TWI422961B - Photomask and method of manufacturing the same, method of transferring a pattern, and method of manufacturing a display device - Google Patents
Photomask and method of manufacturing the same, method of transferring a pattern, and method of manufacturing a display device Download PDFInfo
- Publication number
- TWI422961B TWI422961B TW097126216A TW97126216A TWI422961B TW I422961 B TWI422961 B TW I422961B TW 097126216 A TW097126216 A TW 097126216A TW 97126216 A TW97126216 A TW 97126216A TW I422961 B TWI422961 B TW I422961B
- Authority
- TW
- Taiwan
- Prior art keywords
- pattern
- semi
- light
- photomask
- film
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 34
- 238000004519 manufacturing process Methods 0.000 title claims description 33
- 229920002120 photoresistant polymer Polymers 0.000 claims description 60
- 238000012546 transfer Methods 0.000 claims description 59
- 239000000758 substrate Substances 0.000 claims description 48
- 239000004973 liquid crystal related substance Substances 0.000 claims description 19
- 238000002834 transmittance Methods 0.000 claims description 14
- 230000005540 biological transmission Effects 0.000 claims description 9
- 238000000059 patterning Methods 0.000 claims description 8
- 239000010408 film Substances 0.000 description 150
- 239000011651 chromium Substances 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 125000006850 spacer group Chemical group 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 238000011161 development Methods 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 229910000423 chromium oxide Inorganic materials 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910016006 MoSi Inorganic materials 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000005078 molybdenum compound Substances 0.000 description 2
- 150000002752 molybdenum compounds Chemical class 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 206010034960 Photophobia Diseases 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- SJKRCWUQJZIWQB-UHFFFAOYSA-N azane;chromium Chemical compound N.[Cr] SJKRCWUQJZIWQB-UHFFFAOYSA-N 0.000 description 1
- 150000001845 chromium compounds Chemical class 0.000 description 1
- 229910021563 chromium fluoride Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 208000013469 light sensitivity Diseases 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000000475 sunscreen effect Effects 0.000 description 1
- 239000000516 sunscreening agent Substances 0.000 description 1
- FTBATIJJKIIOTP-UHFFFAOYSA-K trifluorochromium Chemical compound F[Cr](F)F FTBATIJJKIIOTP-UHFFFAOYSA-K 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Description
本發明係有關於一種用於液晶顯示裝置(Liquid Crystal Display：以下，稱為LCD)製造等之光罩，特別是有關於適合用於薄膜電晶體液晶顯示裝置製造所用之薄膜電晶體基板之製造之大型光罩(例如一邊為300mm以上)及其製造方法，以及使用該光罩之圖案轉印方法。The present invention relates to a photomask for liquid crystal display (hereinafter referred to as LCD) manufacturing, and the like, and more particularly to the manufacture of a thin film transistor substrate suitable for use in the manufacture of a thin film transistor liquid crystal display device. A large-sized photomask (for example, 300 mm or more on one side), a method of manufacturing the same, and a pattern transfer method using the photomask.
目前，在LCD之領域中，具有薄膜電晶體(Thin Film Transistor：以下，稱為TFT)之液晶顯示裝置(Thin Film Transistor Liquid Crystal Display：以下，稱為TFT-LCD)相較於CRT(陰極射線管)，具有易呈薄型，耗費電力低之優點，故商品化急速進展。TFT-LCD具有於排列成矩陣狀之各像素排列TFT之構造之TFT基板與對應於各像素，排列紅、綠及藍之像素圖案之彩色濾光片在隔著液晶相之下重疊之概略構造。TFT-LCD製程數多，僅TFT基板，即使用5~6片之光罩來製造。此種狀況下，提出使用4片光罩，進行TFT基板之製造之方法。At present, in the field of LCDs, Thin Film Transistor (hereinafter referred to as TFT) liquid crystal display device (Thin Film Transistor Liquid Crystal Display: hereinafter referred to as TFT-LCD) is compared with CRT (Cathode Ray) Tube), which has the advantage of being easy to be thin and low in power consumption, so the commercialization has progressed rapidly. The TFT-LCD has a schematic structure in which a TFT substrate having a structure in which TFTs are arranged in a matrix in a matrix and a color filter in which pixel patterns of red, green, and blue are arranged corresponding to each pixel are overlapped under a liquid crystal phase. . The number of TFT-LCD processes is large, and only TFT substrates are used, that is, 5 to 6 photomasks are used. In such a case, a method of manufacturing a TFT substrate using four photomasks has been proposed.
此方法係藉由使用具有遮光部、透光部、半透光部(灰階部)之光罩(以下稱為灰階光罩)，減低使用之光罩片數者。在此，半透光部係指使用光罩，將圖案轉印至被轉印體時，將透射之曝光光之透射量減低預定量，控制被轉印體上之光阻膜之顯影後之殘留膜量之部份。將具有此種 半透光部及遮光部、透光部之光罩稱為灰階光罩。In this method, a photomask having a light-shielding portion, a light-transmitting portion, and a semi-transmissive portion (gray-scale portion) (hereinafter referred to as a gray scale mask) is used to reduce the number of masks used. Here, the semi-transmissive portion refers to the use of a photomask to reduce the transmission amount of the transmitted exposure light by a predetermined amount when the pattern is transferred to the transfer target, and to control the development of the photoresist film on the transfer target. Part of the residual film volume. Will have this The light shield of the semi-transmissive portion, the light-shielding portion, and the light-transmitting portion is called a gray scale mask.
於第3圖及第4圖顯示使用灰階光罩之TFT基板之製程之一例。第4圖係顯示接續第3圖製程之製程。An example of a process for using a TFT substrate using a gray scale mask is shown in FIGS. 3 and 4. Figure 4 shows the process of the process of the third drawing.
於玻璃基板1上形成閘極電極用金屬膜，以使用光罩之微影製程形成閘極電極2。之後，形成閘極絕緣膜3、第1半導體膜4(a-Si：非晶矽)、第2半導體膜5(N+a-Si)、源極/汲極用金屬膜6及正型光阻膜7(第3 (a)圖)。接著，使用具有遮光部11、透光部12、半透光部13之灰階光罩10，將正型光阻膜7曝光，而顯影。藉此，形成第1光阻圖案7a，以覆蓋TFT通道部形成區域及源極/汲極形成區域、資料線形成區域，且通道部形成區域較源極/汲極形成區域薄(第3 (b)圖)。接著，將第1光阻圖案7a作為光罩，將源極/汲極金屬膜6及第2、第1半導體膜5、4蝕刻(第3 (c)圖)。然後，以氧之灰化去除通道部形成區域之薄光阻膜，而形成第2光阻圖案7b(第4 (a)圖)。之後，以第2光阻圖案7b作為光罩，蝕刻源極/汲極用金屬膜6，形成源極/汲極6a、6b，接著，蝕刻第2半導體膜5(第4 (b)圖)，最後，剝離殘留之第2光阻圖案7b。A metal film for a gate electrode is formed on the glass substrate 1, and the gate electrode 2 is formed by a photolithography process using a photomask. Thereafter, the gate insulating film 3, the first semiconductor film 4 (a-Si: amorphous germanium), the second semiconductor film 5 (N+a-Si), the source/drain metal film 6, and the positive light are formed. Resist film 7 (Fig. 3 (a)). Next, using the gray scale mask 10 having the light shielding portion 11, the light transmitting portion 12, and the semi-light transmitting portion 13, the positive resist film 7 is exposed and developed. Thereby, the first photoresist pattern 7a is formed to cover the TFT channel portion formation region, the source/drain formation region, and the data line formation region, and the channel portion formation region is thinner than the source/drain formation region (third ( b) Figure). Next, the first photoresist pattern 7a is used as a mask, and the source/drain metal film 6 and the second and first semiconductor films 5 and 4 are etched (Fig. 3(c)). Then, the thin photoresist film of the channel portion forming region is removed by ash ashing to form the second photoresist pattern 7b (Fig. 4(a)). Thereafter, the source/drain metal film 6 is etched by using the second photoresist pattern 7b as a mask to form source/drain electrodes 6a and 6b, and then the second semiconductor film 5 is etched (Fig. 4(b)) Finally, the remaining second photoresist pattern 7b is peeled off.
在此使用之光罩10已知有半透光部以細微圖案形成之構造者。例如如第5圖所示，灰階光罩具有對應於源極/汲極之遮光部11a、11b、透光部12、對應於TFT通道部之半透光部(灰階部)13。半透光部13為形成有由使用灰階光罩10之LCD用曝光機之解析度界限以下之細微圖案構 成之遮光圖案13a之區域。遮光部11a、11b及遮光圖案13a通常皆由由鉻或鉻化合物等相同材料構成之相同厚度之膜形成。使用灰階光罩之LCD用曝光機之解析度界限大多是為步進式曝光機時，約3μm，為鏡像投影式曝光機時，約4μm。因此，例如，在第5圖，可使半透光部13之透射部13b之間隔寬度為不到3μm，遮光圖案13a之線寬為曝光機之解析度界限以下之不到3μm。The reticle 10 used herein is known to have a structure in which a semi-transmissive portion is formed in a fine pattern. For example, as shown in Fig. 5, the gray scale mask has light blocking portions 11a and 11b corresponding to the source/drain electrodes, a light transmitting portion 12, and a semi-light transmitting portion (gray portion) 13 corresponding to the TFT channel portion. The semi-transmissive portion 13 is formed with a fine pattern below the resolution limit of the exposure machine for LCD using the gray scale mask 10 The area of the shading pattern 13a. The light shielding portions 11a and 11b and the light shielding pattern 13a are usually formed of a film of the same thickness composed of the same material such as chromium or a chromium compound. The resolution limit of an LCD exposure machine using a gray scale mask is mostly about 3 μm for a stepper exposure machine and about 4 μm for a mirror projection exposure machine. Therefore, for example, in Fig. 5, the width of the transmissive portion 13b of the semi-transmissive portion 13 can be made less than 3 μm, and the line width of the light-shielding pattern 13a can be less than 3 μm below the resolution limit of the exposure machine.
