. Thereafter, patterning is performed by well-known photolithography to form a third bonding pad electrode 400 that functions as an n-type pad electrode.

Next, the second n-type semiconductor layer 350, the second light-emitting layer 340, and the second p-type semiconductor layer 330 in the field in which the fourth bonding pad electrode 410 is formed are selectively removed, and the deformation adjustment layer 320 is exposed. The fourth bonding pad electrode 410 functioning as a p-type pad electrode is formed by vacuum deposition on the upper surface 320c of the exposed deformation adjustment layer 320 so that AuBe is formed to be 0.2 μm and Au is formed to be 1 μm.

Thereafter, the alloy was alloyed by heat treatment at 450 ° C for 10 minutes to form a third bonding pad electrode 400 and a fourth bonding pad electrode 410 which function as n-type and p-type pad electrodes with low impedance.

The second semiconductor light-emitting device 64b manufactured as described above is incorporated in the light-emitting element package 21 as shown in Fig. 5(a). In other words, the bottom surface 310c of the second semiconductor light-emitting device 64b is provided on the anode lead portion 62b of the lead frame, and the third bonding pad electrode 400 is connected to the cathode lead portion 63b by, for example, a gold bonding wire 65. The fourth bonding pad electrode 410 is connected to the anode lead portion 62a by a gold bonding wire 65. Thereby, the second substrate 310 of the n-type GaP and the third bonding pad electrode 400 are formed at the same potential.

Here, the concave portion 61a of the light-emitting element package 21 may be sealed with a general epoxy resin after wire bonding.

In the second semiconductor light-emitting device 64b that emits red light in the present embodiment, a quaternary compound semiconductor composed of AlGaInP is used. In the present specification, the description of AlGaInP or AlInP or the like also has a case where the composition ratio of each element is simply described. On the other hand, a semiconductor luminescent element that emits light of 660 nm is known as a ternary compound semiconductor using AlGaAs.

In the second semiconductor light-emitting device 64b using AlGaInP in the present embodiment, since the ratio of Al is low as compared with those using AlGaAs, it has a property of resisting corrosion due to moisture.

The first semiconductor light-emitting device 64a and the second semiconductor light-emitting device 64b are exemplified, and it is known that a semiconductor light-emitting device having a structure other than the above, and a semiconductor light-emitting device having an emission peak wavelength other than the above can be used.

As described above, in the present embodiment, the light-emitting element package 21 in which the first semiconductor light-emitting element 64a and the red-emitting second semiconductor light-emitting element 64b for blue light emission required for plant growth are mounted is used. The lighting device 10 is manufactured.

In addition, the anode lead portions 62a and 62b and the cathode lead portions 63a and 63b of the lead frame are individually provided so that each of the first semiconductor light-emitting device 64a and the second semiconductor light-emitting device 64b can be turned on/off. Therefore, the illumination control wiring 31 is provided separately from the first semiconductor light-emitting element 64a and the second semiconductor light-emitting element 64b, whereby the photon density (optical quantum density) of red and blue can be independently controlled depending on the type of plant or the like.

In the illuminating device 10 produced as described above, the optical quantum density immediately below 20 cm is 300 μmol/m ² /sec when the average of the first semiconductor light-emitting elements 64a that emit blue light is 20 μm per one turn. When the average of the second semiconductor light-emitting elements 64b is 20 mA per one turn, it is 200 μmol/m ² /sec.

In addition, when the semiconductor light-emitting device is not lit, (I) is placed at 5 ° C for 15 minutes, (II) is heated to 60 ° C for 15 minutes, (III) is placed at 60 ° C for 15 minutes, and (IV) is cooled for 15 minutes. At 5 ° C, the temperature cycle returned to (I) was repeated for a cycle of 1000 cycles, and the inner surface of the transparent cover member 12 (glass) of the illumination device 10 was blurred, and no condensation was observed. In addition, in the environment of 30° C. and 95% RH (relative humidity), the first semiconductor light-emitting device 64a that emits blue light flows 10 mA, and the second semiconductor light-emitting device 64b that emits red light flows through 30 mA for 1000 hours. In the lighting test, rust or semiconductor light-emitting elements were not lit inside the illuminating device 10, and the optical quantum density was maintained at 98% of the initial value.

