TWI499089B - Light-emitting device structure - Google Patents
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- 239000004065 semiconductor Substances 0.000 claims description 63
- 239000000463 material Substances 0.000 claims description 16
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 6
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- -1 Zn2O3 Chemical compound 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052681 coesite Inorganic materials 0.000 claims description 3
- 229910052593 corundum Inorganic materials 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims description 3
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 229910052682 stishovite Inorganic materials 0.000 claims description 3
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052905 tridymite Inorganic materials 0.000 claims description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 3
- 239000011810 insulating material Substances 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 description 21
- 239000002184 metal Substances 0.000 description 21
- 229910002601 GaN Inorganic materials 0.000 description 13
- 238000000034 method Methods 0.000 description 13
- 239000000758 substrate Substances 0.000 description 11
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 8
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 3
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004408 titanium dioxide Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 206010036790 Productive cough Diseases 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- BEQNOZDXPONEMR-UHFFFAOYSA-N cadmium;oxotin Chemical compound [Cd].[Sn]=O BEQNOZDXPONEMR-UHFFFAOYSA-N 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 210000003802 sputum Anatomy 0.000 description 1
- 208000024794 sputum Diseases 0.000 description 1
- SKRWFPLZQAAQSU-UHFFFAOYSA-N stibanylidynetin;hydrate Chemical compound O.[Sn].[Sb] SKRWFPLZQAAQSU-UHFFFAOYSA-N 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Description
本揭露係關於一種發光元件結構，特別係關於一種在N型電極具有布拉格反射結構之發光元件結構。The present disclosure relates to a light-emitting element structure, and more particularly to a light-emitting element structure having a Bragg reflection structure at an N-type electrode.
半導體發光元件，(例如發光二極體及半導體雷射)已經被廣泛地應用在各種交通號誌、車用電子、液晶顯示器背光模組以及一般照明等。發光元件基本上係在基板上依序形成N型半導體層、發光元件、P型半導體層，並採用在P型半導體層及N型半導體層上形成電極，藉由自半導體層注入之電洞與電子再結合，在發光元件上產生光束，其經由P型半導體層上之透光性電極或基板射出發光之二極體。Semiconductor light-emitting elements, such as light-emitting diodes and semiconductor lasers, have been widely used in various traffic signals, automotive electronics, liquid crystal display backlight modules, and general illumination. The light-emitting element basically forms an N-type semiconductor layer, a light-emitting element, and a P-type semiconductor layer on the substrate, and forms an electrode on the P-type semiconductor layer and the N-type semiconductor layer, and the hole is injected from the semiconductor layer. The electrons are recombined to generate a light beam on the light-emitting element, which emits the light-emitting diode via the light-transmissive electrode or substrate on the P-type semiconductor layer.
發光二極體依據電極設置之位置分類包含垂直電極結構之發光二極體與橫向電極結構之發光二極體等，不論是垂直電極結構或是橫向電極結構之發光二極體，其焊墊(bond pad)或電極皆會吸收發光層所發出之光線，如此會降低原本發光二極體應該有之發光效能，且光線被焊墊或電極吸收後會轉成熱能而導致焊墊或電極會溫度逐漸升高，甚至發生過熱之情況。The light-emitting diode classifies the light-emitting diode of the vertical electrode structure and the light-emitting diode of the lateral electrode structure according to the position of the electrode arrangement, and the soldering pad of the vertical electrode structure or the lateral electrode structure of the light-emitting diode ( The bond pad or the electrode absorbs the light emitted by the light-emitting layer, which reduces the luminous efficacy of the original light-emitting diode, and the light is converted into heat by the pad or the electrode, causing the temperature of the pad or electrode to be caused. Gradually rising, even overheating.