上述細微圖案式半透光部灰階部份之設計，具體而言為保持遮光部及透光部中間之半色調效果，而有呈線與間隔(line and space)式、點(網點)式或其他圖案之選擇。例如，藉由線與間隔式，設計細微圖案時，藉由適當選擇其線寬、光透光部份與遮光部份之面積比例等，可控制全體之透射率。The design of the gray-scale portion of the fine-pattern semi-transmissive portion is specifically a half-tone effect between the light-shielding portion and the light-transmitting portion, and has a line and space type and a dot (mesh point) type. Or other choice of patterns. For example, when a fine pattern is designed by line and space, the transmittance of the whole can be controlled by appropriately selecting the line width, the ratio of the area of the light-transmitting portion to the light-shielding portion, and the like.
另一方面，已知有使用半透射性(例如，曝光光之透射率40~60%)之半透光膜，實現上述半透光部之方法(例如，專利文獻1：特開2002-189280號公報)。藉由使用此半透光膜，可減少半透光部之曝光量，執行半色調(halftone)曝光。當使用半透光膜時，在設計上，僅檢討全體透射率需多少即足夠，有僅選擇半透光膜之膜種類(膜材質)及膜厚，即可生成灰階光罩之優點。因而，在灰階光罩之製造方面，僅進行半透光膜之膜厚控制便已足夠，比較易進行管理。又，當以灰階光罩之半透光部形成TFT通道部時，因為只要為半透光膜，便能容易以微影製程進口圖案化， 故有即使TFT通道部之形狀為複雜之圖案形狀，亦可進行之優點。On the other hand, a method of realizing the semi-transmissive portion using a semi-transmissive film having a semi-transmissive property (for example, a transmittance of 40 to 60% of exposure light) is known (for example, Patent Document 1: JP-A-2002-189280) Bulletin). By using this semi-transmissive film, the amount of exposure of the semi-transmissive portion can be reduced, and halftone exposure can be performed. When a semi-transmissive film is used, it is sufficient to review only the total transmittance, and it is advantageous to select only the film type (film material) and film thickness of the semi-transmissive film to form a gray scale mask. Therefore, in the manufacture of the gray scale mask, only the film thickness control of the semi-transmissive film is sufficient, and it is easy to manage. Moreover, when the TFT channel portion is formed by the semi-transmissive portion of the gray scale mask, since it is only a semi-transmissive film, it is easy to pattern the lithography process inlet. Therefore, even if the shape of the TFT channel portion is a complicated pattern shape, the advantages can be made.
顯示裝置，特別是液晶顯示裝置用光罩係以在對應於該液晶顯示裝置之圖案尺寸之解析度之曝光機中使用為前提，達成與其相稱之尺寸精確度，進行缺陷檢查等。在此，使用前述之細微圖案，實現半透光部之方法中，利用曝光機之解析度界限，設計半透光部之細微圖案，依此部份之曝光光之透射量，將被轉印體上之光阻膜之殘留膜量僅減低所需量，結果，減低使用之光罩片數。The display device, in particular, the photomask for a liquid crystal display device is used in an exposure machine corresponding to the resolution of the pattern size of the liquid crystal display device, and achieves dimensional accuracy commensurate with it, and performs defect inspection and the like. Here, in the method of realizing the semi-transmissive portion using the above-described fine pattern, the fine pattern of the semi-transmissive portion is designed by using the resolution limit of the exposure machine, and the transmission amount of the exposure light according to this portion is transferred. The amount of residual film of the photoresist film on the body is only reduced by the required amount, and as a result, the number of reticle sheets used is reduced.
即，在一般使用之曝光機之曝光條件中，以解析度界限為3μm左右為前提，依需要，為使未解析之轉印影像成為更均一之灰階影像，亦可調節曝光條件，但即使如此，仍利用此種曝光機之解析度界限。習知在此領域中，即使作為使用光罩，轉印預定圖案而製造之顯示裝置，仍有以此種程度之解析度係足夠之背景。That is, in the exposure conditions of the exposure machine generally used, the resolution limit is about 3 μm, and if necessary, the exposure conditions can be adjusted to make the unresolved transferred image a more uniform gray-scale image, but even As such, the resolution limits of such exposure machines are still utilized. Conventionally, in this field, even a display device manufactured by transferring a predetermined pattern using a photomask has a sufficient background to such a degree of resolution.
然而，最近幾年，逐漸要求轉印更精細之圖案。例如，漸漸檢討藉由將通道部之尺寸縮小成小於習知以上，提高薄膜電晶體之動作速度等之可能性。However, in recent years, it has been increasingly required to transfer finer patterns. For example, it is gradually reviewed that the size of the channel portion is reduced to be smaller than the conventional one, and the possibility of the operating speed of the thin film transistor or the like is increased.
然而，為提高依曝光條件所產生之解析度，若變更曝光機之光源(即，令光源之波長區為短波長側者)，則產生需為設備上之大變更，同時，亦變更光阻之分光感度等之條件。實際上，為獲得用以實現大面積之曝光大光量， 通常在需使用365nm~436nm左右之波長區之光源之液晶顯示裝置製造用曝光機中，藉由使用較上述短之波長區之光源而提高解析度之方法無法適用，僅依賴曝光光源，則難以同時達成曝光機之解析度與大光量。又，僅以曝光機之光學系統之設計來提高解析度(例如應用高NA(數值孔隙)之光學系統)，則有構造上、成本上之問題。However, in order to improve the resolution caused by the exposure conditions, if the light source of the exposure machine is changed (that is, the wavelength region of the light source is on the short wavelength side), a large change in the device is required, and the photoresist is also changed. The conditions of the light sensitivity and the like. In fact, in order to obtain a large amount of light for achieving a large area of exposure, Generally, in an exposure machine for manufacturing a liquid crystal display device using a light source having a wavelength region of about 365 nm to 436 nm, a method of improving the resolution by using a light source of a shorter wavelength region is not applicable, and it is difficult to rely solely on an exposure light source. At the same time, the resolution of the exposure machine and the amount of large light are achieved. Moreover, the improvement in resolution (for example, an optical system using a high NA (numerical aperture)) by the design of the optical system of the exposure machine has problems in construction and cost.
本發明即是鑑於上述習知問題而發明者，本發明第1目的係提供解析在習知用於液晶顯示裝置製造之曝光機之曝光條件中無法解析之數μm以下，例如3μm以下之圖案，用以獲得更精細之轉印影像之光罩The present invention has been made in view of the above-described conventional problems, and a first object of the present invention is to provide a pattern of several μm or less, for example, 3 μm or less which cannot be analyzed in an exposure condition of an exposure machine conventionally used for manufacturing a liquid crystal display device. Used to obtain a finer transfer image mask
又，本發明第2目的係提供此種光罩之較佳之製造方法。Further, a second object of the present invention is to provide a preferred method of manufacturing such a photomask.
再者，本發明第3目的係提供使用上述光罩之精細圖案轉印方法。Furthermore, a third object of the present invention is to provide a fine pattern transfer method using the above-described photomask.
為解決上述課題，本發明具有以下結構。In order to solve the above problems, the present invention has the following structure.
一種光罩，係藉由將形成於透明基板上之半透光膜圖案化而形成預定圖案，且具有透光部及半透光部，該光罩藉由透射該光罩之曝光光，於被轉印體上形成線寬不到3μm之轉印圖案，該光罩之特徵為包含有前述透光部或前述半透光部之至少一者是具有不到3μm之線寬部份，且由前述透光部及前述半透光部構成之圖案。A photomask formed by forming a predetermined pattern by patterning a semi-transparent film formed on a transparent substrate, and having a light transmitting portion and a semi-light transmitting portion, the mask being exposed to the exposure light of the mask a transfer pattern having a line width of less than 3 μm is formed on the transfer body, and the mask is characterized in that at least one of the light transmitting portion or the semi-transmissive portion has a line width portion of less than 3 μm, and a pattern composed of the light transmitting portion and the semi-transmissive portion.
如結構1之光罩，其中前述圖案具有前述透光部之線寬不到3μm之部份。For example, in the photomask of the structure 1, the pattern has a portion in which the line width of the light transmitting portion is less than 3 μm.
如結構1或結構2之光罩，其中當令前述透明基板之曝光光透射率為100%時，前述半透光膜之曝光光透射率為20%~60%之範圍。In the mask of the structure 1 or the structure 2, when the exposure light transmittance of the transparent substrate is 100%, the exposure light transmittance of the semi-transmissive film is in the range of 20% to 60%.
