TWI422052B - Ultraviolet photodetector with passivation layer - Google Patents
Ultraviolet photodetector with passivation layer Download PDFInfo
- Publication number
- TWI422052B TWI422052B TW99141424A TW99141424A TWI422052B TW I422052 B TWI422052 B TW I422052B TW 99141424 A TW99141424 A TW 99141424A TW 99141424 A TW99141424 A TW 99141424A TW I422052 B TWI422052 B TW I422052B
- Authority
- TW
- Taiwan
- Prior art keywords
- ultraviolet light
- photoelectric conversion
- layer
- passivation layer
- conversion layer
- Prior art date
Links
- 238000002161 passivation Methods 0.000 title claims description 33
- 238000006243 chemical reaction Methods 0.000 claims description 37
- 239000000758 substrate Substances 0.000 claims description 12
- 230000005611 electricity Effects 0.000 claims description 6
- XJHCXCQVJFPJIK-UHFFFAOYSA-M caesium fluoride Chemical compound [F-].[Cs+] XJHCXCQVJFPJIK-UHFFFAOYSA-M 0.000 description 8
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 7
- 239000000463 material Substances 0.000 description 5
- 238000002834 transmittance Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000007613 environmental effect Effects 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 229910000420 cerium oxide Inorganic materials 0.000 description 2
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminium flouride Chemical compound F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910005690 GdF 3 Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910001260 Pt alloy Inorganic materials 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical group [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 1
- -1 and of course Chemical compound 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000003353 gold alloy Substances 0.000 description 1
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- PCLURTMBFDTLSK-UHFFFAOYSA-N nickel platinum Chemical compound [Ni].[Pt] PCLURTMBFDTLSK-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- BYMUNNMMXKDFEZ-UHFFFAOYSA-K trifluorolanthanum Chemical compound F[La](F)F BYMUNNMMXKDFEZ-UHFFFAOYSA-K 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Light Receiving Elements (AREA)
Description
本發明是有關於一種光檢測器，特別是指一種具有鈍化層的紫外光檢測器。The present invention relates to a photodetector, and more particularly to an ultraviolet photodetector having a passivation layer.
參閱圖1，現有金屬-半導體-金屬光檢測器(Metal-Semiconductor-Metal Photodetector,MSM PD)包含一基板11、一設置於該基板11上並能接收如圖中箭頭所示的光線而發電的光電轉換層12，以及二彼此相間隔地設置於該光電轉換層12上的電極13。Referring to FIG. 1, a conventional Metal-Semiconductor-Metal Photodetector (MSM PD) includes a substrate 11 and a light source disposed on the substrate 11 and capable of receiving light as indicated by an arrow in the figure. The photoelectric conversion layer 12 and the electrodes 13 which are disposed on the photoelectric conversion layer 12 at intervals from each other.
在該光線透過所述電極13而照射於該光電轉換層12時，該光電轉換層12會因為光電效應而將光能轉換成電能，因此電訊號就會由所述電極13輸出。光線越強時，就能得到越強的電訊號，藉此達到檢測光線強度的目的。然而，由於所述電極13與該光電轉換層12的表面缺乏有效的屏障，因此就算在不照光時，該光電轉換層12也會因為外在環境、溫度的干擾而產生雜訊(Noise)。也就是說，明明沒有照光，卻產生電訊號，對光檢測器而言這是相當嚴重的缺點。When the light is transmitted through the electrode 13 and irradiated to the photoelectric conversion layer 12, the photoelectric conversion layer 12 converts light energy into electric energy due to the photoelectric effect, and thus the electric signal is output from the electrode 13. The stronger the light, the stronger the electrical signal can be obtained, thereby achieving the purpose of detecting the light intensity. However, since the surface of the electrode 13 and the photoelectric conversion layer 12 lacks an effective barrier, even when the light is not illuminated, the photoelectric conversion layer 12 generates noise due to external environment and temperature interference. That is to say, it is obvious that there is no illumination, but a telecommunication signal is generated, which is a serious drawback to the photodetector.
為了改善上述MSM PD的缺點，有研究人員提出如圖2所示，在二電極13與一光電轉換層12上披覆一層氧化矽層14作為鈍化層。氧化矽為常見的絕緣體，藉由該氧化矽層14的設置，能有效抑制環境雜訊。In order to improve the disadvantages of the MSM PD described above, researchers have proposed to coat a layer of yttria 14 as a passivation layer on the two electrodes 13 and a photoelectric conversion layer 12 as shown in FIG. Cerium oxide is a common insulator, and the arrangement of the yttria layer 14 can effectively suppress environmental noise.
