TWI498888B - Perpendicularly magnetized magnetic tunnel junction device - Google Patents

Description

Vertical magnetization spin magnetic memory element

The present invention relates to a perpendicular magnetization spin magnetic memory element, and more particularly to a perpendicular magnetization spin magnetic memory element having a composite layer.

The perpendicular magnetization (PMA) spin magnetic memory has the advantages of scalability, low power consumption, high performance and high reliability, and has the opportunity to become the mainstream technology of the next generation of new non-volatile memory. However, in order to increase the magnetoresistance change rate of the element and reduce the write current, the free layer must still be dominated by a film of perpendicular magnetization of CoFeB or CoFe, but its equivalent magnetic anisotropy coefficient (K _eff ) is low. Moreover, the thickness is very thin, so the thermal stability is low, and it is insufficient to become a non-volatile memory.

The present invention provides a perpendicular magnetization spin magnetic memory element that can maintain high magnetic resistance (MR) and low write current, but can improve the thermal stability of the element.

The present invention provides a perpendicular magnetization spin magnetic memory element comprising at least one composite layer comprising a first metal oxide layer, a first ferromagnetic layer, a first modified layer and a second ferromagnetic layer. The first ferromagnetic layer is on the first metal oxide layer. The second ferromagnetic layer is on the first ferromagnetic layer. The first modifying layer is located between the first ferromagnetic layer and the second ferromagnetic layer.

According to an embodiment of the invention, the first ferromagnetic layer and the second ferromagnetic layer respectively have a dopant, and the first modifying layer can absorb a portion of the dopant.

According to an embodiment of the invention, the dopant comprises boron.

According to an embodiment of the invention, the material of the first modifying layer comprises Ta, Ti, Hf, Nb, V or Zr, or an alloy thereof.

According to an embodiment of the invention, the first modifying layer is a single continuous layer, a plurality of consecutive layers, a discontinuous layer, a plurality of particles, a plurality of agglomerates, or a combination thereof.

According to an embodiment of the invention, the materials of the first ferromagnetic layer and the second ferromagnetic layer respectively comprise FeB, CoFeB, CoFeSiB or a combination thereof.

According to an embodiment of the invention, the material of the first metal oxide layer comprises magnesium oxide, aluminum oxide, cerium oxide, titanium oxide, zinc oxide or a combination thereof.

According to an embodiment of the invention, the composite layer is a free layer.

According to an embodiment of the invention, the free layer comprises two or more of the above composite layers.

According to an embodiment of the invention, the perpendicular magnetization spin magnetic memory element further includes a second modification layer and a third ferromagnetic layer. The second finishing layer is located below the lowermost composite layer. The third ferromagnetic layer is located between the first metal oxide layer and the second modification layer.

According to an embodiment of the invention, the perpendicular magnetization spin magnetic memory element further includes a second modification layer and a third ferromagnetic layer. Second modification layer Located below the first metal oxide layer. The third ferromagnetic layer is located between the first metal oxide layer and the second modification layer.

According to an embodiment of the present invention, the perpendicular magnetization spin magnetic memory device further includes a tunneling dielectric layer and a fixed layer, and the tunneling dielectric layer includes a second metal oxide layer on the composite layer. The fixing layer is located on the tunneling dielectric layer, wherein a resistance area product (RA) of the second metal oxide layer is greater than RA of the first metal layer.

According to an embodiment of the present invention, the perpendicular magnetization spin magnetic memory device, wherein the first metal oxide layer is a tunneling dielectric layer, the first ferromagnetic layer, the first modifying layer, and the second iron The magnetic layer is a free layer, and further includes a fixed layer and a top cover layer, wherein the fixed layer is in contact with the first metal oxide layer, and the top cover layer is located on the second ferromagnetic layer, and the material comprises a second metal oxide And a layer of RA of the first metal oxide layer is larger than RA of the second metal layer.

Based on the above, the perpendicular magnetization spin magnetic memory element of the present invention can maintain high magnetic resistance (MR) and low write current, and can improve the thermal stability of the element.

