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TWI419216B - Chemical-mechanical polishing slurry - Google Patents

Chemical-mechanical polishing slurry Download PDF

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Publication number
TWI419216B
TWI419216B TW97116754A TW97116754A TWI419216B TW I419216 B TWI419216 B TW I419216B TW 97116754 A TW97116754 A TW 97116754A TW 97116754 A TW97116754 A TW 97116754A TW I419216 B TWI419216 B TW I419216B
Authority
TW
Taiwan
Prior art keywords
mechanical polishing
chemical mechanical
polishing liquid
liquid according
acid
Prior art date
Application number
TW97116754A
Other languages
Chinese (zh)
Other versions
TW200947541A (en
Inventor
Jery Guodong Chen
Peter Weihong Song
Daisy Ying Yao
Bob Jianxin Bao
Shumin Wang
Original Assignee
Anji Microelectronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anji Microelectronics Co Ltd filed Critical Anji Microelectronics Co Ltd
Priority to TW97116754A priority Critical patent/TWI419216B/en
Publication of TW200947541A publication Critical patent/TW200947541A/en
Application granted granted Critical
Publication of TWI419216B publication Critical patent/TWI419216B/en

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  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Claims (10)

一種化學機械拋光液，包含水、摻雜金屬的二氧化矽及速率促進劑，該速率促進劑為下列群組中之一種或多種：有機酸、氟化物、氨水、季銨鹽及其衍生物。 A chemical mechanical polishing liquid comprising water, metal doped cerium oxide and a rate promoter, the rate promoter being one or more of the group consisting of organic acids, fluorides, ammonia, quaternary ammonium salts and derivatives thereof . 如申請專利範圍第1項所述之化學機械拋光液，其中該金屬為鋁、鋯、鈰、金、銀、鐵、鉻或鉬。 The chemical mechanical polishing liquid according to claim 1, wherein the metal is aluminum, zirconium, hafnium, gold, silver, iron, chromium or molybdenum. 如申請專利範圍第1項所述之化學機械拋光液，其中該摻雜金屬的二氧化矽之粒徑為20~80奈米。 The chemical mechanical polishing liquid according to claim 1, wherein the doped metal cerium oxide has a particle diameter of 20 to 80 nm. 如申請專利範圍第1項所述之化學機械拋光液，其中該摻雜金屬的二氧化矽之用量為質量百分比1~20%。 The chemical mechanical polishing liquid according to claim 1, wherein the doped metal cerium oxide is used in an amount of 1 to 20% by mass. 如申請專利範圍第4項所述之化學機械拋光液，其中該摻雜金屬的二氧化矽之用量為質量百分比3~10%。 The chemical mechanical polishing liquid according to claim 4, wherein the metal-doped cerium oxide is used in an amount of 3 to 10% by mass. 如申請專利範圍第1項所述之化學機械拋光液，其中該有機酸係選自草酸、2-膦酸丁烷-1,2,4-三羧酸、2-羥基膦醯基乙酸、氨基三亞甲基膦酸及酒石酸中的一種或多種，該氟化物係選自氟化氫、氟化銨、氟矽酸銨及氟硼酸銨中的一種或多種，該季銨鹽係選自四丁基氫氧化銨、四甲基氫氧化銨及四丁基氟硼酸銨中的一種或多種。 The chemical mechanical polishing liquid according to claim 1, wherein the organic acid is selected from the group consisting of oxalic acid, butane-1,2,4-tricarboxylic acid, 2-hydroxyphosphoninoacetic acid, and amino group. One or more of trimethylenephosphonic acid and tartaric acid, the fluoride being selected from one or more of hydrogen fluoride, ammonium fluoride, ammonium fluoroantimonate and ammonium fluoroborate, the quaternary ammonium salt being selected from the group consisting of tetrabutyl hydrogen One or more of ammonium oxide, tetramethylammonium hydroxide, and tetrabutylammonium fluoroborate. 如申請專利範圍第1項所述之化學機械拋光液，其中該速率促進劑的用量為質量百分比0.05~1%。 The chemical mechanical polishing liquid according to claim 1, wherein the rate promoter is used in an amount of 0.05 to 1% by mass. 如申請專利範圍第7項所述之化學機械拋光液，其中該速率促進劑的用量為質量百分比0.1~0.6%。 The chemical mechanical polishing liquid according to claim 7, wherein the rate promoter is used in an amount of 0.1 to 0.6% by mass. 如申請專利範圍第1項所述之化學機械拋光液，其中該化學機械拋光液的pH值為2~5。 The chemical mechanical polishing liquid according to claim 1, wherein the chemical mechanical polishing liquid has a pH of 2 to 5. 如申請專利範圍第1項所述之化學機械拋光液，進一步包含緩蝕劑、氧化劑、絡合劑及表面活性劑中的一種或多種。 The chemical mechanical polishing liquid according to claim 1, further comprising one or more of a corrosion inhibitor, an oxidizing agent, a complexing agent and a surfactant.
TW97116754A 2008-05-07 2008-05-07 Chemical-mechanical polishing slurry TWI419216B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW97116754A TWI419216B (en) 2008-05-07 2008-05-07 Chemical-mechanical polishing slurry

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW97116754A TWI419216B (en) 2008-05-07 2008-05-07 Chemical-mechanical polishing slurry

Publications (2)

Publication Number Publication Date
TW200947541A TW200947541A (en) 2009-11-16
TWI419216B true TWI419216B (en) 2013-12-11

Family

ID=44870363

Family Applications (1)

Application Number Title Priority Date Filing Date
TW97116754A TWI419216B (en) 2008-05-07 2008-05-07 Chemical-mechanical polishing slurry

Country Status (1)

Country Link
TW (1) TWI419216B (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101012356A (en) * 2006-01-31 2007-08-08 富士胶片株式会社 Polishing liquid for barrier layer
CN101077961A (en) * 2006-05-26 2007-11-28 安集微电子（上海）有限公司 Polishing fluid for smoothing treatment of refined surface and use method thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101012356A (en) * 2006-01-31 2007-08-08 富士胶片株式会社 Polishing liquid for barrier layer
CN101077961A (en) * 2006-05-26 2007-11-28 安集微电子（上海）有限公司 Polishing fluid for smoothing treatment of refined surface and use method thereof

Also Published As

Publication number Publication date
TW200947541A (en) 2009-11-16

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