TWI401798B - Layout structure of power mos transistor - Google Patents

Description

Power metal oxide semi-transistor layout structure

The invention relates to the layout structure of a gold-oxygen semi-transistor, in particular to a layout structure of a power MOS transistor.

Power Golden Oxygen Semi-Crystal System A special metal oxide semi-transistor designed to provide and switch power to an integrated circuit. Accordingly, power MOS transistors need to have the ability to operate at high voltages. The general power MOS semi-electro-crystal system is fabricated in a complementary metal oxide semi-transistor (CMOS) process to achieve a large size, enabling operation at high voltages. On the other hand, the power MOS transistor needs to provide a large output current. Therefore, in general, thousands to hundreds of thousands of transistor units are aggregated into one power MOS semi-transistor, wherein each transistor unit can output a small current, and the integrated power MOS semi-transistor is Can output a large current.

Figure 1 shows a schematic layout of a conventional power MOS transistor. As shown in FIG. 1, the power MOS transistor 100 includes a transistor unit 110. The transistor unit 110 includes a source region 120, a gate region 130, a drain region 140, and a body region 150. Both the drain region 140 and the body region 150 have a rectangular layout shape. The source region 120 surrounds the body region 150 to form an enlarged rectangle. The gate region 130 isolates the drain region 140 and the source region 120.

As previously mentioned, a power MOS semi-electron system consists of thousands to hundreds of thousands of transistor units. Therefore, the power MOS transistor 100 includes a plurality of transistor units closely aligned with each other in a layout structure, and The layout structure of the transistors is equivalent to the transistor unit 110. Since the transistor unit 110 is limited by its layout structure and can only provide a limited current output, in order to meet the high current demand required by the industry, the conventional power MOS transistor needs to contain a large number of transistor units, thereby resulting in manufacturing costs. Raise.

Accordingly, it is necessary to design a layout structure of a power MOS transistor, which enables a single transistor unit to have a higher current output capability, so that the power MOS transistor can have a larger ratio than the conventional one under the same area. The high current output capability of the power MOS semi-transistor achieves the goal of cost saving.

The invention discloses a layout structure of a power MOS semi-transistor, which can specifically increase the circumference of the source region, thereby achieving the purpose of increasing the output current.

A power MOS transistor according to an embodiment of the present invention has a plurality of transistor units, and the layout structure of the transistor unit includes a drain region, a plurality of body regions, a plurality of source regions, and a gate region. The body regions surround the bungee region. The source regions are formed by extending non-uniformly outward from the periphery of each body region. The gate region is located between the drain region and the source regions and has at least three wires connecting the gate regions of adjacent transistor units. The contact regions of the drain regions, the body regions and the source regions are all located on the same side of the layout structure, and the layout structure of the transistor units is symmetrical with respect to the center of the transistor unit.

Another embodiment of the present invention is a power MOS transistor having a plurality of A transistor unit, the layout structure of the transistor unit comprises a drain region, a plurality of body regions, a plurality of source regions and a gate region. The body regions surround the bungee region. The source regions extend outward from each side of each body region. The gate region is located between the drain region and the source regions and has at least three wires connecting the gate regions of adjacent transistor units. The contact regions of the drain regions, the body regions and the source regions are all located on the same side of the layout structure, and the layout structure of the transistor units is symmetrical with respect to the center of the transistor unit.

Fig. 2 is a view showing the layout structure of a power oxy-oxygen semiconductor according to an embodiment of the present invention. As shown in FIG. 2, the power MOS transistor 200 includes a plurality of transistor units 210. The transistor unit 210 includes a drain region 220, a plurality of body regions 230, a plurality of source regions 240, and a gate region 250. The source regions 240 surround the drain regions 220, and the source regions 240 extend outwardly from the periphery of each body region 230 in a non-uniform manner. The gate region 250 is located between the drain region 220 and the source regions 240 and has four wires 251 connecting the gate regions 250 of adjacent transistor units. The layout of the transistor unit 210 is symmetrical with respect to the center of the transistor unit 210.

