TWI412142B - A photoelectrode with metal-based light reflective layer and dye-sensitized solar cell structure of using the same - Google Patents
A photoelectrode with metal-based light reflective layer and dye-sensitized solar cell structure of using the same Download PDFInfo
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- TWI412142B TWI412142B TW99109476A TW99109476A TWI412142B TW I412142 B TWI412142 B TW I412142B TW 99109476 A TW99109476 A TW 99109476A TW 99109476 A TW99109476 A TW 99109476A TW I412142 B TWI412142 B TW I412142B
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- metal
- photoelectrode
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- dye
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 41
- 239000002184 metal Substances 0.000 title claims abstract description 41
- 239000004065 semiconductor Substances 0.000 claims abstract description 43
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 239000002923 metal particle Substances 0.000 claims description 21
- 239000008151 electrolyte solution Substances 0.000 claims description 9
- 239000002905 metal composite material Substances 0.000 claims description 9
- 239000002245 particle Substances 0.000 claims description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 239000000975 dye Substances 0.000 description 13
- 239000002105 nanoparticle Substances 0.000 description 13
- 239000000463 material Substances 0.000 description 8
- 229910044991 metal oxide Inorganic materials 0.000 description 6
- 150000004706 metal oxides Chemical class 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910006404 SnO 2 Inorganic materials 0.000 description 4
- 229910010413 TiO 2 Inorganic materials 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000008033 biological extinction Effects 0.000 description 2
- 230000003197 catalytic effect Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000005281 excited state Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000005283 ground state Effects 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 239000002772 conduction electron Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000011244 liquid electrolyte Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
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- Hybrid Cells (AREA)
Abstract
Description
本發明係有關於一種電極及其電池結構，特別係有關於一種具金屬反光層之光電極及其染料敏化太陽能電池結構。The present invention relates to an electrode and a battery structure thereof, and more particularly to a photoelectrode having a metal reflective layer and a dye-sensitized solar cell structure.
如第1圖所示，習知染料敏化太陽能電池之光電極係由一透明基板S、一透明導電層C及一吸附染料(Dye)之多孔性半導體層P所構成，該多孔性半導體層P大都由二氧化鈦(TiO2 )奈米粒子所組成。當太陽光照射於光電極時，染料會吸收太陽光，同時染料分子內的電子獲得足夠能量從基態躍遷到高能階的激發態(Dye*)，染料分子中處於高能階激發態的電子不穩定，故不穩定的電子易被緊鄰的TiO2 奈米粒子所吸引，而選擇注入到TiO2 奈米粒子的導帶內，獲得額外電子的TiO2 奈米粒子則形成n-型半導體，而失去電子的染料則轉為帶正電的離子而形成氧化態，此外，失去電子的染料會從液態電解質中補充電子，以使染料恢復電荷平衡而回到基態，而進入TiO2 奈米粒子導帶的傳導電子則匯集於該透明導電層C，並透過外部迴路傳遞到對電極，其所產生流通的電流稱之為光電流。然而，習知光電極之該多孔性半導體層P的厚度只有數微米，其具有某種程度的透光性，因此，當太陽光照射於光電極時，會有一部分的光被染料吸收，而另有一部分光會穿透該多孔性半導體層P而無法被使用。As shown in FIG. 1, the photoelectrode of a conventional dye-sensitized solar cell is composed of a transparent substrate S, a transparent conductive layer C, and a porous semiconductor layer P of a dye (Dye), the porous semiconductor layer. Most of P consists of titanium dioxide (TiO 2 ) nanoparticles. When sunlight is applied to the photoelectrode, the dye absorbs sunlight, and the electrons in the dye molecule gain sufficient energy to transition from the ground state to the excited state of the high energy level (Dye*), and the electrons in the dye molecule are excited by the high energy level excited state. , so that electrons easily unstable immediately TiO 2 nanoparticles are attracted and injected into the conduction band selection TiO 2 nanoparticles, the additional electrons TiO 2 nanoparticles n- type semiconductor is formed, and loss of The dye of the electron is converted into a positively charged ion to form an oxidation state. In addition, the dye that loses electrons will replenish electrons from the liquid electrolyte, so that the dye restores the charge balance and returns to the ground state, and enters the conduction band of the TiO 2 nanoparticle. The conduction electrons are collected in the transparent conductive layer C and transmitted to the counter electrode through an external circuit, and the current generated by the current is called a photocurrent. However, the thickness of the porous semiconductor layer P of the conventional photoelectrode is only a few micrometers, and it has a certain degree of light transmittance. Therefore, when sunlight is irradiated to the photoelectrode, a part of the light is absorbed by the dye, and A part of the light penetrates the porous semiconductor layer P and cannot be used.