然而，具有紫外光檢測器使用氧化矽或其他氧化物作 為鈍化層卻會產生問題。因為氧化矽或其他氧化物對於紫外光(特別是光波長短於360nm的紫外光)的穿透率較低，因此部分紫外光會受鈍化層阻擋而減少該光電轉換層12的紫外光吸收量，進而造成電訊號降低。也就是說，該氧化矽層14應用於紫外光檢測器上雖然也能達到降低雜訊的目的，卻也同時會導致光電流降低，而影響量測時的準確性。However, with UV detectors using yttria or other oxides A passivation layer can cause problems. Since cerium oxide or other oxides have a low transmittance for ultraviolet light (especially ultraviolet light having a wavelength shorter than 360 nm), part of the ultraviolet light is blocked by the passivation layer to reduce the amount of ultraviolet light absorption of the photoelectric conversion layer 12, This in turn causes the electrical signal to decrease. That is to say, the use of the yttrium oxide layer 14 on the ultraviolet light detector can also achieve the purpose of reducing noise, but at the same time, the photocurrent is reduced, which affects the accuracy of the measurement.
所以，如何改善以上所述的缺點，一直是本技術領域者持續努力的重要目標。Therefore, how to improve the above-mentioned shortcomings has been an important goal of continuous efforts by those skilled in the art.
因此，本發明之目的，即在提供一種能同時降低雜訊並提升紫外光穿透率的具有鈍化層的紫外光檢測器。Accordingly, it is an object of the present invention to provide an ultraviolet light detector having a passivation layer capable of simultaneously reducing noise and increasing ultraviolet light transmittance.
於是，本發明具有鈍化層的紫外光檢測器，用以檢測一紫外光線，包含一基板、一設置於該基板上的光電轉換層、一設置於該光電轉換層上的介電層、二分別設置於該介電層及該光電轉換層上的電極，及一設置於該介電層、該光電轉換層，以及所述電極上的鈍化層。Therefore, the ultraviolet light detector of the present invention has a passivation layer for detecting an ultraviolet light, comprising a substrate, a photoelectric conversion layer disposed on the substrate, a dielectric layer disposed on the photoelectric conversion layer, and two respectively An electrode disposed on the dielectric layer and the photoelectric conversion layer, and a passivation layer disposed on the dielectric layer, the photoelectric conversion layer, and the electrode.
該光電轉換層能接收該紫外光線而發電，所述電極彼此相間隔並能使該紫外光線穿透，且能在該光電轉換層吸收該紫外光線而發電時輸出電訊號。該鈍化層則是以能使該紫外光線穿透的氟化物製成。The photoelectric conversion layer can receive the ultraviolet light to generate electricity, and the electrodes are spaced apart from each other and can penetrate the ultraviolet light, and can output an electric signal when the photoelectric conversion layer absorbs the ultraviolet light to generate electricity. The passivation layer is made of fluoride which is capable of penetrating the ultraviolet light.
本發明的功效在於：在不照射紫外光時，能藉由該鈍化層降低環境干擾所產生的雜訊。而在照射紫外光時，則能藉由該鈍化層的高紫外光穿透率，使較多的紫外光到達 該光電轉換層並產生電訊號。因此，該鈍化層不只能有效地降低雜訊，同時也能提升光電流強度。The effect of the invention is that the noise generated by the environmental interference can be reduced by the passivation layer when the ultraviolet light is not irradiated. When ultraviolet light is irradiated, more ultraviolet light can be reached by the high ultraviolet light transmittance of the passivation layer. The photoelectric conversion layer generates an electrical signal. Therefore, the passivation layer can not only effectively reduce noise, but also enhance the photocurrent intensity.
有關本發明之前述及其他技術內容、特點與功效，在以下配合參考圖式之一個較佳實施例的詳細說明中，將可清楚的呈現。The above and other technical contents, features and advantages of the present invention will be apparent from the following detailed description of the preferred embodiments.
