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TWI411225B - Error amplifier and led circuit comprising the same - Google Patents

Error amplifier and led circuit comprising the same Download PDF

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Publication number
TWI411225B
TWI411225B TW99117247A TW99117247A TWI411225B TW I411225 B TWI411225 B TW I411225B TW 99117247 A TW99117247 A TW 99117247A TW 99117247 A TW99117247 A TW 99117247A TW I411225 B TWI411225 B TW I411225B
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mos transistor
type mos
gate
error amplifier
output
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TW99117247A
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Chinese (zh)
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TW201143277A (en
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Aungaung Yinn
Chowpeng Lee
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Himax Analogic Inc
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Abstract

An error amplifier and a LED circuit comprising the same are provided. The LED circuit comprises an inductor, a group of LEDs and a power MOS connected to the inductor, an error amplifier and a pulse width modulator controlling the gate of the power MOS according to an error amplifier output. The error amplifier comprises a differential input stage, an output stage having a first NMOS, a first PMOS, a second NMOS, a second PMOS and a control switch module. During a first operation mode, the control switch module connects the first NMOS and PMOS and connects the second NMOS and PMOS, and during a second operation mode, control switch module disables the second NMOS and PMOS.

Description

發光二極體電路及其誤差放大器Light-emitting diode circuit and its error amplifier

本揭示內容是有關於一種放大器,且特別是有關於一種誤差放大器以及包含此誤差放大器之發光二極體電路。The present disclosure relates to an amplifier, and more particularly to an error amplifier and a light emitting diode circuit including the same.

發光二極體(light emitting diode;LED)與傳統的燈泡照明工具相較下,估計效率約為傳統燈泡的四倍。並且,發光二極體並沒有傳統的燈泡含有有毒的水銀,更擁有較燈泡更長的使用壽命。種種因素下,發光二極體已經成為現代照明科技最新的主流技術。Compared to traditional light bulb lighting tools, light emitting diodes (LEDs) are estimated to be four times more efficient than conventional light bulbs. Moreover, the light-emitting diode does not have a conventional light bulb containing toxic mercury, and has a longer service life than the light bulb. Under various factors, the light-emitting diode has become the latest mainstream technology of modern lighting technology.

為使發光二極體電路之電壓穩定,常藉由電感的設置以達到目的。當發光二極體電路開始運作時,需要的是快速的反應時間,以迅速進入工作模式,而快速的反應時間將使發光二極體電路可在短時間內產生相當大的電流。然而,具有快速反應時間的發光二極體電路所產生的突波電流,容易使上述的電感無法承受而造成損壞。因此,如果發光二極體電路對反應時間不具有可以彈性調整的機制,則電感將持續在工作模式下遭受突波電流的衝擊,而容易損壞,無法正常的提供穩壓效果。In order to stabilize the voltage of the LED circuit, the setting of the inductor is often used to achieve the purpose. When the LED circuit starts to operate, a fast reaction time is required to quickly enter the operating mode, and a fast reaction time will cause the LED circuit to generate a relatively large current in a short time. However, the surge current generated by the light-emitting diode circuit having a fast response time is liable to cause the above-mentioned inductance to be unbearable and cause damage. Therefore, if the LED circuit does not have a mechanism for elastic adjustment of the reaction time, the inductor will continue to be subjected to the surge current in the operation mode, and is easily damaged, and the voltage regulation effect cannot be normally provided.

因此,如何設計一個新的發光二極體電路及其誤差放大器,以提供彈性調整的反應時間,乃為此一業界亟待解決的問題。Therefore, how to design a new LED circuit and its error amplifier to provide flexible adjustment of the reaction time is an urgent problem to be solved in the industry.

因此,本揭示內容之一態樣是在提供一種誤差放大器(error amplifier),包含:差動輸入級、輸出級以及控制開關模組。差動輸入級包含差動輸出。輸出級包含:第一N型金氧半電晶體(NMOS)、第一P型金氧半電晶體(PMOS)、第二N型金氧半電晶體以及第二P型金氧半電晶體。第一N型金氧半電晶體包含汲極以及閘極,其中汲極連接至誤差放大器輸出端以及閘極連接至差動輸出端。第一P型金氧半電晶體包含閘極以及汲極,其中閘極連接至閘極控制器,汲極連接至第一N型金氧半電晶體之汲極。第二P型金氧半電晶體包含汲極,其中汲極連接至第二N型金氧半電晶體之汲極。其中於第一操作模式中,控制開關模組使第二P型金氧半電晶體之閘極連接至閘極控制器,使第二N型金氧半電晶體之閘極連接至差動輸出端以及使第二P型金氧半電晶體之汲極連接至誤差放大器輸出端。於第二操作模式中,控制開關模組使第二P型金氧半電晶體以及第二N型金氧半電晶體,不與閘極控制器、差動輸出端以及誤差放大器輸出端連接。Accordingly, one aspect of the present disclosure is to provide an error amplifier comprising: a differential input stage, an output stage, and a control switch module. The differential input stage contains a differential output. The output stage includes: a first N-type MOS transistor (NMOS), a first P-type MOS transistor (PMOS), a second N-type MOS transistor, and a second P-type MOS transistor. The first N-type MOS transistor includes a drain and a gate, wherein the drain is connected to the error amplifier output and the gate is connected to the differential output. The first P-type MOS transistor includes a gate and a drain, wherein the gate is connected to the gate controller and the drain is connected to the drain of the first N-type MOS transistor. The second P-type MOS transistor includes a drain, wherein the drain is connected to the drain of the second N-type MOS transistor. In the first mode of operation, the control switch module connects the gate of the second P-type MOS transistor to the gate controller, and connects the gate of the second N-type MOS transistor to the differential output And connecting the drain of the second P-type MOS transistor to the error amplifier output. In the second mode of operation, the control switch module is such that the second P-type MOS transistor and the second N-type MOS transistor are not connected to the gate controller, the differential output, and the error amplifier output.

依據本揭示內容一實施例,於第一操作模式中,控制開關模組使輸出級之轉導值提升。於第二操作模式中,控制開關模組使輸出級之轉導值降低。According to an embodiment of the present disclosure, in the first operation mode, the control switch module increases the transduction value of the output stage. In the second mode of operation, the control switch module reduces the transduction value of the output stage.