本發明之主要目的係在於提供一種具金屬反光層之光電極及其染料敏化太陽能電池結構，該光電極係包含一透明基板、一透明導電層、一多孔性半導體層以及一金屬反光層，該透明基板係具有一表面，該透明導電層係形成於該透明基板之該表面，該多孔性半導體層係形成於該透明導電層上，而該金屬反光層係覆蓋該多孔性半導體層。該染料敏化太陽能電池結構係包含一光電極、一對電極以及一電解質溶液，該光電極係包含一透明基板、一透明導電層、一多孔性半導體層以及一金屬反光層，該透明基板係具有一表面，該透明導電層係形成於該透明基板之該表面，該多孔性半導體層係形成於該透明導電層上，而該金屬反光層係覆蓋該多孔性半導體層，該對電極係與該光電極呈相對設置，該電解質溶液係設置於該光電極與該對電極之間，本發明係利用該金屬反光層將穿透該多孔性半導體層之光反射回該多孔性半導體層，以使染料再吸收反射光，其功效上可提昇光電極之光吸收效率及提高染料敏化太陽能電池之光電轉換效率。The main object of the present invention is to provide a photoelectrode having a metal reflective layer and a dye-sensitized solar cell structure, the photoelectrode comprising a transparent substrate, a transparent conductive layer, a porous semiconductor layer and a metal reflective layer The transparent substrate has a surface, the transparent conductive layer is formed on the surface of the transparent substrate, the porous semiconductor layer is formed on the transparent conductive layer, and the metal reflective layer covers the porous semiconductor layer. The dye-sensitized solar cell structure comprises a photoelectrode, a pair of electrodes and an electrolyte solution, the photoelectrode comprising a transparent substrate, a transparent conductive layer, a porous semiconductor layer and a metal reflective layer, the transparent substrate And having a surface, the transparent conductive layer is formed on the surface of the transparent substrate, the porous semiconductor layer is formed on the transparent conductive layer, and the metal reflective layer covers the porous semiconductor layer, the pair of electrode systems Opposite the photoelectrode, the electrolyte solution is disposed between the photoelectrode and the counter electrode, and the present invention uses the metal reflective layer to reflect light that penetrates the porous semiconductor layer back to the porous semiconductor layer. In order to re-absorb the reflected light, the efficacy of the dye can improve the light absorption efficiency of the photoelectrode and improve the photoelectric conversion efficiency of the dye-sensitized solar cell.