As shown in FIG. 2, each of the body regions 230 and the source regions 240 extending outward from each of the body regions 230 in a non-uniform manner have a cross-shaped layout structure. Therefore, the source region 240 of the transistor unit 210 has a source region of the transistor unit 110 under the same area of the transistor unit as compared with the conventional power MOS transistor of FIG. 120 longer perimeter.

According to the conventional component formula: Where W is the perimeter of the source and I _ds is the current supplied by the transistor unit. It can be seen from the above formula that the current amount I _{ds is} proportional to the source circumference W. Therefore, the transistor unit 210 can provide a higher current than the transistor unit 110 because of its larger source perimeter.

The layout structure of the power MOS semi-transistor of the present invention is not limited to the cross structure shown in FIG. 2, but should be any layout structure including a source region extending outward from the body region in a non-uniform manner. Fig. 3 is a view showing the layout structure of a power MOS transistor according to another embodiment of the present invention. As shown in FIG. 3, the power MOS transistor 300 includes a plurality of transistor units 310. The transistor unit 310 includes a drain region 320, a plurality of body regions 330, a plurality of source regions 340, and a gate region 350. The source regions 340 surround the drain regions 320, and the source regions 340 extend outward from each of the body regions 330 in a non-uniform manner. The gate region 350 is located between the drain region 320 and the source regions 340 and has four wires 351 connected to the gate regions 350 of adjacent transistor units. The layout of the transistor unit 310 is symmetrical with respect to the center of the transistor unit 310.

The transistor unit 310 and the transistor unit 210 of FIG. 2 have different layout structures, and similar effects can be achieved. As shown in FIG. 3, the layout of the body regions 330 is circular, and the source regions 340 do not completely cover the periphery of the body regions 330.

Fig. 4 is a view showing the layout structure of a power oxy-oxide semiconductor according to another embodiment of the present invention. As shown in FIG. 4, the power MOS transistor 400 includes a plurality of transistor units 410. The transistor unit 410 includes a bungee A region 420, a plurality of body regions 430, a plurality of source regions 440, and a gate region 450. The source regions 440 surround the drain regions 420, and the source regions 440 extend outwardly from the periphery of each body region 430 with a non-uniformity. The gate region 450 is located between the drain region 420 and the source regions 440, and has three wires 351 connected to the gate regions of adjacent transistor units. The layout of the transistor unit 410 is symmetrical with respect to the center of the transistor unit 410.

The transistor unit 410 and the transistor unit 210 of FIG. 2 and the transistor unit 310 of FIG. 3 have different layout structures, but similar effects can be achieved. As shown in FIG. 4, the transistor unit 410 is hexagonal, and the number of the source regions 440 is three, and the angle between adjacent source regions 440 extending from the same body region 430 is 120 degrees.

The term "non-uniformity" of the present invention is not limited to the extent of the outward extension, and includes the fact that the lengths of the source regions extending outward from the body region need not be equal, and the source regions are not required to be included. All of the conditions surrounding the body region.

In summary, the layout structure of the power MOS semi-transistor of the present invention is skillfully increasing the circumference of the source region by layout techniques, thereby improving the output current. Compared with the conventional power MOS semi-transistor, the power MOS semi-transistor of the present invention can provide a higher output voltage under the same area, so that the same effect can be achieved with a smaller circuit area, thereby achieving cost saving. purpose.

The technical and technical features of the present invention have been disclosed as above, and those skilled in the art can still make various substitutions and modifications without departing from the spirit and scope of the invention. Therefore, the protection model of the present invention The invention is not limited to the embodiments disclosed, but includes various alternatives and modifications without departing from the scope of the invention.