依據本揭示內容另一實施例,其中控制開關模組包含:第一開關、第二開關以及第三開關。第一開關連接於第二P型金氧半電晶體之汲極與誤差放大器輸出端之間。第二開關連接於第二P型金氧半電晶體之閘極與閘極控制器之間。第三開關連接於第二N型金氧半電晶體之閘極與差動輸出端之間。According to another embodiment of the present disclosure, the control switch module includes: a first switch, a second switch, and a third switch. The first switch is connected between the drain of the second P-type MOS transistor and the output of the error amplifier. The second switch is connected between the gate of the second P-type MOS transistor and the gate controller. The third switch is connected between the gate of the second N-type MOS transistor and the differential output terminal.

依據本揭示內容又一實施例,其中差動輸入級更包含第一輸入端以及第二輸入端,第一輸入端用以接收參考電壓,第二輸入端用以接收變動電壓,其中差動輸出端根據參考電壓以及變動電壓產生差動輸出電壓。According to still another embodiment of the present disclosure, the differential input stage further includes a first input end for receiving a reference voltage, and a second input end for receiving a variable voltage, wherein the differential output is The terminal generates a differential output voltage according to the reference voltage and the varying voltage.

依據本揭示內容再一實施例,其中閘極控制器為電流源。According to still another embodiment of the present disclosure, the gate controller is a current source.

本揭示內容之另一態樣是在提供一種發光二極體(light emitting diode;LED)電路,包含:電感、發光二極體群組、功率金氧半電晶體、誤差放大器以及波寬調變器。電感用以連接供應電壓以及第一端。發光二極體群組連接於第一端。功率金氧半電晶體連接於第一端。誤差放大器包含:差動輸入級、輸出級以及控制開關模組。差動輸入級包含差動輸出。輸出級包含:第一N型金氧半電晶體、第一P型金氧半電晶體、第二N型金氧半電晶體以及第二P型金氧半電晶體。第一N型金氧半電晶體包含汲極以及閘極,其中汲極連接至誤差放大器輸出端以及閘極連接至差動輸出端。第一P型金氧半電晶體包含閘極以及汲極,其中閘極連接至閘極控制器,汲極連接至第一N型金氧半電晶體之汲極。第二P型金氧半電晶體包含汲極,其中汲極連接至第二N型金氧半電晶體之汲極。其中於第一操作模式中,控制開關模組使第二P型金氧半電晶體之閘極連接至閘極控制器,使第二N型金氧半電晶體之閘極連接至差動輸出端以及使第二P型金氧半電晶體之汲極連接至誤差放大器輸出端。於第二操作模式中,控制開關模組使第二P型金氧半電晶體以及第二N型金氧半電晶體,不與閘極控制器、差動輸出端以及誤差放大器輸出端連接。波寬調變器用以根據誤差放大器輸出端產生開關訊號,以控制功率金氧半電晶體,俾對發光二極體群組進行充電或放電。Another aspect of the present disclosure is to provide a light emitting diode (LED) circuit including: an inductor, a light emitting diode group, a power MOS transistor, an error amplifier, and a wave width modulation Device. The inductor is used to connect the supply voltage with the first end. A group of light emitting diodes is coupled to the first end. A power MOS transistor is coupled to the first end. The error amplifier includes: a differential input stage, an output stage, and a control switch module. The differential input stage contains a differential output. The output stage comprises: a first N-type MOS transistor, a first P-type MOS transistor, a second N-type MOS transistor, and a second P-type MOS transistor. The first N-type MOS transistor includes a drain and a gate, wherein the drain is connected to the error amplifier output and the gate is connected to the differential output. The first P-type MOS transistor includes a gate and a drain, wherein the gate is connected to the gate controller and the drain is connected to the drain of the first N-type MOS transistor. The second P-type MOS transistor includes a drain, wherein the drain is connected to the drain of the second N-type MOS transistor. In the first mode of operation, the control switch module connects the gate of the second P-type MOS transistor to the gate controller, and connects the gate of the second N-type MOS transistor to the differential output And connecting the drain of the second P-type MOS transistor to the error amplifier output. In the second mode of operation, the control switch module is such that the second P-type MOS transistor and the second N-type MOS transistor are not connected to the gate controller, the differential output, and the error amplifier output. The wave width modulator is configured to generate a switching signal according to the output of the error amplifier to control the power MOS transistor, and to charge or discharge the LED group.

依據本揭示內容一實施例,於第一操作模式中,控制開關模組使輸出級之轉導值提升。於第二操作模式中,控制開關模組使輸出級之轉導值降低。According to an embodiment of the present disclosure, in the first operation mode, the control switch module increases the transduction value of the output stage. In the second mode of operation, the control switch module reduces the transduction value of the output stage.

依據本揭示內容另一實施例,其中控制開關模組包含:第一開關、第二開關以及第三開關。第一開關連接於第二P型金氧半電晶體之汲極與誤差放大器輸出端之間。第二開關連接於第二P型金氧半電晶體之閘極與閘極控制器之間。第三開關連接於第二N型金氧半電晶體之閘極與差動輸出端之間。According to another embodiment of the present disclosure, the control switch module includes: a first switch, a second switch, and a third switch. The first switch is connected between the drain of the second P-type MOS transistor and the output of the error amplifier. The second switch is connected between the gate of the second P-type MOS transistor and the gate controller. The third switch is connected between the gate of the second N-type MOS transistor and the differential output terminal.

依據本揭示內容又一實施例,其中差動輸入級更包含第一輸入端以及第二輸入端,第一輸入端用以接收參考電壓,第二輸入端用以接收變動電壓,其中差動輸出端根據參考電壓以及變動電壓產生差動輸出電壓。變動電壓為來自發光二極體群組所輸出之迴授電壓。According to still another embodiment of the present disclosure, the differential input stage further includes a first input end for receiving a reference voltage, and a second input end for receiving a variable voltage, wherein the differential output is The terminal generates a differential output voltage according to the reference voltage and the varying voltage. The varying voltage is the feedback voltage output from the group of light emitting diodes.

依據本揭示內容再一實施例,當發光二極體電路開始運作時,控制開關模組操作於第一操作模式中,以提升輸出級之轉導值,當發光二極體電路開始運作後,參考電壓以及變動電壓間之差距小於臨界值時,控制開關模組操作於第二操作模式中,以降低輸出級之轉導值。According to still another embodiment of the present disclosure, when the LED circuit starts to operate, the control switch module operates in the first operation mode to increase the transduction value of the output stage, when the LED circuit starts to operate, When the difference between the reference voltage and the varying voltage is less than the threshold, the control switch module operates in the second mode of operation to reduce the transduction value of the output stage.