(Second embodiment)

In the first embodiment, the light-emitting element package 21 including the first semiconductor light-emitting device 64a and the second semiconductor light-emitting device 64b that emits blue light is mounted on the circuit board 22, and the circuit board 22 is additionally mounted on the heat-dissipating unit. Substrate 24. In this method, the heat generated by the first semiconductor light-emitting element 64a and the second semiconductor light-emitting element 64b is transmitted through the metal lead of the light-emitting element package 21 and the through hole of the circuit board 22, and is transmitted from the back surface of the circuit board 22 to The substrate 24 is exothermic.

The metal lead of the light-emitting element package 21 is thinner than 0.15 mm, and the thermal impedance of the light-emitting element package 21 is 100 ° C/W, which is not so low.

In the present embodiment, in order to further improve the cooling efficiency, the first semiconductor light-emitting device 64a and the second semiconductor light-emitting device 64b are directly attached to the metal base portion of the circuit substrate 32 of the metal base (COB type: Chip On Board type).

Fig. 10 is a cross-sectional view showing an example of a lighting device 20 to which the present embodiment is applied. In the same manner as the first embodiment, the illuminating device 20 includes an exterior cover member 11 that constitutes a frame, a transparent cover member 12, a first side cover member 13, and a second side cover member 14. Further, in the present embodiment, the first semiconductor light-emitting element 64a that emits blue light and the second semiconductor light-emitting element 64b that emits red light are also used.

In the present embodiment, a refrigerant conduit 25 is provided on one surface of the heat radiation substrate 24 in the same manner as in the first embodiment. Next, on the other surface of the heat radiation substrate 24, a COB type circuit board 32 is screwed through the insulating heat releasing material 23. Here, in the tenth figure, the reflector 26 is provided, but it is not necessary.

FIG. 11 is a plan view showing an example of a connection relationship between the connection wiring 520 of the circuit board 32 of the COB (Chip On Board) type and the semiconductor light emitting element (the first semiconductor light emitting element 64a and the second semiconductor light emitting element 64b). . Here, FIG. 11( a ) is a plan view showing an example of a circuit pattern which is screwed to the COB type circuit board 32 of the heat radiation substrate 24 through the insulating heat radiation material 23 . 11(b) is an enlarged view of a portion surrounded by a broken line in FIG. 11(a), showing the first semiconductor light-emitting element 64a and the second semiconductor light-emitting element 64b and the connection wiring 520 disposed on the circuit board 32. Connection relationship.

In the description of the second embodiment, the same components as those described in the first embodiment are denoted by the same reference numerals, and the detailed description thereof will be omitted.

First, in FIG. 11(a), the circuit board 32 on which the connection wiring 520 is formed will be described.

The circuit board 32 is for discharging the heat generated by the light emission of the first semiconductor light-emitting element 64a and the second semiconductor light-emitting element 64b to the substrate outside the cultivation chamber 60. Therefore, the circuit board 32 is made of a material having a good thermal conductivity.

In the circuit board 32, Al or Cu which is excellent in thermal conductivity can be used.

On the other hand, an insulating layer 510 having connection wirings 520 formed on both surfaces thereof is provided on the surface of the circuit board 32. Then, the insulating layer 510 is removed to expose the surface of the circuit board 32 so that the first semiconductor light emitting element 64a and the second semiconductor light emitting element 64b can be directly mounted on the circuit board 32, and the plurality of semiconductor light emitting element mounting portions are provided. 530. In the first embodiment, the plurality of semiconductor light-emitting device installation portions 530 are arranged in two rows at equal intervals in the longitudinal direction of the circuit board 32, and an average of 15 are arranged in each column.

Then, each of the plurality of semiconductor light-emitting element installation units 530 is disposed, for example, in a pair of the first semiconductor light-emitting elements 64a and the second semiconductor light-emitting elements 64b. The first semiconductor light-emitting element 64a and the second semiconductor light-emitting element 64b are supplied with power through the connection wiring 520. As shown in Fig. 11(a), the connection wiring 520 is specifically constituted by a wiring divided into a plurality of lines.

Next, an example of the connection relationship between the first semiconductor light-emitting device 64a, the second semiconductor light-emitting device 64b, and the connection wiring 520 will be described in FIG. 11(b).

