TWI422551B - 介電質瓷器組合物及溫度補償用積層電容器 - Google Patents
介電質瓷器組合物及溫度補償用積層電容器 Download PDFInfo
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- 239000000919 ceramic Substances 0.000 title claims description 45
- 239000000203 mixture Substances 0.000 title claims description 24
- 239000003990 capacitor Substances 0.000 title claims description 23
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 17
- 239000010953 base metal Substances 0.000 claims description 13
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 10
- 229910052573 porcelain Inorganic materials 0.000 claims description 6
- 239000000843 powder Substances 0.000 description 22
- 239000002994 raw material Substances 0.000 description 20
- 238000002156 mixing Methods 0.000 description 19
- 230000006866 deterioration Effects 0.000 description 15
- 239000002904 solvent Substances 0.000 description 7
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 239000011230 binding agent Substances 0.000 description 6
- 230000002950 deficient Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000000635 electron micrograph Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 239000012298 atmosphere Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- 238000001354 calcination Methods 0.000 description 3
- 229910010293 ceramic material Inorganic materials 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 2
- 239000001856 Ethyl cellulose Substances 0.000 description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 2
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 238000007606 doctor blade method Methods 0.000 description 2
- 229920001249 ethyl cellulose Polymers 0.000 description 2
- 235000019325 ethyl cellulose Nutrition 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 2
- 238000010298 pulverizing process Methods 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 2