依據本揭示內容更具有之一實施例,於發光二極體電路運作中,當參考電壓以及變動電壓間之差距大於臨界值時,控制開關模組操作於第一操作模式中,以提升輸出級之轉導值,當參考電壓以及變動電壓間之差距小於臨界值時,控制開關模組操作於第二操作模式中,以降低輸出級之轉導值。According to another embodiment of the present disclosure, in the operation of the LED circuit, when the difference between the reference voltage and the variation voltage is greater than a threshold, the control switch module operates in the first operation mode to enhance the output stage. The transduction value, when the difference between the reference voltage and the fluctuating voltage is less than the critical value, the control switch module operates in the second operation mode to reduce the transduction value of the output stage.

依據本揭示內容再具有之一實施例,當發光二極體電路開始運作時,控制開關模組操作於第一操作模式中,以提升輸出級之轉導值,當發光二極體電路開始運作超過一特定時間後,控制開關模組操作於第二操作模式中,以降低輸出級之轉導值。According to another embodiment of the present disclosure, when the LED circuit starts to operate, the control switch module operates in the first operation mode to increase the transduction value of the output stage, when the LED circuit starts to operate. After a certain period of time, the control switch module operates in the second mode of operation to reduce the transduction value of the output stage.

依據本揭示內容一實施例,其中波寬調變器更自振盪器接收振盪電壓,波寬調變器實質上是根據誤差放大器輸出端以及振盪電壓產生開關訊號。其中振盪電壓為鋸齒狀波形電壓。閘極控制器為電流源。According to an embodiment of the present disclosure, wherein the bandwidth modulator receives the oscillating voltage from the oscillator, the bandwidth modulator substantially generates the switching signal according to the output of the error amplifier and the oscillating voltage. The oscillating voltage is a sawtooth waveform voltage. The gate controller is a current source.

應用本揭示內容之優點在於藉由控制開關模組,可視需要於不同模式間改變誤差放大器的組態,進而改變其轉導值,而輕易地達到上述之目的。The advantage of applying the disclosure is that the above-mentioned purpose can be easily achieved by controlling the switch module, and changing the configuration of the error amplifier between different modes as needed, thereby changing the transduction value.

請參照第1圖。第1圖為本揭示內容之一實施例中,發光二極體電路1之示意圖。發光二極體電路1包含:電感10、發光二極體群組12、功率金氧半電晶體14、誤差放大器16以及波寬調變器18。Please refer to Figure 1. FIG. 1 is a schematic diagram of a light-emitting diode circuit 1 in an embodiment of the present disclosure. The LED circuit 1 includes an inductor 10, a light emitting diode group 12, a power MOS transistor 14, an error amplifier 16, and a wave width modulator 18.

電感10用以連接供應電壓Vp以及第一端11,並提供一個穩壓的機制。發光二極體群組12連接於第一端11以及接地電位之間。於本實施例中,發光二極體群組12與接地電位間實質上尚連接有負載120。功率金氧半電晶體14連接於第一端11及接地電位之間。The inductor 10 is used to connect the supply voltage Vp with the first terminal 11 and provide a voltage stabilizing mechanism. The light emitting diode group 12 is connected between the first end 11 and the ground potential. In the present embodiment, the load 120 is substantially connected between the LED group 12 and the ground potential. The power MOS transistor 14 is connected between the first terminal 11 and the ground potential.

誤差放大器16用以接收參考電壓Vref以及迴授電壓Vf。於本實施例中,迴授電壓Vf如第1圖所示,是來自發光二極體群組12的輸出端。於其他實施例中,迴授電壓Vf可以來自其他與發光二極體群組12相關的電壓。迴授電壓Vf是一個變動電壓,而其變動的值是與發光二極體電路1的運作情形相關。誤差放大器16在誤差放大器輸出端產生誤差放大器輸出電壓Ve。波寬調變器18則自誤差放大器輸出端接收誤差放大器輸出電壓Ve。The error amplifier 16 is configured to receive the reference voltage Vref and the feedback voltage Vf. In the present embodiment, the feedback voltage Vf is an output from the LED group 12 as shown in FIG. In other embodiments, the feedback voltage Vf may be derived from other voltages associated with the LED group 12. The feedback voltage Vf is a varying voltage, and the value of the variation is related to the operation of the LED circuit 1. Error amplifier 16 produces an error amplifier output voltage Ve at the error amplifier output. The bandwidth modulator 18 receives the error amplifier output voltage Ve from the error amplifier output.

於本實施例中,發光二極體電路1更包含振盪器180。振盪器180產生鋸齒狀波型的振盪電壓Vo。波寬調變器18同時接收誤差放大器輸出電壓Ve以及振盪電壓Vo,並據以產生具有活動週期(active period)以及關閉週期(inactive period)的開關訊號。開關訊號進一步傳送到功率金氧半電晶體14的閘極,以控制功率金氧半電晶體14的開關,進一步對發光二極體群組12進行充電或是放電。In the embodiment, the LED circuit 1 further includes an oscillator 180. The oscillator 180 generates an oscillating voltage Vo of a sawtooth waveform. The bandwidth modulator 18 simultaneously receives the error amplifier output voltage Ve and the oscillating voltage Vo, and accordingly generates a switching signal having an active period and an inactive period. The switching signal is further transmitted to the gate of the power MOS transistor 14 to control the switching of the power MOS transistor 14, further charging or discharging the LED group 12.

於一實施例中,振盪電壓Vo維持相同之波形。因此,誤差放大器輸出電壓Ve的大小將決定開關訊號的活動週期以及關閉週期的長短。當開關訊號使功率金氧半電晶體14啟動充電的機制時,發光二極體群組12將導通並發光。相反地,當開關訊號使功率金氧半電晶體14啟動放電的機制時,則發光二極體群組12將關閉。因此,誤差放大器輸出電壓Ve將決定充電及放電的行為,並決定第一端11的電流量。In one embodiment, the oscillating voltage Vo maintains the same waveform. Therefore, the magnitude of the error amplifier output voltage Ve will determine the active period of the switching signal and the length of the off period. When the switching signal causes the power MOS transistor 14 to initiate charging, the LED group 12 will turn on and illuminate. Conversely, when the switching signal causes the power MOS transistor 14 to initiate a discharge mechanism, the LED group 12 will be turned off. Therefore, the error amplifier output voltage Ve will determine the behavior of charging and discharging and determine the amount of current at the first terminal 11.

