TWI495975B - Voltage regulator - Google Patents
Voltage regulator Download PDFInfo
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- TWI495975B TWI495975B TW099130880A TW99130880A TWI495975B TW I495975 B TWI495975 B TW I495975B TW 099130880 A TW099130880 A TW 099130880A TW 99130880 A TW99130880 A TW 99130880A TW I495975 B TWI495975 B TW I495975B
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
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- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is DC
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices
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Description
本發明是有關輸出端子被連接至備份電池的電壓調整器。The present invention relates to a voltage regulator in which an output terminal is connected to a backup battery.
就以往輸出端子被連接至備份電池112的電壓調整器而言,有圖11所示那樣的電路為人所知(例如參照專利文獻1)。A circuit as shown in FIG. 11 is known as a voltage regulator in which the output terminal is connected to the backup battery 112 (see, for example, Patent Document 1).
電源電壓是被施加於VDD端子121與VSS端子123端子間。輸出端子122是連接備份電池112,即使VDD端子121與VSS端子123間的電源電壓形成零,還是會對輸出端子122的負荷113(例如RAM)持續供給電壓。The power supply voltage is applied between the VDD terminal 121 and the VSS terminal 123 terminal. The output terminal 122 is connected to the backup battery 112, and even if the power supply voltage between the VDD terminal 121 and the VSS terminal 123 forms zero, the voltage 113 (for example, RAM) of the output terminal 122 is continuously supplied with a voltage.
當電源電壓被供給於VDD端子121與VSS端子123間時,若將其端子間電壓設為VBAT1,將備份電池的電壓設為VBAT2,則一般是VBAT1>VBAT2。當電源電壓被供給於VDD端子121與VSS端子123間時,Vref電路101是輸出某一定的電壓(Vref),錯誤放大器102係放大以電阻107(電阻值R1)及電阻108(電阻值R2)來分壓輸出端子122的電壓(VOUT)之電壓(R2/(R1+R2)×VOUT)與Vref的差電壓,而來控制Pch電晶體103的閘極,藉此輸出一定的電壓至輸出端子122。When the power supply voltage is supplied between the VDD terminal 121 and the VSS terminal 123, if the voltage between the terminals is VBAT1 and the voltage of the backup battery is VBAT2, VBAT1>VBAT2 is generally used. When the power supply voltage is supplied between the VDD terminal 121 and the VSS terminal 123, the Vref circuit 101 outputs a certain voltage (Vref), and the error amplifier 102 amplifies the resistor 107 (resistance value R1) and the resistor 108 (resistance value R2). The voltage of the voltage (VOUT) of the output terminal 122 (R2/(R1+R2)×VOUT) and the voltage difference of Vref are divided to control the gate of the Pch transistor 103, thereby outputting a certain voltage to the output terminal. 122.
比較器1105是將在電阻1101及電阻1102分壓VDD端子121與VSS端子123的端子間電壓之後的電壓連接至+輸入端子,且將在電阻1103及電阻1104分壓輸出端子122與VSS端子123的端子間電壓之後的電壓連接至-輸入端子,而來比較VDD端子121與輸出端子122的端子電壓。當電源電壓被供給於VDD端子121與VSS端子123間時,因為在電阻1101及電阻1102所被分壓的電壓要比在電阻1103及電阻1104所被分壓的電壓更高,所以比較器1105的輸出是成為“H”,Pch電晶體105為ON狀態,Pch電晶體106為OFF狀態,Pch電晶體103的基板(NWELL)電位是藉由Pch電晶體105而形成VDD端子121的電位。The comparator 1105 is connected to the + input terminal by dividing the voltage between the terminals of the VDD terminal 121 and the VSS terminal 123 by the resistor 1101 and the resistor 1102, and dividing the output terminal 122 and the VSS terminal 123 at the resistor 1103 and the resistor 1104. The voltage after the inter-terminal voltage is connected to the -input terminal to compare the terminal voltages of the VDD terminal 121 and the output terminal 122. When the power supply voltage is supplied between the VDD terminal 121 and the VSS terminal 123, since the voltage divided by the resistor 1101 and the resistor 1102 is higher than the voltage divided by the resistor 1103 and the resistor 1104, the comparator 1105 is used. The output is "H", the Pch transistor 105 is in an ON state, and the Pch transistor 106 is in an OFF state. The substrate (NWELL) potential of the Pch transistor 103 is a potential at which the VDD terminal 121 is formed by the Pch transistor 105.
另一方面,若VDD端子121與VSS端子123的端子間電壓比輸出端子122與VSS端子123的端子間電壓更降低,則比較器1105的輸出會成為“L”,Pch電晶體106為ON狀態,Pch電晶體105為OFF狀態,Pch電晶體的基板(NWELL)電位是藉由Pch電晶體106而形成輸出端子122的電位。On the other hand, when the voltage between the terminals of the VDD terminal 121 and the VSS terminal 123 is lower than the voltage between the terminals of the output terminal 122 and the VSS terminal 123, the output of the comparator 1105 becomes "L", and the Pch transistor 106 is turned on. The Pch transistor 105 is in an OFF state, and the substrate (NWELL) potential of the Pch transistor is a potential at which the output terminal 122 is formed by the Pch transistor 106.
亦即,藉由將Pch電晶體103的基板(NWELL)電位切換成VDD端子121側或輸出端子122側之電位高的側,即使VDD端子121的電壓比輸出端子122的電壓更下降,還是可防止電流從輸出端子122經由Pch電晶體103的基板間的寄生二極體來流至VDD端子121。In other words, by switching the potential of the substrate (NWELL) of the Pch transistor 103 to the side where the potential of the VDD terminal 121 side or the output terminal 122 side is high, even if the voltage of the VDD terminal 121 is lower than the voltage of the output terminal 122, it is still possible. The current is prevented from flowing from the output terminal 122 to the VDD terminal 121 via the parasitic diode between the substrates of the Pch transistor 103.
[專利文獻1]特開2001-51735號廣報[Patent Document 1] Special Report 2001-51735
然而,在以往的電壓調整器有:當VDD端子121側的電位形成零時,備份電池的電流會經由電阻1103與1104而流動,因此無法長時間備份動作的課題。However, in the conventional voltage regulator, when the potential on the VDD terminal 121 side is zero, the current of the backup battery flows through the resistors 1103 and 1104, so that the problem of the operation cannot be backed up for a long time.
又,有當VDD端子121側的電位形成零時,無法關閉Pch電晶體103,逆流電流流動的課題。Further, when the potential on the VDD terminal 121 side is zero, the Pch transistor 103 cannot be turned off, and the reverse current flows.
於是,本發明的目的是在於解決以往那樣的課題,以提供一種當VDD端子121側的電位形成零時,備份電池的消費電流少,且使Pch電晶體103關閉,而能夠確實地防止逆流電流之電壓調整器為目的。Accordingly, an object of the present invention is to solve the conventional problem and to provide a method in which when the potential on the VDD terminal 121 side is zero, the consumption current of the backup battery is small, and the Pch transistor 103 is turned off, and the reverse current can be surely prevented. The voltage regulator is for the purpose.
本發明是在電壓調整器的VDD端子121的電壓與輸出端子122的電壓之比較電路中未使用分壓電阻的電路構成,藉此削減流至分壓電阻的電流,解決上述課題者。The present invention is a circuit configuration in which a voltage dividing resistor is not used in a comparison circuit between the voltage of the VDD terminal 121 of the voltage regulator and the voltage of the output terminal 122, thereby reducing the current flowing to the voltage dividing resistor, thereby solving the above problems.
若根據以上那樣本發明的電壓調整器,則可以低消費電流,不拘VDD端子121的電壓大小,使防止從輸出端子122往VDD端子121的逆流。According to the voltage regulator of the present invention as described above, it is possible to reduce the current consumption and prevent the backflow from the output terminal 122 to the VDD terminal 121 regardless of the magnitude of the voltage of the VDD terminal 121.
參照圖面來說明有關用以實施本發明的形態。The form for carrying out the invention will be described with reference to the drawings.
圖1是表示本發明的第一實施例的電壓調整器的電路圖。本發明的電壓調整器是以Vref電路101、錯誤放大器102、比較電路130、電阻107、電阻108、Pch電晶體103、Pch電晶體104、Pch電晶體105、Pch電晶體106、Nch電晶體109、VDD端子121、VSS端子123、輸出端子122所構成。與圖11的不同是在於比較器1105與電阻1101、1102、1103、1104被削除,藉由比較電路130來控制Pch電晶體105與106及所被追加的Pch電晶體104。Fig. 1 is a circuit diagram showing a voltage regulator of a first embodiment of the present invention. The voltage regulator of the present invention is a Vref circuit 101, an error amplifier 102, a comparison circuit 130, a resistor 107, a resistor 108, a Pch transistor 103, a Pch transistor 104, a Pch transistor 105, a Pch transistor 106, and an Nch transistor 109. The VDD terminal 121, the VSS terminal 123, and the output terminal 122 are formed. The difference from FIG. 11 is that the comparator 1105 and the resistors 1101, 1102, 1103, and 1104 are removed, and the Pch transistors 105 and 106 and the added Pch transistor 104 are controlled by the comparison circuit 130.
圖2是表示本發明的比較電路。Fig. 2 is a view showing a comparison circuit of the present invention.