- 238000005303 weighing Methods 0.000 description 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- 229910008651 TiZr Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000001027 hydrothermal synthesis Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- 238000010532 solid phase synthesis reaction Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1236—Ceramic dielectrics characterised by the ceramic dielectric material based on zirconium oxides or zirconates
- H01G4/1245—Ceramic dielectrics characterised by the ceramic dielectric material based on zirconium oxides or zirconates containing also titanates
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Description
本發明係關於一種例如用於溫度補償用積層電容器之介電質瓷器組合物,更詳細而言,係關於一種(CaSr)(TiZr)O3
系介電質瓷器組合物及使用該瓷器組合物之溫度補償用積層電容器。
先前,提出有各種具有包含Ni或Ni合金等卑金屬之內部電極之積層電容器。將具有包含卑金屬之內部電極之陶瓷成型體在大氣中煅燒時,有內部電極氧化之虞。因此,必須在還原氣氛下同時煅燒包含介電質瓷器組合物之陶瓷層與內部電極。因此,於使用包含卑金屬之內部電極之積層電容器等中,係使用非還原性介電質材料作為介電質材料。
然而,於使用非還原性介電質材料之積層電容器中,使介電質層之厚度變薄時,存在陶瓷之絕緣電阻IR經時降低,可靠性降低之問題。
於下述專利文獻1中,作為解決此種問題之材料,公開有一種非還原性介電質瓷器材料,其含有在將主成分表示為[(CaX
Sr1-X
)O]m
[(TiY
Zr1-Y
)O2
]時,滿足0x1、0Y0.10、0.75m1.04之主成分;且含有0.2~5 mol%之MnO、0.1~10 mol%之Al2
O3
、及0.5~15 mol%之由[(BaZ
Ca1-Z
)O]V
SiO2
表示、滿足0Z1且0.5V4.0之成分作為作為副成分。
[專利文獻]
[專利文獻1]日本專利特開平10-335169號公報
於使用專利文獻1記載之非還原性介電質瓷器材料,且使用Ni等卑金屬作為內部電極來構成溫度補償用積層電容器之情形時時,可抑制IR之經時劣化。然而,已知於使用專利文獻1記載之非還原性介電質瓷器材料之情形時,若放置於如耐濕負荷試驗之高濕度下,則仍然有IR經時降低之問題。
本發明之目的在於提供一種介電質瓷器組合物及使用該介電質瓷器組合物之溫度補償用積層電容器,該介電質瓷器組合物可獲得即便放置於高濕度下之環境中亦難以產生IR之劣化,即耐濕負荷壽命特性優異之積層電容器。
本發明之介電質瓷器組合物,其含有在將主成分表示為(Cax
Sr1-x
)(Tiy
Zr1-y
)O3
時,滿足0x1且0y0.50之主成分;且作為副成分,相對於主成分100莫耳份,含有0.5莫耳份以上15莫耳份以下之SiO2
、0.1莫耳份以上10莫耳份以下之MnO,進而,以0.01莫耳份以上0.079莫耳份以下之比例含有Al2
O3
。
本案發明人等為抑制使用將具有包含(Cax
Sr1-x
)(Tiy
Zr1-y
)O3
之主成分之介電質瓷器組合物加以煅燒而獲得的陶瓷之積層電容器於高濕度下之IR之經時降低而進行潛心研究,結果發現,藉由如上述,相對於主成分100莫耳份,以特定之比例調配SiO2
及MnO,進而以0.01莫耳份以上0.079莫耳份以下之比例調配Al2
O3
,可實現上述課題,以致完成本發明。特別發現若以0.079莫耳份以下之非常低比例調配之認為具有提高可靠性之作用之Al2
O3
,則反而可延長耐濕負荷壽命。認為藉由如上上述減少Al2
O3
之調配比例,可抑制由耐濕負荷引起之IR之劣化係由於以下原因。