The first semiconductor light-emitting element 64a and the second semiconductor light-emitting element 64b are paired, and the pair is disposed in the semiconductor light-emitting element installation unit 530. The first semiconductor light-emitting element 64a and the second semiconductor light-emitting element 64b are arranged side by side in the short-side direction of the circuit board 32. The first semiconductor light-emitting element 64a is disposed outside the circuit board 32, and the second semiconductor light-emitting element 64b is disposed in the circuit. The inside of the substrate 32.

Then, the first bonding pad electrode 210 of the first semiconductor light-emitting device 64a is transmitted through the connection wiring 520 on the insulating layer 510, and is connected to the second bonding pad of the other first semiconductor light-emitting device 64a disposed adjacent thereto. Electrode 240. The first bonding pad electrode 210 or the second bonding pad electrode 240 and the connection wiring 520 are connected by a bonding wire 65.

Further, it is necessary to connect the other two connection wirings 520 across the connection wiring 520, and the low-impedance wafer impedance 66 is used as the transition wiring.

As described above, the plurality of first semiconductor light-emitting elements 64a are connected in series by the connection wiring 520. Similarly, the plurality of second semiconductor light-emitting elements 64b are connected in series by the connection wiring 520. However, the plurality of first semiconductor light-emitting elements 64a and the plurality of second semiconductor light-emitting elements 64b are not connected to each other. This is because the first semiconductor light-emitting element 64a and the second semiconductor light-emitting element 64b are individually controlled for lighting.

In other words, only the second semiconductor light-emitting elements 64b arranged inside the circuit board 32 are connected in series between the connection wiring terminals 520a and 520b. On the other hand, between the connection wiring terminals 520c and 520d, only the first semiconductor light-emitting elements 64a arranged outside the circuit board 32 are connected in series of ten. Thereby, between the connection wiring terminals 520a and 520b, the illumination control unit 30 applies the forward voltage of the second semiconductor light-emitting element 64b to a voltage that is several times connected in series, and flows in the second semiconductor light-emitting element 64b. The current can thereby simultaneously turn on the plurality of second semiconductor light-emitting elements 64b connected in series. The same applies between the connection wiring terminals 520c and 520d.

In the present embodiment, as shown in FIG. 11(a), the first semiconductor light-emitting elements 64a or the second semiconductor light-emitting elements which are connected in series on the right side, the center, and the left side of the circuit board 32 are disposed. The element 64b is connected in parallel between the connection wiring terminals 520a and 520b or between the connection wiring terminals 520c and 520d. As described above, the first semiconductor light-emitting elements 64a or the second semiconductor light-emitting elements 64b connected in series are connected in parallel in plural, thereby illuminating all of the first semiconductor light-emitting elements 64a or the second semiconductor on the circuit board 32. The voltage supplied to the first semiconductor light-emitting element 64a or the second semiconductor light-emitting element 64b can be suppressed to be lower than that in the case where the elements 64b are connected in series.

Fig. 12 is a view showing a COB (Chip On Board) (COB) type circuit board 32 in which semiconductor light-emitting elements (first semiconductor light-emitting elements 64a and second semiconductor light-emitting elements 64b) are directly mounted in the present embodiment. Fig. 12(a) is a plan view showing a part of a semiconductor light emitting element mounting portion 530 in an enlarged manner. Fig. 12(b) is a cross-sectional view taken along line XIIB-XIIB of Fig. 12(a).

An insulating layer 510 on which the connection wiring 520 is formed is provided on both surfaces of the circuit board 32. Next, the insulating layer 510 is removed in the semiconductor light emitting element mounting portion 530 in which the first semiconductor light emitting element 64a and the second semiconductor light emitting element 64b are provided, so as to expose the circuit board 32.

The first semiconductor light emitting element 64a and the second semiconductor light emitting element 64b are disposed on the circuit board 32 on which the semiconductor light emitting element mounting portion 530 is exposed. Then, the first bonding pad electrode 210 and the second bonding pad electrode 240 of the first semiconductor light emitting element 64a are connected to the connection wiring 520 formed on the insulating layer 510 by bonding the wires 65. Similarly, the third bonding pad electrode 400 and the fourth bonding pad electrode 410 of the second semiconductor light emitting element 64b are connected to the connection wiring 520 by the bonding wires 65, respectively.