比較電路130是以定電流電路203、定電流電路204、Pch電晶體201、Pch電晶體202、反相器(Inverter)205、反相器206、反相器208、位準移位器207所構成。The comparison circuit 130 is a constant current circuit 203, a constant current circuit 204, a Pch transistor 201, a Pch transistor 202, an inverter 205, an inverter 206, an inverter 208, and a level shifter 207. Composition.
說明有關本發明的電壓調整器的連接。Vref電路的輸出是被連接至錯誤放大器102的反轉輸入端子。錯誤放大器102的非反轉輸入端子是被連接至電阻107與電阻108的連接點,輸出是被連接至Pch電晶體103的閘極與Pch電晶體104的源極。Pch電晶體103的源極是被連接至VDD端子121與Pch電晶體105的汲極,汲極是被連接至輸出端子122與Pch電晶體106的汲極,背閘極是被連接至Pch電晶體105的源極與Pch電晶體106的源極。Pch電晶體105的閘極是被連接至節點111,背閘極是被連接至Pch電晶體105的源極。Pch電晶體106的閘極是被連接至節點110,背閘極是被連接至Pch電晶體106的源極。Pch電晶體104的汲極是被連接至輸出端子122,閘極是被連接至節點110,背閘極是被連接至錯誤放大器102的輸出。電阻107是一片側被連接至輸出端子122,相反側被連接至電阻108。Nch電晶體109是閘極被連接至節點110,汲極被連接至電阻108,源極被連接至VSS端子123。比較電路130是被連接至輸出端子122、VDD端子121、VSS端子123、節點110及節點111。輸出端子122是備份電池112與負荷113被並聯。The connection of the voltage regulator of the present invention is explained. The output of the Vref circuit is an inverting input terminal that is connected to the error amplifier 102. The non-inverting input terminal of the error amplifier 102 is connected to the connection point of the resistor 107 and the resistor 108, and the output is connected to the gate of the Pch transistor 103 and the source of the Pch transistor 104. The source of the Pch transistor 103 is connected to the VDD terminal 121 and the drain of the Pch transistor 105, the drain is connected to the output terminal 122 and the drain of the Pch transistor 106, and the back gate is connected to the Pch The source of the crystal 105 and the source of the Pch transistor 106. The gate of the Pch transistor 105 is connected to the node 111, and the back gate is connected to the source of the Pch transistor 105. The gate of Pch transistor 106 is connected to node 110 and the back gate is connected to the source of Pch transistor 106. The drain of Pch transistor 104 is connected to output terminal 122, the gate is connected to node 110, and the back gate is connected to the output of error amplifier 102. The resistor 107 is connected to the output terminal 122 on one side and to the resistor 108 on the opposite side. The Nch transistor 109 has a gate connected to the node 110, a drain connected to the resistor 108, and a source connected to the VSS terminal 123. The comparison circuit 130 is connected to the output terminal 122, the VDD terminal 121, the VSS terminal 123, the node 110, and the node 111. The output terminal 122 is a backup battery 112 and a load 113 are connected in parallel.
其次說明有關比較電路130的連接。Pch電晶體201的閘極是被連接至Pch電晶體202的閘極、Pch電晶體201的汲極及定電流電路203,源極是被連接至VDD端子121,背閘極是被連接至VDD端子121。Pch電晶體202的汲極是被連接至反相器205與定電流電路204,源極是被連接至輸出端子122,背閘極是被連接至輸出端子122。反相器205的輸出是被連接至反相器206,反相器205是作為電源被連接至輸出端子122。反相器206的輸出是被連接至位準移位器207與CONT端子223,反相器206是作為電源被連接至輸出端子122。位準移位器207的輸出是被連接至反相器208,位準移位器207是作為電源被連接至VDD端子121。反相器208的輸出是被連接至CONTX端子222,反相器208是作為電源被連接至VDD端子121。CONT端子223是結線至圖1的節點111,CONTX端子222是結線至圖1的節點110。Next, the connection of the comparison circuit 130 will be described. The gate of the Pch transistor 201 is connected to the gate of the Pch transistor 202, the drain of the Pch transistor 201, and the constant current circuit 203. The source is connected to the VDD terminal 121, and the back gate is connected to VDD. Terminal 121. The drain of Pch transistor 202 is connected to inverter 205 and constant current circuit 204, the source is connected to output terminal 122, and the back gate is connected to output terminal 122. The output of the inverter 205 is connected to an inverter 206 which is connected as a power source to the output terminal 122. The output of inverter 206 is coupled to level shifter 207 and CONT terminal 223, which is coupled to output terminal 122 as a power source. The output of the level shifter 207 is connected to an inverter 207 which is connected as a power source to the VDD terminal 121. The output of inverter 208 is connected to CONTX terminal 222, which is connected as power supply to VDD terminal 121. The CONT terminal 223 is a junction to the node 111 of FIG. 1, and the CONTX terminal 222 is a junction to the node 110 of FIG.
其次說明有關本發明的電壓調整器的動作。當VDD端子121端子的電位比輸出端子122端子的電位更高時,因為Pch電晶體201的閘極-源極間電壓比Pch電晶體202的閘極-源極間電壓更高,所以Pch電晶體202的汲極的電位是成為“L”位準(VSS端子123的電位)。藉由波形整形用的反相器205及206,反相器206的輸出所連接的CONT端子223的電壓是形成“L”位準。位準移位器207是將輸出端子122的電位位準變換成VDD端子121的電位位準。反相器208是將位準移位器207的輸出電壓予以反轉。當CONT端子223的電壓為“L”位準時,反相器208的輸出之CONTX端子222是成為VDD端子121的電位位準。此時,圖1的Pch電晶體103的基板(NWELL)電位,由於Pch電晶體105為ON狀態,Pch電晶體106為OFF狀態,所以成為VDD端子121的電位。亦即,VDD端子121的電位與輸出端子122的電位之較高的電位會成為Pch電晶體103的基板(NWEEL)電位。此時,Pch電晶體104是OFF狀態。一般,當電源被連接至VDD端子121時,VDD端子121的電位>輸出端子122的電位。Next, the operation of the voltage regulator according to the present invention will be described. When the potential of the terminal of the VDD terminal 121 is higher than the potential of the terminal of the output terminal 122, since the voltage between the gate and the source of the Pch transistor 201 is higher than the voltage between the gate and the source of the Pch transistor 202, the Pch is charged. The potential of the drain of the crystal 202 is at the "L" level (the potential of the VSS terminal 123). With the inverters 205 and 206 for waveform shaping, the voltage of the CONT terminal 223 to which the output of the inverter 206 is connected forms an "L" level. The level shifter 207 converts the potential level of the output terminal 122 to the potential level of the VDD terminal 121. Inverter 208 inverts the output voltage of level shifter 207. When the voltage of the CONT terminal 223 is at the "L" level, the CONTX terminal 222 of the output of the inverter 208 is at the potential level of the VDD terminal 121. At this time, the potential of the substrate (NWELL) of the Pch transistor 103 of FIG. 1 is in the ON state of the Pch transistor 105, and the Pch transistor 106 is in the OFF state, so that it becomes the potential of the VDD terminal 121. That is, the potential higher of the potential of the VDD terminal 121 and the potential of the output terminal 122 becomes the substrate (NWEEL) potential of the Pch transistor 103. At this time, the Pch transistor 104 is in an OFF state. Generally, when the power source is connected to the VDD terminal 121, the potential of the VDD terminal 121 > the potential of the output terminal 122.
另一方面,當電源未被連接至VDD端子121時,因為在輸出端子122連接備份用的電池112,所以VDD端子121的電位<輸出端子122的電位。此時,因為Pch電晶體201的閘極-源極間電壓比Pch電晶體202的閘極-源極間電壓更低,所以Pch電晶體202的汲極的電位是成為“H”位準(輸出端子122的電位)。藉由波形整形用的反相器205及206,反相器206的輸出之CONT端子223的電壓是形成“H”位準(輸出端子122的電位)。位準移位器207是將輸出端子122的電位位準變換成VDD端子121的電位位準。反相器208是將位準移位器207的輸出電壓予以反轉。當CONT端子223的電壓為“H”位準(輸出端子122的電位)時,反相器208的輸出之CONTX端子222的電壓是成為“L”位準(VSS端子123的電位位準)。此時,圖1的Pch電晶體103的基板(NWELL)電位,由於Pch電晶體106為ON狀態,Pch電晶體105為OFF狀態,所以成為輸出端子122的電位。亦即VDD端子121的電位與輸出端子122的電位之較高的電位會成為Pch電晶體103的基板(NWEEL)電位。此時,Pch電晶體104為ON狀態,藉由將Pch電晶體103的閘極形成與輸出端子122同電位,使Pch電晶體103成OFF狀態。如此一來,即使VDD端子121的電位<輸出端子122的電位,還是可藉由Pch電晶體103來防止電流從輸出端子122流至VDD端子121。On the other hand, when the power source is not connected to the VDD terminal 121, since the battery 112 for backup is connected to the output terminal 122, the potential of the VDD terminal 121 is <the potential of the output terminal 122. At this time, since the gate-source voltage of the Pch transistor 201 is lower than the gate-source voltage of the Pch transistor 202, the potential of the drain of the Pch transistor 202 becomes the "H" level ( The potential of the output terminal 122). With the inverters 205 and 206 for waveform shaping, the voltage of the CONT terminal 223 of the output of the inverter 206 is at the "H" level (the potential of the output terminal 122). The level shifter 207 converts the potential level of the output terminal 122 to the potential level of the VDD terminal 121. Inverter 208 inverts the output voltage of level shifter 207. When the voltage of the CONT terminal 223 is at the "H" level (the potential of the output terminal 122), the voltage of the CONTX terminal 222 of the output of the inverter 208 becomes the "L" level (the potential level of the VSS terminal 123). At this time, the potential of the substrate (NWELL) of the Pch transistor 103 of FIG. 1 is in the ON state of the Pch transistor 106, and the Pch transistor 105 is in the OFF state, so that it becomes the potential of the output terminal 122. That is, the potential of the potential of the VDD terminal 121 and the potential of the output terminal 122 becomes the substrate (NWEEL) potential of the Pch transistor 103. At this time, the Pch transistor 104 is in an ON state, and the Pch transistor 103 is turned OFF by forming the gate of the Pch transistor 103 at the same potential as the output terminal 122. As a result, even if the potential of the VDD terminal 121 < the potential of the output terminal 122, current can be prevented from flowing from the output terminal 122 to the VDD terminal 121 by the Pch transistor 103.
