TWI400811B - Method for manufacturing dye-sensitized solar cell - Google Patents
Method for manufacturing dye-sensitized solar cell Download PDFInfo
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- TWI400811B TWI400811B TW098101727A TW98101727A TWI400811B TW I400811 B TWI400811 B TW I400811B TW 098101727 A TW098101727 A TW 098101727A TW 98101727 A TW98101727 A TW 98101727A TW I400811 B TWI400811 B TW I400811B
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- dye
- substrate
- solar cell
- sensitized solar
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- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 238000000034 method Methods 0.000 title claims description 8
- 239000000758 substrate Substances 0.000 claims description 63
- 239000004065 semiconductor Substances 0.000 claims description 54
- 239000002245 particle Substances 0.000 claims description 38
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 9
- 239000003792 electrolyte Substances 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000003054 catalyst Substances 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 3
- 239000002105 nanoparticle Substances 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 239000000853 adhesive Substances 0.000 claims 1
- 230000001070 adhesive effect Effects 0.000 claims 1
- 239000012780 transparent material Substances 0.000 claims 1
- 239000010408 film Substances 0.000 description 63
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 239000004408 titanium dioxide Substances 0.000 description 3
- -1 iodide ions Chemical class 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 230000003197 catalytic effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Hybrid Cells (AREA)
- Photovoltaic Devices (AREA)
Description
本發明係有關於一種太陽能電池之製造方法，特別係有關於一種染料敏化太陽能電池之製造方法。The present invention relates to a method of manufacturing a solar cell, and more particularly to a method of manufacturing a dye-sensitized solar cell.
習知染料敏化太陽能電池(Dye-sensitized solar cell,DSSC)之製造方法係直接將二氧化鈦(TiO2 )漿液以塗佈或網印方式形成於具有ITO導電膜之基板上，再進行烘乾及燒結製程以形成二氧化鈦薄膜層，然在二氧化鈦薄膜層與基板共同燒結時，高溫會造成基板上之ITO導電膜導電性變差，且使用之基板若為軟性電路板，則軟性電路板無法承受高溫而導致變形，使得產品良率低，反之，若燒結溫度太低，則二氧化鈦薄膜層無法有效燒結完成，造成產品光電轉換效率不佳。The method for manufacturing a Dye-sensitized solar cell (DSSC) is to directly form a titanium dioxide (TiO 2 ) slurry on a substrate having an ITO conductive film by coating or screen printing, and then drying and The sintering process is to form a titanium dioxide thin film layer. However, when the titanium dioxide thin film layer and the substrate are co-sintered, the high temperature causes the conductivity of the ITO conductive film on the substrate to be deteriorated, and if the substrate used is a flexible circuit board, the flexible circuit board cannot withstand the high temperature. The deformation causes the product yield to be low. Conversely, if the sintering temperature is too low, the titanium dioxide film layer cannot be effectively sintered, resulting in poor photoelectric conversion efficiency of the product.