As shown in FIG. 12(b), the insulating layer 510 (including the connection wiring 520 formed on both surfaces of the insulating layer 510) is laminated on the circuit board 32 via the bonding layer 540. Then, the portion of the insulating layer 510 that becomes the semiconductor light-emitting element mounting portion 530 is removed such that its side surface is, for example, conical, and the circuit board 32 is exposed.

The material of the insulating layer 510 is also not limited, and any well-known person such as a resin or a ceramic can be used arbitrarily. In particular, it is preferred that the epoxy resin is impregnated with glass epoxy of the glass cloth.

The material of the connection wiring 520 is also not limited, and any known person such as Cu or Al can be used arbitrarily.

Next, if the layer 540 is also bondable to both the circuit board 32 and the insulating layer 510, the material is not limited. It is also possible to bond to the circuit board 32 by hot pressing using a hot melt adhesive such as an epoxy resin. It is also possible to attach to the circuit board 32 using an adhesive adhesive.

Here, although the connection wiring 520 is formed on both surfaces of the insulating layer 510, the connection wiring 520 may be formed only on one surface.

The first semiconductor light-emitting element 64a and the second semiconductor light-emitting element 64b are fixed to the circuit board 32 by, for example, a resin. In addition, it is more preferable that the AuSn layer is formed on the back surface of the first semiconductor light-emitting device 64a via a metal layer such as Al or Ni, and is fixed to the surface of the circuit board 32 by heat fusion. The same applies to the second semiconductor light-emitting element 64b.

Next, the respective n-type pad electrodes and p-type pad electrodes and the connection wiring 520 are connected by a bonding wire 65 such as gold.

Next, the sealing resin 550 is provided in the semiconductor light emitting element mounting portion 530 so as to cover the first semiconductor light emitting element 64a and the second semiconductor light emitting element 64b and the bonding wires 65. The sealing resin 550 may be formed of a transparent resin that transmits light emitted from the first semiconductor light-emitting device 64a and the second semiconductor light-emitting device 64b as described above. The transparent resin contains a curable resin that is sealed so as to cover the concave portion, a hardener that is cured, and, if necessary, an antioxidant, a discoloration preventive agent, a photodegradation preventive agent, and a reactive dilution. A solvent, an inorganic filler, a flame retardant, an organic solvent or the like is preferred. Specific examples of the curable resin include an anthrone resin, an epoxy resin, an epoxy ketone mixed resin, an acrylic resin, and a polyimide resin. Among them, from the viewpoint of heat resistance, an anthrone resin or an epoxy resin is preferable, and an anthrone resin is particularly preferable.

The structure shown above can be manufactured, for example, as shown below.

In the plate-shaped insulating layer 510, a copper foil having a thickness of 18 μm was formed on both sides of a 0.1 mm thick glass epoxy, and the copper foil was etched to form a connection wiring 520. Since silver plating having a thickness of 2 μm or more is applied to the surface of the copper foil of the circuit pattern by the electric field plating method, the circuit pattern on the surface is transmitted through the through hole and all of the circuit patterns on the back surface are turned on, and the silver plating is formed by cutting. The end of the circuit board 32 is removed, and edge cutting of the circuit pattern is performed. Next, an adhesive layer 540 having a thickness of 50 μm obtained by a hot melt adhesive was formed on the back side.

Then, the insulating layer 510 which is a portion of the plate-shaped insulating layer 510 which becomes the semiconductor light-emitting element mounting portion 530 is removed by punching or the like.

Next, a highly reflective aluminum plate having a thickness of 0.7 mm and a plate-shaped insulating layer 510 were superposed on a predetermined position and hot pressed. Thereby, the highly reflective aluminum plate is strongly bonded to the plate-shaped insulating layer 510, and the COB type circuit board 32 is formed.

Next, the first semiconductor light-emitting element 64a and the second semiconductor light-emitting element 64b are next attached to the exposed portion of the metal base of the circuit board 32. The first bonding pad electrode 210 and the second bonding pad electrode 240 of the first semiconductor light emitting element 64a are connected to the connection wiring 520 by the bonding wires 65.

Thereby, a so-called COB having a structure in which the first semiconductor light-emitting element 64a and the second semiconductor light-emitting element 64b are directly mounted on the circuit board 32 can be formed.