The above described features and advantages of the present invention will be more apparent from the following description.

1A is a cross section of a composite layer according to an embodiment of the invention. Schematic, wherein the first modifying layer is a single continuous layer.

Referring to FIG. 1A, the composite layer 8 of the present invention includes a first metal oxide layer 10, a first ferromagnetic layer 12, a first modifying layer 14, and a second ferromagnetic layer 16.

The material of the first metal oxide layer 10 includes a metal oxide such as magnesium oxide, aluminum oxide, cerium oxide, titanium oxide, zinc oxide or a combination thereof. The thickness of the first metal oxide layer 10 is, for example, 7 angstroms to 9 angstroms.

The first ferromagnetic layer 12 is on the first metal oxide layer 10. The first ferromagnetic layer 12 is a perpendicular magnetization material having a dopant such as boron, but is not limited thereto. The material of the first ferromagnetic layer 12 is, for example, FeB, CoFeB, CoFeSiB or a combination thereof. The thickness of the first ferromagnetic layer 12 is, for example, 7 angstroms to 13 angstroms.

The second ferromagnetic layer 16 is located above the first ferromagnetic layer 12. The second ferromagnetic layer 16 is a perpendicular magnetization material having a dopant such as boron, but is not limited thereto. The material of the second ferromagnetic layer 16 is, for example, FeB, CoFeB, CoFeSiB or a combination thereof. The material of the second ferromagnetic layer 16 may be the same as or different from the material of the first ferromagnetic layer 12. The thickness of the second ferromagnetic layer 16 is, for example, 7 angstroms to 13 angstroms.

The first modifying layer 14 is sandwiched between the first ferromagnetic layer 12 and the second ferromagnetic layer 16. The first modifying layer 14 (particularly during annealing) may absorb dopants within the first ferromagnetic layer 12 or/and the second ferromagnetic layer 16 to enhance the first ferromagnetic layer 12 or/and the second iron The crystallinity of the magnetic layer 16 increases the rate of change of magnetoresistance. And the first modifying layer 14 can increase the interface between the first ferromagnetic layer 12 and the first metal oxide layer 10 or/and the second ferromagnetic layer 16 and other metal oxide layers (for example, the top cover layer 18 or the following embodiments) The perpendicular magnetic anisotropy energy of the interface of the tunnel dielectric layer 20). In addition, the first modifying layer 14 can also serve as a wetting layer to increase the film layer of the second ferromagnetic layer 16 above it. Continuity, the continuity of the film is superior to the continuity of the ferromagnetic layer formed directly on the metal oxide.

In one embodiment, the material of the first ferromagnetic layer 12 and the second ferromagnetic layer 16 has a boron dopant, and the first modification layer 14 is a material that can absorb boron. However, the dopant which the first modification layer 14 of the present invention can absorb is not limited to boron, and any of the dopants in the first ferromagnetic layer 12 and the second ferromagnetic layer 16 can be absorbed to enhance the first ferromagnetic layer 12. Or / and the crystallinity of the second ferromagnetic layer 16 to increase the rate of change of magnetoresistance with the first ferromagnetic layer 12 and the adjacent metal oxide interface or / and the second ferromagnetic layer 16 and the adjacent metal oxide The perpendicular magnetic anisotropy of the interface is within the scope of the present invention. The material of the first modifying layer 14 includes a metal or a metal alloy such as a heat resistant metal such as Ta, Ti, Hf, Nb, V or Zr, or a combination thereof, or an alloy thereof. The thickness of the first modifying layer 14 is less than or equal to 5 angstroms. In an embodiment, the thickness of the first modifying layer 14 is, for example, 1.5 angstroms to 5 angstroms. If the thickness of the first modifying layer 14 is too thick, decoupling is caused. The first modifying layer 14 can be a single continuous layer (Fig. 1A), a multilayer continuous layer (Fig. 1B), a discontinuous layer (Fig. 1C), a plurality of particles (Fig. 1D), a cluster of clusters (Fig. 1D), Or a combination of the foregoing various types, however, the invention is not limited thereto, and the first modification layer 14 may be of any type capable of absorbing the dopant characteristics of the first ferromagnetic layer 12 and the second ferromagnetic layer 16. By.