本發明之主要目的係在於提供一種染料敏化太陽能電池之製造方法，其係包含下列步驟：首先，提供一第一基板，其係具有一第一表面及一形成於該第一表面之第一透明導電膜；提供一多孔性半導體薄膜，其係具有複數個奈米半導體粒子及複數個微細孔；將該多孔性半導體薄膜浸於一包含有複數個染料粒子之染料槽內，以使該些染料粒子通過該些微細孔而附著於該些奈米半導體粒子上；將附著有該些染料粒子之該多孔性半導體薄膜貼設於該第一基板之該第一透明導電膜上；提供一第二基板，其係具有一第二表面及一形成於該第二表面之第二透明導電膜；以及將該第二基板結合於該第一基板，其中該多孔性半導體薄膜係位於該第二透明導電膜與該第一透明導電膜之間。由於本發明係直接將已燒結完成之該多孔性半導體薄膜浸漬染料使該些染料粒子附著於該些奈米半導體粒子上，再將附著有該些染料粒子之該多孔性半導體薄膜貼設於該第一基板之該第一透明導電膜上，可防止高溫造成該第一基板上之該第一透明導電膜導電性變差、軟性電路板無法承受高溫而變形或該多孔性半導體薄膜無法有效燒結完成，使得產品良率低或產品光電轉換效率不佳之現象。The main object of the present invention is to provide a method for fabricating a dye-sensitized solar cell, comprising the steps of: firstly providing a first substrate having a first surface and a first surface formed on the first surface a transparent conductive film; providing a porous semiconductor film having a plurality of nano semiconductor particles and a plurality of micropores; immersing the porous semiconductor film in a dye bath containing a plurality of dye particles to The dye particles are attached to the nano semiconductor particles through the micropores; the porous semiconductor film to which the dye particles are attached is attached to the first transparent conductive film of the first substrate; a second substrate having a second surface and a second transparent conductive film formed on the second surface; and bonding the second substrate to the first substrate, wherein the porous semiconductor film is located in the second Between the transparent conductive film and the first transparent conductive film. In the present invention, the porous semiconductor film which has been sintered is directly impregnated with the dye to adhere the dye particles to the nano semiconductor particles, and the porous semiconductor film to which the dye particles are attached is attached to the porous semiconductor film. The first transparent conductive film of the first substrate prevents high temperature from causing deterioration of conductivity of the first transparent conductive film on the first substrate, deformation of the flexible circuit board cannot withstand high temperature, or the porous semiconductor film cannot be effectively sintered. Completion, resulting in low product yield or poor photoelectric conversion efficiency.
請參閱第1及2A至2H圖，依據本發明之一具體實施例係揭示一種染料敏化太陽能電池之製造方法，其係包含下列步驟：首先，請參閱第1圖之步驟11及第2A圖，提供一第一基板110，其係具有一第一表面111及一形成於該第一表面111之第一透明導電膜112，在本實施例中，該第一基板110係可選自於軟性電路板或玻璃基板；接著，請參閱第1圖之步驟12及第2B圖，提供一多孔性半導體薄膜120，其係具有複數個奈米半導體粒子121及複數個微細孔122，該多孔性半導體薄膜120之厚度係介於6-30μm，該些奈米半導體粒子121係為二氧化鈦(TiO2 )奈米粒子，在本實施例中，該多孔性半導體薄膜120係為已燒結完成之半導體薄膜；之後，請參閱第1圖之步驟13及第2C圖，將該多孔性半導體薄膜120浸於一包含有複數個染料粒子130之染料槽D內，以使該些染料粒子130通過該些微細孔122而附著於該些奈米半導體粒子121上；接著，請參閱第1圖之步驟14及第2D圖，將附著有該些染料粒子130之該多孔性半導體薄膜120貼設於該第一基板110之該第一透明導電膜112上，此外，在此步驟中係另包含形成一導電膠140於該第一基板110與該多孔性半導體薄膜120之間之步驟，在本實施例中，該導電膠140係為透明材質，且該導電膠140係包含有複數個導電粒子141以使該第一基板110與該多孔性半導體薄膜120電性連接，較佳地，請參閱第3圖，當該第一基板110為軟性電路板時，該第一基板110係可為一基板條A之至少一軟性電路板，該多孔性半導體薄膜120係可以reel to reel方式貼設於該第一基板110上，其係可提高生產效率；之後，請參閱第1圖之步驟15及第2E圖，提供一第二基板150，其係具有一第二表面151及一形成於該第二表面151之第二透明導電膜152，在本實施例中，該第二基板150係可選自於軟性電路板或玻璃基板，接著，請參閱第1圖之步驟16及第2F圖，形成一觸媒金屬層160於該第二透明導電膜152上，以形成一相對電極，在本實施例中，該觸媒金屬層160之材質係為鉑(Pt)；之後，請參閱第1圖之步驟17、步驟18及第2G圖，將該第二基板150結合於該第一基板110，其中該多孔性半導體薄膜120係位於該第二透明導電膜152與該第一透明導電膜112之間，且設置一支撐材170於該第一基板110與該第二基板150之間，並形成一密閉空間S，該多孔性半導體薄膜120係位於該密閉空間S內，最後，請參閱第1圖之步驟19及第2H圖，設置一電解液180於該密閉空間S內，該電解液180係用以提供電子給該些染料粒子130，以還原該些染料粒子130，該電解液180係可為包含碘離子及碘錯離子(I- /I3 - )所組成之電解液。本發明係直接將已燒結完成之該多孔性半導體薄膜120浸漬染料使該些染料粒子130附著於該些奈米半導體粒子121上，再將附著有該些染料粒子130之該多孔性半導體薄膜120貼設於該第一基板110之該第一透明導電膜112上，以防止高溫造成該第一基板110上之該第一透明導電膜112導電性變差、軟性電路板無法承受高溫而變形或該多孔性半導體薄膜120無法有效燒結完成，使得產品良率低或產品光電轉換效率不佳之現象。