參閱圖3與圖4，為本發明具有鈍化層的紫外光檢測器的第一較佳實施例，包含一基板3、一光電轉換層4、二電極5，以及一鈍化層6。Referring to FIG. 3 and FIG. 4, a first preferred embodiment of the ultraviolet light detector having a passivation layer according to the present invention comprises a substrate 3, a photoelectric conversion layer 4, two electrodes 5, and a passivation layer 6.
在本較佳實施例中，該基板3的材料是以氧化鋁(Sapphire)作說明，當然也能以矽(Si)，或碳化矽(SiC)取代，不以此為限。In the preferred embodiment, the material of the substrate 3 is described by alumina (Sapphire), and of course, it can be replaced by bismuth (Si) or tantalum carbide (SiC), and is not limited thereto.
該光電轉換層4是設置於該基板3上並能接收紫外光線2而發電。值得一提的是，在本較佳實施例中，該光電轉換層4是以氮化鎵(GaN)作說明，當然也能使用氮化鋁(AlN)、氮化鋁鎵(AlGaN)，或氮化鋁銦鎵(AlInGaN)或其他氮化物(Nitride-Based)取代，當然也能夠使用其他具有相同功效的Ⅲ-V族化合物半導體，不應以本較佳實施例所揭露的內容為限。另外，該光電轉換層4當然也能使用氧化鋅(ZnO)、氧化銦鋅(IZO)，或氧化鋁鋅(AZO)取代，不以此為限。而在本較佳實施例中的光電轉換層4是以有機金屬化學氣相磊晶法(Metal Organic Chemical Vapor Deposition,MOCVD)沉積於該基板3上而成，當然也能夠使用分子束磊晶法(Molecular beam epitaxy,MBE) 取代，不以本較佳實施例所揭露的內容為限。The photoelectric conversion layer 4 is disposed on the substrate 3 and is capable of receiving ultraviolet light 2 to generate electricity. It should be noted that in the preferred embodiment, the photoelectric conversion layer 4 is described by gallium nitride (GaN), and of course, aluminum nitride (AlN), aluminum gallium nitride (AlGaN), or Substituting aluminum indium gallium nitride (AlInGaN) or other nitride (Nitride-Based), it is of course possible to use other III-V compound semiconductors having the same efficacy, and should not be limited to the contents disclosed in the preferred embodiment. In addition, the photoelectric conversion layer 4 can of course be replaced by zinc oxide (ZnO), indium zinc oxide (IZO), or aluminum zinc oxide (AZO), and is not limited thereto. The photoelectric conversion layer 4 in the preferred embodiment is deposited on the substrate 3 by Metal Organic Chemical Vapor Deposition (MOCVD), and of course, molecular beam epitaxy can also be used. (Molecular beam epitaxy, MBE) Instead, it is not limited to what is disclosed in the preferred embodiment.
所述電極5是彼此相間隔地設置於該光電轉換層4上，並能使該紫外光線2穿透，且能在該光電轉換層4吸收該紫外光線2而發電時輸出電訊號。每一電極5包括一設置於該光電轉換層4上的本體部51，以及多數彼此相間隔地由該本體部51朝另一電極5的本體部51方向延伸的指叉部52，所述電極5的指叉部52是彼此交錯間隔地設置。在本較佳實施例中，所述電極5是指叉狀電極5，且所述電極5的材料選用能讓紫外光通過的鎳金合金(Ni/Au)作說明，且鎳與金的厚度各為5nm。當然也可以使用鎳鉑合金(Ni/Pt)、鈦鋁金合金(Ti/Al/Ti/Au)、銦錫氧化物(Indium tin oxide,ITO)等具有相同功效的材料，不應以此為限。The electrodes 5 are disposed on the photoelectric conversion layer 4 at a distance from each other, and can penetrate the ultraviolet light 2, and can output an electric signal when the photoelectric conversion layer 4 absorbs the ultraviolet light 2 to generate electricity. Each of the electrodes 5 includes a body portion 51 disposed on the photoelectric conversion layer 4, and an interdigitated portion 52 extending from the body portion 51 toward the body portion 51 of the other electrode 5 at a distance from each other, the electrode The interdigitated portions 52 of 5 are disposed at an interval from each other. In the preferred embodiment, the electrode 5 refers to a fork electrode 5, and the material of the electrode 5 is selected from a nickel-gold alloy (Ni/Au) capable of passing ultraviolet light, and the thickness of nickel and gold. Each is 5 nm. Of course, nickel platinum alloy (Ni/Pt), titanium aluminum alloy (Ti/Al/Ti/Au), indium tin oxide (ITO) and the like having the same effect can also be used. limit.