其次說明有關在圖1所使用的錯誤放大器102。一般錯誤放大器的構成是形成圖7所示。由定電流電路705、Nch電晶體701、702、及Pch電晶體703、704所構成,INP721為+輸入端子,INM722為-輸入端子,EOUT723為輸出。並且,圖8是表示Pch電晶體704的剖面圖。在P基板上的NWELL之中存在P型的源極及汲極領域。P基板是被連接至低電位的VSS端子123。且NWELL是被連接至源極(VDD端子121)。Next, the error amplifier 102 used in Fig. 1 will be explained. The general error amplifier is constructed as shown in FIG. The constant current circuit 705, the Nch transistors 701 and 702, and the Pch transistors 703 and 704 are formed. The INP 721 is a + input terminal, the INM 722 is an input terminal, and the EOUT 723 is an output. 8 is a cross-sectional view showing the Pch transistor 704. Among the NWELLs on the P substrate, there are P-type source and drain regions. The P substrate is a VSS terminal 123 that is connected to a low potential. And NWELL is connected to the source (VDD terminal 121).
在使用圖7之一般的錯誤放大器時,當輸出端子122的電位比VDD端子121的電位更高時,若Pch電晶體104為ON狀態,則錯誤放大器102的輸出723是形成被連接至輸出端子122。此時,在圖7之一般的錯誤放大器電路中,以電晶體704的汲極作為射極,以源極作為基極,以基板作為集極之PNP電晶體為ON狀態,經由Pch電晶體104,備份電池112會被放電。為了迴避此現象,最好是使用圖9的構成作為錯誤放大器電路。When the general error amplifier of FIG. 7 is used, when the potential of the output terminal 122 is higher than the potential of the VDD terminal 121, if the Pch transistor 104 is in the ON state, the output 723 of the error amplifier 102 is formed to be connected to the output terminal. 122. At this time, in the general error amplifier circuit of FIG. 7, the drain of the transistor 704 is used as the emitter, the source is the base, and the PNP transistor having the substrate as the collector is in the ON state, via the Pch transistor 104. The backup battery 112 will be discharged. In order to avoid this phenomenon, it is preferable to use the configuration of Fig. 9 as an error amplifier circuit.
圖9的錯誤放大器電路102的第三實施例是在錯誤放大器的輸出723與Pch電晶體704之間新追加Pch電晶體801。Pch電晶體801是將源極及NWELL連接至錯誤放大器的輸出723,將汲極連接至Pch電晶體704的汲極,閘極是依據圖1的節點111的信號(CONT信號)來控制。圖10是表示Pch電晶體704、801的剖面圖。此情況,當輸出端子122的電位比VDD端子121的電位更高時,在Pch電晶體104形成ON狀態之下,錯誤放大器102的輸出723是被連接至輸出端子122,但節點111的信號是成為與輸出端子122同電位,因此Pch電晶體801是OFF狀態,不會有電流從Pch電晶體801的汲極流至Pch電晶體704的汲極的情形。The third embodiment of the error amplifier circuit 102 of FIG. 9 is to newly add a Pch transistor 801 between the output 723 of the error amplifier and the Pch transistor 704. The Pch transistor 801 is an output 723 that connects the source and NWELL to the error amplifier, and connects the drain to the drain of the Pch transistor 704. The gate is controlled in accordance with the signal (CONT signal) of the node 111 of FIG. FIG. 10 is a cross-sectional view showing the Pch transistors 704 and 801. In this case, when the potential of the output terminal 122 is higher than the potential of the VDD terminal 121, the output 723 of the error amplifier 102 is connected to the output terminal 122 while the Pch transistor 104 is in an ON state, but the signal of the node 111 is Since the potential is the same as that of the output terminal 122, the Pch transistor 801 is in an OFF state, and no current flows from the drain of the Pch transistor 801 to the drain of the Pch transistor 704.
而且,與圖7的不同是在以Nch電晶體701及702所構成的差動輸入電路與源極側的定電流電路705之間插入Nch電晶體802的點。Nch電晶體802的汲極是被連接至Nch電晶體701及702的源極,源極是被連接至定電流電路705,閘極是被連接至圖1的節點110的信號(CONTX信號)且被控制。當輸出端子122的電位形成比VDD端子121的電位更高時,Pch電晶體104為ON狀態,錯誤放大器102的輸出723是被連接至輸出端子122,Nch電晶體702是成為ON狀態。而且,輸出端子122與Nch電晶體701、702的源極會成為被電性連接的狀態,但在Nch電晶體802為OFF狀態下,遮斷定電流電路705的電流通路。如此一來,可防止電流從輸出端子122通過Nch電晶體702,流至VSS端子123。Further, unlike FIG. 7, the Nch transistor 802 is inserted between the differential input circuit composed of the Nch transistors 701 and 702 and the constant current circuit 705 on the source side. The drain of Nch transistor 802 is connected to the source of Nch transistors 701 and 702, the source is connected to constant current circuit 705, and the gate is a signal (CONTX signal) that is connected to node 110 of FIG. controlled. When the potential of the output terminal 122 is formed higher than the potential of the VDD terminal 121, the Pch transistor 104 is in an ON state, the output 723 of the error amplifier 102 is connected to the output terminal 122, and the Nch transistor 702 is in an ON state. Further, the output terminal 122 and the source of the Nch transistors 701 and 702 are electrically connected to each other. However, when the Nch transistor 802 is turned off, the current path of the constant current circuit 705 is blocked. In this way, current can be prevented from flowing from the output terminal 122 through the Nch transistor 702 to the VSS terminal 123.
在圖9的說明,是Nch電晶體802會被插入Nch電晶體701、702的源極與定電流電路705之間,但明顯即使被插入定電流電路705與VSS端子123之間也具有同樣的效果。又,Pch電晶體801會被插入錯誤放大器102的輸出723與Pch電晶體704之間,但明顯即使被插入VDD端子121與Pch電晶體704之間也具有同樣的效果。In the description of FIG. 9, the Nch transistor 802 is inserted between the source of the Nch transistors 701 and 702 and the constant current circuit 705, but it is apparent that even if the constant current circuit 705 and the VSS terminal 123 are inserted, the same is true. effect. Further, the Pch transistor 801 is inserted between the output 723 of the error amplifier 102 and the Pch transistor 704, but the same effect is obtained even if it is inserted between the VDD terminal 121 and the Pch transistor 704.
圖9是作為1段放大電路的錯誤放大器的例子來進行說明,但即使錯誤放大器電路為2段以上的多段放大電路也無妨。該情況,只要像圖9那樣在錯誤放大器的輸出與VDD側插入具有用以遮斷電流通路的機能之Pch電晶體801,在錯誤放大器的輸出與VSS側插入具有用以遮斷電流通路的機能之Nch電晶體802即可。FIG. 9 is an example of an error amplifier as a one-stage amplifier circuit, but the error amplifier circuit may be a multi-stage amplifier circuit of two or more stages. In this case, as long as the Pch transistor 801 having the function for blocking the current path is inserted in the output of the error amplifier and the VDD side as shown in FIG. 9, the output of the error amplifier and the VSS side are inserted to block the current path. The function of the Nch transistor 802 can be.
如以上說明那樣,與圖11的以往電壓調整器作比較時,因為用以比較VDD端子121的電位與輸出端子122的電位之電阻1101、電阻1102、電阻1103、電阻1104不存在,所以可削減該部分的消費電流。例如,若將備份電池112的電壓設為3V,將電阻1103與電阻1104的和假設為3MegΩ,則在電阻1103及電阻1104是1μA的電流會從備份電池112消費。但,圖1的電壓調整器是相當於此電阻者不存在,無該部分的消費。圖11的比較器1105的消費電流與圖2的比較電路130的消費電流假設相等,0.5μA。此時,在圖11的電壓調整器是從備份電池112消費1.5μA,相對的,在圖1的電壓調整器是僅消費其1/3的0.5μA,可大幅度延長備份電池112的動作時間。As described above, when compared with the conventional voltage regulator of FIG. 11, the resistor 1101, the resistor 1102, the resistor 1103, and the resistor 1104 for comparing the potential of the VDD terminal 121 with the potential of the output terminal 122 are not present, so that the reduction can be reduced. The consumption current of this part. For example, if the voltage of the backup battery 112 is set to 3 V and the sum of the resistor 1103 and the resistor 1104 is assumed to be 3 Meg Ω, a current of 1 μA at the resistor 1103 and the resistor 1104 is consumed from the backup battery 112. However, the voltage regulator of Figure 1 is equivalent to the resistor, and there is no such consumption. The consumption current of the comparator 1105 of FIG. 11 is equal to the consumption current of the comparison circuit 130 of FIG. 2, 0.5 μA. At this time, the voltage regulator in FIG. 11 consumes 1.5 μA from the backup battery 112. In contrast, the voltage regulator in FIG. 1 consumes only 1/3 of 0.5 μA, which can greatly extend the operation time of the backup battery 112. .
