TWI408821B - - Google Patents
Info
- Publication number
- TWI408821B TWI408821B TW098142586A TW98142586A TWI408821B TW I408821 B TWI408821 B TW I408821B TW 098142586 A TW098142586 A TW 098142586A TW 98142586 A TW98142586 A TW 98142586A TW I408821 B TWI408821 B TW I408821B
- Authority
- TW
- Taiwan
- Prior art keywords
- type
- semiconductor layer
- layer
- intrinsic
- type semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 abstract 7
- 239000010409 thin film Substances 0.000 abstract 3
- 239000010408 film Substances 0.000 abstract 2
- 229910021424 microcrystalline silicon Inorganic materials 0.000 abstract 2
- 229910021423 nanocrystalline silicon Inorganic materials 0.000 abstract 2
- 230000010748 Photoabsorption Effects 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 238000001228 spectrum Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Photovoltaic Devices (AREA)
Abstract
Thin-film solar cells (TFSC) containing nanocrystalline silicon and microcrystalline silicon are mainly composed of a substrate, a first conductive film, a P-i-N type semiconductor structure layer, and a second conductive film and an upper electrode. The P-i-N type semiconductor structure layer has a P-type semiconductor layer, an intrinsic type (i type) semiconductor layer and an N-type semiconductor layer, wherein the intrinsic type (i type) semiconductor layer is formed by interlacing and stacking a plurality of nanocrystalline silicon thin film layers and at least one microcrystalline silicon thin film layer. The use of intrinsic type (i type) semiconductor layer can effectively enhance the photo absorption range of visible light and red, UV light spectra and electron mobility to ensure that various electrical characteristics are effectively enhanced, thereby achieving the purpose of improving solar cell photo conversion efficiency.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW098142586A TW201121065A (en) | 2009-12-11 | 2009-12-11 | Thin-film solar cells containing nanocrystalline silicon and microcrystalline silicon. |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW098142586A TW201121065A (en) | 2009-12-11 | 2009-12-11 | Thin-film solar cells containing nanocrystalline silicon and microcrystalline silicon. |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201121065A TW201121065A (en) | 2011-06-16 |
| TWI408821B true TWI408821B (en) | 2013-09-11 |
Family
ID=45045417
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098142586A TW201121065A (en) | 2009-12-11 | 2009-12-11 | Thin-film solar cells containing nanocrystalline silicon and microcrystalline silicon. |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TW201121065A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI557425B (en) * | 2015-11-24 | 2016-11-11 | 財團法人金屬工業研究發展中心 | Optoelectronic structure with anti-reflection conductive film |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI482296B (en) * | 2011-07-27 | 2015-04-21 | Univ Nat Sun Yat Sen | Solar cell structure having a nano anti-reflection layer |
| TWI475703B (en) * | 2011-12-27 | 2015-03-01 | Nexpower Technology Corp | Thin film solar cell |
| TWI455343B (en) | 2012-04-20 | 2014-10-01 | 財團法人工業技術研究院 | P-I-N microcrystalline germanium structure of thin film solar cell and preparation method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200849635A (en) * | 2007-05-01 | 2008-12-16 | Applied Materials Inc | Method of forming thin film solar cells |
| TW200945598A (en) * | 2008-04-24 | 2009-11-01 | Contrel Technology Co Ltd | Structure and process of a silicon-based thin film solar-cell with multijunction structure |
-
2009
- 2009-12-11 TW TW098142586A patent/TW201121065A/en unknown
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200849635A (en) * | 2007-05-01 | 2008-12-16 | Applied Materials Inc | Method of forming thin film solar cells |
| TW200945598A (en) * | 2008-04-24 | 2009-11-01 | Contrel Technology Co Ltd | Structure and process of a silicon-based thin film solar-cell with multijunction structure |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI557425B (en) * | 2015-11-24 | 2016-11-11 | 財團法人金屬工業研究發展中心 | Optoelectronic structure with anti-reflection conductive film |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201121065A (en) | 2011-06-16 |
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