認為由耐濕負荷引起之IR之劣化主要係由於晶界因水分或酸而劣化所引起。即,上述晶界之劣化進行至陶瓷之內部,因此產生IR之劣化。
另一方面,已知較之陶瓷粒子內部,Al會更優先地偏析至晶界。Al存在於晶界中時,可抑制因耐濕負荷引起之晶界之劣化。
然而,Al之添加量過多時,陶瓷在化學上過於穩定,與作為內部電極材料之卑金屬、例如與Ni之反應性降低。因此,陶瓷-內部電極界面之化學結合力降低。因此,容易在包含Ni之類的卑金屬之內部電極與陶瓷之界面上產生剝離。因此,認為於內部電極包含Ni之類的卑金屬之情形時,若Al之添加量過多,則較之由Al存在於晶界中所引起的晶界劣化之抑制效果,陶瓷與內部電極界面之剝離帶來之影響更大,因此,產生因耐濕負荷引起之IR之劣化。
因此,於本發明中,由於如上所述減少Al2
O3
之調配比例,故可抑制此種陶瓷-內部電極界面之化學結合力降低,藉此可抑制因耐濕負荷引起之IR之劣化。
本發明之介電質瓷器組合物係藉由於上述主成分中調配上述特定量之上述SiO2
及MnO,調配上述特定量之上述Al2
O3
而獲得。較佳為Al2
O3
之調配比例之下限為0.030莫耳份,藉由調配0.030莫耳以上,可更有效地抑制因耐濕負荷引起之IR之劣化。另外,上述Al2
O3
之調配比例之較佳上限為0.075莫耳份,在以0.075莫耳份以下之比例調配之情形時,可更有效地抑制高濕度下之IR之降低。
另外,SiO2
之調配比例之較佳上限為4.0莫耳份,於4.0莫耳份以下之情形時,可更有效地抑制高濕度下之IR之劣化。MnO之調配比例之較佳上限為4.0莫耳份,藉由以4.0莫耳份以下之比例調配MnO,可更有效地抑制高濕度下之IR之劣化。
再者,在上述主成分之組成式(Cax
Sr1-x
)(Tiy
Zr1-y
)O3
中,將(Cax
Sr1-x
)與(Tiy
Zr1-y
)之莫耳比(Cax
Sr1-x
)/(Tiy
Zr1-y
)設為m時,m為0.9以上、1.1以下之範圍即可,莫耳比m並非必須為1。即,即便上述莫耳比m於0.9~1.1之範圍內變動,亦可獲得本發明之介電質瓷器組合物之效果。
本發明之溫度補償用積層電容器具備包含本發明之介電質瓷器組合物之燒結體、及配置於該燒結體內且包含卑金屬之內部電極。將此種溫度補償用積層電容器之實施方式示於圖1。如圖1所示,積層電容器1具有陶瓷燒結體2。於陶瓷燒結體2內,包含作為金屬之Ni之複數個內部電極3a~3d係以經由陶瓷部重疊之方式配置。另外,以覆蓋燒結體2之端面2a、2b之方式形成外部電極4、5。
但本發明之溫度補償用積層電容器之具體結構不限定於圖1所示之實施方式,可適當變更。
本發明之溫度補償用積層電容器例如可藉由以下製造方法而獲得。
準備CaCO3
、SrCO3
、TiO2
、ZrO2
等作為主成分原料。對該等主成分原料,以滿足上述主成分之組成之方式,適當地調配該等原料。
再者,主成分原料之製造方法並無特別限定,亦可使用固相法、水熱法等。另外,對上述主成分原料而言,作為含有Ca、Sr、Ti及Zr之原料化合物,並不限定於碳酸化物或氧化物,亦可為氫氧化物。另外,亦可含有HfO2
等不可避免之雜質。
稱量上述主成分原料後,預燒、粉碎而獲得主成分原料粉末。藉由濕式混合等適當之方法於該主成分原料粉末中混合上述副成分原料粉末。如此準備煅燒前之原料粉末。於該原料粉末中添加有機黏合劑及溶劑,獲得陶瓷膏。作為有機黏合劑,可使用乙基纖維素或聚乙烯縮丁醛等適當之有機黏合劑樹脂。另外,溶劑亦可使用丙酮、甲苯、松脂醇等適當之溶劑。
混練上述原料粉末、有機黏合劑及溶劑,獲得陶瓷膏。使用刮刀法等適當之片材成型法將該陶瓷膏成型,獲得陶瓷生片。
而且,根據眾所周知之積層電容器之製造方法,將上述陶瓷生片與包含含有卑金屬之導電膏之內部電極,獲得積層體。藉由煅燒該積層體,可獲得燒結體。
作為卑金屬,可使用Ni、Cu或該等之合金。較佳為使用以Ni或Ni作為主成分之合金。卑金屬膏之製備可藉由眾所周知之方法混練卑金屬粉末、有機媒劑及溶劑而進行。
另外,上述陶瓷積層體之燒結及外部電極之形成可根據眾所周知之積層陶瓷介電質之製造方法進行。
再者,除上述主成分原料粉末及副成分以外,於本發明中,只要不損害本發明之目的,則亦可使用其它成分。作為此種其它成分,可舉出Sc、Y、La、Ce、Pr、Nd、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu、Nb、Mo、Ta、W之氧化物等。
本發明之介電質瓷器組合物具有上述特定之組成,特別是相對於主成分100莫耳份,以0.01莫耳份以上0.079莫耳份以下之比例含有Al2