請參閱第2圖，其係本發明之一較佳實施例，一種光電極10係包含有一透明基板11、一透明導電層12、一多孔性半導體層13以及一金屬反光層14，在本實施例中，該透明基板11係可為玻璃基板或可撓式基板，且該透明基板11係具有一表面11a，該透明導電層12係形成於該透明基板11之該表面11a，而該透明導電層12之材質係可選自於由SnO2
:F (FTO)、In2
O3
:Sn (ITO)、ZnO:Al (AZO)、SnO2
:Sb (ATO)及ZnO:Ga (GZO)所構成之群組中的其中一種，該多孔性半導體層13係形成於該透明導電層12上，且該多孔性半導體層13係包含有複數個吸附染料之金屬氧化物半導體奈米粒子13a，在本實施例中，該些金屬氧化物半導體奈米粒子13a係為二氧化鈦(TiO2
)奈米粒子，且較佳地，該多孔性半導體層13之厚度係介於1微米至20微米之間，以防止電子在該多孔性半導體層13中的擴散和復合阻抗過大而影響電池效能。
請再參閱第2圖，該金屬反光層14係覆蓋該多孔性半導體層13，在本實施例中，該金屬反光層14係包含有複數個金屬複合粒子M，各該金屬複合粒子M係由一金屬微粒M0及一包覆該金屬微粒M0之透明絕緣層M1所構成，在本實施例中，該些金屬微粒M0係為高反射率之金屬，其材質係可選自於由鋁、銅、鎳、鈦、金、銀及其合金所構成之群組中的其中一種，此外，該些金屬微粒M0之幾何形狀係可為圓球形或薄片形，較佳地，該些金屬微粒M0係為薄片形，因其具有較佳之光遮蔽性，該些透明絕緣層M1主要用以保護該些金屬微粒M0免於受到電解質溶液之腐蝕及防止該些金屬微粒M0與該多孔性半導體層13產生電性導通而造成電池失效，因此，該些透明絕緣層M1之材質須具備高透明度、低消光係數、高絕緣性及耐化學性佳等特點，在本實施例中，該些透明絕緣層M1之材質係可選用二氧化矽(SiO2
)，且為避免影響透光性，該些透明絕緣層M1之厚度須控制在介於1奈米至100奈米之間。又，在本實施例中，為避免因使用該金屬反光層14而導致電池內阻增加，該金屬反光層14之厚度亦須控制得當，較佳地，該金屬反光層14之厚度係介於1微米至15微米之間。
請參閱第3圖，其係本發明之一種染料敏化太陽能電池結構係包含有一光電極10、一對電極20以及一電解質溶液30，該光電極10係包含有一透明基板11、一透明導電層12、一多孔性半導體層13以及一金屬反光層14，在本實施例中，該透明基板11係可為玻璃基板或可撓式基板，且該透明基板11係具有一表面11a，該透明導電層12係形成於該透明基板11之該表面11a，而該透明導電層12之材質係可選自於由SnO2
:F (FTO)、In2
O3
:Sn (ITO)、ZnO:Al (AZO)、SnO2
:Sb (ATO)及ZnO:Ga (GZO)所構成之群組中的其中一種，該多孔性半導體層13係形成於該透明導電層12上，且該多孔性半導體層13係包含有複數個吸附染料之金屬氧化物半導體奈米粒子13a，在本實施例中，該些金屬氧化物半導體奈米粒子13a係為二氧化鈦(TiO2
)奈米粒子。請再參閱第3圖，該金屬反光層14係覆蓋該多孔性半導體層13，在本實施例中，該金屬反光層14係包含有複數個金屬複合粒子M，各該金屬複合粒子M係由一金屬微粒M0及一包覆該金屬微粒M0之透明絕緣層M1所構成，在本實施例中，該些金屬微粒M0係為高反射率之金屬，其材質係可選自於由鋁、銅、鎳、鈦、金、銀及其合金所構成之群組中的其中一種，此外，該些金屬微粒M0之幾何形狀係可為圓球形或薄片形，較佳地，該些金屬微粒M0係為薄片形，因其具有較佳之光遮蔽性，該些透明絕緣層M1主要用以保護該些金屬微粒M0免於受到電解質溶液之腐蝕及防止該些金屬微粒M0與該多孔性半導體層13產生電性導通而造成電池失效，因此，該些透明絕緣層M1之材質須具備高透明度、低消光係數、高絕緣性及耐化學性佳等特點，在本實施例中，該些透明絕緣層M1之材質係可選用二氧化矽(SiO2
)，且為避免影響透光性，該些透明絕緣層M1之厚度須控制在介於1奈米至100奈米之間。又，在本實施例中，為避免因使用該金屬反光層14而導致電池內阻增加，該金屬反光層14之厚度亦須控制得當，較佳地，該金屬反光層14之厚度係介於1微米至15微米之間。
請再參閱第3圖，該對電極20係與該光電極10呈相對設置，且該對電極20係具有一朝向該光電極10之導電表面20a及一形成於該導電表面20a之催化層21，在本實施例中，其係可利用一密封間隔材40接合該對電極20與該光電極10，而該電解質溶液30係設置於該光電極10與該對電極20之間，其中該密封間隔材40係可防止該電解質溶液30發生洩漏。本發明係利用該金屬反光層14將穿透該多孔性半導體層13之光反射回該多孔性半導體層13，以使染料再吸收反射光，其功效上可提昇光電極之光吸收效率及提高染料敏化太陽能電池之光電轉換效率。
本發明之保護範圍當視後附之申請專利範圍所界定者為準，任何熟知此項技藝者，在不脫離本發明之精神和範圍內所作之任何變化與修改，均屬於本發明之保護範圍。Referring to FIG. 2, a photoelectrode 10 includes a transparent substrate 11, a transparent conductive layer 12, a porous semiconductor layer 13, and a metal reflective layer 14 in a preferred embodiment of the present invention. In an embodiment, the transparent substrate 11 can be a glass substrate or a flexible substrate, and the transparent substrate 11 has a surface 11a formed on the surface 11a of the transparent