如結構1至結構3中任一項之光罩，其中前述曝光光之波長區包含365nm~436nm之範圍內之波長區。The reticle of any one of the structures 1 to 3, wherein the wavelength region of the exposure light comprises a wavelength region in the range of 365 nm to 436 nm.
如結構1至結構4中任一項之光罩，其中前述半透光部相對於前述透光部之前述曝光光之相位差為60度以下。The reticle according to any one of the first to fourth aspects, wherein the phase difference of the exposure light of the semi-transmissive portion with respect to the light-transmitting portion is 60 degrees or less.
如結構1至結構4中任一項之光罩，其中前述光罩係液晶顯示裝置製造用光罩。The photomask of any one of the structures 1 to 4, wherein the photomask is a photomask for manufacturing a liquid crystal display device.
一種光罩之製造方法，光罩係藉由將形成於透明基板上之半透光膜圖案化而形成預定圖案，且具有透光部及半透光部，藉由透射該光罩之曝光光，於被轉印體上形成線寬不到3μm之轉印圖案，該光罩之製造方法之特徵為於前述透光部或前述半透光部之至少一方形成包含不到3μm之線寬部份，且由前述透光部及前述半透光部構成之圖案。A photomask manufacturing method, wherein a photomask is formed by patterning a semi-transmissive film formed on a transparent substrate to form a predetermined pattern, and has a light transmitting portion and a semi-transmissive portion, and the exposure light transmitted through the photomask a transfer pattern having a line width of less than 3 μm is formed on the transfer target, and the method of manufacturing the mask is characterized in that at least one of the light transmitting portion or the semi-transmissive portion is formed to have a line width portion of less than 3 μm. And a pattern composed of the light transmitting portion and the semi-transmissive portion.
如結構7之光罩之製造方法，其中預先求出在預定之曝光條件下，光罩上具有不到3μm之線寬部份之透光部或半透光部之線寬，與形成在與其相對應的被轉印體上之光阻圖案線寬的相關關係，依該相關關係，決定形成於前述光罩之透光部或半透光部之線寬，依該決定之線寬尺寸，在光罩上形成由前述透光部及前述半透光部構成之圖案。The manufacturing method of the reticle of the structure 7, wherein the line width of the light transmitting portion or the semi-light transmitting portion having a line width portion of less than 3 μm on the reticle under predetermined exposure conditions is determined in advance Corresponding relationship between the line widths of the resist patterns on the corresponding transfer body, and determining the line width formed in the light transmitting portion or the semi-transmissive portion of the mask according to the correlation, according to the determined line width dimension, A pattern composed of the light transmitting portion and the semi-light transmitting portion is formed on the photomask.
一種圖案轉印方法，係使用結構1至結構5任一項之光罩，或依結構7或結構8之製造方法作成之光罩，以365nm~436nm之波長範圍之曝光光，對被轉印體曝光而轉印線寬不到3μm之圖案。A pattern transfer method is to use a photomask of any one of the structures 1 to 5, or a photomask made by the manufacturing method of the structure 7 or the structure 8, and the exposure light of the wavelength range of 365 nm to 436 nm is transferred. The body is exposed while the transfer line width is less than 3 μm.
根據本發明之光罩，在液晶製造裝置製造之過程，使用該光罩，將預定圖案轉印至被轉印體，形成對應該圖案之光阻圖案時，可形成3μm不到之線寬之細微圖案。因此，只要根據使用本發明光罩之圖案轉印方法，於被轉印體上形成此種精細圖案時，便不需變更習知用於液晶顯示裝置製造之一般曝光機之光學系統及光源波長區，而可在本發明中直接使用，而提高實際上之解析度。因而，根據本發明，可簡易地進行具有較習知更精細之圖案之液晶顯示裝置之製造。According to the reticle of the present invention, in the process of manufacturing the liquid crystal manufacturing apparatus, when the reticle is used to transfer a predetermined pattern to the object to be transferred to form a photoresist pattern corresponding to the pattern, a line width of less than 3 μm can be formed. Fine pattern. Therefore, as long as such a fine pattern is formed on the transfer target according to the pattern transfer method using the photomask of the present invention, it is not necessary to change the optical system and the wavelength of the light source of a conventional exposure machine for manufacturing a liquid crystal display device. The zone can be used directly in the present invention to increase the actual resolution. Thus, according to the present invention, the manufacture of a liquid crystal display device having a more conventional pattern can be easily performed.
以下，說明用以實施本發明之最佳形態。Hereinafter, the best mode for carrying out the invention will be described.
本發明如前述結構1所記載，係有關於一種藉由將形 成於透明基板上之半透光膜圖案化，形成預定圖案，且具有透光部及半透光部的光罩，該光罩藉由透射該光罩之曝光光，於被轉印體上形成線寬不到3μm之轉印圖案，該光罩含有前述透光部或前述半透光部之至少一者是具有不到3μm之線寬部份，且由前述透光部及前述半透光部構成之圖案。The present invention is related to the structure 1 described above. The semi-transmissive film formed on the transparent substrate is patterned to form a predetermined pattern, and has a light-transmitting portion and a semi-transmissive portion, and the photomask is exposed on the object to be transferred by the exposure light transmitted through the photomask. Forming a transfer pattern having a line width of less than 3 μm, wherein the mask includes at least one of the light transmitting portion or the semi-transmissive portion having a line width portion of less than 3 μm, and the light transmissive portion and the aforementioned transflective portion The pattern formed by the light part.
即，本發明係以將實際上不到3μm之細微圖案轉印至被轉印體上為目的，提供用於其之光罩之構造者。That is, the present invention provides a structure for a photomask for the purpose of transferring a fine pattern of practically less than 3 μm onto a transfer target.
在本發明之光罩中，前述透光部或前述半透光部之至少一者具有不到3μm之線寬部份，即使透光部或半透光部具有2μm以下之線寬部份，仍可於被轉印體上轉印細微圖案，本發明之效果顯著。In the reticle of the present invention, at least one of the light transmitting portion or the semi-transmissive portion has a line width portion of less than 3 μm, and even if the light transmitting portion or the semi-light transmitting portion has a line width portion of 2 μm or less, The fine pattern can still be transferred onto the transferred body, and the effect of the present invention is remarkable.
舉例言之，於光罩上形成線部(半透光膜形成部份)之線寬Aμm(例如2μm)、間隔部(透明基板露出)之線寬Aμm(例如2μm)之線與間隔圖案，轉印至被轉印體上之正型光阻時，能於被轉印體上形成具有不到Aμm之線寬(例如1.8μm)之線圖案作為光阻圖案。此時，間隔之線寬成為超過Aμm之值。For example, a line and a space pattern of a line width (a semi-transmissive film forming portion) having a line width of A μm (for example, 2 μm) and a line portion (a transparent substrate exposed) having a line width of A μm (for example, 2 μm) are formed on the mask. When the positive resist is transferred onto the transfer target, a line pattern having a line width (for example, 1.8 μm) of less than A μm can be formed as a resist pattern on the transfer target. At this time, the line width of the interval becomes a value exceeding A μm.
當線部之線寬為Bμm(B≦A)、間隔部之線寬為Aμm時，亦可於被轉印體上形成與上述相同之圖案。When the line width of the line portion is B μm (B≦A) and the line width of the spacer portion is A μm, the same pattern as described above can be formed on the transfer target.
再者，於光罩上形成線部之線寬Cμm(C>A)、間隔部之線寬Aμm之線與間隔圖案，轉印至被轉印體上之正型光阻時，可於被轉印體上形成具不到Aμm之線寬之間 隔圖案。此時，線部之線寬成為超過Cμm者。Further, when a line width Cμm (C>A) of the line portion and a line width Aμm of the spacer portion and the space pattern are formed on the mask, the positive type resist on the transfer target can be transferred to the positive resist. Formed on the transfer body with a line width of less than Aμm Separate pattern. At this time, the line width of the line portion becomes more than Cμm.
此外，在上述中，當線部或間隔部之任一者作成線寬不到3μm時，可獲得本發明顯著之效果。Further, in the above, when either of the line portion or the spacer portion is formed to have a line width of less than 3 μm, the remarkable effect of the present invention can be obtained.
此外，被轉印體當然不僅可使用正型光阻，亦可使用負型光阻。此時，在上述光罩中，藉由使用將透光部(透明基板露出之部份)置換成遮光部(使用實質上透射率為零之膜)之光罩，可於被轉印體上形成與上述相同之所需之轉印圖案。Further, of course, the transfer target may use not only a positive photoresist but also a negative photoresist. In this case, in the photomask, a photomask that replaces the light-transmitting portion (the portion where the transparent substrate is exposed) into a light-shielding portion (using a film having a substantially transmittance of zero) can be used on the transfer target. The same desired transfer pattern as described above is formed.
此外，根據本發明，如上述，藉由適當地選擇光罩之透光部或半透光部之線寬，可在被轉印體上形成具有1.5μm以下之線寬之圖案。Further, according to the present invention, as described above, by appropriately selecting the line width of the light transmitting portion or the semi-light transmitting portion of the photomask, a pattern having a line width of 1.5 μm or less can be formed on the object to be transferred.