Referring to FIGS. 1 and 2A to 2H, a method for fabricating a dye-sensitized solar cell according to an embodiment of the present invention includes the following steps: First, refer to step 11 and FIG. 2A of FIG. A first substrate 110 is provided with a first surface 111 and a first transparent conductive film 112 formed on the first surface 111. In this embodiment, the first substrate 110 can be selected from softness. a circuit board or a glass substrate; then, referring to steps 12 and 2B of FIG. 1, a porous semiconductor film 120 having a plurality of nano semiconductor particles 121 and a plurality of micropores 122, the porosity The thickness of the semiconductor thin film 120 is 6-30 μm, and the nano semiconductor particles 121 are titanium dioxide (TiO 2 ) nano particles. In the embodiment, the porous semiconductor film 120 is a sintered semiconductor film. After that, referring to step 13 and FIG. 2C of FIG. 1, the porous semiconductor film 120 is immersed in a dye bath D containing a plurality of dye particles 130, so that the dye particles 130 pass through the fine particles. Hole 122 is attached to The first semiconductor substrate 121 is attached to the first semiconductor substrate 110. On the transparent conductive film 112, in addition, in this step, a step of forming a conductive paste 140 between the first substrate 110 and the porous semiconductor film 120 is further included. In this embodiment, the conductive paste 140 is The conductive material 140 includes a plurality of conductive particles 141 for electrically connecting the first substrate 110 and the porous semiconductor film 120. Preferably, refer to FIG. 3, when the first substrate 110 is used. In the case of a flexible circuit board, the first substrate 110 can be at least one flexible circuit board of the substrate strip A. The porous semiconductor film 120 can be attached to the first substrate 110 in a reel to reel manner. The production efficiency is improved. Then, referring to steps 15 and 2E of FIG. 1 , a second substrate 150 having a second surface 151 and a second transparent conductive film 152 formed on the second surface 151 is provided. In this embodiment, the second substrate 15 0 can be selected from a flexible circuit board or a glass substrate. Then, referring to steps 16 and 2F of FIG. 1, a catalyst metal layer 160 is formed on the second transparent conductive film 152 to form a counter electrode. In this embodiment, the material of the catalyst metal layer 160 is platinum (Pt); then, referring to step 17, step 18, and 2G of FIG. 1, the second substrate 150 is bonded to the first substrate 150. a substrate 110, wherein the porous semiconductor film 120 is disposed between the second transparent conductive film 152 and the first transparent conductive film 112, and a support material 170 is disposed on the first substrate 110 and the second substrate 150. And forming a sealed space S, the porous semiconductor film 120 is located in the sealed space S. Finally, referring to steps 19 and 2H of FIG. 1, an electrolyte 180 is disposed in the sealed space S. The electrolyte 180 is used to supply electrons to the dye particles 130 to reduce the dye particles 130. The electrolyte 180 may be an electrolyte composed of iodide ions and iodine ions (I - /I 3 - ). liquid. In the present invention, the porous semiconductor film 120 which has been sintered is directly immersed in a dye to adhere the dye particles 130 to the nano semiconductor particles 121, and the porous semiconductor film 120 to which the dye particles 130 are attached is attached. The first transparent conductive film 112 is disposed on the first transparent conductive film 112 of the first substrate 110 to prevent high temperature from causing the first transparent conductive film 112 on the first substrate 110 to have poor conductivity, and the flexible circuit board cannot withstand high temperature and deform or The porous semiconductor film 120 cannot be effectively sintered, resulting in a low yield of the product or a poor photoelectric conversion efficiency of the product.
