TWI495003B - - Google Patents
Info
- Publication number
- TWI495003B TWI495003B TW101129366A TW101129366A TWI495003B TW I495003 B TWI495003 B TW I495003B TW 101129366 A TW101129366 A TW 101129366A TW 101129366 A TW101129366 A TW 101129366A TW I495003 B TWI495003 B TW I495003B
- Authority
- TW
- Taiwan
Links
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110259602.5A CN102983051B (zh) | 2011-09-05 | 2011-09-05 | 可调节等离子体浓度分布的等离子处理装置及其处理方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201316402A TW201316402A (zh) | 2013-04-16 |
| TWI495003B true TWI495003B (zh) | 2015-08-01 |
Family
ID=47856943
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101129366A TW201316402A (zh) | 2011-09-05 | 2012-08-14 | 可調節等離子體濃度分佈的等離子處理裝置及其處理方法 |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN102983051B (zh) |
| TW (1) | TW201316402A (zh) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103227091B (zh) * | 2013-04-19 | 2016-01-27 | 中微半导体设备(上海)有限公司 | 等离子体处理装置 |
| CN108521707B (zh) * | 2018-04-19 | 2020-05-26 | 哈尔滨工业大学 | 等离子体密度的两级调控方法及系统 |
| CN113133175B (zh) * | 2019-12-31 | 2024-02-09 | 中微半导体设备(上海)股份有限公司 | 等离子体电感线圈结构、等离子体处理设备以及处理方法 |
| WO2024250258A1 (zh) * | 2023-06-09 | 2024-12-12 | 理想万里晖半导体设备(上海)股份有限公司 | 硅膜层沉积方法以及用于制造异质结太阳能电池的方法 |
| CN118398468B (zh) * | 2024-06-26 | 2024-08-30 | 深圳市恒运昌真空技术股份有限公司 | 等离子体处理设备的控制方法、控制装置及处理设备 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6312556B1 (en) * | 1998-07-22 | 2001-11-06 | Micron Technology, Inc. | Beat frequency modulation for plasma generation |
| TW200608840A (en) * | 2004-05-28 | 2006-03-01 | Lam Res Corp | Plasma processor with electrode responsive to multiple RF frequencies |
| CN201263183Y (zh) * | 2008-06-27 | 2009-06-24 | 丹阳市新桥镇旭阳电器厂 | 一体化多路射频调制器 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7405521B2 (en) * | 2003-08-22 | 2008-07-29 | Lam Research Corporation | Multiple frequency plasma processor method and apparatus |
| CN100552883C (zh) * | 2005-05-09 | 2009-10-21 | 应用材料股份有限公司 | 使用双频率射频源的等离子体产生与控制 |
| US8076247B2 (en) * | 2007-01-30 | 2011-12-13 | Applied Materials, Inc. | Plasma process uniformity across a wafer by controlling RF phase between opposing electrodes |
| CN101287327B (zh) * | 2007-04-13 | 2011-07-20 | 中微半导体设备(上海)有限公司 | 射频功率源系统及使用该射频功率源系统的等离子体反应腔室 |
-
2011
- 2011-09-05 CN CN201110259602.5A patent/CN102983051B/zh active Active
-
2012
- 2012-08-14 TW TW101129366A patent/TW201316402A/zh unknown
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6312556B1 (en) * | 1998-07-22 | 2001-11-06 | Micron Technology, Inc. | Beat frequency modulation for plasma generation |
| TW200608840A (en) * | 2004-05-28 | 2006-03-01 | Lam Res Corp | Plasma processor with electrode responsive to multiple RF frequencies |
| CN201263183Y (zh) * | 2008-06-27 | 2009-06-24 | 丹阳市新桥镇旭阳电器厂 | 一体化多路射频调制器 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102983051B (zh) | 2015-06-24 |
| CN102983051A (zh) | 2013-03-20 |
| TW201316402A (zh) | 2013-04-16 |