且如何將發光層所產生的光束取出至發光元件外部，乃目前半導體發光元件之重要的改善問題。在習知技術中，研發人員使用金屬反射層，俾便發光層朝向上發出之光束不致於在傳播至外界的路徑上受到阻礙物阻擋。然而，金屬反射層經熱處理後，除了可能會有金屬擴散問題影響反射率之外，金屬反射層之金屬本身亦有氧化的問題，金屬氧化後反射率會下降。此外金屬反射層的低反射率及無法依波長調整反射率等缺點，將導致該發光元件之光取出效率相當低。How to extract the light beam generated by the light-emitting layer to the outside of the light-emitting element is an important improvement problem of the semiconductor light-emitting element. In the prior art, the researcher uses a metal reflective layer, and the light beam emitted from the sputum illuminating layer is not blocked by the obstruction on the path to the outside. However, after the metal reflective layer is heat-treated, in addition to the possibility that the metal diffusion problem affects the reflectance, the metal of the metal reflective layer itself also has a problem of oxidation, and the reflectance of the metal is reduced after oxidation. In addition, the low reflectance of the metal reflective layer and the inability to adjust the reflectance according to the wavelength cause a relatively low light extraction efficiency of the light-emitting element.
本揭露提供一種在N型電極具有布拉板反射結構之發光元件結構，可避免電極吸收發光層所發出之光線，藉以提升光取出效率。The present disclosure provides a light-emitting element structure having a baffle reflection structure on an N-type electrode, which can prevent the electrode from absorbing light emitted by the light-emitting layer, thereby improving light extraction efficiency.
本揭露之發光元件結構之一實施例，包含一基板、設置於該基板上之一第一型半導體層、設置於該第一型半導體層上之一主動層、設置於該主動層上之一第二型半導體層、設置於該第二型半導體層上之一第一布拉格反射結構、設置於該第一布拉格反射結構上之一第一電極、設置於該第二型半導體層上之一第二布拉格反射結構、以及設置於該第二布拉格反射結構上之一第二電極。在本揭露之一實施例中，該第一型半導體層、該主動層及該第二型半導體層經由一間隙分隔而形成一第一區域及一第二區域，該第一布拉格反射結構上係設置於該第一區域，該第二布拉格反射結構係設置於該第二區域。An embodiment of the light-emitting device structure of the present disclosure includes a substrate, a first type semiconductor layer disposed on the substrate, an active layer disposed on the first type semiconductor layer, and one of the active layers disposed on the active layer a second type semiconductor layer, a first Bragg reflection structure disposed on the second type semiconductor layer, a first electrode disposed on the first Bragg reflection structure, and one of the second type semiconductor layers a Bragg reflection structure and a second electrode disposed on the second Bragg reflection structure. In an embodiment of the present disclosure, the first type semiconductor layer, the active layer, and the second type semiconductor layer are separated by a gap to form a first region and a second region, and the first Bragg reflection structure is Provided in the first region, the second Bragg reflection structure is disposed in the second region.
上文已相當廣泛地概述本揭露之技術特徵及優點，俾使下文之本揭露詳細描述得以獲得較佳瞭解。構成本揭露之申請專利範圍標的之其它技術特徵及優點將描述於下文。本揭露所屬技術領域中具有通常知識者應瞭解，可相當容易地利用下文揭示之概念與特定實施例可作為修改或設計其它結構或製程而實現與本揭露相同之目的。本揭露所屬技術領域中具有通常知識者亦應瞭解，這類等效建構無法脫離後附之申請專利範圍所界定之本揭露的精神和範圍。The technical features and advantages of the present disclosure have been broadly described above, and the detailed description of the present disclosure will be better understood. Other technical features and advantages of the subject matter of the claims of the present disclosure will be described below. It will be appreciated by those skilled in the art that the present invention may be practiced with the same or equivalents. It is also to be understood by those of ordinary skill in the art that this invention is not limited to the spirit and scope of the disclosure as defined by the appended claims.