該鈍化層6是以能使該紫外光線2穿透的氟化物(Fluoride-Based)製成並設置於該光電轉換層4與所述電極5上。特別說明的是，在本較佳實施例中，該鈍化層6的氟化物是以氟化鋰(LiF)作說明，當然也能夠使用氟化銫(CsF)、氟化銣(RbF)、氟化鎂(MgF2 )、氟化鈣(CaF2 )、氟化鑭(LaF3 )、氟化鋁(AlF3 )，或氟化釓(GdF3 )等具有類似功能的材料取代，不應以本較佳實施例所揭露的內容為限。而在本較佳實施例中的鈍化層6是以熱蒸鍍機(Thermal Evaporation Coater)以將氟化物設置於該光電轉換層4與所述電極5上作說明，當然也能以電子束蒸鍍法(Electron Beam Evaporation,EBE)或濺鍍法(Sputter)取代，不應以本較佳實施例所揭露的內容為限。The passivation layer 6 is made of a fluoride (Fluoride-Based) capable of penetrating the ultraviolet light 2 and is disposed on the photoelectric conversion layer 4 and the electrode 5. In particular, in the preferred embodiment, the fluoride of the passivation layer 6 is described by lithium fluoride (LiF). Of course, cesium fluoride (CsF), cesium fluoride (RbF), and fluorine can also be used. Magnesium (MgF 2 ), calcium fluoride (CaF 2 ), lanthanum fluoride (LaF 3 ), aluminum fluoride (AlF 3 ), or cesium fluoride (GdF 3 ) and other materials with similar functions should not be replaced by The content disclosed in the preferred embodiment is limited. The passivation layer 6 in the preferred embodiment is a thermal evaporation machine (Thermal Evaporation Coater) for disposing fluoride on the photoelectric conversion layer 4 and the electrode 5, and of course, it can also be steamed by electron beam. The plating method (Electron Beam Evaporation (EBE) or sputtering method (Sputter) should not be limited to the contents disclosed in the preferred embodiment.
在使用時，該紫外光線2是依序穿過該鈍化層6、所述電極5，並進入該光電轉換層4。該光電轉換層4吸收該紫外光線2進而發電輸出光電流(Photo Current)訊號，因此光電流再藉由所述電極5輸出於外界的一分析設備(圖未示)。In use, the ultraviolet light 2 sequentially passes through the passivation layer 6, the electrode 5, and enters the photoelectric conversion layer 4. The photoelectric conversion layer 4 absorbs the ultraviolet light 2 to generate a photo current (Photo Current) signal, so that the photocurrent is output to the outside by an analysis device (not shown).
特別說明的是，現有氟化物一般是用於特殊玻璃或鏡片上的塗層，並利用其良好的紫外光穿透率以作為光學上的應用。然而，一般研究人員顯然無法跳脫傳統思維，僵化地認為氟化物只適用於光學領域，而忽略氟化物與半導體材料作結合在電學上的優勢與發展潛力。In particular, existing fluorides are generally used for coatings on special glass or lenses and utilize their good UV transmittance for optical applications. However, the average researcher is clearly unable to escape the traditional thinking, rigidly believe that fluoride is only suitable for the field of optics, while ignoring the electrical advantages and development potential of fluoride combined with semiconductor materials.
特別說明的是，在本較佳實施例中是將該鈍化層6用於一金屬-半導體-金屬光檢測器(Metal-Semiconductor-Metal Photodetector,MSM PD)上做說明，當然該以氟化物製成的鈍化層6也可以如圖5所示應用於金屬-介電層-半導體光檢測器(Metal-Insulator-Semiconductor Photodetector,MIS PD)上或如圖6所示應用於蕭基接面二極體(Schottky Barrier Diode,SBD)上，不應以本較佳實施例所揭露的內容為限。另外，MIS PD、SBD的結構與MSM PD的不同之處為多了一層介電層7。In particular, in the preferred embodiment, the passivation layer 6 is used for a Metal-Semiconductor-Metal Photodetector (MSM PD), which is of course made of fluoride. The passivation layer 6 can also be applied to a Metal-Insulator-Semiconductor Photodetector (MIS PD) as shown in FIG. 5 or applied to a Schottky junction diode as shown in FIG. The Schottky Barrier Diode (SBD) should not be limited to the contents disclosed in the preferred embodiment. In addition, the structure of the MIS PD and the SBD differs from the MSM PD in that a dielectric layer 7 is added.