substrate 11 and the transparent substrate is transparent. The material of the conductive layer 12 may be selected from SnO 2 :F (FTO), In 2 O 3 :Sn (ITO), ZnO:Al (AZO), SnO 2 :Sb (ATO), and ZnO:Ga (GZO). One of the group of the porous semiconductor layer 13 is formed on the transparent conductive layer 12, and the porous semiconductor layer 13 is composed of a plurality of metal oxide semiconductor nanoparticles 13a adsorbing dye. In the present embodiment, the metal oxide semiconductor nanoparticles 13a are titanium dioxide (TiO 2 ) nanoparticles, and preferably, the thickness of the porous semiconductor layer 13 is between 1 micrometer and 20 micrometers. To prevent the diffusion of electrons in the porous semiconductor layer 13 and the excessive complex impedance Pool performance.
Referring to FIG. 2 again, the metal reflective layer 14 covers the porous semiconductor layer 13. In the embodiment, the metal reflective layer 14 includes a plurality of metal composite particles M, each of which is composed of a metal particle M0 and a transparent insulating layer M1 covering the metal particle M0. In the embodiment, the metal particles M0 are high reflectivity metals, and the material thereof may be selected from aluminum and copper. And one of the group consisting of nickel, titanium, gold, silver and alloys thereof. Further, the geometric shapes of the metal particles M0 may be spherical or flaky, and preferably, the metal particles M0 are The transparent insulating layer M1 is mainly used to protect the metal particles M0 from corrosion by the electrolyte solution and prevent the metal particles M0 from being generated by the porous semiconductor layer 13 because of its good light shielding property. The battery is ineffective due to electrical conduction. Therefore, the materials of the transparent insulating layer M1 are required to have high transparency, low extinction coefficient, high insulation and chemical resistance. In this embodiment, the transparent insulating layer M1 Material is available Silicon dioxide with a (SiO 2), and to avoid affecting translucent, the plurality of the transparent insulating layer M1 be controlled thickness of between 1 to 100 nm. Moreover, in the embodiment, in order to avoid an increase in internal resistance of the battery due to the use of the metal reflective layer 14, the thickness of the metal reflective layer 14 must be properly controlled. Preferably, the thickness of the metal reflective layer 14 is between Between 1 micron and 15 microns.