在本發明之光罩中，不到3μm之線寬部份可在透光部，亦可在半透光部，亦可在透光部及半透光部兩者。在本發明中，於透光部或半透光部具有不到3μm之線寬部份之圖案可為，例如，在後述實施例使用之由線部(半透光部)及間隔部(透光部)構成之線與間隔圖案，在本發明中，當然不限於此，可為對應於液晶顯示裝置之圖案之任何圖案形狀。In the reticle of the present invention, the line width portion of less than 3 μm may be in the light transmitting portion, the semi-light transmitting portion, or both the light transmitting portion and the semi-light transmitting portion. In the present invention, the pattern having a line width portion of less than 3 μm in the light transmitting portion or the semi-light transmitting portion may be, for example, a line portion (semi-light transmitting portion) and a spacer portion used in the embodiment described later. In the present invention, the line and space pattern formed by the light portion are of course not limited thereto, and may be any pattern shape corresponding to the pattern of the liquid crystal display device.
本發明之光罩特別以具有夾於半透光部，形成有線寬不到3μm之透光部之圖案為佳。具有此種圖案之光罩能適合利用作為例如液晶顯示裝置之TFT基板之通道部形成用光罩。In particular, the photomask of the present invention preferably has a pattern of a light-transmitting portion having a line width of less than 3 μm sandwiched between the semi-transmissive portions. The mask having such a pattern can be suitably used as a mask for forming a channel portion of a TFT substrate such as a liquid crystal display device.
本發明之光罩之上述半透光膜可適用令透明基板(透 光部)之曝光光透射率為100%時，半透光膜對於曝光光之透射率為例如20%~60%之範圍者。更佳為40~60%之範圍內者。半透光膜之素材為可獲得上述曝光光透射率者，可任意使用眾所周知者。例如，可使用Cr化合物(鉻氧化物、鉻氮化物、鉻氧氮化物、鉻氟化物等)、矽化鉬化合物、Si、W、Al等。特別是以矽化鉬化合物為佳。這是由於可縮小用以獲得上述透射率之膜厚，可縮小圖案之高寬比，比較容易維持圖案精確度之故。又，將上述半透光膜與Cr或Cr化合物所構成之遮光膜一同使用時，由於Cr或Cr化合物有蝕刻選擇性，故可提高加工精確度。The semi-transparent film of the photomask of the present invention can be applied to a transparent substrate (through When the light transmittance of the light portion is 100%, the transmittance of the semi-transmissive film to the exposure light is, for example, in the range of 20% to 60%. More preferably in the range of 40 to 60%. The material of the semi-transmissive film is a person who can obtain the above-mentioned exposure light transmittance, and can be arbitrarily used. For example, a Cr compound (chromium oxide, chromium nitride, chromium oxynitride, chromium fluoride, or the like), a molybdenum compound, Si, W, Al, or the like can be used. In particular, a molybdenum compound is preferred. This is because the film thickness for obtaining the above transmittance can be reduced, the aspect ratio of the pattern can be reduced, and the pattern accuracy can be easily maintained. Further, when the semi-transmissive film is used together with a light-shielding film composed of a Cr or a Cr compound, since Cr or a Cr compound has etching selectivity, processing accuracy can be improved.
作為上述半透光膜之膜厚，為獲得上述透射率，例如，為鉻氧化物(CrO)時，為100~600Å (angstrom)，為MoSi化合物時，可為30 Å~120 Å。此外，上述半透光膜較佳為透射前述半透光部之曝光光之相對於透射前述透光部之相位差成為60度以下者。更佳為5~40度。The film thickness of the semi-transmissive film is, for example, 100 to 600 Å (angstrom) when the chromium oxide (CrO) is obtained, and 30 Å to 120 Å when the MoSi compound is obtained. Further, it is preferable that the semi-transmissive film has a phase difference of the exposure light transmitted through the semi-transmissive portion with respect to the transmission through the light-transmitting portion of 60 degrees or less. More preferably 5 to 40 degrees.
藉由使用本發明之光罩，如後述實施例所示，可形成實際上不到3μm尺寸之細微圖案作為轉印影像圖案。By using the photomask of the present invention, as shown in the later-described embodiment, a fine pattern having a size actually smaller than 3 μm can be formed as a transfer image pattern.
在使用本發明之光罩之曝光步驟中，可使用眾所周知之大型光罩用曝光機(對準器，aligner)。光源波長可使用i線～g線之波長區。又，亦可根據本發明之細微圖案之線寬，選擇光源波長之波長區，或調整光學系統(數值孔隙NA等)。即，細微圖案之線寬小時，當i線側(短波長側)之強度高時，光學系統之數值孔隙NA大時，更易解 析。In the exposure step using the photomask of the present invention, a well-known large reticle aligner can be used. The wavelength of the light source can use the wavelength range from i line to g line. Further, the wavelength region of the light source wavelength may be selected according to the line width of the fine pattern of the present invention, or the optical system (numerical aperture NA or the like) may be adjusted. That is, when the line width of the fine pattern is small, when the intensity of the i-line side (short wavelength side) is high, the numerical aperture NA of the optical system is large, and it is easier to solve. Analysis.
本發明之光罩可於同一基板上具有由上述半透光膜所產生之細微圖案以外之圖案或區域。光罩亦可，例如，具有不具細微圖案之半透光膜部份。不具有此細微圖案之半透光膜部份藉由將曝光光之透射量較透明基板部份(透光部)減低預定量，可控制形成於被轉印體上之光阻圖案之顯像後之殘留膜厚值。此時使用之半透光膜之素材與具有上述細微圖案之半透光膜相同在製造上簡便、有利。再者，亦可於同一基板上具有例如具線寬不到3μm之細微圖案之遮光膜圖案。具有此種細微圖案之遮光膜圖案在一般之液晶顯示裝置用曝光裝置之曝光條件下，將曝光光之透射量較透明基板部份減低預定量，可控制形成於被轉印體上之光阻圖案之顯影後之殘留膜厚值。即，在上述半透光膜之細微圖案解析之光學條件中，可為不將由遮光膜所產生之細微圖案解析者。The photomask of the present invention may have a pattern or region other than the fine pattern produced by the semi-transmissive film on the same substrate. The photomask can also, for example, have a semi-transmissive film portion that does not have a fine pattern. The semi-transmissive film portion not having the fine pattern can control the image of the photoresist pattern formed on the transfer target by reducing the transmission amount of the exposure light by a predetermined amount from the transparent substrate portion (light transmitting portion) by a predetermined amount. The residual film thickness value afterwards. The material of the semi-transmissive film used at this time is simple and advantageous in manufacturing as the semi-transmissive film having the above-described fine pattern. Further, it is also possible to have a light-shielding film pattern having a fine pattern having a line width of less than 3 μm on the same substrate. The light-shielding film pattern having such a fine pattern can reduce the transmission amount of the exposure light by a predetermined amount compared with the transparent substrate portion under the exposure conditions of the exposure apparatus for a general liquid crystal display device, and can control the light resistance formed on the transferred body. The residual film thickness value after development of the pattern. That is, in the optical conditions for the fine pattern analysis of the semi-transmissive film, the fine pattern generated by the light-shielding film may not be resolved.
再者，亦可於同一基板上具有不具細微圖案之遮光膜圖案。如此，使用具有包含由半透光膜所產生之細微圖案之複數種圖案之光罩，對具有光阻膜之被轉印體進行曝光時，可形成複數光阻殘留膜厚值之光阻段差，使用作為所謂之多色調(multitone)光罩。Furthermore, it is also possible to have a light-shielding film pattern having no fine pattern on the same substrate. Thus, when a light-receiver having a plurality of patterns including the fine patterns generated by the semi-transmissive film is used, when the object to be transferred having the photoresist film is exposed, the retardation of the thickness of the plurality of photoresist residual films can be formed. Used as a so-called multitone mask.
例如，如第1(a)圖所例示，本發明之光罩20可於透明基板21上形成由不具有細微圖案之遮光膜22構成之遮光部24、由不具有細微圖案之半透光膜23構成之半透光部 25、由半透光膜23構成之細微圖案部26(以由透光部及半透光膜23所形成之半透光部構成)、透光部(透明基板21露出)27之4個或4個以上之區域。For example, as illustrated in FIG. 1(a), the photomask 20 of the present invention can form a light-shielding portion 24 composed of a light-shielding film 22 having no fine pattern on the transparent substrate 21, and a semi-transparent film having no fine pattern. 23 semi-transparent part 25. The fine pattern portion 26 (consisting of the semi-transmissive portion formed by the light transmitting portion and the semi-transmissive film 23) and the light transmitting portion (the transparent substrate 21 exposed) 27 composed of the semi-transmissive film 23 or More than 4 areas.
本發明亦提供上述光罩之製造方法。即，本發明之光罩之製造方法，該光罩係藉由將形成於透明基板上之半透光膜圖案化而形成預定圖案，且具有透光部及半透光部，藉由透射該光罩之曝光光，於被轉印體上形成線寬不到3μm之轉印圖案，該光罩之製造方法係藉由於前述透光部或前述半透光部之至少一方形成包含不到3μm之線寬部份，且由前述透光部及前述半透光部構成之圖案而得。The present invention also provides a method of manufacturing the above-described photomask. That is, in the method of manufacturing a photomask according to the present invention, the photomask is formed by patterning a semi-transmissive film formed on a transparent substrate to form a predetermined pattern, and has a light transmitting portion and a semi-transmissive portion. The exposure light of the photomask forms a transfer pattern having a line width of less than 3 μm on the transfer target, and the photomask is manufactured by the method of forming at least one of the light transmitting portion or the semi-transmissive portion to be less than 3 μm. The line width portion is obtained by a pattern composed of the light transmitting portion and the semi-light transmitting portion.