圖3是表示圖1之本發明的電壓調整器的比較電路130的第二實施例。第二實施例的比較電路130是以定電流電路303、定電流電路304、Pch電晶體201、Pch電晶體301、Pch電晶體302、Pch電晶體305、反相器205、反相器206、反相器208、及位準移位器207所構成。與圖2的不同是相當於Pch電晶體202者為由2個的電晶體、Pch電晶體301及Pch電晶體302所構成,且追加用以實現磁滯機能的Pch電晶體305。並且,定電流電路203及定電流電路204是以將閘極及源極連接至VSS端子123的N通道‧空乏型MOS電晶體來具體地顯示。Fig. 3 is a view showing a second embodiment of the comparison circuit 130 of the voltage regulator of the present invention shown in Fig. 1. The comparison circuit 130 of the second embodiment is a constant current circuit 303, a constant current circuit 304, a Pch transistor 201, a Pch transistor 301, a Pch transistor 302, a Pch transistor 305, an inverter 205, an inverter 206, The inverter 208 and the level shifter 207 are formed. The difference from FIG. 2 is that the Pch transistor 202 is composed of two transistors, a Pch transistor 301, and a Pch transistor 302, and a Pch transistor 305 for realizing a hysteresis function is added. Further, the constant current circuit 203 and the constant current circuit 204 are specifically displayed by an N-channel ‧ depletion MOS transistor that connects the gate and the source to the VSS terminal 123.
其次說明有關比較電路130的連接。Pch電晶體201的閘極是被連接至Pch電晶體301的閘極、Pch電晶體302的閘極、Pch電晶體201的汲極、及定電流電路303,源極是被連接至VDD端子121,背閘極是被連接至VDD端子121。Pch電晶體302的汲極是被連接至反相器205與定電流電路304,源極是被連接至Pch電晶體301的汲極與Pch電晶體305的汲極,背閘極是被連接至輸出端子122。Pch電晶體301的源極是被連接至輸出端子122,背閘極是被連接至輸出端子122。Pch電晶體305的閘極是被連接至反相器205的輸出,源極是被連接至輸出端子122,背閘極是被連接至輸出端子122。反相器205的輸出是被連接至反相器206,反相器205是作為電源被連接至輸出端子122。反相器206的輸出是被連接至位準移位器207與CONT端子223,反相器206是作為電源被連接至輸出端子122。位準移位器207的輸出是被連接至反相器208,位準移位器207是作為電源被連接至VDD端子121。反相器208的輸出是被連接至CONTX端子222,反相器208是作為電源被連接至VDD端子121。定電流電路303及定電流電路304是使用N通道‧空乏型MOS電晶體,雙方皆將閘極與源極連接至VSS端子123,使用汲極作為輸出。CONT端子223是結線至圖1的節點111,CONTX端子222是結線至圖1的節點110。Next, the connection of the comparison circuit 130 will be described. The gate of the Pch transistor 201 is connected to the gate of the Pch transistor 301, the gate of the Pch transistor 302, the drain of the Pch transistor 201, and the constant current circuit 303, and the source is connected to the VDD terminal 121. The back gate is connected to the VDD terminal 121. The drain of the Pch transistor 302 is connected to the inverter 205 and the constant current circuit 304. The source is connected to the drain of the Pch transistor 301 and the drain of the Pch transistor 305, and the back gate is connected to Output terminal 122. The source of the Pch transistor 301 is connected to the output terminal 122, and the back gate is connected to the output terminal 122. The gate of Pch transistor 305 is connected to the output of inverter 205, the source is connected to output terminal 122, and the back gate is connected to output terminal 122. The output of the inverter 205 is connected to an inverter 206 which is connected as a power source to the output terminal 122. The output of inverter 206 is coupled to level shifter 207 and CONT terminal 223, which is coupled to output terminal 122 as a power source. The output of the level shifter 207 is connected to an inverter 207 which is connected as a power source to the VDD terminal 121. The output of inverter 208 is connected to CONTX terminal 222, which is connected as power supply to VDD terminal 121. The constant current circuit 303 and the constant current circuit 304 are N-channel ‧ depletion MOS transistors, both of which connect the gate and the source to the VSS terminal 123, and use the drain as the output. The CONT terminal 223 is a junction to the node 111 of FIG. 1, and the CONTX terminal 222 is a junction to the node 110 of FIG.
其次說明有關使用第二實施例的比較電路的電壓調整器的動作。Next, the operation of the voltage regulator using the comparison circuit of the second embodiment will be described.
當VDD端子121的電位比輸出端子122的電位更充分高時,因為Pch電晶體201的閘極-源極間電壓比Pch電晶體301、Pch電晶體302的閘極-源極間電壓更充分地高,所以Pch電晶體302的汲極的電位是成為“L”位準(VSS端子123的電位)。藉由波形整形用的反相器205及206,反相器205的輸出是成為“H”(輸出端子122的電位),Pch電晶體305是OFF狀態,反相器206的輸出之CONT端子223的電壓是形成“L”位準。位準移位器207是將輸出端子122的電位位準變換成VDD端子121的電位位準。反相器208是將位準移位器207的輸出電壓予以反轉。當CONT端子223的電壓為“L”位準時,反相器208的輸出之CONTX端子222是成為VDD端子121的電位位準。此時,Pch電晶體103的基板(NWELL)電位,由於Pch電晶體105為ON狀態,Pch電晶體106為OFF狀態,所以成為VDD端子121的電位。亦即,VDD端子121的電位與輸出端子122的電位之較高的電位會成為Pch電晶體103的基板(NWELL)電位。此時,Pch電晶體104是OFF狀態。一般,當電源被連接至VDD端子121時,VDD端子121的電位>輸出端子122的電位。When the potential of the VDD terminal 121 is sufficiently higher than the potential of the output terminal 122, the gate-source voltage of the Pch transistor 201 is more sufficient than the gate-source voltage of the Pch transistor 301 and the Pch transistor 302. Since the ground is high, the potential of the drain of the Pch transistor 302 is at the "L" level (the potential of the VSS terminal 123). The inverters 205 and 206 for waveform shaping have the output of the inverter 205 being "H" (the potential of the output terminal 122), the Pch transistor 305 being in the OFF state, and the output of the inverter 206 being the CONT terminal 223. The voltage is formed at the "L" level. The level shifter 207 converts the potential level of the output terminal 122 to the potential level of the VDD terminal 121. Inverter 208 inverts the output voltage of level shifter 207. When the voltage of the CONT terminal 223 is at the "L" level, the CONTX terminal 222 of the output of the inverter 208 is at the potential level of the VDD terminal 121. At this time, since the potential of the substrate (NWELL) of the Pch transistor 103 is in the ON state and the Pch transistor 106 is in the OFF state, the potential of the VDD terminal 121 is set. That is, the potential higher than the potential of the VDD terminal 121 and the potential of the output terminal 122 becomes the substrate (NWELL) potential of the Pch transistor 103. At this time, the Pch transistor 104 is in an OFF state. Generally, when the power source is connected to the VDD terminal 121, the potential of the VDD terminal 121 > the potential of the output terminal 122.