在下文中本揭露的實施例係配合所附圖式以闡述細節。圖1顯示本揭露一實施例之發光元件結構10之剖示圖。該發光元件結構10包含一基板11、一第一型半導體層13、一主動層151、一第二型半導體層16、一第一布拉格反射結構165A、一第二布拉格反射結構155、一第一電極19A及一第二電極17。在本揭露之一實施例中，該第一型半導體層13設置於該基板11上，可為一N型半導體層。在本揭露之一實施例中，該第一型半導體層13之材料可為氮化物，例如氮化鋁、氮化鎵、氮化鋁鎵、氮化銦鎵或氮化鋁銦鎵，而該基板11之材料可為Al2 O3 、SiC、GaN、AlN、GaP、Si、ZnO或MnO。The embodiments disclosed herein are incorporated in the drawings to explain the details. 1 shows a cross-sectional view of a light emitting device structure 10 in accordance with an embodiment of the present disclosure. The light emitting device structure 10 includes a substrate 11, a first semiconductor layer 13, an active layer 151, a second semiconductor layer 16, a first Bragg reflection structure 165A, a second Bragg reflection structure 155, and a first The electrode 19A and a second electrode 17. In an embodiment of the present disclosure, the first type semiconductor layer 13 is disposed on the substrate 11 and may be an N-type semiconductor layer. In an embodiment of the present disclosure, the material of the first type semiconductor layer 13 may be a nitride such as aluminum nitride, gallium nitride, aluminum gallium nitride, indium gallium nitride or aluminum indium gallium nitride. The material of the substrate 11 may be Al 2 O 3 , SiC, GaN, AlN, GaP, Si, ZnO or MnO.
在本揭露之一實施例中，該主動層151設置於該第一型半導體層13上，該主動層151可為多重量子井結構，而該主動層151可採用磊晶機台予以製備。在本揭露之一實施例中，該主動層151係相對於該基板11設置於該第一型半導體13上，而該第二型半導體層16則相對於該第一型半導體層13而設置於該主動層151上，其中該第一型半導體層13、該主動層151及該第二型半導體層16經由一間隙21分隔而形成一第一區域133及一第二區域131。該間隙21之底部係位於該第一型半導體層13，亦即局部曝露該第一型半導體層13。In an embodiment of the present disclosure, the active layer 151 is disposed on the first type semiconductor layer 13. The active layer 151 may be a multiple quantum well structure, and the active layer 151 may be prepared by using an epitaxial machine. In an embodiment of the present disclosure, the active layer 151 is disposed on the first type semiconductor 13 with respect to the substrate 11, and the second type semiconductor layer 16 is disposed on the first type semiconductor layer 13 with respect to the first type semiconductor layer 13. On the active layer 151, the first semiconductor layer 13, the active layer 151 and the second semiconductor layer 16 are separated by a gap 21 to form a first region 133 and a second region 131. The bottom of the gap 21 is located on the first type semiconductor layer 13, that is, the first type semiconductor layer 13 is partially exposed.
在本揭露之一實施例中，該第一區域133之第二型半導體層16具有一第一上表面16A，該第二區域131之第二型半導體層16具有一第二上表面16B，該第一上表面16A與該第二上表面16B可係大致上位於同一平面。上述設計可使後續之打線(wire bonding)製程之機台的製程參數(打線高度)一致，因而使提升打線製程之良率。在本揭露之一實施例中，該主動層151之材料可為氮化物，例如氮化鋁、氮化鎵、氮化鋁鎵、氮化銦鎵或氮化鋁銦鎵。在本揭露之一實施例中，該第二型半導體層16為一P型半導體層，其材料可為氮化物，例如氮化鋁、氮化鎵、氮化鋁鎵、氮化銦鎵或氮化鋁銦鎵。In an embodiment of the present disclosure, the second type semiconductor layer 16 of the first region 133 has a first upper surface 16A, and the second type semiconductor layer 16 of the second region 131 has a second upper surface 16B. The first upper surface 16A and the second upper surface 16B may be substantially in the same plane. The above design can make the process parameters (wire height) of the machine of the subsequent wire bonding process uniform, thereby improving the yield of the wire bonding process. In an embodiment of the present disclosure, the material of the active layer 151 may be a nitride such as aluminum nitride, gallium nitride, aluminum gallium nitride, indium gallium nitride or aluminum indium gallium nitride. In one embodiment of the present disclosure, the second type semiconductor layer 16 is a P-type semiconductor layer, and the material thereof may be a nitride such as aluminum nitride, gallium nitride, aluminum gallium nitride, indium gallium nitride or nitrogen. Aluminum indium gallium.