本發明之保護範圍當視後附之申請專利範圍所界定者為準，任何熟知此項技藝者，在不脫離本發明之精神和範圍內所作之任何變化與修改，均屬於本發明之保護範圍。The scope of the present invention is defined by the scope of the appended claims, and any changes and modifications made by those skilled in the art without departing from the spirit and scope of the invention are within the scope of the present invention. .
11．．．提供一第一基板，其係具有一第一表面及一形成於該第一表面之第一透明導電膜11. . . Providing a first substrate having a first surface and a first transparent conductive film formed on the first surface
12．．．提供一多孔性半導體薄膜，其係具有複數個奈米半導體粒子及複數個微細孔12. . . Providing a porous semiconductor film having a plurality of nano semiconductor particles and a plurality of micropores
13．．．將該多孔性半導體薄膜浸於一包含有複數個染料粒子之染料槽內，以使該些染料粒子通過該些微細孔而附著於該些奈米半導體粒子上13. . . Immersing the porous semiconductor film in a dye bath containing a plurality of dye particles, so that the dye particles are attached to the nano semiconductor particles through the micropores
14．．．將附著有該些染料粒子之該多孔性半導體薄膜貼設於該第一基板之該第一透明導電膜上14. . . Attaching the porous semiconductor film to which the dye particles are attached to the first transparent conductive film of the first substrate
15．．．提供一第二基板，其係具有一第二表面及一形成於該第二表面之第二透明導電膜15. . . Providing a second substrate having a second surface and a second transparent conductive film formed on the second surface
16．．．形成一觸媒金屬層於該第二透明導電膜上，以形成一相對電極16. . . Forming a catalyst metal layer on the second transparent conductive film to form a counter electrode
17．．．將該第二基板結合於該第一基板，其中該多孔性半導體薄膜係位於該第二透明導電膜與該第一透明導電膜之間17. . . Bonding the second substrate to the first substrate, wherein the porous semiconductor film is between the second transparent conductive film and the first transparent conductive film
18．．．設置一支撐材於該第一基板與該第二基板之間，並形成一密閉空間18. . . Forming a support material between the first substrate and the second substrate, and forming a closed space
19．．．設置一電解液於該密閉空間內19. . . Providing an electrolyte in the closed space
100．．．染料敏化太陽能電池100. . . Dye sensitized solar cell
110．．．第一基板110. . . First substrate
111．．．第一表面111. . . First surface
112．．．第一透明導電膜112. . . First transparent conductive film
120．．．多孔性半導體薄膜120. . . Porous semiconductor film
121．．．奈米半導體粒子121. . . Nano-semiconductor particles
122．．．微細孔122. . . Micro hole
130．．．染料粒子130. . . Dye particle
140．．．導電膠140. . . Conductive plastic
141．．．導電粒子141. . . Conductive particle
150．．．第二基板150. . . Second substrate
151．．．第二表面151. . . Second surface
152．．．第二透明導電膜152. . . Second transparent conductive film
160．．．觸媒金屬層160. . . Catalytic metal layer
170．．．支撐材170. . . Support material
180．．．電解液180. . . Electrolyte
A．．．基板條A. . . Substrate strip
D．．．染料槽D. . . Dye tank
S．．．密閉空間S. . . hermetic space
第1圖：依據本發明之一具體實施例，一種染料敏化太陽能電池之製作方法流程圖。Figure 1 is a flow chart showing a method of fabricating a dye-sensitized solar cell according to an embodiment of the present invention.