如前述，根據以上述製造方法而得之光罩，實際上可將不到3μm之尺寸之細微圖案轉印至被轉印體上，進而，亦可於被轉印體上形成具有2μm以下之線寬之圖案。As described above, according to the photomask obtained by the above-described production method, a fine pattern having a size of less than 3 μm can be actually transferred onto the transfer target body, and further, it can be formed on the transfer target body to have a size of 2 μm or less. Line width pattern.
在此，若為於透明基板上具有半透光膜、遮光膜之本發明之光罩時，可以由以下之步驟獲得。Here, in the case of the photomask of the present invention having a semi-transmissive film or a light-shielding film on a transparent substrate, it can be obtained by the following steps.
(1)準備於透明基板上依序積層有半透光膜及遮光膜之光罩胚料(photomask blank)，於該光罩胚料上形成對應於遮光部及半透光部之區域之光阻圖案，將該光阻圖案作為遮罩，蝕刻露出之遮光膜。將該光阻圖案或以該光阻圖案作為遮罩而形成之遮光膜圖案作為遮罩，將露出之半透光膜蝕刻，藉此，形成透光部。接著，至少於包含不作為遮光部之處之區域形成光阻圖案，將該光阻圖案作為遮罩，蝕刻露出之遮光膜，藉此，形成半透光部及遮光部。如此 進行，可獲得於透明基板上分別形成有由包含細微圖案之半透光膜構成之半透光部、由遮光膜與半透光膜之積層膜構成之遮光部、透光部之光罩。(1) A photomask blank having a semi-transmissive film and a light-shielding film is sequentially laminated on the transparent substrate, and light corresponding to the light-shielding portion and the semi-transmissive portion is formed on the photomask blank The resist pattern is used as a mask to etch the exposed light-shielding film. The light-shielding pattern or the light-shielding film pattern formed with the photoresist pattern as a mask is used as a mask, and the exposed semi-transmissive film is etched, thereby forming a light-transmitting portion. Next, a photoresist pattern is formed at least in a region where the light-shielding portion is not included, and the light-shielding film is etched by using the photoresist pattern as a mask, thereby forming a semi-transmissive portion and a light-shielding portion. in this way In the transparent substrate, a light-shielding portion formed of a semi-transmissive film including a fine pattern, a light-shielding portion composed of a laminated film of the light-shielding film and the semi-transmissive film, and a light-transmitting portion can be obtained.
此外，為於半透光部形成細微圖案，在上述步驟中，第1次之光阻圖案化製程中，於半透光部繪製不到3μm之細微圖案。Further, in order to form a fine pattern in the semi-transmissive portion, in the above-described step, in the first photoresist patterning process, a fine pattern of less than 3 μm is drawn in the semi-transmissive portion.
(2)準備於透明基板上形成有遮光膜之光罩胚料，於該光罩胚料上形成對應於遮光部之區域之光阻圖案，將該光阻圖案作為遮罩，蝕刻露出之遮光膜，藉此，形成遮光膜圖案。接著，去除光阻圖案後，全面形成半透光膜。然後，於對應於遮光部及半透光部之區域形成光阻圖案，以該光阻圖案作為遮罩，蝕刻露出之半透光膜，藉此，形成透光部及半透光部。如此進行，可獲得於透明基板上分別形成有由包含細微圖案之半透光膜構成之半透光部、由遮光膜與半透光膜之積層膜構成之遮光部、透光部之光罩。(2) preparing a mask blank having a light-shielding film formed on the transparent substrate, forming a photoresist pattern corresponding to the region of the light-shielding portion on the mask blank, and using the photoresist pattern as a mask to etch the exposed light The film thereby forms a light shielding film pattern. Next, after the photoresist pattern is removed, a semi-transmissive film is formed in its entirety. Then, a photoresist pattern is formed in a region corresponding to the light shielding portion and the semi-light transmitting portion, and the exposed light semi-transmissive film is etched by using the photoresist pattern as a mask, whereby the light transmitting portion and the semi-light transmitting portion are formed. In this way, a light-shielding portion formed of a semi-transmissive film including a fine pattern, a light-shielding portion composed of a laminated film of a light-shielding film and a semi-transmissive film, and a light-shielding portion can be obtained on the transparent substrate. .
此外，為於半透光部形成細微圖案，在上述步驟中，第2次之光阻圖案化製程中，於半透光部繪製不到3μm之細微圖案。Further, in order to form a fine pattern in the semi-transmissive portion, in the above-described step, in the second photoresist patterning process, a fine pattern of less than 3 μm is drawn in the semi-transmissive portion.
(3)又，於與上述(2)相同之光罩胚料上形成對應於遮光部及透光部之區域之光阻圖案，以該光阻圖案作為遮罩，將露出之遮光膜蝕刻，藉此，使對應於半透光部之區域之透明基板露出。接著，去除光阻圖案後，全面形成半透光膜，於對應於遮光部及半透光部之區域形成光阻圖 案，以該光阻圖案作為遮罩，蝕刻露出之半透光膜(以及半透光膜及遮光膜)。如此進行，可於透明基板分別上形成透光部、遮光部及包含細微圖案之半透光部。(3) Further, a photoresist pattern corresponding to the light-shielding portion and the light-transmitting portion is formed on the same mask blank as in the above (2), and the exposed light-shielding film is etched by using the photoresist pattern as a mask. Thereby, the transparent substrate corresponding to the region of the semi-transmissive portion is exposed. Then, after removing the photoresist pattern, a semi-transmissive film is formed in an entire manner, and a photoresist pattern is formed in a region corresponding to the light shielding portion and the semi-light transmitting portion. In the case of using the photoresist pattern as a mask, the exposed semi-transmissive film (and the semi-transmissive film and the light-shielding film) are etched. In this manner, the light transmitting portion, the light blocking portion, and the semi-light transmitting portion including the fine pattern can be formed on the transparent substrate.
此時，為於半透光部形成細微圖案，在上述步驟中，第2次之光阻圖案化製程中，於半透光部繪製不到3μm之細微圖案。At this time, in order to form a fine pattern in the semi-transmissive portion, in the above-described step, in the second photoresist patterning process, a fine pattern of less than 3 μm is drawn in the semi-transmissive portion.
當然，本發明之光罩之製程不須限於上述(1)~(3)。Of course, the process of the photomask of the present invention is not limited to the above (1) to (3).
此外，參照顯示後述實施例之結果之第2 (a)圖、第2 (b)圖之照片可知，例如，在使用包含光罩上之半透光部之寬度為2μm或10μm，透光部之寬度為2μm之線與間隔之光罩圖案時之轉印影像(光阻圖案)中，有透光部與半透光部之轉印影像之線寬與光罩圖案不同之情形。如此，有因光罩圖案形狀，轉印影像之尺寸不同之情形。因而，較佳為設計光罩圖案時，預先考慮此要素。Further, referring to the photographs showing the second (a) and second (b) images showing the results of the examples described later, for example, the width of the semi-transmissive portion including the photomask is 2 μm or 10 μm, and the light transmitting portion is used. In the transfer image (resist pattern) in which the width of the line of 2 μm and the interval of the mask pattern are different, the line width of the transfer image of the light transmitting portion and the semi-light transmitting portion is different from that of the mask pattern. Thus, there are cases where the size of the transferred image differs depending on the shape of the mask pattern. Therefore, it is preferable to consider this element in advance when designing the mask pattern.
舉例言之，預先求出在預定之曝光條件下之光罩上具有不到3μm之線寬部份之透光部或半透光部之線寬與形成於對應於其之被轉印體上之光阻圖案線寬之相關關係，依所求出之相關關係，決定形成於光罩之透光部或半透光部之線寬。然後，較佳為依所決定之線寬尺寸，在光罩上形成由前述透光部及半透光部構成之光罩圖案。For example, the line width of the light transmitting portion or the semi-light transmitting portion having a line width portion of less than 3 μm on the photomask under predetermined exposure conditions is previously determined and formed on the object to be transferred corresponding thereto The correlation between the line widths of the photoresist patterns is determined according to the correlation relationship determined, and the line width formed in the light transmitting portion or the semi-light transmitting portion of the photomask is determined. Then, it is preferable that a mask pattern composed of the light transmitting portion and the semi-light transmitting portion is formed on the photomask according to the determined line width dimension.
又，本發明提供使用上述光罩之圖案轉印方法。即，能使用上述光罩，以365nm~436nm之波長範圍之曝光光，進行對被轉印體之曝光。藉此，在現況之液晶顯示裝置用 曝光條件之基礎下，亦可以足夠之解析度，轉印具有線寬不到3μm之圖案。此外，如上述，亦可適當調整波長區內之強度分佈或光學系統之NA等。Further, the present invention provides a pattern transfer method using the above-described photomask. In other words, the exposure of the object to be transferred can be performed by using the above-described photomask with exposure light in the wavelength range of 365 nm to 436 nm. Thereby, in the current state of the liquid crystal display device On the basis of the exposure conditions, it is also possible to transfer a pattern having a line width of less than 3 μm with sufficient resolution. Further, as described above, the intensity distribution in the wavelength region or the NA of the optical system or the like can be appropriately adjusted.