The above composite layer 8 can be applied to a perpendicular magnetization spin magnetic memory element as a free layer. The composite layer 8 described above is applied to a perpendicular magnetization spin magnetic memory element, which may be partially used as a free layer or all as a free layer.

The above composite layer 8 is applied to a perpendicular magnetization spin magnetic memory element, and a part of which is a free layer is described below in conjunction with FIG.

2 is a cross-sectional view of a perpendicular magnetized spin magnetic memory device in accordance with an embodiment of the invention.

Referring to FIG. 2, in an embodiment, the perpendicular magnetization spin magnetic memory element includes a fixed layer 6, the above composite layer 8, and a cap layer 18. The pinned layer 6 (or reference layer) is below the first metal oxide layer 10 of the above composite layer 8. The pinned layer 6 may be any perpendicular magnetization material such as a CoFeB single layer film, a Co/Pt multilayer film, a Co/Pd multilayer film, a Co/Ni multilayer film, a CoPd alloy film, a FePt alloy film, or a combination of the above material laminates.

The first metal oxide layer 10 serves as a tunneling dielectric layer. The first ferromagnetic layer 12, the first modifying layer 14, and the second ferromagnetic layer 16 serve as a free layer. A cap layer 18 is located on the composite layer 8 described above. The material of the cap layer 18 includes a second metal oxide such as magnesium oxide, aluminum oxide, cerium oxide, titanium oxide, zinc oxide or a combination thereof. The RA of the first metal oxide layer 10 is greater than the RA of the second metal oxide of the cap layer 18 such that the first metal oxide layer 10 as a tunneling dielectric layer dominates the rate of change of magnetoresistance. An embodiment in which the RA of the first metal oxide layer 10 is greater than the RA of the second metal oxide of the cap layer 18 may be achieved by the thickness of the first metal oxide layer 10 being greater than the thickness of the cap layer 18. Wherein RA is a resistance area product (RA) of the second metal oxide layer.

An embodiment in which all of the above composite layer 8 is applied to a perpendicular magnetization spin magnetic memory element as a free layer will be described below with reference to FIG.

3 is another perpendicular magnetization spin according to an embodiment of the invention A schematic cross-sectional view of a magnetic memory element.

When all of the above composite layer 8 is used as a free layer, the free layer may include a single composite layer structure as described above, or may include two (as shown in FIG. 3), or a plurality of the above composite layer structures, which may be represented as including (The above composite layer 8) _n , where n represents 1 or an integer greater than 1. One or more composite layer structures may construct an interface between a plurality of ferromagnetic layers and a metal oxide to increase element stability.

Referring to FIG. 3, in one embodiment, the perpendicular magnetization spin magnetic memory device includes more than one of the composite layers 8 (the perpendicular magnetization spin magnetic memory device of FIG. 3 includes two composite layers 8), tunneling Electrical layer 20 and fixed layer 22, the perpendicular magnetized spin magnetic memory element can be represented as including (the above composite layer 8) _n / tunneling dielectric layer 20 / fixed layer 22, where n represents greater than 1 (corresponding to Figure 3 Where n is an integer of 2). The first metal oxide layer 10 of the above composite layer 8 is a seed layer. The first ferromagnetic layer 12, the first modifying layer 14 and the second ferromagnetic layer 16 serve as a free layer. The tunneling dielectric layer 20 is located on the composite layer 8 and is made of a second metal oxide layer, such as magnesium oxide, aluminum oxide, hafnium oxide, titanium oxide, zinc oxide or a combination thereof. The Ra of the second metal oxide layer of the tunneling dielectric layer 20 is greater than the RA of the first metal layer such that the tunneling dielectric layer 20 dominates the rate of change of magnetoresistance. For example, the manner in which the RA of the second metal oxide layer of the tunneling dielectric layer 20 is greater than the RA of the first metal layer may be such that the thickness of the second metal oxide layer of the tunneling dielectric layer 20 is greater than The thickness of the first metal oxide layer 10 of the seed layer is implemented. The pinned layer 22 is located on the tunneling dielectric layer 20, which may be any perpendicular magnetization material, such as a CoFeB single layer film, a Co/Pt multilayer film, a Co/Pd multilayer film, a Co/Ni multilayer film, a CoPd alloy film, a FePt alloy. A film, or a combination of the above material laminates.