其次,一旦VDD端子121的電位下降,則因為Pch電晶體305是OFF狀態,所以依據Pch電晶體301、Pch電晶體302的複合電晶體及Pch電晶體201來比較VDD端子121的電壓與輸出端子122端子的電壓。一旦VDD端子121的電位下降,比起輸出端子122的電位,僅ΔV1下降,則因為Pch電晶體201的閘極-源極間電壓比Pch電晶體301、Pch電晶體302的閘極-源極間電壓只更低ΔV1,所以Pch電晶體302的汲極的電位是成為“H”位準(輸出端子122的電位)。藉由波形整形用的反相器205及206,反相器205的輸出是成為“L”位準,Pch電晶體305是ON狀態,反相器206的輸出之CONT端子223的電壓是形成“H”位準(輸出端子122的電位)。位準移位器207是將輸出端子122的電位位準變換成VDD端子121的電位位準。反相器208是將位準移位器207的輸出電壓予以反轉。當CONT端子223的電壓為“H”位準時,反相器208的輸出之CONTX端子222是成為“L”位準。此時,圖1的Pch電晶體103的基板(NWELL)電位,由於Pch電晶體106為ON狀態,Pch電晶體105為OFF狀態,所以成為輸出端子122的電位。亦即,VDD端子121的電位與輸出端子122的電位之較高的電位會成為Pch電晶體103的基板(NWELL)電位。此時,Pch電晶體104是ON狀態,藉由將Pch電晶體103的閘極形成與輸出端子122同電位,使Pch電晶體103成為OFF狀態。Next, once the potential of the VDD terminal 121 falls, since the Pch transistor 305 is in an OFF state, the voltage and output terminal of the VDD terminal 121 are compared in accordance with the Pch transistor 301, the composite transistor of the Pch transistor 302, and the Pch transistor 201. The voltage of the 122 terminal. Once the potential of the VDD terminal 121 falls, only ΔV1 falls compared to the potential of the output terminal 122, because the gate-source voltage of the Pch transistor 201 is greater than the gate-source of the Pch transistor 301 and the Pch transistor 302. Since the inter-voltage is only lower by ΔV1, the potential of the drain of the Pch transistor 302 is at the "H" level (the potential of the output terminal 122). With the inverters 205 and 206 for waveform shaping, the output of the inverter 205 is at the "L" level, the Pch transistor 305 is in the ON state, and the voltage of the CONT terminal 223 of the output of the inverter 206 is formed. H" level (potential of output terminal 122). The level shifter 207 converts the potential level of the output terminal 122 to the potential level of the VDD terminal 121. Inverter 208 inverts the output voltage of level shifter 207. When the voltage of the CONT terminal 223 is at the "H" level, the CONTX terminal 222 of the output of the inverter 208 is at the "L" level. At this time, the potential of the substrate (NWELL) of the Pch transistor 103 of FIG. 1 is in the ON state of the Pch transistor 106, and the Pch transistor 105 is in the OFF state, so that it becomes the potential of the output terminal 122. That is, the potential higher than the potential of the VDD terminal 121 and the potential of the output terminal 122 becomes the substrate (NWELL) potential of the Pch transistor 103. At this time, the Pch transistor 104 is in an ON state, and the Pch transistor 103 is turned off by forming the gate of the Pch transistor 103 at the same potential as the output terminal 122.
ΔV1的電壓是如式(1)般。The voltage of ΔV1 is as in the equation (1).
在此,I是定電流電路303、304的電流值,μ是Pch電晶體201及Pch電晶體301與Pch電晶體302的移動度,L6是Pch電晶體301與Pch電晶體302的L長的和,L5是Pch電晶體201的電晶體的L長,W6是Pch電晶體301與Pch電晶體302的W長,W5是Pch電晶體201的W長。Here, I is the current value of the constant current circuits 303, 304, μ is the mobility of the Pch transistor 201 and the Pch transistor 301 and the Pch transistor 302, and L6 is the L length of the Pch transistor 301 and the Pch transistor 302. And L5 is the L length of the transistor of the Pch transistor 201, W6 is the W length of the Pch transistor 301 and the Pch transistor 302, and W5 is the W length of the Pch transistor 201.
其次,一旦VDD端子121電位上升,則因為Pch電晶體305是ON狀態,所以依據Pch電晶體201與Pch電晶體302的電晶體來比較VDD端子121電壓與輸出端子122電壓。當定電流電路303與304的電流值相等,且Pch電晶體201與Pch電晶體302的電晶體的種類(VTH、移動度等),L長,W長相同時,式(1)的ΔV1是成為ΔV1=0,當VDD端子121電壓與輸出端子122電壓幾乎相等時,CONT端子223及CONTX端子222的電壓會反轉。Next, when the potential of the VDD terminal 121 rises, since the Pch transistor 305 is in the ON state, the voltage of the VDD terminal 121 and the output terminal 122 are compared in accordance with the transistors of the Pch transistor 201 and the Pch transistor 302. When the current values of the constant current circuits 303 and 304 are equal, and the type of the transistor (VTH, mobility, etc.) of the Pch transistor 201 and the Pch transistor 302 is L long and the W length is the same, the ΔV1 of the equation (1) becomes When ΔV1 = 0, when the voltage of the VDD terminal 121 is almost equal to the voltage of the output terminal 122, the voltages of the CONT terminal 223 and the CONTX terminal 222 are inverted.
圖4是表示將橫軸設為時間,將縱軸設為電壓,將輸出端子122的電壓設為一定,來使VDD端子121的電壓變化時之CONT端子223與CONTX端子222的電壓波形。當VDD端子121的電壓比輸出端子122的電壓只更下降ΔV1時,CONT端子223與CONTX端子222的電壓會反轉,然後,使VDD端子121的電壓上昇,當VDD端子121的電壓與輸出端子122的電壓形成相等時,CONT端子223與CONTX端子222的電壓會反轉。如此一來,在切換Pch電晶體103的基板(NWELL)電位之VDD端子121的電壓與輸出端子122的電壓之間附加磁滯。藉此,即使VDD端子121的電壓與輸出端子122的電壓接近,也不會有錯誤動作,可確實地進行Pch電晶體103的基板(NWELL)電位的切換。4 is a voltage waveform of the CONT terminal 223 and the CONTX terminal 222 when the horizontal axis is the time, the vertical axis is the voltage, and the voltage of the output terminal 122 is constant, and the voltage of the VDD terminal 121 is changed. When the voltage of the VDD terminal 121 is only decreased by ΔV1 from the voltage of the output terminal 122, the voltages of the CONT terminal 223 and the CONTX terminal 222 are reversed, and then the voltage of the VDD terminal 121 is raised, and the voltage of the VDD terminal 121 and the output terminal are When the voltages of 122 are equal, the voltages of the CONT terminal 223 and the CONTX terminal 222 are reversed. As a result, hysteresis is added between the voltage of the VDD terminal 121 that switches the potential of the substrate (NWELL) of the Pch transistor 103 and the voltage of the output terminal 122. Thereby, even if the voltage of the VDD terminal 121 is close to the voltage of the output terminal 122, there is no erroneous operation, and the substrate (NWELL) potential of the Pch transistor 103 can be reliably switched.
另外,此ΔV1的值,當VDD端子121的電壓下降時,需要以Pch電晶體103的輸出端子122與基板間的寄生二極體不會成為ON狀態的方式,設定成寄生二極體的順方向ON電壓以下(約0.6V)。通常,ΔV1的值是50mV~200mV前後。In addition, when the voltage of the VDD terminal 121 is lowered, the value of the ΔV1 needs to be set so that the parasitic diode between the output terminal 122 of the Pch transistor 103 and the substrate does not turn ON. The direction is below the ON voltage (about 0.6V). Usually, the value of ΔV1 is around 50 mV to 200 mV.
又,圖3是將Pch電晶體305與Pch電晶體301並聯,但明顯即使將Pch電晶體305與Pch電晶體302並聯,還是具有同樣的效果。又,雖是以實施例1來表示,但有關錯誤放大器最好是與實施例1同樣使用圖9的構成。3 is a diagram in which the Pch transistor 305 is connected in parallel with the Pch transistor 301. However, even if the Pch transistor 305 is connected in parallel with the Pch transistor 302, the same effect is obtained. Further, although it is shown in the first embodiment, it is preferable to use the configuration of Fig. 9 in the same manner as in the first embodiment.
圖5是表示圖1之本發明的電壓調整器的比較電路130的第三實施例。第三實施例的比較電路130是以定電流電路303、定電流電路304、Pch電晶體202、Pch電晶體501、Pch電晶體502、Pch電晶體503、反相器205、反相器206、反相器208、及位準移位器207所構成。與圖2的不同是相當於Pch電晶體201者為由2個的Pch電晶體501及Pch電晶體502所構成,且追加用以實現磁滯機能的Pch電晶體503。並且,定電流電路203及204是以和圖3同樣將閘極及源極連接至VSS端子123的N通道‧空乏型MOS電晶體來具體地顯示。Fig. 5 is a view showing a third embodiment of the comparison circuit 130 of the voltage regulator of the present invention shown in Fig. 1. The comparison circuit 130 of the third embodiment is a constant current circuit 303, a constant current circuit 304, a Pch transistor 202, a Pch transistor 501, a Pch transistor 502, a Pch transistor 503, an inverter 205, an inverter 206, The inverter 208 and the level shifter 207 are formed. The difference from FIG. 2 is that the Pch transistor 201 is composed of two Pch transistors 501 and Pch transistors 502, and a Pch transistor 503 for realizing a hysteresis function is added. Further, the constant current circuits 203 and 204 are specifically shown in an N-channel ‧ depletion MOS transistor in which the gate and the source are connected to the VSS terminal 123 in the same manner as in FIG. 3 .