在本揭露之一實施例中，該第一布拉格反射結構165A係設置於該第一區域133且覆蓋該第二型半導體層16之上表面16A，該第一布拉格反射結構165A之材料可選自由SiO2、Zn2O3、ZnO、ITO、Si3N4、Al2O3、MgO、MgF2、TiO、TiO2、TiO、Ta2O5及ZrO2所組成之群組，以交互堆疊之方式形成。在本揭露之一實施例中，該第一布拉格反射結構165A是由二氧化鈦層及二氧化矽層以交互堆疊之方式形成。不同於金屬反射層會因為熱處理而導致金屬擴散或因金屬氧化造成反射率下降，該第一布拉格反射結構165A主要成分係氧化物，故該第一布拉格反射結構165A並無金屬擴散或因金屬氧化造成反射率下降之問題，因此第一布拉格反射結構165A之材料穩定性較一般習知的金屬反射層要高。In an embodiment of the present disclosure, the first Bragg reflector structure 165A is disposed on the first region 133 and covers the upper surface 16A of the second semiconductor layer 16. The material of the first Bragg reflector structure 165A is optional. Groups of SiO2, Zn2O3, ZnO, ITO, Si3N4, Al2O3, MgO, MgF2, TiO, TiO2, TiO, Ta2O5 and ZrO2 are formed by alternate stacking. In an embodiment of the present disclosure, the first Bragg reflection structure 165A is formed by alternately stacking a titanium dioxide layer and a ruthenium dioxide layer. Different from the metal reflective layer, the metal diffusion due to heat treatment or the decrease in reflectance due to metal oxidation, the main composition of the first Bragg reflection structure 165A is oxide, so the first Bragg reflection structure 165A has no metal diffusion or metal oxidation. The problem of a decrease in reflectance is caused, and therefore the material stability of the first Bragg reflection structure 165A is higher than that of a conventional metal reflection layer.
再者，第一布拉格反射結構165A的反射特性可依光束波長進行調整布拉格反射結構(例如材料、厚度)，因此針對特定波長，該第一布拉格反射結構165A的反射率要比一般金屬反射層要高。此外，該第一布拉格反射結構165A主要的材料皆為介電質材料，因此其可達到絕緣效果。Moreover, the reflection characteristic of the first Bragg reflection structure 165A can adjust the Bragg reflection structure (for example, material, thickness) according to the wavelength of the beam, so that the reflectance of the first Bragg reflection structure 165A is higher than that of the general metal reflection layer for a specific wavelength. high. In addition, the main material of the first Bragg reflection structure 165A is a dielectric material, so that the insulation effect can be achieved.
在本揭露之一實施例中，該第二布拉格反射結構155係相對於該主動層151而設置於該第二區域131之該第二型半導體層16上，其材料可選自由SiO2、Zn2O3、ZnO、ITO、Si3N4、Al2O3、MgO、MgF2、TiO、TiO2、TiO、Ta2O5及ZrO2所組成之群組，以交互堆疊之方式形成。在本揭露之一實施例中，該第二布拉格反射結構155是由二氧化鈦層及二氧化矽層以交互堆疊之方式形成。不同於習知之金屬反射層會因為熱處理而導致金屬擴散或因金屬氧化造成反射率下降，該第二布拉格反射結構155主要成分係氧化物，故該第二布拉格反射結構155並無金屬擴散或因金屬氧化造成反射率下降之問題，因此第二布拉格反射結構155之材料穩定性較一般習知的金屬反射層要高。In an embodiment of the present disclosure, the second Bragg reflection structure 155 is disposed on the second type semiconductor layer 16 of the second region 131 with respect to the active layer 151, and the material thereof may be selected from SiO2 and Zn2O3. Groups of ZnO, ITO, Si3N4, Al2O3, MgO, MgF2, TiO, TiO2, TiO, Ta2O5 and ZrO2 are formed by alternate stacking. In an embodiment of the present disclosure, the second Bragg reflection structure 155 is formed by alternately stacking a titanium dioxide layer and a ruthenium dioxide layer. Unlike the conventional metal reflective layer, which may cause metal diffusion due to heat treatment or a decrease in reflectance due to metal oxidation, the second Bragg reflection structure 155 is mainly composed of an oxide, so that the second Bragg reflection structure 155 has no metal diffusion or cause. Metal oxidation causes a problem of a decrease in reflectance, and therefore the material stability of the second Bragg reflection structure 155 is higher than that of a conventional metal reflective layer.