Referring to FIG. 3, a dye-sensitized solar cell structure of the present invention comprises a photoelectrode 10, a pair of electrodes 20, and an electrolyte solution 30. The photoelectrode 10 includes a transparent substrate 11 and a transparent conductive layer. 12, a porous semiconductor layer 13 and a metal reflective layer 14, in this embodiment, the transparent substrate 11 can be a glass substrate or a flexible substrate, and the transparent substrate 11 has a surface 11a, the transparent The conductive layer 12 is formed on the surface 11a of the transparent substrate 11, and the material of the transparent conductive layer 12 is selected from SnO 2 :F (FTO), In 2 O 3 :Sn (ITO), ZnO:Al. One of a group consisting of (AZO), SnO 2 :Sb (ATO), and ZnO:Ga (GZO), the porous semiconductor layer 13 is formed on the transparent conductive layer 12, and the porous semiconductor layer The 13 series includes metal oxide semiconductor nanoparticles 13a having a plurality of adsorption dyes. In the present embodiment, the metal oxide semiconductor nanoparticles 13a are titanium dioxide (TiO 2 ) nanoparticles. Referring to FIG. 3 again, the metal reflective layer 14 covers the porous semiconductor layer 13. In the embodiment, the metal reflective layer 14 includes a plurality of metal composite particles M, and each of the metal composite particles M is composed of a metal particle M0 and a transparent insulating layer M1 covering the metal particle M0. In the embodiment, the metal particles M0 are high reflectivity metals, and the material thereof may be selected from aluminum and copper. And one of the group consisting of nickel, titanium, gold, silver and alloys thereof. Further, the geometric shapes of the metal particles M0 may be spherical or flaky, and preferably, the metal particles M0 are The transparent insulating layer M1 is mainly used to protect the metal particles M0 from corrosion by the electrolyte solution and prevent the metal particles M0 from being generated by the porous semiconductor layer 13 because of its good light shielding property. The battery is ineffective due to electrical conduction. Therefore, the materials of the transparent insulating layer M1 are required to have high transparency, low extinction coefficient, high insulation and chemical resistance. In this embodiment, the transparent insulating layer M1 Material is available With silicon dioxide (SiO 2), and to avoid affecting the light transmission, the plurality of transparent insulating layers M1 to be controlled thickness of between 1 to 100 nm. Moreover, in the embodiment, in order to avoid an increase in internal resistance of the battery due to the use of the metal reflective layer 14, the thickness of the metal reflective layer 14 must be properly controlled. Preferably, the thickness of the metal reflective layer 14 is between Between 1 micron and 15 microns.
Referring to FIG. 3 again, the pair of electrodes 20 are disposed opposite to the photoelectrode 10, and the pair of electrodes 20 has a conductive surface 20a facing the photoelectrode 10 and a catalytic layer 21 formed on the conductive surface 20a. In this embodiment, the pair of electrodes 20 and the photoelectrode 10 are bonded by a sealing spacer 40, and the electrolyte solution 30 is disposed between the photoelectrode 10 and the pair of electrodes 20, wherein the sealing The spacer 40 prevents leakage of the electrolyte solution 30. In the present invention, the light reflecting through the porous semiconductor layer 13 is reflected back to the porous semiconductor layer 13 by the metal reflective layer 14 to re-absorb the reflected light, which can improve the light absorption efficiency and the efficiency of the photoelectrode. Photoelectric conversion efficiency of dye-sensitized solar cells.
The scope of the present invention is defined by the scope of the appended claims, and any changes and modifications made by those skilled in the art without departing from the spirit and scope of the invention are within the scope of the present invention. .
10‧‧‧光電極
11‧‧‧透明基板
11a‧‧‧表面
12‧‧‧透明導電層
13‧‧‧多孔性半導體層
13a‧‧‧金屬氧化物半導體奈米粒子
14‧‧‧金屬反光層
20‧‧‧對電極
20a‧‧‧導電表面
21‧‧‧催化層
30‧‧‧電解質溶液
40‧‧‧密封間隔材
C‧‧‧透明導電層
M‧‧‧金屬複合粒子
M0‧‧‧金屬微粒
M1‧‧‧透明絕緣層
P‧‧‧多孔性半導體層
S‧‧‧透明基板10‧‧‧Photoelectrode
11‧‧‧Transparent substrate
11a‧‧‧ surface
12‧‧‧Transparent conductive layer
13‧‧‧Porous semiconductor layer
13a‧‧‧Metal Oxide Semiconductor Nanoparticles
14‧‧‧Metal reflective layer
20‧‧‧ opposite electrode
20a‧‧‧Electrical surface
21‧‧‧ Catalytic layer
30‧‧‧Electrolyte solution
40‧‧‧ Sealed partition
C‧‧‧Transparent conductive layer
M‧‧‧ metal composite particles
M0‧‧‧ metal particles
M1‧‧‧Transparent insulation
P‧‧‧Porous semiconductor layer
S‧‧‧Transparent substrate
第1圖：習知染料敏化太陽能電池之光電極結構示意圖。
第2圖：依據本發明之一較佳實施例，一種具金屬反光層之光電極結構圖。
第3圖：依據本發明之一較佳實施例，一種染料敏化太陽能電池結構圖。Fig. 1 is a schematic view showing the structure of a photoelectrode of a conventional dye-sensitized solar cell.