The above composite layer 8 can be applied to a perpendicular magnetization spin magnetic memory element, all of which can be used as a partial free layer, and an embodiment thereof will be described below with reference to FIG.

4 is a cross-sectional view showing still another perpendicular magnetization spin magnetic memory device according to an embodiment of the invention.

Referring to FIG. 4, in another embodiment, the free layer of the perpendicular magnetization spin magnetic memory element includes a second modification layer 24 and a third ferromagnetic layer 26 in addition to the composite layer 8 described above. That is, the structure of the perpendicular magnetization spin magnetic memory element can be represented as including the second modification layer 24 / the third ferromagnetic layer 26 / (the above composite layer 8) _n / tunneling dielectric layer 20 / fixed layer 22.

The second finishing layer 24 is located below the one or more composite layers 8 (only one of the figures). The third ferromagnetic layer 26 is located between the first metal oxide layer 10 and the second modification layer 24 at the lowest of the plurality of composite layers 8. The third ferromagnetic layer 26 has a dopant, such as boron, but is not limited thereto. The material of the third ferromagnetic layer 26 is, for example, FeB, CoFeB, CoFeSiB or a combination thereof. The material of the third ferromagnetic layer 26 may be the same as or different from the materials of the first ferromagnetic layer 12 and the second ferromagnetic layer 16, respectively.

The second modifying layer 24 (particularly during annealing) can absorb the dopants in the third ferromagnetic layer 26 to increase the crystallinity of the third ferromagnetic layer 26, increase the rate of change of magnetoresistance, and the third ferromagnetic layer 26 The perpendicular magnetic anisotropy energy at the interface with the first metal oxide layer 10. In one embodiment, the material of the third ferromagnetic layer 26 has a boron dopant, and the second modification layer 24 is a material that can absorb boron. Of course However, the doping of the first modifying layer 14 of the present invention is not limited to boron, and any dopant in the third ferromagnetic layer 26 can be absorbed to increase the crystallinity of the third ferromagnetic layer 26 to increase the magnetic The rate of change of resistance and the perpendicular magnetic anisotropy of the interface between the third ferromagnetic layer 26 and the first metal oxide layer 10 are within the scope of the present invention. The material of the second modification layer 24 includes a metal or a metal alloy such as a heat resistant metal such as Ta, Ti, Hf, Nb, V or Zr, or a combination thereof, or an alloy thereof. The thickness of the second decorative layer 24 is, for example, 2 angstroms to 50 angstroms. As described above for the first modifying layer 14, the second modifying layer 24 may be a single continuous layer, a plurality of continuous layers, a discontinuous layer, a plurality of particles, agglomerates, or a combination of the foregoing various forms, however, the present invention does not This is limited to this.

In addition, in addition to absorbing the dopant in the third ferromagnetic layer 26, the second modifying layer 24 can also serve as a wetting layer to increase the continuity of the film layer of the third ferromagnetic layer 26 above it.

The structure of the perpendicular magnetization spin magnetic memory element of the present invention can construct an interface between a plurality of ferromagnetic layers and a metal oxide to increase the perpendicular magnetic anisotropy energy.

In one embodiment, the perpendicular magnetized spin magnetic memory element of the present invention comprises a MgO/CoFeB/M/CoFeB/MgO structure, primarily by inserting a modifying layer M into CoFeB within the dual MgO. The function and characteristics of the modified layer M are that boron can absorb CoFeB during the annealing process, and the crystallinity of CoFeB is increased to increase the rate of change of magnetoresistance and the perpendicular magnetic anisotropy energy of the interface between CoFeB and MgO. In addition, the modification layer M can also be used as a wetting layer, so that the continuity of the CoFeB film on the modification layer M is superior to the continuity of the CoFeB film on the MgO.