O3
,因此,如後述實施例中所證實,可有效地抑制高濕度下之IR之經時降低。因此,藉由使用本發明之介電質瓷器組合物,可提供一種耐濕負荷特性優異之溫度補償用積層電容器。
以下,藉由列舉本發明之具體實施例,而明確本發明之效果。
準備純度99%以上之CaCO3
、SrCO3
、TiO2
及ZrO2
之各粉末作為主成分原料。以實現下述表1所示之組成之方式稱量該等粉末。稱量後,將稱量之粉末用球磨機進行濕式混合,將獲得之混合物乾燥,接著粉碎。將藉由粉碎而獲得之粉末於900℃~1300℃之溫度下預燒,再此粉碎,獲得主成分原料粉末。
準備SiO2
粉末及MnO粉末以及Al2
O3
粉末作為副成分原料。以該等副成分原料粉末相對於如上獲得之主成分原料粉末成為下述表1所示之調配比例之方式稱量上述主成分原料粉末及副成分原料粉末,使用球磨機進行濕式混合。接著,將獲得之混合物乾燥、粉碎,獲得原料粉末。於獲得之原料粉末100重量份中加入聚乙烯丁醛系黏合劑10重量份與作為溶劑之甲苯,利用球磨機進行濕式混合,製備陶瓷漿料。藉由刮刀法將獲得之陶瓷漿料成型為片狀,獲得15 cm×15 cm×厚度約6 μm之矩形之陶瓷生片。
於上述陶瓷生片上印刷Ni膏,形成內部電極用Ni膏層。作為Ni膏,使用含有作為金屬粉末之Ni粉末100重量份、作為有機媒劑之乙基纖維素7重量份、作為溶劑之松脂醇之者。
將形成有上述導電膏層之陶瓷生片以抽出導電膏層之端部交替地相反之方式積層複數片,將上下未積層導電膏層之未加工之陶瓷生片積層。如此獲得積層體。將積層體於大氣中加熱至200~800℃之溫度,使黏合劑樹脂燃燒,然後以10℃/min之升溫速度升溫,使最高溫度成為1200℃,於還原氣氛下進行煅燒。藉此獲得陶瓷燒結體。
對上述陶瓷燒結體進行滾筒研磨,使藉由導電膏之燒結而形成之內部電極露出至陶瓷燒結體之端面。於陶瓷燒結體之兩端面上塗佈Cu膏,於800℃之溫度下於氮氣氛中進行燒結。如此於陶瓷燒結體之兩端面上形成外部電極。然後,藉由滾筒電鍍於外部電極上依次形成鍍Ni層及鍍Sn層。如此獲得寬度1.2 mm×長度2.0 mm×厚度0.6 mm,內部電極間之陶瓷層之厚度為5 μm之積層電容器。再者,夾持於內部電極間之陶瓷層之層數設為100層。
根據以下之要點,對如上獲得之表1之試樣編號1~24之積層電容器進行評價。
(加熱耐濕負荷試驗):於溫度121℃、濕度100% RH、氣壓2 atm、施加電壓50 V之條件下,對100個樣品進行加速耐濕負荷試驗。經過250小時後,測定絕緣電阻IR。將IR(Ω)之值為106
以下之樣品設為耐濕負荷壽命不合格品。將每100個各試樣編號之樣品之不合格品數在下述表1中作為耐濕負荷壽命之評價結果表示。
再者,表1中試樣編號5、6、10表示本發明之範圍外之試樣。
另外,作為代表例,將試樣編號3之樣品之加熱耐濕負荷試驗後之內部電極周圍之部分之電子顯微鏡照片示於圖2。進而,將表示上述試樣編號5之樣品之加熱耐濕負荷試驗後之內部電極周圍之部分之電子顯微鏡照片示於圖3。
於試樣編號5中,因未含有Al2
O3
,另外,於試樣編號6中,因Al2
O3
之調配比例過少至0.005莫耳份,故於耐濕負荷壽命試驗中,分別於100個中產生43個及38個不合格品。實際上,如圖3所示,可知於試樣編號5之樣品中,於內部電極之周圍產生剝離。
於試樣編號10中,因此Al2
O3
之調配比例過高至0.080莫耳份,故於樣品100個中仍然產生30個不合格品。
與之相對,其它試樣編號1~4、7~9、11~24為具有本發明之範圍內之組成之介電質瓷器組合物,因此於耐濕負荷壽命試驗中,每100個樣品中之不合格品之數量顯著減少至5個以下。另外,由圖2之試樣編號3之內部電極周圍部分之電子顯微鏡照片可知,於內部電極之周圍未產生剝離。因此,由上述試樣編號1~4、7~9、11~24之結果可知,只要使用本發明之介電質瓷器組合物,即能夠可靠地抑制高濕度下之IR之劣化。
特別是於Al2
O3
之調配比例為0.030莫耳份以上之試樣編號2~4、7~9、11~17、20~24中,與試樣編號1相比,不合格品產生數更少。因此,可知Al2
O3
之調配比例較佳為0.030莫耳份以上。
另外,於試樣編號18、19中,於100個樣品中分別產生3個及4個不合格品,認為其原因在於SiO2
及MnO之調配比例稍高。即,根據SiO2
及MnO之調配比例分別為4.0莫耳份及4.0莫耳份以下之試樣編號2~4、7~9、11~17、20~24,較之試樣編號18、19,耐濕負荷壽命試驗中之不合格品數變少。因此,可知SiO2