如前述第1 (a)圖例示，以曝光光40將於透明基板21上形成有遮光部24、不具有細微圖案之半透光部25、由半透光膜23構成之細微圖案部26及透光部27之光罩20曝光，而將圖案轉印至被轉印體30上之光阻膜(正型)33時，如第1 (b)圖所示，於被轉印體上30形成由顯影後之厚膜殘留膜區域33a、薄膜殘留膜區域33b、對應於上述光罩上之細微圖案部26之細微圖案區域33c及實質上無殘留膜之區域33d構成之轉印圖案(光阻圖案)。此外，在第1 (a)圖、第1 (b)圖中，符號32a、32b表示在被轉印體30，積層於基板31上之膜。As shown in the first (a) above, the light-shielding portion 24, the semi-transmissive portion 25 having no fine pattern, and the fine pattern portion 26 composed of the semi-transmissive film 23 are formed on the transparent substrate 21 by the exposure light 40. When the photomask 20 of the light transmitting portion 27 is exposed, and the pattern is transferred to the photoresist film (positive type) 33 on the transfer target 30, as shown in FIG. 1(b), on the object to be transferred 30 A transfer pattern (light) formed by the developed thick film residual film region 33a, the film residual film region 33b, the fine pattern region 33c corresponding to the fine pattern portion 26 on the photomask, and the region 33d having substantially no residual film is formed. Resistance pattern). Further, in the first (a) and first (b) drawings, reference numerals 32a and 32b denote a film laminated on the substrate 31 on the transfer target 30.
習知液晶顯示裝置製造用大型光罩適用以曝光解析，轉印之圖案通常超過3μm之線寬。這對依顯示裝置之像素數所大概決定之圖案之間距，上述尺寸精確度已足夠。進而，在使用光罩之曝光過程中，由於需大面積曝光，為了有效率之曝光，而需大光量，通常使用橫跨i線至g線之區域之波長，而與半導體製造用之步進機(適用雷射單一波長)等不同，解析度變得比單一波長低，此亦成為解析度受限之一個原因。然而，根據本發明，即使應用此現狀之曝光條件，仍可獲得習知以上之實質之解析度，而可轉印更精細之圖案。Conventional large-sized photomasks for manufacturing liquid crystal display devices are suitable for exposure analysis, and the pattern of transfer usually exceeds a line width of 3 μm. The above-mentioned dimensional accuracy is sufficient for the distance between the patterns which are roughly determined by the number of pixels of the display device. Further, in the exposure process using the photomask, since a large-area exposure is required, a large amount of light is required for efficient exposure, and a wavelength spanning the area from the i-line to the g-line is generally used, and the step for semiconductor fabrication is used. The resolution (applicable to a single laser wavelength) is different, and the resolution becomes lower than a single wavelength, which is also a cause of limited resolution. However, according to the present invention, even if the exposure conditions of the present state are applied, the above-described substantial resolution can be obtained, and a finer pattern can be transferred.
然而，以曝光轉印本發明之半透光膜之細微圖案時，曝光光之透射量大於由一般二值化光罩(binary mask)之遮光膜所形成之遮光圖案部之曝光光透射量。因此，轉印由半透光膜所形成之細微圖案部時之被轉印體上之光阻殘留膜值小於轉印一般之遮光膜圖案時之光阻殘留膜值(此為正型光阻之情形，負型光阻則相反)。此時，在曝光後之光阻之顯影製程中，藉適當調整條件，可將光阻殘留膜值調節成適合，而可適當地進行之後之被轉印體之蝕刻製程。However, when the fine pattern of the semi-transmissive film of the present invention is exposed and exposed, the amount of exposure light transmitted is larger than the amount of exposure light transmitted by the light-shielding pattern portion formed by the light-shielding film of a general binary mask. Therefore, when the fine pattern portion formed by the semi-transmissive film is transferred, the residual photoresist film value on the transfer target is smaller than the residual photoresist film value when the general light shielding film pattern is transferred (this is a positive photoresist) In the case of negative photoresist, the opposite is true). At this time, in the developing process of the photoresist after the exposure, by appropriately adjusting the conditions, the residual film value of the photoresist can be adjusted to be suitable, and the subsequent etching process of the transferred body can be appropriately performed.
此外，使用本發明之光罩，將圖案轉印至被轉印體後，相對於被轉印體之蝕刻製程，光阻膜厚不足時，將光阻膜塗布於被轉印體前，構成被轉印體之膜預先形成具蝕刻選擇性之材質(例如含有金屬或SiO2等之材料)之極薄膜。然後，亦可採用將在上述圖案轉印形成之光阻圖案作為遮罩，將上述極薄膜蝕刻，以此膜作為遮罩，蝕刻下層側之膜之方法。Further, after the pattern is transferred to the object to be transferred by the photomask of the present invention, when the thickness of the photoresist film is insufficient with respect to the etching process of the object to be transferred, the photoresist film is applied to the object to be transferred, and the film is formed. The film of the transfer target body is formed in advance as an electrode film having an etch-selective material (for example, a material containing metal or SiO 2 or the like). Then, a method of etching the above-mentioned electrode film by using the photoresist pattern formed by the above-described pattern transfer as a mask, and using the film as a mask to etch the film on the lower layer side may be employed.
以下，以實施例，進一步說明本發明。Hereinafter, the present invention will be further described by way of examples.
透明基板使用合成石英基板，於該透明基板上，以濺鍍法將由MoSi化合物構成之半透光膜形成預定膜厚。該半透光膜設定膜厚，以使在後述圖案轉印使用之曝光機之曝光光(365nm~436nm之波長範圍)內之g線中，透射率為50%(令透明基板之曝光光之透射率為100%時)。此時，透射形成有半透光膜之部份之曝光光之相對於透射透明基 板之曝光光之相位差不到60度。然後，於該半透光膜上塗布正型光阻，準備光罩胚料。As the transparent substrate, a synthetic quartz substrate on which a semi-transmissive film composed of a MoSi compound is formed into a predetermined film thickness by sputtering is used. The semi-transmissive film has a film thickness such that the transmittance is 50% in the g line in the exposure light (the wavelength range of 365 nm to 436 nm) of the exposure machine used for the pattern transfer described later (the exposure light of the transparent substrate is made). When the transmittance is 100%). At this time, the exposure light of the portion in which the semi-transmissive film is formed is transmitted relative to the transmissive transparent substrate The phase difference of the exposure light of the board is less than 60 degrees. Then, a positive photoresist is coated on the semi-transmissive film to prepare a photomask blank.
於此光罩胚料描繪線部及間隔部寬度皆2μm之線與間隔圖案，顯影而作為光阻圖案，將該光阻圖案作為遮罩，蝕刻上述半透光膜，而獲得光罩。所獲得之光罩，形成線部(半透光部)及間隔部(透光部)皆寬度2μm之線與間隔圖案。In the mask blank, a line and a space pattern each having a line portion and a width of 2 μm were drawn, developed as a photoresist pattern, and the photoresist pattern was used as a mask to etch the semi-transmissive film to obtain a mask. The obtained photomask was formed into a line and space pattern having a width of 2 μm both in the line portion (semi-transmissive portion) and the spacer portion (light-transmitting portion).
使用如此進行而得之光罩，於形成有正型光阻膜之被轉印體上使用上述曝光機曝光，於第2 (a)圖顯示顯影而得之被轉印體上之光阻圖案之照片。此外，此光阻圖案之線寬為1.84μm，間隔寬度為2.30μm。Using the photomask thus obtained, the exposure film formed on the positive resist film is exposed by the exposure machine, and the second (a) image shows the resist pattern on the transfer target obtained by development. Photo. Further, the photoresist pattern has a line width of 1.84 μm and a space width of 2.30 μm.
又，在上述透明基板上製作以上述半透光膜同樣地形成有線部之寬度10μm、間隔部之寬度2μm之線與間隔圖案之光罩，使用此光罩，於被轉印體上使用上述曝光機曝光，於第2 (b)圖顯示顯影而得之被轉印體上之光阻圖案之照片。此外，此光阻圖案之線寬為10.38μm，間隔寬度為1.56μm。Further, on the transparent substrate, a mask having a line portion having a width of 10 μm and a width of 2 μm in the width of the spacer portion is formed in the same manner as the semi-transmissive film, and the photomask is used for the transfer target. The exposure machine was exposed, and a photograph of the photoresist pattern on the transfer target obtained by development was shown in Fig. 2(b). Further, the photoresist pattern has a line width of 10.38 μm and a space width of 1.56 μm.
觀看第2 (a)圖、第2 (b)圖之照片可知，根據本發明，將具有不到3μm線寬之部份之圖案解析，於被轉印體上形成線寬不到3μm之轉印圖案。Looking at the photographs of Figs. 2(a) and 2(b), according to the present invention, a pattern having a portion having a line width of less than 3 μm is analyzed, and a line width of less than 3 μm is formed on the transfer target. Printed pattern.