In an exemplary embodiment, the perpendicular magnetization spin magnetic memory device of the present invention comprises 6 angstroms of MgO layer / 10 angstroms CoFeB / 3 angstroms of Ta layer / 8 angstroms of CoFeB layer / 9 angstroms of MgO layer / 30 angstroms of Ru layer / 100 angstroms The stacked layer composed of the Ta layers has an equivalent magnetic anisotropy constant K _{eff of} about 1.4 × 10 ⁶ erg / cm ³ .

In another exemplary embodiment, the perpendicular magnetization spin magnetic memory element of the present invention comprises 30 angstroms of Ta layer / 8 angstroms of CoFeB layer / 6 angstroms of MgO layer / 10 angstroms of CoFeB / 3 angstroms of Ta layer / 8 angstroms of CoFeB layer / 9 A stacked layer composed of an Å MgO layer/30 Å Ru layer/100 Å Ta layer has a K _{eff of} about 2.4×10 ⁶ erg/cm ³ .

Example 1-4

A 30 angstrom Ta layer/9 angstrom MgO layer/10 angstrom CoFeB layer/2 angstrom Ta layer/8 angstrom CoFeB layer/9 angstrom MgO layer/30 angstroms Ru/600 angstroms Ta was sequentially formed to fabricate the stacked structure of Example 1. Example 2-4 A stack structure was fabricated in the same manner as in Example 1, except that the Ta layers were formed to have different thicknesses (3 angstroms, 4 angstroms, 5 angstroms). The hysteresis curves of the vertical film faces of Examples 1 to 4 are shown in Fig. 5A, and the hysteresis curves of the horizontal film faces are shown in Fig. 5B, and the equivalent magnetic anisotropy coefficients of the Ta layers of various thicknesses are shown in Fig. 5C. .

Comparative Example 1-4

The stacked structure was fabricated in the same manner as in Example 1, except that a 10 angstrom CoFeB layer/3 angstrom Ta layer/8 angstrom CoFeB layer was replaced with a CoFeB layer of various thicknesses (8 angstroms, 10 angstroms, 12 angstroms, 14 angstroms). The hysteresis curves of the vertical film plane directions of the stacked structures of Comparative Examples 1-4 are shown in Fig. 6A. The hysteresis curve of the horizontal film surface direction measured by the stack structure of Comparative Example 1 at 0 degrees and 90 degrees is shown in Fig. 6B. Shown.

The results of FIGS. 5A, 5B, and 5C show that the structure of Example 1-4 exhibits PMA characteristics, and therefore, by inserting Ta in the middle of CoFeB, the thickness of CoFeB can be raised to 18 Å.

From the results of FIGS. 6A and 6B, it is shown that Comparative Example 1-4 has a CoFeB/MgO interface, but the stack structure of CoFeB layers of various thicknesses cannot exhibit perpendicular magnetic anisotropy PMA characteristics; above 10 angstroms is horizontal magnetic anisotropy ( IMA); 8 angstroms exhibit superparamagnetic properties, so it is speculated that boron may not diffuse easily with CoFeB, thus affecting the vertical anisotropy energy of CoFeB/MgO interface, and may also be discontinuous with CoFeB on MgO. Related to agglomerates.

From the results of Examples 1-4 and Comparative Examples 1-4, it is known that the thickness of the conventional CoFeB (about 12 angstroms) can be improved by the adhesion of the Ta layer (the dopant absorption layer) in the CoFeB. The layer of CoFeB is about 1.5 times.

In addition, the Ms of the stacked structure in which Ta is inserted in CoFeB is higher than the CoFeB in which Ta is not inserted, and the Ms of the former can reach about 1570 emu/cm ³ , and the latter is 1240 emu/cm ³ , so the Ta layer can absorb boron of CoFeB. The crystallinity of CoFeB is improved, thereby increasing the vertical anisotropy energy of the CoFeB/MgO interface.