需特別說明的是，在圖6中，所述電極5的其中之一電極5是設置於該介電層7上，另一電極5則設置於該光電轉換層4上，而鈍化層6則是設置於該介電層7、光電轉換層4，以及所述電極5上。It should be particularly noted that, in FIG. 6, one of the electrodes 5 of the electrode 5 is disposed on the dielectric layer 7, and the other electrode 5 is disposed on the photoelectric conversion layer 4, and the passivation layer 6 is It is disposed on the dielectric layer 7, the photoelectric conversion layer 4, and the electrode 5.
綜上所述，本發明具有鈍化層的紫外光檢測器在不照 射紫外光時，能藉由該鈍化層6降低環境干擾所產生的雜訊。而在照射紫外光時，則能藉由該鈍化層6的高紫外光穿透率，使較多的紫外光到達該光電轉換層4並產生電訊號。因此，該鈍化層6不只能有效地降低雜訊，同時也能提升光電流強度，故確實能達成本發明之目的。In summary, the ultraviolet light detector of the present invention having a passivation layer is not illuminated. When the ultraviolet light is emitted, the noise generated by environmental interference can be reduced by the passivation layer 6. When the ultraviolet light is irradiated, more ultraviolet light reaches the photoelectric conversion layer 4 and generates an electric signal by the high ultraviolet light transmittance of the passivation layer 6. Therefore, the passivation layer 6 can not only effectively reduce noise, but also enhance the photocurrent intensity, so that the object of the present invention can be achieved.
惟以上所述者，僅為本發明之較佳實施例而已，當不能以此限定本發明實施之範圍，即大凡依本發明申請專利範圍及發明說明內容所作之簡單的等效變化與修飾，皆仍屬本發明專利涵蓋之範圍內。The above is only the preferred embodiment of the present invention, and the scope of the invention is not limited thereto, that is, the simple equivalent changes and modifications made by the scope of the invention and the description of the invention are All remain within the scope of the invention patent.
2‧‧‧紫外光線2‧‧‧UV light
3‧‧‧基板3‧‧‧Substrate
4‧‧‧光電轉換層4‧‧‧ photoelectric conversion layer
5‧‧‧電極5‧‧‧Electrode
51‧‧‧本體部51‧‧‧ Body Department
52‧‧‧指叉部52‧‧‧Finger
6‧‧‧鈍化層6‧‧‧ Passivation layer
7‧‧‧介電層7‧‧‧Dielectric layer
圖1是一結構示意圖，說明現有金屬-半導體-金屬光檢測器；圖2是一結構示意圖，說明現有具有鈍化層的光檢測器；圖3是一俯視圖，說明本發明具有鈍化層的紫外光檢測器的較佳實施例；圖4是一結構示意圖，輔助說明該較佳實施例，圖中省略部分結構並省略材質剖面線；圖5是一結構示意圖，說明該較佳實施例的鈍化層應用於金屬-介電層-半導體光檢測器上的實施態樣；以及圖6是一結構示意圖，說明該較佳實施例的鈍化層應用於蕭基接面二極體上的實施態樣。1 is a schematic structural view showing a conventional metal-semiconductor-metal photodetector; FIG. 2 is a schematic structural view showing a conventional photodetector having a passivation layer; and FIG. 3 is a plan view showing a UV light having a passivation layer of the present invention. A preferred embodiment of the detector; FIG. 4 is a schematic view of the preferred embodiment, which omits part of the structure and omits the material section line; FIG. 5 is a schematic structural view showing the passivation layer of the preferred embodiment. An embodiment applied to a metal-dielectric layer-semiconductor photodetector; and FIG. 6 is a schematic structural view showing an embodiment in which the passivation layer of the preferred embodiment is applied to a Schottky junction diode.