當發光二極體電路1開始運作時,需要的是快速的反應時間,以使發光二極體電路1迅速進入工作模式。藉由提高誤差放大器輸出電壓Ve的升降改變率,將可以達到快速反應時間的效果。而快速的反應時間將使發光二極體電路1可在短時間內產生相當大的電流。然而,具有快速反應時間的發光二極體電路1所產生的突波電流,容易使電感10無法承受而造成損壞。因此,如果發光二極體電路1的誤差放大器16對反應時間不具有可以彈性調整的機制,並使誤差放大器輸出電壓Ve持續維持較高的升降改變率,則電感10將持續在工作模式下遭受突波電流,而容易損壞,無法正常的提供穩壓效果。When the light-emitting diode circuit 1 starts to operate, a fast reaction time is required to allow the light-emitting diode circuit 1 to quickly enter the operating mode. By increasing the rate of change of the error amplifier output voltage Ve, a fast reaction time can be achieved. The fast reaction time will cause the LED circuit 1 to generate a relatively large current in a short time. However, the surge current generated by the light-emitting diode circuit 1 having a fast response time is liable to cause the inductance 10 to be unbearable and cause damage. Therefore, if the error amplifier 16 of the light-emitting diode circuit 1 does not have a mechanism for elastic adjustment of the reaction time, and the error amplifier output voltage Ve continues to maintain a high rate of change in the rise and fall, the inductor 10 will continue to suffer in the operating mode. The surge current is easily damaged and cannot provide normal voltage regulation.

請參照第2圖。第2圖為本揭示內容之一實施例中,誤差放大器16更詳細之示意圖。誤差放大器16包含:差動輸入級20、輸出級22以及控制開關模組。Please refer to Figure 2. Figure 2 is a more detailed schematic diagram of the error amplifier 16 in one embodiment of the present disclosure. The error amplifier 16 includes a differential input stage 20, an output stage 22, and a control switch module.

差動輸入級20包含第一輸入端、第二輸入端以及差動輸出端。第一輸入端用以接收參考電壓Vref,第二輸入端用以接收迴授電壓Vf。差動輸出端根據參考電壓Vref以及變動電壓Vf產生差動輸出電壓Vdi。於本實施例中,參考電壓Vref為固定不變的值,而迴授電壓Vf為變動的值,且此變動的值是根據第1圖中的發光二極體群組12的工作狀態而決定。The differential input stage 20 includes a first input, a second input, and a differential output. The first input terminal is for receiving the reference voltage Vref, and the second input terminal is for receiving the feedback voltage Vf. The differential output terminal generates a differential output voltage Vdi according to the reference voltage Vref and the varying voltage Vf. In this embodiment, the reference voltage Vref is a fixed value, and the feedback voltage Vf is a variable value, and the value of the variation is determined according to the operating state of the LED group 12 in FIG. .

輸出級22包含:第一N型金氧半電晶體220、第一P型金氧半電晶體222、第二N型金氧半電晶體224以及第二P型金氧半電晶體226。第一N型金氧半電晶體220包含汲極以及閘極,其中汲極連接至產生誤差放大器輸出電壓Ve的誤差放大器輸出端,閘極則連接至產生差動輸出電壓Vdi的差動輸出端。於本實施例中,第一N型金氧半電晶體220的源極連接至接地電位。第一P型金氧半電晶體222包含閘極以及汲極,其中閘極連接至閘極控制器24,汲極連接至第一N型金氧半電晶體220之汲極。閘極控制器24於本實施例中為電流源,於其他實施例中則可為用以控制第一P型金氧半電晶體222的控制電壓。本實施例中,第一P型金氧半電晶體222的源極連接至供應電壓Vp。第二P型金氧半電晶體226之汲極連接至第二N型金氧半電晶體224的汲極。於本實施例中,第二P型金氧半電晶體226之源極連接至供應電壓Vp,第二N型金氧半電晶體224的源極則連接至接地電位。The output stage 22 includes a first N-type MOS transistor 220, a first P-type MOS transistor 222, a second N-type MOS transistor 224, and a second P-type MOS transistor 226. The first N-type MOS transistor 220 includes a drain and a gate, wherein the drain is connected to an error amplifier output that produces an error amplifier output voltage Ve, and the gate is connected to a differential output that produces a differential output voltage Vdi. . In the present embodiment, the source of the first N-type MOS transistor 220 is connected to the ground potential. The first P-type MOS transistor 222 includes a gate and a drain, wherein the gate is coupled to the gate controller 24 and the drain is coupled to the drain of the first N-type MOS transistor 220. The gate controller 24 is a current source in this embodiment, and may be a control voltage for controlling the first P-type MOS transistor 222 in other embodiments. In this embodiment, the source of the first P-type MOS transistor 222 is connected to the supply voltage Vp. The drain of the second P-type MOS transistor 226 is connected to the drain of the second N-type MOS transistor 224. In the present embodiment, the source of the second P-type MOS transistor 226 is connected to the supply voltage Vp, and the source of the second N-type MOS transistor 224 is connected to the ground potential.

於本實施例中,控制開關模組包含:第一開關260、第二開關262以及第三開關264。第一開關260連接於第二P型金氧半電晶體226之汲極與誤差放大器輸出端之間。第二開關262連接於第二P型金氧半電晶體226之閘極與閘極控制器24之間。第三開關264連接於第二N型金氧半電晶體224之閘極與差動輸出端之間。In this embodiment, the control switch module includes: a first switch 260, a second switch 262, and a third switch 264. The first switch 260 is coupled between the drain of the second P-type MOS transistor 226 and the output of the error amplifier. The second switch 262 is connected between the gate of the second P-type MOS transistor 226 and the gate controller 24. The third switch 264 is connected between the gate of the second N-type MOS transistor 224 and the differential output terminal.

於本實施例中,一個具有第一狀態及第二狀態的控制電壓(未繪示)被用以控制第一開關260、第二開關262以及第三開關264的運作。請同時參照第3A圖以及第3B圖。第3A圖以及第3B圖繪示本揭示內容之一實施例中,在不同操作模式下,誤差放大器16的示意圖。In this embodiment, a control voltage (not shown) having a first state and a second state is used to control the operations of the first switch 260, the second switch 262, and the third switch 264. Please refer to both Figure 3A and Figure 3B. 3A and 3B are schematic diagrams of the error amplifier 16 in different modes of operation in an embodiment of the present disclosure.