In the illuminating device 20 produced as described above, the photon density (optical quantum density) immediately below 20 cm is 250 μmol/m ² /sec when the average of the first semiconductor light-emitting elements 64a that emit blue light is 20 mA per one time. When the average of the second semiconductor light-emitting elements 64b that emit red light is 20 mA per one turn, it is 150 μmol/m ² /sec.

In addition, when the semiconductor light-emitting device is not lit, (I) is placed at 5 ° C for 15 minutes, (II) is heated to 60 ° C for 15 minutes, (III) is placed at 60 ° C for 15 minutes, and (IV) is cooled for 15 minutes. At 5 ° C, the temperature cycle returned to (I) was repeated for a cycle of 1000 cycles, and the inner surface of the transparent cover member 12 (glass) of the illuminating device 20 was blurred, and no condensation was observed. In addition, in the environment of 30° C. and 95% RH (relative humidity), the first semiconductor light-emitting device 64a that emits blue light flows 10 mA, and the second semiconductor light-emitting device 64b that emits red light flows through 30 mA for 1000 hours. In the lighting test, rust or semiconductor light-emitting elements were not lit inside the illuminating device 20, and the optical quantum density was maintained at 98% of the initial value.

In the present embodiment, in order to extract light efficiently, a reflecting surface may be provided on the side surface of the insulating layer 510 surrounding the semiconductor light emitting element mounting portion 530. The reflecting surface may be formed of a metal film having a high reflectance such as Al, or may be a metal ring formed of Al or the like which is fitted in the shape of the semiconductor light emitting element mounting portion 530.

Further, in the present embodiment, as in the first embodiment, reflection in the direction of the light emitted from the first semiconductor light-emitting element 64a and the second semiconductor light-emitting element 64b on the circuit board 32 may be provided. Device 26. Among these, the reflector 26 may correspond to the semiconductor light emitting element installation portion 530, and may have a parabolic reflection surface, for example. The reflectors 26 may be provided for each of the first semiconductor light-emitting elements 64a and the second semiconductor light-emitting elements 64a constituting the pair, and the reflectors 26 may be provided for each pair. Further, when the direction of the light is controlled only in the short side or the long side direction of the circuit board 32, the slit 26 may be formed in a slit shape.

Further, in the present embodiment, the low-impedance wafer impedance 66 is used in a portion where the other two connection wirings 520 are connected across the connection wiring 520. However, the connection wiring 520 may be formed in multiple layers.

The illumination devices 10 and 20 according to the present embodiment are configured to heat the first semiconductor light-emitting device 64a and the second semiconductor light-emitting device 64b by the heat radiation substrate 24 and the refrigerant contained in the refrigerant conduit 25 of the heat radiation substrate 24. It is discharged to the outside of the cultivation room 60. Therefore, the first semiconductor light-emitting element 64a and the second semiconductor light-emitting element 64b can be supplied with a large current without a decrease in luminous efficiency, and the operation can be performed with high light without causing deterioration.

The inside of the illuminating devices 10 and 20 is sealed to suppress the inflow of the outside air. Therefore, it is possible to suppress the corrosion of the first semiconductor light-emitting element 64a and the second semiconductor light-emitting element 64b due to moisture due to the intrusion of moisture. Further, when the inside of the illumination devices 10 and 20 is filled with dry air or dry nitrogen, corrosion of the first semiconductor light-emitting device 64a and the second semiconductor light-emitting device 64b due to moisture can be further suppressed. Therefore, even a GaAlAs-based semiconductor light-emitting device that is easily corroded by moisture can be used as the illumination devices 10 and 20 for plant cultivation.

Further, since the illuminating devices 10 and 20 are provided with the refrigerant duct 25 in the interior of which the dry air or the dry nitrogen is filled and the outside airflow is suppressed, the refrigerant is not condensed even if the refrigerant is circulated to the cultivation chamber 60 having a high temperature and high humidity. In this case, corrosion due to dew condensation water of the heat release substrate 24 and the refrigerant conduit 25 can be suppressed.