以下，說明相對於本發明實施例之比較例。Hereinafter, a comparative example with respect to the embodiment of the present invention will be described.
於與上述實施例相同之透明基板上，以濺鍍法，將由Cr構成之遮光膜形成預定膜厚，於該遮光膜上塗布與上述 實施例相同之正型光阻，準備光罩胚料。a light-shielding film made of Cr is formed into a predetermined film thickness by sputtering on the same transparent substrate as the above embodiment, and coated on the light-shielding film and the above In the same positive photoresist as in the embodiment, a reticle blank was prepared.
於此光罩胚料描繪線部及間隔部寬度皆2μm之線與間隔圖案，顯影而作為光阻圖案，將該光阻圖案作為遮罩，蝕刻上述遮光膜，而獲得光罩。所獲得之光罩形成線部(遮光部)及間隔部(透光部)皆寬度2μm之線與間隔圖案。In the mask blank, a line and a space pattern each having a line portion and a width of 2 μm were drawn and developed as a resist pattern, and the photoresist pattern was used as a mask to etch the light-shielding film to obtain a photomask. The obtained mask-forming line portion (light-shielding portion) and the partition portion (light-transmitting portion) were both line-and-space patterns having a width of 2 μm.
使用如此進行而得之光罩，於形成有正型光阻膜之被轉印體上使用用於實施例之曝光機曝光，於第2 (c)圖顯示顯影而得之被轉印體上之光阻圖案之照片。Using the reticle thus obtained, the exposure machine for the positive-type resist film is used for exposure by the exposure machine of the embodiment, and the image of the image-transferred body is developed by the second (c) image. A photo of the photoresist pattern.
又，在上述透明基板上製作藉由上述遮光膜同樣地形成有線部之寬度10μm、間隔部之寬度2μm之線與間隔圖案之光罩，使用此光罩，於被轉印體上使用上述曝光機曝光，於第2 (d)圖顯示顯影後而得之被轉印體上之光阻圖案之照片。Further, on the transparent substrate, a mask having a line portion having a width of 10 μm and a width of 2 μm in the width of the spacer portion is formed in the same manner as the light-shielding film, and the photomask is used to apply the exposure to the object to be transferred. The machine is exposed, and in the second (d) figure, a photograph of the photoresist pattern on the transferred body obtained after development is shown.
觀看第2 (c)圖、第2 (d)圖之照片可知，根據以Cr遮光膜形成有細微圖案之光罩之本比較例，無法將具有不到3μm之線寬之部份之圖案解析，而無法於被轉印體上形成線寬不到3μm之轉印圖案。Looking at the photographs of the second (c) and the second (d), it can be seen that the pattern of the portion having the line width of less than 3 μm cannot be analyzed based on the comparative example in which the mask having the fine pattern of the Cr light-shielding film is formed. However, a transfer pattern having a line width of less than 3 μm cannot be formed on the transferred body.
以上，依較佳實施形態，說明了本發明，但本發明不限於上述實施形態是無須贅言的。The present invention has been described above on the basis of preferred embodiments, but the present invention is not limited to the above embodiments.
1‧‧‧玻璃基板1‧‧‧ glass substrate
2‧‧‧閘極電極2‧‧‧gate electrode
3‧‧‧閘極絶緣膜3‧‧‧gate insulating film
4‧‧‧第1半導體膜4‧‧‧1st semiconductor film
5‧‧‧第2半導體膜5‧‧‧2nd semiconductor film
6‧‧‧源極/汲極用金屬膜6‧‧‧Metal/bungee metal film
6a‧‧‧源極6a‧‧‧ source
6b‧‧‧汲極6b‧‧‧Bungee
7‧‧‧正型光阻膜7‧‧‧Positive photoresist film
7a‧‧‧第1光阻圖案7a‧‧‧1st photoresist pattern
7b‧‧‧第2光阻圖案7b‧‧‧2nd photoresist pattern
10‧‧‧灰階光罩10‧‧‧ Grayscale mask
11‧‧‧遮光部11‧‧‧Lighting Department
11a‧‧‧對應於源極之遮光部11a‧‧‧ corresponds to the source of the sunscreen
11b‧‧‧對應於汲極之遮光部11b‧‧‧ corresponds to the breeze of the bungee
12‧‧‧透光部12‧‧‧Transmission Department
13‧‧‧半透光部13‧‧‧ semi-transmission department
13a‧‧‧遮光圖案13a‧‧‧Lighting pattern
20‧‧‧光罩20‧‧‧Photomask
21‧‧‧透明基板21‧‧‧Transparent substrate
22‧‧‧遮光膜22‧‧‧Shade film
23‧‧‧半透光膜23‧‧‧ Semi-transparent film
24‧‧‧遮光部24‧‧‧Lighting Department
25‧‧‧半透光部25‧‧‧ semi-transmission department
26‧‧‧細微圖案部26‧‧‧Small pattern department
27‧‧‧透光部27‧‧‧Transmission Department
30‧‧‧被轉印體30‧‧‧Transferable body
31‧‧‧基板31‧‧‧Substrate
32a、32b‧‧‧膜32a, 32b‧‧‧ film
33‧‧‧光阻膜33‧‧‧Photoresist film
33a‧‧‧厚膜殘留膜區域33a‧‧‧Thick film residual film area
33b‧‧‧薄膜殘留膜區域33b‧‧‧film residual film area
33c‧‧‧細微圖案區域33c‧‧‧Subtle pattern area
33d‧‧‧無殘留膜區域33d‧‧‧No residual film area
40‧‧‧曝光光40‧‧‧Exposure light
第1 (a)圖、第1 (b)圖係用以說明使用本發明光罩之圖案轉印方法之截面圖。Figs. 1(a) and 1(b) are cross-sectional views for explaining a pattern transfer method using the photomask of the present invention.
第2 (a)圖、第2 (b)圖係以本發明實施例之圖案轉 印而得之被轉印體上之光阻圖案之照片，第2 (c)圖、第2 (d)圖係以比較例之圖案轉印而得之被轉印體上之光阻圖案之照片。The second (a) and the second (b) are rotated by the pattern of the embodiment of the present invention. Photograph of the photoresist pattern on the printed object to be printed, and the second (c) and the second (d) are the photoresist patterns on the transferred body obtained by transferring the pattern of the comparative example. photo.
第3 (a)圖～第3 (c)圖係顯示使用灰階光罩之TFT基板之製程之概略截面圖。3(a) to 3(c) are schematic cross-sectional views showing a process of using a TFT substrate of a gray scale mask.
第4 (a)圖～第4 (c)圖係顯示接續第3 (a)圖～第3 (c)圖之製程之使用灰階光罩之TFT基板之製程之概略截面圖。4(a) to 4(c) are schematic cross-sectional views showing a process of using a TFT substrate using a gray scale mask in the processes of Figs. 3(a) to 3(c).
第5圖係顯示習知細微圖案類型之灰階光罩一例之平面圖。Fig. 5 is a plan view showing an example of a gray scale mask of a conventional fine pattern type.