再者，第二布拉格反射結構155的反射特性可依光束波長進行調整布拉格反射結構(例如材料、厚度)，因此針對特定波長，第二布拉格反射結構155的反射率要比一般金屬反射層要高。此外，該第二布拉格反射結構155主要的材料皆為介電質材料，因此其可達到較佳之絕緣效果，作為電流阻障結構。參照圖1所示之實施例中，該第二電極17(例如P型電極)設置於該第二布拉格反射結構155上，該第一電極19A(例如N型電極)設置於該第一區域133之第一布拉格反射結構165A上且電性連接該第一區域133之第一型半導體層13。Furthermore, the reflection characteristic of the second Bragg reflection structure 155 can adjust the Bragg reflection structure (for example, material, thickness) according to the wavelength of the beam, so that the reflectance of the second Bragg reflection structure 155 is higher than that of the general metal reflection layer for a specific wavelength. . In addition, the main material of the second Bragg reflection structure 155 is a dielectric material, so that it can achieve a better insulation effect as a current blocking structure. Referring to the embodiment shown in FIG. 1 , the second electrode 17 (eg, a P-type electrode) is disposed on the second Bragg reflection structure 155 , and the first electrode 19A (eg, an N-type electrode) is disposed on the first region 133 . The first Bragg reflection structure 165A is electrically connected to the first type semiconductor layer 13 of the first region 133.
在圖1所示之實施例中，該發光元件結構10進一步包含一導電層31，設置於該第二電極17與該第二布拉格反射結構155之間。具體而言，該導電層31係覆蓋於該第二布拉格反射結構155並部分設置於該第二型半導體層16上。該導電層31之材料可為氧化鋅、氧化銦錫、氧化鎘錫或氧化銻錫。由於該第二電極17(例如P型電極)的電流可經由該導電層31、該第二型半導體層16、該主動層151及第一半導體層13至第一電極19A(例如N型電極)。在本揭露之一實施例中，該第二電極及該第一電極之材料相同，可藉由相同製程予以製備。In the embodiment shown in FIG. 1, the light emitting device structure 10 further includes a conductive layer 31 disposed between the second electrode 17 and the second Bragg reflector structure 155. Specifically, the conductive layer 31 covers the second Bragg reflection structure 155 and is partially disposed on the second semiconductor layer 16. The material of the conductive layer 31 may be zinc oxide, indium tin oxide, cadmium tin oxide or antimony tin oxide. Since the current of the second electrode 17 (for example, a P-type electrode) can pass through the conductive layer 31, the second-type semiconductor layer 16, the active layer 151, and the first semiconductor layer 13 to the first electrode 19A (for example, an N-type electrode) . In an embodiment of the present disclosure, the second electrode and the first electrode are made of the same material and can be prepared by the same process.
參照圖1所示，該第二電極17與該第二布拉格反射結構155的分佈範圍相互對應(例如，該第二布拉格反射結構155係設置於該第二電極17之正下方)，因此電流流經該導電層31時，由於該第二布拉格反射結構155的絕緣阻障效果而使得電極電流擴散至該第二布拉格反射結構155外側之該第二型半導體層16。該第一電極19A(例如N型電極)則覆蓋該第一布拉格反射結構165A；申言之，除了該第一布拉格反射結構165A與該第二型半導體層16接觸的一面外，該第一布拉格反射結構165A之其餘各面皆由該第一電極19A所覆蓋。在本揭露之一實施例中，設置於該第二型半導體16上之該第一布拉格反射結構165A可將光束進行反射。在本揭露之一實施例中，該第一電極19A係電性連接至該第一區域133之該第一型半導體層13。Referring to FIG. 1, the distribution range of the second electrode 17 and the second Bragg reflection structure 155 corresponds to each other (for example, the second Bragg reflection structure 155 is disposed directly under the second electrode 17), so current flow When passing through the conductive layer 31, the electrode current is diffused to the second type semiconductor layer 16 outside the second Bragg reflection structure 155 due to the insulating barrier effect of the second Bragg reflection structure 155. The first electrode 19A (eg, an N-type electrode) covers the first Bragg reflection structure 165A; in other words, the first Prague is except for the side of the first Bragg reflection structure 165A that is in contact with the second-type semiconductor layer 16. The remaining faces of the reflective structure 165A are covered by the first electrode 19A. In an embodiment of the present disclosure, the first Bragg reflection structure 165A disposed on the second type semiconductor 16 can reflect the light beam. In one embodiment of the present disclosure, the first electrode 19A is electrically connected to the first type semiconductor layer 13 of the first region 133.