Next, in the present embodiment, the male first pipe coupler 16 and the female second pipe coupler 17 can be connected by a simple operation, so that the connection or removal of the plurality of illumination devices 10 and 20 can be relatively simple. It is easy, and it is easy to construct or change the plant cultivation system 1. Then, the plurality of illuminating devices 10 and 20 are connected by the piping member (the male first pipe coupler 16 and the female second pipe coupler 17) as the refrigerant passage. Therefore, it is not necessary to separately provide a connection for the connection. member. Further, the plurality of illuminating devices 10 and 20 can be arranged in close proximity, and the space of the cultivation room 60 can be effectively utilized.

1. . . Plant cultivation system

10, 20. . . Lighting device

11. . . Exterior cover

12. . . Transparent cover

13. . . First side cover

14. . . Second side cover

15. . . Piping connector

16. . . First piping coupler

16a. . . First piping coupler body

16b. . . Movable ring

16c. . . Claw

16d. . . Spring coil

17. . . 2nd pipe coupler

17a. . . Second piping coupler body

17b. . . O-ring

17c. . . Trench

twenty one. . . Light emitting device package

22, 32. . . Circuit substrate

twenty three. . . Insulating heat release material

twenty four. . . Exothermic substrate

25. . . Refrigerant conduit

26. . . reflector

27. . . Reflective surface

30. . . Lighting control department

31. . . Lighting control wiring

32. . . Circuit substrate

40. . . Refrigerant supply department

41. . . Refrigerant piping

50. . . Cultivation container

60. . . Cultivation room

61. . . Resin container

62a, 62b. . . Anode lead

63a, 63b. . . Lead portion for cathode

64a. . . First semiconductor light emitting element

64b. . . Second semiconductor light emitting element

65. . . Bonding wire

66. . . Wafer impedance

70. . . Bottom

71. . . Open face

80. . . Wall

100. . . First layer semiconductor layer

110. . . First substrate

120. . . middle layer

130. . . Base layer

140. . . 1st type semiconductor layer

140c. . . Semiconductor layer exposed surface

150. . . First luminescent layer

160. . . 1st p-type semiconductor layer

170. . . Transparent electrode

170c. . . Above

180. . . First protective layer

210. . . First bonding pad electrode

240. . . Second bonding pad electrode

300. . . Second layer semiconductor layer

310. . . Second substrate

310a. . . Vertical plane

310b. . . Inclined surface

310c. . . Bottom

320. . . Deformation adjustment layer

320c. . . Above

330. . . 2p-type semiconductor layer

340. . . Second luminescent layer

350. . . 2n-type semiconductor layer

350c. . . Above

360. . . 2nd protective layer

400. . . Third bonding pad electrode

401. . . Wiring

410. . . 4th bonding pad electrode

510. . . Insulation

520. . . Connection wiring

520a, 520b, 520c, 520d. . . Connection wiring terminal

530. . . Semiconductor light-emitting element setting unit

540. . . Next layer

550. . . Sealing resin

Fig. 1 is a view showing an example of a plant cultivation system to which the present embodiment is applied.

Fig. 2 is a view showing an example of the outer shape of the lighting device to which the first embodiment is applied.

Fig. 3 is a view showing an example of a first pipe coupler and a second pipe coupler.

Fig. 4 is a view showing an example of the inside of the lighting device.

Fig. 5 is a view showing an example of the configuration of a light-emitting element package used in the first embodiment.

Fig. 6 is a cross-sectional view showing an example of a configuration of a blue light-emitting semiconductor light-emitting device used in the present embodiment.

Fig. 7 is a top view of a blue light emitting semiconductor light emitting element.

Fig. 8 is a cross-sectional view showing an example of a configuration of a red light-emitting semiconductor light-emitting device used in the present embodiment.

Figure 9 is a top view of a red light emitting semiconductor light emitting element.

Fig. 10 is a cross-sectional view showing an example of a lighting device to which the second embodiment is applied.

Fig. 11 is a plan view showing an example of a connection relationship between a connection wiring provided on a COB (Chip On Board) circuit board and a semiconductor light emitting element.

Fig. 12 is a view further showing a COB (Chip On Board) type circuit board on which a semiconductor light emitting element is directly mounted.