100‧‧‧Power MOS semi-transistor

110‧‧‧Optocell unit

120‧‧‧ source area

130‧‧ ‧ gate area

140‧‧‧Bungee Area

150‧‧‧ body area

200‧‧‧Power MOS semi-transistor

210‧‧‧Optocell unit

220‧‧‧Bungee Area

230‧‧‧ body area

240‧‧‧ source area

250‧‧ ‧ gate area

300‧‧‧Power MOS semi-transistor

310‧‧‧Optocell unit

320‧‧‧Bungee Area

330‧‧‧ Body area

340‧‧‧ source area

350‧‧ ‧ gate area

400‧‧‧Power MOS semi-transistor

410‧‧‧Optocell unit

420‧‧‧Bungee Area

430‧‧‧ body area

440‧‧‧ source area

450‧‧‧The gate area

1 is a schematic view showing a layout structure of a conventional power MOS transistor; FIG. 2 is a schematic view showing a layout structure of a power MOS transistor according to an embodiment of the present invention; and FIG. 3 is a view showing another embodiment of the present invention. A schematic diagram of a layout structure of a power MOS transistor; and FIG. 4 is a schematic view showing a layout structure of a power MOS transistor according to another embodiment of the present invention.

200‧‧‧Power MOS semi-transistor

210‧‧‧Optocell unit

220‧‧‧Bungee Area

230‧‧‧ body area

240‧‧‧ source area

250‧‧ ‧ gate area

Claims (16)

A power oxy-oxide semi-transistor having a plurality of transistor units, the layout structure of the transistor unit comprising: a drain region; a plurality of body regions surrounding the drain region; and a plurality of source regions from each body region Surrounding outwardly with a non-uniformity; a gate region is located between the drain region and the source regions; and at least three wires connecting the gate regions of adjacent transistor units; The contact regions of the drain regions, the body regions and the source regions are all located on the same side of the layout structure, and the layout structure of the transistor units is symmetrical with respect to the center of the transistor unit. The power MOS semi-transistor according to claim 1, wherein the number of the source regions extending outward from each of the body regions in a non-uniform manner is four. The power MOS semi-transistor according to claim 1, wherein the number of the source regions extending outward from each of the body regions by a non-uniformity is three, and adjacent sources extending from the same body region The angle of the zone is 120 degrees. A power MOS transistor according to claim 1, wherein the transistor unit has a rectangular shape. A power oxynitride semiconductor according to claim 1, wherein the transistor unit has a hexagonal shape. The power MOS semi-transistor of claim 1, wherein the source regions completely encapsulate the body regions. A power MOS semi-transistor according to claim 1, wherein the source regions The body regions are not completely covered. According to claim 1, the power metal oxide semi-transistor has a cross structure formed by each body region and a source region extending outward from the periphery thereof in a non-uniform manner. A power oxy-oxide semi-transistor having a plurality of transistor units, the layout structure of the transistor unit comprising: a drain region; a plurality of body regions surrounding the drain region; and a plurality of source regions from each body region Each of the sides extends outwardly; a gate region is located between the drain region and the source regions; and at least three wires are connected to the gate region of the adjacent transistor unit; wherein the gate region The junctions of the regions, the body regions and the source regions are all located on the same side of the layout structure, and the layout structure of the transistor units is symmetrical with respect to the center of the transistor unit. The power MOS semi-transistor according to claim 9, wherein the number of the source regions extending outward from each side of each body region is four. The power MOS transistor according to claim 9, wherein the number of the source regions extending outward from each side of each body region is three, and the angle between adjacent source regions extending from the same body region It is 120 degrees. A power MOS transistor according to claim 9, wherein the transistor unit has a rectangular shape. A power oxy-halide transistor according to claim 9, wherein the transistor unit has a hexagonal shape. The power MOS semi-transistor of claim 9, wherein the source regions completely encapsulate the body regions. The power MOS semi-transistor according to claim 9, wherein the source regions do not completely cover the body regions. A power MOS transistor according to claim 9, wherein each body region and the source region extending outward from each of the sides form a cross structure.