圖2顯示本揭露另一實施例之發光元件結構10B之剖示圖。本揭露之該發光元件結構10B之該第一布拉格反射結構165B覆蓋該第一區域133之第二型半導體層16、該主動層151及該第一型半導體層13，亦即該第一布拉格反射結構165B覆蓋該第二型半導體層16之側壁及上方，該第一電極19B覆蓋該第一布拉格反射結構165B。藉由上述設計，該第一布拉格反射結構165B所能反射的光束，即可明顯增加。此外，為了調適該基板11與該第一型半導體層13之晶格差異，該發光元件結構10B另包含一緩衝層41，例如非摻雜氮化鎵層、氮化鋁層。2 is a cross-sectional view showing a light emitting element structure 10B of another embodiment of the present disclosure. The first Bragg reflection structure 165B of the light-emitting device structure 10B of the present disclosure covers the second-type semiconductor layer 16, the active layer 151 and the first-type semiconductor layer 13 of the first region 133, that is, the first Bragg reflection The structure 165B covers the sidewalls and the upper surface of the second type semiconductor layer 16, and the first electrode 19B covers the first Bragg reflection structure 165B. With the above design, the light beam that can be reflected by the first Bragg reflection structure 165B can be significantly increased. In addition, in order to adjust the lattice difference between the substrate 11 and the first type semiconductor layer 13, the light emitting element structure 10B further includes a buffer layer 41, such as an undoped gallium nitride layer or an aluminum nitride layer.
圖3顯示本揭露另一實施例之發光元件結構10C之剖示圖。該發光元件結構10之該第一布拉格反射結構165C局部覆蓋該第一區域133之第二型半導體層16、該主動層151及該第一型半導體層13靠近該間隙21之一側壁，該第一電極19C覆蓋設置於該第一區域133之第二型半導體層16、該主動層151及該第一型半導體層13遠離該間隙21之另一側壁。藉由此一設計，可進一步增加光束於該間隙21區域的光反射效率，進而提升光取出效率。FIG. 3 is a cross-sectional view showing a light emitting element structure 10C of another embodiment of the present disclosure. The first Bragg reflector structure 165C of the light emitting device structure 10 partially covers the second type semiconductor layer 16 of the first region 133, the active layer 151 and the first type semiconductor layer 13 are adjacent to one sidewall of the gap 21, the first An electrode 19C covers the second type semiconductor layer 16 disposed on the first region 133, the active layer 151, and the other side wall of the first type semiconductor layer 13 away from the gap 21. With this design, the light reflection efficiency of the light beam in the region of the gap 21 can be further increased, thereby improving the light extraction efficiency.
本揭露之技術內容及技術特點已揭示如上，然而本揭露所屬技術領域中具有通常知識者應瞭解，在不背離後附申請專利範圍所界定之本揭露精神和範圍內，本揭露之教示及揭示可作種種之替換及修飾。例如，上文揭示之許多製程可以不同之方法實施或以其它製程予以取代，或者採用上述二種方式之組合。The technical content and the technical features of the present disclosure have been disclosed as above, but those skilled in the art should understand that the teachings and disclosures of the present disclosure are disclosed without departing from the spirit and scope of the disclosure as defined by the appended claims. Can be used for various substitutions and modifications. For example, many of the processes disclosed above may be implemented in different ways or in other processes, or a combination of the two.