於第一操作模式中,控制電壓位於第一狀態,以使第一開關260、第二開關262以及第三開關264成關閉狀態,進一步使第二P型金氧半電晶體226之閘極透過第二開關262連接至閘極控制器24,使第二N型金氧半電晶體224之閘極透過第三開關264連接至差動輸出端,以及使第二P型金氧半電晶體226之汲極透過第一開關260連接至誤差放大器輸出端。第3A圖繪示在第一操作模式下,誤差放大器16的等效電路圖。由第3A圖可知,在第一操作模式下,第一P型金氧半電晶體222及第二P型金氧半電晶體226並聯,而第一N型金氧半電晶體220及第二N型金氧半電晶體224並聯。In the first mode of operation, the control voltage is in the first state, so that the first switch 260, the second switch 262, and the third switch 264 are turned off, and the gate of the second P-type MOS transistor 226 is further transmitted. The second switch 262 is connected to the gate controller 24 such that the gate of the second N-type MOS transistor 224 is connected to the differential output terminal through the third switch 264, and the second P-type MOS transistor 226 The drain is connected to the error amplifier output through a first switch 260. FIG. 3A is an equivalent circuit diagram of the error amplifier 16 in the first mode of operation. As can be seen from FIG. 3A, in the first mode of operation, the first P-type MOS transistor 222 and the second P-type MOS transistor 226 are connected in parallel, and the first N-type MOS transistor 220 and the second N-type gold oxide semi-transistors 224 are connected in parallel.

於第二操作模式中,控制電壓位於第二狀態,以使第一開關260、第二開關262以及第三開關264成打開狀態,進一步使第二P型金氧半電晶體226以及第二N型金氧半電晶體224,不與閘極控制器24、差動輸出端以及誤差放大器輸出端連接。第3B圖繪示在第二操作模式下,誤差放大器16的等效電路圖。由第3B圖可知,在第二操作模式下,僅有第一P型金氧半電晶體222及第一N型金氧半電晶體220仍在工作。In the second mode of operation, the control voltage is in the second state to cause the first switch 260, the second switch 262, and the third switch 264 to be in an open state, further to cause the second P-type MOS transistor 226 and the second N The MOS transistor 224 is not coupled to the gate controller 24, the differential output, and the error amplifier output. FIG. 3B is an equivalent circuit diagram of the error amplifier 16 in the second mode of operation. As can be seen from Fig. 3B, in the second mode of operation, only the first P-type MOS transistor 222 and the first N-type MOS transistor 220 are still operating.

因此,在由第二操作模式轉換至第一操作模式後,誤差放大器16的輸出級22的轉導值將獲得提升,而可使反應時間快速,亦即誤差放大器輸出電壓Ve可以快速的改變。而相反的,在由第一操作模式轉換至第二操作模式後,誤差放大器16的輸出級22的轉導值將降低,反應時間亦將隨之變慢。Therefore, after switching from the second mode of operation to the first mode of operation, the transducing value of the output stage 22 of the error amplifier 16 will be boosted, and the reaction time can be made fast, that is, the error amplifier output voltage Ve can be rapidly changed. Conversely, after switching from the first mode of operation to the second mode of operation, the transducing value of the output stage 22 of the error amplifier 16 will decrease and the reaction time will also slow down.

於一實施例中,當發光二極體電路1開始運作時,控制開關模組操作於第一操作模式中,以提升輸出級22之轉導值,並使誤差放大器16具有快速的反應時間,進一步使發光二極體電路1的輸出電壓或電流可以快速增加,即可迅速地從電路的初始狀態切換至工作模式中。當發光二極體電路1開始運作超過一特定時間後,誤差放大器16已經穩定運作於工作模式中,則控制開關模組將操作於第二操作模式中,以降低輸出級22之轉導值,而使第一端11的電壓或電流不再具有快速的升降而影響電感10的運作。In an embodiment, when the LED circuit 1 starts to operate, the control switch module operates in the first operation mode to increase the transconductance value of the output stage 22, and the error amplifier 16 has a fast response time. Further, the output voltage or current of the light-emitting diode circuit 1 can be rapidly increased, and the initial state of the circuit can be quickly switched to the operating mode. After the LED circuit 1 starts to operate for more than a certain time, the error amplifier 16 has been stably operated in the operation mode, and the control switch module will operate in the second operation mode to reduce the transduction value of the output stage 22, The voltage or current of the first terminal 11 no longer has a rapid rise and fall affecting the operation of the inductor 10.

於另一實施例中,當發光二極體電路1開始運作時,控制開關模組操作於第一操作模式中,以如前所述,提升輸出級22之轉導值。接著,一個對參考電壓Vref以及迴授電壓Vf的偵測機制將啟動,以在當參考電壓Vref以及迴授電壓Vf的間之差距小於一臨界值時,判斷發光二極體電路1已經穩定運作於工作模式中。因此,控制開關模組將操作於第二操作模式中,以降低輸出級22之轉導值。In another embodiment, when the LED circuit 1 begins to operate, the control switch module operates in the first mode of operation to boost the transduction value of the output stage 22 as previously described. Then, a detection mechanism for the reference voltage Vref and the feedback voltage Vf is activated to determine that the LED circuit 1 has been stably operated when the difference between the reference voltage Vref and the feedback voltage Vf is less than a threshold value. In the working mode. Therefore, the control switch module will operate in the second mode of operation to reduce the transduction value of the output stage 22.

在本揭示內中又另一實施例中,於發光二極體電路1運作中,上述的偵測機制可以持續地進行。當參考電壓Vref以及迴授電壓Vf間之差距大於臨界值時,表示發光二極體電路1處於不穩定的狀態下。舉例來說,如果迴授電壓Vf對正常的工作狀態來說太大或是太小,則控制開關模組將操作於第一操作模式中,以提升輸出級22之轉導值,迅速地降低或提升第一端11的電壓或電流。而當參考電壓以及變動電壓間之差距小於臨界值時,則判斷發光二極體電路1已經穩定運作於工作模式中。因此,控制開關模組操作於第二操作模式中,以降低輸出級22之轉導值。In still another embodiment of the present disclosure, in the operation of the LED circuit 1, the above detection mechanism can be continuously performed. When the difference between the reference voltage Vref and the feedback voltage Vf is larger than the critical value, it indicates that the light-emitting diode circuit 1 is in an unstable state. For example, if the feedback voltage Vf is too large or too small for a normal operating state, the control switch module will operate in the first mode of operation to increase the transduction value of the output stage 22 and rapidly decrease Or boost the voltage or current of the first terminal 11. When the difference between the reference voltage and the varying voltage is less than the critical value, it is judged that the light-emitting diode circuit 1 has been stably operated in the operating mode. Therefore, the control switch module operates in the second mode of operation to reduce the transduction value of the output stage 22.