其次說明有關比較電路130的連接。Pch電晶體501的閘極是被連接至Pch電晶體202的閘極、Pch電晶體502的閘極、Pch電晶體502的汲極、及定電流電路303,源極是被連接至VDD端子121,汲極是被連接至Pch電晶體502的源極與Pch電晶體503的汲極,背閘極是被連接至VDD端子121。Pch電晶體503的閘極是被連接至位準移位器207的輸出,源極是被連接至VDD端子121,背閘極是被連接至VDD端子121。Pch電晶體202的汲極是被連接至反相器205與定電流電路304,源極是被連接至輸出端子122,背閘極是被連接至輸出端子122。反相器205的輸出是被連接至反相器206,反相器205是作為電源被連接至輸出端子122。反相器206的輸出是被連接至位準移位器207與CONT端子223,反相器206是作為電源被連接至輸出端子122。位準移位器207的輸出是被連接至反相器208,位準移位器207是作為電源被連接至VDD端子121。反相器208的輸出是被連接至CONTX端子222,反相器208是作為電源被連接至VDD端子121。定電流電路303及定電流電路304是使用N通道‧空乏型MOS電晶體,雙方皆將閘極與源極連接至VSS端子123,使用汲極作為輸出。CONT端子223是結線至圖1的節點111,CONTX端子222是結線至圖1的節點110。Next, the connection of the comparison circuit 130 will be described. The gate of the Pch transistor 501 is connected to the gate of the Pch transistor 202, the gate of the Pch transistor 502, the drain of the Pch transistor 502, and the constant current circuit 303, and the source is connected to the VDD terminal 121. The drain is connected to the source of the Pch transistor 502 and the drain of the Pch transistor 503, and the back gate is connected to the VDD terminal 121. The gate of the Pch transistor 503 is connected to the output of the level shifter 207, the source is connected to the VDD terminal 121, and the back gate is connected to the VDD terminal 121. The drain of Pch transistor 202 is connected to inverter 205 and constant current circuit 304, the source is connected to output terminal 122, and the back gate is connected to output terminal 122. The output of the inverter 205 is connected to an inverter 206 which is connected as a power source to the output terminal 122. The output of inverter 206 is coupled to level shifter 207 and CONT terminal 223, which is coupled to output terminal 122 as a power source. The output of the level shifter 207 is connected to an inverter 207 which is connected as a power source to the VDD terminal 121. The output of inverter 208 is connected to CONTX terminal 222, which is connected as power supply to VDD terminal 121. The constant current circuit 303 and the constant current circuit 304 are N-channel ‧ depletion MOS transistors, both of which connect the gate and the source to the VSS terminal 123, and use the drain as the output. The CONT terminal 223 is a junction to the node 111 of FIG. 1, and the CONTX terminal 222 is a junction to the node 110 of FIG.
其次說明有關使用第三實施例的比較電路的電壓調整器的動作。當VDD端子121的電位比輸出端子122的電位更充分高時,Pch電晶體501、Pch電晶體502為ON狀態,Pch電晶體202為OFF狀態,Pch電晶體202的汲極的電位是成為“L”位準(VSS端子123的電位)。藉由波形整形用的反相器205及206,反相器206的輸出之CONT端子223的電壓是形成“L”位準。位準移位器207是將輸出端子122的電位位準變換成VDD端子121的電位位準。反相器208是將位準移位器207的輸出電壓予以反轉。當CONT端子223的電壓為“L”位準時,位準移位器207的輸出是成為“L”位準,Pch電晶體503是ON狀態,反相器208的輸出之CONTX端子222是成為VDD端子121的電位位準。此時,圖1之Pch電晶體103的基板(NWELL)電位,由於Pch電晶體105為ON狀態,Pch電晶體106為OFF狀態,所以成為VDD端子121的電位。亦即,VDD端子121的電位與輸出端子122的電位之較高的電位會成為Pch電晶體103的基板(NWELL)電位。此時,Pch電晶體104是OFF狀態。一般,當電源被連接至VDD端子121時,VDD端子121的電位>輸出端子122的電位。Next, the operation of the voltage regulator using the comparison circuit of the third embodiment will be described. When the potential of the VDD terminal 121 is sufficiently higher than the potential of the output terminal 122, the Pch transistor 501 and the Pch transistor 502 are in an ON state, the Pch transistor 202 is in an OFF state, and the potential of the drain of the Pch transistor 202 is " The L" level (potential of the VSS terminal 123). With the inverters 205 and 206 for waveform shaping, the voltage of the CONT terminal 223 of the output of the inverter 206 is at the "L" level. The level shifter 207 converts the potential level of the output terminal 122 to the potential level of the VDD terminal 121. Inverter 208 inverts the output voltage of level shifter 207. When the voltage of the CONT terminal 223 is at the "L" level, the output of the level shifter 207 is at the "L" level, the Pch transistor 503 is in the ON state, and the CONTX terminal 222 of the output of the inverter 208 is VDD. The potential level of the terminal 121. At this time, the potential of the substrate (NWELL) of the Pch transistor 103 of FIG. 1 is in the ON state of the Pch transistor 105, and the Pch transistor 106 is in the OFF state, so that it becomes the potential of the VDD terminal 121. That is, the potential higher than the potential of the VDD terminal 121 and the potential of the output terminal 122 becomes the substrate (NWELL) potential of the Pch transistor 103. At this time, the Pch transistor 104 is in an OFF state. Generally, when the power source is connected to the VDD terminal 121, the potential of the VDD terminal 121 > the potential of the output terminal 122.
其次,一旦VDD端子121的電位下降,則因為Pch電晶體503是ON狀態,所以依據Pch電晶體502與Pch電晶體202來比較VDD端子121的電壓與輸出端子122的電壓。當定電流電路303與304的電流值相等,且Pch電晶體502與Pch電晶體202的電晶體的種類(VTH、移動度等),L長,W長相同時,一旦VDD端子121的電位下降至與輸出端子122的電位大致同值,則Pch電晶體502為OFF狀態,Pch電晶體202為ON狀態,Pch電晶體202的汲極的電位是成為“H”位準(輸出端子122的電位)。藉由波形整形用的反相器205及206,反相器206的輸出之CONT端子223的電壓是形成“H”位準(輸出端子122的電位)。位準移位器207是將輸出端子122的電位位準變換成VDD端子121的電位位準。反相器208是將位準移位器207的輸出電壓予以反轉。當CONT端子223的電壓為“H”位準時,位準移位器207的輸出是成為VDD端子121的電壓,使Pch電晶體503形成OFF狀態,反相器208的輸出之CONTX端子222是成為“L”位準。此時,Pch電晶體103的基板(NWELL)電位,由於Pch電晶體106為ON狀態,Pch電晶體105為OFF狀態,所以成為輸出端子122的電位。亦即,VDD端子121的電位與輸出端子122的電位之較高的電位會成為Pch電晶體103的基板(NWELL)電位。此時,Pch電晶體104是ON狀態,藉由將Pch電晶體103的閘極形成與輸出端子122同電位,使Pch電晶體103成為OFF狀態。Next, when the potential of the VDD terminal 121 is lowered, since the Pch transistor 503 is in an ON state, the voltage of the VDD terminal 121 and the voltage of the output terminal 122 are compared in accordance with the Pch transistor 502 and the Pch transistor 202. When the current values of the constant current circuits 303 and 304 are equal, and the type of the transistor (VTH, mobility, etc.) of the Pch transistor 502 and the Pch transistor 202 is L long and the W length is the same, once the potential of the VDD terminal 121 is lowered to When the potential of the output terminal 122 is substantially the same value, the Pch transistor 502 is in the OFF state, the Pch transistor 202 is in the ON state, and the potential of the drain of the Pch transistor 202 is at the "H" level (the potential of the output terminal 122). . With the inverters 205 and 206 for waveform shaping, the voltage of the CONT terminal 223 of the output of the inverter 206 is at the "H" level (the potential of the output terminal 122). The level shifter 207 converts the potential level of the output terminal 122 to the potential level of the VDD terminal 121. Inverter 208 inverts the output voltage of level shifter 207. When the voltage of the CONT terminal 223 is "H" level, the output of the level shifter 207 is the voltage of the VDD terminal 121, the Pch transistor 503 is turned OFF, and the CONTX terminal 222 of the output of the inverter 208 is "L" level. At this time, since the potential of the substrate (NWELL) of the Pch transistor 103 is in the ON state and the Pch transistor 105 is in the OFF state, the potential of the output terminal 122 is set. That is, the potential higher than the potential of the VDD terminal 121 and the potential of the output terminal 122 becomes the substrate (NWELL) potential of the Pch transistor 103. At this time, the Pch transistor 104 is in an ON state, and the Pch transistor 103 is turned off by forming the gate of the Pch transistor 103 at the same potential as the output terminal 122.
其次,一旦VDD端子121的電位上升,則因為Pch電晶體503是OFF狀態,所以依據Pch電晶體501與Pch電晶體502的複合電晶體及Pch電晶體202來比較VDD端子121的電壓與輸出端子122的電壓。若VDD端子121的電壓比輸出端子122的電壓更只高ΔV2,則CONT端子223及CONTX端子222會反轉。Next, once the potential of the VDD terminal 121 rises, since the Pch transistor 503 is in an OFF state, the voltage and output terminal of the VDD terminal 121 are compared in accordance with the composite transistor of the Pch transistor 501 and the Pch transistor 502 and the Pch transistor 202. The voltage of 122. When the voltage of the VDD terminal 121 is higher than the voltage of the output terminal 122 by ΔV2, the CONT terminal 223 and the CONTX terminal 222 are inverted.
ΔV2的電壓是如式(2)般。The voltage of ΔV2 is as in the equation (2).
在此,I是定電流電路303、304的電流值,μ是Pch電晶體202及Pch電晶體501與Pch電晶體502的移動度,L6是Pch電晶體202的L長,L5是Pch電晶體501與Pch電晶體502的L長的和,W6是Pch電晶體202的W長,W5是Pch電晶體501與Pch電晶體502的W長。Here, I is the current value of the constant current circuits 303, 304, μ is the mobility of the Pch transistor 202 and the Pch transistor 501 and the Pch transistor 502, L6 is the L length of the Pch transistor 202, and L5 is the Pch transistor. 501 is the sum of the L length of the Pch transistor 502, W6 is the W length of the Pch transistor 202, and W5 is the W length of the Pch transistor 501 and the Pch transistor 502.