此外，本案之權利範圍並不侷限於上文揭示之特定實施例的製程、機台、製造、物質之成份、裝置、方法或步驟。本揭露所屬技術領域中具有通常知識者應瞭解，基於本揭露教示及揭示製程、機台、製造、物質之成份、裝置、方法或步驟，無論現在已存在或日後開發者，其與本案實施例揭示者係以實質相同的方式執行實質相同的功能，而達到實質相同的結果，亦可使用於本揭露。因此，以下之申請專利範圍係用以涵蓋用以此類製程、機台、製造、物質之成份、裝置、方法或步驟。Moreover, the scope of the present invention is not limited to the particular process, machine, manufacture, composition, means, method or method of the particular embodiments disclosed. It should be understood by those of ordinary skill in the art that, based on the teachings of the present disclosure, the process, the machine, the manufacture, the composition of the material, the device, the method, or the steps, whether present or future developers, The revealer performs substantially the same function in substantially the same manner, and achieves substantially the same result, and can also be used in the present disclosure. Accordingly, the scope of the following claims is intended to cover such <RTIgt; </ RTI> processes, machines, manufactures, compositions, devices, methods or steps.
10A．．．發光元件結構10A. . . Light-emitting element structure
10B．．．發光元件結構10B. . . Light-emitting element structure
10C．．．發光元件結構10C. . . Light-emitting element structure
11．．．基板11. . . Substrate
13．．．第一型半導體層13. . . First type semiconductor layer
131．．．第二區域131. . . Second area
133．．．第一區域133. . . First area
151．．．主動層151. . . Active layer
155．．．第二布拉格反射結構155. . . Second Bragg reflection structure
16．．．第二型半導體層16. . . Second type semiconductor layer
16A．．．第一上表面16A. . . First upper surface
16B．．．第二上表面16B. . . Second upper surface
165A．．．第一布拉格反射結構165A. . . First Bragg reflection structure
165B．．．第一布拉格反射結構165B. . . First Bragg reflection structure
165C．．．第一布拉格反射結構165C. . . First Bragg reflection structure
17．．．第二電極17. . . Second electrode
19A．．．第一電極19A. . . First electrode
19B．．．第一電極19B. . . First electrode
19C．．．第一電極19C. . . First electrode
21．．．間隙twenty one. . . gap
31．．．導電層31. . . Conductive layer
41．．．緩衝層41. . . The buffer layer
圖1顯示本揭露一實施例之發光元件結構之剖示圖；1 is a cross-sectional view showing the structure of a light-emitting element according to an embodiment of the present disclosure;
圖2顯示本揭露另一實施例之發光元件結構之剖示圖；以及2 is a cross-sectional view showing the structure of a light-emitting element according to another embodiment of the present disclosure;
圖3顯示本揭露另一實施例之發光元件結構之剖示圖。Fig. 3 is a cross-sectional view showing the structure of a light-emitting element according to another embodiment of the present disclosure.
10C．．．發光元件結構10C. . . Light-emitting element structure
11．．．基板11. . . Substrate
13．．．第一型半導體層13. . . First type semiconductor layer
131．．．第二區域131. . . Second area
133．．．第一區域133. . . First area
151．．．主動層151. . . Active layer
155．．．第二布拉格反射結構155. . . Second Bragg reflection structure
16．．．第二型半導體層16. . . Second type semiconductor layer
165C．．．第一布拉格反射結構165C. . . First Bragg reflection structure
17．．．第二電極17. . . Second electrode
19C．．．第一電極19C. . . First electrode
21．．．間隙twenty one. . . gap
31．．．導電層31. . . Conductive layer
41．．．非摻雜層41. . . Undoped layer
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| TW200924228A (en) * | 2007-11-23 | 2009-06-01 | Ind Tech Res Inst | Polarized light emitting device |
| TW201027811A (en) * | 2009-01-12 | 2010-07-16 | Ubilux Optoelectronics Corp | LED and its manufacturing method |
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| TWM350824U (en) * | 2008-01-08 | 2009-02-11 | Super Nova Optoelectronics Corp | LED structure of GaN family |
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