2‧‧‧紫外光線2‧‧‧UV light
3‧‧‧基板3‧‧‧Substrate
4‧‧‧光電轉換層4‧‧‧ photoelectric conversion layer
5‧‧‧電極5‧‧‧Electrode
6‧‧‧鈍化層6‧‧‧ Passivation layer
7‧‧‧介電層7‧‧‧Dielectric layer
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW99141424A TWI422052B (en) | 2010-11-30 | 2010-11-30 | Ultraviolet photodetector with passivation layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW99141424A TWI422052B (en) | 2010-11-30 | 2010-11-30 | Ultraviolet photodetector with passivation layer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201222857A TW201222857A (en) | 2012-06-01 |
| TWI422052B true TWI422052B (en) | 2014-01-01 |
Family
ID=46725343
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW99141424A TWI422052B (en) | 2010-11-30 | 2010-11-30 | Ultraviolet photodetector with passivation layer |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TWI422052B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114937707B (en) * | 2022-05-19 | 2024-08-20 | 苏州大学 | Electronic passivation contact structure and crystalline silicon solar cell |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1583156B1 (en) * | 2004-02-16 | 2008-11-19 | Kabushiki Kaisha Kobe Seiko Sho | Ultraviolet sensor and method for manufacturing the same |
-
2010
- 2010-11-30 TW TW99141424A patent/TWI422052B/en active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1583156B1 (en) * | 2004-02-16 | 2008-11-19 | Kabushiki Kaisha Kobe Seiko Sho | Ultraviolet sensor and method for manufacturing the same |
Non-Patent Citations (2)
| Title |
|---|
| H. C. Lee et al.,"AlInGaN Metal-Insulator-Semiconductor Photodetectors at UV-C 280 nm", Electrochemical and Solid-State Letters, Vol. 12, No. 10, pp. H357-H360, 2009. * |
| Ying Li et al.,"The Study of ZnO Photoconductive UV Detector", 8th International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2006, pp. 947 – 949. * |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201222857A (en) | 2012-06-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Chen et al. | Ultra-sensitive flexible Ga2O3 solar-blind photodetector array realized via ultra-thin absorbing medium | |
| Jabbar et al. | Gallium nitride–based photodiode: a review | |
| Su et al. | GaN and InGaN metal-semiconductor-metal photodetectors with different Schottky contact metals | |
| CN204130567U (en) | A kind of avalanche photodide for day blind ultraviolet detection | |
| US10861996B2 (en) | Near-infrared light sensors including 2-dimensional insulator | |
| CN106784122A (en) | Photodetector and preparation method based on graphene/boron-doped silicon quantum dot/silicon | |
| CN105742387B (en) | AlGaN graded component superlattice avalanche photodiodes | |
| CN105590971B (en) | AlGaN solar-blind ultraviolet enhanced avalanche photo-detector and preparation method therefor | |
| CN109980040A (en) | A kind of gallium oxide MIS structure ultraviolet detector | |
| Janardhanam et al. | High gain GaN ultraviolet Schottky photodetector with Al-doped ZnO interlayer | |
| Li et al. | High performance Schottky UV photodetectors based on epitaxial AlGaN thin film | |
| CN102651421B (en) | Spectrum selective photoelectric detector and preparation method thereof | |
| TWI422052B (en) | Ultraviolet photodetector with passivation layer | |
| Zhang et al. | Localized surface plasmon resonance enables Si-based near-infrared photodetector | |
| CN110676272A (en) | Semiconductor ultraviolet photoelectric detector | |
| CN1598502A (en) | Gallium nitrogen base visible / ultraviolet clouble-colour photoelectric detector | |
| CN110429144A (en) | A kind of plane near infrared photodetector based on tower nurse plasma | |
| TWI446563B (en) | Ultraviolet photodetector with dielectric layer | |
| US20130154040A1 (en) | Photo detectors | |
| CN112968073B (en) | Ultrasensitive flexible gallium oxide photodetector and array, preparation method and application | |
| CN109000792A (en) | A kind of photon number and the distinguishable superconductive microwave dynamic inductance detector of energy | |
| Hao et al. | Comparison of photoemission performance of AlGaN/GaN photocathodes with different GaN thickness | |
| CN114709279A (en) | Ultraviolet detector chip with inverted structure | |
| Wu et al. | A bipolar response deep ultraviolet photodetector for encryption and anti-interference communication based on an a-Sb 2 O 5/a-Ga 2 O 3 heterojunction | |
| TW200421634A (en) | Luminous-diode chip with radiation-transparent current-expansion layer |