圖6是表示將橫軸設為時間,將縱軸設為電壓,將輸出端子122的電壓設為一定,而使VDD端子121的電壓變化時之CONT端子223與CONTX端子222的電壓波形。當VDD端子121的電壓下降,成為與輸出端子122的電壓相等時,CONT端子223與CONTX端子222的電壓會反轉。然後,使VDD端子121的電壓上昇,當VDD端子121的電壓比輸出端子122的電壓更只高ΔV2時,CONT端子223與CONTX端子222的電壓會反轉。如此一來,在切換Pch電晶體103的基板(NWELL)電位之VDD端子121的電壓與輸出端子122的電壓之間附加磁滯。藉此,即使VDD端子121的電壓與輸出端子122的電壓接近,也不會有錯誤動作,可確實地進行Pch電晶體103的基板(NWELL)電位的切換。6 is a voltage waveform of the CONT terminal 223 and the CONTX terminal 222 when the horizontal axis is the time, the vertical axis is the voltage, and the voltage of the output terminal 122 is constant, and the voltage of the VDD terminal 121 is changed. When the voltage of the VDD terminal 121 falls and becomes equal to the voltage of the output terminal 122, the voltages of the CONT terminal 223 and the CONTX terminal 222 are inverted. Then, the voltage of the VDD terminal 121 is raised, and when the voltage of the VDD terminal 121 is higher than the voltage of the output terminal 122 by ΔV2, the voltages of the CONT terminal 223 and the CONTX terminal 222 are inverted. As a result, hysteresis is added between the voltage of the VDD terminal 121 that switches the potential of the substrate (NWELL) of the Pch transistor 103 and the voltage of the output terminal 122. Thereby, even if the voltage of the VDD terminal 121 is close to the voltage of the output terminal 122, there is no erroneous operation, and the substrate (NWELL) potential of the Pch transistor 103 can be reliably switched.
另外,此ΔV2的值,當VDD端子121的電壓上升時,需要以Pch電晶體103的VDD端子121與基板間的寄生二極體不會成為ON狀態的方式,設定成寄生二極體的順方向ON電壓以下(約0.6V)。通常,ΔV2的值是50mV~200mV前後。In addition, when the voltage of the VDD terminal 121 rises, the value of the ΔV2 needs to be set so that the parasitic diode between the VDD terminal 121 of the Pch transistor 103 and the substrate does not turn ON. The direction is below the ON voltage (about 0.6V). Usually, the value of ΔV2 is around 50 mV to 200 mV.
又,圖5是將Pch電晶體503與Pch電晶體501並聯,但明顯即使將Pch電晶體503與Pch電晶體502並聯,還是具有同樣的效果。又,雖是以實施例1來表示,但有關錯誤放大器最好是與實施例1同樣使用圖9的構成。又,雖是以實施例1來表示,但有關錯誤放大器最好是與實施例1同樣使用圖9的構成。Further, FIG. 5 shows that the Pch transistor 503 is connected in parallel with the Pch transistor 501. However, it is obvious that the Pch transistor 503 and the Pch transistor 502 are connected in parallel, and the same effect is obtained. Further, although it is shown in the first embodiment, it is preferable to use the configuration of Fig. 9 in the same manner as in the first embodiment. Further, although it is shown in the first embodiment, it is preferable to use the configuration of Fig. 9 in the same manner as in the first embodiment.
圖12是表示第二實施形態的電壓調整器的電路圖。與圖1的不同是將Pch電晶體104的背閘極連接至Pch電晶體103的背閘極,在比較電路的130的輸出追加延遲電路1201的點。有關連接是比較電路130的輸出會被連接至延遲電路1201,延遲電路1201的輸出會作為節點110及節點111被輸出。Fig. 12 is a circuit diagram showing a voltage regulator of a second embodiment. The difference from FIG. 1 is that the back gate of the Pch transistor 104 is connected to the back gate of the Pch transistor 103, and the point of the delay circuit 1201 is added to the output of the comparison circuit 130. The output is that the output of the comparison circuit 130 is connected to the delay circuit 1201, and the output of the delay circuit 1201 is output as the node 110 and the node 111.
其次,說明有關第二實施形態的電壓調整器的動作。當VDD端子121的電壓比輸出端子122的電壓大時,節點111的電壓成為“L”位準,節點110的電壓成為“H”位準,Pch電晶體105會開啟,Pch電晶體106會關閉。此時,Pch電晶體104的基板(NWELL)電位是形成VDD端子121的電壓,可確實地關閉Pch電晶體104。Next, the operation of the voltage regulator according to the second embodiment will be described. When the voltage of the VDD terminal 121 is greater than the voltage of the output terminal 122, the voltage of the node 111 becomes the "L" level, the voltage of the node 110 becomes the "H" level, the Pch transistor 105 is turned on, and the Pch transistor 106 is turned off. . At this time, the substrate (NWELL) potential of the Pch transistor 104 is a voltage at which the VDD terminal 121 is formed, and the Pch transistor 104 can be surely turned off.
延遲電路1201是藉由計時器電路來防止節點110與111的電壓同時形成“L”位準。如此一來,可防止Pch電晶體105與106同時開啟,電流從VDD端子121流至輸出端子122,且從輸出端子122流至VDD端子121。The delay circuit 1201 prevents the voltages of the nodes 110 and 111 from simultaneously forming an "L" level by a timer circuit. In this way, the Pch transistors 105 and 106 can be prevented from being simultaneously turned on, current flows from the VDD terminal 121 to the output terminal 122, and flows from the output terminal 122 to the VDD terminal 121.
另外,第二實施形態的電壓調整器雖會發生Pch電晶體105與106同時開啟的問題,但亦可無延遲電路1201來使動作。Further, although the voltage regulator of the second embodiment has a problem that the Pch transistors 105 and 106 are simultaneously turned on, the delay circuit 1201 can be operated without the delay.
圖13是表示圖1之本發明的電壓調整器的錯誤放大器電路102的第三實施例。與圖9的不同是在定電流電路705之下插入Pch電晶體803,將閘極連接至CONT端子823的點。Fig. 13 is a view showing a third embodiment of the error amplifier circuit 102 of the voltage regulator of the present invention shown in Fig. 1. The difference from FIG. 9 is that a Pch transistor 803 is inserted under the constant current circuit 705 to connect the gate to the point of the CONT terminal 823.
其次針對動作來進行說明。當輸出端子122的電位比VDD端子121的電位更高時,Pch電晶體104為ON狀態,錯誤放大器102的輸出723是被連接至輸出端子122。由於Nch電晶體702是ON狀態,所以輸出端子122與Nch電晶體701、702的源極會成為被電性連接的狀態。然後,在Nch電晶體802、803為OFF狀態下,遮斷定電流電路705的電流通路,可防止電流從輸出端子122通過Nch電晶體702流至VSS端子123。Next, the action will be described. When the potential of the output terminal 122 is higher than the potential of the VDD terminal 121, the Pch transistor 104 is in an ON state, and the output 723 of the error amplifier 102 is connected to the output terminal 122. Since the Nch transistor 702 is in an ON state, the output terminals 122 and the sources of the Nch transistors 701 and 702 are electrically connected. Then, when the Nch transistors 802 and 803 are in the OFF state, the current path of the constant current circuit 705 is blocked, and current can be prevented from flowing from the output terminal 122 through the Nch transistor 702 to the VSS terminal 123.
並且,在圖13是作為1段放大電路的錯誤放大器的例子來進行說明,但即使錯誤放大器電路是2段以上的多段放大電路也無妨。該情況,只要像圖13那樣在錯誤放大器的輸出與VDD側插入具有用以遮斷電流通路的機能之Pch電晶體801,在錯誤放大器的輸出與VSS側插入具有用以遮斷電流通路的機能之Nch電晶體802及Pch電晶體803即可。In addition, although FIG. 13 is an example of an error amplifier which is a one-stage amplifier circuit, the error amplifier circuit may be a multi-stage amplifier circuit of two or more stages. In this case, as shown in Fig. 13, a Pch transistor 801 having a function for blocking the current path is inserted in the output of the error amplifier and the VDD side, and the output of the error amplifier and the VSS side are inserted to block the current path. The Nch transistor 802 and the Pch transistor 803 of the function can be used.
圖14是表示圖1之本發明的電壓調整器的錯誤放大器電路102的第四實施例。與圖13的不同是刪除Nch電晶體802、803,連接CONT端子823與定電流電路705的點。Fig. 14 is a view showing a fourth embodiment of the error amplifier circuit 102 of the voltage regulator of the present invention shown in Fig. 1. The difference from FIG. 13 is that the Nch transistors 802 and 803 are deleted, and the CONT terminal 823 and the constant current circuit 705 are connected.