需注意的是,誤差放大器16之輸出電壓的上升或下降是由參考電壓Vref及迴授電壓Vf的大小決定。舉例來說,於一實施例中,當迴授電壓Vf大於參考電壓Vref,則誤差放大器16使輸出電壓降低,而當迴授電壓Vf小於參考電壓Vref,則誤差放大器16使輸出電壓升高。而另一方面,發光二極體電路的電壓電流上升與下降率亦可由參考電壓Vref及迴授電壓Vf的大小決定,亦即,由改變輸出級22的轉導值進行改變。It should be noted that the rise or fall of the output voltage of the error amplifier 16 is determined by the magnitude of the reference voltage Vref and the feedback voltage Vf. For example, in one embodiment, when the feedback voltage Vf is greater than the reference voltage Vref, the error amplifier 16 lowers the output voltage, and when the feedback voltage Vf is less than the reference voltage Vref, the error amplifier 16 raises the output voltage. On the other hand, the voltage current rise and fall rate of the LED circuit can also be determined by the magnitude of the reference voltage Vref and the feedback voltage Vf, that is, by changing the transconductance value of the output stage 22.

因此,本揭示內容中之發光二極體電路及其所包含之誤差放大器,提供可彈性調整反應時間的機制。藉由改變誤差放大器中輸出級的轉導值,誤差放大器的輸出電壓的上升及下降率可隨不同的情形切換至適當的數值。因此,提供至發光二極體群組的電流或電壓亦可隨之進行調整。而發光二極體電路中提供穩壓的電感也可因此免於受到損壞。Therefore, the light-emitting diode circuit and the error amplifier included therein provide a mechanism for elastically adjusting the reaction time. By changing the transconductance value of the output stage in the error amplifier, the rise and fall rates of the output voltage of the error amplifier can be switched to appropriate values depending on the situation. Therefore, the current or voltage supplied to the group of light-emitting diodes can also be adjusted accordingly. Inductive inductors in the LED circuit can also be protected from damage.

雖然本揭示內容已以實施方式揭露如上,然其並非用以限定本揭示內容,任何熟習此技藝者,在不脫離本揭示內容之精神和範圍內,當可作各種之更動與潤飾,因此本揭示內容之保護範圍當視後附之申請專利範圍所界定者為準。The present disclosure has been disclosed in the above embodiments, but it is not intended to limit the disclosure, and any person skilled in the art can make various changes and refinements without departing from the spirit and scope of the disclosure. The scope of protection of the disclosure is subject to the definition of the scope of the patent application.

1...發光二極體電路1. . . Light-emitting diode circuit

10...電感10. . . inductance

11...第一端11. . . First end

12...發光二極體群組12. . . Illuminating diode group

120...負載120. . . load

14...功率金氧半電晶體14. . . Power MOS semi-transistor

16...誤差放大器16. . . Error amplifier

18...波寬調變器18. . . Wave width modulator

180...振盪器180. . . Oscillator

20...差動輸入級20. . . Differential input stage

22...輸出級twenty two. . . Output stage

220...第一N型金氧半電晶體220. . . First N-type gold oxide semi-transistor

222...第一P型金氧半電晶體222. . . First P-type gold oxide semi-transistor

224...第二N型金氧半電晶體224. . . Second N-type gold oxide semi-transistor

226...第二P型金氧半電晶體226. . . Second P-type gold oxide semi-transistor

24...閘極控制器twenty four. . . Gate controller

260...第一開關260. . . First switch

262...第二開關262. . . Second switch

264...第三開關264. . . Third switch

為讓本揭示內容之上述和其他目的、特徵、優點與實施例能更明顯易懂,所附圖式之說明如下:The above and other objects, features, advantages and embodiments of the present disclosure will become more apparent and understood.

第1圖為本揭示內容之一實施例中,發光二極體電路之示意圖;1 is a schematic diagram of a light emitting diode circuit in an embodiment of the present disclosure;

第2圖為本揭示內容之一實施例中,誤差放大器更詳細之示意圖;以及2 is a more detailed schematic diagram of an error amplifier in an embodiment of the present disclosure;

第3A圖以及第3B圖繪示本揭示內容之一實施例中,在不同操作模式下,誤差放大器的示意圖。3A and 3B are schematic diagrams of an error amplifier in different modes of operation in an embodiment of the present disclosure.

16...誤差放大器16. . . Error amplifier

20...差動輸入級20. . . Differential input stage

22...輸出級twenty two. . . Output stage

220...第一N型金氧半電晶體220. . . First N-type gold oxide semi-transistor

222...第一P型金氧半電晶體222. . . First P-type gold oxide semi-transistor

224...第二N型金氧半電晶體224. . . Second N-type gold oxide semi-transistor

226...第二P型金氧半電晶體226. . . Second P-type gold oxide semi-transistor

24...閘極控制器twenty four. . . Gate controller

260...第一開關260. . . First switch

262...第二開關262. . . Second switch

264...第三開關264. . . Third switch

Claims (18)