及MnO之調配比例較佳為設為4.0莫耳份以下。
1...積層電容器
2...陶瓷燒結體
2a、2b...端面
3a~3d...內部電極
4、5...外部電極
圖1為用以說明本發明一實施方式之溫度補償用積層電容器之概略正面剖面圖。
圖2為表示作為本發明實施例之試樣編號3之樣品中之加熱耐濕負荷試驗後的內部電極周圍之部分之電子顯微鏡照片。
圖3為表示作為本發明之範圍外之試樣的試樣編號5之樣品之加熱耐濕負荷試驗後的內部電極周圍之部分之電子顯微鏡照片。
1...積層電容器
2...陶瓷燒結體
2a、2b...端面
3a~3d...內部電極
4、5...外部電極
Claims (2)
- 一種介電質瓷器組合物,其含有在將主成分表示為(Cax Sr1-x )(Tiy Zr1-y )O3 時,滿足0x1且0y0.50之主成分;且作為副成分,相對於主成分100莫耳份,含有0.5莫耳份以上15莫耳份以下之SiO2 及0.1莫耳份以上10莫耳份以下之MnO,進而,以0.030莫耳份以上0.075莫耳份以下之比例含有Al2 O3 。
- 一種溫度補償用積層電容器,其具備包含如請求項1之介電質瓷器組合物之燒結體、及配置於該燒結體內且包含卑金屬之內部電極。
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| JP4770211B2 (ja) * | 2005-03-14 | 2011-09-14 | Tdk株式会社 | 電子部品 |
-
2010
- 2010-03-17 JP JP2010061237A patent/JP5158113B2/ja active Active
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2011
- 2011-03-09 CN CN2011100591915A patent/CN102199037A/zh active Pending
- 2011-03-11 TW TW100108380A patent/TWI422551B/zh active
- 2011-03-14 KR KR1020110022355A patent/KR101469128B1/ko active Active
- 2011-03-17 US US13/050,039 patent/US8472161B2/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030125191A1 (en) * | 2001-12-27 | 2003-07-03 | Samsung Electro-Mechanics Co., Ltd. | Nonreducible dielectric ceramic composition |
| JP2003212650A (ja) * | 2002-01-24 | 2003-07-30 | Murata Mfg Co Ltd | 非還元性誘電体磁器材料、積層セラミック電子部品及びその製造方法 |
| JP2005213126A (ja) * | 2004-02-02 | 2005-08-11 | Matsushita Electric Ind Co Ltd | 耐還元性誘電体組成物及びそれを用いたセラミック電子部品 |
| JP2006327840A (ja) * | 2005-05-23 | 2006-12-07 | Tdk Corp | セラミック電子部品およびその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201210988A (en) | 2012-03-16 |
| KR101469128B1 (ko) | 2014-12-04 |
| JP2011195347A (ja) | 2011-10-06 |
| CN102199037A (zh) | 2011-09-28 |
| KR20110104891A (ko) | 2011-09-23 |
| US8472161B2 (en) | 2013-06-25 |
| JP5158113B2 (ja) | 2013-03-06 |
| US20110228443A1 (en) | 2011-09-22 |
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