第2A至2H圖：依據本發明之一具體實施例，該染料敏化太陽能電池之製作方法之截面示意圖。2A to 2H are schematic cross-sectional views showing a method of fabricating the dye-sensitized solar cell according to an embodiment of the present invention.
第3圖：依據本發明之一具體實施例，當第一基板為一基板條之至少一軟性電路板時，多孔性半導體薄膜以reel to reel方式貼設於第一基板之上視圖。FIG. 3 is a view showing the porous semiconductor film attached to the first substrate in a reel to reel manner when the first substrate is at least one flexible circuit board of a substrate strip according to an embodiment of the present invention.
11．．．提供一第一基板，其係具有一第一表面及一形成於該第一表面之第一透明導電膜11. . . Providing a first substrate having a first surface and a first transparent conductive film formed on the first surface
12．．．提供一多孔性半導體薄膜，其係具有複數個奈米半導體粒子及複數個微細孔12. . . Providing a porous semiconductor film having a plurality of nano semiconductor particles and a plurality of micropores
13．．．將該多孔性半導體薄膜浸於一包含有複數個染料粒子之染料槽內，以使該些染料粒子通過該些微細孔而附著於該些奈米半導體粒子上13. . . Immersing the porous semiconductor film in a dye bath containing a plurality of dye particles, so that the dye particles are attached to the nano semiconductor particles through the micropores
14．．．將附著有該些染料粒子之該多孔性半導體薄膜貼設於該第一基板之該第一透明導電膜上14. . . Attaching the porous semiconductor film to which the dye particles are attached to the first transparent conductive film of the first substrate
15．．．提供一第二基板，其係具有一第二表面及一形成於該第二表面之第二透明導電膜15. . . Providing a second substrate having a second surface and a second transparent conductive film formed on the second surface
16．．．形成一觸媒金屬層於該第二透明導電膜上，以形成一相對電極16. . . Forming a catalyst metal layer on the second transparent conductive film to form a counter electrode
17．．．將該第二基板結合於該第一基板，其中該多孔性半導體薄膜係位於該第二透明導電膜與該第一透明導電膜之間17. . . Bonding the second substrate to the first substrate, wherein the porous semiconductor film is between the second transparent conductive film and the first transparent conductive film
18．．．設置一支撐材於該第一基板與該第二基板之間，並形成一密閉空間18. . . Forming a support material between the first substrate and the second substrate, and forming a closed space
19．．．設置一電解液於該密閉空間內19. . . Providing an electrolyte in the closed space
Claims (11)
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050166958A1 (en) * | 2004-02-03 | 2005-08-04 | Joung-Won Park | Dye-sensitized solar cell having enlarged wavelength range for light absorption and method of fabricating same |
| TWM323109U (en) * | 2006-12-07 | 2007-12-01 | Advance Design Technology Inc | Dye-sensitize solar cell with embedded nano gold particles as the quantum dots |
| TW200816501A (en) * | 2006-09-27 | 2008-04-01 | Ind Tech Res Inst | Method of sealing solar cells |
| US20080087322A1 (en) * | 2006-10-13 | 2008-04-17 | Korea Institute Of Science And Technology | Counter electrode having carbon material layer for dye-sensitized photovoltaic cell and method of preparing the same |
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2009
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050166958A1 (en) * | 2004-02-03 | 2005-08-04 | Joung-Won Park | Dye-sensitized solar cell having enlarged wavelength range for light absorption and method of fabricating same |
| TW200816501A (en) * | 2006-09-27 | 2008-04-01 | Ind Tech Res Inst | Method of sealing solar cells |
| US20080087322A1 (en) * | 2006-10-13 | 2008-04-17 | Korea Institute Of Science And Technology | Counter electrode having carbon material layer for dye-sensitized photovoltaic cell and method of preparing the same |
| TWM323109U (en) * | 2006-12-07 | 2007-12-01 | Advance Design Technology Inc | Dye-sensitize solar cell with embedded nano gold particles as the quantum dots |
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