一種誤差放大器(error amplifier),包含:一差動輸入級,包含一差動輸出端;一輸出級,包含:一第一N型金氧半電晶體(NMOS),包含一汲極以及一閘極,其中該汲極連接至一誤差放大器輸出端以及該閘極連接至該差動輸出端;一第一P型金氧半電晶體(PMOS),包含一閘極以及一汲極,其中該閘極連接至一閘極控制器,該汲極連接至該第一N型金氧半電晶體之汲極;一第二N型金氧半電晶體;以及一第二P型金氧半電晶體,包含一汲極,其中該汲極連接至該第二N型金氧半電晶體之汲極;以及一控制開關模組;其中於一第一操作模式中,該控制開關模組使該第二P型金氧半電晶體之該閘極連接至該閘極控制器,使該第二N型金氧半電晶體之該閘極連接至該差動輸出端以及使該第二P型金氧半電晶體之該汲極連接至該誤差放大器輸出端;於一第二操作模式中,該控制開關模組使該第二P型金氧半電晶體以及該第二N型金氧半電晶體,不與該閘極控制器、該差動輸出端以及該誤差放大器輸出端連接。 An error amplifier includes: a differential input stage including a differential output; and an output stage comprising: a first N-type MOS transistor, comprising a drain and a gate a pole connected to an error amplifier output and the gate connected to the differential output; a first P-type MOS transistor comprising a gate and a drain, wherein The gate is connected to a gate controller, the drain is connected to the drain of the first N-type MOS transistor; a second N-type MOS transistor; and a second P-type MOS a crystal comprising a drain, wherein the drain is connected to the drain of the second N-type MOS transistor; and a control switch module; wherein in a first mode of operation, the control switch module causes the The gate of the second P-type MOS transistor is connected to the gate controller such that the gate of the second N-type MOS transistor is connected to the differential output terminal and the second P-type is The drain of the MOS transistor is coupled to the output of the error amplifier; in a second mode of operation, the control is turned on The second module P-type metal-oxide-semiconductor transistor and the second N-type metal-oxide-semiconductor transistor, does not, of the differential output terminal and the output terminal of the error amplifier is connected to the gate controller. 如請求項1所述之誤差放大器,其中於該第一操 作模式中,該控制開關模組使該第二P型金氧半電晶體之閘極連接至該閘極控制器,使該第二N型金氧半電晶體之閘極連接至該差動輸出端以及使該第二P型金氧半電晶體之汲極連接至該誤差放大器輸出端,俾提升該輸出級之轉導值(transconductance)。 The error amplifier of claim 1, wherein the first operation In the mode, the control switch module connects the gate of the second P-type MOS transistor to the gate controller, and connects the gate of the second N-type MOS transistor to the differential The output terminal and the drain of the second P-type MOS transistor are connected to the error amplifier output, and the transconductance of the output stage is boosted. 如請求項1所述之誤差放大器,其中於該第二操作模式中,該控制開關模組使該第二P型金氧半電晶體以及該第二N型金氧半電晶體,不與該閘極控制器、該差動輸出端以及該誤差放大器輸出端連接,俾降低該輸出級之轉導值。 The error amplifier of claim 1, wherein in the second mode of operation, the control switch module causes the second P-type MOS transistor and the second N-type MOS transistor to The gate controller, the differential output, and the error amplifier output are connected to reduce the transduction value of the output stage. 如請求項1所述之誤差放大器,其中該控制開關模組包含:一第一開關,連接於該第二P型金氧半電晶體之汲極與該誤差放大器輸出端之間;一第二開關,連接於該第二P型金氧半電晶體之閘極與該閘極控制器之間;以及一第三開關,連接於該第二N型金氧半電晶體之閘極與該差動輸出端之間。 The error amplifier of claim 1, wherein the control switch module comprises: a first switch connected between the drain of the second P-type MOS transistor and the output of the error amplifier; a switch connected between the gate of the second P-type MOS transistor and the gate controller; and a third switch connected to the gate of the second N-type MOS transistor and the difference Between the output terminals. 如請求項1所述之誤差放大器,其中該差動輸入級更包含一第一輸入端以及一第二輸入端,該第一輸入端用以接收一參考電壓,該第二輸入端用以接收一變動電壓,其中該差動輸出端根據該參考電壓以及該變動電壓產 生一差動輸出電壓。 The error amplifier of claim 1, wherein the differential input stage further comprises a first input end and a second input end, the first input end is for receiving a reference voltage, and the second input end is for receiving a varying voltage, wherein the differential output is based on the reference voltage and the varying voltage A differential output voltage is generated. 如請求項1所述之誤差放大器,其中該閘極控制器為一電流源。 The error amplifier of claim 1, wherein the gate controller is a current source. 一種發光二極體(light emitting diode;LED)電路,包含:一電感,用以連接一供應電壓以及一第一端;一發光二極體群組,連接於該第一端;一功率金氧半電晶體,連接於該第一端;一誤差放大器,包含:一差動輸入級,包含一差動輸出端;一輸出級,包含:一第一N型金氧半電晶體,包含一汲極以及一閘極,其中該汲極連接至一誤差放大器輸出端以及該閘極連接至該差動輸出端;一第一P型金氧半電晶體,包含一閘極以及一汲極,其中該閘極連接至一閘極控制器,該汲極連接至該第一N型金氧半電晶體之汲極;一第二N型金氧半電晶體;一第二P型金氧半電晶體,包含一汲極,其中該汲極連接至該第二N型金氧半電晶體之汲極;以及一控制開關模組,其中於一第一操作模式中,該 控制開關模組使該第二P型金氧半電晶體之閘極連接至該閘極控制器,使該第二N型金氧半電晶體之閘極連接至該差動輸出端以及使該第二P型金氧半電晶體之汲極連接至該誤差放大器輸出端;於一第二操作模式中,該控制開關模組使該第二P型金氧半電晶體以及該第二N型金氧半電晶體,不與該閘極控制器、該差動輸出端以及該誤差放大器輸出端連接;以及一波寬調變器(pulse width modulator;PWM),用以根據該誤差放大器輸出端產生一開關訊號,以控制該功率金氧半電晶體,俾對該發光二極體群組進行充電或放電。 A light emitting diode (LED) circuit includes: an inductor for connecting a supply voltage and a first end; a group of light emitting diodes connected to the first end; a power metal oxygen a semi-transistor connected to the first end; an error amplifier comprising: a differential input stage comprising a differential output; and an output stage comprising: a first N-type MOS transistor comprising a 汲And a gate, wherein the drain is connected to an error amplifier output terminal and the gate is connected to the differential output terminal; a first P-type MOS transistor includes a gate and a drain, wherein The gate is connected to a gate controller, the drain is connected to the drain of the first N-type MOS transistor; a second N-type MOS transistor; and a second P-type MOS transistor a crystal comprising a drain, wherein the drain is connected to the drain of the second N-type MOS transistor; and a control switch module, wherein in a first mode of operation, the Controlling the switch module to connect the gate of the second P-type MOS transistor to the gate controller, connecting the gate of the second N-type MOS transistor to the differential output terminal and a drain of the second P-type MOS transistor is coupled to the error amplifier output; in a second mode of operation, the control switch module causes the second P-type MOS transistor and the second N-type a gold-oxygen semiconductor, not connected to the gate controller, the differential output, and the error amplifier output; and a pulse width modulator (PWM) for outputting the error amplifier A switching signal is generated to control the power MOS transistor, and the LED group is charged or discharged. 