其次針對動作來進行說明。當輸出端子122的電位比VDD端子121的電位更高時,Pch電晶體104為ON狀態,Pch電晶體801會關閉,錯誤放大器102的輸出723是被連接至輸出端子122。由於Nch電晶體702是ON狀態,所以輸出端子122與Nch電晶體701、702的源極會成為被電性連接的狀態。而且,依據CONT端子823的信號,定電流電路705是被關閉,遮斷電流通路,可防止電流從輸出端子122通過Nch電晶體702流至VSS端子123。Next, the action will be described. When the potential of the output terminal 122 is higher than the potential of the VDD terminal 121, the Pch transistor 104 is in an ON state, the Pch transistor 801 is turned off, and the output 723 of the error amplifier 102 is connected to the output terminal 122. Since the Nch transistor 702 is in an ON state, the output terminals 122 and the sources of the Nch transistors 701 and 702 are electrically connected. Further, according to the signal of the CONT terminal 823, the constant current circuit 705 is turned off to interrupt the current path, and current can be prevented from flowing from the output terminal 122 through the Nch transistor 702 to the VSS terminal 123.
並且,在圖14是作為1段放大電路的錯誤放大器的例子來進行說明,但即使錯誤放大器電路是2段以上的多段放大電路也無妨。該情況,只要形成依據CONT端子823的信號來關閉定電流電路的構成即可。In addition, FIG. 14 is an example of an error amplifier which is a one-stage amplifier circuit, but the error amplifier circuit may be a multi-stage amplifier circuit of two or more stages. In this case, the configuration in which the constant current circuit is turned off in accordance with the signal of the CONT terminal 823 may be formed.
101...Vref電路101. . . Vref circuit
102...錯誤放大器102. . . Error amplifier
112...備份電池112. . . Backup battery
113...負荷113. . . load
121...VDD端子121. . . VDD terminal
122...輸出端子122. . . Output terminal
123...VSS端子123. . . VSS terminal
130...比較電路130. . . Comparison circuit
203...定電流電路203. . . Constant current circuit
204...定電流電路204. . . Constant current circuit
207...位準移位器207. . . Level shifter
222...CONTX端子222. . . CONTX terminal
223...CONT端子223. . . CONT terminal
303...定電流電路303. . . Constant current circuit
304...定電流電路304. . . Constant current circuit
705...定電流電路705. . . Constant current circuit
721...+輸入端子721. . . +input terminal
722...-輸入端子722. . . -Input terminal
723...EOUT端子723. . . EOUT terminal
823...CONT端子823. . . CONT terminal
1105...比較器1105. . . Comparators
圖1是本發明的第一實施例的電壓調整器的電路圖。Fig. 1 is a circuit diagram of a voltage regulator of a first embodiment of the present invention.
圖2是表示本發明的電壓調整器的第一實施例的比較電路的電路圖。Fig. 2 is a circuit diagram showing a comparison circuit of the first embodiment of the voltage regulator of the present invention.
圖3是表示本發明的電壓調整器的第二實施例的比較電路的電路圖。Fig. 3 is a circuit diagram showing a comparison circuit of a second embodiment of the voltage regulator of the present invention.
圖4是本發明的電壓調整器的第二實施例的比較電路的各部電壓波形。Fig. 4 is a view showing voltage waveforms of respective portions of a comparison circuit of a second embodiment of the voltage regulator of the present invention.
圖5是表示本發明的電壓調整器的第三實施例的比較電路的電路圖。Fig. 5 is a circuit diagram showing a comparison circuit of a third embodiment of the voltage regulator of the present invention.
圖6是本發明的電壓調整器的第三實施例的比較電路的各部電壓波形。Fig. 6 is a view showing voltage waveforms of respective portions of a comparison circuit of a third embodiment of the voltage regulator of the present invention.
圖7是一般的電壓調整器的錯誤放大器的電路圖。Fig. 7 is a circuit diagram of an error amplifier of a general voltage regulator.
圖8是P通道型MOS電晶體的剖面圖。Fig. 8 is a cross-sectional view showing a P-channel type MOS transistor.
圖9是本發明的電壓調整器的第二實施例的錯誤放大器的電路圖。Figure 9 is a circuit diagram of an error amplifier of a second embodiment of the voltage regulator of the present invention.
圖10是P通道型MOS電晶體的剖面圖。Fig. 10 is a cross-sectional view showing a P-channel type MOS transistor.
圖11是表示以往的電壓調整器的電路圖。Fig. 11 is a circuit diagram showing a conventional voltage regulator.
圖12是本發明的第二實施例的電壓調整器的電路圖。Figure 12 is a circuit diagram of a voltage regulator of a second embodiment of the present invention.
圖13是本發明的電壓調整器的第三實施例的錯誤放大器電路圖。Figure 13 is a circuit diagram of an error amplifier of a third embodiment of the voltage regulator of the present invention.
圖14是本發明的電壓調整器的第四實施例的錯誤放大器電路圖。Figure 14 is a circuit diagram of an error amplifier of a fourth embodiment of the voltage regulator of the present invention.
101...Vref電路101. . . Vref circuit
102...錯誤放大器102. . . Error amplifier
103、104、105、106...Pch電晶體103, 104, 105, 106. . . Pch transistor
107、108...電阻107, 108. . . resistance
109...Nch電晶體109. . . Nch transistor
110、111...節點110, 111. . . node
112...備份電池112. . . Backup battery
113...負荷113. . . load
121...VDD端子121. . . VDD terminal
122...輸出端子122. . . Output terminal
123...VSS端子123. . . VSS terminal
130...比較電路130. . . Comparison circuit
R1、R2...電阻值R1, R2. . . resistance
Claims (10)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/559,966 US8198875B2 (en) | 2009-09-15 | 2009-09-15 | Voltage regulator |
| JP2010167460A JP5511569B2 (en) | 2009-09-15 | 2010-07-26 | Voltage regulator |
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| TW201124810A TW201124810A (en) | 2011-07-16 |
| TWI495975B true TWI495975B (en) | 2015-08-11 |
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| TW099130880A TWI495975B (en) | 2009-09-15 | 2010-09-13 | Voltage regulator |
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| US (1) | US8198875B2 (en) |
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| CN101727120B (en) * | 2009-11-26 | 2011-09-07 | 四川和芯微电子股份有限公司 | Linear voltage regulator circuit for rapidly responding to load change without plug-in capacitor |
| JP2012203528A (en) * | 2011-03-24 | 2012-10-22 | Seiko Instruments Inc | Voltage regulator |
| JP5969221B2 (en) * | 2012-02-29 | 2016-08-17 | エスアイアイ・セミコンダクタ株式会社 | Voltage regulator |
| JP5937436B2 (en) * | 2012-06-28 | 2016-06-22 | アルプス電気株式会社 | Protection circuit |
| US9588530B2 (en) | 2012-07-06 | 2017-03-07 | Nxp Usa, Inc. | Voltage regulator circuit and method therefor |
| JP6135768B2 (en) * | 2013-09-26 | 2017-05-31 | 富士通株式会社 | Step-down power supply circuit, power supply module, and step-down power supply circuit control method |
| JP6993243B2 (en) * | 2018-01-15 | 2022-01-13 | エイブリック株式会社 | Backflow prevention circuit and power supply circuit |
| JP7173915B2 (en) * | 2019-03-28 | 2022-11-16 | ラピスセミコンダクタ株式会社 | power circuit |
| JP6647690B1 (en) * | 2019-10-26 | 2020-02-14 | トレックス・セミコンダクター株式会社 | Comparator and charge control IC having the same |
| CN111682869B (en) * | 2020-07-03 | 2024-02-09 | 上海艾为电子技术股份有限公司 | Anti-backflow current load switch and electronic equipment |
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| US5187396A (en) * | 1991-05-22 | 1993-02-16 | Benchmarq Microelectronics, Inc. | Differential comparator powered from signal input terminals for use in power switching applications |
| TW316306B (en) * | 1993-07-21 | 1997-09-21 | Seiko Epson Corp | |
| TW432675B (en) * | 1997-03-31 | 2001-05-01 | Hitachi Ltd | Semiconductor integrated circuit apparatus |
| TW478239B (en) * | 1999-06-29 | 2002-03-01 | Toshiba Corp | Power supply unit |
| TW200525328A (en) * | 2003-12-26 | 2005-08-01 | Rohm Co Ltd | Signal output circuit and a power source voltage monitoring device |
| US20080012543A1 (en) * | 2006-07-13 | 2008-01-17 | Takaaki Negoro | Voltage regulator |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3560512B2 (en) | 1999-08-06 | 2004-09-02 | 株式会社リコー | Power supply circuit and constant voltage circuit used therefor |
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2009
- 2009-09-15 US US12/559,966 patent/US8198875B2/en not_active Expired - Fee Related
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Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5187396A (en) * | 1991-05-22 | 1993-02-16 | Benchmarq Microelectronics, Inc. | Differential comparator powered from signal input terminals for use in power switching applications |
| TW316306B (en) * | 1993-07-21 | 1997-09-21 | Seiko Epson Corp | |
| TW432675B (en) * | 1997-03-31 | 2001-05-01 | Hitachi Ltd | Semiconductor integrated circuit apparatus |
| TW478239B (en) * | 1999-06-29 | 2002-03-01 | Toshiba Corp | Power supply unit |
| TW200525328A (en) * | 2003-12-26 | 2005-08-01 | Rohm Co Ltd | Signal output circuit and a power source voltage monitoring device |
| US20080012543A1 (en) * | 2006-07-13 | 2008-01-17 | Takaaki Negoro | Voltage regulator |
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| US8198875B2 (en) | 2012-06-12 |
| JP5511569B2 (en) | 2014-06-04 |
| US20110062921A1 (en) | 2011-03-17 |
| JP2011065634A (en) | 2011-03-31 |
| TW201124810A (en) | 2011-07-16 |
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