Example 5

Form 30 Å Ta layer / 11.5 Å MgO layer / 11 to 17 angstrom CoFeB layer / 3 angstrom Ta layer / 8 to 14 angstrom CoFeB layer / 11.5 angstrom MgO layer / cap layer (30 Å Ru / 100 angstroms Ta) to make a stacked structure, the Ki, Kv and demagnetization energy are shown in Table 1.

Comparative Example 5

A 30 angstrom Ta layer/8 to 20 angstrom CoFeB layer 11.5 angstrom MgO layer/top cap layer (30 angstroms Ru/100 angstroms Ta) was sequentially formed to form a stacked structure, and Ki, Kv and demagnetization energy thereof are shown in Table 1. .

Comparative Example 6

A 30 angstrom Ta layer/11.5 angstrom MgO layer/10 to 22 angstrom CoFeB layer/11.5 angstrom MgO layer/top cap layer (30 angstroms Ru/100 angstroms Ta) was sequentially formed to fabricate a stack structure, Ki, Kv, and demagnetization. Can be as shown in Table 1.

The equivalent anisotropy coefficient is defined as follows: K _eff = Kv - 2πMs ² + Ki / t

Wherein: K _eff is the equivalent magnetic anisotropy coefficient; Kv is the volume anisotropy coefficient; of Ki interfacial anisotropy coefficient; of Ms is a saturation magnetization amount; t is the equivalent thickness of the magnetic layer.

From the results of Table 1, it is shown that the Ki of Example 5 is larger and the Kv is smaller than that of Comparative Example 5, so that the thickness of the free layer of PMA can be increased, and the thermal stability and retention of the element can be improved. Compared with Comparative Example 6, the demagnetization energy of Example 5 was changed from -0.99 mJ/m ³ to -1.55 mJ/m ³ , indicating that the crystallinity of Example 5 was high and had a large magnetoresistance change rate.

In summary, the composite layer structure of the present invention comprises a ferromagnetic layer and a modified layer is inserted therein. The modified layer can absorb the dopant in the ferromagnetic layer during the annealing process, improve the crystallinity of the ferromagnetic layer, and increase the rate of change of magnetoresistance. And the perpendicular magnetic anisotropy energy of the interface between the ferromagnetic layer and the metal oxide layer, and can increase the total thickness of the ferromagnetic layer (free layer), thereby increasing the magnetic inversion energy barrier (Eb), and the thermal stability and retention of the component improve.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the invention, and any one of ordinary skill in the art can make some modifications and refinements without departing from the spirit and scope of the invention. The scope of the invention is defined by the scope of the appended claims.

6, 22‧‧‧ fixed layer

8‧‧‧Composite layer

10‧‧‧First metal oxide layer

12‧‧‧First Ferromagnetic Layer

14‧‧‧First finishing layer

16‧‧‧Second ferromagnetic layer

18‧‧‧Top cover

20‧‧‧Tunnel dielectric layer

24‧‧‧Second modification

26‧‧‧ Third Ferromagnetic Layer

1A is a schematic cross-sectional view of a composite layer in which a first modified layer is a single continuous layer, in accordance with an embodiment of the invention.

1B is a schematic cross-sectional view of a composite layer in which a first modified layer is a multilayer continuous layer, in accordance with an embodiment of the invention.

1C is a schematic cross-sectional view of a composite layer in which a first modified layer is a discontinuous layer, in accordance with an embodiment of the invention.

1D is a schematic cross-sectional view of a composite layer in which a first modified layer is a plurality of particles, in accordance with an embodiment of the present invention.

1E is a schematic cross-sectional view of a composite layer according to an embodiment of the invention, wherein the first modified layer is agglomerates.

2 is a cross-sectional view of a perpendicular magnetized spin magnetic memory device in accordance with an embodiment of the invention.