如請求項7所述之發光二極體電路,其中於該第一操作模式中,該控制開關模組使該第二P型金氧半電晶體之閘極連接至該閘極控制器,使該第二N型金氧半電晶體之閘極連接至該差動輸出端以及使該第二P型金氧半電晶體之汲極連接至該誤差放大器輸出端,俾提升該輸出級之轉導值。 The illuminating diode circuit of claim 7, wherein in the first mode of operation, the control switch module connects the gate of the second P-type MOS transistor to the gate controller, a gate of the second N-type MOS transistor is connected to the differential output terminal, and a drain of the second P-type MOS transistor is connected to the output of the error amplifier, and the turn of the output stage is raised Guide value. 如請求項7所述之發光二極體電路,其中於該第二操作模式中,該控制開關模組使該第二P型金氧半電晶體以及該第二N型金氧半電晶體,不與該閘極控制器、該差動輸出端以及該誤差放大器輸出端連接,俾降低該輸出級之轉導值。 The illuminating diode circuit of claim 7, wherein in the second mode of operation, the control switch module causes the second P-type MOS transistor and the second N-type MOS transistor, Not connected to the gate controller, the differential output, and the error amplifier output, and the transduction value of the output stage is reduced. 如請求項7所述之發光二極體電路,其中該控制 開關模組包含:一第一開關,連接於該第二P型金氧半電晶體之汲極與該誤差放大器輸出端之間;一第二開關,連接於該第二P型金氧半電晶體之閘極與該閘極控制器之間;以及一第三開關,連接於該第二N型金氧半電晶體之閘極與該差動輸出端之間。 The light emitting diode circuit of claim 7, wherein the control The switch module includes: a first switch connected between the drain of the second P-type MOS transistor and the output terminal of the error amplifier; and a second switch connected to the second P-type MOS a gate of the crystal and the gate controller; and a third switch connected between the gate of the second N-type MOS transistor and the differential output. 如請求項7所述之發光二極體電路,其中該差動輸入級更包含一第一輸入端以及一第二輸入端,該第一輸入端用以接收一參考電壓,該第二輸入端用以接收一變動電壓,其中該差動輸出端根據該參考電壓以及該變動電壓產生一差動輸出電壓。 The illuminating diode circuit of claim 7, wherein the differential input stage further comprises a first input end and a second input end, wherein the first input end is configured to receive a reference voltage, the second input end And receiving a variable voltage, wherein the differential output generates a differential output voltage according to the reference voltage and the variable voltage. 如請求項11所述之發光二極體電路,其中該變動電壓為來自該發光二極體群組所輸出之一迴授電壓。 The illuminating diode circuit of claim 11, wherein the varying voltage is a feedback voltage outputted from the group of illuminating diodes. 如請求項11所述之發光二極體電路,其中當該發光二極體電路開始運作時,該控制開關模組操作於該第一操作模式中,以提升該輸出級之轉導值,當該發光二極體電路開始運作後,該參考電壓以及該變動電壓間之一差距小於一臨界值時,該控制開關模組操作於該第二操作模式中,以降低該輸出級之轉導值。 The illuminating diode circuit of claim 11, wherein when the illuminating diode circuit starts to operate, the control switch module operates in the first operating mode to increase the transducing value of the output stage. After the LED circuit starts to operate, when the difference between the reference voltage and the variation voltage is less than a threshold, the control switch module operates in the second operation mode to reduce the transduction value of the output stage. . 如請求項11所述之發光二極體電路,其中於該發 光二極體電路運作中,當該參考電壓以及該變動電壓間之一差距大於一臨界值時,該控制開關模組操作於該第一操作模式中,以提升該輸出級之轉導值,當該參考電壓以及該變動電壓間之該差距小於該臨界值時,該控制開關模組操作於該第二操作模式中,以降低該輸出級之轉導值。 The illuminating diode circuit of claim 11, wherein the illuminating diode circuit In the operation of the optical diode circuit, when a difference between the reference voltage and the varying voltage is greater than a threshold, the control switch module operates in the first operating mode to increase the transduction value of the output stage. When the difference between the reference voltage and the varying voltage is less than the threshold, the control switch module operates in the second mode of operation to reduce the transduction value of the output stage. 如請求項11所述之發光二極體電路,其中當該發光二極體電路開始運作時,該控制開關模組操作於該第一操作模式中,以提升該輸出級之轉導值,當該發光二極體電路開始運作超過一特定時間後,該控制開關模組操作於該第二操作模式中,以降低該輸出級之轉導值。 The illuminating diode circuit of claim 11, wherein when the illuminating diode circuit starts to operate, the control switch module operates in the first operating mode to increase the transducing value of the output stage. After the LED circuit starts to operate for a certain period of time, the control switch module operates in the second mode of operation to reduce the transduction value of the output stage. 如請求項7所述之發光二極體電路,其中該波寬調變器更自一振盪器接收一振盪電壓,該波寬調變器實質上是根據該誤差放大器輸出端以及該振盪電壓產生該開關訊號。 The illuminating diode circuit of claim 7, wherein the undulating modulator receives an oscillating voltage from an oscillator, the undulating modulator is substantially generated according to the output of the error amplifier and the oscillating voltage The switch signal. 如請求項16所述之發光二極體電路,其中該振盪電壓為一鋸齒狀波形電壓。 The illuminating diode circuit of claim 16, wherein the oscillating voltage is a sawtooth waveform voltage. 如請求項16所述之發光二極體電路,其中該閘極控制器為一電流源。The illuminating diode circuit of claim 16, wherein the gate controller is a current source.
TW99117247A 2010-05-28 2010-05-28 Error amplifier and led circuit comprising the same TWI411225B (en)

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7071630B1 (en) * 2003-11-24 2006-07-04 National Semiconductor Corporation Closed loop magnetic boost LED driver system and method
JP2010021911A (en) * 2008-07-14 2010-01-28 Nec Electronics Corp Operational amplifier

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7071630B1 (en) * 2003-11-24 2006-07-04 National Semiconductor Corporation Closed loop magnetic boost LED driver system and method
JP2010021911A (en) * 2008-07-14 2010-01-28 Nec Electronics Corp Operational amplifier

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