10. . . Lighting device

11. . . Exterior cover

12. . . Transparent cover

13. . . First side cover

14. . . Second side cover

15. . . Piping connector

16. . . First piping coupler

17. . . 2nd pipe coupler

twenty one. . . Light emitting device package

twenty two. . . Circuit substrate

twenty three. . . Insulating heat release material

twenty four. . . Exothermic substrate

25. . . Refrigerant conduit

26. . . reflector

27. . . Reflective surface

31. . . Lighting control wiring

Claims (11)

An illumination device for plant cultivation, comprising: a plurality of light-emitting elements; a light-transmissive window portion that transmits light emitted from the light-emitting elements; and a frame that covers the light-emitting element; a heat radiation substrate that radiates heat generated by the light-emitting element by conduction, and a refrigerant conduit that is attached to the heat radiation substrate as a refrigerant flow path, wherein the frame system is configured to be in the frame The inside of the frame includes the refrigerant conduit, and the inside of the frame suppresses the inflow of the outside air, and the exothermic substrate has a portion inserted into the refrigerant conduit, and the exothermic substrate is formed by extrusion molding of aluminum or aluminum alloy. The aforementioned refrigerant conduit that is inserted is integrally formed. The lighting device for plant cultivation according to the first aspect of the invention, wherein the frame system fills the inside of the casing with dry air or dry nitrogen. The illuminating device for plant cultivation according to the first or second aspect of the invention, wherein the illuminating device for plant cultivation further includes: connecting the refrigerant conduit to an adjacent refrigerant conduit provided in the adjacent illuminating device; A connecting means for forming a refrigerant flow path between the adjacent refrigerant conduit and the refrigerant conduit. The illuminating device for plant cultivation according to the first or second aspect of the invention, wherein the frame body has an elongated box shape, and one surface of the elongated direction constitutes the light transmissive window portion, and the other of the elongated direction 3 facets are connected In the exterior part, the remaining two sides form a side part. The illuminating device for plant cultivation according to the fourth aspect of the invention, wherein the exterior portion is produced by extrusion molding of aluminum or an aluminum alloy. The illumination device for plant cultivation according to the first or second aspect of the invention, wherein the light-emitting element is provided in a light-emitting element package, the light-emitting element package is fixed to a circuit board, and the circuit board is fixed In the aforementioned heat release substrate. The illumination device for plant cultivation according to the first or second aspect of the invention, wherein the light-emitting element is directly connected to a metal base portion of a circuit board of a metal base, and the circuit board is fixed to the heat radiation substrate. The illumination device for plant cultivation according to the first or second aspect of the invention, wherein the light-emitting element comprises a light-emitting element having an emission peak wavelength of 400 to 500 nm and a light-emitting element having an emission peak wavelength of 655 to 675 nm. The illumination device for plant cultivation according to the eighth aspect of the invention, wherein the light-emitting element having an emission peak wavelength of 655 to 675 nm includes at least a pn junction type light-emitting portion and a deformation adjustment layer laminated on the light-emitting portion. In the compound semiconductor layer, the light-emitting portion has a deformed light-emitting layer and a barrier layer composed of a composition formula (Al _X Ga _1-X ) _Y In _1-Y P (0≦X≦0.1, 0.37≦Y≦0.46) In the laminated structure, the deformation adjustment layer is transparent with respect to an emission wavelength, and has a lattice constant smaller than a lattice constant of the deformed light-emitting layer and the barrier layer. For plant cultivation, as in the first or second aspect of the patent application In the illumination device, a reflector for setting a direction of light of the light-emitting element is further provided between the light-emitting element and the light-transmitting window portion. A plant cultivation system comprising: a plurality of illumination devices for plant cultivation, comprising: a plurality of light-emitting elements; and a light-transmissive window portion that transmits light emitted from the light-emitting elements to cover the light-emitting elements a housing; a heat radiation substrate disposed inside the housing and radiating heat generated by the light emitting element by conduction; and a refrigerant conduit mounted on the heat radiation substrate as a refrigerant flow path, The heat radiation substrate has a portion into which the refrigerant conduit is inserted, and the heat radiation substrate is formed by extrusion molding of aluminum or aluminum alloy, and is integrally formed with the inserted refrigerant conduit, and the adjacent refrigerant conduits are connected to each other to form a refrigerant. a refrigerant supply unit that supplies a refrigerant to the refrigerant conduit to which the illumination device for plant cultivation is connected, and an illumination control unit that controls lighting and extinction of the light-emitting element of the illumination device for the plurality of plant cultivation .