3 is a cross-sectional view showing another perpendicular magnetization spin magnetic memory device according to an embodiment of the invention.

4 is a cross-sectional view showing still another perpendicular magnetization spin magnetic memory device according to an embodiment of the invention.

Fig. 5A is a hysteresis curve showing the vertical film plane direction of the stacked structure of Examples 1-4.

Fig. 5B is a hysteresis curve showing the parallel film plane direction of the stacked structure of Examples 1-4.

Fig. 5C is a graph showing the relationship between the thickness of the tantalum layer and the equivalent magnetic anisotropy coefficient (K _eff ) of the stacked structure of Examples 1-4.

Fig. 6A is a graph showing the hysteresis curve of the vertical film plane direction of the stacked structure of Comparative Examples 1-4.

6B is a graph showing the hysteresis curve of the stacked structure of Comparative Example 1 in the direction of parallel film planes of 0 degrees and 90 degrees.

8‧‧‧Composite layer

10‧‧‧First metal oxide layer

12‧‧‧First Ferromagnetic Layer

14‧‧‧First finishing layer

16‧‧‧Second ferromagnetic layer

Claims (12)

A perpendicular magnetization spin magnetic memory component comprising: at least one composite layer, each composite layer comprising: a first metal oxide layer; a first ferromagnetic layer on the first metal oxide layer; a ferromagnetic layer on the first ferromagnetic layer; and a first modifying layer between the first ferromagnetic layer and the second ferromagnetic layer, wherein the first ferromagnetic layer and the second iron The magnetic layer respectively has a dopant, and the first modification layer can absorb a portion of the dopants. The perpendicular magnetization spin magnetic memory element of claim 1, wherein the dopants comprise boron. The perpendicular magnetization spin magnetic memory element according to claim 1, wherein the material of the first modification layer comprises Ta, Ti, Hf, Nb, V or Zr, or an alloy thereof. The perpendicular magnetization spin magnetic memory device of claim 1, wherein the first modified layer is a single continuous layer, a plurality of consecutive layers, a discontinuous layer, a plurality of particles, a plurality of agglomerates, or the foregoing combination. The perpendicular magnetization spin magnetic memory device of claim 1, wherein the materials of the first ferromagnetic layer and the second ferromagnetic layer respectively comprise FeB, CoFeB, CoFeSiB or a combination thereof. The perpendicular magnetization spin magnetic memory device of claim 1, wherein the material of the first metal oxide layer comprises oxidation Magnesium, alumina, cerium oxide, titanium oxide, zinc oxide or a combination thereof. The perpendicular magnetization spin magnetic memory element of claim 1, wherein the composite layer is a free layer. The perpendicular magnetization spin magnetic memory element of claim 7, wherein the free layer comprises two or more of the above composite layers. The perpendicular magnetization spin magnetic memory component of claim 8, further comprising: a second modification layer located below the lowermost composite layer; and a third ferromagnetic layer located on the first metal Between the oxide layer and the second modifying layer. The perpendicular magnetization spin magnetic memory device of claim 7, further comprising: a second modification layer under the first metal oxide layer; and a third ferromagnetic layer located at the first Between the metal oxide layer and the second modifying layer. The perpendicular magnetization spin magnetic memory device of claim 7, further comprising a tunneling dielectric layer and a fixed layer, the tunneling dielectric layer comprising a second metal oxide layer located at the composite The fixed layer is located on the tunneling dielectric layer, and the product of the resistance and the area of the second metal oxide layer is greater than the product of the resistance and the area of the first metal layer. The perpendicular magnetization spin magnetic memory device of claim 1, wherein the first metal oxide layer is a tunneling dielectric layer, the first ferromagnetic layer, the first modifying layer, and the second The ferromagnetic layer is a free layer, and further includes a fixed layer and a cap layer, the pinned layer is located at the first metal Under and in contact with the oxide layer, the cap layer is located on the second ferromagnetic layer, and the material thereof comprises a second metal oxide layer, wherein the first metal oxide layer has a resistance and area product greater than the The product of the resistance and area of the second metal layer.