2 is a structural view of a photoelectrode having a metal reflective layer in accordance with a preferred embodiment of the present invention.
Figure 3 is a structural view of a dye-sensitized solar cell in accordance with a preferred embodiment of the present invention.
10‧‧‧光電極 10‧‧‧Photoelectrode
11‧‧‧透明基板 11‧‧‧Transparent substrate
11a‧‧‧表面 11a‧‧‧ surface
12‧‧‧透明導電層 12‧‧‧Transparent conductive layer
13‧‧‧多孔性半導體層 13‧‧‧Porous semiconductor layer
13a‧‧‧金屬氧化物半導體奈米粒子 13a‧‧‧Metal Oxide Semiconductor Nanoparticles
14‧‧‧金屬反光層 14‧‧‧Metal reflective layer
M‧‧‧金屬複合粒子 M‧‧‧ metal composite particles
M0‧‧‧金屬微粒 M0‧‧‧ metal particles
M1‧‧‧透明絕緣層 M1‧‧‧Transparent insulation
Claims (10)
一透明基板，其係具有一表面；
一透明導電層，其係形成於該透明基板之該表面；
一多孔性半導體層，其係形成於該透明導電層上；以及
一金屬反光層，其係覆蓋該多孔性半導體層。A photoelectrode having a metal reflective layer, comprising:
a transparent substrate having a surface;
a transparent conductive layer formed on the surface of the transparent substrate;
A porous semiconductor layer formed on the transparent conductive layer; and a metal reflective layer covering the porous semiconductor layer.
一光電極，其包含：
一透明基板，其係具有一表面；
一透明導電層，其係形成於該透明基板之該表面；
一多孔性半導體層，其係形成於該透明導電層上；以及
一金屬反光層，其係覆蓋該多孔性半導體；
一對電極，其係與該光電極呈相對設置；以及
一電解質溶液，其係設置於該光電極與該對電極之間。A dye-sensitized solar cell structure comprising:
a photoelectrode comprising:
a transparent substrate having a surface;
a transparent conductive layer formed on the surface of the transparent substrate;
a porous semiconductor layer formed on the transparent conductive layer; and a metal reflective layer covering the porous semiconductor;
a pair of electrodes disposed opposite to the photoelectrode; and an electrolyte solution disposed between the photoelectrode and the pair of electrodes.
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| US20050166959A1 (en) * | 2004-02-03 | 2005-08-04 | Wha-Sup Lee | Dye-sensitized solar cell and method of manufacturing the same |
| US20050260786A1 (en) * | 2002-08-13 | 2005-11-24 | Bridgestone Corporation | Dye-sensitized solar cell |
| TW200828607A (en) * | 2006-12-11 | 2008-07-01 | Fujikura Ltd | Photoelectric conversion element |
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| TW200945604A (en) * | 2008-02-06 | 2009-11-01 | Fujikura Ltd | Dye-sensitized solar cell |
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| US20050260786A1 (en) * | 2002-08-13 | 2005-11-24 | Bridgestone Corporation | Dye-sensitized solar cell |
| US20050166959A1 (en) * | 2004-02-03 | 2005-08-04 | Wha-Sup Lee | Dye-sensitized solar cell and method of manufacturing the same |
| US20090217979A1 (en) * | 2006-02-02 | 2009-09-03 | Sony Corporation | Dye Sensitization Photoelectric Converter |
| TW200828607A (en) * | 2006-12-11 | 2008-07-01 | Fujikura Ltd | Photoelectric conversion element |
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