20‧‧‧光罩20‧‧‧Photomask
21‧‧‧透明基板21‧‧‧Transparent substrate
22‧‧‧遮光膜22‧‧‧Shade film
23‧‧‧半透光膜23‧‧‧ Semi-transparent film
24‧‧‧遮光部24‧‧‧Lighting Department
25‧‧‧半透光部25‧‧‧ semi-transmission department
26‧‧‧細微圖案部26‧‧‧Small pattern department
27‧‧‧透光部27‧‧‧Transmission Department
30‧‧‧被轉印體30‧‧‧Transferable body
31‧‧‧基板31‧‧‧Substrate
32a、32b‧‧‧膜32a, 32b‧‧‧ film
33‧‧‧光阻膜33‧‧‧Photoresist film
33a‧‧‧厚膜殘留膜區域33a‧‧‧Thick film residual film area
33b‧‧‧薄膜殘留膜區域33b‧‧‧film residual film area
33c‧‧‧細微圖案區域33c‧‧‧Subtle pattern area
33d‧‧‧殘留膜區域33d‧‧‧Residual membrane area
40‧‧‧曝光光40‧‧‧Exposure light
Claims (10)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007188335 | 2007-07-19 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200925774A TW200925774A (en) | 2009-06-16 |
| TWI422961B true TWI422961B (en) | 2014-01-11 |
Family
ID=40268696
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097126216A TWI422961B (en) | 2007-07-19 | 2008-07-11 | Photomask and method of manufacturing the same, method of transferring a pattern, and method of manufacturing a display device |
Country Status (4)
| Country | Link |
|---|---|
| JP (2) | JP5244485B2 (en) |
| KR (2) | KR101127355B1 (en) |
| CN (1) | CN101349864B (en) |
| TW (1) | TWI422961B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9679803B2 (en) | 2014-01-13 | 2017-06-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for forming different patterns in a semiconductor structure using a single mask |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101194151B1 (en) | 2009-06-23 | 2012-12-24 | 호야 가부시키가이샤 | Multi-gray scale photomask, pattern transfer method, and method of manufacturing thin firm transistor |
| WO2010150355A1 (en) * | 2009-06-23 | 2010-12-29 | Hoya株式会社 | Multilevel gradation photomask |
| CN101943854B (en) * | 2009-07-03 | 2012-07-04 | 深圳清溢光电股份有限公司 | Design method of half-exposure region of half-gray-scale mask plate and manufacture method thereof |
| JP5409238B2 (en) * | 2009-09-29 | 2014-02-05 | Ｈｏｙａ株式会社 | Photomask, photomask manufacturing method, pattern transfer method, and pixel electrode manufacturing method for display device |
| JP2011215197A (en) * | 2010-03-31 | 2011-10-27 | Hoya Corp | Photomask and method for manufacturing the same |
| WO2012005524A2 (en) * | 2010-07-08 | 2012-01-12 | Lg Innotek Co., Ltd. | The printed circuit board and the method for manufacturing the same |
| KR101149023B1 (en) * | 2010-07-08 | 2012-05-24 | 엘지이노텍 주식회사 | Manufacturing method for printed circuit board and printed circuit board produced by the method |
| JP2012212124A (en) * | 2011-03-23 | 2012-11-01 | Hoya Corp | Method for manufacturing photomask, method for transferring pattern, and method for manufacturing display device |
| JP2012212125A (en) * | 2011-03-24 | 2012-11-01 | Hoya Corp | Method for manufacturing photomask, method for transferring pattern, and method for manufacturing display device |
| CN103998985B (en) * | 2011-12-21 | 2018-04-03 | 大日本印刷株式会社 | Large phase shift mask and manufacturing method of large phase shift mask |
| JP6139826B2 (en) * | 2012-05-02 | 2017-05-31 | Hoya株式会社 | Photomask, pattern transfer method, and flat panel display manufacturing method |
| JP6081716B2 (en) * | 2012-05-02 | 2017-02-15 | Hoya株式会社 | Photomask, pattern transfer method, and flat panel display manufacturing method |
| JP6093117B2 (en) * | 2012-06-01 | 2017-03-08 | Hoya株式会社 | Photomask, photomask manufacturing method, and pattern transfer method |
| CN104765245A (en) * | 2015-04-10 | 2015-07-08 | 深圳市华星光电技术有限公司 | Gray-tone mask and preparation method thereof |
| JP6767735B2 (en) * | 2015-06-30 | 2020-10-14 | Hoya株式会社 | Photomasks, photomask design methods, photomask blanks, and display device manufacturing methods |
| JP6557638B2 (en) * | 2016-07-06 | 2019-08-07 | 株式会社エスケーエレクトロニクス | Halftone mask and halftone mask blanks |
| JP6573591B2 (en) * | 2016-09-13 | 2019-09-11 | Hoya株式会社 | Photomask manufacturing method, photomask, and display device manufacturing method |
| JP2017072842A (en) * | 2016-11-09 | 2017-04-13 | Hoya株式会社 | Photomask manufacturing method, photomask, pattern transfer method, and flat panel display manufacturing method |
| KR102032188B1 (en) | 2017-08-11 | 2019-10-15 | 이용구 | Portable shield plate |
| JP6500076B2 (en) * | 2017-12-05 | 2019-04-10 | Hoya株式会社 | Photomask manufacturing method and photomask substrate |
| CN108196421B (en) * | 2017-12-14 | 2021-03-05 | 深圳市路维光电股份有限公司 | Method for manufacturing gray-scale mask |
| JP6715360B2 (en) * | 2019-02-05 | 2020-07-01 | Hoya株式会社 | Photomask substrate |
| CN113260178B (en) * | 2021-06-16 | 2021-09-28 | 广东科翔电子科技股份有限公司 | Preparation method of rigid-flex combined board high-precision circuit |
| CN114122022A (en) * | 2021-11-23 | 2022-03-01 | 京东方科技集团股份有限公司 | Array substrate, mask plate, display device and manufacturing method of array substrate |
| CN114355736B (en) * | 2022-02-23 | 2023-06-16 | 鲁东大学 | Method for preparing micron-sized double-layer structure in one step by using mask lithography technology |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060240604A1 (en) * | 2005-04-04 | 2006-10-26 | Hirotaka Yamaguchi | Thin film transistor, integrated circuit, liquid crystal display, method of producing thin film transistor, and method of exposure using attenuated type mask |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3285167B2 (en) * | 1993-08-06 | 2002-05-27 | 大日本印刷株式会社 | Gradation mask |
| KR950034748A (en) * | 1994-05-30 | 1995-12-28 | 김주용 | Photoresist pattern formation method |
| KR970008372A (en) * | 1995-07-31 | 1997-02-24 | 김광호 | Fine Pattern Formation Method of Semiconductor Device |
| JP2003173015A (en) * | 2001-09-28 | 2003-06-20 | Hoya Corp | Method of manufacturing gray tone mask |
| KR20060004276A (en) * | 2004-07-09 | 2006-01-12 | 현대모비스 주식회사 | Caliper assembly of disc brake |
| TW200639576A (en) * | 2005-02-28 | 2006-11-16 | Hoya Corp | Method of manufacturing gray level mask, gray level mask, and gray level mask blank |
| JP4850616B2 (en) * | 2005-08-12 | 2012-01-11 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
| KR101190045B1 (en) * | 2005-12-21 | 2012-10-12 | 엘지디스플레이 주식회사 | The photo mask and method of fabricating the array substrate for liquid crystal display device using the same |
| JP4005622B1 (en) * | 2006-09-04 | 2007-11-07 | ジオマテック株式会社 | Photomask substrate, photomask, and method of manufacturing the same |
-
2008
- 2008-07-11 TW TW097126216A patent/TWI422961B/en active
- 2008-07-18 CN CN2008101336974A patent/CN101349864B/en active Active
- 2008-07-18 KR KR1020080069980A patent/KR101127355B1/en active Active
- 2008-07-19 JP JP2008187980A patent/JP5244485B2/en active Active
-
2012
- 2012-01-16 KR KR1020120004711A patent/KR101357324B1/en active Active
-
2013
- 2013-04-08 JP JP2013080541A patent/JP5555789B2/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060240604A1 (en) * | 2005-04-04 | 2006-10-26 | Hirotaka Yamaguchi | Thin film transistor, integrated circuit, liquid crystal display, method of producing thin film transistor, and method of exposure using attenuated type mask |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9679803B2 (en) | 2014-01-13 | 2017-06-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for forming different patterns in a semiconductor structure using a single mask |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2009042753A (en) | 2009-02-26 |
| KR20090009155A (en) | 2009-01-22 |
| KR20120009526A (en) | 2012-01-31 |
| TW200925774A (en) | 2009-06-16 |
| KR101357324B1 (en) | 2014-02-03 |
| JP2013137576A (en) | 2013-07-11 |
| JP5244485B2 (en) | 2013-07-24 |
| KR101127355B1 (en) | 2012-03-29 |
| JP5555789B2 (en) | 2014-07-23 |
| CN101349864B (en) | 2013-04-03 |
| CN101349864A (en) | 2009-01-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI422961B (en) | Photomask and method of manufacturing the same, method of transferring a pattern, and method of manufacturing a display device | |
| TWI387845B (en) | Gray tone mask and pattern transfer method | |
| JP5254581B2 (en) | Photomask and photomask manufacturing method | |
| KR101140054B1 (en) | Multi-gray scale photomask, manufacturing method and pattern transfer method thereof | |
| JP5410839B2 (en) | Multi-tone photomask manufacturing method, multi-tone photomask, and pattern transfer method | |
| TWI393994B (en) | Method of correcting a defect in a gray tone mask, method of manufacturing a gray tone mask, gray tone mask, and method of transferring a pattern | |
| TWI745873B (en) | Photomask, method of manufacturing a photomask, and method of manufacturing a display device | |
| JP2002189280A (en) | Gray tone mask and method for producing the same | |
| CN101398611A (en) | Graytone mask plate and and graytone mask, and methof for producing the same and pattern copying method | |
| KR20140093215A (en) | Large-sized phase-shift mask, and method for producing large-sized phase-shift mask | |
| JP4934236B2 (en) | Gray tone mask blank, gray tone mask manufacturing method, gray tone mask, and pattern transfer method | |
| CN101408725A (en) | Method for manufacturing grey mask, grey mask and pattern transfer print method | |
| JP4714311B2 (en) | Multi-tone photomask manufacturing method and pattern transfer method for thin film transistor substrate | |
| TWI422963B (en) | Multi-step dimmer cover, manufacturing method thereof, and pattern transfer method | |
| TW201019045A (en) | Multi-tone photomask, pattern transfer method and method of producing a display device using the multi-tone photomask | |
| JP2009237419A (en) | Multi-gradation photomask, manufacturing method thereof, and pattern transfer method | |
| JP2009237315A (en) | Method of manufacturing multi-gradation photomask, multi-gradation photomask, and pattern transfer method | |
| JP4848071B2 (en) | 5-tone photomask manufacturing method and pattern transfer method | |
| JP2010204692A (en) | Method of manufacturing thin-film transistor substrate | |
| JP4792148B2 (en) | 5-tone photomask manufacturing method and pattern transfer method | |
| JP4714312B2 (en) | Multi-tone photomask and method of manufacturing multi-tone photomask | |
| JP4615066B2 (en) | Multi-tone photomask manufacturing method and pattern transfer method | |
| JP2009229868A (en) | Method of manufacturing gray tone mask and the tone mask, and pattern transfer method |